CN107302013A - Pixel structure - Google Patents

Abstract

A pixel structure includes a substrate, a first electrode layer, a second electrode layer, a first luminescent layer, a second luminescent layer, a third luminescent layer and a thickening layer. The substrate includes first, second and third sub-pixel areas. The first and second electrode layers are arranged on the substrate and located in the first, second and third sub-pixel areas. The first, second and third luminescent layers are arranged between the first electrode layer and the second electrode layer. The first luminescent layer is located in the first sub-pixel area, the second luminescent layer is located in the second sub-pixel area, and the third luminescent layer is located between the first electrode layer and the second electrode layer. The light-emitting layer is located in the second and third sub-pixel areas, and the third light-emitting layer and the second light-emitting layer overlap in the second sub-pixel area. The first and second light-emitting layers are arranged on one side of the thickened layer opposite to the first electrode layer, and the thickened layer is a single structural layer and is only located in the first and second sub-pixel regions.

Description

pixel structure

technical field

The present invention relates to a pixel structure, and in particular to a pixel structure for an organic electroluminescence display panel.

Background technique

Organic electroluminescent display panels (such as organic light-emitting diodes (OLEDs) display panels) have the advantages of active light emission, high contrast, thin thickness and wide viewing angle, and are expected to become the mainstream products of the new generation of flat display panels.

Due to the resonant cavity effect of the OLED display panel, its high efficiency and high color purity can be exhibited through proper optical design. In the side-by-side (SBS) OLED display panel of the prior art, the light-emitting layer generally needs to be evaporated separately for the RGB sub-pixels using a fine metal mask (FMM). In order to meet the resonant cavity effect, besides the light-emitting layer, other layers still need to use FMM to adjust the light color and intensity of individual RGB sub-pixels respectively.

However, FMM technology requires high cost and precise alignment. To be more specific, FMM not only has its limit on the distance between adjacent openings, but also requires precise alignment with the substrate and adjustment of related process parameters to obtain optimal evaporation results and avoid problems such as color mixing. These technical bottlenecks directly affect the spacing between RGB sub-pixels and the design of panel resolution. In view of this, there is an urgent need for a pixel structure that can reduce the number of times the FMM is used, thereby reducing the production cost and process difficulty, while maintaining the performance of the OLED device in the prior art.

Contents of the invention

The technical problem to be solved by the present invention is to provide a pixel structure that can reduce the number of times of using a fine metal mask (FMM), thereby reducing production cost and process difficulty.

In order to achieve the above object, the present invention provides a pixel structure, including a substrate, a first electrode layer, a second electrode layer, a first light emitting layer, a second light emitting layer, a third light emitting layer and a thickening layer. The substrate includes a first sub-pixel area, a second sub-pixel area and a third sub-pixel area. The first electrode layer is configured on the substrate and located in the first sub-pixel area, the second sub-pixel area and the third sub-pixel area. The second electrode layer is disposed on the first electrode layer and located in the first sub-pixel area, the second sub-pixel area and the third sub-pixel area. The first light-emitting layer, the second light-emitting layer and the third light-emitting layer are arranged between the first electrode layer and the second electrode layer, wherein the first light-emitting layer is located in the first sub-pixel area, and the second light-emitting layer is located in the second sub-pixel In the area, the third light emitting layer is located in the second sub-pixel area and the third sub-pixel area, and the third light emitting layer and the second light emitting layer overlap in the second sub-pixel area. The first light-emitting layer and the second light-emitting layer are arranged on the side of the thickening layer opposite to the first electrode layer, and the thickening layer is a single structure layer and is only located in the first sub-pixel area and the second sub-pixel area.

Technical effect of the present invention is:

In the pixel structure of the present invention, through the third light-emitting layer located in the second sub-pixel region and the third sub-pixel region, the third light-emitting layer and the second light-emitting layer overlap in the second sub-pixel region, and the first light-emitting layer layer and the second light-emitting layer are arranged on the side of the thickened layer opposite to the first electrode layer, and the thickened layer is a single structural layer and the thickened layer is only located in the first sub-pixel area and the second sub-pixel area, by This enables the pixel structure to reduce the number of times the FMM is used while maintaining good device performance, thereby reducing production cost and process difficulty and improving applicability.

The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

Description of drawings

1 is a schematic cross-sectional view of a pixel structure according to a first embodiment of the present invention;

FIG. 2 is a graph showing the relationship between the wavelength and intensity of red light and green light emitted by the pixel structure in FIG. 1 and the prior art pixel structure;

3 is a schematic cross-sectional view of a pixel structure according to a second embodiment of the present invention;

FIG. 4 is a graph showing the relationship between the wavelength and intensity of red light and green light emitted by the pixel structure of FIG. 3 and the prior art pixel structure;

5 is a schematic cross-sectional view of a pixel structure according to a third embodiment of the present invention;

6 is a graph showing the relationship between the wavelength and intensity of red light and green light emitted by the pixel structure in FIG. 5 and the prior art pixel structure;

7 is a schematic cross-sectional view of a pixel structure according to a fourth embodiment of the present invention;

FIG. 8 is a graph showing the relationship between the wavelength and the intensity of red light and green light emitted by the pixel structure of FIG. 7 and the prior art pixel structure.

Among them, reference signs

10, 20, 30, 40: pixel structure

100: Substrate

100a: the first sub-pixel area

100b: the second sub-pixel area

100c: the third sub-pixel area

110: component layer

120: first electrode layer

120a, 120b, 120c, 250a, 250b, 450a, 450b: electrode patterns

130: hole injection layer

140, 150: hole transport layer

160, 360: the first light-emitting layer

162, 362: the second light-emitting layer

164, 364: the third luminous layer

170: electron transport layer

180: electron injection layer

190: second electrode layer

250, 450: the third electrode layer

IA, ID: first shade

IB, IE: Second color light

IC, IF: third color light

detailed description

Below in conjunction with accompanying drawing, structural principle and working principle of the present invention are specifically described:

The pixel structure of the present invention can be applied in OLED display panels, for example. Based on this, although in order to describe the design of the pixel structure of the present invention in detail, the following is an example of a single pixel structure, but any person skilled in the art should understand that an organic light emitting diode display panel generally includes multiple identical or A pixel array formed by arrays of similar pixel structures. Therefore, anyone skilled in the art can understand the structure or layout of the pixel array in the OLED display panel according to the following description for a single pixel structure.

