CH377449A - Transistor - Google Patents

Transistor

Info

Publication number
CH377449A
CH377449A CH8166259A CH8166259A CH377449A CH 377449 A CH377449 A CH 377449A CH 8166259 A CH8166259 A CH 8166259A CH 8166259 A CH8166259 A CH 8166259A CH 377449 A CH377449 A CH 377449A
Authority
CH
Switzerland
Prior art keywords
transistor
Prior art date
Application number
CH8166259A
Other languages
English (en)
Inventor
Fulop Walter
Original Assignee
Standard Telephon & Radio Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB2711156A external-priority patent/GB801442A/en
Priority claimed from GB26120/58A external-priority patent/GB891934A/en
Priority claimed from GB40175/58A external-priority patent/GB907942A/en
Application filed by Standard Telephon & Radio Ag filed Critical Standard Telephon & Radio Ag
Priority claimed from GB1262761A external-priority patent/GB909377A/en
Publication of CH377449A publication Critical patent/CH377449A/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133Emitter regions of BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Die Bonding (AREA)
CH8166259A 1956-09-05 1959-12-10 Transistor CH377449A (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB2711156A GB801442A (en) 1956-09-05 1956-09-05 Improvements in or relating to semi-conductor devices
GB26120/58A GB891934A (en) 1958-08-14 1958-08-14 Improvements in or relating to semi-conductor devices
GB40175/58A GB907942A (en) 1958-12-12 1958-12-12 Improvements in or relating to transistors
GB1262761A GB909377A (en) 1961-04-07 1961-04-07 Improvements in or relating to semiconductor devices

Publications (1)

Publication Number Publication Date
CH377449A true CH377449A (de) 1964-05-15

Family

ID=27448152

Family Applications (2)

Application Number Title Priority Date Filing Date
CH357470D CH357470A (de) 1956-09-05 1957-09-05 Verfahren zur Herstellung von Halbleitervorrichtungen
CH8166259A CH377449A (de) 1956-09-05 1959-12-10 Transistor

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CH357470D CH357470A (de) 1956-09-05 1957-09-05 Verfahren zur Herstellung von Halbleitervorrichtungen

Country Status (6)

Country Link
US (2) US2939205A (de)
BE (1) BE560551A (de)
CH (2) CH357470A (de)
DE (1) DE1158179B (de)
FR (1) FR1189146A (de)
NL (1) NL276978A (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3176376A (en) * 1958-04-24 1965-04-06 Motorola Inc Method of making semiconductor device
US3095622A (en) * 1958-06-11 1963-07-02 Clevite Corp Apparatus for manufacture of alloyed semiconductor devices
US3073006A (en) * 1958-09-16 1963-01-15 Westinghouse Electric Corp Method and apparatus for the fabrication of alloyed transistors
NL249576A (de) * 1959-03-18
US3186046A (en) * 1959-06-10 1965-06-01 Clevite Corp Apparatus for the preparation of alloy contacts
CH376187A (de) * 1959-10-13 1964-03-31 Transistor Ag Verfahren zur Herstellung eines Halbleiter-Schaltelementes
US3150013A (en) * 1960-02-17 1964-09-22 Gen Motors Corp Means and method for fabricating semiconductor devices
DE1132660B (de) * 1960-07-06 1962-07-05 Intermetall Legierungsvorrichtung zum Herstellen von Halbleiteranordnungen durch gleich-zeitiges Anlegieren von Elektroden an einander gegenueberliegenden Flaechen eines Halbleiterplaettchens
DE1464669B1 (de) * 1961-03-06 1971-02-04 Itt Ind Gmbh Deutsche Halbleiterdiode mit stark spannungsabhaengiger Kapazitaet
NL278601A (de) * 1961-05-25
US3210225A (en) * 1961-08-18 1965-10-05 Texas Instruments Inc Method of making transistor
US3253098A (en) * 1963-10-24 1966-05-24 Allis Chalmers Mfg Co Mechanical actuator with permanent magnet
US3409482A (en) * 1964-12-30 1968-11-05 Sprague Electric Co Method of making a transistor with a very thin diffused base and an epitaxially grown emitter
US3538401A (en) * 1968-04-11 1970-11-03 Westinghouse Electric Corp Drift field thyristor
US3619736A (en) * 1970-06-22 1971-11-09 Mitsumi Electric Co Ltd Alloy junction transistor and a method of making the same

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE500302A (de) * 1949-11-30
GB688866A (en) * 1950-10-19 1953-03-18 Gen Electric Co Ltd Improvements in or relating to crystal rectifiers
GB697869A (en) * 1951-05-11 1953-09-30 Post Office Improvements in or relating to methods of mounting piezo-electric elements
US2758261A (en) * 1952-06-02 1956-08-07 Rca Corp Protection of semiconductor devices
US2756483A (en) * 1953-05-11 1956-07-31 Sylvania Electric Prod Junction forming crucible
US2811653A (en) * 1953-05-22 1957-10-29 Rca Corp Semiconductor devices
DE1036393B (de) * 1954-08-05 1958-08-14 Siemens Ag Verfahren zur Herstellung von zwei p-n-UEbergaengen in Halbleiterkoerpern, z. B. Flaechentransistoren
US2895058A (en) * 1954-09-23 1959-07-14 Rca Corp Semiconductor devices and systems
NL204361A (de) * 1955-04-22 1900-01-01
US2796563A (en) * 1955-06-10 1957-06-18 Bell Telephone Labor Inc Semiconductive devices
US2777101A (en) * 1955-08-01 1957-01-08 Cohen Jerrold Junction transistor
NL121810C (de) * 1955-11-04
BE555318A (de) * 1956-03-07
GB800296A (en) * 1956-11-19 1958-08-20 Texas Instruments Inc Manufacture of junction-containing silicon crystals
US2953488A (en) * 1958-12-26 1960-09-20 Shockley William P-n junction having minimum transition layer capacitance
US2937324A (en) * 1959-02-05 1960-05-17 Westinghouse Electric Corp Silicon carbide rectifier

Also Published As

Publication number Publication date
US2939205A (en) 1960-06-07
US3040219A (en) 1962-06-19
CH357470A (de) 1961-10-15
NL276978A (de)
DE1158179B (de) 1963-11-28
FR1189146A (fr) 1959-09-29
BE560551A (de)

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