Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB24051/54A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
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Filing date
Publication date
Application filed by General Electric CofiledCriticalGeneral Electric Co
Publication of GB768104ApublicationCriticalpatent/GB768104A/en
C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
C30B15/20—Controlling or regulating
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Chemical & Material Sciences
(AREA)
Engineering & Computer Science
(AREA)
Crystallography & Structural Chemistry
(AREA)
Materials Engineering
(AREA)
Metallurgy
(AREA)
Organic Chemistry
(AREA)
Die Bonding
(AREA)
Abstract
Semiconductor crystals are formed from a melt consisting of Si, Al and Sb in the proportions 2 to 3 parts Al to 1 part of Sb and a total Al-Sb content of 0.1-10 parts to 10 parts of Si.
GB24051/54A1953-09-301954-08-18Improvements in and relating to semi-conductor p-n junction units
ExpiredGB768104A
(en)
