TWI845230B - Pixel circuit and display panel using the same - Google Patents
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本發明是有關於一種畫素電路及應用其之顯示面板,且特別是有關於一種微發光二極體(Micro LED,μLED)畫素電路及應用其之顯示面板。 The present invention relates to a pixel circuit and a display panel using the same, and in particular to a micro-light-emitting diode (Micro LED, μLED) pixel circuit and a display panel using the same.
微發光二極體(Micro LED)可以自主發光,不須背光,省電,在戶外有陽光的環境下,仍能可以清楚辨識。此外,Micro LED更具有高效率、高亮度、高可靠度及反應時間快等特點,更具節能、機構簡易、體積小、薄型等優勢。因此已逐漸成為穿戴裝置最佳的顯示螢幕。 Micro LED can emit light autonomously, does not require backlight, and saves power. It can still be clearly identified in an outdoor sunlight environment. In addition, Micro LED has the characteristics of high efficiency, high brightness, high reliability, and fast response time. It is more energy-saving, simple in structure, small in size, and thin. Therefore, it has gradually become the best display screen for wearable devices.
以目前的微發光二極體畫素電路而言,其補償效果較差,且畫素電路所需的電路面積也較大,這是待改善的地方。 As for the current micro-luminescent diode pixel circuit, its compensation effect is poor, and the circuit surface area required for the pixel circuit is also large, which is an area that needs to be improved.
根據本案一方面,提出一種微發光二極體(Micro LED,μLED)畫素電路包括:一發光電路,用於進行發光;一第一電壓讀取電路,耦接至該發光電路,該第一電壓讀取電路讀取一臨界電壓;一重設電路,耦接至該發光電路,用於重設一第二 節點的一電壓;一資料讀取電路,耦接至該發光電路,將一資料信號寫入至該微發光二極體畫素電路內;以及一第二電壓讀取電路,耦接至該發光電路,該第二電壓讀取電路將一第二參考電壓寫入至該第三節點。 According to one aspect of the present invention, a micro-LED (Micro LED, μLED) pixel circuit is proposed, comprising: a light-emitting circuit for emitting light; a first voltage reading circuit coupled to the light-emitting circuit, the first voltage reading circuit reading a critical voltage; a reset circuit coupled to the light-emitting circuit for resetting a voltage of a second node; a data reading circuit coupled to the light-emitting circuit for writing a data signal into the micro-LED pixel circuit; and a second voltage reading circuit coupled to the light-emitting circuit, the second voltage reading circuit writing a second reference voltage to the third node.
根據本案另一方面,提出一種微發光二極體(Micro LED,μLED)顯示面板,包括:複數個微發光二極體畫素電路。各該些微發光二極體畫素電路包括:一發光電路,用於進行發光;一第一電壓讀取電路,耦接至該發光電路,該第一電壓讀取電路讀取一臨界電壓;一重設電路,耦接至該發光電路,用於重設一第二節點的一電壓;一資料讀取電路,耦接至該發光電路,將一資料信號寫入至該微發光二極體畫素電路內;以及一第二電壓讀取電路,耦接至該發光電路,該第二電壓讀取電路將一第二參考電壓寫入至該第三節點。 According to another aspect of the present invention, a micro-LED (Micro LED, μLED) display panel is proposed, comprising: a plurality of micro-LED pixel circuits. Each of the micro-luminescent diode pixel circuits includes: a light-emitting circuit for emitting light; a first voltage reading circuit coupled to the light-emitting circuit, the first voltage reading circuit reading a critical voltage; a reset circuit coupled to the light-emitting circuit for resetting a voltage of a second node; a data reading circuit coupled to the light-emitting circuit for writing a data signal into the micro-luminescent diode pixel circuit; and a second voltage reading circuit coupled to the light-emitting circuit, the second voltage reading circuit writing a second reference voltage to the third node.