FIG. 1 is a schematic cross-sectional view of a pixel structure according to a first embodiment of the present invention. Referring to FIG. 1, the pixel structure 10 includes a substrate 100, a first electrode layer 120, a second electrode layer 190, a first light-emitting layer 160, a second light-emitting layer 162, a third light-emitting layer 164, and a thickened layer (for example, a thickened layer It is a hole transport layer (hole transport layer, HTL) 150). In addition, in this embodiment, the display device 10 may further include an element layer 110, a hole injection layer (hole injection layer, HIL) 130, a hole transport layer (hole transport layer, HTL) 140, an electron transport layer (electron transport layer, ETL) 170, electron injection layer (electron injection layer, EIL) 180.

The substrate 100 includes a first sub-pixel area 100a, a second sub-pixel area 100b and a third sub-pixel area 100c. In this embodiment, the first sub-pixel region 100a, the second sub-pixel region 100b and the third sub-pixel region 100c are respectively used to display light of different colors. In this embodiment, the substrate 100 may at least include the first sub-pixel region 100a, the second sub-pixel region 100b and the third sub-pixel region 100c, or only the first sub-pixel region 100a, the second sub-pixel region 100b and The third sub-pixel area 100c is formed. In this embodiment, the first sub-pixel region 100a, the second sub-pixel region 100b, and the third sub-pixel region 100c may be arranged side by side, that is, the first sub-pixel region 100a and the second sub-pixel region 100b are disposed adjacently, and the second sub-pixel region 100b is disposed adjacent to the third sub-pixel region 100c, but not limited thereto. In addition, in this embodiment, the material of the substrate 100 is, for example, glass, quartz, organic polymer, or metal.

The device layer 110 is disposed on the substrate 100 . In this embodiment, the element layer 110 may be any active element layer known to those skilled in the art. Specifically, in this embodiment, the element layer 110 may include a plurality of thin film transistors (thin film transistor, TFT), capacitors and other driving elements, but the present invention is not limited thereto.

The first electrode layer 120 is disposed on the substrate 100 . In detail, in this embodiment, the first electrode layer 120 includes an electrode pattern 120a, an electrode pattern 120b, and an electrode pattern 120c separated from each other, wherein the electrode pattern 120a is located in the first sub-pixel region 100a, and the electrode pattern 120b is located in the second sub-pixel region 100a. In the sub-pixel area 100b, the electrode pattern 120c is located in the third sub-pixel area 100c. That is to say, in this embodiment, the first electrode layer 120 is a patterned electrode layer, and the first electrode layer 120 is located in the first sub-pixel region 100a, the second sub-pixel region 100b and the third sub-pixel region 100c middle.

In this embodiment, the first electrode layer 120 can be formed by any method of manufacturing an electrode layer known to those skilled in the art. For example, in one embodiment, the method for forming the first electrode layer 120 includes the following steps: using a chemical vapor deposition (chemical vapor deposition, CVD) process or a physical vapor deposition (physical vapor deposition, PVD) process on the substrate 100 An electrode material layer is formed and then patterned using a lithography etching process. For another example, in one embodiment, the method for forming the first electrode layer 120 includes performing an inject printing process.

In addition, in this embodiment, the material of the first electrode layer 120 may include a reflective material, such as a conductive material such as metal, alloy, metal oxide, or a stacked layer of a metal and a transparent metal oxide conductive material. The metal oxide conductive material is, for example, indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium zinc oxide or other suitable oxides. That is to say, in this embodiment, the first electrode layer 120 is a reflective electrode layer, whereby the pixel structure 10 belongs to a top emission type design.

The hole injection layer 130 and the hole transport layer 140 are sequentially disposed on the first electrode layer 120 . In detail, in this embodiment, the hole injection layer 130 and the hole transport layer 140 are located in the first sub-pixel region 100a, the second sub-pixel region 100b and the third sub-pixel region 100c. In addition, the forming method of the hole injection layer 130 and the hole transport layer 140 includes, for example, performing an evaporation process or an inkjet process. The material of the hole injection layer 130 includes, for example, xylocyanine blue copper, star aromatic amines, polyaniline, polyethylene dioxythiophene, or other suitable materials. The material of the hole transport layer 140 includes, for example, triarylamines, cross-structured diamine biphenyls, diamine biphenyl derivatives, or other suitable materials. It is worth mentioning that, in this embodiment, the pixel structure 10 includes the hole injection layer 130 and the hole transport layer 140 , but the present invention is not limited thereto. In other embodiments, the pixel structure 10 may only include the hole injection layer 130 or the hole transport layer 140 , or the pixel structure 10 may not include the hole injection layer 130 and the hole transport layer 140 . That is to say, the configuration of the hole injection layer 130 and the hole transport layer 140 is optional.

The hole transport layer 150 is disposed between the first light emitting layer 160 and the second light emitting layer 162 and the first electrode layer 120 to meet the optical thickness of the light emitted by the first light emitting layer 160 and the second light emitting layer 162 . From another point of view, the first light emitting layer 160 and the second light emitting layer 162 are disposed on the side of the hole transport layer 150 opposite to the first electrode layer 120 . In detail, in this embodiment, the hole transport layer 150 is disposed between the first light emitting layer 160 and the second light emitting layer 162 and the hole transport layer 140 .

In addition, in this embodiment, the hole transport layer 150 is a continuous structural layer and is only located in the first sub-pixel region 100a and the second sub-pixel region 100b. That is to say, the hole transport layer 150 is continuously distributed in the first sub-pixel region 100a and the second sub-pixel region 100b. From another point of view, in this embodiment, the hole transport layer 150 is a single structural layer formed in one process. Based on this, in this embodiment, the thickness of the hole transport layer 150 in the first sub-pixel region 100 a is substantially the same as the thickness of the hole transport layer 150 in the second sub-pixel region 100 b. The hole transport layer 150 is formed by, for example, an evaporation process combined with a fine metal mask (FMM) or an inkjet process. The material of the hole transport layer 150 includes, for example, triarylamines, cross-structured diamine biphenyls, diamine biphenyl derivatives, or other suitable materials, and may be the same as or different from the hole transport layer 140 .

