US6869635B2 - Organic electroluminescence device and manufacturing method therefor - Google Patents
Organic electroluminescence device and manufacturing method therefor Download PDFInfo
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- US6869635B2 US6869635B2 US09/790,546 US79054601A US6869635B2 US 6869635 B2 US6869635 B2 US 6869635B2 US 79054601 A US79054601 A US 79054601A US 6869635 B2 US6869635 B2 US 6869635B2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80516—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/321—Inverted OLED, i.e. having cathode between substrate and anode
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
Definitions
- the present invention relates to the structure of an electroluminescent (in this specification, referred to as organic EL) device for use as a display device in an information terminal apparatus, such as a computer, a mobile phone, or a television, and also relates to a manufacturing method thereof.
- organic EL electroluminescent
- an organic EL element In order to realize power saving displays, it is believed that it is most effective to drive an organic EL element by an active element, such as a thin-film transistor (TFT).
- TFT thin-film transistor
- an organic EL element can be driven by a DC voltage, and can be driven at a low voltage without imposing a load thereon in the range of high luminous efficiency.
- the luminance In the case of simple matrix driving, which uses no active devices, the luminance must be increased by applying a high voltage during a selection period. Accordingly, a significant load is imposed on the organic EL element, and in addition, the luminance efficiency is decreased. As a result, the life thereof is naturally shortened.
- An active matrix method using a TFT or the like is a strong candidate for use in a power saving organic EL display; however, it has the shortcoming that the aperture ratio, which indicates the ratio of the light-emitting area to the display area for display, is decreased.
- the aperture ratio which indicates the ratio of the light-emitting area to the display area for display.
- luminance in each pixel must be enhanced in order to increase the display luminance.
- a driving voltage is increased, power consumption is thereby increased, and hence, a problem may arise in that the life is shortened due to the load imposed on the organic EL element.
- a transparent cathode in the structure of an organic EL element (device), can be formed in order to emit light from a side opposite to the substrate (IEEE, TRANSACTIONS ON ELECTRON DEVICES, VOL. 44, NO.8, PP 1188-1203).
- an anode 5 , a hole injection layer 4 , a light-emitting layer 3 , a cathode 2 , and a transparent auxiliary cathode 21 are sequentially formed on a substrate 1 in this order, and light is emitted from the transparent auxiliary cathode 21 side.
- the light may not be emitted from the TFT substrate side; however, the light transmittance of the cathode used in the structure described above is approximately one-half of that of the substrate, and as a result, a problem may arise in that the brightness of the display is actually reduced.
- an object of the present invention is to provide an arrangement of elements in which the aperture ratio and the light transmittance are not degraded even when a switching element is used. It is also an object of the invention to provide a manufacturing method thereof.
- an organic EL device is provided which consumes low electric power and has a long life.
- a structure is also proposed in which a decrease in contrast is prevented, which is caused by incident outside light, without decreasing the luminance.
- an organic EL device including at least a cathode, a light-emitting layer, and an anode formed on a substrate in this order.
- an organic EL device includes a plurality of pixels provided on a substrate, in which each of the plurality of pixels is in an area defined by a partition, a first electrode, a light-emitting layer, and a second electrode are formed in the area in this order, and light from the light-emitting layer is emitted outside from the second electrode side.
- a method for manufacturing an organic EL device in which at least a cathode, a light-emitting layer, and a transparent anode are formed on a substrate in this order.
- FIG. 1 is a cross-sectional view showing the structure of an organic EL device according to Embodiment 1.
- FIG. 2 is a cross-sectional view showing the structure of a related art organic EL device for comparison to Embodiment 1 of FIG. 1 .
- FIG. 3 is a cross-sectional view showing the structure of an organic EL device according to Embodiment 3.
- FIG. 4 is a cross-sectional view showing the structure of an organic EL device according to Embodiment 4.
- FIG. 5 is a cross-sectional view showing the structure of an organic EL device according to Embodiment 7.
- FIG. 6 is a cross-sectional view showing the structure of an organic EL device relating to Embodiment 7.
- FIG. 7 is a schematic view showing a plan structure of an organic EL device (display device) according to Embodiment 8.
- FIG. 8 is a cross-sectional view showing the structure of an organic EL device according to Embodiment 9.
- FIG. 9 is a cross-sectional view showing the structure of an organic EL device according to Embodiment 11.
- a first characteristic of the present invention is that in an organic EL device, at least a cathode, a light-emitting layer, and an anode are formed on a substrate in this order.
- an opaque material can be used at the substrate side.
- a semiconductor substrate such as silicon, or a metal substrate, may be used.
- an integrated circuit is formed on a silicon substrate, and an organic EL element (device) can be formed thereon.
- a hole transport layer and/or a hole injection layer are preferably formed between the light-emitting layer and a transparent anode.
- the cathode includes a laminate of at least one type of conductive material and a metal oxide or fluoride.
- the luminous efficiency can be further enhanced.
- a plurality of pixels is provided, cathodes corresponding to the plurality of pixels are formed on the substrate, pixel partitions formed of an insulating material are formed between the pixels, and auxiliary anodes including a conductive material are formed having patterns equivalent to those of the partitions at locations corresponding to the top surfaces of the partitions formed of the insulating material.
- the resistance of the transparent anode having a relatively high resistance can be decreased by using the auxiliary anode, and as a result, an organic EL device uniformly emitting light from the entire surface thereof can be realized.
- a plurality of pixels is provided, cathodes corresponding to individual pixels are formed on the substrate, pixel partitions formed of an insulating material are formed between the pixels, and at least the cathode, the light-emitting layer, the anode, and an auxiliary anode are formed in each pixel in this order.
- the auxiliary anode can be formed in a subsequent step, various materials can be used for the auxiliary anode as the effect, and advantages can be obtained relating to particular features of the material.
- a mask deposition method, an inkjet method, a printing method, or the like may be used for patterning the auxiliary anode.
- the auxiliary anode includes a light-absorbing conductive material.
- the auxiliary anode includes carbon or chromium.
- an active matrix structure containing switching elements is provided on the substrate, and a laminate structure of at least the cathode, the light-emitting layer, and the anode are formed so as to overlap at least a part of the switching element when viewed from the top side.
- an area of an aperture portion in the pixel can be designed independently from a circuit relating to the switching element, which significantly increases the aperture ratio.
- a semiconductor substrate having an integrated circuit thereon is used as the substrate.
- all electronic circuits required for the device such as electronic circuits for a portable terminal, controllers, drivers, and power circuits used for display driving, can be formed on the semiconductor substrate formed of the silicon substrate, and in addition, transistors and the like that drive the organic EL device can also be provided thereon, whereby higher performance of the device and cost reduction thereof can be simultaneously realized.
- a protective substrate having a light-absorbing layer formed at positions corresponding to areas between the pixels is disposed so that the pixels and areas of the protective substrate corresponding thereto are aligned with each other, and the protective substrate is then bonded to the pixels with a sealing resin provided therebetween.
- a method for manufacturing an organic EL device includes forming at least a cathode, a light-emitting layer, and an anode on a substrate in this order.
- a hole transport layer and/or a hole injection layer be formed on the light-emitting layer, and the anodes can be subsequently formed.
- the method for manufacturing an organic EL device as described in heading (9) further includes performing a treatment for imparting hydrophilic properties to the surface of the light-emitting layer.
- a water-soluble solution containing a hole injection material can be uniformly coated.
- an oxygen plasma irradiation method is used.
- a method for manufacturing an organic EL device includes the steps of forming at least insulating pixel partitions on a substrate, subsequently depositing a light-reflecting cathode material on the entire surface and simultaneously forming cathodes and auxiliary electrodes by separating the cathodes and the auxiliary anodes on the partitions using steps thereof, and subsequently forming at least a light-emitting layer, and anodes in the areas defined by the partitions in this order.
- a method for manufacturing an organic EL device includes the steps of, after the cathodes are formed on the substrate, coating the entire surface of the substrate with an insulating material for pixel partitions followed by calcining, forming a film formed of a material for auxiliary anodes over the entire surface, subsequently etching the film of the material for the auxiliary anodes for patterning in a photolithographic step, subsequently etching the pixel partition layer thereunder for patterning, firing the partition layer, and subsequently forming at least a light-emitting layer and an anode in this order in each area defined by the partition.
- patterning for the pixel partitions and the auxiliary anodes can be simultaneously performed.
- FIG. 1 a cross-sectional view of an organic EL device according to this embodiment is shown.
- a cathode 2 was formed on a substrate 1 .
- a light-emitting layer 3 was formed, and in addition, a hole injection layer 4 was formed.
- an anode 5 was formed, and in addition, a sealing layer (not shown in the figure) was formed.
- a metal, a semiconductor, a plastic, or the like may be used, and an opaque substrate may also be used.
- the cathode 2 used in this embodiment aluminum, magnesium, lithium, or calcium may be used, and in addition, the alloy thereof or a laminate formed of these metals (in this case, a layer having a smaller work function is disposed at the light-emitting layer side) may also be used.
- a polymeric material or a low molecular weight material may be used.
- PPV polydioctylfluorene
- polyfluorene Alq3, DPVBi, and the like may be used.
- hole injection layer/hole transport layer 4 in addition to Bytron manufactured by Bayer AG., a common material, such as low molecular material TPD, MTDATA, or copper phthalocyanine, may also be used.
- a Nesa film for the anode 5 used in this embodiment, in addition to ITO, a Nesa film, IDIXO sold by Idemitsu Kosan Co., Ltd., or the like may also be used.
- IDIXO is preferably used since satisfactory conductive characteristics can be obtained even when the film thereof is formed at room temperature.
- thermosetting epoxy resin for sealing, a thermosetting epoxy resin was used; however, an ultraviolet curable resin may also be used. In addition, it is effective to use a protective substrate together therewith.
- an opaque material can be used at the substrate side.
- a semiconductor substrate such as silicon, or a metal substrate may be used.