為了對本發明之上述及其他方面有更佳的瞭解,下文特舉實施例,並配合所附圖式詳細說明如下: In order to better understand the above and other aspects of the present invention, the following is a specific example and a detailed description with the attached drawings as follows:
100、500、600、710:微發光二極體畫素電路 100, 500, 600, 710: Micro-luminescent diode pixel circuit
110、510、610:發光電路 110, 510, 610: light-emitting circuit
120、520、620:第一電壓讀取電路 120, 520, 620: First voltage reading circuit
130、530、630:重設電路 130, 530, 630: Reset circuit
140、540、640:資料讀取電路 140, 540, 640: Data reading circuit
150、550、650:第二電壓讀取電路 150, 550, 650: Second voltage reading circuit
T1~T9:電晶體 T1~T9: Transistor
C1:電容 C1: Capacitor
N1~N3:節點 N1~N3: Node
EM(n)、SN(n)、SN(n-1)、SN(n+1)、VC(n):控制信號 EM(n), SN(n), SN(n-1), SN(n+1), VC(n): control signal
Data:資料信號 Data: data signal
Vss:接地 Vss: Ground
Vdd:操作電壓 Vdd: operating voltage
Vref1、Vref2:參考電壓 Vref1, Vref2: reference voltage
P1~P3:階段 P1~P3: Stage
700:微發光二極體顯示面板 700: Micro-luminescent diode display panel
第1圖繪示依照本發明一實施例的微發光二極體畫素電路。 Figure 1 shows a micro-luminescent diode pixel circuit according to an embodiment of the present invention.
第2圖繪示依照本發明一實施例的微發光二極體畫素電路的信號波形圖。 Figure 2 shows a signal waveform diagram of a micro-luminescent diode pixel circuit according to an embodiment of the present invention.
第3A圖至第3C圖分例顯示在本案一實施例中之微發光二極體畫素電路100之重設階段P1,電壓讀取與資料寫入階段
P2,以及,發光階段P3之操作示意圖。
Figures 3A to 3C respectively show the operation schematic diagrams of the reset phase P1, the voltage reading and data writing phase P2, and the luminescence phase P3 of the micro-luminescent
第4A圖顯示習知技術的微發光二極體畫素電路的電壓電流曲線圖,而第4B圖顯示根據本案一實施例的微發光二極體畫素電路的電壓電流曲線圖。 FIG. 4A shows a voltage-current curve diagram of a micro-luminescent diode pixel circuit of the prior art, and FIG. 4B shows a voltage-current curve diagram of a micro-luminescent diode pixel circuit according to an embodiment of the present invention.
第5A圖繪示依照本發明一實施例的微發光二極體畫素電路。第5B圖繪示依照本發明一實施例的微發光二極體畫素電路的信號波形圖。 FIG. 5A shows a micro-luminescent diode pixel circuit according to an embodiment of the present invention. FIG. 5B shows a signal waveform diagram of a micro-luminescent diode pixel circuit according to an embodiment of the present invention.
第6A圖繪示依照本發明一實施例的微發光二極體畫素電路。第6B圖繪示依照本發明一實施例的微發光二極體畫素電路的信號波形圖。 FIG. 6A shows a micro-luminescent diode pixel circuit according to an embodiment of the present invention. FIG. 6B shows a signal waveform diagram of a micro-luminescent diode pixel circuit according to an embodiment of the present invention.
第7圖顯示根據本案一實施例的微發光二極體顯示面板的示意圖。 Figure 7 shows a schematic diagram of a micro-luminescent diode display panel according to an embodiment of the present invention.
