JP2569640B2 - Focusing correction method for projection exposure - Google Patents

Focusing correction method for projection exposure

Info

Publication number
JP2569640B2
JP2569640B2 JP62307916A JP30791687A JP2569640B2 JP 2569640 B2 JP2569640 B2 JP 2569640B2 JP 62307916 A JP62307916 A JP 62307916A JP 30791687 A JP30791687 A JP 30791687A JP 2569640 B2 JP2569640 B2 JP 2569640B2
Authority
JP
Japan
Prior art keywords
substrate
light
exposed
focusing
substrate stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62307916A
Other languages
Japanese (ja)
Other versions
JPH01149424A (en
Inventor
栄一 河村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
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Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62307916A priority Critical patent/JP2569640B2/en
Publication of JPH01149424A publication Critical patent/JPH01149424A/en
Application granted granted Critical
Publication of JP2569640B2 publication Critical patent/JP2569640B2/en
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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026Focusing
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automatic Focus Adjustment (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

【発明の詳細な説明】 〔概 要〕 ホトマスクのパターンを被露光基板に投影する投影光
学系と、被露光基板をその露光面に平行なるXY方向およ
び垂直なるZ方向に移動させる基板ステージと、被露光
基板の露光面に光束を入射させてその反射光を検知し、
且つその検知手段に具える調整機構が基板ステージのZ
方向動と連動する焦点合わせ光学系とを具えて、基板ス
テージのZ方向動を変化させて露光した被露光基板から
焦点合わせが最適となる基板ステージの状態を求めて、
その状態における上記調整機構の調整点を第1の基準と
なし、露光作業中は該調整機構の調整点を第1の基準に
合わせることにより焦点合わせを行う投影露光装置にお
ける投影露光の焦点合わせ補正方法に関し、 第1の基準を設定した後の環境条件の経時変化に伴っ
て発生する焦点合わせ機構の合わせずれを補正すること
を目的とし、 微小透光窓を有する焦点検知板を被露光基板の露光面
に平行させて基板ステージに設けると共に、微小透光領
域を有する遮光パターンをホトマスクに設け、上記第1
の基準の設定と相前後して、基板ステージによる焦点検
知板の移動およびホトマスクのパターン面に平行なホト
マスクの移動により、投影光学系による微小透光領域か
らの光束が微小透光窓を通過してその強度が最大にな
り、且つ焦点合わせ光学系の入射光束が微小透光窓の近
傍を照射する状態にする焦点検知板の位置合わせを行
い、その状態における上記調整機構の調整点を第2の基
準となし、露光作業中は、適時に上記の焦点検知板の位
置合わせを行って、その状態における上記調整機構の調
整点の第2の基準とのずれ量を求め、そのずれ量でもっ
て第1の基準を補正するように構成する。
DETAILED DESCRIPTION OF THE INVENTION [Overview] A projection optical system for projecting a pattern of a photomask onto a substrate to be exposed, a substrate stage for moving the substrate to be exposed in an XY direction parallel to the exposure surface and a Z direction perpendicular to the exposure surface, A luminous flux is incident on the exposure surface of the substrate to be exposed, and the reflected light is detected,
And the adjusting mechanism provided in the detecting means is the Z of the substrate stage.
With a focusing optical system interlocked with the directional movement, the Z-direction movement of the substrate stage is changed to determine the state of the substrate stage where the focusing is optimal from the exposed substrate exposed.
In this state, the adjustment point of the adjustment mechanism is set as a first reference, and during the exposure operation, the adjustment point of the adjustment mechanism is adjusted to the first reference to adjust the focus of the projection exposure in the projection exposure apparatus. A method for correcting a focusing error of a focusing mechanism caused by a change over time in environmental conditions after the first standard is set, and using a focus detection plate having a small light-transmitting window for a substrate to be exposed. A light-shielding pattern having a minute light-transmitting region is provided on a photomask, and the light-shielding pattern is provided on the substrate stage in parallel with the exposure surface.
Around the time when the reference is set, the light beam from the small light transmission area by the projection optical system passes through the small light transmission window due to the movement of the focus detection plate by the substrate stage and the movement of the photomask parallel to the pattern surface of the photomask. Position of the focus detection plate so that the intensity becomes maximum and the incident light beam of the focusing optical system irradiates the vicinity of the minute light transmitting window, and the adjustment point of the adjustment mechanism in that state is set to the second position. During the exposure operation, the position of the focus detection plate is timely adjusted, and the amount of deviation of the adjustment point of the adjustment mechanism from the second reference in that state is determined. It is configured to correct the first reference.

〔産業上の利用分野〕[Industrial applications]

本発明は、被露光基板の露光面に光束を入射させてそ
の反射光を検知し、且つその検知手段に具える調整機構
が基板ステージのZ方向動と連動する焦点合わせ光学
系、を具えた投影露光装置における投影露光の焦点合わ
せ補正方法に関す。
The present invention includes a focusing optical system that causes a light beam to be incident on an exposure surface of a substrate to be exposed, detects reflected light thereof, and an adjustment mechanism provided in the detection unit is interlocked with Z-direction movement of a substrate stage. The present invention relates to a method for correcting the focus of projection exposure in a projection exposure apparatus.

上記投影露光装置は、例えば半導体装置の製造におけ
るホトリソグラフィ技術の露光に用いられており、焦点
合わせを正確に行うことが肝要である。
The projection exposure apparatus is used, for example, for exposure by photolithography technology in the manufacture of semiconductor devices, and it is important to accurately perform focusing.

〔従来の技術〕[Conventional technology]

第2図は上述の焦点合わせ光学系を具える投影露光装
置の概略側面図である。
FIG. 2 is a schematic side view of a projection exposure apparatus having the above-described focusing optical system.

第2図において、1はウェーハなどの被露光基板、3
はホトマスク(或いはレチクル)、10は投影光学系、20
は基板ステージ、30は焦点合わせ光学系、である。
In FIG. 2, reference numeral 1 denotes a substrate to be exposed such as a wafer;
Is a photomask (or reticle), 10 is a projection optical system, 20
Is a substrate stage, and 30 is a focusing optical system.

投影光学系10は、光源11からの光束12がホトマスク3
を照射し、ホトマスク3に設けられているマスクパター
ン4を通過した光束13をレンズ系14により集束させて、
マスクパターン4の像を焦点面15に結像させる。従っ
て、基板1の露光面2を焦点面15に合致させることによ
り、マスクパターン4を露光面2に鮮明に投影露光する
ことができる。
The projection optical system 10 is configured such that the light flux 12 from the light source 11 is
And the light flux 13 having passed through the mask pattern 4 provided on the photomask 3 is focused by the lens system 14,
An image of the mask pattern 4 is formed on the focal plane 15. Therefore, by aligning the exposure surface 2 of the substrate 1 with the focal plane 15, the mask pattern 4 can be clearly projected and exposed on the exposure surface 2.

基板ステージ20は、基板1の露光面2の焦点面15に平
行させて基板1を保持する基板チャック22がXYテーブル
21上に配設されてなり、XYテーブル21が露光面2に平行
なるXY方向に、また基板チャック22が露光面2に垂直な
るZ方向に基板1を移動することができて、Z方向動の
適宜な状態で露光面2を焦点面15に合致させる。
The substrate stage 20 includes a substrate chuck 22 for holding the substrate 1 in parallel with the focal plane 15 of the exposure surface 2 of the substrate 1 and an XY table.
The XY table 21 can move the substrate 1 in the XY direction parallel to the exposure surface 2, and the substrate chuck 22 can move the substrate 1 in the Z direction perpendicular to the exposure surface 2. The exposure plane 2 is made to coincide with the focal plane 15 in an appropriate state.

