CN1296762C - Display panel and manufacturing method thereof - Google Patents
Display panel and manufacturing method thereof Download PDFInfo
- Publication number
- CN1296762C CN1296762C CNB2004100545048A CN200410054504A CN1296762C CN 1296762 C CN1296762 C CN 1296762C CN B2004100545048 A CNB2004100545048 A CN B2004100545048A CN 200410054504 A CN200410054504 A CN 200410054504A CN 1296762 C CN1296762 C CN 1296762C
- Authority
- CN
- China
- Prior art keywords
- active device
- display panel
- pixel
- semiconductor layer
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 29
- 230000001360 synchronised effect Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 8
- 230000005855 radiation Effects 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000003760 hair shine Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
Images
Landscapes
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Recrystallisation Techniques (AREA)
Abstract
一种显示面板，具有一像素阵列区，该像素阵列区由多个以阵列方式排列的像素单元所构成；每一像素单元均具有一有源器件，并且在像素阵列区中，至少有一第一有源器件相对于一第一像素单元中的位置，不同于一第二有源器件相对于一第二像素单元中的位置。
A display panel has a pixel array area, which is composed of a plurality of pixel units arranged in an array; each pixel unit has an active device, and in the pixel array area, at least a first active device has a position relative to a first pixel unit that is different from a position of a second active device relative to a second pixel unit.
Description
Technical field
The present invention relates to a kind of display panel, particularly a kind of display panel that utilizes low temperature polycrystalline silicon (LTPS) technology.
Background technology
Thin film transistor (TFT) (thinfilm transistor is hereinafter to be referred as TFT) in the LCD (liquid crystal display is hereinafter to be referred as LCD) is intended for the control device of pixel.Generally can be distinguished into two kinds of patterns of non-crystalline silicon tft and multi-crystal TFT.Because the carrier transport factor integrated level higher, driving circuit of multi-crystal TFT is preferable, leakage current is less,, and be applicable to large-sized LCD so multi-crystal TFT more often is applied in the circuit of high operating speed.
Multi-crystal TFT can be by low temperature polycrystalline silicon (Low Temperature Poly-silicon; Abbreviation LTPS) the technology manufacturing forms.Can reduce the volume of multi-crystal TFT by the LTPS technology, and increase the aperture opening ratio (aperture ratio) of LCD, therefore, general LCD utilizes the LTPS technology to make multi-crystal TFT mostly.
Fig. 1 shows prior art display panel synoptic diagram.Display panel 10 has a plurality of pixel regions of arranging with matrix-style 12.In the LTPS technology,, therefore, can on all pixel regions 12, form an amorphous semiconductor layer earlier in order in pixel region 12, to form multi-crystal TFT.Utilize laser to shine the amorphous semiconductor layer of each row on pixel region 12 in regular turn then, the amorphous semiconductor layer can be converted to polycrystal semiconductor layer.At last, again by other processing step, in each pixel region, form multi-crystal TFT 14.
Because the factor on the equipment makes the width of laser be restricted.Therefore, general laser is each only can shine capable pixel region.Then, the mode with stepping moves again, irradiation next line pixel region.But the each intensity of launching of laser during difference, will make will be formed the multi-crystal TFT of different qualities by the pixel region that different laser shone, thereby ripples lines (mura) phenomenon will take place to some extent.
But shone by identical laser with the multi-crystal TFT in delegation's pixel region, feasible multi-crystal TFT with delegation has identical characteristic.When not simultaneously with the characteristic of the multi-crystal TFT of the characteristic of the multi-crystal TFT of delegation and other row, then will form shallow water wave line (line mura) phenomenon, thereby the display quality of reduction LCD.
Summary of the invention
The objective of the invention is to avoid TFT to have identical characteristic, in order to prevent the generation of shallow water wave line phenomenon with in delegation or the same row pixel region.
In order to achieve the above object, the invention provides a kind of display panel, have a pixel array region (pixelarray zone).Pixel array region comprises the pixel cell of arranging with array way (pixel cell).Each pixel cell all has an active device (active device), and in pixel array region, have one first active device at least with respect to the position in one first pixel cell, be different from one second active device with respect to the position in one second pixel cell.
The present invention provides a kind of manufacture method in addition, is applicable to that one has the display panel of pixel array region.This pixel array region is in order to be provided with a plurality of pixel cells of arranging with array way, and each pixel cell has all defined an active device region (active device area).At first, on display panel, form an amorphous semiconductor (amorphous semiconductor) layer.Handle the amorphous semiconductor layer with a laser beam flying again, make it be converted into a polycrystalline (poly) semiconductor layer.When a plurality of pixel cell that the each institute of laser beam synchronous processing arrives, has an active device region at least not by laser beam institute synchronous processing.Respectively in each active device region, form at least one active device at last.