本說明書的技術用語係參照本技術領域之習慣用語,如本說明書對部分用語有加以說明或定義,該部分用語之解釋係以本說明書之說明或定義為準。本揭露之各個實施例分別具有一或多個技術特徵。在可能實施的前提下,本技術領域具有通常知識者可選擇性地實施任一實施例中部分或全部的技術特徵,或者選擇性地將這些實施例中部分或全部的技術特徵加以組合。 The technical terms in this specification refer to the customary terms in this technical field. If this specification explains or defines some terms, the interpretation of these terms shall be based on the explanation or definition in this specification. Each embodiment disclosed in this disclosure has one or more technical features. Under the premise of possible implementation, a person with ordinary knowledge in this technical field can selectively implement some or all of the technical features in any embodiment, or selectively combine some or all of the technical features in these embodiments.
第1圖繪示依照本發明一實施例的微發光二極體畫素電路。第2圖繪示依照本發明一實施例的微發光二極體畫素電路的信號波形圖。微發光二極體畫素電路100包括:發光電路110、
第一電壓讀取電路120、重設電路130、資料讀取電路140與第二電壓讀取電路150。在本案說明書中,第一電壓讀取電路120與第二電壓讀取電路150乃是用於進行電壓補償。
FIG. 1 shows a micro-luminescent diode pixel circuit according to an embodiment of the present invention. FIG. 2 shows a signal waveform diagram of a micro-luminescent diode pixel circuit according to an embodiment of the present invention. The micro-luminescent
發光電路110用於進行發光。發光電路110包括:第一電晶體T1、第二電晶體T2、第四電晶體T4與微發光二極體111。第一電晶體T1包括:一第一端耦接至操作電壓Vdd,一第二端耦接至一第一節點N1,以及,一控制端接收發光控制信號EM(n),n為正整數,n代表此微發光二極體畫素電路100位於顯示面板(顯示於後面)的第n列,舉例來說,如果顯示面板的閘級掃描線有270條,則n=1~270。第二電晶體T2包括:一第一端耦接至第一節點N1,一第二端耦接至第四電晶體T4的第一端,以及一控制端耦接至第二節點N2。第四電晶體T4包括:一第一端耦接至第二電晶體的第二端,一第二端耦接至微發光二極體111的第一端,以及一控制端接收發光控制信號EM(n)。微發光二極體111包括一第一端耦接至第四電晶體T4的第二端,以及,一第二端耦接至接地Vss。
The light-emitting
第一電壓讀取電路120耦接至發光電路110。第一電壓讀取電路120包括:第三電晶體T3。第三電晶體T3包括:一第一端耦接至第二電晶體的第二端,一第二端耦接至第二節點N2,以及一控制端接收第n級串列控制信號(或稱為掃描信號(scan signal))SN(n)。第一電壓讀取電路120讀取第二電晶體T2的臨界電壓。
The first
重設電路130耦接至發光電路110。重設電路130包括:第五電晶體T5。第五電晶體T5包括:一第一端耦接至第二節點N2,一第二端耦接至一第一參考電壓Vref1,以及一控制端接收第n-1級串列控制信號SN(n-1)。重設電路130用於重設第二節點N2的一電壓。
The
資料讀取電路140耦接至發光電路110。資料讀取電路140包括:第六電晶體T6。第六電晶體T6包括:一第一端耦接至第一節點N1,一第二端接收資料信號Data,以及一控制端接收第n級串列控制信號SN(n)。資料讀取電路140將資料信號Data寫入至該微發光二極體畫素電路100內。
The data read
第二電壓讀取電路150耦接至發光電路110。第二電壓讀取電路150包括:第七電晶體T7、第八電晶體T8與電容C1。第七電晶體T7包括:一第一端耦接至第一節點N1,一第二端耦接至第三節點N3,以及一控制端接收發光控制信號EM(n)。第八電晶體T8包括:一第一端耦接至一第二參考電壓Vref2,一第二端耦接至第三節點N3,以及一控制端接收補償控制信號(亦可稱為電壓補償信號)VC(n)。電容C1包括一第一端耦接至第三節點N3,以及,一第二端耦接至第二節點N2。第二電壓讀取電路150將第二參考電壓Vref2寫入至第三節點N3。
The second
如第2圖所示,在本案一實施例中,微發光二極體畫素電路100具有三個操作階段:重設階段P1,補償與資料寫入階段P2,以及,發光階段P3。底下將分別說明這三個階段。
As shown in FIG. 2, in an embodiment of the present invention, the micro-luminescent
第3A圖至第3C圖分例顯示在本案一實施例中之微發光二極體畫素電路100之重設階段P1,電壓讀取與資料寫入階段P2,以及,發光階段P3之操作示意圖。
Figures 3A to 3C respectively show the operation schematic diagrams of the reset phase P1, the voltage reading and data writing phase P2, and the light-emitting phase P3 of the micro-luminescent
