CH477779A - Verzögerungseinrichtung für elektrische Signale - Google Patents

Verzögerungseinrichtung für elektrische Signale

Info

Publication number
CH477779A
CH477779A CH1909568A CH1909568A CH477779A CH 477779 A CH477779 A CH 477779A CH 1909568 A CH1909568 A CH 1909568A CH 1909568 A CH1909568 A CH 1909568A CH 477779 A CH477779 A CH 477779A
Authority
CH
Switzerland
Prior art keywords
electrical signals
delay device
delay
signals
electrical
Prior art date
Application number
CH1909568A
Other languages
English (en)
Inventor
E Drangeid Karsten
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Priority to CH1909568A priority Critical patent/CH477779A/de
Publication of CH477779A publication Critical patent/CH477779A/de
Priority to FR696938589A priority patent/FR2026617B1/fr
Priority to GB60217/69A priority patent/GB1279320A/en
Priority to DE19691962403 priority patent/DE1962403B2/de
Priority to US884527A priority patent/US3634702A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/875—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having thin-film semiconductor bodies
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/30—Time-delay networks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/873—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having multiple gate electrodes
CH1909568A 1968-12-20 1968-12-20 Verzögerungseinrichtung für elektrische Signale CH477779A (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CH1909568A CH477779A (de) 1968-12-20 1968-12-20 Verzögerungseinrichtung für elektrische Signale
FR696938589A FR2026617B1 (de) 1968-12-20 1969-11-03
GB60217/69A GB1279320A (en) 1968-12-20 1969-12-10 Solid-state delay line
DE19691962403 DE1962403B2 (de) 1968-12-20 1969-12-12 Verzoegerungseinrichtung fuer elektrische signale
US884527A US3634702A (en) 1968-12-20 1969-12-12 Solid-state delay line

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1909568A CH477779A (de) 1968-12-20 1968-12-20 Verzögerungseinrichtung für elektrische Signale

Publications (1)

Publication Number Publication Date
CH477779A true CH477779A (de) 1969-08-31

Family

ID=4437331

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1909568A CH477779A (de) 1968-12-20 1968-12-20 Verzögerungseinrichtung für elektrische Signale

Country Status (5)

Country Link
US (1) US3634702A (de)
CH (1) CH477779A (de)
DE (1) DE1962403B2 (de)
FR (1) FR2026617B1 (de)
GB (1) GB1279320A (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3700976A (en) * 1970-11-02 1972-10-24 Hughes Aircraft Co Insulated gate field effect transistor adapted for microwave applications
US3911382A (en) * 1972-07-07 1975-10-07 Licentia Gmbh Tuneable delay line
US4040168A (en) * 1975-11-24 1977-08-09 Rca Corporation Fabrication method for a dual gate field-effect transistor
US4104673A (en) * 1977-02-07 1978-08-01 Westinghouse Electric Corp. Field effect pentode transistor
FR2502422A1 (fr) * 1981-03-17 1982-09-24 Thomson Csf Demodulateur d'un signal module en frequence et systeme de television comportant un tel demodulateur
US4587541A (en) * 1983-07-28 1986-05-06 Cornell Research Foundation, Inc. Monolithic coplanar waveguide travelling wave transistor amplifier
US4647789A (en) * 1984-09-14 1987-03-03 Rca Corporation Active element microwave phase shifter
US20060009185A1 (en) * 2004-07-08 2006-01-12 Khosro Shamsaifar Method and apparatus capable of interference cancellation

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2984752A (en) * 1953-08-13 1961-05-16 Rca Corp Unipolar transistors
NL301884A (de) * 1962-12-17
US3333115A (en) * 1963-11-20 1967-07-25 Toko Inc Field-effect transistor having plural insulated-gate electrodes that vary space-charge voltage as a function of drain voltage
US3328601A (en) * 1964-04-06 1967-06-27 Northern Electric Co Distributed field effect devices
DE1266405B (de) * 1965-05-05 1968-04-18 Siemens Ag Unipolartransistor fuer hohe Frequenzen

Also Published As

Publication number Publication date
DE1962403B2 (de) 1971-09-30
FR2026617B1 (de) 1974-06-21
FR2026617A1 (de) 1970-09-18
GB1279320A (en) 1972-06-28
US3634702A (en) 1972-01-11
DE1962403A1 (de) 1970-07-16

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