CN1285242C - Distribution base plate, electronic device, electrooptics device and electronic instrument - Google Patents

Abstract

The purpose of the present invention is to reduce the parasitic capacitance generated in the conductive portion for stabilizing the performance. The solution is to allocate a structural member 18 with a low permittivity less than 4 on the substrate 15, and to dispose a functional film 140 divided by the structural member 18 with a low permittivity.

Description

Wiring boards, electronic devices, electro-optical devices, and electronic instruments

technical field

The present invention relates to electronic devices such as electro-optical devices and semiconductor devices, wiring boards suitable for electronic devices, and electro-optical device electronic equipment suitable for display devices.

technical background

As the display device, there are electro-optical devices such as a liquid crystal display device having a liquid crystal element, an organic electroluminescence (hereinafter referred to as organic EL) element, and an organic EL display device. In particular, an organic EL display device is self-luminous with high luminance, can be driven at DC low voltage, and can respond at high speed, so it has excellent display performance. Furthermore, the display device can be made thinner, lighter in weight, and lower in power consumption (for example, Patent Document 1).

[Patent Document 1] International Publication No. WO 98/36406 Pamphlet

However, it is known that in an electro-optical device, parasitic capacity generated between wirings or the like hinders data rewriting operations. The capacity between such wires depends on the length of the wires, and increases as the wires grow. For example, when an electro-optical device is used as a display device, it becomes a cause that hinders a large screen.

In recent years, in semiconductor devices such as memories, high integration and high-speed operation are required, and the capacity generated between conductive parts such as wiring has become a problem.

Contents of the invention

It is an object of the present invention to provide a wiring board suitable for stable performance, an electro-optical device capable of forming a large screen, and a long-term stable operation, and an electronic device using the same, in view of the above-mentioned problems.

In order to achieve the above object, the first wiring board of the present invention is characterized in that it includes a base body including wiring, and a member having a dielectric constant of 4 or less arranged on the upper face of the base body. Area.

A typical silicon oxide film has a dielectric constant of 4.2, so the above-mentioned components have a dielectric constant lower than this value. According to the wiring board of the present invention, since the components having a low dielectric constant of 4 or less are arranged, for example, when an electro-optical material is arranged in a region where the above-mentioned components are not formed, and a conductive part such as an electrode is formed thereon, the conductive The conductive part and the above wiring can reduce the generated parasitic living capacity.

The second wiring board of the present invention is characterized in that it includes a base body including an insulating substrate and wiring provided above the insulating substrate, and a spacer arranged on the upper surface of the base body, and a non-conductor is provided on the upper surface of the base body. In the region where the member is formed, the dielectric constant of the spacer is lower than that of the insulating substrate.

When the above-mentioned insulating substrate is used for a display device or the like, it is preferable to use quartz or glass as the above-mentioned insulating substrate. In this case, the dielectric constant of the above-mentioned spacer is preferably 4 or less.

In the above-mentioned wiring board, the dielectric constant of the spacer is 3 or less, more preferably 2.5 or less. It is also possible to arrange a plurality of the aforementioned regions on the base body.

In the above-mentioned wiring board, for example, when an active element is included in the above-mentioned base body, by reducing the parasitic capacitance, the active element can be operated with a higher frequency or high-speed drive signal. Examples of active elements include semiconductor elements such as transistors and two-terminal elements such as M1M.

In the above-mentioned substrate, the spacer includes, for example, vitreous silica, alkyl siloxane polymer, alkyl silsesquioxane polymer, hydrogenated alkyl silsesquioxane polymer, poly Any one of the aryl ethers is spin-formed on a glass plate, a diamond film, and a fluorinated amorphous carbon film.

The above-mentioned member may also be formed of a porous material.

Specifically, there are aerogels, porous silica, gels in which magnesium fluoride fine particles are dispersed, fluorine-based polymers, porous polymers containing fine particles, and the like.

The electronic device of the present invention is characterized in that the functional film is disposed corresponding to the above-mentioned region of the above-described substrate.

In the above electronic device, since the spacer having a relatively low dielectric constant is disposed between the functional films, the parasitic capacitance generated between the functional films can be reduced.

In the above-mentioned electronic device, when a conductive film such as an electrode is disposed above the functional film, the wiring and the electrode are separated by the member, so that parasitic capacitance generated between the electrode and the wiring can be reduced. Especially when the signal is supplied through the above wiring, problems such as signal delay and weakening can be reduced. Examples of the material forming the conductive film include organic conductive materials, inorganic conductive materials (metals, etc.), mixtures thereof, and the like.

In the above-mentioned electronic device, the arrangement of the above-mentioned components is not limited to the entire periphery of the above-mentioned functional film.

The first electro-optical device of the present invention is characterized by comprising a base body including a substrate and wiring provided above the substrate, a plurality of pixel electrodes arranged on the upper surface of the base body, and a counter electrode arranged above the pixel electrodes. , a functional film containing an electro-optical material disposed between each of the plurality of pixel electrodes and the counter electrode, and a spacer disposed around the functional film and disposed between the counter electrode and the upper surface of the substrate, the spacer The dielectric constant is lower than that of the above-mentioned substrate.

In the above-mentioned electro-optical device, it is preferable to use quartz or glass as the above-mentioned substrate. In this case, the dielectric constant of the above-mentioned components is preferably 4 or less.

A second electro-optical device of the present invention is characterized by comprising a substrate including wiring, a plurality of pixel electrodes disposed on the substrate, a counter electrode disposed above the pixel electrodes, and each of the plurality of pixel electrodes and the counter electrode. A functional film containing an electro-optic material disposed between them, and a spacer disposed around the functional film and disposed between the counter electrode and the upper surface of the substrate, the dielectric constant of the spacer is 4 or less.

In the above-mentioned electro-optical device, the dielectric constant of the spacer is preferably 3 or less, more preferably 2.5 or less.

Examples of the above-mentioned electro-optical materials include materials used in liquid crystal elements, electrophoretic moving elements, or electron emitting elements, in addition to organic electroluminescent materials.

In the above-mentioned electro-optical device, the base body further includes an active element connected to the pixel electrode, and the wiring also includes a signal wiring for supplying a signal to the active element. Examples of the active element include semiconductor elements such as transistors and two-terminal elements such as M1M.

In the above-mentioned electro-optical device, the above-mentioned spacer is made of, for example, vitreous silica, an alkyl siloxane polymer, an alkyl silsesquioxane polymer, a hydrogenated alkyl silsesquioxane polymer, Any kind of polyaryl ether spin-formed film, diamond film, and fluorinated amorphous carbon film on a glass plate.

The above-mentioned member may also be formed of a porous material.

Specifically, there are aerogels, porous silica, gels in which magnesium fluoride fine particles are dispersed, fluorine-based polymers, porous polymers, and substances containing fine particles in predetermined materials.

In the above-mentioned electro-optical device, a barrier layer for suppressing transmission of substances may be provided between the spacer and the active element.

As the above-mentioned separator, when using a low-dielectric material, the low-dielectric material is generally a porous material or a low-density material. Substances such as metal and oxygen are easy to permeate, and the permeable substances are easy to generate active components. Deterioration, corrosion of wiring, etc. In contrast, by providing the barrier layer between the member and the active element, permeation of substances that cause deterioration, corrosion, and the like can be suppressed.

In the above-mentioned electro-optical device, at least a part of the spacer is covered with a protective film that prevents penetration of substances.

Since the above-mentioned members are easy to permeate substances, at least a part of the above-mentioned spacer is covered with the above-mentioned protective film to suppress the diffusion of the substances between the above-mentioned members. Accordingly, corrosion and deterioration of internal wiring or active elements of the electro-optical device can be reduced. Generally speaking, most of the low dielectric constant materials are mechanically brittle. Therefore, by providing a protective film on the above-mentioned components, the effect of enhancing the mechanical properties is achieved.

An electronic device according to the present invention is characterized by comprising the above-mentioned electronic device as a display device.

According to the electronic device of the present invention, by reducing the parasitic capacity, for example, a high-frequency or high-speed input signal can perform a good and stable follow-up display operation.

Description of drawings

FIG. 1 is a schematic cross-sectional structure diagram of an electro-optical device and a substrate of the present invention.

Fig. 2 is a schematic diagram showing the structure of an organic EL display device according to an embodiment of the present invention.

FIG. 3 is an example of an active matrix type organic EL display circuit.

Fig. 4 is a schematic diagram showing a cross-sectional structure of a pixel region (organic EL device), (a) showing a high emission type, and (b) a reverse emission type.

Fig. 5 is an example of the plane structure form of the spacer.

FIG. 6 is an enlarged schematic view of a cross-sectional structure of a high emission type pixel region (organic EL device).

FIG. 7 is a diagram illustrating a method of manufacturing an electro-optical device of the present invention using an embodiment of a process for manufacturing a display device having an organic EL element.

FIG. 8 is a diagram illustrating a method of manufacturing an electro-optical device of the present invention using an embodiment of a process for manufacturing a display device having an organic EL element.

FIG. 9 is a diagram illustrating a method of manufacturing an electro-optical device of the present invention using an embodiment of a process for manufacturing a display device having an organic EL element.

FIG. 10 is a diagram illustrating a method of manufacturing an electro-optical device of the present invention using an embodiment of a process for manufacturing a display device having an organic EL element.

FIG. 11 is a diagram illustrating a method of manufacturing an electro-optical device of the present invention using an embodiment of a process for manufacturing a display device having an organic EL element.

Fig. 12 is a schematic diagram of another form example of an organic EL device.

Fig. 13 is a schematic diagram of another form example of an organic EL device.

FIG. 14 is a schematic diagram of another example of an organic EL display device circuit.

Fig. 15 is a schematic diagram of an embodiment of the electronic instrument of the present invention.

Fig. 16 is a schematic diagram of another embodiment of the electronic instrument of the present invention.

Fig. 17 is a schematic diagram of another embodiment of the electronic instrument of the present invention.

Fig. 18 is a schematic diagram of another embodiment of the electronic instrument of the present invention.

Fig. 19 is a schematic diagram of another embodiment of the electronic instrument of the present invention.

Fig. 20 is a schematic diagram of another embodiment of the electronic instrument of the present invention.

In the figure, 10, 100-organic EL display device; 15, 121-matrix material; 16, 142, 143-TFT (active element); 17, 102-light-emitting area; 18, 281-spacer; Barrier layer; 21, 271-protective film; 140-organic EL element (functional film).

Detailed ways

The present invention will be described in detail below.

FIG. 1 conceptually shows a cross-sectional structure of an electro-optical device and a substrate of the present invention, in which reference numeral 10 denotes an electro-optical device and reference numeral 11 denotes a wiring board. The wiring board 11 is composed of a multilayer wiring type including active elements such as thin film transistors (TFT: Thin Film Transistor, hereinafter referred to as TFT) provided on a base material 15 and insulating layers. In the electro-optical device 10 , a plurality of light-emitting regions 17 including a light-emitting layer as a functional film are provided on a wiring board 11 , and the light-emitting state thereof is controlled by an active element 16 . At the boundary of the plurality of light emitting regions 17, a spacer (reservoir) 18 is provided as an insulating layer.

The electro-optical device 10 of the present invention is characterized in that the spacer 18 is formed of a low dielectric constant material. The spacer 18 can reduce the parasitic capacitance generated between conductive parts such as wirings by being formed of a low dielectric constant material.

The dielectric constant (specific permittivity) of the low dielectric constant material is, for example, preferably 4 or less, 3 or less, more preferably 2.5 or less. The low dielectric constant material can be obtained by forming a porous substance (porous body) with a high porosity, so that the above-mentioned low dielectric constant material can be obtained.

As a method of forming the spacer 18 using a low-permittivity material, for example, various coating methods and CVD methods (chemical vapor phase growth) are used to form a layer, and then etching and photolithography are used to form a pattern. A spacer 18 of a prescribed shape is obtained.

As the low dielectric constant material, there are, for example, vitreous silica, alkyl siloxane polymers, alkyl silsesquioxane polymers, hydrogenated alkyl silsesquioxane polymers, polyaryl Any kind of spin-on glass film, diamond film, and fluorinated amorphous carbon film in ether.

Furthermore, as low dielectric constant materials, for example, aerogels, porous silica, gels in which magnesium fluoride fine particles are dispersed, fluorine-based polymers, porous polymers, and articles containing fine particles in predetermined materials can also be used. ,wait.

As the aerogel, for example, silica aerogel and alumina-based aerogel can be used. Silica airgel is a wet gel formed by the sol-gel reaction of silicon alkoxide, and a porous body with uniform ultrafine microstructure is obtained by supercritical drying. The voids of silica airgel account for more than 90% of the volume, and the rest is a material composed of tens of nanometer fine _SiO2 particles agglomerated into dendrites. Also, the dielectric constant can be adjusted by changing the porosity.

The manufacture of silica airgel is through the process of making wet gel by sol-gel method, the process of aging the wet gel, and the supercritical drying of airgel by drying the wet gel by supercritical drying method. process and manufacture. The supercritical drying method is a suitable method for drying the gel substance without shrinking the liquid in the colloidal gel substance formed by the solid phase and the liquid phase by replacing and removing the supercritical fluid. Aerogels with high porosity.

In addition, when forming the above-mentioned spin-on-glass film (Spin on glass), the above-mentioned supercritical drying method can also be used. By using the supercritical drying method, the coating and film quality can be further improved.

When forming the spacer 18 using silica aerogel, the wet gel is coated on the base material by a coating method, followed by supercritical drying, or a synthetic resin (organic substance) may be mixed with the wet gel. The synthetic resin at this time has a thermal denaturation temperature higher than that of a supercritical fluid. For example, when alcohol is used, as a synthetic resin whose thermal denaturation temperature is higher than the critical temperature of alcohol, there are hydroxypropyl cellulose (HPC), polyvinyl butyral Aldehydes (PVB), ethyl cellulose (EC), etc. (PVB and EC are soluble in alcohol but not in water). When ether is used as the solvent, chlorine-based polyethylene, etc. can be selected as the resin, and HPC, etc., are preferably selected when _CO2 is used as the solvent.

Porous silicon oxide (porous SiO ₂ film) can be formed by plasma CVD (plasma chemical vapor growth method), and SiH ₄ and N ₂ O are used as reaction gases. Furthermore, a porous SiO ₂ film is formed on the SiO ₂ film. The SiO ₂ film can be formed by atmospheric pressure CVD (atmospheric pressure chemical vapor growth) using a reaction gas containing TEOS (tetraethoxysilane), O ₂ (oxygen) and low concentration O ₃ (ozone). The low-concentration O ₃ refers to a concentration of O ₃ that is lower than the concentration required for the oxidation of TEOS.

Examples of fluoropolymers or materials containing them include perfluoroalkyl-polyethers, perfluoroalkylamines, or mixed films of perfluoroalkyl-polyether-perfluoroalkylamines.

Furthermore, a soluble or dispersible fluorocarbon may also be mixed in a predetermined polymer binder.

As polymer binders, there are polyvinyl alcohol, polyacrylic acid, polyvinylpyrrolidone, polyvinylsulfonic acid sodium salt, polyvinyl methyl ether, polyethylene glycol, polyα-trifluoromethacrylic acid, polyvinyl methyl ether - co-maleic anhydride, polyethylene glycol-co-propylene glycol, polymethacrylic acid, etc.

As fluorocarbons, there are perfluorooctanoic acid-ammonium salt, perfluorooctanoic acid-tetramethylammonium salt, C-7 and C-10 perfluoroalkylsulfonate ammonium salt, C-7 and C-10 perfluoroalkylsulfonic acid Tetramethylammonium salt, fluorinated alkyl quaternary ammonium iodide, perfluoroadipic acid, and quaternary ammonium salt of perfluoroadipic acid, etc.

For low dielectric constant materials, particles can also be used to form voids with micropores between or within particles. As the fine particles, inorganic fine particles or organic fine particles can be used. The inorganic fine particles are preferably amorphous. The inorganic fine particles are preferably formed of metal oxides, nitrides, sulfides or halides, more preferably formed of metal oxides or metal halides, particularly preferably formed of metal oxides or metal fluorides. The metal atoms are preferably Na, K, Mg, Ca, Ba, Al, Zn, Fe, Cu, Ti, Sn, In, W, Y, Sb, Mn, Ga, V, Nb, Ta, Ag, Si , B, Bi, Mo, Ce, Cd, Be, Pb and Ni, more preferably Mg, Ca, B and Si. Inorganic compounds containing two metals can also be used. Particularly preferred is silicon dioxide, ie SiO ₂ .

Micropores in inorganic fine particles are formed, for example, by cross-linking silica molecules forming the fine particles, and when the silica molecules are cross-linked, the volume shrinks and the fine particles become porous. Inorganic fine particles having micropores (porous) can be obtained by using the sol-gel method (recorded in each gazette of JP-A-53-112732 and JP-A-57-9051) or a precipitation method (APPLIEDOPTICS, 27, page 3356 (1988) record), the dispersion can be directly synthesized. A dispersion can also be obtained by mechanically pulverizing the powder obtained by the drying and precipitation method. Commercially available porous inorganic fine particles (for example, silica melt) can also be used. Inorganic fine particles having micropores are preferably dispersed in a suitable medium for use. As the dispersant, water, alcohols (eg methanol, ethanol, isopropanol) and ketones (eg methyl ethyl ketone, methyl isobutyl ketone) are preferable.

The organic particles are also preferably amorphous. The organic microparticles are preferably polymer microparticles synthesized by polymerization of monomers (for example, emulsion polymerization). The polymer of organic particles preferably contains fluorine atoms. In order to synthesize fluorine-containing polymers, examples of monomers containing fluorine atoms include fluoroolefins (for example, vinyl fluoride, vinylidene fluoride, tetrafluoroethylene, hexafluoro Propylene, perfluoro-2,2-dimethyl-1,3-dioxocene), fluorinated alkyl esters of acrylic or methacrylic acid, and fluorinated vinyl ethers. Copolymers of monomers containing fluorine atoms and monomers not containing fluorine can also be used. Examples of monomers not containing fluorine atoms include olefins (for example, ethylene, propylene, isobutylene, vinyl chloride, vinylidene chloride), acrylates (for example, methyl acrylate, ethyl acrylate, 2-ethylhexyl acrylate, ), methacrylates (e.g. methyl methacrylate, ethyl methacrylate, butyl methacrylate), styrenics (styrene, vinyltoluene, alpha-methylstyrene), vinyl ethers (e.g., methyl vinyl ether), vinyl esters (e.g., vinyl acetate, vinyl propionate), acrylic acid amides (e.g., N-tert-butyl acrylamide, N-cyclohexyl acrylamide), methyl Acrylamides and Acrylonitriles.