如第3A圖所示,於重設階段P1,補償控制信號VC(n)與第n-1級串列控制信號SN(n-1)為邏輯低,使得第八電晶體T8與第五電晶體T5為導通,將第二節點N2的電壓拉至第一參考電壓Vref1且將第三節點N3的電壓拉至第二參考電壓Vref2。此外,於重設階段P1,預先開啟第二電晶體T2,以為下一個階段P2做準備。 As shown in Figure 3A, in the reset phase P1, the compensation control signal VC(n) and the n-1th stage serial control signal SN(n-1) are logically low, so that the eighth transistor T8 and the fifth transistor T5 are turned on, pulling the voltage of the second node N2 to the first reference voltage Vref1 and the voltage of the third node N3 to the second reference voltage Vref2. In addition, in the reset phase P1, the second transistor T2 is turned on in advance to prepare for the next phase P2.
如第3B圖所示,於電壓讀取與資料寫入階段P2內,補償控制信號VC(n)與第n級串列控制信號SN(n)為邏輯低,使得第八電晶體T8、第二電晶體T2、第三電晶體T3與第六電晶體T6為導通。由於第六電晶體T6為導通,將資料信號Data寫入至第一節點N1。由於第八電晶體T8為導通,將第三節點N3的電壓拉至第二參考電壓Vref2。此外,資料信號Data可透過第六電晶體T6、第二電晶體T2與第三電晶體T3而寫入至第二節點N2,但第二節點N2的電壓被箝制在N2=Data-|VTH|,其中,VTH代表第二電晶體T2的臨界電壓。亦即,在電壓讀取與資料寫入階段P2內,讓第二電晶體T2的閘極電壓(亦即第二節點N2的電壓)箝制(補償)在N2=Data-|VTH|,此外,讓資料信號Data寫入至畫素電路100內。亦可稱為在電壓讀取與資料寫入階段P2內,第一電壓讀取電路120讀取第二電晶體T2的臨界電壓VTH,以
及,資料讀取電路140將資料信號Data寫入至該微發光二極體畫素電路100內。
As shown in FIG. 3B , in the voltage reading and data writing phase P2, the compensation control signal VC(n) and the n-th stage serial control signal SN(n) are logically low, so that the eighth transistor T8, the second transistor T2, the third transistor T3 and the sixth transistor T6 are turned on. Since the sixth transistor T6 is turned on, the data signal Data is written to the first node N1. Since the eighth transistor T8 is turned on, the voltage of the third node N3 is pulled to the second reference voltage Vref2. In addition, the data signal Data can be written into the second node N2 through the sixth transistor T6, the second transistor T2, and the third transistor T3, but the voltage of the second node N2 is clamped at N2=Data-|VTH|, where VTH represents the critical voltage of the second transistor T2. That is, in the voltage reading and data writing phase P2, the gate voltage of the second transistor T2 (that is, the voltage of the second node N2) is clamped (compensated) at N2=Data-|VTH|, and the data signal Data is written into the
如第3C圖所示,於發光階段P3內,發光控制信號EM(n)為邏輯低,使得第一電晶體T1、第二電晶體T2、第四電晶體T4與第七電晶體T7為導通,電流可流經微發光二極體111以使得微發光二極體111發光。 As shown in FIG. 3C , in the light-emitting stage P3 , the light-emitting control signal EM(n) is logically low, so that the first transistor T1 , the second transistor T2 , the fourth transistor T4 and the seventh transistor T7 are turned on, and the current can flow through the micro-LED 111 to make the micro-LED 111 emit light.
細言之,進入發光階段P3後,第一節點N1的電壓為操作電壓Vdd;第三節點N3的電壓由第二參考電壓Vref2變為操作電壓Vdd。所以,在第三節點N3產生電壓變化△V=Vdd-Vref2。此電壓變化△V透過電容C1而耦合至第二節點N2,使得,第二節點N2的電壓為:N2=Data-|VTH|+(Vdd-Vref2)*C1/(C1+CTFT1),其中,CTFT1代表第一電晶體T1的寄生電容。當寄生電容CTFT1的有效電容值遠小於電容C1的電容值時,理想上,可將第二節點N2的電壓視為非常接近:N2=Data-|VTH|+(Vdd-Vref2)。 In detail, after entering the light-emitting phase P3, the voltage of the first node N1 is the operating voltage Vdd; the voltage of the third node N3 changes from the second reference voltage Vref2 to the operating voltage Vdd. Therefore, a voltage change △V=Vdd-Vref2 is generated at the third node N3. This voltage change △V is coupled to the second node N2 through the capacitor C1, so that the voltage of the second node N2 is: N2=Data-|VTH|+(Vdd-Vref2)*C1/(C1+CTFT1), where CTFT1 represents the parasitic capacitance of the first transistor T1. When the effective capacitance of the parasitic capacitor CTFT1 is much smaller than the capacitance of the capacitor C1, ideally, the voltage of the second node N2 can be considered to be very close to: N2 = Data-|VTH| + (Vdd-Vref2).
由上述可知,在本案一實施例中,第二節點N2的電壓(亦即,第二電晶體T2的閘極電壓)原則上只有受到「C1/CTFT1」的影響,故而,相較於目前技術,本案一實施例的控制較佳與補償較佳。 From the above, it can be seen that in the first embodiment of the present case, the voltage of the second node N2 (that is, the gate voltage of the second transistor T2) is only affected by "C1/CTFT1" in principle. Therefore, compared with the current technology, the first embodiment of the present case has better control and compensation.
第4A圖顯示習知技術的微發光二極體畫素電路的電壓電流曲線圖,而第4B圖顯示根據本案一實施例的微發光二極體畫素電路的電壓電流曲線圖。 FIG. 4A shows a voltage-current curve diagram of a micro-luminescent diode pixel circuit of the prior art, and FIG. 4B shows a voltage-current curve diagram of a micro-luminescent diode pixel circuit according to an embodiment of the present invention.
於第4A圖與第4B圖中,「VTH+0V」、「VTH-0.5V」與「VTH+0.5V」分別代表將第二電晶體T2的臨界電壓增加0V、減少0.5V與增加0.5V;以及,「Vdd-0V」、「Vdd-0.5V」與「Vdd-1V」分別代表將操作電壓Vdd減少0V、減少0.5V與減少1V。「VTH+0V」、「VTH-0.5V」與「VTH+0.5V」乃是用於模擬當臨界電壓漂移時的情況。「Vdd-0V」、「Vdd-0.5V」與「Vdd-1V」則是用於模擬由於微LED電流所導致的電壓降,這裡的電壓降是指,在習知的微LED畫素電路中,當微LED電流流經顯示面板上的Vdd金屬走線時,會造成電壓降,使得面板上下的微LED所接收到的驅動電壓不同,造成畫面顯示均勻度不佳。 In FIG. 4A and FIG. 4B , "VTH+0V", "VTH-0.5V" and "VTH+0.5V" represent increasing the critical voltage of the second transistor T2 by 0V, decreasing by 0.5V and increasing by 0.5V, respectively; and "Vdd-0V", "Vdd-0.5V" and "Vdd-1V" represent decreasing the operating voltage Vdd by 0V, decreasing by 0.5V and decreasing by 1V, respectively. "VTH+0V", "VTH-0.5V" and "VTH+0.5V" are used to simulate the situation when the critical voltage drifts. "Vdd-0V", "Vdd-0.5V" and "Vdd-1V" are used to simulate the voltage drop caused by the micro LED current. The voltage drop here refers to the voltage drop caused when the micro LED current flows through the Vdd metal trace on the display panel in the known micro LED pixel circuit, so that the micro LEDs on the upper and lower sides of the panel receive different driving voltages, resulting in poor display uniformity.
