CN104183740A - Organic electroluminescent device and preparation method thereof - Google Patents
Organic electroluminescent device and preparation method thereof Download PDFInfo
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- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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Abstract
Provided is an organic electroluminescent device which comprises an anode, a hole injection layer, a first hole transmission layer, a first luminescent layer, a first electron transmission layer, a charge generation layer, a second hole transmission layer, a second luminescent layer, a second electron transmission layer, an electron injection layer and a cathode which are laminated in turn. The charge generation layer comprises an n-type layer, an intermediate layer and a p-type layer. Material of the n-type layer is a fullerene derivative doped with caesium salt. Material of the intermediate layer is a metal doped with hafnium compounds. Material of the p-type layer is hole transmission material doped with bipolar metal oxide. The aforementioned organic electroluminescent device is relatively high in luminescence efficiency. The invention also provides a preparation method for the organic electroluminescent device.
Description
Technical field
The present invention relates to a kind of organic electroluminescence device and preparation method thereof.
Background technology
The principle of luminosity of organic electroluminescence device is based under the effect of extra electric field, and electronics is injected into organic lowest unocccupied molecular orbital (LUMO) from negative electrode, and hole is injected into organic highest occupied molecular orbital (HOMO) from anode.Electronics and hole meet at luminescent layer, compound, form exciton, exciton moves under electric field action, and energy is passed to luminescent material, and excitation electron is from ground state transition to excitation state, excited energy, by Radiation-induced deactivation, produces photon, discharges luminous energy.But the luminous efficiency of organic electroluminescence device is lower at present.
Summary of the invention
Based on this, be necessary to provide organic electroluminescence device that a kind of luminous efficiency is higher and preparation method thereof.
A kind of organic electroluminescence device, comprises the anode stacking gradually, hole injection layer, the first hole transmission layer, the first luminescent layer, the first electron transfer layer, charge generation layer, the second hole transmission layer, the second luminescent layer, the second electron transfer layer, electron injecting layer and negative electrode, described charge generation layer comprises N-shaped layer, intermediate layer and p-type layer, described N-shaped layer material is the fullerene derivate of doping cesium salt, intermediate layer material is the metal doped with the compound of hafnium, p-type layer material is the hole mobile material of doping bipolarity metal oxide, and wherein, described cesium salt is selected from cesium carbonate, nitrine caesium, in cesium fluoride and cesium chloride at least one, described fullerene derivate is selected from [6,6]-phenyl-C61-butyric acid acid methyl esters, [6,6]-phenyl-C71-butyric acid acid methyl esters, in football alkene and football ene derivative at least one, described cesium salt and described fullerene derivate mass ratio are 1:10～2:5, the compound of described hafnium is selected from least one in hafnium oxide and hafnium boride, described metal material is selected from silver, aluminium, in platinum and gold at least one, the compound of described hafnium is 1:20～1:5 with described metal quality ratio, described doping bipolarity metal oxide is selected from molybdenum trioxide, in tungstic acid and vanadic oxide at least one, described hole mobile material is selected from 1, 1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, 4,4', 4''-tri-(carbazole-9-yl) triphenylamine and N, N '-(1-naphthyl)-N, N '-diphenyl-4, in 4 '-benzidine at least one, the mass ratio of described bipolarity metal oxide and described hole mobile material is 1:10～3:1.
The thickness of described N-shaped layer is 20nm～60nm, and described intermediate layer thickness is 5nm～20nm, and the thickness of described p-type layer is 5nm～30nm.
The material of described the first luminescent layer and described the second luminescent layer is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans, 9,10-bis--β-naphthylene anthracene, 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, at least one in 1'-biphenyl and oxine aluminium.
The material of described the first hole transmission layer and described the second hole transmission layer is selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, 4,4', 4''-tri-(carbazole-9-yl) triphenylamine and N, N '-(1-naphthyl)-N, N '-diphenyl-4, at least one in 4 '-benzidine.
The material of described the first electron transfer layer and described the second electron transfer layer is selected from 4,7-diphenyl-1,10-phenanthroline, 1,2, at least one in 4-triazole derivative and N-aryl benzimidazole.
A preparation method for organic electroluminescence device, comprises the following steps:
Prepare hole injection layer, the first hole transmission layer, the first luminescent layer and the first electron transfer layer at anode surface successively evaporation;
Prepare charge generation layer at described the first electron transfer layer surface evaporation, described charge generation layer comprises N-shaped layer, intermediate layer and p-type layer, described N-shaped layer material is the fullerene derivate of doping cesium salt, intermediate layer material is the metal doped with the compound of hafnium, p-type layer material is the hole mobile material of doping bipolarity metal oxide, wherein, described cesium salt is selected from cesium carbonate, nitrine caesium, in cesium fluoride and cesium chloride at least one, described fullerene derivate is selected from [6, 6]-phenyl-C61-butyric acid acid methyl esters, [6, 6]-phenyl-C71-butyric acid acid methyl esters, in football alkene and football ene derivative at least one, described cesium salt and described fullerene derivate mass ratio are 1:10～2:5, the compound of described hafnium is selected from least one in hafnium oxide and hafnium boride, described metal material is selected from silver, aluminium, in platinum and gold at least one, the compound of described hafnium is 1:20～1:5 with described metal quality ratio, described doping bipolarity metal oxide is selected from molybdenum trioxide, in tungstic acid and vanadic oxide at least one, described hole mobile material is selected from 1, 1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, 4, 4', 4''-tri-(carbazole-9-yl) triphenylamine and N, N '-(1-naphthyl)-N, N '-diphenyl-4, in 4 '-benzidine at least one, the mass ratio of described bipolarity metal oxide and described hole mobile material is 1:10～3:1, evaporation is 2 × 10 at vacuum pressure
-3～5 × 10
-5under Pa, carry out, the evaporation speed of organic material is 0.1～1nm/s, and the evaporation speed of metal and metallic compound is 1～10nm/s, and
Form the second hole transmission layer, the second luminescent layer, the second electron transfer layer, electron injecting layer and negative electrode on described charge generation layer surface successively evaporation.