Micropores within organic microparticles, for example, can be formed by cross-linking the polymers that form the microparticles. When the polymer is cross-linked, it shrinks in volume and the particles become porous. In order to cross-link the polymer forming the microparticles and to synthesize the monomer of the polymer, it is preferable to form a polyfunctional monomer in an amount of 20 mol% or more. The ratio of the polyfunctional monomer is more preferably 30-80 mol%, especially preferably 35-50 mol%. Examples of the polyfunctional monomer include dienes (for example, butadiene, pentadiene), polyhydric alcohols and Esters of acrylic acid (e.g., ethylene glycol diacrylate, 1,4-cyclohexane diacrylate, dipentaerythritol hexaacrylate), esters of polyols and methacrylic acid (e.g., ethylene glycol dimethacrylate esters, 1,2,4-cyclohexane tetramethacrylate, pentaerythritol tetramethacrylate), divinyl compounds (for example, divinylcyclohexane, 1,4-divinylbenzene), divinylsulfone, Diacrylamides (eg, methylene diacrylamide) and dimethacrylamides. Micropores between particles are formed by overlapping at least two particles.

As the low dielectric constant material, a material having fine pores and particulate inorganic substances can also be used. At this time, after forming the above-mentioned material layer by coating, an activated gas treatment is performed to desorb the gas from the layer to form fine pores.

Two or more types of ultrafine particles (for example, MgF ₂ and SiO ₂ ) may be mixed. At this time, ultrafine particles, SiO ₂ produced by thermal decomposition of ethyl silicate, are bonded. In the thermal decomposition of ethyl silicate, the combustion of the ethyl moiety is utilized to generate carbon dioxide and water vapor. Voids are formed between the ultrafine particles by detachment of carbon dioxide and water vapor from the layers.

It is also possible to form a layer containing inorganic fine powder of porous silica and a binder, and by stacking two or more fine particles made of fluorine-containing polymers, it is also possible to form a layer in which voids are formed between the fine particles.

As the low dielectric constant material, a substance capable of increasing porosity at the molecular structure level, for example, a polymer having a branched structure such as a dendrite, can also be used.

Between the spacer 18 and the active element 16, a barrier layer 20 is preferably arranged against the passage of metal. The isolation member 18 formed of a low-dielectric material is mostly porous, and metals and other substances are easy to pass through. The metal that penetrates the isolation member 18 will invade the active element 16 and undergo a chemical reaction, resulting in active components. Element 16 is degraded. Between the spacer 18 and the active element 16, by providing the above-mentioned barrier layer 20, deterioration of the active element 16 is suppressed, and degradation of element performance is suppressed.

As a material for forming the barrier layer 20, for example, in addition to silicon-containing compounds such as ceramics and silicon nitride, silicon oxide nitride, and silicon oxide, materials having an exothermic effect, such as aluminum nitride, silicon carbide, etc., can also be used. Compounds, silicon nitrides, boron nitrides, boron phosphides, etc. The barrier layer 20, in addition to the barrier metal, can alleviate the effect of thermal shrinkage of the spacer 18 formed of a low-dielectric material by having an exothermic effect.

In addition, metals containing, for example, a rare earth element (eg, at least one of cerium, ytterbium, samarium, erbium, yttrium, lanthanum, cadmium, dysprosium, and neodymium), and nitrogen, silicon, aluminum, and oxygen can also be used. s material. A conductive layer such as titanium nitride or tantalum nitride may also be formed. When forming a conductive barrier layer, determine the thickness and shape of the barrier layer so that the actual resistance of the wiring does not increase.

The barrier layer formed of such a material can be formed, for example, by CVD, various coating methods, sputtering, vapor deposition, and the like. The barrier layer 20 may be a single-layer structure or a multi-layer structure.

The spacer 18 is at least partially covered with a protective film 21 that prevents passage of substances such as liquid components and gases, or metals. Since the spacer 18 formed of a low-dielectric material is easily intruded by substances, the low-dielectric performance of the spacer 18 will be reduced due to the intrusion of substances during the manufacturing process or the like. The spacer 18 is at least partially covered with the above-mentioned protective film 21, so that the low dielectric properties of the spacer 18 can be reliably maintained, and the capacity of the wiring can be reduced. Generally speaking, the mechanical properties of low dielectric constant materials are brittle, and the above-mentioned protective film also enhances the mechanical properties. Since the diffusion of substances between the spacers 18 is suppressed, the influence of the substances passing through the spacers 18 on other regions is avoided.

Examples of materials for forming the protective film 21 include ceramics, silicon nitride, silicon oxynitride, silicon oxide, and the like. When forming a film at the corners of the spacer 18, it is preferable to use inorganic polymers and organic polymers with high flexibility other than inorganic spin-on-glass, organic spin-on-glass, and PSG (phosphate glass).

When forming the spin-on-glass film, the above-mentioned supercritical drying method can be used. By using the supercritical drying method, the coating and film quality can be further improved.

The protective film 21 formed of such a material can be formed by using various coating methods such as a spin coating method, a dipping method, a dispenser coating method, and a reflow method. The protective film 21 may have a single-layer structure or a multi-layer structure.

A protective film 21 may also be formed instead of the barrier layer 20 described above. That is, the barrier layer 20 can be omitted by covering the spacer 18 with the protective film 21 including the side facing the active element 16 . At this time, the protective film 21 may be formed using the material used to form the barrier layer 20 described above.

In this way, in the electro-optical device 10 of the present invention, by forming the spacer 18 from a low-permittivity material, the parasitic capacity generated between the conductive parts is reduced, and the operation speed is increased. When the operating speed is increased, in addition to considering the parasitic capacity, the reduction of the wiring resistance must also be considered, and the wiring structure needs to be designed as a whole. The wiring board 11 of the present invention also includes the case where a low-permittivity material is used for parts other than the spacer.

An example in which the electro-optical device and wiring board of the present invention are applied to an active matrix display device using an organic EL element will be described below. In each of the drawings referred to, the sizes of layers and components may be reduced in order to make them recognizable on the drawings, and may be different from actual ones.

FIG. 2 is a schematic diagram of the structure of an organic EL display device according to an embodiment of the present invention. This organic EL display device 100 adopts an active driving method using TFTs as active elements.

The structure of the display device 100 is that on the matrix material 121, the following laminated layers are sequentially formed, that is, an active element part 146 including a TFT as an active element, a light emitting layer, a positive hole transport layer, and a functional film including an electron transport layer. The organic EL element 140, the cathode 154, the sealing portion 147, and the like.

As the host material 121, a glass substrate is used in this example. In addition, various known host materials used in electro-optical devices and wiring boards, such as silicon substrates, quartz substrates, ceramic substrates, metal substrates, plastic substrates, and plastic film substrates, can be used.

On the matrix material 121, a plurality of pixel regions 102 as light-emitting regions are arranged in a matrix. When performing color display, for example, the pixel regions 102 corresponding to the respective colors of red (Red), green (Green), and blue (Blue) are arranged in a matrix. Specifies a parallel arrangement.

In each pixel region 102, a pixel electrode 141 is arranged, and beside it, a signal line 132, a common supply line 133, a scanning line 131, and scanning lines for other pixel electrodes not shown are arranged. The planar shape of the pixel region 102 may be other shapes such as a circle, an oval, etc. in addition to the illustrated rectangle. For example, when forming the light-emitting layer constituting the organic EL element and the charge transport layer such as the electron or positive hole transport layer using a liquid phase process such as the inkjet method, in order to form the above-mentioned layers uniformly above the pixel electrode, it is preferable to remove the rounded corners. shape such as oval or oval.

The sealing part 147 is a part that prevents the intrusion of water and oxygen and prevents the oxidation of the cathode 154 or the organic EL element 140. 148. As a material of the sealing resin, for example, a thermosetting resin or an ultraviolet curable resin is used, and it is preferable to use an epoxy resin which is a thermosetting resin. The sealing plate 148 may be formed of glass or metal, and the base material 121 and the sealing substrate 148 are sealed by a sealant. A desiccant is arranged inside the matrix material 121 . The space formed therebetween forms the N ₂ gas filling layer 149 filled with N ₂ gas.

FIG. 3 shows a circuit configuration of the display device 100 .

In FIG. 3 , a plurality of scanning lines 131 , a plurality of signal lines 132 extending in a direction intersecting with the scanning lines 131 , and a plurality of common supply lines 133 extending in parallel with the signal lines 132 are arranged on a base material 121 . Corresponding to each intersection of the scanning line 131 and the signal line 132, the above-mentioned pixel region 102 is formed.

The signal line 132 is connected to the data-side drive circuit 103 including, for example, a shift register, a potentiometer, a video line, and an analog switch. The scanning line 131 is connected to the scanning-side driving circuit 104 including a shift register and a potential shifter.

In the pixel area 102, there is provided a first TFT 142 for supplying a scanning signal to the gate electrode switch through the scanning line 131, a holding capacity 145 for supplying an image signal from the signal line 132 is held by the TFT 142, and a storage capacity 145 for holding the image signal is held by the holding capacity 145. The second TFT 143 for driving the image signal supply gate electrode, when the TFT 143 is electrically connected to the common power supply line 133, the pixel electrode 141 (anode) through which the driving current flows from the common common power supply line 133, and the pixel electrode 141 and The organic EL element 140 is sandwiched between the counter electrodes 154 (cathode). The organic EL element 140 is a layer containing an organic electroluminescence material as an electro-optic material, and the structure of the organic EL device includes a pixel electrode 141 , a cathode 154 , and the organic EL element 140 .

In the pixel area 102, when driving the scanning line 131 to turn on the first TFT 142, the potential of the signal line 132 is kept in the holding capacity 145 at this time, and the conduction state of the second TFT 143 is determined according to the state of the holding capacity 145 . The organic EL element 140 is supplied from the common supply line 133 through the pixel electrode 141 according to the amount of current in the on state of the TFT at that time. The light emission intensity of the organic EL element 140 is determined according to the amount of current supplied at this time.

4 (a), (b) is a schematic diagram of the cross-sectional structure of the pixel region 102 of the organic EL device, (a) represents the so-called high emission (TOP emission) type, (b) represents the so-called reverse emission type.

