CN109742105B

CN109742105B - OLED substrate, preparation method thereof and OLED display device

Info

Publication number: CN109742105B
Application number: CN201910004245.4A
Authority: CN
Inventors: 王琳琳; 闫光
Original assignee: BOE Technology Group Co Ltd
Current assignee: BOE Technology Group Co Ltd
Priority date: 2019-01-03
Filing date: 2019-01-03
Publication date: 2020-12-04
Anticipated expiration: 2039-01-03
Also published as: CN109742105A

Abstract

The embodiment of the invention provides an OLED substrate, a preparation method thereof and an OLED display device, relates to the technical field of display, and is used for improving the resolution of the OLED display device. The first sub-pixel in the OLED substrate comprises a first electrode, a first light-emitting pattern, an auxiliary electrode and a second electrode which are sequentially stacked; the second sub-pixel comprises a first electrode, an auxiliary electrode, a third light-emitting pattern, a second electrode, a first light-emitting pattern and a second light-emitting pattern, wherein the first electrode, the auxiliary electrode, the third light-emitting pattern and the second electrode are sequentially stacked; electrons and holes recombine at the second light emitting pattern; the third sub-pixel comprises a first electrode, a second light-emitting pattern, a third light-emitting pattern and a second electrode which are sequentially stacked; electrons and holes recombine at the third light emitting pattern; the first light-emitting pattern and the auxiliary electrode both extend from the first sub-pixel to the second sub-pixel; the second light emitting pattern and the third light emitting pattern each extend from the second subpixel to the third subpixel.

Description

OLED substrate, preparation method thereof and OLED display device

Technical Field

The invention relates to the technical field of display, in particular to an OLED substrate, a preparation method thereof and an OLED display device.

Background

An OLED (Organic Light Emitting Diode) display device has a series of advantages of self-luminescence, fast response speed, high brightness, full viewing angle, flexible display, and the like, and thus becomes a display device with high competitiveness and good development prospect at present.

The OLED display device includes an anode, a cathode, and a light Emitting Layer (EML), which emits light when a voltage is applied to the anode and the cathode. At present, an OLED display device realizes full-Color display in two ways, one is that a light emitting layer emits white light, and three primary Color lights are obtained by setting a Color Filter (CF for short), and in this case, the light emitting layer can be prepared by using an Open Mask. The other is that the light emitting layer includes a first light emitting pattern emitting red light, a second light emitting pattern emitting green light, and a third light emitting pattern emitting blue light, in which case the first light emitting pattern, the second light emitting pattern, and the third light emitting pattern disposed Side By Side (Side By Side) are respectively evaporated By using FMM (Fine Metal Mask). However, when the FMM is used to deposit the light-emitting pattern, the size of the light-emitting pattern is limited by the size of the FMM opening region, and due to process limitations, the size of the FMM opening region cannot be made very small, which results in that the size of the light-emitting pattern cannot be made very small, thereby limiting the improvement of the resolution of the OLED display device.

Disclosure of Invention

The embodiment of the invention provides an OLED substrate, a preparation method thereof and an OLED display device, which are used for improving the resolution of the OLED display device.

In order to achieve the above purpose, the embodiment of the invention adopts the following technical scheme:

in a first aspect, an OLED substrate is provided, including a first subpixel, a second subpixel, and a third subpixel disposed on a backplane; the first sub-pixel comprises a first electrode, a first light-emitting pattern, an auxiliary electrode and a second electrode which are sequentially stacked; the second sub-pixel comprises a first electrode, an auxiliary electrode, a third light-emitting pattern, a second electrode, a first light-emitting pattern and a second light-emitting pattern, wherein the first electrode, the auxiliary electrode, the third light-emitting pattern and the second electrode are sequentially stacked; electrons and holes are recombined at the second light emitting pattern to cause the second light emitting pattern to emit light; the third sub-pixel comprises a first electrode, a second light-emitting pattern, a third light-emitting pattern and a second electrode which are sequentially stacked; electrons and holes are recombined at the third light emitting pattern to cause the third light emitting pattern to emit light; wherein the first light emitting pattern and the auxiliary electrode each extend from the first subpixel to the second subpixel; the second light emitting pattern and the third light emitting pattern each extend from the second sub-pixel to the third sub-pixel.

In some embodiments, the first electrode is an anode and the second electrode is a cathode; a hole transport ability of the second light emitting pattern is greater than an electron transport ability of the third light emitting pattern; or, the first electrode is a cathode, and the second electrode is an anode; an electron transport ability of the second light emitting pattern is greater than a hole transport ability of the third light emitting pattern.

In some embodiments, the first electrode is a cathode and the second electrode is an anode; or, the first electrode is an anode and the second electrode is a cathode; in a case where the first light emitting pattern is close to an anode with respect to the second light emitting pattern, a hole transport ability of the first light emitting pattern is greater than an electron transport ability of the second light emitting pattern; in a case where the first light emitting pattern is close to a cathode with respect to the second light emitting pattern, an electron transport ability of the first light emitting pattern is greater than a hole transport ability of the second light emitting pattern.

In some embodiments, an orthographic projection of the first light emission pattern on the base plate and an orthographic projection of the auxiliary electrode on the base plate overlap; and/or the orthographic projection of the second light-emitting pattern on the bottom plate and the orthographic projection of the third light-emitting pattern on the bottom plate are overlapped.

In some embodiments, in the case where the first electrode is an anode and the second electrode is a cathode, the OLED substrate further includes an electron blocking layer disposed between the second light emission pattern and the third light emission pattern; or, in the case that the first electrode is a cathode and the second electrode is an anode, the OLED substrate further includes a hole blocking layer disposed between the second light emitting pattern and the third light emitting pattern; wherein the electron blocking layer and the hole blocking layer both extend from the second subpixel to the third subpixel.

In some embodiments, in the case where the first electrode is an anode and the second electrode is a cathode, the OLED substrate further includes a first electron transport layer and/or a first electron injection layer disposed between the first light emitting pattern, the second light emitting pattern, and the auxiliary electrode, the first electron transport layer and the first electron injection layer extending from the first subpixel to the second subpixel; and/or the OLED substrate further includes a second electron transport layer and/or a second electron injection layer disposed between the third light emitting pattern and the second electrode, the second electron transport layer and the second electron injection layer extending from the second subpixel to the third subpixel; in the case that the first electrode is a cathode and the second electrode is an anode, the OLED substrate further includes a first hole transport layer and/or a first hole injection layer disposed between the first light emitting pattern, the second light emitting pattern, and the auxiliary electrode; the first hole transport layer and the first hole injection layer extend from the first subpixel to the second subpixel; and/or the OLED substrate further includes a second hole transport layer and/or a second hole injection layer disposed between the third light emitting pattern and the second electrode, the second hole injection layer and the second hole injection layer extending from the second subpixel to the third subpixel.

In some embodiments, in the case where the first electrode is an anode and the second electrode is a cathode, the OLED substrate further includes a third hole injection layer and/or a third hole transport layer disposed between the first light emitting pattern, the second light emitting pattern, and the first electrode; in a case where the first electrode is a cathode and the second electrode is an anode, the OLED substrate further includes a third electron transport layer and/or a third electron injection layer disposed between the first and second light emitting patterns and the first electrode.

In a second aspect, an OLED display device is provided, including an OLED substrate and an encapsulation layer for encapsulating the OLED substrate; the OLED substrate is the OLED substrate.

