GB830027A - Selenium rectifier - Google Patents

Selenium rectifier

Info

Publication number
GB830027A
GB830027A GB22926/58A GB2292658A GB830027A GB 830027 A GB830027 A GB 830027A GB 22926/58 A GB22926/58 A GB 22926/58A GB 2292658 A GB2292658 A GB 2292658A GB 830027 A GB830027 A GB 830027A
Authority
GB
United Kingdom
Prior art keywords
selenium
microns
layer
temperature
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB22926/58A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Publication of GB830027A publication Critical patent/GB830027A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/046—Provision of discrete insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thermistors And Varistors (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

830,027. Selenium rectifiers. STANDARD TELEPHONES & CABLES Ltd. July 17, 1958 [Jan. 27, 1958], No. 22926/58. Drawings to Specification. Class 37. A method of making a selenium cell with a low forward resistance comprises applying a layer of crystalline selenium on to a base-plate, applying a second relatively thin layer of selenium in amorphous form on to the first layer, then applying a counter-electrode on to the second layer and heat-treating the cell at a temperature and for a time sufficient to convert the amorphous selenium to the crystalline form and produce the appropriate reaction between the selenium and the counter-electrode. Preferably the cell comprises a base-plate of nickelplated aluminium on which grey selenium is vaporized at a temperature of 140‹ C. to a depth of 50 to 100 microns, preferably 60 microns, amorphous or black selenium is then vaporized on to the grey selenium to a thickness of 1 to 10 microns, preferably 2 microns, at a temperature of 30-110‹ C. A barrier layer, e.g. of nylon, 0.01 microns thick, may then be applied if desired, otherwise the counterelectrode is sprayed on, comprising e.g. an eutectic alloy of 67% tin and 33% cadmium, the assembly is then fired at a temperature of 215‹ C. for about 15 minutes before electrically forming the rectifier.
GB22926/58A 1958-01-27 1958-07-17 Selenium rectifier Expired GB830027A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US71133258A 1958-01-27 1958-01-27

Publications (1)

Publication Number Publication Date
GB830027A true GB830027A (en) 1960-03-09

Family

ID=24857665

Family Applications (1)

Application Number Title Priority Date Filing Date
GB22926/58A Expired GB830027A (en) 1958-01-27 1958-07-17 Selenium rectifier

Country Status (2)

Country Link
DE (1) DE1135105B (en)
GB (1) GB830027A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1052006A (en) * 1964-06-12

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT155590B (en) * 1936-06-22 1939-02-25 Aeg Dry plate rectifier.
DE961733C (en) * 1939-01-17 1957-04-11 Aeg Process for producing electrically asymmetrically conductive elements with a semiconductor such as selenium
DE908043C (en) * 1943-02-03 1954-04-01 Siemens Ag Process for the production of selenium rectifiers, preferably those with light metal carrier electrodes
FR961847A (en) * 1946-12-26 1950-05-23
DE971615C (en) * 1948-10-01 1959-02-26 Siemens Ag Process for the manufacture of dry selenium rectifiers
BE515174A (en) * 1951-10-29

Also Published As

Publication number Publication date
DE1135105B (en) 1962-08-23

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