- an integrated circuit is formed on a silicon substrate, and an organic EL element (device) can be formed thereon.
- the cathode is formed of a laminate formed of at least one type of conductive material and a metal oxide or fluoride.
- the luminous efficiency was 0.5 lm/W.
- the light-emitting layer 3 used in this embodiment was formed of a polyfluorene material and was formed by spin coating.
- the hole injection layer 4 was formed by spin coating using Bytron manufactured by Bayer AG.
- the anode 5 was formed of IDIXO. Materials and conditions for film formation are not limited to those described above.
- FIG. 3 an example of the structure shown in FIG. 3 will be described in which a plurality of cathodes 2 corresponding to a plurality of light-emitting pixels are formed on a substrate 1 , pixel partitions 6 formed of an insulating material are formed between the light-emitting pixels, and auxiliary anodes 7 formed of a conductive material having approximately equivalent patterns to those of the pixel partitions 6 are formed thereon.
- the pixel partitions 6 were formed of a polyimide and were patterned, and subsequently, a film formed of tantalum 1,000 ⁇ thick was formed and was then patterned so as to form the same pattern as that of the pixel partition 6 .
- a film formed of lithium fluoride 20 ⁇ thick was formed on the entire surface, three types of polyfluorene materials emitting red, green, and blue light were each dissolved in isodurene, and the films thereof as the light-emitting layers 3 were formed in red, green, and blue pixels, respectively, by patterning using an inkjet method.
- films formed of Bytron manufactured by Bayer AG are examples of Bytron manufactured by Bayer AG.
- the materials used in Embodiment 1 may also be used.
- a film formation method an inkjet method, a mask deposition method, a printing method, or the like may also be used.
- an arrangement in which an opaque layer formed of Pt, Ir, Ni, Pd, Au, a laminate of ITO and Al, or the like is formed as a layer located at the position of the cathode 2 ; and a layer having a predetermined thickness formed of gold, calcium, aluminum, a laminate thereof, a layer formed by co-deposition of Mg and silver, or the like is formed as a transparent layer at the position of the anode 5 .
- the auxiliary anode 7 is used as an auxiliary layer for the cathode.
- a plurality of cathodes 2 corresponding to a plurality of light-emitting pixels are formed on the substrate, pixel partitions formed of an insulating material are formed between the light-emitting pixels, and in each pixel, at least a cathode, a light-emitting layer, a transparent anode, and an auxiliary anode 7 are formed in this order.
- FIG. 4 a cross-sectional structure of an organic EL device of this embodiment is shown.
- pixel partitions 6 were formed of a polyimide and were patterned.
- a film formed of calcium fluoride 20 ⁇ thick was formed over the entire surface, films of three types of low molecular materials emitting red, green, and blue light were formed in red, green, and blue pixels, respectively, by patterning using a mask deposition method.
- TPD and MTDATA were sequentially deposited over the entire surface.
- anodes 5 IDIXO manufactured by Idemitsu Kosan Co., Ltd. was sputtered. Subsequently, tantalum 1,000 ⁇ thick was formed by mask deposition and was then patterned.
- sealing was performed by an epoxy sealing material 8 and a protective substrate 9 .
- the materials used in Embodiment 1 may also be used.
- a film formation method an inkjet method, a printing method, or the like may also be used besides a mask deposition method.
- the layer at the position of the cathode 2 and the layer at the position of the anode 5 can also be driven as an anode and a cathode, respectively, so that the light is emitted from the light-emitting layer toward the outside via the protective substrate.
- auxiliary anode described above is formed of a light-absorbing conductive material.
- Chromium was used instead of tantalum used for the auxiliary anode 7 in Embodiment 3. As a result, since the reflectance of chromium was 60%, the reflectance of outside light was decreased, and hence, enhancement in contrast could be observed.
- a polymeric conductive material such as Bytron manufactured by Bayer AG., or polyaniline, or carbon may also be used.
- auxiliary anode described above is formed of a light-absorbing conductive material, and in particular, the auxiliary anode is formed of carbon.
- Carbon was used instead of tantalum used for the auxiliary anode 7 in Embodiment 4.
- the film formation thereof was performed by a mask deposition method. As a result, the reflectance of outside light was decreased to nearly zero, and the contrast could be significantly increased.
- a polymeric conductive material such as Bytron manufactured by Bayer AG., or polyaniline, or chromium may also be used.
- an example will be described in which an active matrix structure having switching elements is laminated on a substrate, and a pixel laminate structure formed of a cathode, a light-emitting layer, and an anode, is formed so as to overlap at least a part of the active matrix structure, in particular, at least a part of the switching element when viewed from the top side.
- a cross-sectional structure of an organic EL device of this embodiment is shown.
- the structure in the figure is formed of the structure shown in FIG. 3 as a base material and a thin-film transistor (hereinafter referred to as “TFT”) provided on the substrate as a switching element.
- TFT thin-film transistor
- An aperture delimiter 11 is provided in a layer under a pixel partition, which defines a light-emitting area for the light from the light-emitting layer.
