GB2230136B - Method for manufacturing static induction type semiconductor device and semiconductor devices manufactured thereby - Google Patents

Method for manufacturing static induction type semiconductor device and semiconductor devices manufactured thereby

Info

Publication number
GB2230136B
GB2230136B GB9005988A GB9005988A GB2230136B GB 2230136 B GB2230136 B GB 2230136B GB 9005988 A GB9005988 A GB 9005988A GB 9005988 A GB9005988 A GB 9005988A GB 2230136 B GB2230136 B GB 2230136B
Authority
GB
United Kingdom
Prior art keywords
induction type
devices manufactured
static induction
semiconductor device
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9005988A
Other versions
GB9005988D0 (en
GB2230136A (en
Inventor
Masahiko Suzumura
Kazushi Kataoka
Takuya Komoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1076009A external-priority patent/JP2757962B2/en
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Publication of GB9005988D0 publication Critical patent/GB9005988D0/en
Publication of GB2230136A publication Critical patent/GB2230136A/en
Application granted granted Critical
Publication of GB2230136B publication Critical patent/GB2230136B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/012—Manufacture or treatment of static induction transistors [SIT], e.g. permeable base transistors [PBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
GB9005988A 1989-03-28 1990-03-16 Method for manufacturing static induction type semiconductor device and semiconductor devices manufactured thereby Expired - Fee Related GB2230136B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1076009A JP2757962B2 (en) 1989-01-26 1989-03-28 Manufacturing method of electrostatic induction semiconductor device

Publications (3)

Publication Number Publication Date
GB9005988D0 GB9005988D0 (en) 1990-05-09
GB2230136A GB2230136A (en) 1990-10-10
GB2230136B true GB2230136B (en) 1993-02-10

Family

ID=13592818

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9005988A Expired - Fee Related GB2230136B (en) 1989-03-28 1990-03-16 Method for manufacturing static induction type semiconductor device and semiconductor devices manufactured thereby

Country Status (3)

Country Link
DE (1) DE4009675C2 (en)
FR (1) FR2645348B1 (en)
GB (1) GB2230136B (en)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4041517A (en) * 1974-09-04 1977-08-09 Tokyo Shibaura Electric Co., Ltd. Vertical type junction field effect semiconductor device
US4326209A (en) * 1977-04-13 1982-04-20 Nippon Gakki Seizo Kabushiki Kaisha Static induction transistor
EP0064561A1 (en) * 1980-11-21 1982-11-17 Zaidan Hozin Handotai Kenkyu Shinkokai Static induction thyristor
US4403396A (en) * 1981-12-24 1983-09-13 Gte Laboratories Incorporated Semiconductor device design and process
US4566172A (en) * 1984-02-24 1986-01-28 Gte Laboratories Incorporated Method of fabricating a static induction type recessed junction field effect transistor
EP0194199A2 (en) * 1985-02-28 1986-09-10 Research Development Corporation of Japan Double gate static induction thyristor and method for manufacturing the same
EP0194946A2 (en) * 1985-03-13 1986-09-17 Research Development Corporation of Japan Pressurized contact type double gate static induction thyristor
US4713358A (en) * 1986-05-02 1987-12-15 Gte Laboratories Incorporated Method of fabricating recessed gate static induction transistors

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4060821A (en) * 1976-06-21 1977-11-29 General Electric Co. Field controlled thyristor with buried grid
JPS5492180A (en) * 1977-12-29 1979-07-21 Seiko Instr & Electronics Ltd Manufacture of semiconductor device
JPS6046551B2 (en) * 1978-08-07 1985-10-16 株式会社日立製作所 Semiconductor switching device and its manufacturing method
JPS6016753B2 (en) * 1979-01-19 1985-04-27 株式会社日立製作所 Semiconductor switching device and its control method
JPS5671979A (en) * 1979-11-19 1981-06-15 Toshiba Corp Static induction transistor and preparation method thereof
US4571815A (en) * 1981-11-23 1986-02-25 General Electric Company Method of making vertical channel field controlled device employing a recessed gate structure
JPS58131771A (en) * 1982-02-01 1983-08-05 Hitachi Ltd Electrostatic induction type semiconductor switching device
JPS60955A (en) * 1983-06-18 1985-01-07 泉株式会社 Anti-contamination processing method of protective sheet-shaped article for construction work
US4551909A (en) * 1984-03-29 1985-11-12 Gte Laboratories Incorporated Method of fabricating junction field effect transistors
EP0178387B1 (en) * 1984-10-19 1992-10-07 BBC Brown Boveri AG Gate turn-off power semiconductor device
IT1202313B (en) * 1985-09-26 1989-02-02 Sgs Microelettronica Spa SEMICONDUCTOR POWER DEVICE, NORMALLY INTERDICTED FOR HIGH VOLTAGES AND WITH MODULATED RON
JPS634680A (en) * 1986-06-24 1988-01-09 Matsushita Electric Works Ltd Electrostatic induction type semiconductor device

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4041517A (en) * 1974-09-04 1977-08-09 Tokyo Shibaura Electric Co., Ltd. Vertical type junction field effect semiconductor device
US4326209A (en) * 1977-04-13 1982-04-20 Nippon Gakki Seizo Kabushiki Kaisha Static induction transistor
EP0064561A1 (en) * 1980-11-21 1982-11-17 Zaidan Hozin Handotai Kenkyu Shinkokai Static induction thyristor
US4403396A (en) * 1981-12-24 1983-09-13 Gte Laboratories Incorporated Semiconductor device design and process
US4566172A (en) * 1984-02-24 1986-01-28 Gte Laboratories Incorporated Method of fabricating a static induction type recessed junction field effect transistor
EP0194199A2 (en) * 1985-02-28 1986-09-10 Research Development Corporation of Japan Double gate static induction thyristor and method for manufacturing the same
EP0194946A2 (en) * 1985-03-13 1986-09-17 Research Development Corporation of Japan Pressurized contact type double gate static induction thyristor
US4713358A (en) * 1986-05-02 1987-12-15 Gte Laboratories Incorporated Method of fabricating recessed gate static induction transistors

Also Published As

Publication number Publication date
FR2645348A1 (en) 1990-10-05
GB9005988D0 (en) 1990-05-09
FR2645348B1 (en) 1997-01-17
DE4009675A1 (en) 1990-10-04
DE4009675C2 (en) 1995-04-06
GB2230136A (en) 1990-10-10

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Legal Events

Date Code Title Description
746 Register noted 'licences of right' (sect. 46/1977)

Effective date: 19990428

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20030316