The material of described the first luminescent layer and described the second luminescent layer is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans, 9,10-bis--β-naphthylene anthracene, 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, at least one in 1'-biphenyl and oxine aluminium.
The material of described the first hole transmission layer and described the second hole transmission layer is selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, 4,4', 4''-tri-(carbazole-9-yl) triphenylamine and N, N '-(1-naphthyl)-N, N '-diphenyl-4, at least one in 4 '-benzidine.
The thickness of described N-shaped layer is 20nm～60nm, and described intermediate layer thickness is 5nm～20nm, and the thickness of described p-type layer is 5nm～30nm.
Before described anode surface forms hole injection layer, first antianode carries out pre-treatment, pre-treatment comprises: anode is carried out to photoetching treatment, be cut into needed size, adopt liquid detergent, deionized water, acetone, ethanol, the each Ultrasonic Cleaning 15min of isopropyl acetone, to remove the organic pollution of anode surface.
Above-mentioned organic electroluminescence device and preparation method thereof, charge generation layer is by comprising N-shaped layer, intermediate layer and p-type layer form, wherein, N-shaped doped layer is adulterated by fullerene derivate and cesium salt, fullerene is electron rich material, can improve electric transmission speed, can electron transport material after cesium salt doping in conjunction with closely, form N-shaped layer, can further improve electric transmission speed, improve electron density, intermediate layer is hafnium compound and metal composition, the compound of hafnium has the feature of broad-band gap and high-k, improve the light transmission of charge generation layer, and metal can improve conductivity, and provide a large amount of free electrons, the number of electronics is approached with hole on the order of magnitude, and p-type layer adopts bipolarity metal oxide and hole mobile material to adulterate, bipolarity metal oxide can improve hole injectability, and hole mobile material can improve hole transport speed, this charge generation layer can effectively improve the luminous efficiency of organic electroluminescence device.
Brief description of the drawings
Fig. 1 is the structural representation of the organic electroluminescence device of an execution mode;
Fig. 2 is the preparation method's of the organic electroluminescence device of an execution mode flow chart;
Fig. 3 is current density and the luminous efficiency graph of a relation of the organic electroluminescence device prepared of embodiment 1.
Embodiment
Below in conjunction with the drawings and specific embodiments, organic electroluminescence device and preparation method thereof is further illustrated.
Refer to Fig. 1, the organic electroluminescence device 100 of one execution mode comprises the anode 10, hole injection layer 20, the first hole transmission layer 32, the first luminescent layer 34, the first electron transfer layer 36, charge generation layer 40, the second hole transmission layer 52, the second luminescent layer 54, the second electron transfer layer 56, electron injecting layer 60 and the negative electrode 70 that stack gradually, charge generation layer 40 comprises N-shaped layer 401, intermediate layer 402 and p-type layer 403.
Anode 10 is indium tin oxide glass (ITO), aluminium zinc oxide glass (AZO) or indium-zinc oxide glass (IZO), is preferably ITO.
Hole injection layer 20 is formed at anode 10 surfaces.The material of hole injection layer 20 is selected from molybdenum trioxide (MoO
3), tungstic acid (WO
3) and vanadic oxide (V
2o
5) at least one, be preferably MoO
3.The thickness of hole injection layer 20 is 20nm～80nm, is preferably 30nm.
The first hole transmission layer 32 is formed at the surface of hole injection layer 20.The material of the first hole transmission layer 32 is selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), 4,4', 4''-tri-(carbazole-9-yl) triphenylamine (TCTA) and N, N '-(1-naphthyl)-N, N '-diphenyl-4, at least one in 4 '-benzidine (NPB), is preferably NPB.The thickness of the first hole transmission layer 32 is 20nm～60nm, is preferably 40nm.
The first luminescent layer 34 is formed at the surface of the first hole transmission layer 32.The material of the first luminescent layer 34 is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylene anthracene (ADN), 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, 1'-biphenyl (BCzVBi) and 8-hydroxyquinoline aluminum (Alq
3) at least one, be preferably BCzVBi.The thickness of luminescent layer 40 is 5nm～40nm, is preferably 20nm.
The first electron transfer layer 36 is formed at the surface of the first luminescent layer 32.The material of the first electron transfer layer 36 is selected from 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2, and at least one in 4-triazole derivative (as TAZ) and N-aryl benzimidazole (TPBI), is preferably Bphen.The thickness of the first electron transfer layer 36 is 40nm～300nm, is preferably 100nm.
