CN1389346A - Antireflective optical multilayer film - Google Patents
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- CN1389346A CN1389346A CN01118612A CN01118612A CN1389346A CN 1389346 A CN1389346 A CN 1389346A CN 01118612 A CN01118612 A CN 01118612A CN 01118612 A CN01118612 A CN 01118612A CN 1389346 A CN1389346 A CN 1389346A
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- 230000003667 anti-reflective effect Effects 0.000 title description 9
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 8
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 229910010413 TiO 2 Inorganic materials 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
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Abstract
Description
本发明涉及一种用于塑料或是玻璃基板的光学多层薄膜，特别是涉及一种最外层为高折射率透明导电膜的高抗反射光学多层薄膜。The invention relates to an optical multilayer film used for plastic or glass substrates, in particular to a high anti-reflection optical multilayer film whose outermost layer is a high refractive index transparent conductive film.
美国专利US 4,921,790揭示一种多层抗反射膜，具有在CeO2及合成树脂之间有优异的附着力。此多层膜系统包含CeO2，Al2O3，ZrO2，SiO2，TiO2及Ta2O5。在此多层膜系统的所有薄膜皆为氧化物材料，且此多层膜系统具有3到5层薄膜。依据其所列举的一个实例，其多层膜系统具有5层结构，总厚度为3580埃。此薄膜系统的表面层为SiO2，在光学设计上是一种低折射率材料，其折射率在波长为550nm时为1.46。US Patent No. 4,921,790 discloses a multilayer anti-reflection film with excellent adhesion between CeO 2 and synthetic resin. The multilayer film system includes CeO 2 , Al 2 O 3 , ZrO 2 , SiO 2 , TiO 2 and Ta 2 O 5 . All the films in the multilayer film system are oxide materials, and the multilayer film system has 3 to 5 layers of films. According to an example cited by it, its multilayer film system has a 5-layer structure with a total thickness of 3580 angstroms. The surface layer of this thin film system is SiO 2 , which is a low refractive index material in optical design, and its refractive index is 1.46 at a wavelength of 550nm.
美国专利US 5,105,310揭示一种多层抗反射膜，可以藉由反应溅镀法而于连续式真空镀膜机械中生产。此多层膜系统包含TiO2，SiO2，ZnO，ZrO2及Ta2O5。在此多层膜系统的所有薄膜皆为氧化物材料，且此多层膜系统具有4到6层薄膜。依据其所列举的一个实例，其多层膜系统具有6层结构，总厚度为4700埃。此薄膜系统之表面层为SiO2，在光学设计上是一种低折射率材料，其折射率在波长为550nm时为1.46。US Patent No. 5,105,310 discloses a multilayer anti-reflection film, which can be produced in a continuous vacuum coating machine by reactive sputtering. The multilayer film system includes TiO 2 , SiO 2 , ZnO, ZrO 2 and Ta 2 O 5 . All the films in the multilayer film system are oxide materials, and the multilayer film system has 4 to 6 layers of films. According to an example cited by it, its multilayer film system has a 6-layer structure with a total thickness of 4700 angstroms. The surface layer of this thin film system is SiO 2 , which is a low refractive index material in terms of optical design, and its refractive index is 1.46 at a wavelength of 550nm.
美国专利US 5,091,244及US 5,407,733揭示一种新型的导电、光衰减及抗反射多层膜。其主要专利范围为提供一种导电、光衰减及抗反射光学多层膜材料与结构。其多层膜系统包含TiN，NbN，SnO2，SiO2，Al2O3，及Nb2O5。此多层膜系统的所有薄膜皆为氧化物或是氮化物材料，且此多层膜系统具有3到4层薄膜。依据其所列举的一个实例，其多层膜系统具有4层结构，总厚度为1610埃，且对于可见光之透光率低于50％。此薄膜系统之表面层为SiO2，在光学设计上是一种低折射率材料，其折射率在波长为550nm时为1.46。US Patents US 5,091,244 and US 5,407,733 disclose a new type of conductive, light-attenuating and anti-reflection multilayer film. Its main patent scope is to provide a conductive, light attenuating and anti-reflection optical multilayer film material and structure. Its multilayer film system includes TiN, NbN, SnO 2 , SiO 2 , Al 2 O 3 , and Nb 2 O 5 . All the films of the multilayer film system are oxide or nitride materials, and the multilayer film system has 3 to 4 layers of films. According to an example cited therein, its multilayer film system has a 4-layer structure with a total thickness of 1610 angstroms, and the transmittance for visible light is lower than 50%. The surface layer of this thin film system is SiO 2 , which is a low refractive index material in terms of optical design, and its refractive index is 1.46 at a wavelength of 550nm.
美国专利US 5,147,125揭示一种多层抗反射膜，具有氧化锌以提供波长小于380nm时的抗紫外线效果。此多层膜系统包含TiO2，SiO2，ZnO及MgF2。此多层膜系统的所有薄膜皆为氧化物或是氟化物材料，且此多层膜系统具有4到6层薄膜。依据其所列举的一个实例，其多层膜系统具有5层结构，总厚度为7350埃。此薄膜系统之表面层为MgF2，在光学设计上是一种低折射率材料，其折射率在波长为550nm时为1.38。US Patent No. 5,147,125 discloses a multilayer anti-reflection film with zinc oxide to provide anti-ultraviolet effect at wavelengths less than 380nm. This multilayer film system contains TiO 2 , SiO 2 , ZnO and MgF 2 . All the films of the multilayer film system are oxide or fluoride materials, and the multilayer film system has 4 to 6 layers of films. According to an example cited by it, its multilayer film system has a 5-layer structure with a total thickness of 7350 angstroms. The surface layer of this thin film system is MgF 2 , which is a low refractive index material in terms of optical design, and its refractive index is 1.38 at a wavelength of 550nm.
美国专利US 5,170,291揭示一种四层薄膜系统，具有光学作用且有高抗反射效果。此多层膜系统可以用热解法、电浆辅助化学蒸汽沉积法、溅镀方法或是化学沉积方法形成。此多层膜系统包含TiO2，SiO2，Al2O3，ZnS，MgO，及Bi2O3。依据其所列举的一个实例，其多层膜系统具有4层结构，总厚度为2480埃。此薄膜系统之表面层为SiO2，在光学设计上是一种低折射率材料，折射率在波长为550nm时为1.46。US Patent No. 5,170,291 discloses a four-layer film system with optical effects and high anti-reflection effect. The multilayer film system can be formed by pyrolysis, plasma-assisted chemical vapor deposition, sputtering or chemical deposition. The multilayer film system includes TiO 2 , SiO 2 , Al 2 O 3 , ZnS, MgO, and Bi 2 O 3 . According to an example cited by it, its multilayer film system has a 4-layer structure with a total thickness of 2480 angstroms. The surface layer of this thin film system is SiO 2 , which is a low refractive index material in terms of optical design, and the refractive index is 1.46 at a wavelength of 550nm.
美国专利US 5,216,542揭示一种五层薄膜系统，具有高抗反射效果。其包含一个厚度约为1nm，材料为Ni，Cr或是NiCr的附着层，另外四层材料可以包含SnO2，ZnO，Ta2O5，NiO，CrO2，TiO2，Sb2O3，In2O3，Al2O3，SiO2，TiN及ZrN。依据其所列举的一个实例，其薄膜系统具有5层结构，总厚度为2327埃，且对于可见光之透光率低于30％。此薄膜系统之表面层为SiO2，在光学设计上是一种低折射率材料，其折射率在波长为55Onm时为1.46。US Patent No. 5,216,542 discloses a five-layer film system with high anti-reflection effect. It contains an adhesion layer with a thickness of about 1nm and the material is Ni, Cr or NiCr. The other four layers of materials can include SnO 2 , ZnO, Ta 2 O 5 , NiO, CrO 2 , TiO 2 , Sb 2 O 3 , In 2 O 3 , Al 2 O 3 , SiO 2 , TiN and ZrN. According to an example cited by it, its thin film system has a 5-layer structure with a total thickness of 2327 angstroms, and the transmittance for visible light is lower than 30%. The surface layer of this thin film system is SiO 2 , which is a low refractive index material in terms of optical design, and its refractive index is 1.46 at a wavelength of 55Onm.
