GB2061615A - Composite conductors for integrated circuits - Google Patents
Composite conductors for integrated circuits Download PDFInfo
- Publication number
- GB2061615A GB2061615A GB8029822A GB8029822A GB2061615A GB 2061615 A GB2061615 A GB 2061615A GB 8029822 A GB8029822 A GB 8029822A GB 8029822 A GB8029822 A GB 8029822A GB 2061615 A GB2061615 A GB 2061615A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- polycrystalline silicon
- conductor
- silicide
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004020 conductor Substances 0.000 title claims abstract description 61
- 239000002131 composite material Substances 0.000 title claims abstract description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 80
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 52
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 40
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 40
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 33
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000011810 insulating material Substances 0.000 claims abstract description 16
- 239000003870 refractory metal Substances 0.000 claims abstract description 15
- 239000007769 metal material Substances 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 4
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 3
- 238000010438 heat treatment Methods 0.000 claims abstract 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 22
- 239000011733 molybdenum Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 11
- 230000001590 oxidative effect Effects 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000007800 oxidant agent Substances 0.000 claims description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 abstract description 5
- 238000007254 oxidation reaction Methods 0.000 abstract description 5
- 229910045601 alloy Inorganic materials 0.000 abstract description 2
- 239000000956 alloy Substances 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 15
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32105—Oxidation of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The composite conductive structure is formed on an insulating substrate (14) on which is provided a patterned layer of polycrystalline silicon (15a) overlying the layer of insulating material (14). A composite conductor (17) is provided which includes a core (11a) of a refractory metallic material and a layer (18) of a silicide of the metallic material surrounding the exposed surfaces of the core (11a). The composite conductor overlies and is in registry with the patterned layer (15a) of polycrystalline silicon. A layer (19) of silicon dioxide overlies the exposed surfaces of the composite conductor (17) and the patterned layer (15a) of polycrystalline silicon. The structure is produced by depositing a first layer polycrystalline silicon, a layer of a refractory metal (eg Mo) and a second layer of polycrystalline silicon, heating to cause the metal to react with the silicon to form a layer of silicide and then oxidising the outer surface of the silicide. Outer layers of unreacted polycrystalline silicon may be etched off before the oxidation or may be oxidised together with the outer surface of the silicide. The refractory metal may be Mo, W, Ta, Pt, Pd or alloys thereof. <IMAGE>
Description
SPECIFICAwTION Composite conductive structures in integrated circuits and methods of making same
The present invention relates to composite conductive structures in integrated circuit devices and methods of making same.
The composite structure comprises a substrate of semiconductor material having a major surface on which is included a layer of insulating material. A conductor of metallic material selected from the class of refractory metals which are substantially nonreactive with silicon dioxide is provided overlying the insulating layer. A layer of a silicide of the metallic material is provided over the exposed surfaces of the conductor. A layer of silicon dioxide is formed over the exposed surfaces of the layer of the silicide of the metallic mate rial.
The aforementioned composite conductive structure is formed on a substrate of semiconductor material having an overlying layer of insulating material. A conductor of the refractory metal is formed in a desired pattern overlying the layer of insulating material. A layer of a silicide of the refractory metal is formed over the exposed surfaces of the conductor. The substrate including the conductor and the overlying layer of the silicide of the refractory metal is heated in an oxidizing atmosphere at a temperature and for a time to cause the oxidant to react with the layer of the refractory metal silicide to convert a portion thereof to silicon dioxide overlying another portion of the layer of the refractory silicide unconverted to silicon dioxide.Alternatively, the layer of molybdenum silicide may be completely converted to silicon dioxide.
in the fabrication of such composite conductive structures the undersurface of the refractory metal is not converted into a layer of a silicide of the refractory metal and also the overlying layer of silicide adjacent the interface between the silicide layer and the insulating layer may be reduced in thickness and integrity. In the subsequent step of formation of a layer silicon dioxide overlying the silicide layer the under surface of the refractory conductor and particularly the edges thereof may be exposed to the oxidant through the insulating layer and the interface thereof with the layer of silicide. The resultant oxidation of the refractory metal degrades the entire structure.
The present invention is directed to the provision of structures and methods of making same which overcome such problems and difficulties.
In carrying out the present invention in an illustrative embodiment thereof there is pro.
vided a substrate of semiconductor material having an overlying layer of insulating material. A first layer oF polycrys-talline silicon is provided on the layer of insulating material. A conductor of a refractory metal which is sulz- stantially nonreactive with silicon dioxide is provided in a desired pattern overlying the first layer of polycnnstalline silicon. A seccid layer of polycrystalline silicon is provided over the conductor of llnO'I'alIiC material, and the layer of insulating material and the first layer of polycrystalline silicon.The substrate including the conductor of metallic material and the layers of polycryssailine silicon is heated to a tempernture and for a time to cause the layers of polycrystalline silicon to react with a portion of the conductor so form a layer of a silicide of the metallic material surrounding a remaining portion of the conductor unconverted to a silicide thereof.The substrate including the conductor and the layer of the metal silicide and the portion of the first layer polycrystalline silicon underlying the layer of a silicide of the metal is heated in an o;idanl at a temperature and for a time to cause the oxidant to react with the layer of the silicide to convert a portion thereof to silicon dioxide overlying another portion of the layer of the silicide unconverted to silicon dioxide end also to react with the exposed portions of the first layer of polycrystalline silicon and convert these portions to silicon dioxide.
The present invention will be further described, by way of example only, with reference to the following drawings, in which:
Figure 1 is a plan view of a composite body in accordance with one embodiment of the present invention.
Figure 2 is a cross-sectional view of the body of Fig. 1 taken along section lines 2-2 thereof.
Figures 3A-3E show cross-sections of structures representing successive steps in one method of fabricating the composite structure of Figs. 1 and 2 in accordance with the present invention.
Figures 4A-4Eshow cross-sections of structures representing successive steps in another method of fabricating composite structure in accordance with the present invention.
Preferring now to Fig. 1 there is shown a composite body 18 illustrating a first level conductor 11 of molybdenum made in aecor- dance with the present invention. The corn- posite body 10 includes a substrate 12 constituted of a substrate 13 of silicon on which a layer 14 of silicon dioxide has been formed.
The layer 1 4 may represent either gate or field oxide of an integrated circuit, such as an imaging array, a memory array or a signal or data processing circuit. Overlying the insulating layer 14 is a patterned layer 1 spa oF polycrystalline silicon. A composite conductor 16 including a conductor 17 of a refractory metallic material, such as molybdenum, and a layer 1 8 of a silicide thereof surrounding and bonded to the exposed surfaces of the con ductor is provided overlying and in registry with the patterned layer 1 5a of polycrystalline silicon. Overlying and bonded to the layer 18 of molybdenum silicide and to the exposed portions of the patterned layer 1 5a of polycrystalline silicon is provided a layer 19 of silicon dioxide.
A method of fabricating the composite structure of Figs. 1 and 2 will now be described in connection with Figs. 3A-3E. Elements of Figs. 3A-3E identical to elements of
Figs. 1 and 2 are identically designated. A substrate 13 of silicon semiconductor material about 10 mils thick with a layer 14 of thermally-grown silicon dioxide about 1000 Angstroms thick thereon is provided. A layer 1 5 of polycrystalline silicon about 2000 Angstroms thick is deposited over the layer 14 of silicon dioxide by pyrolytic decomposition of silane at about 750 C in a stream of an inert carrier gas such as argon. A layer of molybdenum 3000 Angstroms thick is deposited on the layer 15 of polycrystalline silicon by sputtering.The layer of molybdenum is patterned using photoresist masking and etching techniques well-known in the art to provide a conductor 11, as shown in Fig. 3A. Thereof ter, another layer 16 of polycrystalline silicon about 2000 Angstroms thick is deposited over the molybdenum conductor 11 and the first layer 15 of polycrystalline silicon by pyrolytic decomposition of silane at about 750"C in a stream of an inert carrier gas, such as argon, to provide the structure shown in Fig. 3B.
This structure is heated in an inert atmosphere to a temperature of about 1 000 C for a time to react the polycrystalline silicon in the layers
15 and 16 with the molybdenum conductor
11 to produce a suitably thick layer of molybdenum silicide 18 surrounding the unreacted portion of the molybdenum conductor 11 a and bonded thereto as shown in Fig. 3C.
Next, the unreacted and exposed portions of the layers 15 and 16 of polycrystalline silicon are etched with a suitable silicon etch, such as an aqueous solution of potassium hydroxide which selectively etches the layers of polycrystalline silicon without significantly etching the molybdenum silicide layer 16 or insulating layer 14 of silicon dioxide, to provide the structure shown in Fig. 3D, in which a composite conductor 17 consisting of conductor 11 a of molybdenum and a layer 18 of molybdenum silicide surrounding the exposed surfaces of the conductor 1 a overlies a patterned layer 1 5a of polycrystalline silicon.The composite body of Fig. 3D is then oxidized in an oxidizing atmosphere at a temperature of about 1000"C to cause a portion of the layer
18 of molybdenum silicide and the exposed portions-of the patterned polycrystalline silicon layer 1 5a to be oxidized to provide a layer 19 of silicon dioxide completely covering the composite conductor 17 and the exposed surfaces of the patterned layer 1 5a of polycrystalline silicon, as shown in Fig. 3E. The layer 18 of molybdenum silicide provides a shield between the molybdenum conductor 11 and the oxidizing atmosphere and conveniently is selected to be several thousand Angstroms thick, although it can be substantially thinner.
The initial thickness of the molybdenum silicide layer of the composite body of Fig. 3C is selected to be sufficiently thick to enable a silicon dioxide layer 19 of the desired thickness to be provided, as shown in Fig. 3E. For example, when a second level of metallization is to be provided over the silicon dioxide layer, the silicon dioxide layer would be made sufficiently thick to provide good electrical insulation between the two levels. The thickness of this layer 1 9 of silicon dioxide and the thickness of the remaining portion of the layer 18 of molybdenum silicide is dependent on the time and temperature of the oxidation process. Thus, a composite structure including a molybdenum conductor completely encapsulated by silicon dioxide is provided.
Another method of fabricating a composite structure such as shown in Figs. 1 and 2 will now be described in connection with Figs.
4A-4E. Elements of Figs. 4A-4E identical to elements of Figs. 3A-3E are identically designated. A substrate 13 of silicon semiconductor material about 10 mils thick with a layer 14 of thermally-grown silicon dioxide about 1000 Angstroms thick thereon is provided. A layer 15 of polycrystalline silicon about 2000
Angstroms thick is deposited over the layer 14 of silicon dioxide by pyrolytic decomposition of silane at about 750 C in a stream of an inert carrier gas such as argon. A layer of molybdenum approximately 3000 Angstroms thick is deposited on the layer 15 of polycrystalline silicon by sputtering, for example. The layer of molybdenum is patterned using photoresist masking and etching techniques wellknown in the art to provide a conductor 11, as shown in Fig. 3A.Thereafter, another layer of polycrystalline silicon 16 about 2000 Angstroms thick is deposited over the molybdenum conductor 11 and the first layer 15 of polycrystalline silicon by pyrolytic decomposition of silane at about 750 C in a stream of an inert carrier gas such as argon, for example, as shown in Fig. 4B. Next, the layer of polycrystalline silicon overlying the molybdenum conductor 11 is masked with a photoresist by techniques well-known in the art.
The portions of the first and second polycrystalline silicon layers 15 and 16 not covered with the photoresist are etched with a suitable silicon etch, such as an aqueous solution of potassium hydroxide which selectively etches the polycrystalline without significantly etching the silicon dioxide insulating layer 14 to produce the structure shown in Fig. 4C in which the conductor 11 is covered by an overlying patterned layer 16 of polycrystalline silicon about 2000 Angstroms thick. This structure is heated in an inert atmosphere to a temperature of about 1 000 C for a time to react the polycrystalline silicon in the layers 15 and 16 with the molybdenum conductor 11 to provide a suitably thick layer of molybdenum silicide 18 surrounding the unreacted portion of the molybdenum conductor 11 and bounded thereto, as shown in Fig. 4D.If reaction time is limited, portions of the layers 15 and 16 of poycrystalline silicon may remain unreacted including a portion 1 5a of polycrystalline layer 15 underlying conductor 11, as shown in Fig. 4D. Thus, a composite conductor 17 consisting of conductor 1 1 a of molybdenum and a layer 18 of molybdenum silicide surrounding the exposed surfaces of the conductor 1 1 a overlying a patterned layer 1 5a of polycrystalline silicon is provided.The composite body of Fig. 4D is then oxidized in an oxidizing atmosphere such as oxygen at a temperature of about 1 000 C to cause the outer portion of the polycrystalline silicon layers 15 and 16 to be oxidized into silicon dioxide and also to cause a portion of the layer 18 of molybdenum silicide overlying conductor 1 1 a to be oxidized into silicon dioxide leaving a portion of the layer 18 of molybdenum silicide covering the molybdenum conductor 1 lea. During this process the portion of the layer of molybdenum silicide underlying the conductor 11 a may be increased in thickness due to reaction of conductor 1 1 a with patterned polycrystalline layer 15a.
While the invention has been described and illustrated in connection with composite electrode structures in which the conductor 11 is constituted of molybdenum, it is apparent that in view of the similarity of the compounds of tungsten to the compounds of molybdenum, particularly the oxides and silicides thereof, the conductor 11 may be constituted of tungsten. Also, the conductor 11 may be constituted of other refractory metals which are substantially nonreactive with silicon dioxide such as tantalum, platinum and palladium. In addition, the alloys of the refractory metals mentioned above in which refractory metal constitutes a major portion thereof are suitable for the conductor 11.