In a third aspect, a method for manufacturing an OLED substrate is provided, where the OLED substrate includes a first subpixel, a second subpixel, and a third subpixel, and the method includes: forming a plurality of first electrodes on a base plate, one of the first electrodes being located in one of the sub-pixels; forming a first light emitting pattern, a second light emitting pattern, a third light emitting pattern, and an auxiliary electrode on the first electrode; wherein the first light emitting pattern and the auxiliary electrode each extend from the first subpixel to the second subpixel; the second light emitting pattern and the third light emitting pattern both extend from the second sub-pixel to the third sub-pixel; the first light emitting pattern is adjacent to the first electrode with respect to the auxiliary electrode; the auxiliary electrode is positioned between the second light emitting pattern and the third light emitting pattern; in the second subpixel, electrons and holes are recombined at the second light emitting pattern to cause the second light emitting pattern to emit light; in the third subpixel, electrons and holes recombine at the third light emitting pattern to cause the third light emitting pattern to emit light; forming a second electrode.

In some embodiments, forming a first light emitting pattern, a second light emitting pattern, a third light emitting pattern, and an auxiliary electrode on the first electrode includes: evaporating the first light-emitting pattern and the auxiliary electrode by using a first mask plate, and evaporating the second light-emitting pattern and the third light-emitting pattern by using a second mask plate; and the size of the opening area of the first mask plate is the same as that of the opening area of the second mask plate.

Compared with the prior art, the light-emitting pattern is only manufactured in the sub-pixel area, and in the embodiment of the invention, the first light-emitting pattern extends from the first sub-pixel to the second sub-pixel, so that the size of the first light-emitting pattern is the sum of the size of the first sub-pixel, the size of the second sub-pixel and the size of the pixel defining layer between the first sub-pixel and the second sub-pixel. The second and third light emitting patterns each extend from the second sub-pixel to the third sub-pixel, and thus the size of the second and third light emitting patterns is the sum of the size of the second sub-pixel, the size of the third sub-pixel, and the size of the pixel defining layer between the second and third sub-pixels. Based on this, when the mask plate with the same size as the opening area in the prior art is used for evaporating the first light-emitting pattern, the second light-emitting pattern or the third light-emitting pattern, the size of the first light-emitting pattern in the first sub-pixel, the size of the second light-emitting pattern in the second sub-pixel and the size of the third light-emitting pattern in the third sub-pixel are all smaller than the size of the opening area of the mask plate, and compared with the prior art, the size of the light-emitting pattern in the sub-pixel area is reduced under the condition that the size of the opening area of the mask plate is not changed. Therefore, the size of the light-emitting pattern in the sub-pixel can be reduced without reducing the size of the opening area of the mask plate, namely, the size of the sub-pixel is reduced (the size of the sub-pixel is less than half of the size of the opening area of the mask plate), and under the condition that the size of the OLED substrate is not changed, compared with the prior art, the number of pixels is doubled. When the OLED substrate is applied to the OLED display device, the resolution of the OLED display device is improved due to the increase of the number of pixels, so that the resolution of the OLED display device is improved by more than two times.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.

Fig. 1 is a schematic structural diagram of an OLED substrate according to an embodiment of the present invention;

fig. 2 is a schematic structural diagram of an OLED substrate according to an embodiment of the present invention;

fig. 3 is a schematic structural diagram of an OLED substrate according to an embodiment of the present invention;

fig. 4 is a schematic structural diagram of an OLED substrate according to an embodiment of the present invention;

fig. 5 is a schematic structural diagram of an OLED substrate according to an embodiment of the present invention;

fig. 6 is a schematic structural diagram six of an OLED substrate according to an embodiment of the present invention;

fig. 7 is a schematic structural diagram of an OLED display device according to an embodiment of the present invention;

fig. 8 is a schematic flowchart of a method for manufacturing an OLED substrate according to an embodiment of the present invention;

fig. 9 is a schematic structural diagram of forming a first electrode on a base plate according to an embodiment of the present invention;

fig. 10 is a schematic structural diagram of forming a first light emitting pattern, a second light emitting pattern, a third light emitting pattern and an auxiliary electrode on a first electrode according to an embodiment of the present invention.

Reference numerals:

01-a first subpixel; 02-second subpixel; 03-a third subpixel; 1-an OLED substrate; 2-an encapsulation layer; 10-a base plate; 20-a first electrode; 30-a first light emitting pattern; 40-an auxiliary electrode; 50-a second electrode; 60-a second light emitting pattern; 70-a third light emitting pattern; 80-a pixel defining layer; 90-electron blocking layer, hole blocking layer; 100-a first electron transport layer, a first hole transport layer; 110-a third hole transport layer, a third electron transport layer; 120-second electron transport layer, second hole transport layer.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

The light emitting principle of the OLED display device is that holes of the anode and electrons of the cathode meet and combine at the light emitting layer, that is, the electrons and the holes are combined at the light emitting layer, and excess energy is released in the form of light, thereby realizing light emission. It should be understood that when an OLED display device includes multiple light emitting layers, which layer is a layer in which electrons and holes are recombined, emits light.

Some embodiments of the present invention provide an OLED substrate, as shown in fig. 1 and 2, including a first subpixel 01, a second subpixel 02, and a third subpixel 03 disposed on a backplane 10. Adjacent sub-pixels are spaced apart by a pixel defining layer 80.

In some embodiments, the base plate 10 is a substrate base plate. In other embodiments, the base plate 10 includes a substrate base plate and a thin film transistor disposed on the substrate base plate. The thin film transistor includes a source electrode, a drain electrode, an active layer, a gate electrode, and a gate insulating layer. In this case, the base plate 10 may also be referred to as an Array substrate (i.e., Array substrate).

The first subpixel 01 includes: the first electrode 20, the first light emitting pattern 30, the auxiliary electrode 40, and the second electrode 50 are sequentially stacked. Here, since the second electrode 50 is disposed on the auxiliary electrode 40, the auxiliary electrode 40 is electrically connected to the second electrode 50, and the auxiliary electrode 40 and the second electrode 50 have the same voltage.

The second subpixel 02 includes: a first electrode 20, an auxiliary electrode 40, a third light emitting pattern 70, a second electrode 50, and a first light emitting pattern 30 and a second light emitting pattern 60 disposed between the first electrode 20 and the auxiliary electrode 40, which are sequentially stacked; the electrons and holes are recombined at the second light emitting pattern 60 to make the second light emitting pattern 60 emit light.

In some embodiments, as shown in fig. 1, the first light emitting pattern 30 is adjacent to the first electrode 20 with respect to the second light emitting pattern 60. In other embodiments, as shown in fig. 2, the second light emitting pattern 60 is adjacent to the first electrode 20 with respect to the first light emitting pattern 30.

The third subpixel 03 includes: a first electrode 20, a second light emitting pattern 60, a third light emitting pattern 70, and a second electrode 50 sequentially stacked; the electrons and holes are recombined at the third light emitting pattern 70 to make the third light emitting pattern 70 emit light.

Wherein, the first light emitting pattern 30 and the auxiliary electrode 40 both extend from the first subpixel 01 to the second subpixel 02; the second and third

light emitting patterns

60 and 70 each extend from the second subpixel 02 to the third subpixel 03.

Each of the sub-pixels includes a first electrode 20 and a second electrode 50, and a voltage is applied to the first electrode 20 and the second electrode 50 so that the light emitting pattern in the sub-pixel can emit light. In order to be able to individually control the brightness of light emitted by each sub-pixel, the first electrodes 20 in the first, second and

third sub-pixels

01, 02 and 03 are independent of each other. In some embodiments, the second electrodes 50 in the first subpixel 01, the second subpixel 02, and the third subpixel 03 are independent from each other. In other embodiments, the second electrodes 50 in the first subpixel 01, the second subpixel 02, and the third subpixel 03 are connected to each other.