- a cross-sectional structure of an organic EL device is shown in FIG. 6 in which an anode, a cathode, and an anode are sequentially formed on a substrate in this order, and an area at which a TFT element 10 as a switching element is disposed is located under a pixel partition so as to substantially overlap the partition when viewed from the top side.
- a light-emitting pixel structure (a laminate structure formed of a cathode 2 , a light-emitting layer 3 , and an anode 5 ) having an arrangement (additionally provided with an aperture delimiter 11 ) similar to that shown in FIG. 3 was formed.
- an organic EL device having a light-emitting pixel structure, which is shown in FIG. 6 , was formed.
- the organic EL device having the structure shown in FIG. 5 was driven so that the light was emitted to the anode 5 side, and the organic EL device having the structure shown in FIG. 6 was driven so that the light was emitted to the substrate 1 side.
- the aperture ratio was 30%
- the pixel structure provided at a side (substrate side) opposite to the side which the light is emitted to, in particular, by virtue of the switching element provided so as to overlap the light-emitting layer when viewed from the top side
- the aperture ratio which could make the light-emitting layer work, could be enhanced (the aperture ratio was 70%).
- an area of the pixel aperture can be designed independently from the switching element, such as a TFT circuit, and hence, the aperture ratio can be significantly improved.
- the layer at the position of the cathode 2 and the layer at the position of the anode 5 can also be driven as an anode and a cathode, respectively, so that the light is emitted from the light-emitting layer toward the outside via the protective substrate.
- the layer at the position of the cathode 2 and the layer at the position of the anode 5 can also be driven as an anode and a cathode, respectively, so that the light is emitted from the light-emitting layer toward the outside via the protective substrate.
- the aperture ratio can be enhanced similar to the structure shown in FIG. 5 .
- a semiconductor substrate having an integrated circuit formed thereon is used as a substrate to be used.
- an example will be described in which an electronic circuit for a mobile phone, a controller and a driver for display driving, and also a transistor for driving an organic EL device are formed on a silicon substrate, and the organic EL device is formed at a display portion.
- FIG. 7 a schematic view of the silicon substrate provided with the organic EL device of this embodiment formed thereon is shown.
- an organic EL device display portion 12 is provided on a silicon substrate 18 in which organic EL elements (a pixel structure) as shown in the embodiment described above are disposed in an XY matrix, an X driver 14 and a Y driver 13 for use in a matrix driving of the display portion are provided in the vicinity thereof, and in addition, a controller 15 , an electronic circuit 16 , and a power supply circuit 17 are provided and are connected to the power supply and switches.
- operations such as those of a mobile phone, can be realized by forming every circuit on a one piece silicon substrate and by using switches to control from the exterior of the structure.
- the mobile phone is described by way of example, and in addition, this embodiment can also be used for applications which require power saving, and reduction in weight.
- FIG. 8 a cross-sectional structure of an organic EL device of this embodiment is shown.
- a sealing material 8 is coated on the substrate provided with the anode described in Embodiment 3, and a light-absorbing layer 19 is formed so as to correspond to areas between the pixels.
- a protective substrate 9 is bonded thereto for fixing while being aligned.
- the organic EL device thus formed performs sufficiently uniform display by virtue of the effect of the auxiliary anode and can efficiently damp the reflection of outside light, whereby display can be performed having a superior contrast.
- a treatment for imparting hydrophilic properties is performed to the surface of the light-emitting layer in a method for manufacturing an organic EL device having at least a cathode, a light-emitting layer, a hole transport layer and/or a hole injection layer, and a transparent anode formed on a substrate in this order, and more particularly, in a method for manufacturing an element having the structure shown in FIG. 1 .
- a UV ozone treatment may also be used as a method for imparting hydrophilic properties to the surface of the light-emitting layer.
- a solution having a high polarity such as a solution containing a polyaniline salt, may be used.
- FIG. 9 a cross-sectional structure of an organic EL device of this embodiment is shown.
- a cathode pattern was formed by the wall of the pixel partition 6 , and a pattern of an auxiliary anode 7 was simultaneously formed.
- an example will be described in which, after cathodes formed on a substrate, and an insulating material for pixel partitions is then coated on the entire surface and is calcined, a film formed of a material for an auxiliary anode is formed over the entire surface, the auxiliary anode layer is first etched for patterning in a photolithographic step, the pixel partition layer thereunder is then etched for patterning, the pixel partition layer is fired, and subsequently, at least a light-emitting layer and a transparent anode are formed in the pixel in this order.
- an element having the structure shown in FIG. 3 is formed.
- a cathode 2 having a pattern was formed on a substrate 1 .
- a polyimide solution as a material for an insulating pixel partition 6 was coated over the entire surface of the substrate and was then calcined.
- tantalum having a film thickness of 1000 ⁇ which was to be used as an auxiliary anode 7 , was formed by sputtering.
- a resist was coated thereon and was then exposed. After development, the tantalum was etched. Subsequently, the polyimide was etched. Next, the resist was stripped away, and the polyimide was fired, whereby a structure having the pixel partitions 6 and the auxiliary anodes 7 was completed.