In Fig. 4 (a), the structure of the high emission type organic EL device is that the light emitted by the organic EL element 140 is emitted from the side opposite to the host material 121 provided with the TFT 143. Therefore, the matrix material 121 may be transparent or opaque.

As the opaque base material, there are, for example, thermosetting resins, thermoplastic resins, etc., in addition to insulating treatments such as surface oxidation of ceramics such as alumina and metal sheets such as stainless steel. The pixel electrode 141 is preferably formed of a reflective film such as a metal film. In FIGS. 4( a ) and ( b ), in this example, the pixel electrode 141 is used as an anode, and the counter electrode 154 is used as a cathode, but the anode and cathode may be interchanged.

In Fig. 4 (b), the structure of the reverse emission type organic EL device is that the light emitted by the organic EL element 140 is emitted from the host material 121 side where the TFT 143 is provided. For this purpose, a transparent or translucent material is used as matrix material 121 . Examples of transparent or translucent base materials include glass substrates, quartz substrates, resin substrates (plastic substrates, plastic film substrates), etc., and inexpensive soda-lime glass substrates are preferably used. When using a soda-lime glass substrate, coating it with silicon oxide can protect the soda-lime glass, which is weak in acid and alkali resistance, and improve the flatness of the base material. It is also possible to control the wavelength of emitted light by arranging a color filter film, a color-changing film containing a luminous substance, or a dielectric reflective film on a base material.

Reference numeral 281 is a spacer (storage member) provided at the boundary of the pixel region 102 . The spacer 281 has a function of preventing materials of adjacent organic EL elements 140 from mixing with each other when forming the organic EL elements 140 . In this figure, the structure of the spacer 281 is that the length of the top side is smaller than the length of the bottom side, and it is in the shape of a cone. It can also form a structure in which the length of the top side is greater than or equal to the length of the bottom side.

In the organic EL device of the reverse emission type, since the light emitted by the light-emitting layer 286 is formed, it is emitted from the side of the host material 121 provided with the TFT 143, so the effective emission of light is used as the purpose, so it is avoided to directly place the light on the organic EL element. TFT 143 is arranged under 140, preferably TFT 143 is arranged under spacer 281.

FIG. 5 shows an embodiment of the planar structure of the spacer 281 .

The spacer 281 is located at the boundary of the plurality of pixel regions 102 , is formed in a row corresponding to the plurality of pixel regions 102 , and has an opening.

In FIG. 5( a ), the spacers 281 are provided in a grid pattern corresponding to the plurality of pixel regions 102 arranged in a matrix. In FIG. 5( b ), the spacers 281 are provided in a line shape corresponding to the plurality of pixel regions 102 arranged in a matrix. In this example, the spacer 281 forms a grid-like planar structure as shown in FIG. 5( a ). The arrangement of the pixel regions 102 and the planar shape of the spacers 281 are not limited thereto. For example, a so-called triangular arrangement of pixel regions and their corresponding shapes may also be formed. It can also be based on the shape of the pixel electrode 154 shown in FIG. 2 above. The shape of the spacer 281 can also be determined according to the shape of the pixel electrode 154 shown in FIG. 2 above. For example, when the pixel electrode has a shape such as a circle or an ellipse with corners removed, the spacer 281 matches it and also forms a shape without corners.

Fig. 6 is an enlarged cross-sectional structural view of a high emission type organic EL device.

In FIG. 6, the organic EL device has a matrix material 121, a pixel electrode 141 (anode) formed of a transparent electrode material such as indium tin oxide (ITO), a positive hole transport guide 285 that can transport positive holes from the pixel electrode 141, and an electro-optical substance. A light-emitting layer 286 (organic EL layer) of an organic EL material, an electron transport layer 287 disposed on the light-emitting layer 286, a cathode 154 (counter electrode) disposed on the electron transport layer 287, and a matrix material 121 formed on TFTs 142,143. The cathode 154 is formed to cover the entire element, forms a pair with the pixel electrode 141 , and plays a role of injecting electrons into the organic EL element 140 . The cathode 154 may be a single-layer structure or a multi-layer structure. Examples of materials for forming the cathode 154 include aluminum (Al), magnesium (Au), silver (Ag), calcium (Ca), and lithium fluoride. These materials may be used alone, or these single materials may be used in the form of a laminated film or an alloy.

The TFTs 142, 143, in this example, both form n-channel type. In addition, the TFTs 142 and 143 are not limited to both being n-channel type, and TFTs in which both or either one are p-channel type may be used.

The TFT 142, 143 has, for example, a semiconductor film 204, 205 formed of silicon or the like formed on the underlying protective film 201 by providing an underlying protective film 201 mainly composed of _SiO2 on the surface of the base material 121, a cover semiconductor film 204, 205, the gate insulating film 220 disposed on the upper layer of the bottom protective film 201, and the gate electrodes 229 and 230 disposed on the upper interior of the gate insulating film 220 and opposite to the semiconductor films 204 and 205, covering the gate electrodes 229 and 230, set The first interlayer insulating film 250 on the upper layer of the gate insulating film 220, holes are formed on the entire gate insulating film 220 and the first interlayer insulating film 250, and the source electrode 262 connected to the semiconductor films 204, 205 through the contact hole, 263. Set the gate electrodes 229, 230 at positions opposite to the source electrodes 262, 263, make holes on the entire gate insulating film 220 and the first interlayer insulating film 250, and connect with the semiconductor film 204 through the contact holes. The drain electrodes 265, 266 connected to , 205, and the second interlayer insulating film 270 provided on the first interlayer insulating film 250 cover the source electrodes 262, 263 and the drain electrodes 265, 266.

In the case of a high emission type, it is preferable to form the second interlayer insulating film 270 into a planarization film, so that random reflection of light can be suppressed.

The pixel electrode 141 is arranged on the upper surface of the second interlayer insulating film 270 , and is connected to the pixel electrode 141 and the drain electrode 266 through a contact hole 275 provided on the second interlayer insulating film 270 .

In addition, when the materials of the first interlayer insulating film 250 and the second interlayer insulating film 270 are different from each other, as shown in the figure, the contact hole provided on the first interlayer insulating film 250 and the contact hole provided on the second interlayer insulating film 270 are different from each other. The contact holes 275 on the film 270 are preferably formed so as not to overlap each other.

Within the semiconductor films 204 and 205 , the gate insulating film 220 is interposed, and the overlapping regions with the gate electrodes 229 and 230 are defined as track regions 246 and 247 . In the semiconductor films 204, 205, on the source side of the channel regions 246, 247. Source regions 233, 236 are provided, and on the drain side of the channel regions 246, 247, drain regions 234, 235 are provided. Inside, the source regions 233 and 236 are connected to the source electrodes 262 and 263 through contact holes formed in the gate insulating film 220 and the first interlayer insulating film 250 . On the other hand, drain regions 234 and 235 are connected to drain electrodes 265 and 266 formed in the same layer as source electrodes 262 and 263 through contact holes formed in gate insulating film 220 and first interlayer insulating film 250 . The pixel electrode 141 is electrically connected to the drain region 235 of the semiconductor film 205 through the drain electrode 266 .

The surface of the second interlayer insulating film 270 is provided between the portion other than the organic EL device and the cathode 154, and a spacer 281 is provided as a third insulating layer formed of a low-permittivity material such as silicon oxide aerogel. Spacer 281 is formed of a material with a low dielectric constant, so that the parasitic capacitance can be suppressed to a low level.

Between the spacer 281 and the second interlayer insulating film 270, a barrier layer 271 formed of silicon nitride, silicon nitride oxide, titanium nitride, tantalum nitride, or the like is provided. The barrier layer 271 prevents metals (for example, alkali metals (mobile ions)) passing through the spacer 281 from intruding into the TFTs 142, 143.

The side surface and upper surface of the spacer 281 are covered with a protective film 272 formed of an inorganic polymer, an organic polymer, or the like. The protective film 273 can prevent substances such as liquid components and gases, or metals from intruding into the spacer 281 . Diffusion of substances between the spacers 281 is suppressed by the protective film 272 . In the spacer 281 , the covered area formed by the protective film 272 is not limited to what is shown in the figure. For example, the protective film 272 can be used to completely cover the spacer 281 .

Referring to FIG. 7-FIG. 11, the manufacturing method of the electro-optical device (including the manufacturing method of the wiring board) of the present invention will be described with reference to the embodiment of the process for manufacturing the display device having the above-mentioned organic EL device. Among them, the above-mentioned organic EL device including TFT 142, 143 and the process of manufacturing N-type and P-type TFTs for driving circuits will be described simultaneously.

First, as shown in FIG. 7(a), for the host material 121, a silicon oxide film with a thickness of 200-500 nm is formed by plasma CVD using FEOS (tetraethoxysilane) and oxygen as raw materials as required. The bottom protective film 201. As the underlying protective film, a silicon nitride film or a silicon oxide nitride film may be provided in addition to a silicon oxide film.

Next, the temperature of the matrix material 121 is set at about 350° C., and the semiconductor film 200 formed of a 30-70 nm thick amorphous silicon film is formed on the surface of the underlying protective film by ICVD or plasma CVD. The semiconductor film 200 is not limited to an amorphous silicon film, and may be a semiconductor film containing an amorphous structure such as a microcrystalline semiconductor film. A compound semiconductor film containing an amorphous structure, such as an amorphous silicon germanium film, may also be used.

Next, the semiconductor film 200 is crystallized by laser annealing method or rapid heating method (lamp annealing method, thermal annealing method, etc.) to crystallize the semiconductor film 200 to form a polysilicon film. In the laser annealing method, for example, when an excimer laser is used, a beam with a beam length of 400 mm is used, and its output intensity is set at, for example, 200 mJ/cm ² . The second high frequency or the third high frequency of YAG laser can also be used. As for the beam, the laser intensity in the short dimension direction corresponds to 90% of the peak, and the beam is scanned by overlapping each time in each area.