In the second subpixel 02, the third light emitting pattern 70 is disposed between the auxiliary electrode 40 and the second electrode 50, and since the auxiliary electrode 40 and the second electrode 50 have the same voltage, the third light emitting pattern 70 does not emit light. It should be understood by those skilled in the art that, although both the first and second

light emitting patterns

30 and 60 are disposed between the auxiliary electrode 40 and the first electrode 20 in the second subpixel 02, only the second light emitting pattern 60 emits light because electrons and holes are recombined at the second light emitting pattern 60.

In the third subpixel 03, although both the second and third

light emitting patterns

60 and 70 are disposed between the first and

second electrodes

20 and 50, only the third light emitting pattern 70 emits light because electrons and holes are recombined at the third light emitting pattern 70.

Based on the above, no limitation is imposed on how to control recombination of electrons and holes at the second light emitting pattern 60 in the second subpixel 02 and how to control recombination of electrons and holes at the third light emitting pattern 70 in the third subpixel 03, and this can be achieved by selecting materials of the first light emitting pattern 30, the second light emitting pattern 60, and the third light emitting pattern 70 and providing optical modulation layers such as an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer.

The colors of light emitted by the first, second, and third

light emitting patterns

30, 60, and 70 are not limited, and in some embodiments, the first, second, and third

light emitting patterns

30, 60, and 70 are used to emit light of three primary colors. On this basis, there is no limitation as to which color of the three primary colors the first, second, and third

light emitting patterns

30, 60, and 70 are specifically used to emit. For example, the first light emitting pattern 30 is for emitting red light, the second light emitting pattern 60 is for emitting green light, and the third light emitting pattern 70 is for emitting blue light. For another example, the first light emitting pattern 30 is for emitting blue light, the second light emitting pattern 60 is for emitting green light, and the third light emitting pattern 70 is for emitting red light.

The embodiment of the invention provides an OLED substrate which comprises a first sub-pixel 01, a second sub-pixel 02 and a third sub-pixel 03, and because a first light-emitting pattern 30 in the first sub-pixel 01 emits light, a second light-emitting pattern 60 in the second sub-pixel 02 emits light and a third light-emitting pattern 70 in the third sub-pixel 03 emits light, full-color display can be realized.

When the first, second, and third

light emitting patterns

30, 60, and 70 are prepared by an evaporation process, an evaporation process using a Mask plate (Mask) is required. The size of the opening of the mask determines the sizes of the first, second, and third

light emitting patterns

30, 60, and 70. In the related art, since only the first light emitting pattern 30 is provided in the first subpixel 01, only the second light emitting pattern 60 is provided in the second subpixel 02, and only the third light emitting pattern 70 is provided in the third subpixel 03, the size of the light emitting pattern is the same as the size of the subpixel region, and the size of the light emitting pattern in the subpixel is the same as the size of the opening region of the mask plate. If the size of the opening region of the mask for vapor deposition of the first, second, or third

light emitting patterns

30, 60, or 70 is a, the size of the first, second, or third

light emitting patterns

30, 60, or 70 is a.

Compared to the prior art, the light emitting pattern is only formed in the sub-pixel region, and in the embodiment of the present invention, the first light emitting pattern 30 extends from the first sub-pixel 01 to the second sub-pixel 02, so that the size of the first light emitting pattern 30 is the sum of the size of the first sub-pixel 01, the size of the second sub-pixel 02, and the size of the pixel defining layer 80 between the first sub-pixel 01 and the second sub-pixel 02 (referring to fig. 1, the size of the first light emitting pattern 30, the second light emitting pattern 60, or the third light emitting pattern 70 is a). Both the second and third

light emitting patterns

60 and 70 extend from the second subpixel 02 to the third subpixel 03, and thus the size of the second and third

light emitting patterns

60 and 70 is the sum of the size of the second subpixel 02, the size of the third subpixel 03, and the size of the pixel defining layer 80 between the second subpixel 02 and the third subpixel 03. Based on this, when the first light-emitting pattern 30, the second light-emitting pattern 60, or the third light-emitting pattern 70 is evaporated by using a mask having the same size as the opening region in the related art, the size of the first light-emitting pattern 30 in the first subpixel 01, the size of the second light-emitting pattern 60 in the second subpixel 02, and the size of the third light-emitting pattern 70 in the third subpixel 03 are all smaller than the size of the opening region of the mask (referring to fig. 1, the size of the opening region of the mask is a, and the size of the first light-emitting pattern 30 in the first subpixel 01, the size of the second light-emitting pattern 60 in the second subpixel 02, and the size of the third light-emitting pattern 70 in the third subpixel 03 are b). Therefore, the size of the light-emitting pattern in the sub-pixel can be reduced without reducing the size of the opening area of the mask plate, namely, the size of the sub-pixel is reduced (the size of the sub-pixel is less than half of the size of the opening area of the mask plate), and under the condition that the size of the OLED substrate is not changed, compared with the prior art, the number of pixels is doubled. When the OLED substrate is applied to the OLED display device, the resolution of the OLED display device is improved due to the increase of the number of pixels, so that the resolution of the OLED display device is improved by more than two times.

In some embodiments, the orthographic projection of the first light emitting pattern 30 on the base plate 10 and the orthographic projection of the auxiliary electrode 40 on the base plate 10 overlap. Since the orthographic projection of the first light-emitting pattern 30 on the base plate 10 is overlapped with the orthographic projection of the auxiliary electrode 40 on the base plate 10, the same mask plate can be adopted when the first light-emitting pattern 30 and the auxiliary electrode 40 are prepared, and the manufacturing cost of the OLED substrate is reduced.

In other embodiments, the orthographic projection of the second light emitting pattern 60 on the base plate 10 and the orthographic projection of the third light emitting pattern 70 on the base plate 10 overlap. Since the orthographic projection of the second light-emitting pattern 60 on the base plate 10 is overlapped with the orthographic projection of the third light-emitting pattern 70 on the base plate 10, the same mask plate can be adopted when the second light-emitting pattern 60 and the third light-emitting pattern 70 are prepared, and the manufacturing cost of the OLED substrate is reduced.

Based on the above, the OLED substrate with the smaller size of the light-emitting pattern in the sub-pixel can be prepared by adopting the two mask plates, so that the process difficulty and the cost for preparing the OLED substrate are not increased.

In some embodiments, the first electrode 20 is an anode and the second electrode 50 is a cathode. In other embodiments, the first electrode 20 is a cathode and the second electrode 50 is an anode.

The structure of the OLED substrate will be described in detail below in the case where the first electrode 20 is an anode and the second electrode 50 is a cathode.

In order to realize that the third light emitting pattern 70 emits light in the third subpixel 03, in some implementations of the present invention, the hole transport capability of the second light emitting pattern 60 is greater than the electron transport capability of the third light emitting pattern 70.

When the first electrode 20 is an anode and the second electrode 50 is a cathode, the second light emitting pattern 60 is close to the anode and the third light emitting pattern 70 is close to the cathode, and since the hole transport ability of the second light emitting pattern 60 is greater than the electron transport ability of the third light emitting pattern 70, that is, the moving speed of the holes is greater than the moving speed of the electrons, the electrons and the holes are recombined at the third light emitting pattern 70. Since the electrons and holes are recombined at the third light emitting pattern 70, the third light emitting pattern 70 emits light and the second light emitting pattern 60 does not emit light in the third subpixel 03.

On this basis, as shown in fig. 3, the OLED substrate further includes: an Electron Blocking Layer (EBL) 90 disposed between the second light emitting pattern 60 and the third light emitting pattern 70; the electron blocking layer 90 extends from the second subpixel 02 to the third subpixel 03.