Charge generation layer 40 is formed at the surface of the first electron transfer layer 36.Charge generation layer 40, charge generation layer 40 comprises N-shaped layer 401, intermediate layer 402 and p-type layer 403, described N-shaped layer 401 material are the fullerene derivate of doping cesium salt, intermediate layer 402 materials are the metal doped with the compound of hafnium, p-type layer 403 material are the hole mobile material of doping bipolarity metal oxide, and wherein, described cesium salt is selected from cesium fluoride (CsF), cesium carbonate (Cs
2cO
3), nitrine caesium (CsN
3) and cesium chloride (CsCl) at least one, described fullerene derivate is selected from [6,6]-phenyl-C61-butyric acid acid methyl esters (PC61BM), [6,6] in-phenyl-C71-butyric acid acid methyl esters (PC71BM), football alkene (C60) and football ene derivative (C70) at least one, described cesium salt and described fullerene derivate mass ratio are 1:10～2:5, and the compound of described hafnium is selected from hafnium oxide (HfO
2) and hafnium boride (HfB
2) at least one, described metal material is selected from least one in silver (Ag), aluminium (Al), platinum (Pt) and gold (Au), the compound of described hafnium is with described metal quality than being 1:20～1:5, and described doping bipolarity metal oxide is selected from molybdenum trioxide (MoO
3), tungstic acid (WO
3) and vanadic oxide (V
2o
5) at least one, described hole mobile material is selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), 4,4', 4''-tri-(carbazole-9-yl) triphenylamine (TCTA) and N, N '-(1-naphthyl)-N, N '-diphenyl-4, in 4 '-benzidine (NPB) at least one, the mass ratio of described bipolarity metal oxide and described hole mobile material is 1:10～3:10.The thickness of N-shaped layer 401 is 20nm～60nm, and described intermediate layer 402 thickness are 5nm～20nm, and the thickness of described p-type layer 403 is 5nm～30nm.
The second hole transmission layer 52 is formed at the surface of charge generation layer 40.The material of the second hole transmission layer 52 is selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), 4,4', 4''-tri-(carbazole-9-yl) triphenylamine (TCTA) and N, N '-(1-naphthyl)-N, N '-diphenyl-4, at least one in 4 '-benzidine (NPB), is preferably TCTA.The thickness of the second hole transmission layer 52 is 20nm～60nm, is preferably 30nm.
The second luminescent layer 54 is formed at the surface of the second hole transmission layer 52.The material of the second luminescent layer 54 is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylene anthracene (ADN), 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, 1'-biphenyl (BCzVBi) and 8-hydroxyquinoline aluminum (Alq
3) at least one, be preferably BCzVBi.The thickness of luminescent layer 40 is 5nm～40nm, is preferably 20nm.
The second electron transfer layer 56 is formed at the surface of the second luminescent layer 52.The material of the second electron transfer layer 56 is selected from 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2, and at least one in 4-triazole derivative (as TAZ) and N-aryl benzimidazole (TPBI), is preferably TAZ.The thickness of the second electron transfer layer 56 is 40nm～300nm, is preferably 100nm.
Electron injecting layer 60 is formed at the second electron transfer layer 56 surfaces.The material of electron injecting layer 60 is selected from cesium carbonate (Cs
2cO
3), cesium fluoride (CsF), nitrine caesium (CsN
3) and lithium fluoride (LiF) at least one, be preferably LiF.The thickness of electron injecting layer 60 is 0.5nm～10nm, is preferably 1nm.
Negative electrode 70 is formed at electron injecting layer 60 surfaces.The material of negative electrode 70 is selected from least one in silver (Ag), aluminium (Al), platinum (Pt) and gold (Au), is preferably Al.The thickness of negative electrode 70 is 60nm～300nm, is preferably 150nm.
Above-mentioned organic electroluminescence device 100, charge generation layer 40 is by comprising N-shaped layer 401, intermediate layer 402 and p-type layer 403 form, wherein, N-shaped adulterates 401 layers and is adulterated by fullerene derivate and cesium salt, fullerene is electron rich material, can improve electric transmission speed, can electron transport material after cesium salt doping in conjunction with closely, form N-shaped layer 401, can further improve electric transmission speed, improve electron density, intermediate layer 402 is hafnium compound and metal composition, the compound of hafnium has the feature of broad-band gap and high-k, improve the light transmission of charge generation layer, and metal can improve conductivity, and provide a large amount of free electrons, the number of electronics is approached with hole on the order of magnitude, and p-type layer 403 adopts bipolarity metal oxide and hole mobile material to adulterate, bipolarity metal oxide can improve hole injectability, and hole mobile material can improve hole transport speed, this charge generation layer 40 can effectively improve the luminous efficiency of organic electroluminescence device 100, organic electroluminescence device 100 has two luminescence units simultaneously, thereby has brightness and luminous efficiency at double.
Be appreciated that other functional layers also can be set in this organic electroluminescence device 100 as required.
Please refer to Fig. 2, the preparation method of the organic electroluminescence device 100 of an embodiment, it comprises the following steps:
Step S110, prepare hole injection layer 20, the first hole transmission layer 32, the first luminescent layer 34 and the first electron transfer layer 36 at anode surface successively evaporation.
Anode 10 is indium tin oxide glass (ITO), aluminium zinc oxide glass (AZO) or indium-zinc oxide glass (IZO), is preferably ITO.
In present embodiment, before anode 10 surfaces form hole injection layer 20, first antianode 10 carries out pre-treatment, pre-treatment comprises: anode 10 is carried out to photoetching treatment, be cut into needed size, adopt liquid detergent, deionized water, acetone, ethanol, the each Ultrasonic Cleaning 15min of isopropyl acetone, to remove the organic pollution on anode 10 surfaces.
Hole injection layer 20 is formed at the surface of anode 10.Hole injection layer 20 is prepared by evaporation.The material of hole injection layer 20 is selected from molybdenum trioxide (MoO
3), tungstic acid (WO
3) and vanadic oxide (V
2o
5) at least one, be preferably MoO
3.The thickness of hole injection layer 20 is 20nm～80nm, is preferably 30nm.Evaporation is 2 × 10 at vacuum pressure
-3pa～5 × 10
-5under Pa, carry out, evaporation speed is 0.1nm/s～1nm/s.
The first hole transmission layer 32 is formed at the surface of hole injection layer 20.The first hole transmission layer 32 is prepared by evaporation.The material of the first hole transmission layer 32 is selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), 4,4', 4''-tri-(carbazole-9-yl) triphenylamine (TCTA) and N, N '-(1-naphthyl)-N, N '-diphenyl-4, at least one in 4 '-benzidine (NPB), is preferably TAPC.The thickness of the first hole transmission layer 32 is 20nm～60nm, is preferably 40nm.Evaporation is 2 × 10 at vacuum pressure
-3pa～5 × 10
-5under Pa, carry out, evaporation speed is 0.1nm/s～1nm/s.
The first luminescent layer 34 is formed at the surface of the first hole transmission layer 32.The first luminescent layer 34 is prepared by evaporation.The material of the first luminescent layer 34 is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylene anthracene (ADN), 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, 1'-biphenyl (BCzVBi) and 8-hydroxyquinoline aluminum (Alq
3) at least one, be preferably BCzVBi.The thickness of luminescent layer 40 is 5nm～40nm, is preferably 20nm.Evaporation is 2 × 10 at vacuum pressure
-3pa～5 × 10
-5under Pa, carry out, evaporation speed is 0.1nm/s～1nm/s.
The first electron transfer layer 36 is formed at the surface of the first luminescent layer 32.The first electron transfer layer 36 is prepared by evaporation.The material of the first electron transfer layer 36 is selected from 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2, and at least one in 4-triazole derivative (as TAZ) and N-aryl benzimidazole (TPBI), is preferably Bphen.The thickness of the first electron transfer layer 36 is 40nm～300nm, is preferably 100nm.Evaporation is 2 × 10 at vacuum pressure
-3pa～5 × 10
-5under Pa, carry out, evaporation speed is 0.1nm/s～1nm/s.
Step S120, prepare charge generation layer 40 at the surperficial evaporation of the first electron transfer layer 36.
Charge generation layer 40 is formed at the surface of the first electron transfer layer 36, charge generation layer 40 comprises N-shaped layer 401, intermediate layer 402 and p-type layer 403, described N-shaped layer 401 material are the fullerene derivate of doping cesium salt, intermediate layer 402 materials are the metal doped with the compound of hafnium, p-type layer 403 material are the hole mobile material of doping bipolarity metal oxide, and wherein, described cesium salt is selected from cesium fluoride (CsF), cesium carbonate (Cs
2cO
3), nitrine caesium (CsN
3) and cesium chloride (CsCl) at least one, described fullerene derivate is selected from [6,6]-phenyl-C61-butyric acid acid methyl esters (PC61BM), [6,6] in-phenyl-C71-butyric acid acid methyl esters (PC71BM), football alkene (C60) and football ene derivative (C70) at least one, described cesium salt and described fullerene derivate mass ratio are 1:10～2:5, and the compound of described hafnium is selected from hafnium oxide (HfO
2) and hafnium boride (HfB
2) at least one, described metal material is selected from least one in silver (Ag), aluminium (Al), platinum (Pt) and gold (Au), the compound of described hafnium is with described metal quality than being 1:20～1:5, and described doping bipolarity metal oxide is selected from molybdenum trioxide (MoO
3), tungstic acid (WO
3) and vanadic oxide (V
2o
5) at least one, described hole mobile material is selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), 4,4', 4''-tri-(carbazole-9-yl) triphenylamine (TCTA) and N, N '-(1-naphthyl)-N, N '-diphenyl-4, in 4 '-benzidine (NPB) at least one, the mass ratio of described bipolarity metal oxide and described hole mobile material is 1:10～3:10.The thickness of N-shaped layer 401 is 20nm～60nm, and described intermediate layer 402 thickness are 5nm～20nm, and the thickness of described p-type layer 403 is 5nm～30nm.Evaporation is 2 × 10 at vacuum pressure
-3～5 × 10
-5under Pa, carry out, the evaporation speed of organic material is 0.1～1nm/s, and the evaporation speed of metal and metallic compound is 1～10nm/s.
Step S130, prepare the second hole transmission layer 52, the second luminescent layer 54, the second electron transfer layer 56, electron injecting layer 60 and negative electrode 70 on charge generation layer surface successively evaporation.
The second hole transmission layer 52 is formed at the surface of doped zinc oxide diamicton 403.The material of the second hole transmission layer 52 is selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), 4,4', 4''-tri-(carbazole-9-yl) triphenylamine (TCTA) and N, N '-(1-naphthyl)-N, N '-diphenyl-4, at least one in 4 '-benzidine (NPB), is preferably TCTA.The thickness of the second hole transmission layer 52 is 20nm～60nm, is preferably 30nm.Evaporation is 2 × 10 at vacuum pressure
-3～5 × 10
-5under Pa, carry out, evaporation speed is 0.1nm/s～1nm/s.
The second luminescent layer 54 is formed at the surface of the second hole transmission layer 52.The material of the second luminescent layer 54 is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylene anthracene (ADN), 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, 1'-biphenyl (BCzVBi) and 8-hydroxyquinoline aluminum (Alq
3) at least one, be preferably BCzVBi.The thickness of luminescent layer 40 is 5nm～40nm, is preferably 20nm.Evaporation is 2 × 10 at vacuum pressure
-3～5 × 10
-5under Pa, carry out, evaporation speed is 0.1nm/s～1nm/s.
The second electron transfer layer 56 is formed at the surface of the second luminescent layer 52.The material of the second electron transfer layer 56 is selected from 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2, and at least one in 4-triazole derivative (as TAZ) and N-aryl benzimidazole (TPBI), is preferably TAZ.The thickness of the second electron transfer layer 56 is 40nm～300nm, is preferably 100nm.Evaporation is 2 × 10 at vacuum pressure
-3～5 × 10
-5under Pa, carry out, evaporation speed is 0.1nm/s～1nm/s.
Electron injecting layer 60 is formed at the second electron transfer layer 56 surfaces.The material of electron injecting layer 60 is selected from cesium carbonate (Cs
2cO
3), cesium fluoride (CsF), nitrine caesium (CsN
3) and lithium fluoride (LiF) at least one, be preferably LiF.The thickness of electron injecting layer 60 is 0.5nm～10nm, is preferably 1nm.Evaporation is 2 × 10 at vacuum pressure
-3～5 × 10
-5under Pa, carry out, evaporation speed is 0.1nm/s～1nm/s.
Negative electrode 70 is formed at electron injecting layer 60 surfaces.The material of negative electrode 70 is selected from least one in silver (Ag), aluminium (Al), platinum (Pt) and gold (Au), is preferably Al.The thickness of negative electrode 70 is 60nm～300nm, is preferably 150nm.Evaporation is 2 × 10 at vacuum pressure
-3～5 × 10
-5under Pa, carry out, evaporation speed is 1nm/s～10nm/s.
Above-mentioned organic electroluminescence device preparation method, technique is simple, and the luminous efficiency of the organic electroluminescence device of preparation is higher.
Below in conjunction with specific embodiment, the preparation method of organic electroluminescence device provided by the invention is elaborated.
The preparation used of the embodiment of the present invention and comparative example and tester are: high vacuum coating system (scientific instrument development center, Shenyang Co., Ltd), the USB4000 fiber spectrometer testing electroluminescent spectrum of U.S. marine optics Ocean Optics, the Keithley2400 test electric property of Keithley company of the U.S., CS-100A colorimeter test brightness and the colourity of Japanese Konica Minolta company.
Embodiment 1
Structure prepared by the present embodiment is ITO/MoO
3/ NPB/BCzVBi/Bphen/CsF:PC61BM/HfO
2: Ag/NPB:MoO
3the organic electroluminescence device of/TCTA/BCzVBi/TAZ/LiF/Al.Wherein, "/" presentation layer stack structure, ": " represents doping or mixes, following examples are identical.
First ITO is carried out to photoetching treatment, be cut into needed size, use successively liquid detergent, deionized water, acetone, ethanol, the each ultrasonic 15min of isopropyl alcohol, the organic pollution of removal glass surface; Evaporation hole injection layer, material is MoO
3, thickness is 30nm; Evaporation the first hole transmission layer, material is NPB, thickness is 40nm; Evaporation the first luminescent layer, material is BCzVBi, thickness is 20nm; Evaporation the first electron transfer layer, material is Bphen, thickness is 100nm; Evaporation charge generation layer, N-shaped layer is CsF:PC61BM, and CsF and PC61BM mass ratio are 3:20, and thickness is 30nm, and intermediate layer material is HfO
2: Ag, HfO
2with Ag mass ratio be 3:100, thickness is 10nm, p-type layer material is NPB:MoO
3, NPB and MoO
3mass ratio is 1:4, and thickness is 10nm; Evaporation the second hole transmission layer, material is TCTA, thickness is 30nm; Evaporation the second luminescent layer, material is BCzVBi, thickness is 20nm; Evaporation the second electron transfer layer, material is TAZ, thickness is 100nm; Evaporation electron injecting layer, material is LiF, thickness is 1nm; Evaporation negative electrode, material is Al, thickness is 150nm.Finally obtain needed electroluminescent device.Evaporation is 8 × 10 at vacuum pressure
-5under Pa, carry out, the evaporation speed of organic material is 0.2nm/s, and the evaporation speed of metal and metallic compound is 3nm/s.