美国专利US 5,541,770揭示一种四或五层薄膜系统，为光衰减及抗反射多层膜，且有一层导电层。此薄膜系统包含一个吸光高折射率金属层，例如Cr，Mo及W，此吸光高折射率金属层作为此薄膜系统中的光学作用薄膜。此薄膜系统之另外三或四层为TiO2，ITO，Al2O3，SiO2及TiN。此多层膜系统的所有薄膜大多为氧化物或是氮化物材料。依据其所列举的一个实例，其薄膜系统具有5层结构，总厚度为1495埃，且对于可见光之透光率低于60％。此薄膜系统之表面层为SiO2，在光学设计上是一种低折射率材科，其折射率在波长为550nm时为1.46。US Patent No. 5,541,770 discloses a four- or five-layer film system, which is a multilayer film for light attenuation and antireflection, and has a conductive layer. The thin-film system includes a light-absorbing high-refractive-index metal layer, such as Cr, Mo and W, and the light-absorbing high-refractive-index metal layer serves as an optically active film in the thin-film system. The other three or four layers of this thin film system are TiO 2 , ITO, Al 2 O 3 , SiO 2 and TiN. All films of this multilayer film system are mostly oxide or nitride materials. According to an example cited by it, its thin film system has a 5-layer structure with a total thickness of 1495 angstroms, and the transmittance for visible light is lower than 60%. The surface layer of this thin film system is SiO 2 , which is a low refractive index material in terms of optical design, and its refractive index is 1.46 at a wavelength of 550nm.
美国专利US 5,362,552揭示一种六层薄膜系统，为一抗反射多层膜，且有三层金属氧化物导电层。此薄膜系统包含SiO2，ITO，Nb2O5及Ta2O5。在此薄膜系统中最多可以包含的金属氧化物光学厚度约为一个可见光波长。此六层结构之最厚的两个薄膜为854埃的SiO2及1975埃之ITO。此薄膜系统之表面层为SiO2，在光学设计上是一种低折射率材料，其折射率在波长为550nm时为1.46。US Patent No. 5,362,552 discloses a six-layer film system, which is an anti-reflection multilayer film and has three metal oxide conductive layers. This thin film system contains SiO 2 , ITO, Nb 2 O 5 and Ta 2 O 5 . The maximum optical thickness of metal oxides that can be included in this thin film system is about one wavelength of visible light. The two thickest films of the six-layer structure are SiO2 at 854 angstroms and ITO at 1975 angstroms. The surface layer of this thin film system is SiO 2 , which is a low refractive index material in terms of optical design, and its refractive index is 1.46 at a wavelength of 550nm.
美国专利US 5,579,162揭示一种四层抗反射多层膜，且用于如塑料之类的热敏性基板。此薄膜系统中的一层为DC反应溅镀金属氧化物层，此DC反应溅镀金属氧化物层可以快速沉积且不会带给基板过多热量。此四层结构的最厚的两个薄膜为940埃之SiO2及763埃之SnO2。此薄膜系统的表面层为SiO2，在光学设计上是一种低折射率材料，其折射率在波长为550nm时为1.46。US Patent No. 5,579,162 discloses a four-layer anti-reflection multilayer film for heat-sensitive substrates such as plastics. One layer of this thin film system is a DC reactive sputtered metal oxide layer, which can be deposited quickly without bringing excessive heat to the substrate. The two thickest films of this four-layer structure are 940 Angstroms of SiO 2 and 763 Angstroms of SnO 2 . The surface layer of this thin film system is SiO 2 , which is a low refractive index material in optical design, and its refractive index is 1.46 at a wavelength of 550nm.
