GB1328320A - Charged-particle beam-forming and imaging sytems - Google Patents

Charged-particle beam-forming and imaging sytems

Info

Publication number
GB1328320A
GB1328320A GB4203671A GB4203671A GB1328320A GB 1328320 A GB1328320 A GB 1328320A GB 4203671 A GB4203671 A GB 4203671A GB 4203671 A GB4203671 A GB 4203671A GB 1328320 A GB1328320 A GB 1328320A
Authority
GB
United Kingdom
Prior art keywords
slit
work
pattern
mask
apertures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4203671A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SRI International Inc
Original Assignee
Stanford Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanford Research Institute filed Critical Stanford Research Institute
Publication of GB1328320A publication Critical patent/GB1328320A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G15/00—Apparatus for electrographic processes using a charge pattern
    • G03G15/22—Apparatus for electrographic processes using a charge pattern involving the combination of more than one step according to groups G03G13/02 - G03G13/20
    • G03G15/32—Apparatus for electrographic processes using a charge pattern involving the combination of more than one step according to groups G03G13/02 - G03G13/20 in which the charge pattern is formed dotwise, e.g. by a thermal head
    • G03G15/321—Apparatus for electrographic processes using a charge pattern involving the combination of more than one step according to groups G03G13/02 - G03G13/20 in which the charge pattern is formed dotwise, e.g. by a thermal head by charge transfer onto the recording material in accordance with the image
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/027—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/09—Treatments involving charged particles
    • H05K2203/092—Particle beam, e.g. using an electron beam or an ion beam
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107—Using laser light

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

1328320 Removing material by fusion STANFORD RESEARCH INSTITUTE 9 Sept 1971 [21 Sept 1970] 42036/71 Heading B3V [Also in Division H1] In the use of a beam of charged particles for forming a pattern on a workpiece in the manufacture of a diffraction grating, an interdigital pattern for a microwave device, an integrated circuit or the like, the beam is directed at the work through one or more apertures and through a mask including a slit, a strong electric field being maintained between the mask and the work so that the slit focuses the beam transversely of the slit. If the particles are electrons they are used to expose a resist on the surface of the work; ions may be used in the same way or may be implanted in semi-conductive or insulating material, or may react chemically with the work, or may sputter the work. In one example, Fig. 1 (not shown), electrons are focused by a lens on a single aperture which forms a virtual source illuminating the work through the mask. If the latter contains an L- shaped slit, the exposed pattern is an L with the lines reduced in width by the focusing effect to, for example, ¢ micron. If the source comprises a column of apertures suitably spaced, the exposed pattern is a number of parallel horizontal lines joined at one edge by a vertical line (Fig. 4B, not shown). An interdigitated pattern may be produced by two exposures of a shallow U- shaped slit (Fig. 5A, not shown) illuminated by a column of apertures, one limb of the U being masked for each exposure and the beams on the mask being displaced or deflected between exposures to interleave the two patterns (Fig. 5B, not shown). Alternatively the source may comprise two columns of apertures (Fig. 6, not shown) and an auxiliary mask (Figs. 7 and 8, not shown) is provided to prevent each column from illuminating one limb of the U, so that the interdigitated pattern may be produced by a single exposure. The slit may have any desired shape such as a deep U, an arc, or a cross (Figs. 9A-9C, not shown), and the width of the slit need not be constant.
GB4203671A 1970-09-21 1971-09-09 Charged-particle beam-forming and imaging sytems Expired GB1328320A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7389870A 1970-09-21 1970-09-21

Publications (1)

Publication Number Publication Date
GB1328320A true GB1328320A (en) 1973-08-30

Family

ID=22116466

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4203671A Expired GB1328320A (en) 1970-09-21 1971-09-09 Charged-particle beam-forming and imaging sytems

Country Status (5)

Country Link
US (1) US3614423A (en)
DE (1) DE2146941A1 (en)
FR (1) FR2106298A5 (en)
GB (1) GB1328320A (en)
NL (1) NL7112975A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2231525A (en) * 1989-05-18 1990-11-21 Colin John Humphreys Preparation of substrates.

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3689782A (en) * 1971-07-01 1972-09-05 Thomson Csf Electronic transducer for a piezoelectric line
DE2446789A1 (en) * 1974-09-27 1976-09-02 Siemens Ag BODY RAY OPTICAL DEVICE FOR BODY RADIATION OF A PREPARATION
US3924136A (en) * 1975-02-18 1975-12-02 Stanford Research Inst Charged particle apodized pattern imaging and exposure system
DE2644208C3 (en) * 1976-09-30 1981-04-30 Siemens AG, 1000 Berlin und 8000 München Process for the production of a monocrystalline layer on a substrate
FR2391538A1 (en) * 1977-05-16 1978-12-15 Asahi Chemical Ind THIN LAYER STRENGTH AND MANUFACTURING PROCESS
DE2739502C3 (en) * 1977-09-02 1980-07-03 Ibm Deutschland Gmbh, 7000 Stuttgart Method for exposure by corpuscular ray shadows and device for carrying out the method
US4382186A (en) * 1981-01-12 1983-05-03 Energy Sciences Inc. Process and apparatus for converged fine line electron beam treatment of objects
US4446373A (en) * 1981-01-12 1984-05-01 Sony Corporation Process and apparatus for converged fine line electron beam treatment objects
US4465934A (en) * 1981-01-23 1984-08-14 Veeco Instruments Inc. Parallel charged particle beam exposure system
US4559102A (en) * 1983-05-09 1985-12-17 Sony Corporation Method for recrystallizing a polycrystalline, amorphous or small grain material
US4592799A (en) * 1983-05-09 1986-06-03 Sony Corporation Method of recrystallizing a polycrystalline, amorphous or small grain material
US4703256A (en) * 1983-05-09 1987-10-27 Sony Corporation Faraday cups
US8878147B2 (en) * 2010-09-07 2014-11-04 Joseph C. Robinson Method and apparatus for in situ preparation of serial planar surfaces for microscopy

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3491236A (en) * 1967-09-28 1970-01-20 Gen Electric Electron beam fabrication of microelectronic circuit patterns

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2231525A (en) * 1989-05-18 1990-11-21 Colin John Humphreys Preparation of substrates.

Also Published As

Publication number Publication date
DE2146941A1 (en) 1972-03-30
FR2106298A5 (en) 1972-04-28
US3614423A (en) 1971-10-19
NL7112975A (en) 1972-03-23

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees