EP0438444A4 - Aluminum alloy semiconductor packages - Google Patents

Aluminum alloy semiconductor packages

Info

Publication number
EP0438444A4
EP0438444A4 EP19890911147 EP89911147A EP0438444A4 EP 0438444 A4 EP0438444 A4 EP 0438444A4 EP 19890911147 EP19890911147 EP 19890911147 EP 89911147 A EP89911147 A EP 89911147A EP 0438444 A4 EP0438444 A4 EP 0438444A4
Authority
EP
European Patent Office
Prior art keywords
component
package
cover
base
window frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP19890911147
Other languages
French (fr)
Other versions
EP0438444A1 (en
EP0438444B1 (en
Inventor
Deepak Mahulikar
James M. Popplewell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olin Corp
Original Assignee
Olin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olin Corp filed Critical Olin Corp
Priority to EP95117178A priority Critical patent/EP0700083B1/en
Publication of EP0438444A1 publication Critical patent/EP0438444A1/en
Publication of EP0438444A4 publication Critical patent/EP0438444A4/en
Application granted granted Critical
Publication of EP0438444B1 publication Critical patent/EP0438444B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142—Metallic substrates having insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/15165—Monolayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49121—Beam lead frame or beam lead device

Definitions

  • This invention relates to semiconductor packages in general and, more particularly, to light weight non-hermetic packages having improved corrosion resistance.
  • the packages may be broadly categorized as either hermetic or non-hermetic.
  • Hermetic packages are generally formed from 5 ceramic or metal components and are usually glass sealed.
  • An example of a hermetic package is the CERDIP, ceramic dual-in-line package.
  • Non-hermetic packages are generally formed from ceramic, metal or plastic components and 0 are usually epoxy sealed. Non-hermetic packages are also formed by molding a plastic body about the electronic device.
  • Metal non-hermetic packages comprise metal base and cover components with or without a 5 window frame.
  • a leadframe is disposed either between the base component and the cover component or between the base component and the window frame.
  • the package components are bonded together with a polymer adhesive such as epoxy.
  • 3C Epoxy sealed non-hermetic packages are disclosed in U.S. Patent No. 4,105,861 issued to Hascoe and U.S. Patent No. 4,594,770 issued to Butt. Copper or a copper alloy is preferred in U.S. Patent No. 4,594,770 due to the high 35 thermal conductivity of the metal. It is desirable to maximize the strength of the epoxy to metal bond.
  • One method of improving the adhesive to metal bond is to coat the metal components with a second material which forms a stronger bond to the metal substrate.
  • the second material may be deposited by cladding, plating, sputtering, vapor deposition or any other technique known in the art.
  • the bond may be further strengthened by a post deposition treatment such as oxidation or passivation.
  • Coating of a copper based leadframe to improve resin adhesion is disclosed in U.S. Patent No. 4,707,724 issued to Suzuki et al.
  • a molded plastic package has insufficient thermal conductivity for high power circuits which generate a large quantity of heat during operation. Copper base and cover components may add too much weight for applications such as aerospace.
  • An aluminum based metal package would have a significant advantage over copper based metal packages.
  • the weight of the assembled package is up to about 60% less than that of the comparable copper package. Weight is important in aerospace, military and outer space applications where a large number of electronic devices are utilized and a significant weight penalty exists.
  • the assembled packages fail a salt spray corrosion test specified in Military-Standard-883.
  • the salt corrosion test comprises an aqueous solution containing 3% by weight sodium chloride. The solution is held at 35 ⁇ C and the packages are immersed for 24 hours. Upon removal, the packages made from an aluminum based alloy exhibit numerous small corrosion pits.
  • a package made using copper alloy 197 having a nominal composition of 0.5% Fe, 0.035% Mg, 0.18% P and the balance copper exhibits no corrosion pitting after the same 24 hour salt corrosion test.
  • aluminum or aluminum based alloy package components weigh up to about 60% less than comparable copper or copper alloy components. It is an advantage of the invention that the aluminum or aluminum based alloy components are less costly than comparable copper or copper alloy based components.
  • the electronic device may be electrically isolated from the package components while high thermal conductivity is maintained.
  • the package comprises aluminum or aluminum alloy base and cover components.
  • a 5 leadframe is disposed between the base and cover components and adapted to be bonded to both.
  • An anodization layer covers at least that portion of the base and cover components exposed to the atmosphere.
  • the package may be resin sealed. 10
  • An improved seal is obtained by anodizing the seal areas of the base and cover components.
  • a light weight non-hermetic package comprising aluminum or aluminum based alloy components is claimed. Improved corrosion 15 resistance is obtained by an anodization surface applied to at least a portion of the surfaces of the package components.
  • An anodized aluminum surface differs compositionally from a refractory aluminum oxide surface.
  • the refractory oxide is anhydrous, or
  • the anodized surface comprises hydrated aluminum oxide.
  • the water concentration varies from a trace up to about equal molar concentration with the aluminum oxide (Al 2 ⁇ 3 , H 2 0).
  • the anodization is deposited by an electrochemical process rather than high temperature oxidation as usually used to form refractory oxide layers.
  • anodization is a chemical conversion process
  • ⁇ chemical conversion process forms a surface coating consisting of a compound of the base metal.
  • FIG. 1 illustrates an electronic package manufactured according to the invention.
  • FIG. 2 illustrates a window frame type electronic package manufactured according to the invention.
  • FIG. 1 illustrates an electronic package 10 adapted to house an electronic device 12.
  • the electronic device 12 is typically an integrated circuit such as a silicon based semiconductor device.
  • the package 10 is comprised of a base component 14 and a cover component 16.
  • a depression 18 is optionally formed in the base component 14.
  • a second depression 20 is optionally formed in the cover component 16.
  • These depressions serve to form a cavity 22 to encase the electronic device 12.
  • the depressions are usually formed by milling or chemical etching. Alternatively, a metal deformation process may be used to form the cavities.
  • the base component 14 and the cover component 16 are preferably manufactured from aluminum or an aluminum alloy.
  • Aluminum alloys designated by the ASM (American Society for Metals) as 3xxx series are preferred. These alloys contain up to about 1.5% by weight manganese along with other alloying elements. The alloys have good thermal conductivity and about 20% higher strength than the alloys designated as the lxxx series (greater than 99.00% aluminum).
  • a most preferred aluminum alloy is aluminum alloy 3003 having a nominal composition of about 0.12% by weight copper, about 1.2% by weight manganese and the balance aluminum.
  • a leadframe 24 is disposed between the base component 14 and the cover component 16.
  • the leadframe 24 comprises inner lead ends 26 and outer lead ends 28.
  • Inner lead ends 26 are adapted for electrical interconnection to the electronic device 12 as by wire bonds 30.
  • the outer lead ends 28 are adapted for connection to an external device such as a printed circuit board.
  • the electronic device 12 is bonded to the base component 14 by a die attach 31.
  • the die attach 31 may be electrically conductive or electrically insulating dependent upon the needs of the electronic device 12.
  • As the coefficient of thermal expansion of the aluminum or aluminum alloy base component 14 is _7 from about 230 x 10 /°C to about 274 x
  • a compliant die attach system will absorb the stresses created by the coefficient of thermal expansion mismatch generated during die attach, package sealing and device operation.
  • Silver filled polyimide die attach systems are particularly well suited for the package as are die attach systems incorporating a relatively low coefficient of thermal expansion buffer.
  • the bonding layers may be any adhesive known in the art and are commonly a polymer adhesive or a sealing glass.
  • the adhesive layers 32 may be comprised of any suitable thermosetting or thermoplastic resin.