Next, as shown in FIG. 7(b), by patterning using photolithography or the like, unnecessary portions of the semiconductor film (polysilicon film) 200 are removed, and island-shaped semiconductor films 202 and 203 corresponding to the TFT formation regions are formed. , 204, 205.

Next, using TEOS and oxygen as raw materials, gate insulating film 220 is formed of a silicon oxide film or nitride film (silicon oxide nitride film, etc.) with a thickness of 60 to 150 nm by plasma CVD. and cover the semiconductor film 200 . The gate insulating film 220 may have a single layer structure. A stacked structure is also possible. It is not limited to the plasma CVD method, but other methods such as a thermal oxidation method may also be used. When the gate insulating film 220 is formed by a thermal oxidation method, the semiconductor film 200 is also crystallized, and these semiconductor films can also be formed into a polysilicon film.

Next, as shown in FIG. 7(c), on the entire surface of the gate insulating film 220, a film doped with silicon or silicide, and a gate electrode containing metals such as aluminum, tantalum, molybdenum, titanium, and tungsten are formed. Conductive film 221. The thickness of the conductive film 221 is, for example, 200 nm. Next, on the conductive film 221 surface that forms gate electrode usefulness, form the masking film 222 that makes pattern use, in this state, carry out making pattern, as shown in Fig. A gate electrode 223 is formed thereon. At this time, on the sides of the N-type pixel electrode transistor and the N-type drive circuit transistor side, since the conductive film 221 for forming the gate electrode is covered by the masking film 222 for patterning, the conductive film 221 for forming the gate electrode is not exposed. will form a pattern. The gate electrode may be formed of a single-layer conductive film, or may form a laminated structure.

Next, as shown in FIG. 7( e), the gate electrode 223 of the transistor for the P-type driver circuit, the region where the transistor for the N-type pixel electrode is formed, and the region where the transistor for the N-type driver circuit is formed, the remaining gate electrode 223 is formed. The conductive film 221 for electrodes is used as a shielding film, and P-type impurity element ions (boron in this example) are implanted. The dose is, for example, about 1×10 ¹⁵ cm ^-2 . As a result, the source/drain regions 224 and 225 with a high impurity concentration, for example, 1×10 ²⁰ cm ⁻² , form a self-matching with the gate electrode 223 . Therefore, the portion covered by the gate electrode 223 without introducing impurities forms a track region 226 .

Next, as shown in FIG. 8( a), form a masking film 227 for making a pattern by a resist film or the like, safely cover the transistor side for the P-type drive circuit, and cover the TFT 10 and the N-type pixel electrode for the N-type pixel electrode. A region where the gate electrode is formed on the side of the transistor for the drive circuit.

Next, as shown in FIG. 8( b), use the masking film 227 for patterning to pattern the conductive film 221 for forming the gate electrode, and form the gate electrode 228 of the N-type pixel electrode transistor and the N-type driver circuit transistor. , 229, 230.

Next, the remaining patterning screen film 227 is implanted with n-type impurity element ions (phosphorus in this example) as it is. The dose is, for example, 1×10 ¹⁵ cm ^-2 . As a result, the masking film 227 for patterning can introduce impurities so as to match itself, and form high-concentration source/drain regions 231 , 232 , 233 , 234 , 235 , and 236 in the semiconductor films 203 , 204 , and 205 . Here, in the semiconductor films 203 , 204 , and 205 , regions where high-concentration phosphorus is not introduced are wider than regions covered by the gate electrodes 228 , 229 , and 230 . That is, in the semiconductor films 203, 204, 205, on both sides of the regions facing the gate electrodes 228, 229, 230, and between the high-concentration source-drain regions 231, 232, 233, 234, 235, 236, no lead-in high voltage is formed. Phosphorus-concentrated regions (low-concentration source/drain regions described below).

Next, the patterning mask film 227 is removed, and in this state, n-type impurity element ions (phosphorus in this example) are implanted. The dose is, for example, 1×10 ¹³ cm ^-2 .

As a result, as shown in FIG. 8(c), in the semiconductor films 203, 204, and 205, low-concentration impurities are introduced into the gate electrodes 228, 229, and 230 in a self-matching manner to form low-concentration source/drain regions 237, 238, and 239. , 240, 241, 242. In regions overlapping with gate electrodes 228, 229, 230, no impurities are introduced, and track regions 245, 246, 247 are formed.

Next, as shown in FIG. 8( d), a first interlayer insulating film 250 is formed on the surface side of the gate electrodes 228, 229, and 230, and patterned by photolithography. , forming a contact hole. As the first interlayer insulating film 250 , for example, an insulating film containing silicon such as a silicon oxide nitride film oxide film can be used. It can be a single layer or a laminated film. Furthermore, heat treatment is performed in an atmosphere containing hydrogen to terminate the unpaired bonds of the semiconductor film with hydrogen (hydrogenation). Hydrogenation can also be performed using hydrogen excited by a plasma.

Next, thereon, a conductive film 251 for a source electrode and a drain electrode is formed using a metal film such as an aluminum film, a chromium film, or a tantalum film. The thickness of the conductive film 251 is, for example, about 200-300 nm. The conductive film may be a single layer or a laminated film.

Next, form the screen film 252 that pattern is used on the position of source electrode, drain electrode, simultaneously, carry out patterning, form source electrode 260,261,262,263 shown in Figure 8 (e) and drain electrode 264 simultaneously , 265, 266.

Next, as shown in FIG. 9(a), a second interlayer insulating film 270 made of silicon nitride or the like is formed. The thickness of the second interlayer insulating film 270 is, for example, 1-2 μm. As a material for forming the second interlayer insulating film 270, a light-transmitting material such as a silicon oxide film or an organic resin is used. As the organic resin, acrylic, polyimide, polyamide, BCB (phenylcyclobutene), or the like can be used.

Next, as shown in FIG. 9( b ), the second interlayer insulating film 270 is etched away to form a contact hole 275 reaching the drain electrode 266 .

Next, as shown in FIG. 9( c), for example, ITO and _SnO formed doped with fluorine are buried in the contact hole 275, and a film is further formed from a transparent electrode material such as ZnO and polyaniline to form a source and drain region 235. , 236 are electrically connected to the pixel electrode 141 . This pixel electrode 141 is used as an anode of the EL element.

Next, as shown in FIG. 10( a ), a barrier layer 271 is formed. The position where barrier layer 271 is formed is the position where spacer 281 to be formed later is located adjacent to pixel electrode 141 on second interlayer insulating film 270 . As a material for the barrier layer 271 , for example, silicon nitride, silicon nitride oxide, titanium nitride, tantalum nitride and the like can be used. The method for forming the barrier layer 271 can be appropriately selected depending on the material, for example, CVD, coating, sputtering, vapor deposition, and the like. For the barrier layer 271, for example, a material film is formed over the entire second interlayer insulating film 270 and the pixel electrode 141, and then the material film is patterned by photolithography. The opening portion of the barrier layer 271 is arranged corresponding to the formation position of the pixel electrode 141 . A portion of the barrier layer 271 may overlap the peripheral portion of the pixel electrode 141 when formed.

Next, as shown in FIG. 10( b ), a spacer 281 is formed on the barrier layer 271 using a low-permittivity material such as silica aerogel or porous silica. For example, when using silica aerogel, as described above, the wet gel is prepared by the sol-gel method, the wet gel is aged, and the wet gel is dried by the supercritical drying method to obtain the aerogel. In the supercritical drying process, a silicon oxide airgel layer is formed on the matrix material 121, and then patterned by etching and photolithography to obtain a spacer 281 of a predetermined shape. Also, it is preferable to form the pattern so that the underside of the spacer 281 fits within the barrier layer 271 .

Next, as shown in FIG. 10(c), a protective film 272 is formed using materials such as inorganic polymers and organic polymers. The protective film 272 formed at this time can cover the top and side surfaces of the spacer 281 . Protective film 272. The spacer 281 may be formed by coating only part of it, or after forming a film on the entire surface of the device, it may be patterned by photolithography or the like. Utilizing the protective film 272 can enhance the mechanical properties of the spacer 281 , and at the same time prevent substances from intruding into the spacer 281 in a later process. When the bottom surface of the spacer 281 is formed narrower than the barrier layer 271, the entire wall of the spacer 281 will be covered by the protective film 272 and the barrier layer 271, which can effectively prevent substances from invading into the spacer 281 and between the spacer 281 material diffusion. The material for forming the positive hole transport layer described next may be used as the protective film 272 when the liquid material is disposed at the opening position of the spacer 281 . Alternatively, by imparting a desired affinity to the liquid material by surface treatment such as plasma treatment, and controlling the affinity of the protective film to the liquid material, the liquid material can be easily arranged and the flatness of a film formed from the material can be improved.

Next, as shown in FIG. 11( a ), a positive hole transport layer 285 is formed to cover the pixel electrode 141 . In the formation of the positive hole transport layer 285, the forming material may be ejected onto the pixel electrode 141 as ejected liquid droplets, for example, using an ink ejecting device. Thereafter, drying treatment and heat treatment are performed to form the positive hole transport layer 285 on the pixel electrode 141 . In forming a layer using an inkjet method, for example, nozzles H1 formed on an inkjet head are arranged to face the pixel electrodes 141, and materials are ejected from the nozzles H1. A spacer 281 is formed around the pixel electrode 141, and the nozzle H1 and the matrix material 121 are relatively moved to spray toward the pixel electrode 141, and the nozzle H1 is controlled to spray the liquid amount per drop.

