GB1144147A - Improvements in or relating to semiconductor devices - Google Patents
Improvements in or relating to semiconductor devicesInfo
- Publication number
- GB1144147A GB1144147A GB19161/66A GB1916166A GB1144147A GB 1144147 A GB1144147 A GB 1144147A GB 19161/66 A GB19161/66 A GB 19161/66A GB 1916166 A GB1916166 A GB 1916166A GB 1144147 A GB1144147 A GB 1144147A
- Authority
- GB
- United Kingdom
- Prior art keywords
- metal
- semi
- conductor
- emitter
- wave number
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 7
- 229910052751 metal Inorganic materials 0.000 abstract 8
- 239000002184 metal Substances 0.000 abstract 8
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052723 transition metal Inorganic materials 0.000 abstract 1
- 150000003624 transition metals Chemical group 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Abstract
1,144,147. Transistors. SIEMENS A.G. 2 May, 1966 [3 May, 1965], No. 19161/66. Heading H1K. In a semi-conductor device such as metal base transistor, with a metal layer between two semiconductor layers, reflection at the "collector" junction is minimized by employing a semiconductor where the wave number k at the conduction band minima is other than zero (e.g. germanium or silicon) and the average wave number vector in the semi-conductor at the end of the conduction band is made substantially equal to the average wave number vector in the metal. The metal layer is a transition metal, semi-metal (e.g. antimony or bismuth) or an alloy with its composition selected to provide the correct k-number. Orientation of the semi-conductor is utilized since this affects the k-number. Fig. 2 shows a metal base transistor with N-type emitter and collector regions 5 and 7 and intermediate metallic layer 6. The emitter and collector regions are orientated in the same direction. The metal has a high k-value compared with the material of the emitter to give a high "refracting index" in the metal relative to the semi-conductor to produce tightly bunched electron beams. At least the emitter zone should be monocrystalline.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0096890 | 1965-05-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1144147A true GB1144147A (en) | 1969-03-05 |
Family
ID=7520359
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB19161/66A Expired GB1144147A (en) | 1965-05-03 | 1966-05-02 | Improvements in or relating to semiconductor devices |
Country Status (6)
| Country | Link |
|---|---|
| AT (1) | AT266217B (en) |
| CH (1) | CH468717A (en) |
| DE (1) | DE1514457A1 (en) |
| GB (1) | GB1144147A (en) |
| NL (1) | NL6605020A (en) |
| SE (1) | SE323148B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5032538A (en) * | 1979-08-10 | 1991-07-16 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology utilizing selective epitaxial growth methods |
| US5298787A (en) * | 1979-08-10 | 1994-03-29 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor |
-
1965
- 1965-05-03 DE DE19651514457 patent/DE1514457A1/en active Pending
-
1966
- 1966-04-14 NL NL6605020A patent/NL6605020A/xx unknown
- 1966-05-02 CH CH634766A patent/CH468717A/en unknown
- 1966-05-02 AT AT413266A patent/AT266217B/en active
- 1966-05-02 GB GB19161/66A patent/GB1144147A/en not_active Expired
- 1966-05-03 SE SE6068/66A patent/SE323148B/xx unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5032538A (en) * | 1979-08-10 | 1991-07-16 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology utilizing selective epitaxial growth methods |
| US5298787A (en) * | 1979-08-10 | 1994-03-29 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| AT266217B (en) | 1968-11-11 |
| NL6605020A (en) | 1966-11-04 |
| CH468717A (en) | 1969-02-15 |
| SE323148B (en) | 1970-04-27 |
| DE1514457A1 (en) | 1969-10-16 |
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