焦点合わせ光学系30は、光源31からの入射光束32が露
光面2を照射してその反射光33を検知し、且つその検知
手段34に具える調整機構35が基板ステージ20のZ方向動
と連動している。そして、調整機構35の調整点を変える
ことにより露光面15のZ方向の位置を調整点の変化に対
応した位置に設定することができることから、次に述べ
るようにして、露光面2を焦点面15に合わせる焦点合わ
せに用いる。なお、入射光束32は、露光面2の感光剤を
感光させないような長波長にして、焦点合わせの際に基
板1を露光しないようにしてある。
The focusing optical system 30 detects that the incident light beam 32 from the light source 31 irradiates the exposure surface 2 and detects the reflected light 33, and the adjusting mechanism 35 provided in the detecting means 34 moves the substrate stage 20 in the Z direction. Linked. By changing the adjustment point of the adjustment mechanism 35, the position of the exposure surface 15 in the Z direction can be set to a position corresponding to the change of the adjustment point. Used for focusing to 15. The incident light beam 32 has such a long wavelength that the photosensitive agent on the exposure surface 2 is not exposed to light, so that the substrate 1 is not exposed during focusing.

即ち、基板ステージ20のZ方向動をステップ変化させ
て基板1を露光すると共に、各ステップ毎に調整機構35
の調整点を確認する。次いで、現像した基板1から露光
像が最も鮮明となり焦点合わせが最適となるステップを
求め、そのステップにおける上記調整点を焦点合わせの
基準Aとする。以上のことを露光作業に先立って行い、
露光作業中は、調整機構35の調整点を基準Aに合わせる
ことによって焦点合わせを行うことができる。
That is, while exposing the substrate 1 by changing the Z-direction movement of the substrate stage 20 in steps, the adjusting mechanism 35 is provided for each step.
Check the adjustment point of. Next, a step for obtaining the sharpest exposure image and optimal focusing from the developed substrate 1 is determined, and the adjustment point in the step is set as a reference A for focusing. Do the above before the exposure work,
During the exposure operation, focusing can be performed by adjusting the adjustment point of the adjustment mechanism 35 to the reference A.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

しかしながら、投影露光装置は、その環境条件である
温度、気圧、湿度などの経時的な変化により投影光学系
10における光束13の光路の屈折率に変化が生じて、焦点
面15の位置が経時的にZ方向に移動する。
However, the projection exposure apparatus uses a projection optical system due to temporal changes in environmental conditions such as temperature, pressure, and humidity.
A change occurs in the refractive index of the optical path of the light beam 13 at 10, and the position of the focal plane 15 moves in the Z direction over time.

この移動に対して焦点合わせ光学系30による焦点合わ
せが追随すれば良いが、焦点合わせ光学系30の光路が投
影光学系10の光路と異なることから所望の追随がなされ
ない。
It is only necessary that the focusing by the focusing optical system 30 follow this movement, but desired tracking cannot be performed because the optical path of the focusing optical system 30 is different from the optical path of the projection optical system 10.

このことから、基準Aを設定した後に環境条件の変化
を生ずると、上述の焦点合わせにより位置決めした露光
面2は焦点面15との間にずれが生じて、焦点合わせが正
確に行われなくなる問題がある。
For this reason, if the environmental condition changes after the reference A is set, the exposure surface 2 positioned by the above-mentioned focusing is shifted from the focusing surface 15 and the focusing is not accurately performed. There is.

この問題を解決する方策として、基準Aの設定を高頻
度に行うことが考えられるが、基準Aの設定には上述か
ら判るように多大の時間を要して投影露光装置の稼働率
を低下させるため、この方策は実用的でない。
As a measure to solve this problem, it is conceivable to set the reference A frequently. However, setting the reference A takes a lot of time as described above to reduce the operation rate of the projection exposure apparatus. Therefore, this measure is not practical.

