GB903259A - A method of applying a contact to a semiconductor device - Google Patents

A method of applying a contact to a semiconductor device

Info

Publication number
GB903259A
GB903259A GB39904/58A GB3990458A GB903259A GB 903259 A GB903259 A GB 903259A GB 39904/58 A GB39904/58 A GB 39904/58A GB 3990458 A GB3990458 A GB 3990458A GB 903259 A GB903259 A GB 903259A
Authority
GB
United Kingdom
Prior art keywords
layer
semi
conductor
aluminium
gold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB39904/58A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of GB903259A publication Critical patent/GB903259A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A method of making an ohmic contact to the semi-conductor material of an asymmetrically-conducting semi-conductor device comprises applying a first layer of metal or semi-conductor to form a barrier free contact, and on top of this a layer of a second metal to which a lead-in wire is subsequently soldered. The melting-points of the semi-conductor and metals are selected so that during the soldering operation no alloying occurs between the first and second layers, or between the first layer and the underlying semi-conductor. In one embodiment a layer of aluminium is deposited on an N-type silicon body by evaporation, following by a layer of gold. A lead-in wire is then soldered to the gold with a lead-tin solder. The soldering operation is carried out at below 300 DEG C. which is well below the aluminium - gold and aluminium - silicon eutectic temperature.
GB39904/58A 1957-12-12 1958-12-10 A method of applying a contact to a semiconductor device Expired GB903259A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEL0029274 1957-12-12

Publications (1)

Publication Number Publication Date
GB903259A true GB903259A (en) 1962-08-15

Family

ID=7264822

Family Applications (1)

Application Number Title Priority Date Filing Date
GB39904/58A Expired GB903259A (en) 1957-12-12 1958-12-10 A method of applying a contact to a semiconductor device

Country Status (3)

Country Link
DE (1) DE1074160B (en)
GB (1) GB903259A (en)
NL (2) NL113196C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3403308A (en) * 1966-10-03 1968-09-24 Bell Telephone Labor Inc Aluminum-gold contact to silicon and germanium

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3200490A (en) * 1962-12-07 1965-08-17 Philco Corp Method of forming ohmic bonds to a germanium-coated silicon body with eutectic alloyforming materials

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3403308A (en) * 1966-10-03 1968-09-24 Bell Telephone Labor Inc Aluminum-gold contact to silicon and germanium

Also Published As

Publication number Publication date
NL113196C (en)
DE1074160B (en) 1960-01-28
NL234049A (en)

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