As the ejection technology of the ink ejection method, there are a charge control method, a pressure vibration method, an electromechanical conversion method, an electrothermal conversion method, an electrostatic attraction method, and the like. The charging control method is to give charge to the material by the charged electrode, and control the flight direction of the material under the deflection electrode, and spray it out from the nozzle. The pressure vibration method is to apply an ultra-high pressure of 30kg/cm ² to the material, so that the material is ejected from the nozzle end. When the control voltage is not applied, the material is directly ejected from the nozzle. When the control voltage is applied, electrostatic repulsion is caused between the materials, causing the material to scatter and cannot be ejected from the nozzle. In addition, the electromechanical conversion method utilizes the property of the piezoelectric element to receive the deformation of the pulse electric signal. Through the deformation of the piezoelectric element, the flexible material exerts pressure on the space for storing the material, so that the material is extruded from the space and released from the space. Nozzle ejects. The electrothermal conversion method uses a heater installed in the space for storing materials to rapidly vaporize the material to form bubbles, and the pressure of the bubbles is used to eject the material in the space. The electrostatic attraction method is to apply a slight pressure to the space where the material is stored, so that the material forms a meniscus at the nozzle, and in this state, the material is drawn out by applying electrostatic attraction. In addition, techniques such as the method of using an electric field to change the viscosity of the fluid, and the method of using a discharge spark to splash, etc., can be used.

When forming the positive hole transport layer 285, the luminescent layer 286, and the electron transport layer 287 by spraying droplets, it is preferable to use plasma treatment or the like to perform a lyophilic treatment on the surface of the pixel electrode 141 in advance, and to treat the surface of the spacer 281 ( The surface of the protective film 272) is subjected to lyophobic treatment.

It is preferable to form a water-free and oxygen-free atmosphere in subsequent processes including the formation process of the positive pore transport layer. For example, it is preferable to carry out in an inert gas atmosphere such as a nitrogen atmosphere or an argon atmosphere.

The material for forming the positive hole transport layer 285 is not particularly limited, and known materials can be used, such as pyrazoline derivatives, arylamine derivatives, stilbene derivatives, triphenyldiamine derivatives, and the like. Specific examples include JP-A-63-70257, JP-63-175860, JP-2-135359, JP-2-135361, JP-2-209988, JP-3-37992, JP-3-152184 described, etc., but triphenyldiamine is the most preferable, and among them, 4,4'-bis(N(3-methylphenyl)-N-phenylyl)biphenyl is the most suitable.

The positive hole injection layer may also be formed instead of the positive hole transport layer, or the positive hole injection layer and the positive hole transport layer may be formed simultaneously. At this time, as a material for forming the positive hole injection layer, there are, for example, copper phthalocyanine (CuPc), polytetrahydrothiophenylphenylene vinylene, 1,1-bis-(4-N,N-xylanilinobenzene base) cyclohexane, triple (8-hydroxyquinoline) aluminum, etc., preferably copper phthalocyanine (CuPc). When forming the positive hole injection layer and the positive hole transport layer at the same time, for example, before forming the positive hole transport layer, the positive hole injection layer is formed on the pixel electrode side, and then the positive hole transport layer is formed thereon. By forming the positive hole injection layer together with the positive hole transport layer in this way, it is possible to control the increase in driving voltage and extend the driving life (half life).

Next, as shown in FIG. 11( b ), a light emitting layer 286 is formed on the positive hole transport layer 285 . In forming the light emitting layer 286, like the positive hole transport layer 285, the forming material is ejected onto the pixel electrode 141 as ejected liquid droplets, for example, by using an ink ejecting device. Thereafter, drying treatment and heat treatment are performed to form the light emitting layer 286 on the pixel electrode 141 . When corresponding to colors, light emitting layers 286 corresponding to the respective colors of blue (B), red (R), and green (G) are formed in a predetermined arrangement.

The material for forming the light-emitting layer 286 is not particularly limited, and low-molecular organic light-emitting pigments and high-molecular light-emitting substances, that is, light-emitting substances made of various fluorescent substances and olefinic light substances, can be used. Among the conjugated polymers forming the luminescent substance, those containing an aromatic vinylene structure are preferable. As low-molecular-weight phosphors, for example, pigments such as naphthalene derivatives, anthracene derivatives, and cyanide derivatives, polymethine-based, xanthane-based, coumarin-based, and cyanine-based pigments, 8-hydroxyquinone, etc., can be used. Metal complexes of morphine and its derivatives, aromatic amines, tetraphenylcyclopentadiene derivatives, etc., or known phosphors described in JP-A-57-51781 and JP-A-59-194393.

Next, as shown in FIG. 11( c ), an electron transport layer 287 is formed on the light emitting layer 286 . In the formation process of the electron transport layer 287 , like the positive hole transport layer 285 and the light emitting layer 286 , the formation material is jetted onto the pixel electrode 141 as jetted liquid droplets, for example, using an ink jetting device. Thereafter, drying treatment and heat treatment are performed to form the electron transport layer 287 on the pixel electrode 141 .

The material for forming the electron transport layer 287 is not particularly limited, and examples include oxadiazole derivatives, anthraquinone dimethane and its derivatives, benzoquinone and its derivatives, naphthoquinone and its derivatives, anthraquinone and its derivatives , tetracyanoanthraquinone dimethane and its derivatives, fluorenone derivatives, diphenyldicyanoethylene and its derivatives, phenoquinone derivatives, metal complexation of 8-hydroxyquinoline and its derivatives things etc. Specifically, the same as the above-mentioned forming material of the positive hole transport layer, examples include JP-A-63-70257, JP-A-63-175860, JP-2-135359, JP-2-135361, JP-2-209988, The same as those described in No. 3-37992 and No. 3-152184, etc., preferably 2-(4-biphenyl)-5-(4-t-butylbenzene)-1,3,4-oxadi Azole, benzoquinone, anthraquinone, triple (8-hydroxyquinoline) aluminum.

Mixing the material for forming the positive hole transport layer 285 and the material for forming the electron transport layer 287 with the material for forming the light emitting layer 286 can also be used as a material for forming the light emitting layer. At this time, the amounts of the positive hole transport layer forming material and the electron transport layer forming material vary depending on the types of compounds used, and should be appropriately determined within the range that does not impair sufficient film-forming properties and luminescent properties in consideration of them. Usually, it is 1 to 40% by weight, preferably 2 to 30% by weight of the material for forming the light emitting layer.

Next, as shown in FIG. 11(d), a linear cathode 154 (counter electrode) is formed on the entire surface of the matrix material (121). The cathode can be a single-layer structure of monomer materials such as Al, Mg, Li, Ga, etc., or a stacked structure. Alternatively, it may be a single-layer structure of an alloy material such as Mg:Ag (10:1 alloy), or a laminated structure including a layer formed of an alloy material. Specifically, there are laminated films of Li ₂ O (0.5 nm)/Al, LiF (0.5 nm)/Al, and MgF ₂ /Al. For example, it is preferable to form a material with a small work function on the light-emitting layer side, for example, Ga, Ba, etc. can be used, and depending on the material, a thin layer of LiF or the like may be formed on the lower layer. On the upper side (closed side), a material having a higher work function than the lower side, such as Al, is used.

These cathodes 154 are preferably formed by, for example, vapor deposition, sputtering, or CVD, and are preferably formed by vapor deposition in view of preventing damage to the light-emitting layer 286 due to heat.

On the upper part of the cathode 154, an Al film or an Ag film formed by vapor deposition, sputtering, CVD, or the like is preferably used. Its thickness is preferably in the range of 100-1000nm, more preferably 200-500nm. In order to prevent oxidation, a protective layer of SiO ₂ , SiN, etc. may also be provided on the cathode 154 .

The organic EL device and TFTs for N-type and P-type driving circuits are completed by using the above process.

Finally, the matrix material 121 forming the organic EL device and the sealing substrate 148 (see FIG. 6 ) are sealed with a sealing resin. The closed process is best run in an atmosphere of inert gases such as nitrogen, argon, helium, etc. When the process is carried out in the atmosphere, defects such as pores are formed on the cathode 154, and moisture and oxygen intrude into the cathode 154 due to the defects, causing the cathode 154 to oxidize, which is not ideal.

The cathode 154 is connected to the wiring of the base material 121, and at the same time, the wiring of the circuit element part 146 (referring to FIG. 6 ) is connected to the driver IC (driver circuit) provided on the base material 121 or outside to obtain the present embodiment. The display device 100.

FIG. 12 shows another form example of the organic EL device.

The organic EL device shown in FIG. 12 is different from the above examples in that it has a sealing layer (at least one of the first sealing layer 300 , the second sealing layer 301 , and the third sealing layer 302 ) that blocks the intrusion of gases and metal ions.

The first sealing layer 300 is formed between the first interlayer insulating film 250 and the second interlayer insulating film 270 to cover the source electrodes 262, 263 and the drain electrodes 265, 266, and has a film thickness of, for example, 50-500 nm. As the material constituting the first sealing layer 300, materials such as ceramics, silicon nitride, silicon oxynitride, and silicon oxide can be used, for example. The first sealing layer 300 can prevent the TFTs 142, 143 from intrusion of moisture and alkali metals (sodium) such as from the light emitting layer 286 (EL layer).

As a material constituting the first sealing layer 300, a material having an exothermic effect can be used in addition to the effect of blocking alkali metals. As such a material, for example, one containing at least one element of B (boron), C (carbon), and N (nitrogen), and at least one element of Al (aluminum), Si (silicon), and P (phosphorus) insulating film. For example, aluminum nitride, silicon carbide, silicon nitride, boron nitride, boron phosphide, and the like can be used. Furthermore, an insulating film containing Si, Al, N, O, M (M is at least one of the rare earth elements, preferably Ce (cerium), Yb (ytterbium), Sm (samarium), Er (erbium) , Y (yttrium), La (lanthanum), Gd (gadolinium), Dy (dysprosium), Nd (neodymium), at least one element).