〔問題点を解決するための手段〕[Means for solving the problem]

上記問題点は、ホトマスクのパターンを被露光基板に
投影する投影光学系と、被露光基板をその露光面に平行
なるXY方向および垂直なるZ方向に移動させる基板ステ
ージと、被露光基板の露光面に光束を入射させてその反
射光を検知し、且つその検知手段に具える調整機構が基
板ステージのZ方向動と連動する焦点合わせ光学系とを
具えて、基板ステージのZ方向動を変化させて露光した
被露光基板から焦点合わせが最適となる基板ステージの
状態を求めて、その状態における上記調整機構の調整点
を第1の基準となし、露光作業中は該調整機構の調整点
を第1の基準に合わせることにより焦点合わせを行う投
影露光装置において、 微小透光窓を有する焦点検知板を被露光基板の露光面
に平行させて基板ステージに設けると共に、微小透光領
域を有する遮光パターンをホトマスクに設け、 上記第1の基準の設定と相前後して、基板ステージに
よる焦点検知板の移動およびホトマスクのパターン面に
平行なホトマスクの移動により、投影光学系による微小
透光領域からの光束が微小透光窓を通過してその強度が
最大になり、且つ焦点合わせ光学系の入射光束が微小透
光窓の近傍を照射する状態にする焦点検知板の位置合わ
せを行い、その状態における上記調整機構の調整点を第
2の基準となし、 露光作業中は、適時に上記の焦点検知板の位置合わせ
を行って、その状態における上記調整機構の調整点の第
2の基準とのずれ量を求め、そのずれ量でもって第1の
基準を補正する本発明の焦点合わせ補正方法によって解
決される。
The above problems are caused by a projection optical system for projecting the pattern of the photomask onto the substrate to be exposed, a substrate stage for moving the substrate to be exposed in the XY direction parallel to the exposure surface and the Z direction perpendicular to the exposure surface, and the exposure surface of the exposure substrate. And an adjusting mechanism provided in the detecting means is provided with a focusing optical system interlocked with the Z-direction movement of the substrate stage to change the Z-direction movement of the substrate stage. The state of the substrate stage at which the focusing is optimal is determined from the exposed substrate, and the adjustment point of the adjustment mechanism in that state is set as a first reference. During the exposure operation, the adjustment point of the adjustment mechanism is determined as the first point. In a projection exposure apparatus that performs focusing by adjusting to a reference 1, a focus detection plate having a fine light transmitting window is provided on a substrate stage in parallel with an exposure surface of a substrate to be exposed, and a fine light transmitting area is provided. A light-shielding pattern having the following pattern is provided on the photomask. Around the setting of the first reference, the movement of the focus detection plate by the substrate stage and the movement of the photomask parallel to the pattern surface of the photomask cause minute light transmission by the projection optical system. The position of the focus detection plate is adjusted so that the light flux from the region passes through the small light-transmitting window and its intensity is maximized, and the incident light beam of the focusing optical system irradiates the vicinity of the small light-transmitting window, In this state, the adjustment point of the adjustment mechanism is set as a second reference. During the exposure operation, the position of the focus detection plate is timely adjusted, and the second reference of the adjustment point of the adjustment mechanism in the state is set. Is solved by the focusing correction method of the present invention in which a shift amount is obtained from the first reference and the first reference is corrected based on the shift amount.

〔作用〕[Action]

上記第1の基準は先に述べた基準Aである。 The first criterion is the criterion A described above.

また、上記焦点検知板の位置合わせを行えば、焦点検
知板が投影露光系の焦点面に合致するので、上記第2の
基準は、焦点検知板を被露光基板の露光面に見立てた際
の焦点合わせを最適にさせる調整機構の調整点となり、
且つ第1の基準を設定した時点のものとなる。
In addition, if the position of the focus detection plate is adjusted, the focus detection plate matches the focal plane of the projection exposure system. Therefore, the second criterion is that when the focus detection plate is regarded as the exposure surface of the substrate to be exposed. It is an adjustment point of the adjustment mechanism that optimizes focusing,
At the time when the first reference is set.

そして上記のずれ量は、第1の基準を設定した後に生
ずる環境条件の変化に即した第2の基準のずれ量となる
ことから、このずれ量でもって第1の基準を補正すれ
ば、第1の基準を設定し直したのと同等になる。
Since the above-mentioned shift amount is a shift amount of the second reference in accordance with a change in environmental conditions that occurs after the first reference is set, if the first reference is corrected with this shift amount, the second shift This is equivalent to resetting the standard of 1.