The first light emitting layer 160 , the second light emitting layer 162 and the third light emitting layer 164 are arranged between the first electrode layer 120 and the second electrode layer 190 . In detail, in this embodiment, the first light-emitting layer 160 is located in the first sub-pixel region 100a, the second light-emitting layer 162 is located in the second sub-pixel region 100b, and the third light-emitting layer 164 is located in the second sub-pixel region 100b and in the third sub-pixel region 100c, and the third light-emitting layer 164 overlaps with the second light-emitting layer 162 in the second sub-pixel region 100b. More specifically, in this embodiment, the first light emitting layer 160 and the second light emitting layer 162 are arranged in parallel, and the second light emitting layer 162 and the third light emitting layer 164 are arranged in an overlapping manner. That is to say, in this embodiment, the first light-emitting layer 160 is only located in the first sub-pixel region 100a, and the second light-emitting layer 162 is only located in the second sub-pixel region 100b.

In addition, in this embodiment, since the first light-emitting layer 160 and the second light-emitting layer 162 are located on the hole transport layer 150, and as mentioned above, the hole transport layer 150 is a single structural layer, so the first light-emitting layer Layer 160 and the second light-emitting layer 162 are located on the same layer. On the other hand, also as mentioned above, since the thickness of the hole transport layer 150 in the first sub-pixel region 100a is substantially the same as the thickness of the hole transport layer 150 in the second sub-pixel region 100b, it is arranged in the hole The first light emitting layer 160 and the second light emitting layer 162 on the transmission layer 150 are located on the same horizontal plane. That is to say, in this embodiment, the minimum distance between the first light emitting layer 150 and the first electrode layer 120 is substantially the same as the minimum distance between the second light emitting layer 152 and the first electrode layer 120 .

In addition, in this embodiment, the third light emitting layer 164 is a continuous structure layer, which is continuously distributed in the second sub-pixel region 100b and the third sub-pixel region 100c. Furthermore, in this embodiment, in order to improve the luminous efficiency of the pixel structure 10, the third light emitting layer 164 is preferably only distributed in the second sub-pixel region 100b and the third sub-pixel region 100c. That is to say, the third light emitting layer 164 only overlaps with the second light emitting layer 162 , but does not overlap with the first light emitting layer 160 .

In addition, in this embodiment, the first light-emitting layer 160 , the second light-emitting layer 162 and the third light-emitting layer 164 are formed by, for example, vapor deposition process and corresponding FMM or inkjet process. It is worth mentioning that, in this embodiment, since the third light-emitting layer 164 is continuously distributed in the second sub-pixel region 100b and the third sub-pixel region 100c, the second sub-pixel region 100b and the third sub-pixel region 100c The distance between them can be reduced, so that compared with the display panel including the pixel structure of the prior art in which the RGB light-emitting layers are arranged side by side, the display panel including the pixel structure 10 can increase the resolution or aperture ratio under the same panel size.

In addition, in this embodiment, the first light emitting layer 160 is a green light emitting layer, the second light emitting layer 162 is a red light emitting layer, and the third light emitting layer 164 is a blue light emitting layer. That is to say, in this embodiment, the first luminescent layer 160 includes a green luminescent material, the second luminescent layer 162 includes a red luminescent material, and the third luminescent layer 164 includes a blue luminescent material.

The electron transport layer 170 and the electron injection layer 180 are sequentially disposed on the first light emitting layer 160 , the second light emitting layer 162 and the third light emitting layer 164 . In detail, in this embodiment, the electron injection layer 170 and the electron transport layer 180 are located in the first sub-pixel region 100a, the second sub-pixel region 100b and the third sub-pixel region 100c. In addition, the forming method of the electron transport layer 170 and the electron injection layer 180 includes, for example, performing an evaporation process or an inkjet process. The material of the electron transport layer 170 includes, for example, oxazole derivatives and their dendrimers, metal chelates, azole compounds, diazepine derivatives, silicon-containing heterocyclic compounds, or other suitable materials. The material of the electron injection layer 180 includes, for example, lithium oxide, lithium boron oxide, potassium silicon oxide, cesium carbonate, sodium acetate, lithium fluoride alkali, or other suitable materials. It is worth mentioning that in this embodiment, the pixel structure 10 includes the electron transport layer 170 and the electron injection layer 180 , but the present invention is not limited thereto. In other embodiments, the pixel structure 10 may only include the electron transport layer 170 or the electron injection layer 180 , or the pixel structure 10 may not include the electron transport layer 170 and the electron injection layer 180 . That is, the configuration of the electron transport layer 170 and the electron injection layer 180 is optional.

The second electrode layer 190 is disposed on the first electrode layer 120 . In detail, in this embodiment, the second electrode layer 190 is located in the first sub-pixel region 100a, the second sub-pixel region 100b and the third sub-pixel region 100c. In this embodiment, the material of the second electrode layer 190 includes, for example, a transparent metal oxide conductive material, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium zinc oxide or other suitable oxides; metals; or stacked layers of at least two of the above listed. That is to say, in this embodiment, the second electrode layer 190 is a transparent electrode layer. However, the present invention is not limited thereto. In other implementation manners, the second electrode layer 190 may also be a transflective semi-reflective electrode.

In addition, in this embodiment, the first electrode layer 120 serves as an anode, and the second electrode layer 190 serves as a cathode. However, it must be noted that in terms of design requirements, the first electrode layer 120 may also serve as a cathode, while the second electrode layer 190 may serve as an anode. Further, the pixel structure 10 drives the first light emitting layer 160 , the second light emitting layer 162 and the third light emitting layer 164 to emit light through generating a voltage difference between the first electrode layer 120 and the second electrode layer 190 .

It is worth mentioning that, in this embodiment, between the first electrode layer 120 and the second electrode layer 190 in the first sub-pixel region 100a, the first electrode layer 120 and the second electrode layer 190 in the second sub-pixel region 100b A micro cavity (micro cavity) can be formed between the electrode layers 190 and between the first electrode layer 120 and the second electrode layer 190 of the third sub-pixel region 100c, so that the first light emitting layer 160 and the second light emitting layer The first color light IA, the second color light IB and the third color light IC respectively emitted by the layer 162 and the third light-emitting layer 164 can generate a micro-resonant cavity effect in the corresponding micro-resonant cavity, thereby respectively emitting from the first sub-pixel region 100a , the second sub-pixel region 100b and the third sub-pixel region 100c, so that the first sub-pixel region 100a, the second sub-pixel region 100b and the third sub-pixel region 100c respectively display light of different colors. That is to say, in this embodiment, the third color light IC emitted by the third light-emitting layer 164 located in the second sub-pixel region 100b and the third sub-pixel region 100c will only be emitted from the third sub-pixel region 100c. Specifically, in this embodiment, the first color light IA is green light, the second color light IB is red light, and the third color light IC is blue light.