- the material for the pixel partition or the material for the auxiliary electrode a material which can be patterned by a photographic step may also be used.
- an element arrangement can be provided in which the aperture ratio and the light transmittance are not decreased even when active elements are used, and in addition, a manufacturing method therefor can be provided. Accordingly, an organic EL device can be provided which consumes low electric power and also has a long life. In addition, at the same time, an organic EL device can be realized having a structure which prevents a decrease in contrast due to incident outside light without decreasing the luminance.
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Abstract
Description
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Publication number | Priority date | Publication date | Assignee | Title |
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JP5076296B2 (en) * | 2005-09-15 | 2012-11-21 | セイコーエプソン株式会社 | Electro-optical device and electronic apparatus |
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US20080150421A1 (en) * | 2006-12-21 | 2008-06-26 | Canon Kabushiki Kaisha | Organic light-emitting apparatus |
JP4757186B2 (en) * | 2006-12-28 | 2011-08-24 | キヤノン株式会社 | Organic light emitting device array and organic light emitting device array package |
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JP2008170756A (en) | 2007-01-12 | 2008-07-24 | Sony Corp | Display device |
US20080309225A1 (en) * | 2007-05-18 | 2008-12-18 | Masao Shimizu | Organic electroluminescent display device |
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Citations (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN87103154A (en) | 1986-05-02 | 1987-11-25 | 住友电气工业株式会社 | Steel bars for concrete structures |
US5276380A (en) * | 1991-12-30 | 1994-01-04 | Eastman Kodak Company | Organic electroluminescent image display device |
US5281489A (en) * | 1990-03-16 | 1994-01-25 | Asashi Kasei Kogyo Kabushiki Kaisha | Electroluminescent element |
US5427858A (en) * | 1990-11-30 | 1995-06-27 | Idemitsu Kosan Company Limited | Organic electroluminescence device with a fluorine polymer layer |
JPH0854836A (en) | 1994-08-10 | 1996-02-27 | Nec Corp | Drive circuit for active matrix type current controlling light emitting element |
JPH08124679A (en) | 1994-10-25 | 1996-05-17 | Ibm Japan Ltd | Electroluminescence device |
JPH08213169A (en) | 1995-02-01 | 1996-08-20 | Fuji Electric Co Ltd | Thin film electroluminescent device |
JPH09330791A (en) | 1996-06-11 | 1997-12-22 | Seiko Precision Kk | Manufacture of organic el element |
JPH10335068A (en) | 1997-05-30 | 1998-12-18 | Idemitsu Kosan Co Ltd | Light-emitting display device |
JPH118074A (en) | 1997-06-18 | 1999-01-12 | Seizo Miyata | Organic electroluminescence device |
JPH1145780A (en) | 1997-07-25 | 1999-02-16 | Tdk Corp | Organic el element |
WO1999012396A1 (en) * | 1997-09-01 | 1999-03-11 | Seiko Epson Corporation | Electroluminescent element and method of producing the same |
JPH1174082A (en) | 1997-08-29 | 1999-03-16 | Seiko Epson Corp | Luminous display |
CN1212114A (en) | 1996-11-25 | 1999-03-24 | 精工爱普生株式会社 | Organic electroluminescent element, manufacturing method thereof, and organic electroluminescent display device |
JPH1187062A (en) | 1997-09-01 | 1999-03-30 | Seiko Epson Corp | EL device |
US5895692A (en) * | 1993-12-28 | 1999-04-20 | Casio Computer Co., Ltd. | Manufacturing of organic electroluminescent device |
JPH11224783A (en) | 1998-02-04 | 1999-08-17 | Toyota Central Res & Dev Lab Inc | Organic electroluminescence device |
US5965281A (en) * | 1997-02-04 | 1999-10-12 | Uniax Corporation | Electrically active polymer compositions and their use in efficient, low operating voltage, polymer light-emitting diodes with air-stable cathodes |
US5972419A (en) * | 1997-06-13 | 1999-10-26 | Hewlett-Packard Company | Electroluminescent display and method for making the same |
US6169163B1 (en) * | 1995-07-28 | 2001-01-02 | The Dow Chemical Company | Fluorene-containing polymers and compounds useful in the preparation thereof |
US6361886B2 (en) * | 1998-12-09 | 2002-03-26 | Eastman Kodak Company | Electroluminescent device with improved hole transport layer |
US6538374B2 (en) * | 2000-02-16 | 2003-03-25 | Idemitsu Kosan Co., Ltd. | Actively driven organic EL device and manufacturing method thereof |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US527638A (en) * | 1894-10-16 | Printer s quoin | ||
US5550066A (en) | 1994-12-14 | 1996-08-27 | Eastman Kodak Company | Method of fabricating a TFT-EL pixel |
JP3401356B2 (en) * | 1995-02-21 | 2003-04-28 | パイオニア株式会社 | Organic electroluminescent display panel and method of manufacturing the same |
US6091194A (en) * | 1995-11-22 | 2000-07-18 | Motorola, Inc. | Active matrix display |
US5776622A (en) * | 1996-07-29 | 1998-07-07 | Eastman Kodak Company | Bilayer eletron-injeting electrode for use in an electroluminescent device |
JPH1074583A (en) * | 1996-08-30 | 1998-03-17 | Sanyo Electric Co Ltd | Organic EL display and method of manufacturing organic EL display |
US5834893A (en) * | 1996-12-23 | 1998-11-10 | The Trustees Of Princeton University | High efficiency organic light emitting devices with light directing structures |
JPH10294176A (en) * | 1997-02-18 | 1998-11-04 | Tdk Corp | Manufacture of organic el element and organic el element |
JP3836946B2 (en) * | 1997-06-16 | 2006-10-25 | 出光興産株式会社 | Organic EL display device |
JP3580092B2 (en) * | 1997-08-21 | 2004-10-20 | セイコーエプソン株式会社 | Active matrix display |
JP3942715B2 (en) | 1998-01-06 | 2007-07-11 | パイオニア株式会社 | Organic EL display panel and manufacturing method thereof |
JP3543170B2 (en) * | 1998-02-24 | 2004-07-14 | カシオ計算機株式会社 | Electroluminescent device and method of manufacturing the same |
JP3900675B2 (en) * | 1998-04-23 | 2007-04-04 | カシオ計算機株式会社 | Electroluminescent device and manufacturing method thereof |
EP1096568A3 (en) * | 1999-10-28 | 2007-10-24 | Sony Corporation | Display apparatus and method for fabricating the same |
-
2001
- 2001-02-23 TW TW091121245A patent/TWI282697B/en not_active IP Right Cessation
- 2001-02-23 US US09/790,546 patent/US6869635B2/en not_active Expired - Lifetime
- 2001-02-23 TW TW090104399A patent/TWI249363B/en not_active IP Right Cessation
- 2001-02-26 DE DE60140784T patent/DE60140784D1/en not_active Expired - Lifetime
- 2001-02-26 JP JP2001562061A patent/JP4144687B2/en not_active Expired - Lifetime
- 2001-02-26 CN CNB018003117A patent/CN1242650C/en not_active Expired - Lifetime
- 2001-02-26 KR KR10-2001-7011572A patent/KR100476572B1/en active IP Right Grant
- 2001-02-26 WO PCT/JP2001/001428 patent/WO2001063975A1/en active IP Right Grant
- 2001-02-26 EP EP01906318A patent/EP1191823B1/en not_active Expired - Lifetime
-
2005
- 2005-01-11 US US11/032,198 patent/US7427832B2/en not_active Expired - Lifetime
-
2008
- 2008-06-19 US US12/213,434 patent/US7898170B2/en not_active Expired - Fee Related
Patent Citations (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN87103154A (en) | 1986-05-02 | 1987-11-25 | 住友电气工业株式会社 | Steel bars for concrete structures |
US5281489A (en) * | 1990-03-16 | 1994-01-25 | Asashi Kasei Kogyo Kabushiki Kaisha | Electroluminescent element |
US5427858A (en) * | 1990-11-30 | 1995-06-27 | Idemitsu Kosan Company Limited | Organic electroluminescence device with a fluorine polymer layer |
US5276380A (en) * | 1991-12-30 | 1994-01-04 | Eastman Kodak Company | Organic electroluminescent image display device |
US5895692A (en) * | 1993-12-28 | 1999-04-20 | Casio Computer Co., Ltd. | Manufacturing of organic electroluminescent device |
JPH0854836A (en) | 1994-08-10 | 1996-02-27 | Nec Corp | Drive circuit for active matrix type current controlling light emitting element |
JPH08124679A (en) | 1994-10-25 | 1996-05-17 | Ibm Japan Ltd | Electroluminescence device |
JPH08213169A (en) | 1995-02-01 | 1996-08-20 | Fuji Electric Co Ltd | Thin film electroluminescent device |
US6169163B1 (en) * | 1995-07-28 | 2001-01-02 | The Dow Chemical Company | Fluorene-containing polymers and compounds useful in the preparation thereof |
JPH09330791A (en) | 1996-06-11 | 1997-12-22 | Seiko Precision Kk | Manufacture of organic el element |
US20030054186A1 (en) | 1996-11-25 | 2003-03-20 | Satoru Miyashita | Method of manufacturing organic el element, organic el element, and organic el display device |
CN1212114A (en) | 1996-11-25 | 1999-03-24 | 精工爱普生株式会社 | Organic electroluminescent element, manufacturing method thereof, and organic electroluminescent display device |
US5965281A (en) * | 1997-02-04 | 1999-10-12 | Uniax Corporation | Electrically active polymer compositions and their use in efficient, low operating voltage, polymer light-emitting diodes with air-stable cathodes |
JPH10335068A (en) | 1997-05-30 | 1998-12-18 | Idemitsu Kosan Co Ltd | Light-emitting display device |
US5972419A (en) * | 1997-06-13 | 1999-10-26 | Hewlett-Packard Company | Electroluminescent display and method for making the same |
JPH118074A (en) | 1997-06-18 | 1999-01-12 | Seizo Miyata | Organic electroluminescence device |
JPH1145780A (en) | 1997-07-25 | 1999-02-16 | Tdk Corp | Organic el element |
JPH1174082A (en) | 1997-08-29 | 1999-03-16 | Seiko Epson Corp | Luminous display |
JPH1187062A (en) | 1997-09-01 | 1999-03-30 | Seiko Epson Corp | EL device |
WO1999012396A1 (en) * | 1997-09-01 | 1999-03-11 | Seiko Epson Corporation | Electroluminescent element and method of producing the same |
US6575800B1 (en) * | 1997-09-01 | 2003-06-10 | Seiko Epson Corporation | Electroluminescent element and method of producing the same |
JPH11224783A (en) | 1998-02-04 | 1999-08-17 | Toyota Central Res & Dev Lab Inc | Organic electroluminescence device |
US6361886B2 (en) * | 1998-12-09 | 2002-03-26 | Eastman Kodak Company | Electroluminescent device with improved hole transport layer |
US6538374B2 (en) * | 2000-02-16 | 2003-03-25 | Idemitsu Kosan Co., Ltd. | Actively driven organic EL device and manufacturing method thereof |
Non-Patent Citations (2)
Title |
---|
Burrows, P.E. et al., "Achieving Full-Color Organic Light-Emitting Devices for Lightweight, Flat-Panel Displays", IEEE Transactions on Electron Devices, vol. 44, No. 8, Aug. 1997, pp. 1188-1203. |
JPO machine translation of JP 11-8074.* * |
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US8044580B2 (en) | 2002-04-26 | 2011-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method of the same |
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US20090289548A1 (en) * | 2002-12-13 | 2009-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of light emitting device and manufacturing device thereof |
US20100019245A1 (en) * | 2002-12-13 | 2010-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US8237176B2 (en) | 2002-12-13 | 2012-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US8785964B2 (en) | 2002-12-26 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Panel light comprising a light-emitting device |
US20090218939A1 (en) * | 2002-12-26 | 2009-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US7554128B2 (en) | 2002-12-27 | 2009-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting apparatus |
US8492968B2 (en) | 2003-01-10 | 2013-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing light-emitting device |
US20070040492A1 (en) * | 2003-01-10 | 2007-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Method For Manufacturing Light-Emitting Device |
US7303635B2 (en) | 2003-05-12 | 2007-12-04 | Sony Corporation | Deposition mask, method for manufacturing display unit using it, and display unit |
US20110175115A1 (en) * | 2003-05-12 | 2011-07-21 | Sony Corporation | Deposition mask, method for manufacturing display unit using it, and display unit |
US9184225B1 (en) | 2003-05-12 | 2015-11-10 | Sony Corporation | Display unit |
US8598783B2 (en) | 2003-05-12 | 2013-12-03 | Sony Corporation | Deposition mask, method for manufacturing display unit using it, and display unit |
US8828477B2 (en) * | 2003-05-12 | 2014-09-09 | Sony Corporation | Deposition mask, method for manufacturing display unit using it, and display unit |
US20050001546A1 (en) * | 2003-05-12 | 2005-01-06 | Masaru Yamaguchi | Deposition mask, method for manufacturing display unit using it, and display unit |
US10522759B2 (en) | 2003-05-12 | 2019-12-31 | Sony Corporation | Method for manufacturing a display unit |
US8970105B2 (en) | 2003-05-12 | 2015-03-03 | Sony Corporation | Display unit and light emitting device |
US20080032585A1 (en) * | 2003-05-12 | 2008-02-07 | Sony Corporation | Deposition mask, method for manufacturing display unit using it, and display unit |
US8994007B2 (en) | 2003-10-03 | 2015-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element and manufacturing method thereof, and light emitting device using the light emitting element |
US20090206726A1 (en) * | 2003-10-03 | 2009-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US9070894B2 (en) | 2003-10-03 | 2015-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US7994496B2 (en) | 2003-10-03 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element and manufacturing method thereof, and light emitting device using the light emitting element |
US9564561B2 (en) | 2003-10-03 | 2017-02-07 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20080203385A1 (en) * | 2003-10-03 | 2008-08-28 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element and manufacturing method thereof, and light emitting device using the light emitting element |
US9461271B2 (en) | 2003-10-03 | 2016-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element and manufacturing method thereof, and light emitting device using the light emitting element |
US10192946B2 (en) | 2003-10-03 | 2019-01-29 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US10490618B2 (en) | 2003-10-03 | 2019-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US8138667B2 (en) | 2003-10-03 | 2012-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device having metal oxide layer and color filter |
US20070030678A1 (en) * | 2003-10-31 | 2007-02-08 | Phoseon Technology, Inc. | Series wiring of highly reliable light sources |
US7524085B2 (en) | 2003-10-31 | 2009-04-28 | Phoseon Technology, Inc. | Series wiring of highly reliable light sources |
US20050122043A1 (en) * | 2003-11-25 | 2005-06-09 | Yoshifumi Kato | Organic electroluminescent element, method of manufacturing the same and lighting unit |
US8796670B2 (en) | 2003-12-26 | 2014-08-05 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element |
US10886497B2 (en) | 2003-12-26 | 2021-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element |
US20070114527A1 (en) * | 2003-12-26 | 2007-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element |
US20110156030A1 (en) * | 2003-12-26 | 2011-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element |
US9570697B2 (en) | 2003-12-26 | 2017-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element |
US11063236B2 (en) | 2004-05-20 | 2021-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element and display device |
US9349775B2 (en) | 2004-05-20 | 2016-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element and display device |
US11683952B2 (en) | 2004-05-20 | 2023-06-20 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element and display device |
US10784465B2 (en) | 2004-05-20 | 2020-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device having white light emission |
US9614012B2 (en) | 2004-05-20 | 2017-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element and display device |
US9105855B2 (en) | 2004-05-20 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element and display device |
US20070114544A1 (en) * | 2004-09-24 | 2007-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US8008652B2 (en) | 2004-09-24 | 2011-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US8643003B2 (en) | 2004-09-24 | 2014-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US9281001B2 (en) | 2004-11-08 | 2016-03-08 | Phoseon Technology, Inc. | Methods and systems relating to light sources for use in industrial processes |
US20090233003A1 (en) * | 2004-11-08 | 2009-09-17 | Phoseon Technology, Inc. | Methods and systems relating to light sources for use in industrial processes |
US7642527B2 (en) | 2005-12-30 | 2010-01-05 | Phoseon Technology, Inc. | Multi-attribute light effects for use in curing and other applications involving photoreactions and processing |
US20070154823A1 (en) * | 2005-12-30 | 2007-07-05 | Phoseon Technology, Inc. | Multi-attribute light effects for use in curing and other applications involving photoreactions and processing |
US20080024057A1 (en) * | 2006-07-31 | 2008-01-31 | Chang Nam Kim | Organic light emitting device and method of fabricating the same |
US8053971B2 (en) * | 2006-07-31 | 2011-11-08 | Lg Display Co., Ltd. | Organic light emitting device and method of fabricating the same |
US20080088227A1 (en) * | 2006-10-17 | 2008-04-17 | Lg Electronics Inc. | Light emitting panel and light source apparatus having the same |
US20080100209A1 (en) * | 2006-10-25 | 2008-05-01 | Masato Ito | Organic Electroluminescent Display Device |
US7982392B2 (en) | 2006-10-25 | 2011-07-19 | Hitachi Displays, Ltd. | Organic electroluminescent display device |
US8253327B2 (en) | 2007-06-28 | 2012-08-28 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device |
US20090001886A1 (en) * | 2007-06-28 | 2009-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, electronic device, and method for fabricating light-emitting element |
US8941301B2 (en) | 2007-06-28 | 2015-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, electronic device, and method for fabricating light-emitting element |
US20100084969A1 (en) * | 2008-10-02 | 2010-04-08 | Jun-Ho Choi | Organic light emitting display and method of manufacturing the same |
US8586155B2 (en) | 2010-10-25 | 2013-11-19 | Au Optronics Corporation | Display device |
US10497903B2 (en) * | 2014-10-09 | 2019-12-03 | Sony Corporation | Display unit, method of manufacturing display unit, and electronic apparatus for enhancement of luminance |
US10826023B2 (en) | 2014-10-09 | 2020-11-03 | Sony Corporation | Display unit with disconnected organic layer at projected portion |
US20170288174A1 (en) * | 2014-10-09 | 2017-10-05 | Sony Corporation | Display unit, method of manufacturing display unit, and electronic apparatus |
US11563198B2 (en) | 2014-10-09 | 2023-01-24 | Sony Corporation | Display unit with organic layer disposed on metal layer and insulation layer |
US20190229293A1 (en) * | 2014-10-09 | 2019-07-25 | Sony Corporation | Display unit, method of manufacturing display unit, and electronic apparatus |
US11871611B2 (en) | 2014-10-09 | 2024-01-09 | Sony Corporation | Display unit with reflector layer and electronic apparatus |
US11881489B2 (en) | 2015-12-11 | 2024-01-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US12170291B2 (en) | 2015-12-11 | 2024-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
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US7427832B2 (en) | 2008-09-23 |
TWI282697B (en) | 2007-06-11 |
US20020033664A1 (en) | 2002-03-21 |
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TWI249363B (en) | 2006-02-11 |
DE60140784D1 (en) | 2010-01-28 |
US20080258617A1 (en) | 2008-10-23 |
JP4144687B2 (en) | 2008-09-03 |
KR20020019002A (en) | 2002-03-09 |
US7898170B2 (en) | 2011-03-01 |
CN1363201A (en) | 2002-08-07 |
US20050134171A1 (en) | 2005-06-23 |
EP1191823A4 (en) | 2006-04-05 |
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