Refer to Fig. 3, the structure that is depicted as preparation in embodiment 1 is ITO/MoO
3/ NPB/BCzVBi/Bphen/CsF:PC61BM/HfO
2: Ag/NPB:MoO
3the organic electroluminescence device (curve 1) of/TCTA/BCzVBi/TAZ/LiF/Al is ito glass/MoO with structure prepared by comparative example
3/ NPB/BCzVBi/TAZ/LiF/Al(curve 2) current density and the relation of luminous efficiency.In the organic electroluminescence device that in organic electroluminescence device prepared by comparative example, each layer thickness is prepared with embodiment 1, each layer thickness is identical.
As seen from Figure 3, under different current densities, all large than comparative example of the luminous efficiency of embodiment 1, the maximum lumen efficiency of organic electroluminescence device prepared by embodiment 1 is 4.4lm/W, and the luminous efficiency of organic electroluminescence device prepared by comparative example is only 2.6lm/W, and the luminous efficiency of comparative example along with the increase of brightness fast-descending, this explanation, charge generation layer is by comprising N-shaped layer, intermediate layer and p-type layer form, wherein, N-shaped doped layer is adulterated by fullerene derivate and cesium salt, fullerene is electron rich material, can improve electric transmission speed, can electron transport material after cesium salt doping in conjunction with closely, form N-shaped layer, can further improve electric transmission speed, improve electron density, intermediate layer is hafnium compound and metal composition, the compound of hafnium has the feature of broad-band gap and high-k, improve the light transmission of charge generation layer, and metal can improve conductivity, and provide a large amount of free electrons, the number of electronics is approached with hole on the order of magnitude, and p-type layer adopts bipolarity metal oxide and hole mobile material to adulterate, bipolarity metal oxide can improve hole injectability, and hole mobile material can improve hole transport speed, this charge generation layer can effectively improve the luminous efficiency of organic electroluminescence device.
The luminous efficiency of the organic electroluminescence device that below prepared by each embodiment is all similar with embodiment 1, and each organic electroluminescence device also has similar luminous efficiency, repeats no more below.
Embodiment 2
Structure prepared by the present embodiment is AZO/WO
3/ TCTA/ADN/TPBi/Cs
2cO
3: PC71BM/HfB
2: Al/TCTA:V
2o
5/ NPB/ADN/TAZ/CsN
3the organic electroluminescence device of/Pt.
First AZO substrate of glass is used to liquid detergent successively, deionized water, ultrasonic 15min, the organic pollution of removal glass surface; Evaporation is prepared hole injection layer, and material is WO
3, thickness is 80nm; Evaporation is prepared the first hole transmission layer, and material is TCTA, and thickness is 60nm; Evaporation is prepared the first luminescent layer, and material is ADN, and thickness is 5nm; Evaporation is prepared the first electron transfer layer, and material is TPBi, and thickness is 200nm; Evaporation charge generation layer, N-shaped layer is Cs
2cO
3: PC71BM, Cs
2cO
3with PC71BM mass ratio be 1:10, thickness is, 60nm, intermediate layer material is HfB
2: Al, HfB
2with Al mass ratio be 1:10, thickness is 5nm, p-type layer is TCTA:V
2o
5, TCTA and V
2o
5mass ratio is 1:10, and thickness is 30nm; Evaporation is prepared the second hole transmission layer, and material is NPB, and thickness is 20nm, the second luminescent layer, and material is ADN, thickness is 7nm; Evaporation is prepared the second electron transfer layer, and material is TAZ, and thickness is 40nm; Evaporation is prepared electron injecting layer, and material is CsN
3, thickness is 0.5nm; Evaporation is prepared negative electrode, and material is Pt, and thickness is 60nm, finally obtains needed electroluminescent device.Evaporation is 2 × 10 at vacuum pressure
-3under Pa, carry out, the evaporation speed of organic material is 0.1nm/s, and the evaporation speed of metal and metallic compound is 10nm/s.
Embodiment 3
Structure prepared by the present embodiment is IZO/WO
3/ NPB/Alq
3/ TAZ/CsN
3: C60/HfO
2: Pt/TAPC:WO
3/ TAPC/Alq
3the organic electroluminescence device of/Bphen/CsF/Ag.
First IZO substrate of glass is used to liquid detergent successively, deionized water, ultrasonic 15min, the organic pollution of removal glass surface; Evaporation is prepared hole injection layer, and material is WO
3, thickness is 20nm; Evaporation is prepared the first hole transmission layer, and material is NPB, and thickness is 30nm; Evaporation is prepared the first luminescent layer, and material is Alq
3, thickness is 40nm; Evaporation is prepared the first electron transfer layer, and material is TAZ, and thickness is 60nm; Evaporation is prepared charge generation layer, and N-shaped layer is CsN
3: C60, CsN
3with C60 mass ratio be 2:5, thickness is 20nm, intermediate layer material is HfO
2: Pt, HfO
2with Pt mass ratio be 1:50, thickness is 20nm, p-type layer is TAPC:WO
3, TAPC and WO
3mass ratio is 3:10, and thickness is 5nm; Evaporation is prepared the second hole transmission layer, and material is TAPC, and thickness is 200nm; Evaporation is prepared the second luminescent layer, and material is Alq
3, thickness is 30nm; Evaporation is prepared the second electron transfer layer, and material is Bphen, and thickness is 40nm; Evaporation is prepared electron injecting layer, and material is CsF, and thickness is 0.5nm; Evaporation is prepared negative electrode, and material is Ag, and thickness is 300nm, finally obtains needed electroluminescent device.Evaporation is 5 × 10 at vacuum pressure
-5under Pa, carry out, the evaporation speed of organic material is 1nm/s, and the evaporation speed of metal and metallic compound is 1nm/s.