美国专利US 5,728,456及US 5,783,049揭示一种改良方法以在塑料上沉积出抗反射多层膜。此多层簿膜系统使用滚动条式真空镀膜系统(Roller Coater)配合溅镀工艺。此薄膜系统包含ITO，SiO2及一簿润滑层，此薄润滑层为可溶性之氟化物。依据其所列举的一个实例，其薄膜系统具有6层结构，总厚度为2630埃。此薄膜系统的表面层为SiO2，在光学设计上是一种低折射率材料，其折射率在波长为550nm时为1.46。US Patents US 5,728,456 and US 5,783,049 disclose an improved method for depositing anti-reflective multilayer films on plastics. This multi-layer thin film system uses a roller coater vacuum coating system (Roller Coater) with a sputtering process. This thin film system consists of ITO, SiO 2 and a thin lubricating layer, which is a soluble fluoride. According to an example cited by it, its thin film system has a 6-layer structure with a total thickness of 2630 angstroms. The surface layer of this thin film system is SiO 2 , which is a low refractive index material in optical design, and its refractive index is 1.46 at a wavelength of 550nm.
在上述各已知专利之中，光学系统的表面薄膜为SiO2或是MgF2，在光学设计上是一种低折射率材料，其折射率在波长为550nm时为1.46或是1.38。In the above-mentioned known patents, the surface film of the optical system is SiO 2 or MgF 2 , which is a low refractive index material in optical design, and its refractive index is 1.46 or 1.38 at a wavelength of 550 nm.
传统的大量制造氧化物薄膜的过程具有高可靠性，且广泛用于半导体、光盘读取头、LCD、CRT、建材玻璃、触摸式面板、屏幕护目屏及玻璃镀膜，且己有数十年的历史。The traditional process of mass-producing oxide thin films has high reliability and is widely used in semiconductors, optical disc read heads, LCDs, CRTs, building glass, touch panels, screen eye protection screens and glass coatings, and has been used for decades History.
传统的抗反射光学多层膜的结构具有一通则。基本原则为此抗反射光学多层膜的表面层为具有低折射率的材料，例如表面薄膜为SiO2或是MgF2，且其折射率分别为1.46或是1.38。然而在把此抗反射光学多层膜应用于显示器工业，例如计算机荧光屏的护目屏、或是平面CRT的低反射玻璃时，由于传统的抗反射光学多层膜表面层为SiO2或是MgF2，因此在大量生产时会遇到障碍。The structure of traditional anti-reflection optical multilayer films has a general rule. The basic principle is that the surface layer of the anti-reflection optical multilayer film is made of a material with a low refractive index, for example, the surface film is SiO 2 or MgF 2 , and the refractive index is 1.46 or 1.38, respectively. However, when applying this antireflection optical multilayer film to the display industry, such as the eye protection screen of a computer fluorescent screen, or the low reflection glass of a flat CRT, because the surface layer of the traditional antireflection optical multilayer film is SiO 2 or MgF 2 , so there are obstacles in mass production.
在传统的抗反射光学多层膜的一般设计原理中，镀着在基板表面第一层的薄膜为具有高折射率的薄膜材料(下称H)，接下来的第二层是具有低折射率的薄膜材料(下称L)。因此，传统的抗反射光学多层膜的结构为HLHL或是HLHLHL。举一个较为简单的例子，如果高折射率的材料H为ITO、低折射率之材料L为SiO2，则此四层结构为玻璃/ITO/SiO2/ITO/SiO2。由于ITO具有导电性，因此，此多层系统的电阻系数可以低于1000Ω/□。在此导电层接地时，此导电层可以作为EMI屏蔽层或是静电排除层。然而传统的抗反射光学多层薄膜表面层为SiO2，且其厚度为1000埃。SiO2材料的特性为高密度、化学惰性及电绝缘性，因此，在将此抗反射光学多层薄膜用于显示器时，由于ITO层被SiO2层所包覆住，因此很难与ITO层导通形成接触电极。此抗反射光学多层薄膜需要使用超声波焊接工艺来破坏该SiO2层，使焊锡可以与ITO层有良好的电气接触。在平板CRT或其它显示器欲使用多层光学薄膜作为EMI屏蔽时经常遭遇这种困难，这就是大量应用此抗反射光学多层薄膜的障碍。In the general design principle of the traditional anti-reflection optical multilayer film, the first film coated on the surface of the substrate is a film material with a high refractive index (hereinafter referred to as H), and the next second layer is a film with a low refractive index. The thin film material (hereinafter referred to as L). Therefore, the structure of the traditional anti-reflection optical multilayer film is HLHL or HLHLHL. To give a relatively simple example, if the high refractive index