  • a resin adhesive such as an epoxy, for example, Ablestik 550K manufactured by Ablestik Laboratories of Gardena, California is one exemplary bonding material. This sealant is bonded at a temperature in the range of from about 145"C to about 155'C. Bonding times range from about 1 hour to about 2 hours.
  • an anodization layer 34 on at least a portion of the base 14 and cover 16 components yields superior results.
  • a thin anodization layer defined as having a thickness of less than about 2.5 microns (100 microinches) and a thick anodization layer produce aluminum base electronic packages which exhibited no corrosion when subjected to the 24 hour salt corrosion test.
  • the preferred thickness of the anodization layer is from about 0.25 microns (10 icroinches) to about 50 microns (2000 micro- inches) .
  • the most preferred thickness is in the range of from about 1.25 microns (50 microinches) to about 5 microns (200 microinches).
  • the anodization layer may be applied by any technique known in the art. For example, an aqueous solution containing about 20 volume percent sulfuric acid at a temperature of about 20 ⁇ C deposits a satisfactory anodized layer on the surface of an anodically charged aluminum or aluminum alloy substrate.
  • the anodization layer is applied either before or after the formation of depressions 18, 20 in the base 14 and cover 16 components.
  • the surface 36 of the depression may either be anodized or bare metal.
  • a sealing process is preferably used to reduce porosity.
  • a typical anodization sealing process is water or steam sealing. The process entails exposing the anodized surface to pressurized steam for from about 30 minutes to about 60 minutes. The anodized surface hydrates to form crystalline boehmite (AI2O 3 ⁇ 2O). The conversion to boehmite results in a volume increase effectively closing any pores in the anodized surface.
  • Other satisfactory sealing solutions include nickel acetate, ferric oxalate, dichromates and molybdates.
  • a slight thermal conductivity advantage is achieved with bare metal, without an anodization layer.
  • the bare metal is electrically conductive.
  • a conductive substrate is not desirable. These devices are preferable electrically isolated from the package and the use of a thermally and electrically conductive die attach such as silver filled epoxy on bare metal results in shorting.
  • the present invention overcomes this problem by disposing a dielectric layer of anodization between the conductive die attach and the base metal electrically isolating the device from the package.
  • the thermal conductivity of aluminum alloy 3003 is only about 50% that of copper alloy 197, the ⁇ JC values are about equal and the ⁇ j ⁇ value only in the range of about from 10% to about 15% higher. It is believed the reason for this is that the largest contributor to ⁇ J Q and ⁇ j ⁇ values is the die attach material. The thermal resistance of the aluminum substrates is a minor contributor to the ⁇ values.
  • thermal performance is typically recorded as ⁇ J Q and ⁇ jA .
  • ⁇ JC is a measure of the temperature difference between the junction and the case. The junction temperature is measured at the die attach 31 and the case temperature is measured at a point along the package base 14.
  • ⁇ JA is a measure of the temperature difference between the junction and the ambient environment. Table 1 gives measured values for a 48 pin dual in line epoxy sealed package having either copper alloy 197 or aluminum alloy 3003 componenets.
  • Copper has a density about three times that of aluminum.
  • the invention is not limited to dual in line packages. QUAD packages having lead ends
  • 15 approaching the electronic device from all four sides of the device periphery may also be assembled using aluminum based components having anodized surfaces.
  • a window frame package 50 is similar to the above described package with the exception that a window frame 52 is disposed between the leadframe 24 and the cover component 16* .
  • a window frame package is desirable in the
  • the window frame 52 is comprised of any somewhat rigid material which is bondable to sealant 32.
  • the window frame preferably has a coefficient of thermal expansion close to that of the cover component 16- or the leadframe 24.
  • window frame materials are copper, aluminum and the alloys of the metals. To minimize package weight, aluminum or aluminum alloys are most preferred. For improved strength, manganese containing aluminum alloys such as aluminum alloy 3003 are preferred.
  • a leadframe 24 is disposed between the window frame 52 and a base component 14.
  • an anodization layer 34 is applied to the base component 14 and the window frame component 52.
  • the leadframe 24 is bonded to a first side of the window frame 52 and to the base component 14 with a suitable bonding agent 32 such as a glass or a polymer adhesive.
  • the electronic device 12 is bonded as by a die attach 31 and electrically connected to the inner leads 26 of the leadframe 24 by wire bonds 30.
  • a cover component 16 is then bonded to the second side of the window frame 52 with a sealant 56 to encase the electronic device 12.
  • the sealant 56 is selected to be any material known in the art which will bond to the window frame 52 and the cover component 16 at a relatively low temperature.
  • the desired bonding temperature is low enough so as not to degrade the sealant 32 or the electronic device 12.
  • the sealant preferably bonds at a temperature of less than about 150 ⁇ C.
  • the sealant may be any compatible thermosetting or thermoplastic adhesive.
  • a preferred sealant is the epoxy Ablestik 550.
  • the cover component 16 It is preferable to coat the cover component 16 with an anodization layer 34 for improved corrosion resistance.
  • the anodization layer may be applied over all or a portion of the base component 14, the cover component 16 and the window frame 52. It may not be desirable or necessary to entirely coat every surface of the base and cover component.
  • the region of the surfaces coated varies. At a minimum, all surfaces exposed to the atmosphere should be coated to prevent corrosion.
  • the seal areas, those surfaces in contact with the sealants 32 and 54 may be coated for improved bond strength. The remaining surface areas are optionally coated dependent upon desired electrical, thermal and moisture getting properties.
  • Interior surfaces 36 and 54 may preferably not be anodized. Better thermal conductivity is achieved by bonding the electronic device 12 directly to the aluminum or aluminum alloy surface 36. If the surface to be bonded 36 is not anodized, the electronic device may be electrically connected to the base component as for grounding. If the surface 36 is anodized, the electronic device may be electrically isolated from the package.
  • a moisture trapping surface such as a getter alloy may be formed on the interior surface 54 of the cover component to trap residual moisture and sealing reaction by-products.
  • Surfaces free of anodization may be prepared by a variety of methods.
  • the portion of the surface desired to be anodization free may be coated with a chemical resist or a plater's tape prior to immersion in the anodizing solution.
  • the entire surface may be anodized and the desired region made anode free by a mechanical operation. For example, a milling step is useful to form the base depression 18.
  • a roughened anodization layer may be formed.
  • a rougher surface finish increases mechanical locking of the bonding component, particularly a polymer sealant, and improves the bond strength. It is apparent the invention provides an electronic package having improved characteristics.
  • the package is more light weight than copper based packages and has better thermal conductivity than plastic based packages.
  • Anodizing at least a portion of the aluminum surfaces provides for increased resistance to corrosion and further increases bond strength. 0
  • a pressure pot test was used to evaluate the strength of the adhesive bond to anodized aluminum alloy based packages. The packages were epoxy sealed and then subjected to 100% relative humidity at 121°C and 984 gm/cm (14 5 psi). Leak testing revealed no adhesive failures after 200 hours.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Casings For Electric Apparatus (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

The present invention relates to a package (10) adapted to house an electronic device (12), such as a semiconductor integrated circuit. The package (10) components are comprised of aluminum or an aluminum based alloy. At least a portion of the surfaces of the package components are anodized to enhance corrosion resistance and increase bond strength. The aluminum based packages are characterized by lighter weight than copper based packages and better thermal conductivity than plastic based packages.

Description

ALUMINUM ALLOY SEMICONDUCTOR PACKAGES
This invention relates to semiconductor packages in general and, more particularly, to light weight non-hermetic packages having improved corrosion resistance.
In the electronics industry, the rapid development and extensive use of integrated circuits, such as silicon based semiconductor C devices have resulted in a proliferation of package designs to house electronic devices. The packages may be broadly categorized as either hermetic or non-hermetic.
Hermetic packages are generally formed from 5 ceramic or metal components and are usually glass sealed. An example of a hermetic package is the CERDIP, ceramic dual-in-line package.
Non-hermetic packages are generally formed from ceramic, metal or plastic components and 0 are usually epoxy sealed. Non-hermetic packages are also formed by molding a plastic body about the electronic device.
Metal non-hermetic packages comprise metal base and cover components with or without a 5 window frame. A leadframe is disposed either between the base component and the cover component or between the base component and the window frame. The package components are bonded together with a polymer adhesive such as epoxy. 3C Epoxy sealed non-hermetic packages are disclosed in U.S. Patent No. 4,105,861 issued to Hascoe and U.S. Patent No. 4,594,770 issued to Butt. Copper or a copper alloy is preferred in U.S. Patent No. 4,594,770 due to the high 35 thermal conductivity of the metal. It is desirable to maximize the strength of the epoxy to metal bond. One method of improving the adhesive to metal bond is to coat the metal components with a second material which forms a stronger bond to the metal substrate. The second material may be deposited by cladding, plating, sputtering, vapor deposition or any other technique known in the art. The bond may be further strengthened by a post deposition treatment such as oxidation or passivation. Coating of a copper based leadframe to improve resin adhesion is disclosed in U.S. Patent No. 4,707,724 issued to Suzuki et al. A molded plastic package has insufficient thermal conductivity for high power circuits which generate a large quantity of heat during operation. Copper base and cover components may add too much weight for applications such as aerospace.
An aluminum based metal package would have a significant advantage over copper based metal packages. The weight of the assembled package is up to about 60% less than that of the comparable copper package. Weight is important in aerospace, military and outer space applications where a large number of electronic devices are utilized and a significant weight penalty exists. Until now, aluminum and aluminum alloys have not been satisfactory for electronic packages due to the tendency of the metal to corrode. The assembled packages fail a salt spray corrosion test specified in Military-Standard-883. The salt corrosion test comprises an aqueous solution containing 3% by weight sodium chloride. The solution is held at 35βC and the packages are immersed for 24 hours. Upon removal, the packages made from an aluminum based alloy exhibit numerous small corrosion pits. By comparison, a package made using copper alloy 197 having a nominal composition of 0.5% Fe, 0.035% Mg, 0.18% P and the balance copper exhibits no corrosion pitting after the same 24 hour salt corrosion test.
It is an object of the present invention to manufacture an electronic package from aluminum or aluminum based alloy components. It is an advantage of the present invention that the aluminum or aluminum based alloy components have improved corrosion resistance. It is a feature of the invention that the improved corrosion resistance is imparted by anodizing at least a portion of the aluminum or aluminum based alloy components prior to bonding.
It is an advantage of the invention that aluminum or aluminum based alloy package components weigh up to about 60% less than comparable copper or copper alloy components. It is an advantage of the invention that the aluminum or aluminum based alloy components are less costly than comparable copper or copper alloy based components.
It is an advantage of the invention that the electronic device may be electrically isolated from the package components while high thermal conductivity is maintained. c In accordance with the invention, the foregoing objects, features and advantages are obtained by a package to encase an electronic device. The package comprises aluminum or aluminum alloy base and cover components. A 5 leadframe is disposed between the base and cover components and adapted to be bonded to both. An anodization layer covers at least that portion of the base and cover components exposed to the atmosphere. The package may be resin sealed. 10 An improved seal is obtained by anodizing the seal areas of the base and cover components.
Accordingly, a light weight non-hermetic package comprising aluminum or aluminum based alloy components is claimed. Improved corrosion 15 resistance is obtained by an anodization surface applied to at least a portion of the surfaces of the package components.
It is known to form a refractory oxide such as aluminum oxide on the sealing surface of the 2o alloy to enhance bonding. For example, U.S. Patent No. 4,542,259 issued to Butt discloses forming a refractory aluminum oxide coating on copper alloy CDA 63800 to enhance glass sealability. Copper alloy 63800 is a copper
25 based alloy containing from about 2% to about 12% aluminum.
An anodized aluminum surface differs compositionally from a refractory aluminum oxide surface. The refractory oxide is anhydrous, or
30 water free. The anodized surface comprises hydrated aluminum oxide. The water concentration varies from a trace up to about equal molar concentration with the aluminum oxide (Al2θ3,H20). The anodization is deposited by an electrochemical process rather than high temperature oxidation as usually used to form refractory oxide layers.
Unlike chemical deposition techniques such as plating, sputtering or vapor deposition, anodization is a chemical conversion process, ϋ chemical conversion process forms a surface coating consisting of a compound of the base metal.
A better understanding of the essential features of the invention will be obtained from the following specification and accompanying drawings.
FIG. 1 illustrates an electronic package manufactured according to the invention.
FIG. 2 illustrates a window frame type electronic package manufactured according to the invention.
FIG. 1 illustrates an electronic package 10 adapted to house an electronic device 12. The electronic device 12 is typically an integrated circuit such as a silicon based semiconductor device. The package 10 is comprised of a base component 14 and a cover component 16. A depression 18 is optionally formed in the base component 14. A second depression 20 is optionally formed in the cover component 16. These depressions serve to form a cavity 22 to encase the electronic device 12. The depressions are usually formed by milling or chemical etching. Alternatively, a metal deformation process may be used to form the cavities.
The base component 14 and the cover component 16 are preferably manufactured from aluminum or an aluminum alloy. Aluminum alloys designated by the ASM (American Society for Metals) as 3xxx series are preferred. These alloys contain up to about 1.5% by weight manganese along with other alloying elements. The alloys have good thermal conductivity and about 20% higher strength than the alloys designated as the lxxx series (greater than 99.00% aluminum). A most preferred aluminum alloy is aluminum alloy 3003 having a nominal composition of about 0.12% by weight copper, about 1.2% by weight manganese and the balance aluminum.
A leadframe 24 is disposed between the base component 14 and the cover component 16. The leadframe 24 comprises inner lead ends 26 and outer lead ends 28. Inner lead ends 26 are adapted for electrical interconnection to the electronic device 12 as by wire bonds 30. The outer lead ends 28 are adapted for connection to an external device such as a printed circuit board.
The electronic device 12 is bonded to the base component 14 by a die attach 31. The die attach 31 may be electrically conductive or electrically insulating dependent upon the needs of the electronic device 12. As the coefficient of thermal expansion of the aluminum or aluminum alloy base component 14 is _7 from about 230 x 10 /°C to about 274 x
_7 10 /°C and the coefficient of thermal expansion of the electronic device is about
_7 49 x 10 /°C, it is preferred to use a compliant die attach system. A compliant die ' c attach system will absorb the stresses created by the coefficient of thermal expansion mismatch generated during die attach, package sealing and device operation. Silver filled polyimide die attach systems are particularly well suited for the package as are die attach systems incorporating a relatively low coefficient of thermal expansion buffer.
Sealing the leadframe 24 to the base component 14 and the cover component 16 are bonding layers 32. The bonding layers may be any adhesive known in the art and are commonly a polymer adhesive or a sealing glass.
While the invention is applicable to both glass sealed and polymer sealed packages, it is more particularly drawn to polymer sealed packages and will be described in that context. The adhesive layers 32 may be comprised of any suitable thermosetting or thermoplastic resin. A resin adhesive such as an epoxy, for example, Ablestik 550K manufactured by Ablestik Laboratories of Gardena, California is one exemplary bonding material. This sealant is bonded at a temperature in the range of from about 145"C to about 155'C. Bonding times range from about 1 hour to about 2 hours.