While in the method described above the unreacted polycrystalline silicon was removed prior to the oxidation of the molybdenum silicide as shown in Fig. 3D, it will be understood that the oxidation of the silicide may be accomplished without removal of the unreacted polycrystalline silicon of layers 15 and
16.
While the layer of insulating material 14 on which the conductive member 11 of molybdenum was formed is silicon dioxide, it is apparent that the insulating layer may be constituted of any of a number of materials such as, for example, silicon nitride, or a layer of silicon nitride, overlying a layer of silicon dioxide, or combinations thereof which can withstand the fabricating temperatures utilized. Also, while a silicon substrate has been shown as the material on which the insulating layer of silicon dioxide is formed, any of a number of semiconductor substrates may be utilized, for example, gallium arsenide which can withstand the fabricating temperatures utilized.
Claims (11)
1. A composite structure including a substrate of semiconductor material having a major surface, a layer of insulating material overlying said major surface, a patterned layer of polycrystalline silicon overlying said layer of insulating material, a composite conductor including a conductor of a refractory metallic material which is substantially non-reactive with silicon dioxide and a layer of silicide of said metallic material surrounding the exposed surfaces of said conductor, said composite conductor overlying and in registry with said patterned layer of polycrystalline silicon, a layer of silicon dioxide overlying the exposed surfaces of said composite conductor and said patterned layer of polycrystalline silicon.
2. A structure as claimed in Claim 1 wherein the refractory metallic material is molybdenum, tungsten, tantalum, platinum or palladium.
3. A structure a claimed in Claim 1 or
Claim 2 wherein the layer of insulating material is silicon dioxide.
4. A structure as claimed in Claim 1 or
Claim 2 wherein the layer insulating material is constituted of a layer of silicon nitride overlying a layer of silicon dioxide.
5. A structure as claimed in Claim 1 or
Claim 2 wherein the layer insulating material is a composite of silicon dioxide and silicon nitride.
6. A structure as claimed in any one of the preceding claims wherein the semiconductor material is silicon.
7. A method of forming a composite structure which process comprises providing a substrate of semiconductor material having an overlying layer of insulating material, forming a first layer of polycrystalline silicon on said layer of insulating material, forming a conductor of a refractory metal which is substantially non-reactive with silicon dioxide in a desired pattern overlying said first layer of polycrystalline silicon, forming a second layer of polycrystalline silicon over said conductor of metallic material and said first layer of polycrystalline silicon, heating said substrate including said conductor of metallic material and said layers of polycrystalline silicon to a temperature and for a first period of time to cause said layers of polycrystalline silicon to react with a portion of said conductor to form a layer of silicide of said metallic material surrounding a remaining portion of said conduc tor unconverted to a silicide thereof, heating said substrate including said conductor and said layer of said metal silicide and the portion of said first layer of polycrystalline silicon underlying said layer of said metal silicide in an oxidant at a temperature and for a second period of time to cause said oxidant to react with said layer of said silicide to convert a portion thereof to silicon dioxide overlying another portion of said layer of said silicide unconverted to silicon dioxide and also to react with the exposed portions of said first layer of polycrystalline silicon and to convert said portion thereof to silicon dioxide.
8. A method as claimed in Claim 7 wherein a second layer of polycrystalline silicon is patterned to provide a patterned portion of said second layer of polycrystalline silicon overlying said conductor and removing the remainder thereof including the portion of said first layer of polycrystalline silicon lying thereunder.
9. A method as claimed in Claim 7 or
Claim 8 wherein the unreacted and exposed portions of said layers of polycrystalline silicon overlying said layer of said metallic silicide and said layer insulating material are removed prior to heating said substrate including said conductor and said layer of said metal silicide in an oxidizing atmosphere for said second period of time.
10. A method of forming a composite structure as claimed in Claim 7 substantially as hereinbefore described with reference to and as illustrated in the accompanying drawings.