Furthermore, it is found through simulated light emission experiments that the pixel structure 10 of the present invention can achieve device performance equivalent to that of the prior art pixel structure. FIG. 2 is a graph showing the relationship between the wavelength and the intensity of red light and green light emitted by the pixel structure of FIG. 1 and the prior art pixel structure. In detail, the prior art pixel structure used in the simulation experiment is the prior art pixel structure in which the RGB light emitting layers are arranged in parallel. It can be seen from FIG. 2 that, compared with the pixel structure in the prior art, the pixel structure 10 of the present invention can emit red light with a similar color performance.

On the other hand, in order to meet the above-mentioned resonant cavity effect in the prior art pixel structure in which the RGB light-emitting layers are arranged side by side, five FMMs must be used, of which, in addition to the three FMMs used to manufacture the RGB light-emitting layers, two FMMs are It is used to manufacture hole transport layers with different thicknesses corresponding to the R light-emitting layer and the G light-emitting layer, so as to meet the different optical thicknesses of various colors of light. As mentioned above, anyone skilled in the art can understand that the pixel structure 10 of the present invention includes the hole transport layer 150 (ie thickened layer) and is located in the second sub-pixel region 100b and the third sub-pixel region 100c and The third light-emitting layer 164 overlapping the second light-emitting layer 162 in the second sub-pixel region 100b can make the first sub-pixel region 100a, the second sub-pixel region 100b and the third sub-pixel region 100c satisfy the first color at the same time. Individual optical thicknesses of the wavelengths of the light IA, the second color light IB and the third color light IC. In this way, as mentioned above, the pixel structure 10 of the present invention can be fabricated using only four FMMs, of which three FMMs are used to fabricate the first light-emitting layer 160, the second light-emitting layer 162 and the third light-emitting layer 164 , and the remaining one FMM is used to manufacture the hole transport layer 150 . Therefore, compared with the prior art pixel structure in which RGB light-emitting layers are arranged side by side, the pixel structure 10 of the present invention can reduce the number of times of using FMM, thereby reducing production cost and process difficulty.

Based on the first embodiment, it can be seen that through the third light emitting layer 164 located in the second sub-pixel region 100b and the third sub-pixel region 100c, the third light-emitting layer 164 and the second light-emitting layer 162 are located in the second sub-pixel region 100b. Overlapping, the hole transport layer 150 (that is, the thickened layer) is disposed between the first light-emitting layer 160 and the second light-emitting layer 162 and the first electrode layer 120, and the hole transport layer 150 (that is, the thickened layer) is a single structure layer and the hole transport layer 150 (that is, the thickening layer) is only located in the first sub-pixel region 100a and the second sub-pixel region 100b, so that the pixel structure 10 can reduce the number of times of FMM use while maintaining good device performance , thereby reducing production cost and process difficulty and improving applicability.

In addition, although in the first embodiment, the thickened layer is realized by the hole transport layer 150 , the present disclosure is not limited thereto. Hereinafter, other implementation modes will be described with reference to FIG. 3 . It must be noted here that the following embodiments use the symbols and parts of the components of the previous embodiments, wherein the same or similar symbols are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of omitted parts, reference may be made to the foregoing implementation manners, and the following implementation manners will not be repeated.

FIG. 3 is a schematic cross-sectional view of a pixel structure according to a second embodiment of the present invention. Referring to FIG. 3 and FIG. 1 , in the pixel structure 20 , the thickened layer is realized by the third electrode layer 250 , and in the pixel structure 10 , the thickened layer is realized by the hole transport layer 150 . Hereinafter, the differences between the two will be described.

Please refer to FIG. 3 , the third electrode layer 250 is arranged between the first light emitting layer 160 and the second light emitting layer 162 and the first electrode layer 120 to meet the requirements of the light emitted by the first light emitting layer 160 and the second light emitting layer 162 . optical thickness. From another point of view, the first light emitting layer 160 and the second light emitting layer 162 are disposed on the side of the third electrode layer 250 opposite to the first electrode layer 120 .

In detail, in this embodiment, the third electrode layer 250 includes an electrode pattern 250a and an electrode pattern 250b separated from each other, wherein the electrode pattern 250a is located in the first sub-pixel region 100a and covers the electrode pattern in the first electrode layer 120 120 a , the electrode pattern 250 b is located in the second sub-pixel region 100 b and covers the electrode pattern 120 b in the first electrode layer 120 . That is to say, in this embodiment, the third electrode layer 250 is a patterned electrode layer, and is only located in the first sub-pixel region 100a and the second sub-pixel region 100b. From another point of view, in this embodiment, the third electrode layer 250 is a single structural layer formed in one process. It is worth mentioning that, in this embodiment, since the third electrode layer 250 is a single structural layer, the electrode pattern 250a and the electrode pattern 250b have substantially the same thickness. That is to say, the thickness of the third electrode layer 250 in the first sub-pixel region 100 a is substantially the same as the thickness of the third electrode layer 250 in the second sub-pixel region 100 b.

In this embodiment, the third electrode layer 250 can be formed by any method of manufacturing an electrode layer known to those skilled in the art. For example, in one embodiment, the method for forming the third electrode layer 250 includes the following steps: using a chemical vapor deposition (chemical vapor deposition, CVD) process or a physical vapor deposition (physical vapor deposition, PVD) process on the substrate 100 An electrode material layer is formed and then patterned using a lithography etching process. For another example, in one embodiment, the method for forming the third electrode layer 250 includes performing an inject printing process. In addition, in this embodiment, the material of the third electrode layer 250 may include a reflective material, such as a conductive material such as metal, alloy, metal oxide, or a stacked layer of a metal and a transparent metal oxide conductive material. The metal oxide conductive material is, for example, indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium zinc oxide or other suitable oxides.

In this embodiment, the hole injection layer 130 and the hole transport layer 140 are sequentially disposed on the third electrode layer 250 . In this embodiment, the first light emitting layer 160 , the second light emitting layer 162 and the third light emitting layer 164 are located on the hole transport layer 140 . In this way, in this embodiment, as mentioned above, since the third electrode layer 250 is a single structural layer and is only located in the first sub-pixel region 100a and the second sub-pixel region 100b, it is respectively located in the first sub-pixel region 100a and the second sub-pixel region 100b. The first light-emitting layer 160 and the second light-emitting layer 162 in the pixel region 100a and the second sub-pixel region 100b are located at the same level. On the other hand, also as mentioned above, since the thickness of the third electrode layer 250 in the first sub-pixel region 100a is substantially the same as the thickness of the third electrode layer 250 in the second sub-pixel region 100b, it is located in the third electrode The first light-emitting layer 160 and the second light-emitting layer 162 above the layer 250 are located on the same horizontal plane. That is to say, in this embodiment, the minimum distance between the first light emitting layer 150 and the first electrode layer 120 is substantially the same as the minimum distance between the second light emitting layer 152 and the first electrode layer 120 .

Based on the first embodiment, in this embodiment, the pixel structure 20 drives the first light emitting layer 160, the second light emitting layer 162 and the third light emitting layer 160 through the voltage difference generated between the first electrode layer 120 and the second electrode layer 190 The light emitting layer 164 emits light. It is worth mentioning that, in this embodiment, between the first electrode layer 120 and the second electrode layer 190 in the first sub-pixel region 100a, the first electrode layer 120 and the second electrode layer 190 in the second sub-pixel region 100b Between the electrode layers 190, between the first electrode layer 120 and the second electrode layer 190 of the third sub-pixel region 100c, a micro-resonant cavity can be formed respectively, so that the first light-emitting layer 160, the second light-emitting layer 162 and the second light-emitting layer The first color light IA, the second color light IB and the third color light IC respectively emitted by the three light-emitting layers 164 can generate a micro-resonant cavity effect in the corresponding micro-resonant cavity, thereby respectively emitting from the first sub-pixel region 100a, the second sub-pixel region 100a, The pixel area 100b and the third sub-pixel area 100c emit light so that the first sub-pixel area 100a, the second sub-pixel area 100b and the third sub-pixel area 100c respectively display light of different colors. That is to say, in this embodiment, the third color light IC emitted by the third light-emitting layer 164 located in the second sub-pixel region 100b and the third sub-pixel region 100c will only be emitted from the third sub-pixel region 100c. Specifically, in this embodiment, the first color light IA is green light, the second color light IB is red light, and the third color light IC is blue light.

Further, it is found through simulated lighting experiments that the pixel structure 20 of the present invention can achieve device performance equivalent to that of the prior art pixel structure. FIG. 4 is a diagram showing the relationship between the wavelength and the intensity of red light and green light emitted by the pixel structure of FIG. 3 and the prior art pixel structure. In detail, the prior art pixel structure used in the simulation experiment is the prior art pixel structure in which the RGB light emitting layers are arranged in parallel. It can be seen from FIG. 4 that, compared with the pixel structure in the prior art, the pixel structure 20 of the present invention can emit red light with a similar color performance.

On the other hand, as mentioned above, anyone skilled in the art can understand that the pixel structure 20 of the present invention includes the third electrode layer 250 (ie thickened layer) and the second sub-pixel region 100b and the third sub-pixel The third light-emitting layer 164 in the region 100c and overlapping the second light-emitting layer 162 in the second sub-pixel region 100b can make the first sub-pixel region 100a, the second sub-pixel region 100b and the third sub-pixel region 100c simultaneously The individual optical thicknesses of the wavelengths of the first color light IA, the second color light IB and the third color light IC are satisfied. In this way, as mentioned above, the pixel structure 20 of the present invention only needs to use three FMMs for manufacturing the first light-emitting layer 160, the second light-emitting layer 162 and the third light-emitting layer 164 to complete the fabrication. Compared with the prior art pixel structure in which the RGB light-emitting layers are arranged side by side, the pixel structure 20 of the present invention can reduce the number of times of using FMM, thereby reducing the production cost and process difficulty.

Based on the second embodiment and the first embodiment, it can be seen that through the third light emitting layer 164 located in the second sub-pixel region 100b and the third sub-pixel region 100c, the third light emitting layer 164 and the second light emitting layer 162 are located in the second sub-pixel region 100c. Overlapping in the pixel area 100b, the third electrode layer 250 (that is, the thickening layer) is disposed between the first light emitting layer 160 and the second light emitting layer 162 and the first electrode layer 120, and the third electrode layer 250 (that is, the thickening layer) ) is a single structural layer and the third electrode layer 250 (ie thickened layer) is only located in the first sub-pixel region 100a and the second sub-pixel region 100b, so that the pixel structure 20 can maintain good device performance Reduce the number of times of FMM use, thereby reducing production costs and process difficulty and improving applicability.

In addition, although in the first embodiment and the second embodiment, the first light emitting layer 160 and the second light emitting layer 162 are arranged in parallel, and the second light emitting layer 162 and the third light emitting layer 164 are arranged in an overlapping manner, But the present disclosure is not limited thereto. Hereinafter, other implementation forms will be described with reference to FIG. 5 and FIG. 7 . It must be noted here that the following embodiments use the symbols and parts of the components of the previous embodiments, wherein the same or similar symbols are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of omitted parts, reference may be made to the foregoing implementation manners, and the following implementation manners will not be repeated.

FIG. 5 is a schematic cross-sectional view of a pixel structure according to a third embodiment of the present invention. Referring to FIG. 5 and FIG. 1 , the pixel structure 30 of this embodiment is similar to the pixel structure 10 in FIG. 1 , the difference mainly lies in the arrangement of the light emitting layer, so the differences between the two will be described below.

Referring to FIG. 5 , the first light emitting layer 360 , the second light emitting layer 362 and the third light emitting layer 364 are disposed between the first electrode layer 120 and the second electrode layer 190 . In detail, in this embodiment, the first light-emitting layer 360 is located in the first sub-pixel region 100a, the second light-emitting layer 362 is located in the second sub-pixel region 100b, and the third light-emitting layer 364 is located in the second sub-pixel region 100b and in the third sub-pixel region 100c, and the third light-emitting layer 364 overlaps with the second light-emitting layer 362 in the second sub-pixel region 100b. More specifically, in this embodiment, the second light-emitting layer 362 is further located in the first sub-pixel region 100a, and the second light-emitting layer 362 and the first light-emitting layer 360 overlap in the first sub-pixel region 100a; and The third light-emitting layer 364 is further located in the first sub-pixel region 100a, and the third light-emitting layer 364 and the second light-emitting layer 362 overlap in the first sub-pixel region 100a, and the third light-emitting layer 364 and the first light-emitting layer 360 overlap in the first sub-pixel region 100a. That is to say, in this embodiment, the first light-emitting layer 360 , the second light-emitting layer 362 and the third light-emitting layer 364 are all arranged in an overlapping manner.

In this embodiment, the second light emitting layer 362 is a continuous structure layer, which is continuously distributed in the first sub-pixel region 100a and the second sub-pixel region 100b. Furthermore, in this embodiment, in order to improve the luminous efficiency of the pixel structure 30 and satisfy the optical thickness of the first light-emitting layer 360, the second light-emitting layer 362 is preferably only distributed in the first sub-pixel region 100a and the second sub-pixel in area 100b.

In this embodiment, the first light-emitting layer 360 and the second light-emitting layer 362 are formed by, for example, respectively using an evaporation process and a corresponding FMM or inkjet process. In addition, in this embodiment, the third light-emitting layer 364 is a continuous structural layer, which is continuously distributed in the first sub-pixel region 100a, the second sub-pixel region 100b and the third sub-pixel region 100c, so the third light-emitting layer 364 It does not need to be formed using FMM. In detail, in this embodiment, the third light-emitting layer 364 is formed by, for example, an evaporation process combined with a general metal mask or an inkjet process.

It is worth mentioning that, in this embodiment, since the second light-emitting layer 362 is continuously distributed in the first sub-pixel region 100a and the second sub-pixel region 100b, and the third light-emitting layer 364 is continuously distributed in the first sub-pixel region 100a, the second sub-pixel area 100b, and the third sub-pixel area 100c, therefore, the distance between the first sub-pixel area 100a, the second sub-pixel area 100b, and the third sub-pixel area 100c can be reduced, so that it is compatible with RGB Compared with the display panel with the pixel structure in the prior art in which the light-emitting layers are arranged side by side, the display panel including the pixel structure 30 can increase the resolution or aperture ratio under the same panel size.

In addition, in this embodiment, the first light emitting layer 360 is a red light emitting layer, the second light emitting layer 362 is a green light emitting layer, and the third light emitting layer 364 is a blue light emitting layer. That is to say, in this embodiment, the first luminescent layer 360 includes red luminescent material, the second luminescent layer 362 includes green luminescent material, and the third luminescent layer 364 includes blue luminescent material. From another point of view, in this embodiment, the third light emitting layer 364 is a blue common layer (blue common layer, BCL).

In addition, in this embodiment, the hole transport layer 150 is disposed between the first light-emitting layer 360 and the second light-emitting layer 362 and the first electrode layer 120, so as to meet the requirements of the first light-emitting layer 360 and the second light-emitting layer 362. The optical thickness of the emitted light. In detail, in this embodiment, the hole transport layer 150 is disposed between the first light emitting layer 360 and the second light emitting layer 362 and the hole transport layer 140 .

Based on the first embodiment, in this embodiment, the pixel structure 30 drives the first light emitting layer 360, the second light emitting layer 362 and the third light emitting layer by generating a voltage difference between the first electrode layer 120 and the second electrode layer 190. Layer 364 emits light. It is worth mentioning that, in this embodiment, between the first electrode layer 120 and the second electrode layer 190 in the first sub-pixel region 100a, the first electrode layer 120 and the second electrode layer 190 in the second sub-pixel region 100b Between the electrode layers 190, and between the first electrode layer 120 and the second electrode layer 190 of the third sub-pixel region 100c, micro-resonance cavities can be formed respectively, so that the first light-emitting layer 360, the second light-emitting layer 362 and the second light-emitting layer The first color light ID, the second color light IE and the third color light IF respectively emitted by the three light-emitting layers 364 can generate a micro-resonant cavity effect in the corresponding micro-resonant cavity, thereby respectively emitting from the first sub-pixel region 100a, the second sub-pixel region 100a, The pixel area 100b and the third sub-pixel area 100c emit light so that the first sub-pixel area 100a, the second sub-pixel area 100b and the third sub-pixel area 100c respectively display light of different colors. That is to say, in this embodiment, the second color light IE emitted by the second light-emitting layer 362 located in the first sub-pixel region 100a and the second sub-pixel region 100b will only be emitted from the second sub-pixel region 100b, and The third color light IF emitted by the third light emitting layer 364 located in the first sub-pixel area 100a, the second sub-pixel area 100b and the third sub-pixel area 100c will only be emitted from the third sub-pixel area 100c. Specifically, in this embodiment, the first color light ID is red light, the second color light IE is green light, and the third color light IF is blue light.

Further, it is found through simulated lighting experiments that the pixel structure 30 of the present invention can achieve device performance equivalent to that of the prior art pixel structure. FIG. 6 is a graph showing the relationship between the wavelength and the intensity of red light and green light emitted by the pixel structure of FIG. 5 and the prior art pixel structure. In detail, the prior art pixel structure used in the simulation experiment is the prior art pixel structure in which the RGB light emitting layers are arranged in parallel. It can be seen from FIG. 6 that, compared with the prior art pixel structure, the pixel structure 30 of the present invention can emit green light and red light with similar color performance.

On the other hand, as mentioned above, any person skilled in the art can understand that the pixel structure 30 of the present invention includes the hole transport layer 150 (that is, the thickened layer), and is located in the first sub-pixel area 100a and the second sub-pixel area. 100b and the second light-emitting layer 362 overlapping the first light-emitting layer 360 in the first sub-pixel region 100a, and the first sub-pixel region 100a, the second sub-pixel region 100b and the third sub-pixel region 100c and The third light-emitting layer 364 covering the first light-emitting layer 360 and the second light-emitting layer 362 can make the first sub-pixel region 100a, the second sub-pixel region 100b and the third sub-pixel region 100c simultaneously satisfy the first color light ID, the second The respective optical thicknesses of the wavelengths of the dichroic light IE and the tertiary color light IF. In this way, as mentioned above, the pixel structure 30 of the present invention can be fabricated using only three FMMs, of which two FMMs are used to manufacture the first light-emitting layer 360 and the second light-emitting layer 362, and the remaining one FMM Used to manufacture the hole transport layer 150. Therefore, compared with the prior art pixel structure in which RGB light-emitting layers are arranged side by side, the pixel structure 30 of the present invention can reduce the number of times of using FMM, thereby reducing production cost and process difficulty.

Based on the third embodiment and the first embodiment, it can be seen that the third light-emitting layer 364 is located in the first sub-pixel region 100a, the second sub-pixel region 100b and the third sub-pixel region 100c and covers the first light-emitting layer 360 and the second The light-emitting layer 362, the second light-emitting layer 362 is located in the first sub-pixel region 100a and the second sub-pixel region 100b and covers the first light-emitting layer 360, the hole transport layer 150 (that is, the thickening layer) is arranged on the first light-emitting layer 360 And between the second light-emitting layer 162 and the first electrode layer 230, the hole transport layer 150 (ie thickened layer) is a single structural layer and the hole transport layer 150 (ie thickened layer) is only located in the first sub-pixel area 100a and the second sub-pixel region 100b, thereby enabling the pixel structure 30 to reduce the number of FMM uses while maintaining good device performance, thereby reducing production costs and process difficulties and improving applicability.

In addition, although in the third embodiment, the thickened layer is realized by the hole transport layer 150 , the present disclosure is not limited thereto. Hereinafter, other implementation modes will be described with reference to FIG. 7 . It must be noted here that the following embodiments use the symbols and parts of the components of the previous embodiments, wherein the same or similar symbols are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of omitted parts, reference may be made to the foregoing implementation manners, and the following implementation manners will not be repeated.

FIG. 7 is a schematic cross-sectional view of a pixel structure according to a fourth embodiment of the present invention. Please refer to FIG. 7 and FIG. 5 , in the pixel structure 40 , the thickened layer is realized by the third electrode layer 450 , and in the pixel structure 30 , the thickened layer is realized by the hole transport layer 150 . Hereinafter, the differences between the two will be described.

Please refer to FIG. 7 , the third electrode layer 450 is arranged between the first light emitting layer 360 and the second light emitting layer 362 and the first electrode layer 120 to meet the requirements of the light emitted by the first light emitting layer 360 and the second light emitting layer 362 . optical thickness. From another point of view, the first light emitting layer 360 and the second light emitting layer 362 are disposed on the side of the third electrode layer 450 opposite to the first electrode layer 120 .

In detail, in this embodiment, the third electrode layer 450 includes an electrode pattern 450a and an electrode pattern 450b separated from each other, wherein the electrode pattern 450a is located in the first sub-pixel region 100a and covers the electrode pattern in the first electrode layer 120 120 a , the electrode pattern 450 b is located in the second sub-pixel region 100 b and covers the electrode pattern 120 b in the first electrode layer 120 . That is to say, in this embodiment, the third electrode layer 450 is a patterned electrode layer, and is only located in the first sub-pixel region 100a and the second sub-pixel region 100b. From another point of view, in this embodiment, the third electrode layer 450 is a single structural layer formed in one process. It is worth mentioning that, in this embodiment, since the third electrode layer 450 is a single structural layer, the electrode pattern 450a and the electrode pattern 450b have substantially the same thickness. That is to say, the thickness of the third electrode layer 450 in the first sub-pixel region 100a is substantially the same as the thickness of the third electrode layer 450 in the second sub-pixel region 100b.

In this embodiment, the third electrode layer 450 can be formed by any method of manufacturing an electrode layer known to those skilled in the art. For example, in one embodiment, the method for forming the third electrode layer 450 includes the following steps: using a chemical vapor deposition (chemical vapor deposition, CVD) process or a physical vapor deposition (physical vapor deposition, PVD) process on the substrate 100 An electrode material layer is formed and then patterned using a lithography etching process. For another example, in one embodiment, the method for forming the third electrode layer 450 includes performing an inject printing process. In addition, in this embodiment, the material of the third electrode layer 450 may include a reflective material, such as a conductive material such as metal, alloy, metal oxide, or a stacked layer of a metal and a transparent metal oxide conductive material. The metal oxide conductive material is, for example, indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium zinc oxide or other suitable oxides.

In this embodiment, the hole injection layer 130 and the hole transport layer 140 are sequentially disposed on the third electrode layer 450 . In addition, in this embodiment, the first light emitting layer 360 , the second light emitting layer 362 and the third light emitting layer 364 are located on the hole transport layer 140 .

Based on the first embodiment, it can be seen that in this embodiment, the pixel structure 40 drives the first light emitting layer 360, the second light emitting layer 362 and the third light emitting layer by generating a voltage difference between the first electrode layer 120 and the second electrode layer 190. Layer 364 emits light. It is worth mentioning that, in this embodiment, between the first electrode layer 120 and the second electrode layer 190 in the first sub-pixel region 100a, the first electrode layer 120 and the second electrode layer 190 in the second sub-pixel region 100b Between the electrode layers 190, and between the first electrode layer 120 and the second electrode layer 190 of the third sub-pixel region 100c, micro-resonance cavities can be formed respectively, so that the first light-emitting layer 360, the second light-emitting layer 362 and the second light-emitting layer The first color light ID, the second color light IE and the third color light IF respectively emitted by the three light-emitting layers 364 can generate a micro-resonant cavity effect in the corresponding micro-resonant cavity, thereby respectively emitting from the first sub-pixel region 100a, the second sub-pixel region 100a, The pixel area 100b and the third sub-pixel area 100c emit light so that the first sub-pixel area 100a, the second sub-pixel area 100b and the third sub-pixel area 100c respectively display light of different colors. That is to say, in this embodiment, the second color light IE emitted by the second light-emitting layer 362 located in the first sub-pixel region 100a and the second sub-pixel region 100b will only be emitted from the second sub-pixel region 100b, and The third color light IF emitted by the third light emitting layer 364 located in the first sub-pixel area 100a, the second sub-pixel area 100b and the third sub-pixel area 100c will only be emitted from the third sub-pixel area 100c. Specifically, in this embodiment, the first color light ID is red light, the second color light IE is green light, and the third color light IF is blue light.

Further, it is found through simulated lighting experiments that the pixel structure 40 of the present invention can achieve device performance equivalent to that of the prior art pixel structure. FIG. 8 is a graph showing the relationship between the wavelength and the intensity of red light and green light emitted by the pixel structure of FIG. 7 and the prior art pixel structure. In detail, the prior art pixel structure used in the simulation experiment is the prior art pixel structure in which the RGB light emitting layers are arranged in parallel. It can be seen from FIG. 8 that, compared with the prior art pixel structure, the pixel structure 40 of the present invention can emit green light and red light with similar color performance.

On the other hand, as mentioned above, any person skilled in the art can understand that the pixel structure 40 of the present invention includes the third electrode layer 450 (that is, the thickened layer), which is located in the first sub-pixel area 100a and the second sub-pixel area. 100b and the second light-emitting layer 362 overlapping the first light-emitting layer 360 in the first sub-pixel region 100a, and the first sub-pixel region 100a, the second sub-pixel region 100b and the third sub-pixel region 100c and The third light-emitting layer 364 covering the first light-emitting layer 360 and the second light-emitting layer 362 can make the first sub-pixel region 100a, the second sub-pixel region 100b and the third sub-pixel region 100c simultaneously satisfy the first color light ID, the second The respective optical thicknesses of the wavelengths of the dichroic light IE and the tertiary color light IF. In this way, as mentioned above, the pixel structure 40 of the present invention only needs to use two FMMs for manufacturing the first light-emitting layer 360 and the second light-emitting layer 362 to complete the fabrication. Therefore, compared with the prior art pixel structure in which RGB light-emitting layers are arranged side by side, the pixel structure 40 of the present invention can reduce the number of times of using FMM, thereby reducing production cost and process difficulty.

Based on the fourth embodiment, the third embodiment and the first embodiment, it can be seen that the third light emitting layer 364 is located in the first sub-pixel region 100a, the second sub-pixel region 100b and the third sub-pixel region 100c and covers the first light emitting layer 364. Layer 360 and the second light-emitting layer 362, the second light-emitting layer 362 is located in the first sub-pixel region 100a and the second sub-pixel region 100b and covers the first light-emitting layer 360, the third electrode layer 450 (that is, the thickening layer) is disposed on Between the first light-emitting layer 360 and the second light-emitting layer 362 and the first electrode layer 230, the third electrode layer 450 (that is, the thickened layer) is a single structural layer, and the third electrode layer 450 (that is, the thickened layer) is only located In the first sub-pixel region 100a and the second sub-pixel region 100b, the pixel structure 40 can reduce the number of times of FMM use while maintaining good device performance, thereby reducing production cost and process difficulty and improving applicability.

To sum up, in the pixel structure of the present invention, since the third light emitting layer is located in the second sub-pixel region and the third sub-pixel region, the third light-emitting layer and the second light-emitting layer overlap in the second sub-pixel region , the first light-emitting layer and the second light-emitting layer are arranged on the side of the thickened layer opposite to the first electrode layer, the thickened layer is a single structural layer and the thickened layer is only located in the first sub-pixel area and the second sub-pixel area In this way, the pixel structure can reduce the number of times of FMM use while maintaining good device performance, thereby reducing production cost and process difficulty and improving applicability.

Certainly, the present invention also can have other multiple embodiments, without departing from the spirit and essence of the present invention, those skilled in the art can make various corresponding changes and deformations according to the present invention, but these corresponding Changes and deformations should all belong to the protection scope of the appended claims of the present invention.

Claims (9)

1. a kind of dot structure, it is characterised in that including：

Substrate, including the first subpixel area, the second subpixel area and the 3rd subpixel area；

First electrode layer, configuration on the substrate, and positioned at first subpixel area, second subpixel area and this In three subpixel areas；

The second electrode lay, configure in the first electrode layer, and positioned at first subpixel area, second subpixel area with And the 3rd in subpixel area；

First luminescent layer, the second luminescent layer and the 3rd luminescent layer, are configured between the first electrode layer and the second electrode lay, its In first luminescent layer be located in first subpixel area, second luminescent layer is located in second subpixel area, and this Three luminescent layers are located in second subpixel area and the 3rd subpixel area, and the 3rd luminescent layer and second luminescent layer Overlapped in second subpixel area；And

Thickening layer, wherein first luminescent layer and second luminescent layer are configured at the thickening layer relative to the one of the first electrode layer Side, and the thickening layer are single structure layer and are only located in first subpixel area and second subpixel area.

2. dot structure as claimed in claim 1, it is characterised in that thickness of the thickening layer in first subpixel area It is identical with thickness of the thickening layer in second subpixel area.

3. dot structure as claimed in claim 1, it is characterised in that the thickening layer is electric hole transport layer or the 3rd electrode layer.

4. dot structure as claimed in claim 1, it is characterised in that first luminescent layer and second luminescent layer are located at same Aspect.

5. dot structure as claimed in claim 4, it is characterised in that between first luminescent layer and the first electrode layer most Small spacing is identical with the minimum spacing between the first electrode layer with second luminescent layer.

6. dot structure as claimed in claim 4, it is characterised in that the 3rd luminescent layer is only located at second subpixel area And the 3rd in subpixel area.

7. dot structure as claimed in claim 4, it is characterised in that first luminescent layer is green light emitting layer, second hair Photosphere is red light emitting layer and the 3rd luminescent layer is blue light-emitting layer.

8. dot structure as claimed in claim 1, it is characterised in that：

Second luminescent layer is more located in first subpixel area, and second luminescent layer and first luminescent layer in this first Overlapped in subpixel area；And

3rd luminescent layer is more located in first subpixel area, and the 3rd luminescent layer and second luminescent layer more in this Overlapped in one subpixel area, the 3rd luminescent layer overlaps with first luminescent layer in first subpixel area.

9. dot structure as claimed in claim 8, it is characterised in that first luminescent layer is red light emitting layer, second hair Photosphere is green light emitting layer and the 3rd luminescent layer is blue light-emitting layer.