CH356209A - Halbleiterkörper und Verfahren zu seiner Herstellung - Google Patents

Halbleiterkörper und Verfahren zu seiner Herstellung

Info

Publication number
CH356209A
CH356209A CH356209DA CH356209A CH 356209 A CH356209 A CH 356209A CH 356209D A CH356209D A CH 356209DA CH 356209 A CH356209 A CH 356209A
Authority
CH
Switzerland
Prior art keywords
manufacture
semiconductor body
semiconductor
Prior art date
Application number
Other languages
English (en)
Inventor
Sydney Blakemore John
Original Assignee
Standard Telephon & Radio Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephon & Radio Ag filed Critical Standard Telephon & Radio Ag
Publication of CH356209A publication Critical patent/CH356209A/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251Diffusion into or out of group IV semiconductors
    • H01L21/2252Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)
  • Bipolar Transistors (AREA)
CH356209D 1954-04-01 1955-04-14 Halbleiterkörper und Verfahren zu seiner Herstellung CH356209A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US420401A US2843511A (en) 1954-04-01 1954-04-01 Semi-conductor devices
GB10949/54A GB766671A (en) 1954-04-01 1954-04-14 Improvements in or relating to semi-conductor materials

Publications (1)

Publication Number Publication Date
CH356209A true CH356209A (de) 1961-08-15

Family

ID=26247883

Family Applications (2)

Application Number Title Priority Date Filing Date
CH1775855A CH363416A (de) 1954-04-01 1955-03-24 Halbleitereinrichtung und Verfahren zu deren Herstellung
CH356209D CH356209A (de) 1954-04-01 1955-04-14 Halbleiterkörper und Verfahren zu seiner Herstellung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CH1775855A CH363416A (de) 1954-04-01 1955-03-24 Halbleitereinrichtung und Verfahren zu deren Herstellung

Country Status (7)

Country Link
US (2) US2843511A (de)
AU (1) AU204456B1 (de)
BE (2) BE539649A (de)
CH (2) CH363416A (de)
DE (2) DE967322C (de)
GB (2) GB766671A (de)
NL (3) NL197918A (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1207012B (de) * 1955-12-24 1965-12-16 Telefunken Patent Halbleiterbauelement mit einer injizierenden und einer sammelnden Elektrode
US3145328A (en) * 1957-04-29 1964-08-18 Raytheon Co Methods of preventing channel formation on semiconductive bodies
US3111611A (en) * 1957-09-24 1963-11-19 Ibm Graded energy gap semiconductor devices
US3065392A (en) * 1958-02-07 1962-11-20 Rca Corp Semiconductor devices
US2956913A (en) * 1958-11-20 1960-10-18 Texas Instruments Inc Transistor and method of making same
US3132057A (en) * 1959-01-29 1964-05-05 Raytheon Co Graded energy gap semiconductive device
NL243338A (de) * 1959-09-14
DE1151605C2 (de) * 1960-08-26 1964-02-06 Telefunken Patent Halbleiterbauelement
US3094633A (en) * 1960-09-29 1963-06-18 Itt Semiconductor multiplanar rectifying junction diode
US3242392A (en) * 1961-04-06 1966-03-22 Nippon Electric Co Low rc semiconductor diode
US3341377A (en) * 1964-10-16 1967-09-12 Fairchild Camera Instr Co Surface-passivated alloy semiconductor devices and method for producing the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2524035A (en) * 1948-02-26 1950-10-03 Bell Telphone Lab Inc Three-electrode circuit element utilizing semiconductive materials
NL84057C (de) * 1948-02-26
US2589658A (en) * 1948-06-17 1952-03-18 Bell Telephone Labor Inc Semiconductor amplifier and electrode structures therefor
NL84061C (de) * 1948-06-26
BE500302A (de) * 1949-11-30
US2561411A (en) * 1950-03-08 1951-07-24 Bell Telephone Labor Inc Semiconductor signal translating device
NL167482C (nl) * 1951-05-05 Toray Industries Kunstleervlies.
US2770761A (en) * 1954-12-16 1956-11-13 Bell Telephone Labor Inc Semiconductor translators containing enclosed active junctions

Also Published As

Publication number Publication date
BE536988A (de)
USRE25952E (en) 1965-12-14
DE967322C (de) 1957-10-31
BE539649A (de)
US2843511A (en) 1958-07-15
CH363416A (de) 1962-07-31
NL197918A (de)
GB766671A (en) 1957-01-23
DE1047944B (de) 1958-12-31
NL196136A (de)
AU204456B1 (en) 1955-09-29
GB804000A (en) 1958-11-05
NL94819C (de)

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