下表1與表2列出本案一實施例與習知技術的微發光二極體電流之比較。 Tables 1 and 2 below list the comparison of the current of the micro-LED of an embodiment of the present invention and the prior art.
比較第4A圖與第4B圖可知,在本案一實施例中,由於△I變小了(由習知的4.7μ下降為2.7μ),即便是出現微LED電流所導致的電壓降,但本案一實施例的電流變化量較習知技術為佳。 Comparing Figure 4A and Figure 4B, it can be seen that in the first embodiment of the present invention, since △I becomes smaller (from the known 4.7μ to 2.7μ), even if there is a voltage drop caused by the micro LED current, the current change amount of the first embodiment of the present invention is better than the known technology.
第5A圖繪示依照本發明一實施例的微發光二極體畫素電路。第5B圖繪示依照本發明一實施例的微發光二極體畫素電路的信號波形圖。微發光二極體畫素電路500包括:發光電路510、第一電壓讀取電路520、重設電路530、資料讀取電路540與第二電壓讀取電路550。基本上,微發光二極體畫素電路500的電路架構相同於微發光二極體畫素電路100,不同之處在於,微發光二極體畫素電路100受控於第n-1級串列控制信號SN(n-1)與第n級串列控制信號SN(n),而微發光二極體畫素電路500受控於第n級串列控制信號SN(n)與第n+1級串列控制信號SN(n+1)。
FIG. 5A shows a micro-luminescent diode pixel circuit according to an embodiment of the present invention. FIG. 5B shows a signal waveform diagram of the micro-luminescent diode pixel circuit according to an embodiment of the present invention. The micro-luminescent
該發光電路510包括:一第一電晶體T1、一第二電晶體T2、一第四電晶體T4與一微發光二極體111;該第一電晶體T1包括:一第一端耦接至一操作電壓Vdd,一第二端耦接至一第一節點N1,以及,一控制端接收一發光控制信號EM(n);該第二電晶體T2包括:一第一端耦接至該第一節點N1,一第二端耦接至該第四電晶體T4的第一端,以及一控制端耦接至該第二節點N2;該第四電晶體T4包括:一第一端耦接至該第二電晶體T2的第二端,一第二端耦接至該微發光二極體111的第一端,以及一控制端
接收該發光控制信號EM(n);該微發光二極體111包括一第一端耦接至該第四電晶體T4的第二端,以及,一第二端接地。
The light-emitting
該第一電壓讀取電路520包括:一第三電晶體T3,該第三電晶體T3包括:一第一端耦接至該第二電晶體T2的該第二端,一第二端耦接至該第二節點N2,以及一控制端接收一第n+1級串列控制信號SN(n+1)。
The first
該重設電路530包括:一第五電晶體T5,該第五電晶體T5包括:一第一端耦接至該第二節點N2,一第二端耦接至一第一參考電壓Vref1,以及一控制端接收一第n級串列控制信號SN(n)。
The
該資料讀取電路540包括:一第六電晶體T6,該第六電晶體T6包括:一第一端耦接至該第一節點N1,一第二端接收該資料信號Data,以及一控制端接收該第n+1級串列控制信號SN(n+1)。
The data read
該第二電壓讀取電路550包括:一第七電晶體T7、一第八電晶體T8與一電容C1,該第七電晶體T7包括:一第一端耦接至該第一節點N1,一第二端耦接至該第三節點N3,以及一控制端接收該發光控制信號EM(n);該第八電晶體包括:一第一端耦接至該第二參考電壓Vref2,一第二端耦接至該第三節點N3,以及一控制端接收一補償控制信號VC(n);該電容包括一第一端耦接至該第三節點N3,以及,一第二端耦接至該第二節點N2。
The second
故而,微發光二極體畫素電路500之操作細節可參
考微發光二極體畫素電路100,其在此不重述。
Therefore, the operation details of the micro-luminescent