It has been discovered that an anodization layer 34 on at least a portion of the base 14 and cover 16 components yields superior results. Both a thin anodization layer, defined as having a thickness of less than about 2.5 microns (100 microinches) and a thick anodization layer produce aluminum base electronic packages which exhibited no corrosion when subjected to the 24 hour salt corrosion test. The preferred thickness of the anodization layer is from about 0.25 microns (10 icroinches) to about 50 microns (2000 micro- inches) . The most preferred thickness is in the range of from about 1.25 microns (50 microinches) to about 5 microns (200 microinches).
The anodization layer may be applied by any technique known in the art. For example, an aqueous solution containing about 20 volume percent sulfuric acid at a temperature of about 20βC deposits a satisfactory anodized layer on the surface of an anodically charged aluminum or aluminum alloy substrate. The anodization layer is applied either before or after the formation of depressions 18, 20 in the base 14 and cover 16 components. The surface 36 of the depression may either be anodized or bare metal.
A sealing process is preferably used to reduce porosity. A typical anodization sealing process is water or steam sealing. The process entails exposing the anodized surface to pressurized steam for from about 30 minutes to about 60 minutes. The anodized surface hydrates to form crystalline boehmite (AI2O3Η2O). The conversion to boehmite results in a volume increase effectively closing any pores in the anodized surface. Other satisfactory sealing solutions include nickel acetate, ferric oxalate, dichromates and molybdates.
A slight thermal conductivity advantage is achieved with bare metal, without an anodization layer. The bare metal is electrically conductive. For certain electronic applications, such as housing a bipolar device, a conductive substrate is not desirable. These devices are preferable electrically isolated from the package and the use of a thermally and electrically conductive die attach such as silver filled epoxy on bare metal results in shorting. The present invention overcomes this problem by disposing a dielectric layer of anodization between the conductive die attach and the base metal electrically isolating the device from the package.
Even though the thermal conductivity of aluminum alloy 3003 is only about 50% that of copper alloy 197, the ΘJC values are about equal and the θj^ value only in the range of about from 10% to about 15% higher. It is believed the reason for this is that the largest contributor to ΘJQ and θj^ values is the die attach material. The thermal resistance of the aluminum substrates is a minor contributor to the θ values.
As discussed hereinabove, an advantage of metal packages over ceramic or plastic packages is thermal performance. Thermal performance is typically recorded as ΘJQ and θjA. ΘJC is a measure of the temperature difference between the junction and the case. The junction temperature is measured at the die attach 31 and the case temperature is measured at a point along the package base 14. similarly, ΘJA is a measure of the temperature difference between the junction and the ambient environment. Table 1 gives measured values for a 48 pin dual in line epoxy sealed package having either copper alloy 197 or aluminum alloy 3003 componenets.
TAB 1
ΘJA still forced air " C/W air ' C/W
18.5 - 22 5 - 6 17 - 19 8
Copper has a density about three times that of aluminum. A package weighing about 60% less
10 than a conventional copper metal package may be obtained with only a minimal loss in thermal performance in accordance with this invention.
The invention is not limited to dual in line packages. QUAD packages having lead ends
15 approaching the electronic device from all four sides of the device periphery may also be assembled using aluminum based components having anodized surfaces.
Window frame packages as shown in FIG. 2
20 are also made according to the invention. A window frame package 50 is similar to the above described package with the exception that a window frame 52 is disposed between the leadframe 24 and the cover component 16* . A window frame package is desirable in the
25 situation where the electronic device 12 is to be die attached and wire bonded at a different time than the package is assembled as where a vendor manufacturers the package for shipment to a device maker.
30
The window frame 52 is comprised of any somewhat rigid material which is bondable to sealant 32. The window frame preferably has a coefficient of thermal expansion close to that of the cover component 16- or the leadframe 24.
35 Preferred window frame materials are copper, aluminum and the alloys of the metals. To minimize package weight, aluminum or aluminum alloys are most preferred. For improved strength, manganese containing aluminum alloys such as aluminum alloy 3003 are preferred.
In the window frame package, a leadframe 24 is disposed between the window frame 52 and a base component 14. For improved corrosion resistance, an anodization layer 34 is applied to the base component 14 and the window frame component 52. The leadframe 24 is bonded to a first side of the window frame 52 and to the base component 14 with a suitable bonding agent 32 such as a glass or a polymer adhesive.
Subsequent to bonding the leadframe 24, the electronic device 12 is bonded as by a die attach 31 and electrically connected to the inner leads 26 of the leadframe 24 by wire bonds 30. A cover component 16 is then bonded to the second side of the window frame 52 with a sealant 56 to encase the electronic device 12.
The sealant 56 is selected to be any material known in the art which will bond to the window frame 52 and the cover component 16 at a relatively low temperature. The desired bonding temperature is low enough so as not to degrade the sealant 32 or the electronic device 12. The sealant preferably bonds at a temperature of less than about 150βC. The sealant may be any compatible thermosetting or thermoplastic adhesive. A preferred sealant is the epoxy Ablestik 550.
It is preferable to coat the cover component 16 with an anodization layer 34 for improved corrosion resistance. The anodization layer may be applied over all or a portion of the base component 14, the cover component 16 and the window frame 52. It may not be desirable or necessary to entirely coat every surface of the base and cover component.
The region of the surfaces coated varies. At a minimum, all surfaces exposed to the atmosphere should be coated to prevent corrosion. The seal areas, those surfaces in contact with the sealants 32 and 54 may be coated for improved bond strength. The remaining surface areas are optionally coated dependent upon desired electrical, thermal and moisture getting properties.
Interior surfaces 36 and 54 may preferably not be anodized. Better thermal conductivity is achieved by bonding the electronic device 12 directly to the aluminum or aluminum alloy surface 36. If the surface to be bonded 36 is not anodized, the electronic device may be electrically connected to the base component as for grounding. If the surface 36 is anodized, the electronic device may be electrically isolated from the package.
A moisture trapping surface, such as a getter alloy may be formed on the interior surface 54 of the cover component to trap residual moisture and sealing reaction by-products.
Surfaces free of anodization may be prepared by a variety of methods. The portion of the surface desired to be anodization free may be coated with a chemical resist or a plater's tape prior to immersion in the anodizing solution. The entire surface may be anodized and the desired region made anode free by a mechanical operation. For example, a milling step is useful to form the base depression 18.
By varying the anodization parameters, a roughened anodization layer may be formed. A rougher surface finish increases mechanical locking of the bonding component, particularly a polymer sealant, and improves the bond strength. It is apparent the invention provides an electronic package having improved characteristics. The package is more light weight than copper based packages and has better thermal conductivity than plastic based packages. Anodizing at least a portion of the aluminum surfaces provides for increased resistance to corrosion and further increases bond strength. 0 A pressure pot test was used to evaluate the strength of the adhesive bond to anodized aluminum alloy based packages. The packages were epoxy sealed and then subjected to 100% relative humidity at 121°C and 984 gm/cm (14 5 psi). Leak testing revealed no adhesive failures after 200 hours.
By adjusting the chemical composition and operating parameters of the anodization and sealing solutions, different color surfaces may 0 be obtained. This is beneficial in consumer electronic applications where a black or gold finish is often desirable.
It is apparent that there has been provided in accordance with this invention a number of
-**--*; embodiments which are especially suited for electronic packages comprised of aluminum or aluminum alloy components which have improved resistance to corrosion. While the invention has been described in connection with the embodiments thereof, it is evident that many alternatives, modifications and variations will be apparent to those skilled in the art in light of the foregoing description. Accordingly, it is intended to embrace all such alternatives,
10 modifications and variations as fall within the spirit and broad scope of the appended claims.
15
20
25
30