The second sealing layer 301 is formed between the second interlayer insulating film 270 and the pixel electrode 141, and has a film thickness of, for example, 50-500 nm. As the material constituting the second sealing layer 301, materials such as ceramics, silicon nitride, silicon oxynitride, and silicon oxide can be used, for example. The second sealing layer 301 can prevent intrusion of moisture and alkali metal (sodium) from the light emitting layer 286 (EL layer) and the like to the TFTs 142 and 143 .

As the material constituting the second sealing layer 301, the material functioning as the above-mentioned first sealing layer can be used. In addition to the effect of blocking alkali metals, it also has an exothermic effect.

When forming the second sealing layer 301, the aforementioned barrier layer 271 may be omitted.

The third sealing layer 302 is formed to cover the cathode 154 and has a film thickness of, for example, 50-500 nm. As the material constituting the third sealing layer 302, materials such as ceramics, silicon nitride, silicon oxynitride, and silicon oxide can be used, for example. The third sealing layer 302 prevents the intrusion of moisture from the outside. As the material constituting the third sealing layer 302, the materials used in the above-mentioned first sealing layer can also be used. In addition to the above-mentioned effect of blocking the alkali metal, it also has an exothermic effect. In addition, since the organic EL device shown in FIG. 18 is a high-emission type, it is preferable that the third sealing layer 302 is formed of a thick light-transmitting material.

In addition, instead of such a blocking layer, or in addition to it, a low-refractive-index layer may be formed in order to improve light extraction efficiency. The low-refractive-index layer is a layer having a light-transmitting refractive index lower than that of the matrix material 121 , and may be composed of, for example, the aforementioned silica airgel.

The refractive index of the matrix material 121 is, for example, 1.54 for glass and 1.45 for quartz. As the low-refractive index layer, other materials such as porous _SiO2 films and polymers can also be used. It is also possible to disperse a desiccant or a chemical adsorbent in the material constituting the low-refractive layer. Thereby, a sealing effect can be given to a low refractive index layer.

Fig. 13 shows another example of the form of the organic EL device.

In the above examples, the TFT 142 for switching is shown in a so-called single-gate structure, but the present invention is not limited thereto. That is, as shown in FIG. 13, a double-gate structure in which two gate electrodes 310, 311 are electrically connected by a gate line not shown in the figure can be formed, or a three-gate structure, etc., or a so-called multi-gate structure (including It has a structure in which two or more region semiconductor films are connected in series). The multi-gate structure is conducive to reducing the off-current value, and is also conducive to the enlargement of the screen.

14(a) and (b) show other circuit examples of the organic EL display device.

The circuits shown in Fig. 14(a) and (b) are circuits of the so-called current programming method for controlling the energization of the EL element by controlling the current. Figure 14(a) employs the so-called popular Miller circuit. By adopting such a circuit, the EL can be kept in a constant on-state, and the EL layer can be made to emit light stably. It is also beneficial to form a display device with a large screen.

As the material for forming the light-emitting layer, when using a polymer light-emitting material, a polymer material with a light-emitting group on the side chain can be used, preferably a conjugated structure on the main chain, preferably polythiophene, poly-p- Phenylene, polyarylene vinylene, polyfluorene and their derivatives. Among them, polyarylene vinylene and its derivatives are preferable. Polyarylene vinylene and its derivatives are preferably polymers containing repeating units represented by the following chemical formula (1), and the total repeating units are at least 50 mol%. Depending on the structure of the repeating unit, it is more preferable that the polymer contains the repeating unit represented by the chemical formula (1) to account for 70% or more of the total repeating units.

-Ar-CR=CR'-...(1)

[Wherein, Ar represents an arylene group or a heterocyclic compound group, R and R' represent hydrogen, an organic group of 1-20 carbons, a perfluoroalkyl group, and a cyano group respectively. ]

The polymer light-emitting material includes, as repeating units other than the repeating unit represented by the chemical formula (1), an aromatic compound group or a derivative thereof, a heterocyclic compound group or a derivative thereof, and groups obtained by combining them. The repeating unit represented by chemical formula (1) and other repeating units, for example, can be connected by non-conjugated units having ether groups, ester groups, amido groups, imine groups, etc., and these non-conjugated units can also be contained on the repeating units. part.

Examples of polyarylene vinylenes include PPV (poly(p-phenylene vinylene)) represented by formula (2), Mo-PPV (poly(2,5-dimethoxy-1,4-phenylene vinylene) propene)), CN-PPV (poly(2,5-dihexyloxy-1,4-phenylene-(1-cyanovinylene))), MEH-PPV (poly[2-methoxy-5-( PPV derivatives such as 2'-(ethylhexyloxy))]-p-phenylene vinylene) and the like.

In addition to the materials shown above, there are, for example, poly(p-phenylene), polyalkylfluorene, etc., preferably polyalkylfluorenes represented by chemical formula (3) (specifically, polyalkylfluorenes represented by chemical formula (4) copolymer).

[chemical 1]

[Chem 2]

The above-mentioned polymer luminescent material may be a random, block or graft copolymer, and the polymer having these intermediate structures may be, for example, a block-like random copolymer. From the consideration of obtaining polymer luminescent materials with high luminescent quantum yield, it is best to use random copolymers and block or graft copolymers with complete random copolymers. Therefore, the organic EL elements formed , from the consideration of using thin film to emit light, it is better to use polymer luminescent material with good luminescence quantum yield in solid state.

Among the above-mentioned materials, when forming the light emitting layer, materials that are liquid at the temperature at which the light emitting layer is formed, or materials that exhibit good solubility in a desired solvent, liquid materials suitable for the inkjet method, and the like can be used. As the solvent, for example, chloroform, dichloromethane, dichloroethane, tetrahydrofuran, toluene, xylene and the like are preferably used. Depending on the structure and molecular weight of the high-molecular hair material, usually 0.1 wt% or more is dissolved in these solvents.

As the polymer light-emitting material, the molecular weight is preferably 10 ³ -10 ⁷ in terms of polystyrene, and an oligomer with a molecular weight of 10 ³ or less may also be used.

The desired polymer light emitting material can be obtained by employing a synthesis method according to the desired polymer light emitting material. For example, a dialdehyde compound with 2 aldehyde groups bonded to an arene group, a compound with 2 halomethyl groups bonded to an aryl alkenyl group, and a diphosphonium salt obtained from triphenylphosphine, the Wittig React example. As another synthesis method, there is exemplified a method of removing hydrogen halide from a compound having two halomethyl groups bonded to an arylene group. Furthermore, there is an example of a phosphorus salt decomposition method in which an intermediate obtained by polymerizing a phosphorus salt of a compound having two halogenated methyl groups bonded to an arylene group in an alkali, and then heat-treated to obtain a polymer light emitting material.

Specifically, a method for synthesizing an aromatic vinylene copolymer, which is an example of the above-mentioned polymer light-emitting materials, will be described. For example, when using the polymer light-emitting material obtained by the Wittig reaction, for example, first, a bis(halogenated methyl) compound, more specifically, for example, 2,5-dioctyloxy-P-phenylenedimethyldibromide compound, in N,N-dimethylformamide solvent, react with triphenyl phosphine to synthesize phosphorus salt, the salt and diformaldehyde compound, more specifically, for example and terephthalic acid formaldehyde, for example in ethanol In this method, lithium ethoxide is used for condensation, and through this Wittig reaction, a polymer light-emitting material containing phenylene vinylene and 2,5-dioctyloxy-P-phenylene vinylene is obtained. At this time, in order to obtain a copolymer, two or more kinds of diphosphorus salts and/or two or more kinds of diformaldehyde compounds may be reacted.

[Chem 3]

Polyfluorene Copolymer

[chemical 4]

When these polymer light-emitting materials are used as materials for forming the light-emitting layer, since their purity affects the light-emitting characteristics, it is preferable to carry out separate purification treatments such as reprecipitation purification and chromatography after synthesis, for example.

When the polymer material is a material with low solubility, for example, after applying the corresponding precursor, it can be hardened by heating as shown in the chemical formula (5) to obtain the light-emitting layer. For example, in the case of a polymer light-emitting material whose light-emitting layer is composed of polyphenylene-vinylene, after disposing the phosphonium salt corresponding to the precursor on the part where the light-emitting layer is formed, the sulfonium group is detached by heat treatment, and the sulfonium group that functions as the light-emitting layer is obtained. Polyphenylene-vinylene.

Basically, any low-molecular material capable of forming the light-emitting layer can be used as long as it exhibits visible light emission. Among them, materials having an aromatic substituent are most suitable. For example, aluminum quinoline complex (Alq ₃ ) and distyryl biphenyl are generally used, and BeBq ₂ and Zn(O×Z) ₂ represented by the chemical formula (6) can be further used. In addition, there are pyrazoline dimers, quinazine carboxylic acid, phenylpyrylone perchlorate, phenylpyrylquinazine, rubene, phenanthroline europium complex, etc.

Color display can be realized by properly selecting blue, green, and red light-emitting materials from the above-mentioned representative high-molecular materials and low-molecular materials, and arranging them at predetermined positions. When arranging at a predetermined position, a mask deposition method, a printing method, an ink jet method, or the like can be used.

[chemical 5]

The host (host) is dispersed in the guest (guest) functioning as an intermediate, so-called host/guest type light-emitting layer.

In the host/guest-host type light-emitting layer, basically the guest-host material determines the light-emitting color of the light-emitting layer, and the guest-host material can be selected according to the desired light-emitting color. Materials with good fluorescence emission efficiency are generally used. Host materials, basically, materials that have an energy basis higher than the excitation state basis associated with the luminescence of the guest-host material are most suitable as host materials. In some cases, a material with high carrier mobility is required, and in this case, it can be selected from the above-mentioned polymers.

