GB1493814A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1493814A
GB1493814A GB46514/74A GB4651474A GB1493814A GB 1493814 A GB1493814 A GB 1493814A GB 46514/74 A GB46514/74 A GB 46514/74A GB 4651474 A GB4651474 A GB 4651474A GB 1493814 A GB1493814 A GB 1493814A
Authority
GB
United Kingdom
Prior art keywords
metal
semiconductor
oct
leadthrough
recrystallized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB46514/74A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB1493814A publication Critical patent/GB1493814A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Bipolar Transistors (AREA)

Abstract

1493814 Semiconductor devices GENERAL ELECTRIC CO 28 Oct 1974 [30 Oct 1973] 46514/74 Heading H1K [Also in Division B1] A conductive leadthrough 22 between opposite surfaces 14, 16 of a semiconductor body 12 is provided by thermomigrating a liquid mass comprising a solution of the semiconductor and a dopant metal from one (111), (110) or (100) surface, on which the metal is initially deposited, across a temperature gradient to the opposite surface, leaving behind a highly metal-doped recrystallized track 22 which forms a PN junction 24 with the body 12. For an N-type Si body 12 the metal may be Al. Ge, SiC and GeAs are also mentioned. As shown the body 12 may carry on its opposed surfaces semiconductor device bodies 18, 20 interconnected via the leadthrough 22. In a modification recrystallized leadthroughs which extend linearly along the body surfaces as well as through the body 12 also provide isolation between devices mounted on the same surface.
GB46514/74A 1973-10-30 1974-10-28 Semiconductor devices Expired GB1493814A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US41129573A 1973-10-30 1973-10-30

Publications (1)

Publication Number Publication Date
GB1493814A true GB1493814A (en) 1977-11-30

Family

ID=23628360

Family Applications (1)

Application Number Title Priority Date Filing Date
GB46514/74A Expired GB1493814A (en) 1973-10-30 1974-10-28 Semiconductor devices

Country Status (6)

Country Link
JP (1) JPS5080788A (en)
CA (1) CA1020290A (en)
DE (1) DE2450902A1 (en)
FR (1) FR2249443B1 (en)
GB (1) GB1493814A (en)
SE (1) SE396846B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2136203A (en) * 1983-03-02 1984-09-12 Standard Telephones Cables Ltd Through-wafer integrated circuit connections

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4042448A (en) * 1975-11-26 1977-08-16 General Electric Company Post TGZM surface etch
JPS57153446A (en) * 1981-03-17 1982-09-22 Nec Corp Semiconductor device for integrated circuit
JPS5853859A (en) * 1981-09-26 1983-03-30 Matsushita Electric Ind Co Ltd Manufacturing method of integrated thin film device
JPS5857015U (en) * 1981-10-14 1983-04-18 東芝テック株式会社 Straight tube fluorescent lamp fixture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2136203A (en) * 1983-03-02 1984-09-12 Standard Telephones Cables Ltd Through-wafer integrated circuit connections

Also Published As

Publication number Publication date
SE7413675L (en) 1975-05-02
FR2249443B1 (en) 1978-09-29
CA1020290A (en) 1977-11-01
JPS5080788A (en) 1975-07-01
DE2450902A1 (en) 1975-05-07
SE396846B (en) 1977-10-03
FR2249443A1 (en) 1975-05-23

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
746 Register noted 'licences of right' (sect. 46/1977)
PCNP Patent ceased through non-payment of renewal fee