Claims

IN THE CLAIMS
1. A package 10 for encasing an electronic device 12, characterized by: an aluminum or aluminum alloy base component 14; an aluminum or aluminum alloy cover component 16; said base component 14 and said cover component 16 defining a cavity 22; a leadframe 24 disposed between and adapted to be bonded to said base component 14 and to said cover component 16; and an anodization layer 34 covering at least that portion of said base 14 and cover 16 components exposed to the atmosphere.
2. The package 10 of claim 1 characterized in that the thickness of the anodization layer 34 is in the range of from about 0.25 microns (10 microinches) to about 50 microns (1000 microinches) .
3. The package 10 of claim 2 characterized in that the thickness of the anodization layer 34 is in the range of from about 1.25 microns (50 microinches) to about 5 microns (200 microinches).
4. The package 10 of claim 2 characterized in that the seal area of said base 14 and cover 16 components is covered by an anodization layer 34. 5. The package 10 of claim 4 characterized in that said leadframe 24 is bondable to said base component 14 and to said cover component 16 by a sealing glass 32 or a polymer adhesive 32.
6. The package 10 of claim 5 characterized in that the surface of the anodization layer 34 has been roughened to improve bond strength.
7. The package 10 of claim 6 characterized in that said leadframe 34 is bondable to said base component 14 and to said cover component 16 by a resin adhesive 32.
8. The package 10 of claim 2 characterized in that substantially the entire surface of the base component 14 and of the cover component 16 are covered with an anodization layer 34.
9. The package 10 of claim 8 characterized in that the surface 36 of the base component 14 to be bonded to said electronic device 12 is free of an anodization layer 34.
10. The package 10 of claim 8 characterized in that a portion of the surface of said cover component 16 enclosed within said cavity 22 is free of an anodization layer 34. 11. The package 10 of claim 2 characterized in that said base component 14 and said cover component 16 are comprised of an aluminum based alloy containing up to about 1.5 percent by weight of manganese.
12. The package 10 of claim 11 characterized in that said base component 14 and said cover component 16 are comprised of an aluminum based alloy containing about 0.12 percent by weight copper and about 1.2 percent by weight manganese.
13. The package 10 of claim 6 characterized in that said electronic device 12 is bonded to said base component 14 and electrically connected to said leadframe 24; and said leadframe 24 is bonded to said base component 14 and to said cover component 16.
14. A package 50 for encasing an electronic device 12, characterized by: an aluminum or aluminum alloy base component 14; a window frame component 52 having first and second surfaces; a leadframe 24 disposed between and adapted to be bonded to said base component 14 and to the first surface of said window frame component 52; a cover component 16 adapted to be bonded to the second surface of said window frame component 52; and an anodization layer 34 covering at least that portion of said base 14 and cover 16 components exposed to the atmosphere.
15. The package 50 of claim 14 characterized in that said window frame component 52 is comprised of aluminum or an aluminum based alloy.
16. The package 50 of claim 15 characterized in that said window frame component 52 contains an anodization layer 34 over at least that portion of the surface exposed to the atmosphere.
17. The package 50 of claim 16 characterized in that the thickness of the anodization layer 34 is in the range of from about 0.25 microns (10 microinches) to about 50 microns (2000 microinches) .
18. The package 50 of claim 17 characterized in that the thickness of the anodization layer 34 is in the range of from about 1.25 microns (50 microinches) to about 5 microns (200 microinches).
19. The package 50 of claim 17 characterized in that said leadframe 24 is bondable to said base component 14 and to said first side of said window frame component 52 by a sealing glass 32 or a polymer adhesive 32. 20. The package 50 of claim 19 characterized in that the seal area of said base component 14 and said first side of said window frame component 52 is covered by an anodization layer 34.
21. The package 50 of claim 20 characterized in that the surface of the anodization layer 34 has been roughened to improve bond strength.
22. The package 50 of claim 21 characterized in that said leadframe 24 is bonded to said base component 14 and to said window frame component 52 by a resin adhesive 34.
23. The package 50 of claim 22 characterized in that said leadframe 24 is disposed between and bonded to said base component 14 and to said first side of said window frame component 52.
24. The package 50 of claim 17 characterized in that substantially the entire surface of the base component 14 and of the cover component 16' are covered with an anodization layer 34.
25. The package 50 of claim 24 characterized in that the surface 36 of said base component 14 to be bonded to said electronic device 12 is free of an anodization layer 34. 26. The package 50 of claim 24 characterized in that the surface 54 of said cover component 16 enclosed within said cavity is free of an anodization layer 34.
27. The package 50 of claim 17 characterized in that said base 14, window frame 52 and cover components 16* are comprised of an aluminum based alloy containing up to about 1.5 percent manganese.
28. The package 50 of claim 27 characterized in that said base 14, window frame 52 and cover components 16' are comprised of an aluminum based alloy containing about 0.12 percent by weight copper and about 1.2 percent by weight manganese.
29. The package 50 of claim 23 characterized in that said second surface of said window frame 52 is adapted to be bonded to said cover component 16 by a bonding agent 56 selected from the group consisting of thermoset and thermoplastic adhesives.
30. The package 50 of claim 29 characterized in that said electronic device 12 is bonded to said base component 14 and electrically connected to said leadframe 24; and said cover component 16' is bonded to said second surface of said window frame component 52. 31. A process for assembling a package 10, 50 for encasing an electronic device 12 characterized by the steps of: providing a base component 14 and a cover component 16, said base 14 and cover 16 components comprised of aluminum or an aluminum based alloy; anodizing at least that portion of the surfaces of said base 14 and cover 16 components exposed to the atmosphere; disposing a leadframe 24 between said base component 14 and said cover component 16; and bonding said leadframe 24 to said base component 14 and to said cover component 16 subsequent to connecting said electronic device 12 to said base component 14 and to said leadframe 24.
32. The process of claim 31 characterized by the step of sealing said anodization layer 34.
33. The process of claim 32 characterized by masking a portion of either said base component 14 or said cover component 16 or both prior to anodization.
34. The process of claim 32 characterized by anodizing the entire surfaces of the base 14 and cover components 16 and subsequently removing a portion of said anodization layer 34.
35. The process of claim 32 characterized by anodizing the seal area of the base component 14 and the cover component 16. 36. The process of claim 35 characterized by the step of increasing the surface roughness of the anodization layer 34.
37. The process of claim 36 characterized by said bonding step comprises disposing a resin adhesive 32 between said leadframe 24 and said base component 14 and said leadframe 24 and said cover component 16 and heating to a temperature of from about 145°C to about 155°C for a time in the range of from about 1 hour to about 2 hours.
38. The process of claim 36 characterized by disposing a window frame component 52 between said leadframe 24 and said cover component 16 and bonding said window frame 52 to said leadframe 24 and to said cover component 16.
39. The process of claim 38 characterized by bonding said cover component 16' to said window frame component 52 subsequent to bonding said window frame 52 to said leadframe 24.
40. The process of claim 38 characterized by selecting said window frame 52 to be aluminum or an aluminum alloy.
41. The process of claim 40 characterized by selecting said window frame 52, said base component 14 and said cover component 16' to be an aluminum based alloy containing up to about 1.5 percent by weight manganese. 42. The process of claim 41 characterized by selecting said window frame 52, said base component 14 and said cover component 16' to be an aluminum based alloy containing about 0.12 percent by weight copper and about 1.2 percent by weight manganese.
EP89911147A 1988-10-05 1989-09-14 Aluminum alloy semiconductor packages Expired - Lifetime EP0438444B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP95117178A EP0700083B1 (en) 1988-10-05 1989-09-14 Aluminium alloy base semiconductor packages