Here, the electron blocking layer 90 functions to block the movement of electrons. When the first electrode 20 is an anode, the second electrode 50 is a cathode, and the electron blocking layer 90 is disposed between the second light emitting pattern 60 and the third light emitting pattern 70, electrons of the cathode cannot move to the second light emitting pattern 60 due to the electron blocking layer 90, and thus the second light emitting pattern 60 does not emit light, and the third light emitting pattern 70 is disposed at a side of the electron blocking layer 90 close to the second electrode 50, and thus electron transport of the third light emitting pattern 70 is not affected by the electron blocking layer 90, and thus the third light emitting pattern 70 normally emits light.

The size of the electron blocking layer 90 is not limited, and may be that the orthographic projection of the electron blocking layer 90 on the base plate 10 is within the orthographic projection range of the second light emitting pattern 60 and the third light emitting pattern 70 on the base plate 10; the orthographic projection of the second light emitting pattern 60 and the third light emitting pattern 70 on the substrate 10 can be within the range of the orthographic projection of the electron blocking layer 90 on the substrate 10; of course, the orthographic projection of the electron blocking layer 90 on the substrate 10 may overlap the orthographic projections of the second and third

light emitting patterns

60 and 70 on the substrate 10. Under the condition that the orthographic projection of the electron blocking layer 90 on the bottom plate 10 overlaps with the orthographic projection of the second light emitting pattern 60 and the orthographic projection of the third light emitting pattern 70 on the bottom plate 10, the second light emitting pattern 60, the third light emitting pattern 70 and the electron blocking layer 90 can be prepared by using the same mask plate, so that the manufacturing cost of the OLED substrate can be reduced.

In the embodiment of the invention, the electron blocking layer 90 is disposed between the second light emitting pattern 60 and the third light emitting pattern 70, so that only the third light emitting pattern 70 in the third sub-pixel 03 is ensured to emit light, and the purity of light emitted by the third sub-pixel 03 is improved. On this basis, since the electron blocking layer 90 extends from the second sub-pixel 02 to the third sub-pixel 03, the size of the electron blocking layer 90 in a single sub-pixel, that is, the size of the sub-pixel, can be reduced without changing the size of the opening region of the mask plate, and the number of pixels is increased by more than one time compared with the prior art without changing the size of the OLED substrate.

In order to realize that the second light emitting pattern 60 emits light in the second subpixel 02, in some implementations of the present invention, as shown in fig. 1, in the case where the first light emitting pattern 30 is close to the first electrode 20 with respect to the second light emitting pattern 60, the hole transport ability of the first light emitting pattern 30 is greater than the electron transport ability of the second light emitting pattern 60.

When the first electrode 20 is an anode and the second electrode 50 is a cathode, the first light emitting pattern 30 is close to the first electrode 20 with respect to the second light emitting pattern 60, that is, the first light emitting pattern 30 is close to the anode and the second light emitting pattern 60 is close to the cathode, and since the hole transport ability of the first light emitting pattern 30 is greater than the electron transport ability of the second light emitting pattern 60, that is, the moving speed of the holes is greater than the moving speed of the electrons, the electrons and the holes are recombined at the second light emitting pattern 60. Since the electrons and holes are recombined at the second light emitting pattern 60, the second light emitting pattern 60 emits light and the first light emitting pattern 30 does not emit light in the second subpixel 02.

In order to realize that the second light emitting pattern 60 emits light in the second subpixel 02, in other implementations of the present invention, as shown in fig. 2, in the case where the first light emitting pattern 30 is close to the second electrode 50 with respect to the second light emitting pattern 60, the electron transport ability of the first light emitting pattern 30 is greater than the hole transport ability of the second light emitting pattern 60.

When the first electrode 20 is an anode and the second electrode 50 is a cathode, the first light emitting pattern 30 is close to the second electrode 50 with respect to the second light emitting pattern 60, that is, the first light emitting pattern 30 is close to the cathode, and the second light emitting pattern 60 is close to the anode, since the electron transport ability of the first light emitting pattern 30 is greater than the hole transport ability of the second light emitting pattern 60, that is, the moving speed of the electrons is greater than the moving speed of the holes, the electrons and the holes are recombined at the second light emitting pattern 60. Since the electrons and holes are recombined at the second light emitting pattern 60, the second light emitting pattern 60 emits light and the first light emitting pattern 30 does not emit light in the second subpixel 02.

On this basis, as shown in fig. 4, the OLED substrate further includes: a first Electron Transport Layer (ETL) 100 and/or a first Electron Injection Layer (EIL) disposed between the first and second

light emitting patterns

30 and 60 and the auxiliary electrode 40, wherein the first electron transport layer 100 and the first electron injection layer extend from the first subpixel 01 to the second subpixel 02.

Note that, when the first light emitting pattern 30 is close to the first electrode 20 with respect to the second light emitting pattern 60, that is, the first electron transport layer 100 and/or the first electron injection layer is disposed between the second light emitting pattern 60 and the auxiliary electrode 40; when the second light emitting pattern 60 is adjacent to the first electrode 20 with respect to the first light emitting pattern 30, the first electron transport layer 100 and/or the first electron injection layer is disposed between the first light emitting pattern 30 and the auxiliary electrode 40.

Here, the first electron transport layer 100 and/or the first electron injection layer are disposed between the first and second

light emitting patterns

30 and 60 and the auxiliary electrode 40, and only the first electron transport layer 100 may be disposed between the first and second

light emitting patterns

30 and 60 and the auxiliary electrode 40; only the first electron injection layer may be disposed between the first and second

light emitting patterns

30 and 60 and the auxiliary electrode 40; it is of course also possible to provide the first electron transport layer 100 and the first electron injection layer between the first and second

light emitting patterns

30 and 60 and the auxiliary electrode 40, the first electron transport layer 100 and the first electron injection layer being stacked.

The sizes of the first electron transport layer 100 and the first electron injection layer are not limited, and may be such that the orthographic projection of the first electron transport layer 100 (and/or the first electron injection layer) on the base plate 10 is within the range of the orthographic projection of the auxiliary electrode 40 and the first light emitting pattern 30 on the base plate 10; it may also be that the orthographic projection of the auxiliary electrode 40 and the first light emitting pattern 30 on the base plate 10 is within the range of the orthographic projection of the first electron transport layer 100 (and/or the first electron injection layer) on the base plate 10; it is of course also possible that the orthographic projection of the first electron transport layer 100 (and/or the first electron injection layer) on the base plate 10 overlaps with the orthographic projection of the auxiliary electrode 40, the first light emitting pattern 30 on the base plate 10. In the case that the orthographic projection of the first electron transport layer 100 (and/or the first electron injection layer) on the base plate 10 overlaps with the orthographic projection of the auxiliary electrode 40 and the first light emitting pattern 30 on the base plate 10, the auxiliary electrode 40, the first light emitting pattern 30 and the first electron transport layer 100 (and/or the first electron injection layer) can be prepared by using the same mask plate, so that the manufacturing cost of the OLED substrate can be reduced.

In the embodiment of the invention, when the first electrode 20 is an anode and the second electrode 50 is a cathode, since the first electron transport layer 100 and/or the first electron injection layer are disposed between the first light emitting pattern 30, the second light emitting pattern 60 and the auxiliary electrode 40, the number of electrons transported to the first light emitting pattern 30 and the second light emitting pattern 60 is increased, so that the luminance of light emitted from the first light emitting pattern 30 in the first subpixel 01 and the luminance of light emitted from the second light emitting pattern 60 in the second subpixel 02 are increased. On the basis, the first electron transport layer 100 and/or the first electron injection layer extend from the first sub-pixel 01 to the second sub-pixel 02, so that the size of the first electron transport layer 100 and/or the first electron injection layer in a single sub-pixel can be reduced under the condition that the size of an opening area of the mask plate is not changed, namely the size of the sub-pixel is reduced, and under the condition that the size of the OLED substrate is not changed, compared with the prior art, the number of pixels is increased by more than one time.

Based on the above, as shown in fig. 5, the OLED substrate further includes: a third Hole Injection Layer (HIL) and/or a third Hole Transport Layer (HTL) 110 are disposed between the first and second

light emitting patterns

30 and 60 and the first electrode 20.

Here, a third hole injection layer and/or a third hole transport layer 110 is disposed between the first and second

light emitting patterns

30 and 60 and the first electrode 20, and may be disposed between the first and second

light emitting patterns

30 and 60 and the first electrode 20; the third hole transport layer 110 may be disposed between the first and second

light emitting patterns

30 and 60 and the first electrode 20; it is of course also possible to provide a third hole injection layer and a third hole transport layer 110 between the first light emitting pattern 30, the second light emitting pattern 60 and the first electrode 20, the third hole injection layer and the third hole transport layer being stacked.

In some embodiments, an entire layer of the third hole injection layer and/or the third hole transport layer 110 is tiled between the first light emitting pattern 30, the second light emitting pattern 60, and the first electrode 20. In other embodiments, in the case that the OLED substrate includes a third hole injection layer, the third hole injection layer includes a first sub-hole injection layer and a second sub-hole injection layer which are stacked, the first sub-hole injection layer extends from the first subpixel 01 to the second subpixel 02, and the second sub-hole injection layer extends from the second subpixel 02 to the third subpixel 03. Similarly, in the case where the OLED substrate includes a third hole transport layer, the third hole transport layer 110 includes a first sub-hole transport layer and a second sub-hole transport layer stacked, the first sub-hole transport layer extends from the first sub-pixel 01 to the second sub-pixel 02, and the second sub-hole transport layer extends from the second sub-pixel 02 to the third sub-pixel 03.

In the embodiment of the invention, when the first electrode 20 is an anode and the second electrode 50 is a cathode, since the third hole injection layer and/or the third hole transport layer 110 is disposed between the first light emitting pattern 30, the second light emitting pattern 60 and the first electrode 20, the number of holes transported to the first light emitting pattern 30 and the second light emitting pattern 60 is increased, so that the luminance of the light emitted from the first light emitting pattern 30 in the first subpixel 01 and the luminance of the light emitted from the second light emitting pattern 60 in the second subpixel 02 are further increased.

Further, as shown in fig. 6, the OLED substrate further includes: a second electron injection layer and/or a second electron transport layer 120 disposed between the third light emitting pattern 70 and the second electrode 50, the second electron injection layer and the second electron transport layer 120 extending from the second subpixel 02 to the third subpixel 03.

Here, the second electron injection layer and/or the second electron transport layer 120 is disposed between the third light emitting pattern 70 and the second electrode 50, and may be disposed between the third light emitting pattern 70 and the second electrode 50; a second electron transport layer 120 may be disposed between the third light emitting pattern 70 and the second electrode 50; it is of course also possible to provide a second electron injection layer and a second electron transport layer 120 between the third light emitting pattern 70 and the second electrode 50, the second electron injection layer and the second electron transport layer 120 being stacked.

The sizes of the second electron transport layer 120 and the second electron injection layer are not limited, and may be that the orthographic projection of the second electron transport layer 120 (and/or the second electron injection layer) on the base plate 10 is within the range of the orthographic projection of the second light emitting pattern 60 and the third light emitting pattern 70 on the base plate 10; it is also possible that the orthographic projection of the second light emitting pattern 60, the third light emitting pattern 70 on the base plate 10 is within the range of the orthographic projection of the second electron transport layer 120 (and/or the second electron injection layer) on the base plate 10; it is of course also possible that the orthographic projection of the second electron transport layer 120 (and/or the second electron injection layer) on the base plate 10 overlaps the orthographic projections of the second light emitting pattern 60, the third light emitting pattern 70 on the base plate 10. In the case where the orthographic projection of the second electron transport layer 120 (and/or the second electron injection layer) on the base plate 10 overlaps the orthographic projection of the second light emitting pattern 60 and the third light emitting pattern 70 on the base plate 10, the second light emitting pattern 60, the third light emitting pattern 70, and the second electron transport layer 120 (and/or the second electron injection layer) may be prepared using the same mask.

In the embodiment of the invention, when the first electrode 20 is an anode and the second electrode 50 is a cathode, the second electron transport layer 120 (and/or the second electron injection layer) is disposed between the third light emitting pattern 70 and the second electrode 50, so that the number of electrons transported to the third light emitting pattern 70 is increased, and the brightness of light emitted from the third light emitting pattern 70 in the third subpixel 03 is further increased. On this basis, since the second electron injection layer and/or the second electron transport layer 120 extends from the second sub-pixel 02 to the third sub-pixel 03, the size of the second electron injection layer and/or the second electron transport layer 120 in a single sub-pixel, that is, the size of the sub-pixel, can be reduced without changing the size of the opening region of the mask, and the number of pixels is increased by more than one time compared with the prior art without changing the size of the OLED substrate.

The structure of the OLED substrate will be described in detail below in the case where the first electrode 20 is a cathode and the second electrode 50 is an anode.

In order to realize that the third light emitting pattern 70 emits light in the third subpixel 03, in some implementations, the electron transport capability of the second light emitting pattern 60 is greater than the hole transport capability of the third light emitting pattern 70.

When the first electrode 20 is a cathode and the second electrode 50 is an anode, the second light emitting pattern 60 is adjacent to the cathode and the third light emitting pattern 70 is adjacent to the anode, and since the electron transport ability of the second light emitting pattern 60 is greater than the hole transport ability of the third light emitting pattern 70, that is, the movement speed of electrons is greater than that of holes, the electrons and holes are recombined at the third light emitting pattern 70. Since the electrons and holes are recombined at the third light emitting pattern 70, the third light emitting pattern 70 emits light and the second light emitting pattern 60 does not emit light in the third subpixel 03.

On this basis, as shown in fig. 3, the OLED substrate further includes: a Hole Blocking Layer (HBL) 90 disposed between the second light emitting pattern 60 and the third light emitting pattern 70; the hole blocking layer 90 extends from the second subpixel 02 to the third subpixel 03.

Here, the hole blocking layer 90 functions to block the movement of holes. When the first electrode 20 is a cathode, the second electrode 50 is an anode, and the hole blocking layer 90 is disposed between the second light emitting pattern 60 and the third light emitting pattern 70, holes of the anode cannot move to the second light emitting pattern 60 due to the hole blocking layer 90, and thus the second light emitting pattern 60 does not emit light, and the third light emitting pattern 70 is disposed at a side of the hole blocking layer 90 close to the second electrode 50, and thus hole transport of the third light emitting pattern 70 is not affected by the hole blocking layer 90, and thus the third light emitting pattern 70 may normally emit light.

The size of the hole blocking layer 90 is not limited, and may be such that the orthographic projection of the hole blocking layer 90 on the base plate 10 is within the range of the orthographic projection of the second light emitting pattern 60 and the third light emitting pattern 70 on the base plate 10; the orthographic projection of the second light emitting pattern 60 and the third light emitting pattern 70 on the base plate 10 may be within the range of the orthographic projection of the hole blocking layer 90 on the base plate 10; of course, the orthographic projection of the hole blocking layer 90 on the base plate 10 may overlap the orthographic projections of the second and third

light emitting patterns

60 and 70 on the base plate 10. In the case that the orthographic projection of the hole blocking layer 90 on the base plate 10 overlaps with the orthographic projection of the second light emitting pattern 60 and the orthographic projection of the third light emitting pattern 70 on the base plate 10, the second light emitting pattern 60, the third light emitting pattern 70 and the hole blocking layer 90 can be prepared by using the same mask plate, so that the manufacturing cost of the OLED substrate can be reduced.

In the embodiment of the invention, the hole blocking layer 90 is disposed between the second light emitting pattern 60 and the third light emitting pattern 70, so that only the third light emitting pattern 70 in the third sub-pixel 03 is ensured to emit light, and the purity of light emitted by the third sub-pixel 03 is improved. On this basis, since the hole blocking layer 90 extends from the second sub-pixel 02 to the third sub-pixel 03, the size of the hole blocking layer 90 in a single sub-pixel, that is, the size of the sub-pixel, can be reduced without changing the size of the opening region of the mask plate, and the number of pixels is increased by more than one time compared with the prior art without changing the size of the OLED substrate.

When the first electrode 20 is a cathode and the second electrode 50 is an anode, the first light emitting pattern 30 is close to the second electrode 50 with respect to the second light emitting pattern 60, that is, the first light emitting pattern 30 is close to the anode and the second light emitting pattern 60 is close to the cathode, and since the hole transport ability of the first light emitting pattern 30 is greater than the electron transport ability of the second light emitting pattern 60, that is, the moving speed of the holes is greater than the moving speed of the electrons, the electrons and the holes are recombined at the second light emitting pattern 60. Since the electrons and holes are recombined at the second light emitting pattern 60, the second light emitting pattern 60 emits light and the first light emitting pattern 30 does not emit light in the second subpixel 02.

When the first electrode 20 is a cathode and the second electrode 50 is an anode, the first light emitting pattern 30 is close to the first electrode 20 with respect to the second light emitting pattern 60, that is, the first light emitting pattern 30 is close to the cathode, and the second light emitting pattern 60 is close to the anode, since the electron transport ability of the first light emitting pattern 30 is greater than the hole transport ability of the second light emitting pattern 60, that is, the moving speed of the electrons is greater than the moving speed of the holes, the electrons and the holes are recombined at the second light emitting pattern 60. Since the electrons and holes are recombined at the second light emitting pattern 60, the second light emitting pattern 60 emits light and the first light emitting pattern 30 does not emit light in the second subpixel 02.

On this basis, as shown in fig. 4, the OLED substrate further includes: a first hole transport layer 100 and/or a first hole injection layer disposed between the first and second

light emitting patterns

30 and 60 and the auxiliary electrode 40; the first hole transport layer 100 and the first hole injection layer extend from the first subpixel 01 to the second subpixel 02.

Note that, when the first light emitting pattern 30 is close to the first electrode 20 with respect to the second light emitting pattern 60, that is, the first hole transport layer 100 and/or the first hole injection layer is disposed between the second light emitting pattern 60 and the auxiliary electrode 40; when the second light emitting pattern 60 is adjacent to the first electrode 20 with respect to the first light emitting pattern 30, the first hole transport layer 100 and/or the first hole injection layer is disposed between the first light emitting pattern 30 and the auxiliary electrode 40.

Here, the first hole transport layer 100 and/or the first hole injection layer are disposed between the first and second

light emitting patterns

30 and 60 and the auxiliary electrode 40, and only the first hole transport layer 100 may be disposed between the first and second

light emitting patterns

30 and 60 and the auxiliary electrode 40; only the first hole injection layer may be disposed between the first and second

light emitting patterns

30 and 60 and the auxiliary electrode 40; it is of course also possible to provide the first hole transport layer 100 and the first hole injection layer between the first light emitting pattern 30, the second light emitting pattern 60, and the auxiliary electrode 40, the first hole transport layer 100 and the first hole injection layer being stacked.

The sizes of the first hole transport layer 100 and the first hole injection layer are not limited, and may be such that the orthographic projection of the first hole transport layer 100 (and/or the first hole injection layer) on the base plate 10 is within the range of the orthographic projection of the auxiliary electrode 40 and the first light emitting pattern 30 on the base plate 10; it is also possible that the orthographic projection of the auxiliary electrode 40, the first light-emitting pattern 30 on the base plate 10 is within the range of the orthographic projection of the first hole transport layer 100 (and/or the first hole injection layer) on the base plate 10; it is of course also possible that the orthographic projection of the first hole transport layer 100 (and/or the first hole injection layer) on the body 10 overlaps with the orthographic projection of the auxiliary electrode 40, the first light emitting pattern 30 on the body 10. In the case that the orthographic projection of the first hole transport layer 100 (and/or the first hole injection layer) on the base plate 10 overlaps with the orthographic projection of the auxiliary electrode 40 and the first light emitting pattern 30 on the base plate 10, the auxiliary electrode 40, the first light emitting pattern 30 and the first hole transport layer 100 (and/or the first hole injection layer) can be prepared by using the same mask plate, so that the manufacturing cost of the OLED substrate can be reduced.

In the embodiment of the invention, when the first electrode 20 is a cathode and the second electrode 50 is an anode, since the first hole transport layer 100 and/or the first hole injection layer are/is disposed between the first light emitting pattern 30, the second light emitting pattern 60 and the auxiliary electrode 40, the number of holes transported to the first light emitting pattern 30 and the second light emitting pattern 60 is increased, so that the luminance of light emitted from the first light emitting pattern 30 in the first subpixel 01 and the luminance of light emitted from the second light emitting pattern 60 in the second subpixel 02 are increased. On the basis, the first hole transport layer 100 and/or the first hole injection layer extend from the first sub-pixel 01 to the second sub-pixel 02, so that the size of the first hole transport layer 100 and/or the first hole injection layer in a single sub-pixel can be reduced under the condition that the size of an opening area of the mask plate is not changed, namely the size of the sub-pixel is reduced, and under the condition that the size of the OLED substrate is not changed, compared with the prior art, the number of pixels is increased by more than one time.

Based on the above, as shown in fig. 5, the OLED substrate further includes: a third electron transport layer 110 and/or a third electron injection layer are disposed between the first and second

light emitting patterns

30 and 60 and the first electrode 20.

Here, the third electron transport layer 110 and/or the third electron injection layer are disposed between the first and second

light emitting patterns

30 and 60 and the first electrode 20, and the third electron transport layer 110 may be disposed between the first and second

light emitting patterns

30 and 60 and the first electrode 20; a third electron injection layer may be disposed between the first and second

light emitting patterns

30 and 60 and the first electrode 20; it is of course also possible to provide a third electron transport layer 110 and a third electron injection layer between the first and second

light emitting patterns

30 and 60 and the first electrode 20, the third electron transport layer and the third electron injection layer being stacked.

In some embodiments, an entire layer of the third electron transport layer 110 and/or the third electron injection layer is tiled between the first and second

light emitting patterns

30 and 60 and the first electrode 20. In other embodiments, in the case where the OLED substrate includes the third electron transport layer 110, the third electron transport layer 110 includes a first sub electron transport layer and a second sub electron transport layer which are stacked, the first sub electron transport layer extends from the first subpixel 01 to the second subpixel 02, and the second sub electron transport layer extends from the second subpixel 02 to the third subpixel 03. Similarly, in the case that the OLED substrate includes a third electron injection layer, the third electron injection layer includes a first sub-electron injection layer and a second sub-electron injection layer, which are stacked, the first sub-electron injection layer extends from the first sub-pixel 01 to the second sub-pixel 02, and the second sub-electron injection layer extends from the second sub-pixel 02 to the third sub-pixel 03.