For above and other objects of the present invention, feature and advantage can be become apparent, cited below particularlyly go out preferred embodiment, and conjunction with figs., be described in detail below:
Description of drawings
Fig. 1 shows prior art display panel synoptic diagram.
Fig. 2 shows display panel first embodiment of the present invention.
Fig. 3 shows display panel second embodiment of the present invention.
Fig. 4 shows display panel the 3rd embodiment of the present invention.
Fig. 5 shows display panel the 4th embodiment of the present invention.
Fig. 6 shows display panel manufacture method of the present invention.
Description of reference numerals:
10,20: display panel;
12: pixel region;
14：TFT；
22: pixel array region;
P
1-1～P
10-3: pixel cell;
D
1-1～D
10-1: active device;
G1-G6: group;
R
1-1～R
10-3: active device region;
24,26,54: the zone.
Embodiment
The invention is characterized in the position of change, when making laser radiation, have at least a TFT can not shone by laser with delegation or same row pixel region with the TFT in delegation or the same row pixel region.
Fig. 2 shows display panel first embodiment of the present invention.As shown in the figure, display panel 20 has a pixel array region (pixel array zone) 22.And pixel array region 22 is made of a plurality of pixel cells of arranging with array way (pixel cell).This for convenience of description for the purpose of, the pixel cell with 3 * 10 is an example.
Pixel cell P
1-1～P
10-3Has an active device (active device) D separately
1-1～D
10-3, for example TFT or other device.The position of active device in corresponding pixel cell with delegation can be identical or different with other position of active device in corresponding pixel cell of going, in the present embodiment, first row, second position of active device in corresponding pixel cell capable, that reach the third line are identical.For example, active device D
1-1At pixel cell P
1-1Position, active device D
1-2At pixel cell P
1-2Position, and active device D
1-3At pixel cell P
1-3The position all identical.
But in the pixel cell with delegation, the position of arbitrary active device in corresponding pixel cell is different with the adjacent position of active device in corresponding pixel cell, with the first row pixel cell P
1-1～P
10-1Be example, active device D
1-1～D
10-1From top to bottom, arrange to the right in regular turn, and arbitrary active device in corresponding pixel cell the position and the gap of the adjacent position of active device in corresponding pixel cell be certain value, this definite value can be arbitrary value.
Fig. 3 shows display panel second embodiment of the present invention.As shown in the figure, with pixel cell P
1-1～P
10-3Be divided into the G1～G6 of group, the position of active device in arbitrary group in corresponding pixel cell can be identical or different with the position of active device in corresponding pixel cell in other group, in the present embodiment, the position of the active device of the G1～G6 of group in corresponding pixel cell is identical.
But in same group, the position of arbitrary active device in corresponding pixel cell is different with the adjacent position of active device in corresponding pixel cell.With the G1 of group is example, and arrange according to an ad hoc fashion position of active device, and in the present embodiment, the position of active device is arranged left to last in regular turn by last, and the position of each active device and the position of adjacent active device also have a fixing difference.
Fig. 4 shows display panel the 3rd embodiment of the present invention.Similarly, also can be with pixel cell P
1-1～P
10-3Be divided into the G1～G6 of group, different with Fig. 3 be in, the position of the active device in each group is arranged in the corresponding pixel cell with random fashion.
In addition, the active device position in the pixel cell also can be as shown in Figure 5, and the position of the active device of each row in corresponding pixel cell is identical with the position of active device in corresponding pixel cell of other row.But in the pixel cell of same row, the position of arbitrary active device in corresponding pixel cell is different with the adjacent position of active device in corresponding pixel cell.In the present embodiment, the active device of same row is upwards arranged in regular turn by left-to-right in corresponding pixel cell.
Fig. 6 shows display panel manufacture method of the present invention.Please also refer to the panel construction of Fig. 2.At first, definition one has pixel cell P on display panel 20
1-1～P
10-3Pixel array region 22 (S110), wherein, pixel cell P
1-1～P
10-3Arrange with matrix-style.
Then at pixel cell P
1-1～P
10-3In, each self-defined active device region R
1-1～R
10-3(S120).As shown in Figure 2, in delegation's pixel cell, the position of arbitrary active device region in corresponding pixel cell is also inequality with the adjacent position of active device region in corresponding pixel cell.With the first row pixel cell P
1-1～P
10-1Be example, active device region R
1-1～R
10-1In corresponding pixel cell, arrange to the right in regular turn, and the position of arbitrary active device region and adjacent active device region has certain value, is assumed to be 20 μ m.
In LTPS technology, need on pixel array region 22, to form an amorphism (amorphous) semiconductor layer (S130).Then, the amorphous semiconductor layer (S140) with on the laser radiation part pixel array region 22 can convert the amorphous semiconductor layer to polycrystalline (poly) semiconductor layer.
Pixel array region 22 with Fig. 2 is an example, supposes, laser shines the zone 24 in the pixel array region 22 earlier.Because the amorphous semiconductor layer in the zone 24 will be arrived by laser radiation simultaneously, so zone 24 can be called laser synchronous processing district.In addition, laser is with the amorphous semiconductor layer in the line direction irradiation area 24 of pixel array region 22, and therefore, the direction of laser radiation can be described as the synchronous processing direction.
When the amorphous semiconductor layer in the intact zone 24 of laser radiation, laser will be in the mode of stepping, toward moving right.When supposing that minor increment that laser moves is 20 μ m, then just can be set at 20 μ m with the minor increment to each other of the active device region in delegation's pixel cell.
Follow laser by the zone 24 past 20 μ m that move right, in order to the amorphous semiconductor layer in the irradiation area 26.Because the amorphous semiconductor layer in the zone 26 is shone by same laser simultaneously, therefore, also is called laser synchronous processing district.
Then, behind the amorphous semiconductor layer in the intact zone 26 of laser radiation, laser can continue to move right, in order to shine other amorphous semiconductor layer.Because the position difference of the active device region in each pixel cell, therefore, the each active device region that shines of laser is also incomplete same.
In order to obtain good crystallization effect, laser can reirradiation amorphous semiconductor layer.Suppose that the width of laser is 400 μ m, the distance in each active device interval is 20 μ m, and when laser moved 20 μ m at every turn, then each active device region can be irradiated to 20 times.But each active device region has at least once with adjacent active device region and is shone by different laser, so the crystallization degree of each active device region just can not be identical.
At last, utilize semiconductor technologies such as mask and etching, in active device region, form active device (S150), for example TFT or other active device.Because the crystallization degree of each active device region is also inequality, therefore, formed TFT just has different characteristics in delegation's active device region.
In addition, laser treatment direction in Fig. 2 is with the amorphous semiconductor layer in each zone of line direction synchronous processing of pixel array region 22, but also can be as shown in Figure 5, column direction along pixel array region 22, amorphous semiconductor layer in elder generation's processing region 54, then stepping one fixed range down again continues the amorphous semiconductor layer in the next zone of irradiation.
With the display panel of the present invention and prior art relatively, please refer to Fig. 1, owing to shone by identical laser with the TFT in delegation's pixel region, therefore the characteristic with the TFT of delegation is identical.When the intensity of laser is inhomogeneous, then cause with the TFT characteristic of delegation differently with TFT characteristic of other row, therefore just cause water ripple phenomenon to occur in certain delegation of display panel easily.
Review the present invention, please refer to Fig. 2, because it is laser can't once shine simultaneously with all active device regions in delegation's pixel cell, therefore also inequality each other with the characteristic of the active device of delegation's active device region.When water ripple phenomenon takes place, can't make that water ripple phenomenon all takes place the active device with delegation, and then prevent the generation of shallow water wave line phenomenon.
Though the present invention with preferred embodiment openly as above; yet; it is not in order to limit the present invention; those skilled in the art; under the premise without departing from the spirit and scope of the present invention; certainly can do some and change and retouching, so protection scope of the present invention should be as the criterion with the scope that appending claims was defined.
Claims (9)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100545048A CN1296762C (en) | 2004-07-22 | 2004-07-22 | Display panel and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100545048A CN1296762C (en) | 2004-07-22 | 2004-07-22 | Display panel and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1588212A CN1588212A (en) | 2005-03-02 |
| CN1296762C true CN1296762C (en) | 2007-01-24 |
Family
ID=34603119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100545048A Expired - Lifetime CN1296762C (en) | 2004-07-22 | 2004-07-22 | Display panel and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1296762C (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0895057A (en) * | 1994-09-28 | 1996-04-12 | Fujitsu Ltd | Liquid crystal display panel and manufacturing method thereof |
| JPH1195235A (en) * | 1997-09-19 | 1999-04-09 | Alps Electric Co Ltd | Liquid crystal display device |
| JPH11352520A (en) * | 1998-06-08 | 1999-12-24 | Casio Comput Co Ltd | Active drive device |
| CN1257304A (en) * | 1998-12-12 | 2000-06-21 | 三星电子株式会社 | Thin film transistor array panel for liquid crystal display and making method thereof |
| CN1414422A (en) * | 2001-10-25 | 2003-04-30 | Lg.菲利浦Lcd株式会社 | Array panel of liquid crystal display device and its manufacture method |
| US20040125251A1 (en) * | 2002-12-31 | 2004-07-01 | Lg.Philips Lcd Co., Ltd. | Liquid crystal display panel and method of fabricating the same |
| CN1555506A (en) * | 2002-05-27 | 2004-12-15 | ���ǵ�����ʽ���� | Thin Film Transistor Panels for Liquid Crystal Displays |
-
2004
- 2004-07-22 CN CNB2004100545048A patent/CN1296762C/en not_active Expired - Lifetime
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0895057A (en) * | 1994-09-28 | 1996-04-12 | Fujitsu Ltd | Liquid crystal display panel and manufacturing method thereof |
| JPH1195235A (en) * | 1997-09-19 | 1999-04-09 | Alps Electric Co Ltd | Liquid crystal display device |
| JPH11352520A (en) * | 1998-06-08 | 1999-12-24 | Casio Comput Co Ltd | Active drive device |
| CN1257304A (en) * | 1998-12-12 | 2000-06-21 | 三星电子株式会社 | Thin film transistor array panel for liquid crystal display and making method thereof |
| CN1414422A (en) * | 2001-10-25 | 2003-04-30 | Lg.菲利浦Lcd株式会社 | Array panel of liquid crystal display device and its manufacture method |
| CN1555506A (en) * | 2002-05-27 | 2004-12-15 | ���ǵ�����ʽ���� | Thin Film Transistor Panels for Liquid Crystal Displays |
| US20040125251A1 (en) * | 2002-12-31 | 2004-07-01 | Lg.Philips Lcd Co., Ltd. | Liquid crystal display panel and method of fabricating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1588212A (en) | 2005-03-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7459355B2 (en) | Drive circuit of active matrix device and manufacturing method thereof | |
| US20060131587A1 (en) | Method of manufacturing an active matrix substrate and an image display device using the same | |
| US7476629B2 (en) | Beam irradiation apparatus, beam irradiation method, and method for manufacturing thin film transistor | |
| CN1638038A (en) | Laser beam pattern mask and crystallization method using the same | |
| CN1828832A (en) | Laser device and method for manufacturing thin film transistors therewith | |
| CN1296762C (en) | Display panel and manufacturing method thereof | |
| CN1696763A (en) | Laser irradiation method, laser irradiation apparatus | |
| CN101034665A (en) | Laser annealing device and laser annealing method | |
| CN1612287A (en) | Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device | |
| WO2010032519A1 (en) | Motherboard, motherboard manufacturing method and device board | |
| US9209050B2 (en) | Laser crystallization system and method of manufacturing display apparatus using the same | |
| US20220037438A1 (en) | Substrate, method for manufacturing substrate, and display panel | |
| KR102480839B1 (en) | Laser annealing apparatus and method of driving the same | |
| US10862062B2 (en) | Method of forming transparent correlated metal electrode | |
| CN1622178A (en) | Active matrix display and method of manufacturing the same | |
| US8513065B2 (en) | Method for manufacturing display device | |
| US9099390B2 (en) | Crystallization apparatus, crystallization method, organic light-emitting display apparatus and method of manufacturing organic light-emitting display apparatus | |
| CN1716071A (en) | Crystallizing method, thin-film transistor manufacturing method, thin-film transistor, and display device | |
| CN1892420A (en) | Mask for continuous lateral solidification technique and method for forming polysilicon layer using same | |
| US20220212291A1 (en) | Laser crystallization apparatus | |
| CN101221902A (en) | Mask applied to continuous lateral crystal growth technology and laser crystallization method | |
| US7394507B2 (en) | Display panels and fabrication methods thereof | |
| CN1536619A (en) | Method for manufacturing low-temperature polycrystalline silicon film | |
| CN1721962A (en) | Gray mask and manufacturing method thereof | |
| CN115995468A (en) | Crystallization method of amorphous silicon |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20070124 |