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US07/253,639 US4939316A (en) 1988-10-05 1988-10-05 Aluminum alloy semiconductor packages
US253639 1988-10-05
PCT/US1989/004135 WO1990004262A1 (en) 1988-10-05 1989-09-14 Aluminum alloy semiconductor packages

Related Child Applications (2)

Application Number Title Priority Date Filing Date
EP95117178A Division EP0700083B1 (en) 1988-10-05 1989-09-14 Aluminium alloy base semiconductor packages
EP95117178.4 Division-Into 1989-09-14

Publications (3)

Publication Number Publication Date
EP0438444A1 EP0438444A1 (en) 1991-07-31
EP0438444A4 true EP0438444A4 (en) 1992-07-22
EP0438444B1 EP0438444B1 (en) 1996-10-02

Family

ID=22961101

Family Applications (2)

Application Number Title Priority Date Filing Date
EP95117178A Expired - Lifetime EP0700083B1 (en) 1988-10-05 1989-09-14 Aluminium alloy base semiconductor packages
EP89911147A Expired - Lifetime EP0438444B1 (en) 1988-10-05 1989-09-14 Aluminum alloy semiconductor packages

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP95117178A Expired - Lifetime EP0700083B1 (en) 1988-10-05 1989-09-14 Aluminium alloy base semiconductor packages

Country Status (11)

Country Link
US (1) US4939316A (en)
EP (2) EP0700083B1 (en)
JP (2) JP3016227B2 (en)
KR (1) KR0154111B1 (en)
AU (1) AU629864B2 (en)
CA (1) CA1296815C (en)
DE (2) DE68929103T2 (en)
HK (2) HK1008114A1 (en)
MX (1) MX163728B (en)
PH (1) PH25542A (en)
WO (1) WO1990004262A1 (en)

