IT1050018B - Cella di memoria perfezionata - Google Patents

Cella di memoria perfezionata

Info

Publication number
IT1050018B
IT1050018B IT390/75A IT3907575A IT1050018B IT 1050018 B IT1050018 B IT 1050018B IT 390/75 A IT390/75 A IT 390/75A IT 3907575 A IT3907575 A IT 3907575A IT 1050018 B IT1050018 B IT 1050018B
Authority
IT
Italy
Prior art keywords
perfected
memory cell
cell
memory
perfected memory
Prior art date
Application number
IT390/75A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT1050018B publication Critical patent/IT1050018B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/10—DRAM devices comprising bipolar components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Static Random-Access Memory (AREA)
IT390/75A 1974-12-23 1975-12-09 Cella di memoria perfezionata IT1050018B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US535538A US3914749A (en) 1974-12-23 1974-12-23 D.C. stable single device memory cell

Publications (1)

Publication Number Publication Date
IT1050018B true IT1050018B (it) 1981-03-10

Family

ID=24134673

Family Applications (1)

Application Number Title Priority Date Filing Date
IT390/75A IT1050018B (it) 1974-12-23 1975-12-09 Cella di memoria perfezionata

Country Status (8)

Country Link
US (1) US3914749A (it)
JP (1) JPS5339752B2 (it)
AR (1) AR210591A1 (it)
BR (1) BR7508615A (it)
DE (1) DE2555002C2 (it)
FR (1) FR2296245A1 (it)
GB (1) GB1530317A (it)
IT (1) IT1050018B (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL9402176A (nl) * 1977-02-02 1995-06-01 Zaidan Hojin Handotai Kenkyu Halfgeleiderinrichting.
NL9500518A (nl) * 1977-02-21 1995-06-01 Zaidan Hojin Handotai Kenkyu Halfgeleidergeheugenschakeling.
US4323986A (en) * 1980-06-30 1982-04-06 International Business Machines Corporation Electronic storage array having DC stable conductivity modulated storage cells
US4431305A (en) * 1981-07-30 1984-02-14 International Business Machines Corporation High density DC stable memory cell
JPS6265382A (ja) * 1985-09-17 1987-03-24 Agency Of Ind Science & Technol サ−ジ吸収素子
GB9013926D0 (en) * 1990-06-22 1990-08-15 Gen Electric Co Plc A vertical pnp transistor
JP4209433B2 (ja) * 2006-06-12 2009-01-14 Ｎｅｃエレクトロニクス株式会社 静電破壊保護装置
US20130174896A1 (en) * 2011-06-30 2013-07-11 California Institute Of Technology Tandem solar cell using a silicon microwire array and amorphous silicon photovoltaic layer

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3293087A (en) * 1963-03-05 1966-12-20 Fairchild Camera Instr Co Method of making isolated epitaxial field-effect device
US3717515A (en) * 1969-11-10 1973-02-20 Ibm Process for fabricating a pedestal transistor
US3865648A (en) * 1972-01-07 1975-02-11 Ibm Method of making a common emitter transistor integrated circuit structure

Also Published As

Publication number Publication date
AR210591A1 (es) 1977-08-31
DE2555002A1 (de) 1976-07-01
JPS5339752B2 (it) 1978-10-23
JPS5178693A (it) 1976-07-08
DE2555002C2 (de) 1984-09-06
BR7508615A (pt) 1976-08-24
FR2296245A1 (fr) 1976-07-23
GB1530317A (en) 1978-10-25
US3914749A (en) 1975-10-21
FR2296245B1 (it) 1979-06-15

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