第6A圖繪示依照本發明一實施例的微發光二極體畫素電路。第6B圖繪示依照本發明一實施例的微發光二極體畫素電路的信號波形圖。微發光二極體畫素電路600包括:發光電路610、第一電壓讀取電路620、重設電路630、資料讀取電路640與第二電壓讀取電路650。基本上,微發光二極體畫素電路600的電路架構相似於微發光二極體畫素電路100,不同之處在於,微發光二極體畫素電路100需要補償控制信號VC(n)來進行重設,但是在第6A圖中,微發光二極體畫素電路600不需要補償控制信號VC(n)來進行重設。此外,第二電壓讀取電路650的第八電晶體T8的控制端接收第n-1級串列控制信號SN(n-1),而不是接收補償控制信號VC(n)。
FIG. 6A shows a micro-luminescent diode pixel circuit according to an embodiment of the present invention. FIG. 6B shows a signal waveform diagram of the micro-luminescent diode pixel circuit according to an embodiment of the present invention. The micro-luminescent
該發光電路610包括:一第一電晶體T1、一第二電晶體T2、一第四電晶體T4與一微發光二極體111;該第一電晶體T1包括:一第一端耦接至一操作電壓Vdd,一第二端耦接至一第一節點N1,以及,一控制端接收一發光控制信號EM(n)。該第二電晶體T2包括:一第一端耦接至該第一節點N1,一第二端耦接至該第四電晶體T4的第一端,以及一控制端耦接至該第二節點N2;該第四電晶體T4包括:一第一端耦接至該第二電晶體T2的第二端,一第二端耦接至該微發光二極體111的第一端,以及一控制端接收該發光控制信號EM(n);該微發光二極體111包括一第一端耦接至該第四電晶體T4的第二端,以及,一第二端接地。
The light-emitting
該第一電壓讀取電路620包括:一第三電晶體T3,該第三電晶體T3包括:一第一端耦接至該第二電晶體T2的該第二端,一第二端耦接至該第二節點N2,以及一控制端接收一第n級串列控制信號SN(n)。
The first
該重設電路630包括:一第五電晶體T5,該第五電晶體T5包括:一第一端耦接至該第二節點N2,一第二端耦接至一第一參考電壓Vref1,以及一控制端接收一第n-1級串列控制信號SN(n-1)。
The
該資料讀取電路640包括:一第六電晶體T6,該第六電晶體T6包括:一第一端耦接至該第一節點N1,一第二端接收該資料信號Data,以及一控制端接收該第n級串列控制信號SN(n)。
The data read
該第二電壓讀取電路650包括:一第七電晶體T7、一第八電晶體T8、一第九電晶體T9與一電容C1,該第七電晶體T7包括:一第一端耦接至該第一節點N1,一第二端耦接至該第三節點N3,以及一控制端接收該發光控制信號EM(n);該第八電晶體T8包括:一第一端耦接至該第二參考電壓Vref2,一第二端耦接至該第三節點N3,以及一控制端接收該第n-1級串列控制信號SN(n-1);該第九電晶體T9包括:一第一端耦接至該第二參考電壓Vref2,一第二端耦接至該第三節點N3,以及一控制端接收該第n級串列控制信號SN(n);該電容C1包括一第一端耦接至該第三節點N3,以及,一第二端耦接至該第二節點N2。
The second
相較於第1圖的微發光二極體畫素電路100,微發光二極體畫素電路600只需要三種控制信號(發光控制信號EM(n)、第n-1級串列控制信號SN(n-1)、第n級串列控制信號SN(n)),移除補償控制信號VC(n)。
Compared to the
此外,微發光二極體畫素電路600之操作細節可參考微發光二極體畫素電路100,其在此不重述。
In addition, the operation details of the micro-luminescent
第7圖顯示根據本案一實施例的微發光二極體顯示面板的示意圖。如第7圖所示,微發光二極體顯示面板700包括排成列矩陣的複數個微發光二極體畫素電路710。微發光二極體畫素電路710可以是微發光二極體畫素電路100(第1圖),或者是,微發光二極體畫素電路500(第5A圖),或者是,微發光二極體畫素電路600(第6A圖)。
FIG. 7 shows a schematic diagram of a micro-luminescent diode display panel according to an embodiment of the present invention. As shown in FIG. 7, the micro-luminescent
由上述三個實施例可知,在本案三個實施例中,臨界電壓補償效果較佳,也較能補償由於微LED電流所導致的電壓降。且由於本案三個實施例的畫素電路的電路架構可以得到簡化,故而,本案三個實施例的畫素電路所需的電路面積也較小。 From the above three embodiments, it can be seen that in the three embodiments of this case, the critical voltage compensation effect is better and the voltage drop caused by the micro LED current can be compensated better. And because the circuit structure of the pixel circuit of the three embodiments of this case can be simplified, the circuit area required by the pixel circuit of the three embodiments of this case is also smaller.