然も、上記ずれ量の求めは、焦点検知板の位置合わせ
により極めて短時間で行うことができることから、高頻
度に行っても投影露光装置の稼働率を殆ど低下させるこ
とがない。
Needless to say, since the above-mentioned deviation amount can be obtained in a very short time by adjusting the position of the focus detection plate, the operation rate of the projection exposure apparatus hardly decreases even if it is performed frequently.

かくして、焦点合わせ光学系による焦点合わせは、上
記変化に追随し得て正確なものとなる。
Thus, the focusing by the focusing optics can follow the changes and is accurate.

〔実施例〕〔Example〕

以下本発明による焦点合わせ補正の実施例について第
1図の側面図を用いて説明する。全図を通じ同一符号は
同一対象物を示す。
Hereinafter, an embodiment of focus adjustment according to the present invention will be described with reference to the side view of FIG. The same reference numerals indicate the same objects throughout the drawings.

第1図において、先ず、大きさが例えば1μm程度の
微小透光窓41を有する焦点検知板42を基板1の露光面2
に平行させて基板チャック22の傍らに取り付け、更に、
投影露光系10側から微小透光窓41を通過した光束の強度
を検知できるように、例えばホトマルチプライヤなどか
らなる光検知器43を配設する。実施例では光検知器43の
配設の都合上から微小透光窓41との間に反射鏡44を配置
してある。焦点検知板42は、基板ステージ20のZ方向動
と共にZ方向に移動し、Z方向において露光面2に対し
常に一定の距離を保つ。
In FIG. 1, first, a focus detection plate 42 having a small light transmitting window 41 having a size of, for example, about 1 μm is connected to the exposure surface 2 of the substrate 1.
To the side of the substrate chuck 22 in parallel with
A photodetector 43 composed of, for example, a photomultiplier is provided so that the intensity of a light beam that has passed through the minute light transmitting window 41 from the projection exposure system 10 side can be detected. In the embodiment, a reflecting mirror 44 is arranged between the light detecting window 43 and the minute light transmitting window 41 for convenience of arrangement of the light detector 43. The focus detection plate 42 moves in the Z direction with the movement of the substrate stage 20 in the Z direction, and always keeps a constant distance from the exposure surface 2 in the Z direction.

微小透光窓41は、透明基板に遮光膜を被着したものま
たは遮光性の薄板を焦点検知板42の本体にし、その遮光
膜または薄板に微小開口を形成してなるものである。
The minute light-transmitting window 41 is formed by forming a light-shielding film on a transparent substrate or a light-shielding thin plate as a main body of the focus detection plate 42, and forming a minute opening in the light-shielding film or the thin plate.

また、ホトマスク3には、大きさが例えば1μm程度
の微小透光領域5を有する遮光パターン6をマスクパタ
ーン4の傍らに設ける。
The photomask 3 is provided with a light-shielding pattern 6 having a small light-transmitting region 5 having a size of about 1 μm, for example, beside the mask pattern 4.

さすれば、基板ステージ20のXYZ方向動により、焦点
検知板42のZ方向位置が投影光学系10の焦点面15の近傍
になり、且つ焦点合わせ光学系30の入射光束32が微小透
光窓41の近傍を照射するように焦点検知板42を位置さ
せ、更に、ホトマスク3のマスクパターン4面に平行な
移動により、投影光学系10による微小透光領域5からの
光束13aの中心が微小透光窓41の中心を通るようにホト
マスク3を位置させて上で、基板ステージ20のZ方向動
により、微小透光窓41を通過する光束13aの強度が最大
になるように焦点検知板42を位置させることができる。
この状態では、焦点検知板42が焦点面15に合致してい
る。ここで、上記の状態にすることを「焦点検知板42の
位置合わせ」と称することにする。
Then, the movement of the substrate stage 20 in the XYZ directions causes the position of the focus detection plate 42 in the Z direction to be in the vicinity of the focal plane 15 of the projection optical system 10, and the incident light beam 32 of the focusing optical system 30 causes the minute light transmitting window to move. The focus detection plate 42 is positioned so as to irradiate the vicinity of 41, and the center of the light flux 13a from the small light transmitting region 5 by the projection optical system 10 is moved by the movement parallel to the mask pattern 4 surface of the photomask 3. With the photomask 3 positioned so as to pass through the center of the light window 41, the focus detection plate 42 is moved so that the intensity of the light beam 13a passing through the minute light transmitting window 41 is maximized by the Z-direction movement of the substrate stage 20. Can be located.
In this state, the focus detection plate 42 matches the focal plane 15. Here, the above state is referred to as “positioning of the focus detection plate 42”.

