GB853029A - Improvements in and relating to semi-conductor devices - Google Patents
Improvements in and relating to semi-conductor devicesInfo
- Publication number
- GB853029A GB853029A GB7783/57A GB778357A GB853029A GB 853029 A GB853029 A GB 853029A GB 7783/57 A GB7783/57 A GB 7783/57A GB 778357 A GB778357 A GB 778357A GB 853029 A GB853029 A GB 853029A
- Authority
- GB
- United Kingdom
- Prior art keywords
- impurity
- excess
- acceptor
- donor
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000000370 acceptor Substances 0.000 abstract 7
- 239000012535 impurity Substances 0.000 abstract 7
- 238000009792 diffusion process Methods 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052732 germanium Inorganic materials 0.000 abstract 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- 229910052785 arsenic Inorganic materials 0.000 abstract 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052733 gallium Inorganic materials 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 229910052738 indium Inorganic materials 0.000 abstract 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- VMXJCRHCUWKQCB-UHFFFAOYSA-N NPNP Chemical compound NPNP VMXJCRHCUWKQCB-UHFFFAOYSA-N 0.000 abstract 1
- 239000012190 activator Substances 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
Abstract
853,029. Semi-conductor devices. BRITISH THOMSON - HOUSTON CO., Ltd. March 3, 1958 [March 8, 1957], No. 7783/57. Drawings to Specification. Class 37 A method of forming PN junctions in. semiconductor bodies comprises heating a body containing a donor (acceptor) impurity and a larger quantity of an acceptor (donor) impurity having a higher diffusion coefficient that the donor (acceptor impurity) to diffuse the impurities differentially towards the surface of the body and to evaporate them therefrom until a PN junction is formed beneath the surface. The heating is carried . out preferably in an inert atmosphere or vacuum at a temperature below the melting point of the semi-conductor, for example below 1400 C for silicon, and below 900 C for germanium. Where germanium is used the body initially contains one of the acceptors gallium, indium, and boron and an excess of one of the faster diffusing donors arsenic, antiinony and phosphorus. In silicon, in which the acceptors diffuse faster than the donors, the body initially contains an excess of acceptor impurity. A two junction body suitable for use in transistors may be formed by grinding or etching the converted region from the edge of a wafer treated in the above described manner. A PNP or NPN junction may be formed by combining the above process with the simultaneous inward diffusion of an activator impurity characteristic of the same conductivity type as the excess impurity and having a diffusion coefficient intermediate the coefficients of the donor and acceptor initially present in the body. For instance indium may be diffused into silicon doped with excess aluminium and antimony, or phosphorus diffused into germanium containing gallium and excess arsenic. A further junction may then be provided to form a PNPN or NPNP body by a convertional alloying and diffusion process. Specification 728,129 is referred to.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB7783/57A GB853029A (en) | 1957-03-08 | 1957-03-08 | Improvements in and relating to semi-conductor devices |
| FR1199588D FR1199588A (en) | 1957-03-08 | 1958-03-07 | Process for preparing rho-nu junction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB7783/57A GB853029A (en) | 1957-03-08 | 1957-03-08 | Improvements in and relating to semi-conductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB853029A true GB853029A (en) | 1960-11-02 |
Family
ID=9839631
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB7783/57A Expired GB853029A (en) | 1957-03-08 | 1957-03-08 | Improvements in and relating to semi-conductor devices |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR1199588A (en) |
| GB (1) | GB853029A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1246890B (en) * | 1960-09-20 | 1967-08-10 | Western Electric Co | Diffusion process for manufacturing a semiconductor component |
| DE1614803B1 (en) * | 1966-04-29 | 1971-06-09 | Texas Instruments Inc | METHOD OF MANUFACTURING A SEMICONDUCTOR ARRANGEMENT |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1248102A (en) * | 1959-10-30 | 1960-12-09 | Materiel Telephonique | Preparation of semiconductors |
| US3208887A (en) * | 1961-06-23 | 1965-09-28 | Ibm | Fast switching diodes |
-
1957
- 1957-03-08 GB GB7783/57A patent/GB853029A/en not_active Expired
-
1958
- 1958-03-07 FR FR1199588D patent/FR1199588A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1246890B (en) * | 1960-09-20 | 1967-08-10 | Western Electric Co | Diffusion process for manufacturing a semiconductor component |
| DE1614803B1 (en) * | 1966-04-29 | 1971-06-09 | Texas Instruments Inc | METHOD OF MANUFACTURING A SEMICONDUCTOR ARRANGEMENT |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1199588A (en) | 1959-12-15 |
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