GB1066373A - Improvements in and relating to supports for semiconductor layers - Google Patents
Improvements in and relating to supports for semiconductor layersInfo
- Publication number
- GB1066373A GB1066373A GB18618/64A GB1861864A GB1066373A GB 1066373 A GB1066373 A GB 1066373A GB 18618/64 A GB18618/64 A GB 18618/64A GB 1861864 A GB1861864 A GB 1861864A GB 1066373 A GB1066373 A GB 1066373A
- Authority
- GB
- United Kingdom
- Prior art keywords
- cadmium
- photo
- semi
- minutes
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 abstract 4
- 150000001875 compounds Chemical class 0.000 abstract 3
- 229910052788 barium Inorganic materials 0.000 abstract 2
- 238000009835 boiling Methods 0.000 abstract 2
- 229910052791 calcium Inorganic materials 0.000 abstract 2
- 229910052749 magnesium Inorganic materials 0.000 abstract 2
- 150000003346 selenoethers Chemical class 0.000 abstract 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 abstract 1
- 239000007864 aqueous solution Substances 0.000 abstract 1
- 229910052790 beryllium Inorganic materials 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- XIEPJMXMMWZAAV-UHFFFAOYSA-N cadmium nitrate Inorganic materials [Cd+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XIEPJMXMMWZAAV-UHFFFAOYSA-N 0.000 abstract 1
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 abstract 1
- 150000001805 chlorine compounds Chemical class 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- NMHMNPHRMNGLLB-UHFFFAOYSA-N phloretic acid Chemical compound OC(=O)CCC1=CC=C(O)C=C1 NMHMNPHRMNGLLB-UHFFFAOYSA-N 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 abstract 1
- 229910052712 strontium Inorganic materials 0.000 abstract 1
- 150000004763 sulfides Chemical class 0.000 abstract 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 abstract 1
- 150000004772 tellurides Chemical class 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01G—WEIGHING
- G01G9/00—Methods of, or apparatus for, the determination of weight, not provided for in groups G01G1/00 - G01G7/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Light Receiving Elements (AREA)
Abstract
1,066,373. Semi-conductor devices. PHILIPS ELECTRONIC, and ASSOCIATED INDUSTRIES Ltd. May 5, 1964 [May 6, 1963], No. 18618/64. Heading H1K. An insulating support for semi-conductor sulphides, selenides or tellurides is passivated by applying a compound, other than a semiconductor sulphide, selenide or telluride, of one of the metals Be, Mg, Ca, Sr, Ba, A1, Zn and Cd and then heating the support to at least 400 C. More than one compound may be applied. In a preferred embodiment glass plates are dipped for 2 minutes in a boiling aqueous solution of cadmium chloride, dried, and heated in air for 5 minutes at 600 C. The plates are then washed in boiling water and coated with a photo-sensitive layer of cadmium sulphide. In a modification the cadmium chloride solution is kept at room temperature. Other preferred compounds are cadmium nitrate and the chlorides of Ca, Ba and Mg. The invention may be applied in the manufacture of photo-electric cells or radiation-controlled unipolar transistors.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR933812 | 1963-05-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1066373A true GB1066373A (en) | 1967-04-26 |
Family
ID=8803158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB18618/64A Expired GB1066373A (en) | 1963-05-06 | 1964-05-05 | Improvements in and relating to supports for semiconductor layers |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1496588A1 (en) |
| GB (1) | GB1066373A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2372375A (en) * | 1988-05-11 | 2002-08-21 | Santa Barbara Res Ct | Graded layer passivation of group 2-6 infrared photodetectors |
-
1964
- 1964-05-05 GB GB18618/64A patent/GB1066373A/en not_active Expired
- 1964-05-05 DE DE19641496588 patent/DE1496588A1/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2372375A (en) * | 1988-05-11 | 2002-08-21 | Santa Barbara Res Ct | Graded layer passivation of group 2-6 infrared photodetectors |
| GB2372375B (en) * | 1988-05-11 | 2003-01-15 | Santa Barbara Res Ct | Graded layer passivation of group II-VI infrared photodetectors |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1496588A1 (en) | 1969-06-19 |
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