Embodiment 4
Structure prepared by the present embodiment is IZO/V
2o
5/ TAPC/DCJTB/TPBi/CsCl:C70/HfB
2: Au/TCTA:MoO
3/ TAPC/DCJTB/TAZ/Cs
2cO
3the organic electroluminescence device of/Au.
First IZO substrate of glass is used to liquid detergent successively, deionized water, ultrasonic 15min, the organic pollution of removal glass surface; Evaporation is prepared hole injection layer, and material is V
2o
5, thickness is 30nm; Evaporation is prepared the first hole transmission layer, and material is TAPC, and thickness is 50nm; Evaporation is prepared the first luminescent layer, and material is DCJTB, and thickness is 5nm; Evaporation is prepared the first electron transfer layer, and material is TPBi, and thickness is 40nm; Evaporation is prepared charge generation layer, and N-shaped layer is CsCl:C70, and CsCl and C70 mass ratio are 3:10, thickness 35nm, and intermediate layer material is HfB
2: Au, HfB
2and mass ratio is 7:100 between Au, thickness is 10nm, and p-type layer is TCTA:MoO
3, TCTA and MoO
3mass ratio is 1:5, and thickness is 10nm; Evaporation is prepared the second hole transmission layer, and material is TAPC, and thickness is 50nm, the second luminescent layer, and material is DCJTB, thickness is 5nm; Evaporation is prepared the second electron transfer layer, and material is TAZ, and thickness is 80nm; Evaporation is prepared electron injecting layer, and material is Cs
2cO
3, thickness is 2nm; Evaporation is prepared negative electrode, and material is Au, and thickness is 100nm, finally obtains needed electroluminescent device.Evaporation is 5 × 10 at vacuum pressure
-4under Pa, carry out, the evaporation speed of organic material is 0.2nm/s, and the evaporation speed of metal and metallic compound is 5nm/s.
The above embodiment has only expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (10)
1. an organic electroluminescence device, it is characterized in that, comprise the anode stacking gradually, hole injection layer, the first hole transmission layer, the first luminescent layer, the first electron transfer layer, charge generation layer, the second hole transmission layer, the second luminescent layer, the second electron transfer layer, electron injecting layer and negative electrode, described charge generation layer comprises N-shaped layer, intermediate layer and p-type layer, described N-shaped layer material is the fullerene derivate of doping cesium salt, intermediate layer material is the metal doped with the compound of hafnium, p-type layer material is the hole mobile material of doping bipolarity metal oxide, wherein, described cesium salt is selected from cesium carbonate, nitrine caesium, in cesium fluoride and cesium chloride at least one, described fullerene derivate is selected from [6, 6]-phenyl-C61-butyric acid acid methyl esters, [6, 6]-phenyl-C71-butyric acid acid methyl esters, in football alkene and football ene derivative at least one, described cesium salt and described fullerene derivate mass ratio are 1:10～2:5, the compound of described hafnium is selected from least one in hafnium oxide and hafnium boride, described metal material is selected from silver, aluminium, in platinum and gold at least one, the compound of described hafnium is 1:20～1:5 with described metal quality ratio, described doping bipolarity metal oxide is selected from molybdenum trioxide, in tungstic acid and vanadic oxide at least one, described hole mobile material is selected from 1, 1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, 4, 4', 4''-tri-(carbazole-9-yl) triphenylamine and N, N '-(1-naphthyl)-N, N '-diphenyl-4, in 4 '-benzidine at least one, the mass ratio of described bipolarity metal oxide and described hole mobile material is 1:10～3:10.
2. organic electroluminescence device according to claim 1, is characterized in that, the thickness of described N-shaped layer is 20nm～60nm, and described intermediate layer thickness is 5nm～20nm, and the thickness of described p-type layer is 5nm～30nm.
3. organic electroluminescence device according to claim 1, it is characterized in that, the material of described the first luminescent layer and described the second luminescent layer is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans, 9,10-bis--β-naphthylene anthracene, 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, at least one in 1'-biphenyl and oxine aluminium.
4. organic electroluminescence device according to claim 1, it is characterized in that, the material of described the first hole transmission layer and described the second hole transmission layer is selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, 4,4', 4''-tri-(carbazole-9-yl) triphenylamine and N, N '-(1-naphthyl)-N, N '-diphenyl-4, at least one in 4 '-benzidine.
5. organic electroluminescence device according to claim 1, is characterized in that, the material of described the first electron transfer layer and described the second electron transfer layer is selected from 4,7-diphenyl-1,10-phenanthroline, 1,2, at least one in 4-triazole derivative and N-aryl benzimidazole.