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5367125A (en) * 1989-01-20 1994-11-22 Dassault Electronique Aluminum based article having an insert with vitreous material hermetically sealed thereto
FR2642257B1 (en) * 1989-01-20 1996-05-24 Dassault Electronique GLASS-ALUMINUM SEALING PROCESS, PARTICULARLY FOR ELECTRICAL THROUGHING OF HYBRID CIRCUIT BOX, CORRESPONDING COMPOSITE OBJECT AND GLASS COMPOSITION
US5250363A (en) * 1989-10-13 1993-10-05 Olin Corporation Chromium-zinc anti-tarnish coating for copper foil having a dark color
US5073521A (en) * 1989-11-15 1991-12-17 Olin Corporation Method for housing a tape-bonded electronic device and the package employed
US5098864A (en) * 1989-11-29 1992-03-24 Olin Corporation Process for manufacturing a metal pin grid array package
US5043534A (en) * 1990-07-02 1991-08-27 Olin Corporation Metal electronic package having improved resistance to electromagnetic interference
US5066368A (en) * 1990-08-17 1991-11-19 Olin Corporation Process for producing black integrally colored anodized aluminum components
US5122858A (en) * 1990-09-10 1992-06-16 Olin Corporation Lead frame having polymer coated surface portions
US5148265A (en) 1990-09-24 1992-09-15 Ist Associates, Inc. Semiconductor chip assemblies with fan-in leads
US5261157A (en) * 1991-01-22 1993-11-16 Olin Corporation Assembly of electronic packages by vacuum lamination
US5132773A (en) * 1991-02-06 1992-07-21 Olin Corporation Carrier ring having first and second ring means with bonded surfaces
JPH05198575A (en) * 1991-05-01 1993-08-06 Kobe Steel Ltd Corrosion-resistant a1 or a1 alloy material
US5144709A (en) * 1991-05-03 1992-09-08 Olin Corporation Formation of shapes in a metal workpiece
US5272800A (en) * 1991-07-01 1993-12-28 Olin Corporation Method and apparatus for forming and positioning a preform on a workpiece
US5343073A (en) * 1992-01-17 1994-08-30 Olin Corporation Lead frames having a chromium and zinc alloy coating
US5300158A (en) * 1992-05-26 1994-04-05 Olin Corporation Protective coating having adhesion improving characteristics
US5239131A (en) * 1992-07-13 1993-08-24 Olin Corporation Electronic package having controlled epoxy flow
US5367196A (en) * 1992-09-17 1994-11-22 Olin Corporation Molded plastic semiconductor package including an aluminum alloy heat spreader
TW238419B (en) 1992-08-21 1995-01-11 Olin Corp
US5608267A (en) * 1992-09-17 1997-03-04 Olin Corporation Molded plastic semiconductor package including heat spreader
US5317107A (en) * 1992-09-24 1994-05-31 Motorola, Inc. Shielded stripline configuration semiconductor device and method for making the same
US5324888A (en) * 1992-10-13 1994-06-28 Olin Corporation Metal electronic package with reduced seal width
US6262477B1 (en) 1993-03-19 2001-07-17 Advanced Interconnect Technologies Ball grid array electronic package
US5477008A (en) * 1993-03-19 1995-12-19 Olin Corporation Polymer plug for electronic packages
US5650592A (en) * 1993-04-05 1997-07-22 Olin Corporation Graphite composites for electronic packaging
AU7604494A (en) * 1993-09-13 1995-04-03 Olin Corporation Flip chip in metal electronic packages
US5540378A (en) * 1993-09-27 1996-07-30 Olin Corporation Method for the assembly of an electronic package
AU7873894A (en) * 1993-10-12 1995-05-04 Olin Corporation Edge connectable metal package
US5360942A (en) * 1993-11-16 1994-11-01 Olin Corporation Multi-chip electronic package module utilizing an adhesive sheet
US5455386A (en) * 1994-01-14 1995-10-03 Olin Corporation Chamfered electronic package component
US5644102A (en) * 1994-03-01 1997-07-01 Lsi Logic Corporation Integrated circuit packages with distinctive coloration
US5578869A (en) * 1994-03-29 1996-11-26 Olin Corporation Components for housing an integrated circuit device
WO1995028740A1 (en) * 1994-04-14 1995-10-26 Olin Corporation Electronic package having improved wire bonding capability
AU2371795A (en) * 1994-05-17 1995-12-05 Olin Corporation Electronic packages with improved electrical performance
US5436407A (en) * 1994-06-13 1995-07-25 Integrated Packaging Assembly Corporation Metal semiconductor package with an external plastic seal
US5455387A (en) * 1994-07-18 1995-10-03 Olin Corporation Semiconductor package with chip redistribution interposer
US5629835A (en) * 1994-07-19 1997-05-13 Olin Corporation Metal ball grid array package with improved thermal conductivity
US5573845A (en) * 1994-12-09 1996-11-12 Olin Corporation Superficial coating layer having acicular structures for electrical conductors
US5545850A (en) * 1995-01-13 1996-08-13 Olin Corporation Guard ring for integrated circuit package
KR0122423Y1 (en) * 1995-03-23 1998-10-01 김광호 Fully automatic washing machine
TW309654B (en) * 1995-03-29 1997-07-01 Olin Corp
US5534356A (en) * 1995-04-26 1996-07-09 Olin Corporation Anodized aluminum substrate having increased breakdown voltage
US5650663A (en) * 1995-07-03 1997-07-22 Olin Corporation Electronic package with improved thermal properties
AU6450096A (en) * 1995-07-14 1997-02-18 Olin Corporation Metal ball grid electronic package
JP2000500619A (en) * 1995-11-20 2000-01-18 オリン コーポレイション Ground ring for metal electronic package
US5764484A (en) * 1996-11-15 1998-06-09 Olin Corporation Ground ring for a metal electronic package
JP2000500618A (en) * 1995-11-22 2000-01-18 オリン コーポレイション Semiconductor package having ground or power ring
US5817544A (en) * 1996-01-16 1998-10-06 Olin Corporation Enhanced wire-bondable leadframe
US5805427A (en) * 1996-02-14 1998-09-08 Olin Corporation Ball grid array electronic package standoff design
US5801074A (en) * 1996-02-20 1998-09-01 Kim; Jong Tae Method of making an air tight cavity in an assembly package
US5892278A (en) * 1996-05-24 1999-04-06 Dai Nippon Printingco., Ltd. Aluminum and aluminum alloy radiator for semiconductor device and process for producing the same
US5943558A (en) * 1996-09-23 1999-08-24 Communications Technology, Inc. Method of making an assembly package having an air tight cavity and a product made by the method
US5952083A (en) * 1997-10-21 1999-09-14 Advanced Technology Interconnect, Inc. Aluminum alloys for electronic components
KR100265563B1 (en) * 1998-06-29 2000-09-15 김영환 Ball grid array package and fabricating method thereof
DE10039646A1 (en) * 1999-08-18 2001-03-08 Murata Manufacturing Co Metal cover placed over and enclosing e.g. piezoelectric resonator on circuit substrate, includes insulating layer on and around edges bordering its open end
KR100723454B1 (en) * 2004-08-21 2007-05-30 페어차일드코리아반도체 주식회사 Power module package with high heat dissipation capacity and its manufacturing method
JP2003007880A (en) * 2001-06-20 2003-01-10 Sony Corp Hollow package and manufacturing method therefor
US20030112710A1 (en) * 2001-12-18 2003-06-19 Eidson John C. Reducing thermal drift in electronic components
JP2007019107A (en) * 2005-07-05 2007-01-25 Shinko Electric Ind Co Ltd Semiconductor device and its manufacturing method
KR100656300B1 (en) 2005-12-29 2006-12-11 (주)웨이브닉스이에스피 3D aluminum package module, manufacturing method thereof and passive element manufacturing method applied to 3D aluminum package module
US20100304180A1 (en) * 2007-12-04 2010-12-02 E.I Du Pont De Nemours And Company Bendable circuit structure for led mounting and interconnection
DE102008004642A1 (en) * 2008-01-16 2009-07-23 Robert Bosch Gmbh Condensation trap for humidity-sensitive devices
CN101578018B (en) * 2008-05-09 2012-07-25 富准精密工业(深圳)有限公司 Combination piece of metal and plastic and manufacture method thereof
KR101716919B1 (en) * 2009-07-30 2017-03-15 니치아 카가쿠 고교 가부시키가이샤 Light emitting device and method for manufacturing same
KR101064084B1 (en) * 2010-03-25 2011-09-08 엘지이노텍 주식회사 Light emitting device package and manufacturing method thereof
KR101095202B1 (en) * 2010-06-15 2011-12-16 삼성전기주식회사 Hybrid heat sink and its manufacturing method
US10636735B2 (en) * 2011-10-14 2020-04-28 Cyntec Co., Ltd. Package structure and the method to fabricate thereof
FR2984679B1 (en) * 2011-12-15 2015-03-06 Valeo Sys Controle Moteur Sas THERMALLY CONDUCTIVE AND ELECTRICALLY INSULATING CONNECTION BETWEEN AT LEAST ONE ELECTRONIC COMPONENT AND A RADIATOR IN ALL OR METALLIC PORTION
US9545024B2 (en) 2012-05-29 2017-01-10 Apple Inc. Diamond cutting tools
JP6436343B2 (en) * 2014-11-18 2018-12-12 富士電機株式会社 Sensor unit for infrared gas analyzer and detector for infrared gas analyzer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4572924A (en) * 1983-05-18 1986-02-25 Spectrum Ceramics, Inc. Electronic enclosures having metal parts
US4656499A (en) * 1982-08-05 1987-04-07 Olin Corporation Hermetically sealed semiconductor casing