そして、焦点合わせ光学系30では、焦点検知板42の位
置合わせがなされた時点における調整機構35の調整点を
確認することができる。
Then, in the focusing optical system 30, the adjustment point of the adjustment mechanism 35 at the time when the position of the focus detection plate 42 is adjusted can be confirmed.

以上の状況の下で、先に述べた基準A(第1の基準)
を設定した後の環境条件の経時変化に対する焦点合わせ
の補正は、以下のようにして行う。
Under the above circumstances, the standard A mentioned above (first standard)
The correction of the focusing with respect to the time-dependent change of the environmental condition after setting is performed as follows.

即ち、調整機構35の調整点の基準Aを設定する際に、
それと相前後して焦点検知板42の位置合わせを行い、そ
の状態における調整機構35の調整点を基準B(第2の基
準)とする。
That is, when the reference A of the adjustment point of the adjustment mechanism 35 is set,
At about the same time, the position of the focus detection plate 42 is adjusted, and the adjustment point of the adjustment mechanism 35 in that state is set as a reference B (second reference).

そして露光作業中は、適時に焦点検知板42の位置合わ
せを行って、その状態における調整機構35の調整点の基
準Bとのずれ量αを求め、焦点合わせのため調整機構35
の調整点を基準Aに合わせる際に、その合わせ点を基準
Aからずれ量αだけずらせる。このずれ量αは、基準A
を設定した後の環境条件の変化による焦点面15のZ方向
移動量に対応することから、上記のようにした焦点合わ
せは、環境条件の変化分を補正して露光面2を焦点面15
に合致させる。
During the exposure operation, the position of the focus detection plate 42 is adjusted in a timely manner, the deviation amount α of the adjustment point of the adjustment mechanism 35 from the reference B in that state is obtained, and the adjustment mechanism 35 is used for focusing.
When the adjustment point is adjusted to the reference A, the adjustment point is shifted from the reference A by the shift amount α. This deviation α is based on the reference A
Corresponds to the amount of movement of the focal plane 15 in the Z direction due to a change in the environmental condition after the setting of the focus condition. Thus, the focusing as described above corrects the change in the environmental condition and shifts the exposure surface 2 to the focal plane 15.
To match.

然も、ずれ量αの求めは、焦点検知板42の位置合わせ
によって極めて短時間に行うことができることから、高
頻度に行っても投影露光装置の稼働率を殆ど低下させる
ことがない。
Needless to say, since the deviation amount α can be obtained in a very short time by adjusting the position of the focus detection plate 42, the operation rate of the projection exposure apparatus hardly decreases even if it is performed frequently.

なお、上述の実施例では、微小透光窓41を透過した光
束を反射鏡44により光検知器43に導いているが、可能な
らば反射鏡44を除去して光検知器43を微小透光窓41の直
下に配設しても良く、また反射鏡44に代わって光ファイ
バを用いることにより光検知器43の配設位置を任意にす
ることもできる。
In the above-described embodiment, the light beam transmitted through the minute light transmitting window 41 is guided to the light detector 43 by the reflecting mirror 44. However, if possible, the reflecting mirror 44 is removed and the light The photodetector 43 may be disposed at any position by using an optical fiber instead of the reflecting mirror 44.

〔発明の効果〕〔The invention's effect〕

以上説明したように本発明の構成によれば、ホトマス
クのパターンを被露光基板に投影する投影光学系と、被
露光基板をその露光面に平行なるXY方向および垂直なる
Z方向に移動させる基板ステージと、被露光基板の露光
面に光束を入射させてその反射光を検知し、且つその検
知手段に具える調整機構が基板ステージのZ方向と連動
する焦点合わせ光学系とを具えて、基板ステージのZ方
向動を変化させて露光した被露光基板から焦点合わせが
最適となる基板ステージの状態を求めて、その状態にお
ける上記調整機構の調整点を第1の基準となし、露光作
業中は該調整機構の調整点を第1の基準に合わせること
により焦点合わせを行う投影露光装置において、第1の
基準を設定した後の環境条件の経時的変化に伴って発生
する焦点合わせ機構の合わせずれを簡便に補正すること
が可能になり、投影露光装置の稼働率を殆ど低下させる
ことなく、正確な焦点合わせを維持させることを可能に
させる効果がある。
As described above, according to the configuration of the present invention, a projection optical system that projects a pattern of a photomask onto a substrate to be exposed, and a substrate stage that moves the substrate to be exposed in the XY direction parallel to the exposure surface and the Z direction perpendicular to the exposure surface And a focusing optical system that causes a light beam to be incident on the exposure surface of the substrate to be exposed and detects the reflected light thereof, and an adjusting mechanism provided in the detection means is interlocked with the Z direction of the substrate stage. The state of the substrate stage at which focusing is optimal is determined from the substrate to be exposed which has been exposed by changing the Z direction movement, and the adjustment point of the adjustment mechanism in that state is set as the first reference. In a projection exposure apparatus that performs focusing by adjusting an adjustment point of an adjustment mechanism to a first reference, a focus adjustment mechanism generated with a change over time in environmental conditions after the first reference is set. It is possible to easily correct the misalignment, almost without lowering the operating rate of the projection exposure apparatus, there is an effect which makes it possible to maintain accurate focusing.

【図面の簡単な説明】[Brief description of the drawings]

第1図は実施例を説明する側面図、 第2図は投影露光装置の概略側面図、 である。 図において、 1は被露光基板、2は露光面、 3はホトマスク、4はマスクパターン、 5は微小透光領域、6は遮光パターン、 10は投影光学系、13、13aは光束、 14はレンズ系、15は焦点面、 20は基板ステージ、21はXYテーブル、 22は基板チャック、30は焦点合わせ光学系、 32は入射光束、33は反射光、 34は検知手段、35は調整機構、 41は微小透光窓、42は焦点検知板、 43は光検知器、44は反射鏡、 である。 FIG. 1 is a side view illustrating an embodiment, and FIG. 2 is a schematic side view of a projection exposure apparatus. In the figure, 1 is a substrate to be exposed, 2 is an exposure surface, 3 is a photomask, 4 is a mask pattern, 5 is a small light transmitting area, 6 is a light shielding pattern, 10 is a projection optical system, 13 and 13a are light beams, and 14 is a lens. System, 15 is the focal plane, 20 is the substrate stage, 21 is the XY table, 22 is the substrate chuck, 30 is the focusing optical system, 32 is the incident light beam, 33 is the reflected light, 34 is the detecting means, 35 is the adjusting mechanism, 41 Is a small light transmitting window, 42 is a focus detection plate, 43 is a light detector, and 44 is a reflecting mirror.