As the guest-host material showing blue light emission, for example, there are hexabenzocenes, distyryl biphenyls, etc., and as the guest-host material showing green light emission, for example, there are quinones, rubrene, etc. As a guest-host material that emits red light, as a fluorescent pigment, as a guest-host material that emits red light, there are rhodamines, for example.

The host material can be appropriately selected according to the guest-host material. To give a few examples, the host material and the guest-host material are used to form light-emitting layers of Zn(O×Z) ₂ and hexabenzocene, respectively, to obtain a light-emitting layer showing blue light.

As guest-host material, phosphorescent materials can also be used. For example, Ir(ppy) ₃ , Pt(thpy) ₂ , PtOEP, etc. represented by the chemical formula (7) are preferably used.

[chemical 6]

When the phosphorescent substance represented by the above chemical formula (7) is used as the guest-host material, it is preferable to use, for example, CBP, DCTA, TCPB, or Alq ₃ represented by the chemical formula (8) as the host material.

The host/guest-host type light-emitting layer can be formed by a co-evaporation method, or a coating method in which a liquefied host material and a guest-host material or their precursors are formed.

[chemical 7]

In the above example, the positive hole transport layer is formed as the lower layer of the light-emitting layer, and the electron transport layer is formed as the upper layer, but the present invention is not limited thereto, for example, only one of the positive hole transport layer and the electron transport layer can be formed, Instead of the positive hole transport layer, the positive hole injection layer may be formed, or only the light emitting layer may be formed alone.

Furthermore, in addition to the positive hole injection layer, the positive hole transport layer, the light emitting layer, and the electron transport layer, for example, a sealing layer is formed on the opposite electrode side of the light emitting layer to prolong the lifetime of the light emitting layer. As a material for forming such a plugging layer, for example, BCP represented by the chemical formula (9) and BAIq represented by the chemical formula (10) can be used, and BAIq is preferable in terms of longevity.

[chemical 8]

[chemical 9]

It is obvious that the electro-optical device manufactured as above can be driven by any of the active method and the passive method.

15-20 illustrate an embodiment of the electronic instrument of the present invention.

The electronic device of this example has, as a display device, the electro-optical device of the present invention such as the above-mentioned organic EL display device.

FIG. 15 is an example of a display device for displaying video images and computer-delivered text and images. In FIG. 15, reference numeral 1000 denotes a display device using the electro-optical device of the present invention. The display device main body 1000 can also correspond to a large screen by using the above-mentioned organic EL display device.

FIG. 16 shows an example of a navigation device for vehicles. In FIG. 16, reference numeral 1010 denotes a navigation device main body, and reference numeral 1011 denotes a display portion (display device) using the electric device of the present invention.

Fig. 17 shows an example of a portable image recording device (video camera). In FIG. 17, reference numeral 1020 denotes a main body of the recording device, and reference numeral 1021 denotes a display portion using the electric device of the present invention.

Fig. 18 shows an example of a mobile phone. In FIG. 18, reference numeral 1030 denotes a mobile phone main body, and reference numeral 1031 denotes a display portion (display device) using the electro-optical device of the present invention.

FIG. 19 shows an example of an information processing device such as a word processor or a personal computer. In FIG. 19, reference numeral 1040 denotes an information processing device, reference numeral 1041 denotes a main body of the information processing device, reference numeral 1042 denotes an input section such as a keyboard, and reference numeral 1043 denotes a display section using the electro-optical device of the present invention.

Fig. 20 shows an example of a watch-type electronic instrument. In FIG. 20, reference numeral 1050 denotes a watch main body, and reference numeral 1051 denotes a display portion using the electro-optical device of the present invention.

The electronic equipment shown in FIGS. 15 to 20 has the electro-optical device of the present invention as a display device, so that a display with excellent durability and quality can be realized.

The preferred embodiment of the present invention has been described above while referring to the accompanying drawings, but it cannot be said that the present invention is limited to this example. Various changes can be made according to design requirements and the like without departing from the gist of the present invention.

According to the substrate and its manufacturing method of the present invention, for example, it is possible to reduce the parasitic capacity and the like generated by the conductive portion, and realize stable performance of the substrate.

According to the electronic device and its manufacturing method of the present invention, the functional film can exhibit good performance, and because it is suitable for high-speed operation, the screen can be enlarged, and the electro-optical device can work stably for a long time.

According to the electronic equipment of the present invention, since it has the electronic device of the present invention as a display device, it can perform display operation with excellent traceability and stability.

Claims (18)

1. wiring substrate, it is characterized in that: comprise contain insulated substrate (15,121) and above above-mentioned insulated substrate set distribution (131,132,133) matrix and at the separator (18,281) of above-mentioned substrates configuration, be provided with the zone that does not form above-mentioned separator on above-mentioned matrix, the dielectric constant of above-mentioned separator is lower than the dielectric constant of above-mentioned insulated substrate.

2. wiring substrate according to claim 1 is characterized in that: the dielectric constant of above-mentioned separator (18,281) is below 3.

3. wiring substrate according to claim 1 is characterized in that: the dielectric constant of above-mentioned separator (18,281) is below 2.5.

4. according to any described wiring substrate among the claim 1-3, it is characterized in that: contain active element (16,142,143) in the above-mentioned matrix.

5. wiring substrate according to claim 4 is characterized in that: between above-mentioned active element (16,142,143) and the above-mentioned separator (18,281), be provided with the barrier layer (20,271) that inhibiting substances sees through at least.

6. according to any described distributing board among the claim 1-3, it is characterized in that: above-mentioned separator (18,281) comprise any in silica glass, alkyl siloxane polymer, alkyl silicon silsequioxane polymer, hydrogenation alkyl silicon silsequioxane polymer, the polyaryl ether on glass plate rotary press modelling film, diamond film, and fluorinated amorphous carbon element film at least a.

7. according to any described wiring substrate among the claim 1-3, it is characterized in that: above-mentioned separator (18,281) is formed by porous material.

8. according to any described wiring substrate among the claim 1-3, it is characterized in that: above-mentioned separator (18,281) contains at least a kind in the article that contain particulate in aeroge, porous matter silica, the gel that has disperseed the magnesium fluoride particulate, fluorine based polymer and the porous polymer.

9. electronic installation, have wiring substrate (11) and functional membrane (140,286), it is characterized in that: described wiring substrate comprise contain substrate (15,121) and above described matrix set distribution (131,132,133) matrix and at the slider (18,281) of above-mentioned substrates configuration, on aforesaid substrate, be provided with the zone that does not form above-mentioned separator, the dielectric constant of above-mentioned separator is lower than the dielectric constant of aforesaid substrate, and at the above-mentioned zone of above-mentioned wiring substrate, corresponding configuration feature film.

10. electro-optical device, it is characterized in that: comprise and contain substrate (15,121) set distribution (131 and above aforesaid substrate, 132,133) matrix, be configured in a plurality of pixel electrodes (141) of above-mentioned substrates, be configured in pixel electrodes top to electrode (154), at each above-mentioned a plurality of pixel electrodes with the functional membrane that contains electrooptic material (140 that disposes between to electrode, 286) and be arranged on around the above-mentioned functions film, be configured in above-mentioned to the separator (18 between electrode and the above-mentioned substrates, 281), the dielectric constant of above-mentioned separator is lower than the dielectric constant of aforesaid substrate.

11. electro-optical device according to claim 10 is characterized in that: above-mentioned electrooptic material is an electroluminescent organic material.

12. according to claim 10 or 11 described electro-optical devices, it is characterized in that: above-mentioned matrix also contains the active element (16,142,143) that is connected with pixel electrodes, and above-mentioned distribution contains signal wiring from signal to above-mentioned active element that supply with.

13., it is characterized in that according to claim 10 or 11 described electro-optical devices: above-mentioned separator (18,281) comprise any in silica glass, alkyl siloxane polymer, alkyl silicon silsequioxane polymer, hydrogenation alkyl silicon silsequioxane polymer, the polyaryl ether on glass plate rotary press modelling film, diamond film, and fluorinated amorphous carbon element film at least a.

14. according to claim 10 or 11 described electro-optical devices, it is characterized in that: above-mentioned separator (18,281) is formed by porous matter.

15. according to claim 10 or 11 described electro-optical devices, it is characterized in that: above-mentioned separator (8,281) contains at least a kind in the article that contain particulate in aeroge, porous matter silica, the gel that has disperseed the magnesium fluoride particulate, fluorine based polymer and the porous polymer.

16. electro-optical device according to claim 12 is characterized in that: between above-mentioned separator (18,281) and above-mentioned active element (16,142,143), be provided with the barrier layer (20,271) that the energy inhibiting substances sees through.

17., it is characterized in that above-mentioned separator (18,281) at least a portion is by preventing that the diaphragm that material passes through (21,272) from being covered according to claim 10 or 11 described electro-optical devices.

18. electronic instrument, has electro-optical device as display unit, it is characterized in that: described electro-optical device (10) comprises and contains substrate (15,121) set distribution (131 and above aforesaid substrate, 132,133) matrix, be configured in a plurality of pixel electrodes (141) of above-mentioned substrates, be configured in pixel electrodes top to electrode (154), at each above-mentioned a plurality of pixel electrodes with the functional membrane that contains electrooptic material (140 that disposes between to electrode, 286) and be arranged on around the above-mentioned functions film, be configured in above-mentioned to the separator (18 between electrode and the above-mentioned substrates, 281), the dielectric constant of above-mentioned separator is lower than the dielectric constant of aforesaid substrate.

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