11. A composite structure as claimed in
Claim 1 substantially as hereinbefore described with reference to and as illustrated in the accompanying drawings.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US8798179A | 1979-10-25 | 1979-10-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB2061615A true GB2061615A (en) | 1981-05-13 |
Family
ID=22208403
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8029822A Withdrawn GB2061615A (en) | 1979-10-25 | 1980-09-16 | Composite conductors for integrated circuits |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5678140A (en) |
| DE (1) | DE3039622A1 (en) |
| FR (1) | FR2468206A1 (en) |
| GB (1) | GB2061615A (en) |
| NL (1) | NL8005637A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2494042A1 (en) * | 1980-11-07 | 1982-05-14 | Hitachi Ltd | SEMICONDUCTOR DEVICES AND METHOD FOR MANUFACTURING SAME |
| FR2524709A1 (en) * | 1982-03-31 | 1983-10-07 | Nippon Telegraph & Telephone | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| EP0113522A2 (en) * | 1982-11-30 | 1984-07-18 | Fujitsu Limited | The manufacture of semiconductor devices |
| US4886764A (en) * | 1988-02-11 | 1989-12-12 | Sgs-Thomson Microelectronics, Inc. | Process for making refractory metal silicide cap for protecting multi-layer polycide structure |
| WO2001054177A1 (en) * | 2000-01-21 | 2001-07-26 | Advanced Micro Devices, Inc. | Tungsten gate electrode method and device |
| US6274472B1 (en) | 2000-01-21 | 2001-08-14 | Advanced Micro Devices, Inc. | Tungsten interconnect method |
| US6277744B1 (en) | 2000-01-21 | 2001-08-21 | Advanced Micro Devices, Inc. | Two-level silane nucleation for blanket tungsten deposition |
| US6387788B2 (en) * | 1998-06-29 | 2002-05-14 | Hyundai Electronics Industries Co., Ltd. | Method for forming polycide gate electrode of metal oxide semiconductor field effect transistor |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4441247A (en) * | 1981-06-29 | 1984-04-10 | Intel Corporation | Method of making MOS device by forming self-aligned polysilicon and tungsten composite gate |
| GB2145243B (en) * | 1983-08-18 | 1987-08-26 | Gen Electric | Optical lithographic processes |
| GB2145539B (en) * | 1983-08-22 | 1986-08-28 | Gen Electric | Optical preparation of molybdenum surfaces |
| JPS60225474A (en) * | 1984-04-23 | 1985-11-09 | Mitsubishi Electric Corp | semiconductor equipment |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4152823A (en) * | 1975-06-10 | 1979-05-08 | Micro Power Systems | High temperature refractory metal contact assembly and multiple layer interconnect structure |
| US4128670A (en) * | 1977-11-11 | 1978-12-05 | International Business Machines Corporation | Fabrication method for integrated circuits with polysilicon lines having low sheet resistance |
-
1980
- 1980-09-16 GB GB8029822A patent/GB2061615A/en not_active Withdrawn
- 1980-10-13 NL NL8005637A patent/NL8005637A/en not_active Application Discontinuation
- 1980-10-21 DE DE19803039622 patent/DE3039622A1/en not_active Withdrawn
- 1980-10-23 FR FR8022678A patent/FR2468206A1/en not_active Withdrawn
- 1980-10-24 JP JP14827180A patent/JPS5678140A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2494042A1 (en) * | 1980-11-07 | 1982-05-14 | Hitachi Ltd | SEMICONDUCTOR DEVICES AND METHOD FOR MANUFACTURING SAME |
| FR2524709A1 (en) * | 1982-03-31 | 1983-10-07 | Nippon Telegraph & Telephone | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| EP0113522A2 (en) * | 1982-11-30 | 1984-07-18 | Fujitsu Limited | The manufacture of semiconductor devices |
| EP0113522A3 (en) * | 1982-11-30 | 1987-01-28 | Fujitsu Limited | The manufacture of semiconductor devices |
| US4886764A (en) * | 1988-02-11 | 1989-12-12 | Sgs-Thomson Microelectronics, Inc. | Process for making refractory metal silicide cap for protecting multi-layer polycide structure |
| US6387788B2 (en) * | 1998-06-29 | 2002-05-14 | Hyundai Electronics Industries Co., Ltd. | Method for forming polycide gate electrode of metal oxide semiconductor field effect transistor |
| WO2001054177A1 (en) * | 2000-01-21 | 2001-07-26 | Advanced Micro Devices, Inc. | Tungsten gate electrode method and device |
| US6274472B1 (en) | 2000-01-21 | 2001-08-14 | Advanced Micro Devices, Inc. | Tungsten interconnect method |
| US6277744B1 (en) | 2000-01-21 | 2001-08-21 | Advanced Micro Devices, Inc. | Two-level silane nucleation for blanket tungsten deposition |
| US6284636B1 (en) | 2000-01-21 | 2001-09-04 | Advanced Micro Devices, Inc. | Tungsten gate method and apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2468206A1 (en) | 1981-04-30 |
| NL8005637A (en) | 1981-04-28 |
| DE3039622A1 (en) | 1981-05-07 |
| JPS5678140A (en) | 1981-06-26 |
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Legal Events
| Date | Code | Title | Description |
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| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |