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3871018A (en) * 1971-03-26 1975-03-11 Ferranti Ltd Construction of packages for semiconductor devices
US3943623A (en) * 1974-08-23 1976-03-16 Nitto Electric Industrial Co., Ltd. Hollow cavity package electronic unit
US4105861A (en) * 1975-09-29 1978-08-08 Semi-Alloys, Inc. Hermetically sealed container for semiconductor and other electronic devices
US4410927A (en) * 1982-01-21 1983-10-18 Olin Corporation Casing for an electrical component having improved strength and heat transfer characteristics
US4461924A (en) * 1982-01-21 1984-07-24 Olin Corporation Semiconductor casing
US4480262A (en) * 1982-07-15 1984-10-30 Olin Corporation Semiconductor casing
US4594770A (en) * 1982-07-15 1986-06-17 Olin Corporation Method of making semiconductor casing
CA1201211A (en) * 1982-08-05 1986-02-25 Olin Corporation Hermetically sealed semiconductor casing
US4521469A (en) * 1982-11-22 1985-06-04 Olin Corporation Casing for electronic components
US4525422A (en) * 1982-11-22 1985-06-25 Olin Corporation Adhesion primers for encapsulating epoxies
US4582556A (en) * 1982-11-22 1986-04-15 Olin Corporation Adhesion primers for encapsulating epoxies
US4524238A (en) * 1982-12-29 1985-06-18 Olin Corporation Semiconductor packages
US4498121A (en) * 1983-01-13 1985-02-05 Olin Corporation Copper alloys for suppressing growth of Cu-Al intermetallic compounds
JPH0612796B2 (en) * 1984-06-04 1994-02-16 株式会社日立製作所 Semiconductor device
US4542259A (en) * 1984-09-19 1985-09-17 Olin Corporation High density packages
JPS61281541A (en) * 1985-06-06 1986-12-11 Sumitomo Electric Ind Ltd Packages for semiconductor devices
JPH02501967A (en) * 1987-01-12 1990-06-28 オリン コーポレーション Method for manufacturing high-strength lead frames that can be molded into semiconductor packages
US4769345A (en) * 1987-03-12 1988-09-06 Olin Corporation Process for producing a hermetically sealed package for an electrical component containing a low amount of oxygen and water vapor
JPH0724290B2 (en) * 1987-03-23 1995-03-15 住友金属工業株式会社 Method of manufacturing integrated circuit container

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4656499A (en) * 1982-08-05 1987-04-07 Olin Corporation Hermetically sealed semiconductor casing
US4572924A (en) * 1983-05-18 1986-02-25 Spectrum Ceramics, Inc. Electronic enclosures having metal parts

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 011, no. 143 (E-504)9 May 1987 & JP-A-61 281 541 ( SUMITOMO ELECTRIC IND LTD ) 11 December 1986 *
PATENT ABSTRACTS OF JAPAN vol. 013, no. 226 (E-763)25 May 1989 & JP-A-01 035 940 ( SUMITOMO METAL IND LTD ) 7 February 1989 *

Also Published As

Publication number Publication date
EP0700083A2 (en) 1996-03-06
HK1014611A1 (en) 1999-09-30
KR0154111B1 (en) 1998-10-15
EP0438444A1 (en) 1991-07-31
PH25542A (en) 1991-07-24
EP0700083A3 (en) 1996-04-10
AU4337389A (en) 1990-05-01
EP0700083B1 (en) 1999-11-24
US4939316A (en) 1990-07-03
CA1296815C (en) 1992-03-03
JP2000068395A (en) 2000-03-03
HK1008114A1 (en) 1999-04-30
KR900702565A (en) 1990-12-07
DE68927296T2 (en) 1997-04-30
JP3016227B2 (en) 2000-03-06
JPH04505075A (en) 1992-09-03
DE68927296D1 (en) 1996-11-07
JP3168196B2 (en) 2001-05-21
DE68929103D1 (en) 1999-12-30
AU629864B2 (en) 1992-10-15
DE68929103T2 (en) 2000-06-29
WO1990004262A1 (en) 1990-04-19
EP0438444B1 (en) 1996-10-02
MX163728B (en) 1992-06-17

Similar Documents

Publication Publication Date Title
US4939316A (en) Aluminum alloy semiconductor packages
US5023398A (en) Aluminum alloy semiconductor packages
US5013871A (en) Kit for the assembly of a metal electronic package
US5155299A (en) Aluminum alloy semiconductor packages
US7125429B2 (en) Protecting resin-encapsulated components
US5122858A (en) Lead frame having polymer coated surface portions
US5073521A (en) Method for housing a tape-bonded electronic device and the package employed
US5043534A (en) Metal electronic package having improved resistance to electromagnetic interference
US5343073A (en) Lead frames having a chromium and zinc alloy coating
US4521469A (en) Casing for electronic components
EP0771519A1 (en) Integrally bumped electronic package components
US5563442A (en) Leadframe having exposed, solderable outer lead ends
GB2134029A (en) Adhesion primers for encapsulating epoxies
US4582556A (en) Adhesion primers for encapsulating epoxies
JPH04216608A (en) Manufacture of solid electrolytic capacitor
JP2522405B2 (en) Chip type solid electrolytic capacitor
JP3433479B2 (en) Method for manufacturing solid electrolytic capacitor
JPH0121628B2 (en)
JPH0482211A (en) Manufacture of chip type solid electrolytic capacitor

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 19901228

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): DE FR GB IT NL

A4 Supplementary search report drawn up and despatched

Effective date: 19920529

AK Designated contracting states

Kind code of ref document: A4

Designated state(s): DE FR GB IT NL

17Q First examination report despatched

Effective date: 19930722

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

ITF It: translation for a ep patent filed
AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE FR GB IT NL

DX Miscellaneous (deleted)
REF Corresponds to:

Ref document number: 68927296

Country of ref document: DE

Date of ref document: 19961107

ET Fr: translation filed
PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 19980820

Year of fee payment: 10

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 19980826

Year of fee payment: 10

Ref country code: DE

Payment date: 19980826

Year of fee payment: 10

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 19990914

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 19990914

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20000531

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20000701

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: NL

Payment date: 20000824

Year of fee payment: 12

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20020401

NLV4 Nl: lapsed or anulled due to non-payment of the annual fee

Effective date: 20020401

NLV4 Nl: lapsed or anulled due to non-payment of the annual fee

Effective date: 20020401

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES;WARNING: LAPSES OF ITALIAN PATENTS WITH EFFECTIVE DATE BEFORE 2007 MAY HAVE OCCURRED AT ANY TIME BEFORE 2007. THE CORRECT EFFECTIVE DATE MAY BE DIFFERENT FROM THE ONE RECORDED.

Effective date: 20050914