6. a preparation method for organic electroluminescence device, is characterized in that, comprises the following steps:
Prepare hole injection layer, the first hole transmission layer, the first luminescent layer and the first electron transfer layer at anode surface successively evaporation;
Prepare charge generation layer at described the first electron transfer layer surface evaporation, described charge generation layer comprises N-shaped layer, intermediate layer and p-type layer, described N-shaped layer material is the fullerene derivate of doping cesium salt, intermediate layer material is the metal doped with the compound of hafnium, p-type layer material is the hole mobile material of doping bipolarity metal oxide, wherein, described cesium salt is selected from cesium carbonate, nitrine caesium, in cesium fluoride and cesium chloride at least one, described fullerene derivate is selected from [6, 6]-phenyl-C61-butyric acid acid methyl esters, [6, 6]-phenyl-C71-butyric acid acid methyl esters, in football alkene and football ene derivative at least one, described cesium salt and described fullerene derivate mass ratio are 1:10～2:5, the compound of described hafnium is selected from least one in hafnium oxide and hafnium boride, described metal material is selected from silver, aluminium, in platinum and gold at least one, the compound of described hafnium is 1:20～1:5 with described metal quality ratio, described doping bipolarity metal oxide is selected from molybdenum trioxide, in tungstic acid and vanadic oxide at least one, described hole mobile material is selected from 1, 1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, 4, 4', 4''-tri-(carbazole-9-yl) triphenylamine and N, N '-(1-naphthyl)-N, N '-diphenyl-4, in 4 '-benzidine at least one, the mass ratio of described bipolarity metal oxide and described hole mobile material is 1:10～3:10, evaporation is 2 × 10 at vacuum pressure
-3～5 × 10
-5under Pa, carry out, the evaporation speed of organic material is 0.1～1nm/s, and the evaporation speed of metal and metallic compound is 1～10nm/s, and
Form the second hole transmission layer, the second luminescent layer, the second electron transfer layer, electron injecting layer and negative electrode on described charge generation layer surface successively evaporation.
7. the preparation method of organic electroluminescence device according to claim 6, it is characterized in that, the material of described the first luminescent layer and described the second luminescent layer is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans, 9,10-bis--β-naphthylene anthracene, 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, at least one in 1'-biphenyl and oxine aluminium.
8. the preparation method of organic electroluminescence device according to claim 6, it is characterized in that, the material of described the first hole transmission layer and described the second hole transmission layer is selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, 4,4', 4''-tri-(carbazole-9-yl) triphenylamine and N, N '-(1-naphthyl)-N, N '-diphenyl-4, at least one in 4 '-benzidine.
9. the preparation method of organic electroluminescence device according to claim 6, is characterized in that, the thickness of described N-shaped layer is 20nm～60nm, and described intermediate layer thickness is 5nm～20nm, and the thickness of described p-type layer is 5nm～30nm.
10. the preparation method of organic electroluminescence device according to claim 6, it is characterized in that, before described anode surface forms hole injection layer, first antianode carries out pre-treatment, pre-treatment comprises: anode is carried out to photoetching treatment, be cut into needed size, adopt liquid detergent, deionized water, acetone, ethanol, the each Ultrasonic Cleaning 15min of isopropyl acetone, to remove the organic pollution of anode surface.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107611271A (en) * | 2017-08-10 | 2018-01-19 | 上海天马有机发光显示技术有限公司 | Organic light emitting diode, display panel and display device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101006594A (en) * | 2004-08-20 | 2007-07-25 | 伊斯曼柯达公司 | White OLED having multiple white electroluminescent units |
| JP2010080309A (en) * | 2008-09-26 | 2010-04-08 | Sumitomo Chemical Co Ltd | Organic electroluminescence element, and method for manufacturing the same |
| CN102097598A (en) * | 2010-12-06 | 2011-06-15 | 电子科技大学 | Organic light-emitting device and production method thereof |
| US20110215714A1 (en) * | 2010-03-02 | 2011-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Element and Lighting Device |
| CN102450101A (en) * | 2009-05-29 | 2012-05-09 | 株式会社半导体能源研究所 | Light-emitting element, light-emitting device, electronic device, and lighting device |
| CN102842593A (en) * | 2011-06-22 | 2012-12-26 | 海洋王照明科技股份有限公司 | Polymer solar cell and preparation method thereof |
-
2013
- 2013-05-24 CN CN201310198555.7A patent/CN104183740A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101006594A (en) * | 2004-08-20 | 2007-07-25 | 伊斯曼柯达公司 | White OLED having multiple white electroluminescent units |
| JP2010080309A (en) * | 2008-09-26 | 2010-04-08 | Sumitomo Chemical Co Ltd | Organic electroluminescence element, and method for manufacturing the same |
| CN102450101A (en) * | 2009-05-29 | 2012-05-09 | 株式会社半导体能源研究所 | Light-emitting element, light-emitting device, electronic device, and lighting device |
| US20110215714A1 (en) * | 2010-03-02 | 2011-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Element and Lighting Device |
| CN102097598A (en) * | 2010-12-06 | 2011-06-15 | 电子科技大学 | Organic light-emitting device and production method thereof |
| CN102842593A (en) * | 2011-06-22 | 2012-12-26 | 海洋王照明科技股份有限公司 | Polymer solar cell and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107611271A (en) * | 2017-08-10 | 2018-01-19 | 上海天马有机发光显示技术有限公司 | Organic light emitting diode, display panel and display device |
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