綜上所述,雖然本發明已以實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。 In summary, although the present invention has been disclosed as above by the embodiments, it is not intended to limit the present invention. Those with common knowledge in the technical field to which the present invention belongs can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be subject to the scope defined in the attached patent application.
100:微發光二極體畫素電路 100: Micro-luminescent diode pixel circuit
110:發光電路 110: Luminescent circuit
120:第一電壓讀取電路 120: First voltage reading circuit
130:重設電路 130: Reset circuit
140:資料讀取電路 140: Data reading circuit
150:第二電壓讀取電路 150: Second voltage reading circuit
T1~T8:電晶體 T1~T8: Transistor
C1:電容 C1: Capacitor
N1~N3:節點 N1~N3: Node
EM(n)、SN(n)、SN(n-1)、VC(n):控制信號 EM(n), SN(n), SN(n-1), VC(n): control signal
Data:資料信號 Data: data signal
Vss:接地 Vss: Ground
Vdd:操作電壓 Vdd: operating voltage
Vref1、Vref2:參考電壓 Vref1, Vref2: reference voltage
Claims (10)
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CN106097964A (en) * | 2016-08-22 | 2016-11-09 | 京东方科技集团股份有限公司 | Image element circuit, display floater, display device and driving method |
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US20210005143A1 (en) * | 2017-06-08 | 2021-01-07 | Boe Technology Group Co., Ltd. | Pixel circuit and driving method therefor, and display panel |
TW202238553A (en) * | 2021-03-30 | 2022-10-01 | 友達光電股份有限公司 | Pixel circuit and display panel |
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CN106097964A (en) * | 2016-08-22 | 2016-11-09 | 京东方科技集团股份有限公司 | Image element circuit, display floater, display device and driving method |
CN106409225A (en) * | 2016-12-09 | 2017-02-15 | 上海天马有机发光显示技术有限公司 | Organic light emitting pixel compensation circuit, organic light emitting display panel and driving method |
US20210005143A1 (en) * | 2017-06-08 | 2021-01-07 | Boe Technology Group Co., Ltd. | Pixel circuit and driving method therefor, and display panel |
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