material H is ITO, and the low refractive index material L is SiO 2 , then the four-layer structure is glass/ITO/SiO 2 /ITO/SiO 2 . Due to the conductivity of ITO, the resistivity of this multilayer system can be lower than 1000Ω/□. When the conductive layer is grounded, the conductive layer can serve as an EMI shielding layer or a static discharge layer. However, the surface layer of the traditional anti-reflection optical multilayer film is SiO 2 , and its thickness is 1000 angstroms. The characteristics of SiO 2 material are high density, chemical inertness and electrical insulation. Therefore, when using this anti-reflection optical multilayer film for display, because the ITO layer is covered by the SiO 2 layer, it is difficult to integrate with the ITO layer. conduction to form a contact electrode. This anti-reflective optical multilayer film needs to use ultrasonic welding process to destroy the SiO2 layer, so that the solder can have good electrical contact with the ITO layer. This difficulty is often encountered when flat-panel CRTs or other displays intend to use multilayer optical films as EMI shielding, which is an obstacle to the large-scale application of this anti-reflective optical multilayer film.
另一方面，该超声波焊接过程中的液体锡及超声波能量会造成焊锡的小亮点污染。而且此超声波焊接过程无法保证可以均匀地破坏SiO2层，使金属锡与ITO层形成均匀接触。On the other hand, the liquid tin and ultrasonic energy in the ultrasonic welding process will cause small bright spots of solder to be polluted. Moreover, this ultrasonic welding process cannot guarantee that the SiO2 layer can be destroyed uniformly, so that the metal tin and the ITO layer form a uniform contact.
上述缺点会降低传统的抗反射光学多层薄膜在显示器工业应用的成品率，因此，如果ITO层能作为抗反射光学多层膜的表面层，则可克服上述问题。然而这违反了一般HLHL的设计原则。The above shortcomings will reduce the yield of traditional antireflection optical multilayer films in the display industry. Therefore, if the ITO layer can be used as the surface layer of antireflection optical multilayer films, the above problems can be overcome. However this violates general HLHL design principles.
鉴于现有技术上述的缺点，本发明的目的在于提供一种在工业应用时可以简化接地工艺、并可以应用于玻璃或塑料基板的显示器或触摸屏幕的抗反射导电多层薄膜。In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide an anti-reflection conductive multilayer film that can simplify the grounding process in industrial applications and can be applied to displays or touch screens with glass or plastic substrates.
为实现上述目的，按照本发明的抗反射光学多层薄膜具有形成在基板上的五层结构，该五层结构包含由远离基板方向算起的第一层、第二层、第三层、第四层及第五层多层结构；第一层为具有高折射率的氧化物，其实体厚度为10-60nm；第二层为具有低折射率的氧化物，其实体厚度为10-70nm；第三层为具有高折射率的氧化物，其实体厚度为30-100nm；第四层为具有低折射率的氧化物，其实体厚度为10-70nm；第五层为具有高折射率的氧化物，其实体厚度为10-60nm。In order to achieve the above object, the antireflection optical multilayer film of the present invention has a five-layer structure formed on the substrate, and the five-layer structure includes the first layer, the second layer, the third layer, the Four-layer and fifth-layer multilayer structures; the first layer is an oxide with a high refractive index, and its physical thickness is 10-60nm; the second layer is an oxide with a low refractive index, and its physical thickness is 10-70nm; The third layer is an oxide with a high refractive index, and its physical thickness is 30-100nm; the fourth layer is an oxide with a low refractive index, and its physical thickness is 10-70nm; the fifth layer is an oxide with a high refractive index. Object, its solid thickness is 10-60nm.
按照本发明的抗反射光学多层薄膜的第一层，即表面层为透明导电氧化物层，此透明导电氧化物层最好为ITO层，其在可见光下略具吸收性，在波长550nm下，其折射率为1.9-2.1，且在此波长下其实体厚度为10nm-40nm。According to the first layer of the anti-reflection optical multilayer film of the present invention, i.e. the surface layer is a transparent conductive oxide layer, and this transparent conductive oxide layer is preferably an ITO layer, which is slightly absorptive under visible light. , its refractive index is 1.9-2.1, and its physical thickness is 10nm-40nm at this wavelength.
第二层为氧化物材料，最好为SiO2，其不吸收可见光，在波长550nm下，折射率为1.45-1.50，且在此波长下其实体厚度为30nm-50nm。The second layer is an oxide material, preferably SiO 2 , which does not absorb visible light, has a refractive index of 1.45-1.50 at a wavelength of 550nm, and has a physical thickness of 30nm-50nm at this wavelength.
第三层也为氧化物材料，最好为NbO，其不吸收可见光，在波长550nm下，折射率为2.0-2.3，且在此波长下其实体厚度为30nm-80nm。The third layer is also an oxide material, preferably NbO, which does not absorb visible light, has a refractive index of 2.0-2.3 at a wavelength of 550nm, and has a physical thickness of 30nm-80nm at this wavelength.
第四层为氧化物材料，最好为SiO2，其不吸收可见光，在波长550nm下，折射率为1.45-1.50，且在此波长下其实体厚度为20nm-30nm。The fourth layer is an oxide material, preferably SiO 2 , which does not absorb visible light, has a refractive index of 1.45-1.50 at a wavelength of 550nm, and has a physical thickness of 20nm-30nm at this wavelength.
第五层(最内层)也为氧化物材料，最好为NbO，其不吸收可见光，在波长550nm下，折射率为2.0-2.3，且在此波长下其实体厚度为10nm-30nm。The fifth layer (innermost layer) is also an oxide material, preferably NbO, which does not absorb visible light, has a refractive index of 2.0-2.3 at a wavelength of 550nm, and has a physical thickness of 10nm-30nm at this wavelength.
按照本发明的抗反射光学多层薄膜，其五层结构包含一个材料为ITO且厚度为25nm的第一层、一个材料为SiO2厚度为40nm的第二层、一个材料为NbO厚度为60nm的第三层、一个材料为SiO2厚度为26nm的第四层及一个材料为NbO厚度为18nm的第五层。According to the anti-reflection optical multilayer film of the present invention, its five-layer structure includes a material that is ITO and a first layer with a thickness of 25nm, a material that is SiO The second layer with a thickness of 40nm, and a material that is NbO with a thickness of 60nm The third layer, a fourth layer made of SiO 2 with a thickness of 26 nm, and a fifth layer made of NbO with a thickness of 18 nm.
依据本发明，ITO层可以使此抗反射光学多层薄膜的表面层电阻值低达100Ω/□-1000Ω/□。再者，此抗反射光学多层薄膜可以用于玻璃或是塑料基板，且波长范围为400-700nm。本发明可以提供一简易、可靠且符合经济效益的抗反射光学多层薄膜。此抗反射光学多层薄膜具有良好的表面导电性。尤其重要的是本发明可以使用连续式溅镀系统来淀积此多层光学簿膜，达到降低成本及大量生产的目的。According to the present invention, the ITO layer can make the surface layer resistance of the anti-reflection optical multilayer film as low as 100Ω/□-1000Ω/□. Furthermore, the anti-reflection optical multilayer film can be used for glass or plastic substrates, and the wavelength range is 400-700nm. The invention can provide a simple, reliable and economical anti-reflection optical multilayer film. The antireflection optical multilayer film has good surface conductivity. It is especially important that the present invention can use a continuous sputtering system to deposit the multi-layer optical film, so as to achieve the purpose of cost reduction and mass production.
另一方面，按照本发明的抗反射光学多层薄膜具有能屏蔽EMI的良好的导电性、可用作触摸式感测面板材料的高透明度、符合视觉效果的低反射率、抗刮伤特性及低成本。此抗反射光学多层薄膜可实现符合MIL-C-48497标准的抗刮伤特性。On the other hand, according to the anti-reflection optical multilayer film of the present invention, it has good electrical conductivity that can shield EMI, high transparency that can be used as a touch-sensitive panel material, low reflectivity that conforms to visual effects, anti-scratch properties and low cost. This antireflective optical multilayer film achieves scratch resistance properties in accordance with MIL-C-48497.
在本发明中，可以使用DC或是AC磁控管溅镀以由ITO靶来制作第一层膜，制作环境气氛为Ar气体及少量的O2，压力为2m乇。可以使用AC磁控管溅镀以由硅靶来制作第二及第四层的SiO2层，制作环境气氛为Ar与O2混合气体，压力为2m乇。可以使用DC或是AC磁控管溅镀以由Nb靶来制作第三及第五层的NbO层，制作环境气氛为Ar及O2混合气体，压力为2.5m乇。In the present invention, DC or AC magnetron sputtering can be used to produce the first layer of film from the ITO target, the production environment atmosphere is Ar gas and a small amount of O 2 , and the pressure is 2mTorr. AC magnetron sputtering can be used to make the second and fourth SiO 2 layers from the silicon target, and the production environment atmosphere is a mixed gas of Ar and O 2 , and the pressure is 2mTorr. DC or AC magnetron sputtering can be used to make the third and fifth NbO layers from the Nb target, and the production environment atmosphere is a mixed gas of Ar and O 2 , and the pressure is 2.5mTorr.
由于本发明在抗反射多层光学薄膜表面设置ITO导电层，因此已有技术中ITO导电层被SiO2层埋藏的问题可以得到解决。本发明提供一个五层系统的抗反射光学多层薄膜，表面层为ITO导电层，且折射率高达1.9-2.1。Since the present invention arranges the ITO conductive layer on the surface of the anti-reflection multilayer optical film, the problem that the ITO conductive layer is buried by the SiO2 layer in the prior art can be solved. The invention provides a five-layer system anti-reflection optical multilayer film, the surface layer is an ITO conductive layer, and the refractive index is as high as 1.9-2.1.
由于此抗反射光学涂布层的表面层为导电层，电极可以很容易地形成于此抗反射光学多层薄膜上，本发明尤其有利于触摸式传感器之应用。Since the surface layer of the anti-reflection optical coating layer is a conductive layer, electrodes can be easily formed on the anti-reflection optical multilayer film, and the invention is especially beneficial to the application of touch sensors.
在将抗反射光学多层薄膜应用于平面CRT或是屏幕滤光器时，已有的超声波接地方式会造成小亮点污染。按照本发明的具有透明导电表面层之抗反射多层薄膜可以解决此问题，使得ITO层不再有不均匀之电接点，使成品优良率增加。When anti-reflection optical multilayer films are applied to flat CRTs or screen filters, the existing ultrasonic grounding method will cause small bright spots to be polluted. The anti-reflection multilayer film with transparent conductive surface layer according to the present invention can solve this problem, so that the ITO layer no longer has uneven electrical contacts, and the yield of finished products is increased.
另一方面，本发明的抗反射光学多层薄膜系统可以用作触摸式传感器的基本多层薄膜。On the other hand, the antireflection optical multilayer film system of the present invention can be used as the basic multilayer film of a touch sensor.
因此，按照本发明的具有透明导电表面层的五层系统有简易及经济之效果，可以用作塑料或玻璃基板的抗反射光学多层薄膜。Thus, the five-layer system according to the invention with a transparent conductive surface layer has the effect of simplicity and economy and can be used as an antireflective optical multilayer film for plastic or glass substrates.
附图简要说明：Brief description of the drawings:
图1是按照本发明的优选实施例的抗反射光学多层薄膜的膜层结构图；Fig. 1 is the layer structure figure of the anti-reflection optical multilayer film according to the preferred embodiment of the present invention;
图2是按照本发明的抗反射光学多层薄膜的反射率的波长相应曲线。Fig. 2 is a wavelength-dependent graph of the reflectance of an antireflective optical multilayer film according to the present invention.
优选实例详细说明Detailed description of preferred examples
本发明提供一种以氧化物为主且具有五层结构的抗反射光学多层薄膜，此抗反射光学多层薄膜的多层结构由最外层开始编号。每一层的厚度可以用实体厚度或是光学厚度来表示，其中光学厚度是该层之厚度乘以该层之折射率，并且可以用波长来计算，在本发明中，波长设定为550nm。The invention provides an anti-reflection optical multilayer film mainly composed of oxide and having a five-layer structure. The multilayer structure of the anti-reflection optical multilayer film is numbered from the outermost layer. The thickness of each layer can be represented by physical thickness or optical thickness, wherein the optical thickness is the thickness of the layer multiplied by the refractive index of the layer, and can be calculated by the wavelength. In the present invention, the wavelength is set to 550nm.
如图1所示，本发明的抗反射光学多层薄膜的基板7可以为玻璃、塑料箔或其它透明材料，此基板7具有一个前表面6(沿箭头8指示的方向观察)。膜层5接触到基板7的前表面6，为本发明的抗反射光学多层薄膜的第五层5；沿着向观察者之方向接着为第四层4，此第四层4位于第五5之上；沿着向观察者之方向接着为第三层3，此第三层3位于第四层4之上；沿着向观察者之方向接着为第二层2，此第二层2位于第三层3之上；接着为第一层1。此五个膜层1，2，3，4，5构成本发明的抗反射光学多层薄膜之五层系统。As shown in Figure 1, the
第一层1即为最外层，为一个ITO层，厚度为25nm，折射率在波长为550nm时为1.9-2.1；第二层2为SiO2层，其厚度为40nm，折射率在波长为550nm时为1.46：第三层3为NbO层，其厚度为60nm，折射率在波长为550nm时为2.2；第四层4为SiO2层，其厚度为25nm，折射率在波长为550nm时为1.46；第五层5为NbO层，其厚度为18nm，折射率在波长为550nm时为2.2。The
图2是按照本发明的抗反射光学多层薄膜的反射率的波长相应曲线。系由玻璃之前表面量测，可见光波长由400nm至700nm。由曲线可以看出，此五层结构在核心波长(460nm至600nm)，反射系数低到0.3％。此结果和由传统HLHL制程所制造的多层系统类似。Fig. 2 is a wavelength-dependent graph of the reflectance of an antireflective optical multilayer film according to the present invention. It is measured from the front surface of the glass, and the wavelength of visible light is from 400nm to 700nm. It can be seen from the curve that the reflection coefficient of the five-layer structure is as low as 0.3% at the core wavelength (460nm to 600nm). This result is similar to multilayer systems fabricated by conventional HLHL processes.
表一是波长由400nm至700nm的详细反射系数。在本发明中，氧化层2，3，4，5系在AC溅镀方法并且使用一磁控管电极，制程环境气氛为Ar与O2混合气体。另一方面，对于第一层1的ITO而言，系用AC，DC或是DC脉波方式，且在含有Ar及少数O2反应混合气体之制程环境气氛中形成。对于膜层5，4，3，2，1靶材材料分别为Nb，Si，Nb，Si，ITO。靶材至基板的距离为15公分。且使用一加热器加热此溅镀系统，使基板温度保持在100-300℃。Table 1 shows the detailed reflection coefficients for wavelengths from 400nm to 700nm. In the present invention, the oxide layers 2, 3, 4, 5 are formed by AC sputtering method and a magnetron electrode is used, and the process ambient atmosphere is a mixed gas of Ar and O2 . On the other hand, for the ITO of the
表一
综上所述，按照本发明的抗反射光学多层簿膜具有良好之导电性以屏蔽EMI、高透明度以提供触摸式感测面板之材料、低反射率以符合视觉效果、抗刮伤特性及低成本。In summary, the anti-reflection optical multilayer film according to the present invention has good conductivity to shield EMI, high transparency to provide materials for touch-sensitive panels, low reflectivity to meet visual effects, anti-scratch properties and low cost.
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