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】ホトマスクのパターンを被露光基板に投影
する投影光学系と、被露光基板をその露光面に平行なる
XY方向および垂直なるZ方向に移動させる基板ステージ
と、被露光基板の露光面に光束を入射させてその反射光
を検知し、且つその検知手段に具える調整機構が基板ス
テージのZ方向動と連動する焦点合わせ光学系とを具え
て、基板ステージのZ方向動を変化させて露光した被露
光基板から焦点合わせが最適となる基板ステージの状態
を求めて、その状態における上記調整機構の調整点を第
1の基準となし、露光作業中は該調整機構の調整点を第
1の基準に合わせることにより焦点合わせを行う投影露
光装置において、 微小透光窓を有する焦点検知板を被露光基板の露光面に
平行させて基板ステージに設けると共に、微小透光領域
を有する遮光パターンをホトマスクに設け、 上記第1の基準の設定と相前後して、基板ステージによ
る焦点検知板の移動およびホトマスクのパターン面に平
行なホトマスクの移動により、投影光学系による微小透
光領域からの光束が微小透光窓を通過してその強度が最
大になり、且つ焦点合わせ光学系の入射光束が微小透光
窓の近傍を照射する状態にする焦点検知板の位置合わせ
を行い、その状態における上記調整機構の調整点を第2
の基準となし、 露光作業中は、適時に上記の焦点検知板の位置合わせを
行って、その状態における上記調整機構の調整点の第2
の基準とのずれ量を求め、そのずれ量でもって第1の基
準を補正することを特徴とする投影露光の焦点合わせ補
正方法。
1. A projection optical system for projecting a pattern of a photomask onto a substrate to be exposed, and a substrate to be exposed being parallel to the exposure surface.
A substrate stage that moves in the XY direction and a Z direction that is perpendicular to the substrate stage, and a reflection mechanism that irradiates a light beam on the exposure surface of the substrate to be exposed and detects the reflected light, and an adjustment mechanism provided in the detection means moves the substrate stage in the Z direction. An interlocking focusing optical system is provided to determine a state of the substrate stage at which the focusing is optimal from a substrate to be exposed which has been exposed by changing the movement of the substrate stage in the Z direction. A projection exposure apparatus that performs focusing by adjusting the adjustment point of the adjustment mechanism to the first reference during the exposure operation, wherein a focus detection plate having a small light-transmitting window is provided on the substrate to be exposed. Provided on the substrate stage in parallel with the exposure surface, and provided on the photomask with a light-shielding pattern having a small light-transmitting region, and before and after the setting of the first reference, focus detection by the substrate stage By the movement of the plate and the movement of the photomask parallel to the pattern surface of the photomask, the luminous flux from the small light-transmitting region by the projection optical system passes through the small light-transmitting window to maximize its intensity, and is incident on the focusing optical system. The position of the focus detection plate is adjusted so that the light beam irradiates the vicinity of the minute light transmitting window, and the adjustment point of the adjustment mechanism in that state is set to the second position.
During the exposure operation, the position of the focus detection plate is timely adjusted, and the second adjustment point of the adjustment mechanism in that state is adjusted.
A deviation amount from the reference, and correcting the first reference based on the deviation amount.
JP62307916A 1987-12-04 1987-12-04 Focusing correction method for projection exposure Expired - Lifetime JP2569640B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62307916A JP2569640B2 (en) 1987-12-04 1987-12-04 Focusing correction method for projection exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62307916A JP2569640B2 (en) 1987-12-04 1987-12-04 Focusing correction method for projection exposure

Publications (2)

Publication Number Publication Date
JPH01149424A JPH01149424A (en) 1989-06-12
JP2569640B2 true JP2569640B2 (en) 1997-01-08

Family

ID=17974709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62307916A Expired - Lifetime JP2569640B2 (en) 1987-12-04 1987-12-04 Focusing correction method for projection exposure

Country Status (1)

Country Link
JP (1) JP2569640B2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994032A (en) * 1982-11-22 1984-05-30 Nippon Kogaku Kk <Nikon> Apparatus for measuring characteristics of image forming optical system
JPS62208629A (en) * 1986-03-07 1987-09-12 Nec Kyushu Ltd Reduction stepper

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994032A (en) * 1982-11-22 1984-05-30 Nippon Kogaku Kk <Nikon> Apparatus for measuring characteristics of image forming optical system
JPS62208629A (en) * 1986-03-07 1987-09-12 Nec Kyushu Ltd Reduction stepper

Also Published As

Publication number Publication date
JPH01149424A (en) 1989-06-12

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