In the embodiment of the invention, when the first electrode 20 is a cathode and the second electrode 50 is an anode, since the third electron injection layer and/or the third electron transport layer 110 is disposed between the first light emitting pattern 30, the second light emitting pattern 60 and the first electrode 20, the number of electrons transported to the first light emitting pattern 30 and the second light emitting pattern 60 is increased, so that the luminance of the light emitted from the first light emitting pattern 30 in the first subpixel 01 and the luminance of the light emitted from the second light emitting pattern 60 in the second subpixel 02 are further increased.

Further, as shown in fig. 6, the OLED substrate further includes: a second hole injection layer and/or a second hole transport layer 120 disposed between the third light emitting pattern 70 and the second electrode 50, the second hole injection layer and the second hole transport layer 120 extending from the second subpixel 02 to the third subpixel 03.

Here, the second hole injection layer and/or the second hole transport layer 120 is disposed between the third light emitting pattern 70 and the second electrode 50, and may be disposed between the third light emitting pattern 70 and the second electrode 50; a second hole transport layer 120 may be disposed between the third light emitting pattern 70 and the second electrode 50; it is of course also possible to provide a second hole injection layer and a second hole transport layer 120 between the third light emitting pattern 70 and the second electrode 50, the second hole injection layer and the second hole transport layer 120 being stacked.

The sizes of the second hole transport layer 120 and the second hole injection layer are not limited, and may be such that the orthographic projection of the second hole transport layer 120 (and/or the second hole injection layer) on the base plate 10 is within the range of the orthographic projection of the second light emitting pattern 60 and the third light emitting pattern 70 on the base plate 10; it is also possible that the orthographic projection of the second light emitting pattern 60, the third light emitting pattern 70 on the backplane 10 is within the range of the orthographic projection of the second hole transporting layer 120 (and/or the second hole injecting layer) on the backplane 10; it is of course also possible that the orthographic projection of the second hole transport layer 120 (and/or the second hole injection layer) on the backplane 10 overlaps the orthographic projection of the second light emitting pattern 60, the third light emitting pattern 70 on the backplane 10. In the case where the orthographic projection of the second hole transport layer 120 (and/or the second hole injection layer) on the base plate 10 overlaps the orthographic projection of the second light emitting pattern 60, the third light emitting pattern 70 on the base plate 10, the second light emitting pattern 60, the third light emitting pattern 70, the second hole transport layer 120 (and/or the second hole injection layer) may be prepared using the same mask.

In the embodiment of the invention, when the first electrode 20 is a cathode and the second electrode 50 is an anode, the second hole transport layer 120 (and/or the second hole injection layer) is disposed between the third light emitting pattern 70 and the second electrode 50, so that the number of holes transported to the third light emitting pattern 70 is increased, and the brightness of light emitted from the third light emitting pattern 70 in the third subpixel 03 is further increased. On this basis, since the second hole injection layer and/or the second hole transport layer 120 extends from the second sub-pixel 02 to the third sub-pixel 03, the size of the second hole injection layer and/or the second hole transport layer 120 in a single sub-pixel, that is, the size of the sub-pixel, can be reduced without changing the size of the opening region of the mask, and the number of pixels is increased by more than one time compared with the prior art without changing the size of the OLED substrate.

Embodiments of the present invention include, but are not limited to, the above-described electron transport layer, electron injection layer, hole transport layer, hole injection layer, electron blocking layer, hole blocking layer, and may also include other optical modulation layers.

An embodiment of the present invention provides an OLED display device, as shown in fig. 7, including an OLED substrate 1 and an encapsulation layer 2 for encapsulating the OLED substrate; the OLED substrate in the OLED display device is the OLED substrate 1.

Here, in some embodiments, the encapsulation layer 2 is an encapsulation substrate. In other embodiments, the encapsulation layer 2 is an encapsulation film.

The embodiment of the invention provides an OLED display device, which includes an OLED substrate 1, where the OLED substrate 1 in the OLED display device has the same structure and beneficial effects as the OLED substrate 1, and since the structure and beneficial effects of the OLED substrate 1 have been described in detail in the above embodiment, details are not repeated here.

The embodiment of the invention also provides a preparation method of the OLED substrate, wherein the OLED substrate comprises a first sub-pixel 01, a second sub-pixel 02 and a third sub-pixel 03. The method for manufacturing the OLED substrate, as shown in fig. 8, includes:

s100, as shown in fig. 9, a plurality of first electrodes 20 are formed on the base substrate 10, and one first electrode 20 is located in one sub-pixel.

In some embodiments, the base plate 10 is a substrate base plate. In other embodiments, the base plate 10 includes a substrate base plate and a thin film transistor disposed on the substrate base plate. At this time, the base plate 10 may also be referred to as an array substrate.

The plurality of first electrodes 20 are independent of each other in order to enable individual control of the brightness of the light emitted by each sub-pixel.

S101, as shown in fig. 10, the first light emitting pattern 30, the second light emitting pattern 60, the third light emitting pattern 70, and the auxiliary electrode 40 are formed on the first electrode 20. Wherein, the first light emitting pattern 30 and the auxiliary electrode 40 both extend from the first subpixel 01 to the second subpixel 02; the second and third

light emitting patterns

60 and 70 each extend from the second subpixel 02 to the third subpixel 03; the first light emitting pattern 30 is adjacent to the first electrode 20 with respect to the auxiliary electrode 40; the auxiliary electrode 40 is positioned between the second light emitting pattern 60 and the third light emitting pattern 70; in the second subpixel 02, the electrons and holes are recombined at the second light emitting pattern 60 to make the second light emitting pattern 60 emit light; in the third subpixel 03, electrons and holes are recombined at the third light emitting pattern 70 to cause the third light emitting pattern 70 to emit light.

Before S101, as shown in fig. 10, a pixel defining layer 80 may be further formed on the base plate 10, the pixel defining layer 80 including open regions each exposing one of the first electrodes 20, the pixel defining layer 80 serving to space apart adjacent first electrodes 20.

In some embodiments, the first light emitting pattern 30 is formed on the base substrate 10, and then the second light emitting pattern 60, the auxiliary electrode 40, and the third light emitting pattern 70 are formed. In other embodiments, the second light emitting pattern 60 is formed on the base substrate 10, and then the first light emitting pattern 30, the auxiliary electrode 40, and the third light emitting pattern 70 are formed.

The first, second, and third

light emitting patterns

30, 60, and 70 may be formed by an evaporation process. The auxiliary electrode 40 may be formed through an evaporation process or a patterning process. The patterning process includes coating photoresist, mask exposure, development, and etching processes.

S102, as shown in fig. 1 and 2, the second electrode 50 is formed.

Here, the second electrode 50 may be formed using a vapor deposition process or an evaporation process.

The embodiment of the invention provides a method for manufacturing an OLED substrate, and the method for manufacturing the OLED substrate 01 has the same structure and beneficial effects as the OLED substrate 01 provided in the embodiment, and the structure and beneficial effects of the OLED substrate 01 have been described in detail in the embodiment, so that the details are not repeated herein.

Step 101, specifically comprising:

evaporating the first light-emitting pattern 30 and the auxiliary electrode 40 using a first mask, and evaporating the second light-emitting pattern 60 and the third light-emitting pattern 70 using a second mask; the size of the opening area of the first mask plate is the same as that of the opening area of the second mask plate.

In the embodiment of the invention, the first mask plate is used for forming the first light-emitting pattern 30 and the auxiliary electrode 40, and the second mask plate is used for forming the second light-emitting pattern 60 and the third light-emitting pattern 70, i.e. the two mask plates are adopted for preparing the light-emitting patterns on the OLED substrate, so that the difficulty and the cost of the process for preparing the OLED substrate are not increased.

In the case where the first electrode 20 is an anode and the second electrode 50 is a cathode, if the OLED substrate further includes an electron blocking layer 90 disposed between the second light emitting pattern 60 and the third light emitting pattern 70, the electron blocking layer 90 may be evaporated by using a second mask. If the OLED substrate further includes a second electron injection layer and/or a second electron transport layer 120 disposed between the third light emitting pattern 70 and the second electrode 50, the second electron injection layer and the second electron transport layer 120 may also be evaporated by using a second mask. If the OLED substrate further includes a first electron transport layer 100 and/or a first electron injection layer disposed between the first light emitting pattern 30, the second light emitting pattern 60, and the auxiliary electrode 40, the first electron transport layer 100 and/or the first electron injection layer may be evaporated by using a first mask.

In the case where the first electrode 20 is a cathode and the second electrode 50 is an anode, if the OLED substrate further includes a hole blocking layer 90 disposed between the second light emitting pattern 60 and the third light emitting pattern 70, the hole blocking layer 90 may be further evaporated by using a second mask. If the OLED substrate further includes a second hole injection layer and/or a second hole transport layer 120 disposed between the third light emitting pattern 70 and the second electrode 50, the second hole injection layer and the second hole transport layer 120 may also be evaporated by using a second mask. If the OLED substrate further includes a first hole transport layer 100 and/or a first hole injection layer disposed between the first light emitting pattern 30, the second light emitting pattern 60, and the auxiliary electrode 40, the first hole transport layer 100 and/or the first hole injection layer may also be evaporated by using a first mask.

The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.

Claims

1. An OLED substrate includes a first subpixel, a second subpixel, and a third subpixel disposed on a backplane;

the first sub-pixel comprises a first electrode, a first light-emitting pattern, an auxiliary electrode and a second electrode which are sequentially stacked;

the second sub-pixel comprises a first electrode, an auxiliary electrode, a third light-emitting pattern, a second electrode, a first light-emitting pattern and a second light-emitting pattern, wherein the first electrode, the auxiliary electrode, the third light-emitting pattern and the second electrode are sequentially stacked; electrons and holes are recombined at the second light emitting pattern to cause the second light emitting pattern to emit light;

the third sub-pixel comprises a first electrode, a second light-emitting pattern, a third light-emitting pattern and a second electrode which are sequentially stacked; electrons and holes are recombined at the third light emitting pattern to cause the third light emitting pattern to emit light;

wherein the first light emitting pattern and the auxiliary electrode each extend from the first subpixel to the second subpixel; the second light emitting pattern and the third light emitting pattern each extend from the second sub-pixel to the third sub-pixel.

2. The OLED substrate of claim 1, wherein the first electrode is an anode and the second electrode is a cathode; a hole transport ability of the second light emitting pattern is greater than an electron transport ability of the third light emitting pattern;

or, the first electrode is a cathode, and the second electrode is an anode; an electron transport ability of the second light emitting pattern is greater than a hole transport ability of the third light emitting pattern.

3. The OLED substrate of claim 1 or 2, wherein the first electrode is a cathode and the second electrode is an anode; or, the first electrode is an anode and the second electrode is a cathode;

in a case where the first light emitting pattern is close to an anode with respect to the second light emitting pattern, a hole transport ability of the first light emitting pattern is greater than an electron transport ability of the second light emitting pattern;

in a case where the first light emitting pattern is close to a cathode with respect to the second light emitting pattern, an electron transport ability of the first light emitting pattern is greater than a hole transport ability of the second light emitting pattern.

4. The OLED substrate according to claim 1, wherein an orthographic projection of the first light emitting pattern on the backplane and an orthographic projection of the auxiliary electrode on the backplane overlap;

and/or the orthographic projection of the second light-emitting pattern on the bottom plate and the orthographic projection of the third light-emitting pattern on the bottom plate are overlapped.

5. The OLED substrate of claim 1,

in the case where the first electrode is an anode and the second electrode is a cathode, the OLED substrate further includes an electron blocking layer disposed between the second light emitting pattern and the third light emitting pattern;

or, in the case that the first electrode is a cathode and the second electrode is an anode, the OLED substrate further includes a hole blocking layer disposed between the second light emitting pattern and the third light emitting pattern;

wherein the electron blocking layer and the hole blocking layer both extend from the second subpixel to the third subpixel.

6. The OLED substrate of claim 1,

in the case that the first electrode is an anode and the second electrode is a cathode, the OLED substrate further includes a first electron transport layer and/or a first electron injection layer disposed between the first and second light emitting patterns and the auxiliary electrode, the first electron transport layer and the first electron injection layer extending from the first subpixel to the second subpixel; and/or the OLED substrate further includes a second electron transport layer and/or a second electron injection layer disposed between the third light emitting pattern and the second electrode, the second electron transport layer and the second electron injection layer extending from the second subpixel to the third subpixel;

in the case that the first electrode is a cathode and the second electrode is an anode, the OLED substrate further includes a first hole transport layer and/or a first hole injection layer disposed between the first light emitting pattern, the second light emitting pattern, and the auxiliary electrode; the first hole transport layer and the first hole injection layer extend from the first subpixel to the second subpixel; and/or the OLED substrate further includes a second hole transport layer and/or a second hole injection layer disposed between the third light emitting pattern and the second electrode, the second hole injection layer and the second hole injection layer extending from the second subpixel to the third subpixel.

7. The OLED substrate of claim 1,

under the condition that the first electrode is an anode and the second electrode is a cathode, the OLED substrate further comprises a third hole injection layer and/or a third hole transport layer which are arranged between the first light-emitting pattern, the second light-emitting pattern and the first electrode;

in a case where the first electrode is a cathode and the second electrode is an anode, the OLED substrate further includes a third electron transport layer and/or a third electron injection layer disposed between the first and second light emitting patterns and the first electrode.

8. The OLED display device is characterized by comprising an OLED substrate and an encapsulating layer for encapsulating the OLED substrate;

wherein the OLED substrate is the OLED substrate of any one of claims 1-7.

9. A preparation method of an OLED substrate is characterized in that the OLED substrate comprises a first sub-pixel, a second sub-pixel and a third sub-pixel, and the preparation method of the OLED substrate comprises the following steps:

forming a plurality of first electrodes on a base plate, one of the first electrodes being located in one of the sub-pixels;

forming a first light emitting pattern, a second light emitting pattern, a third light emitting pattern, and an auxiliary electrode on the first electrode; wherein the first light emitting pattern and the auxiliary electrode each extend from the first subpixel to the second subpixel; the second light emitting pattern and the third light emitting pattern both extend from the second sub-pixel to the third sub-pixel; the first light emitting pattern is adjacent to the first electrode with respect to the auxiliary electrode; the auxiliary electrode is positioned between the second light emitting pattern and the third light emitting pattern; in the second subpixel, electrons and holes are recombined at the second light emitting pattern to cause the second light emitting pattern to emit light; in the third subpixel, electrons and holes recombine at the third light emitting pattern to cause the third light emitting pattern to emit light;

forming a second electrode.

10. The method of claim 9, wherein forming the first, second, third and auxiliary electrodes on the first electrode comprises:

evaporating the first light-emitting pattern and the auxiliary electrode by using a first mask plate, and evaporating the second light-emitting pattern and the third light-emitting pattern by using a second mask plate;

and the size of the opening area of the first mask plate is the same as that of the opening area of the second mask plate.