JP2976619B2 - Semiconductor device inspection apparatus and manufacturing method thereof - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for inspecting the electrical performance of a semiconductor device in an operating state, and more particularly to an apparatus for inspecting the electrical characteristics of a large number of probes for inspecting a semiconductor device. The present invention relates to a semiconductor device inspection apparatus which can be expanded.

[0002]

2. Description of the Related Art A wafer 1 shown in FIG. 8A is provided with a large number of semiconductor elements (chips) 2 for LSI on its surface, and is separated and used. FIG. 8B is a perspective view showing one of the semiconductor elements 2 in an enlarged manner.
A large number of electrodes 3 are arranged on the surface of the semiconductor element 2 along its periphery.

In order to industrially produce a large number of such semiconductor elements 2 and inspect their electrical performance, the deflection of the tungsten needle probe 5 obliquely coming out of the probe card 4 as shown in FIGS. A method is used in which the electrode 3 is rubbed with the used contact pressure to make contact and the electrical characteristics thereof are inspected.

As the density of semiconductor elements has increased, chip-shaped semiconductor elements 2 having solder balls 6 for solder connection on their electrodes as shown in FIG. 11 have been replaced with wiring boards 7 as shown in FIG. The method of facing the electrode 8 on the front surface and connecting via the solder ball 6 is suitable for high-density mounting and collective connection with high yield, and its application is expanding.

[0005] Inspection method and inspection apparatus capable of inspecting the characteristics of a semiconductor element having a solder ball for solder connection on its electrode when an operation test using a high-speed signal is required as the density of the semiconductor element increases and an operation test using a high-speed signal is required. Japanese Patent Application Laid-Open
The technique described in JP-A-8-73129 is known.
FIG. 13 is an explanatory view of the above-mentioned known technique, and FIG. 14 is an enlarged sectional view of a main part of the same. Reference numeral 11 denotes a multilayer wiring board in which a signal conductor wiring 9 having a constant characteristic impedance and having a power supply conductor layer 10 as a reference layer is embedded. Protruding electrodes 12 are provided so as to face a large number of solder balls 6 formed on electrodes (not shown) on the surface of the semiconductor element 2.

This known technique is based on the multi-layer wiring board 11 described above.
Is heated by a heat source 13, the protruding electrode 12 is pressed against the solder ball 6, the solder is melted to conduct, a signal is transmitted / received, and a semiconductor element is inspected. This is performed by heating to melt the solder and separating the protruding electrodes 12.

In this technique, the pattern of the electrode portion on the substrate facing the electrode pattern on the surface of the semiconductor element 2 is enlarged by the multilayer wiring board 11.

[0008] In order to inspect a semiconductor device, stress is less likely to be applied to the semiconductor device in a short time, and it is possible to cope with a large number of electrodes at a high density and an electrode having a step, and an inspection capable of measuring high-speed electric characteristics. As an apparatus, Japanese Patent Application Laid-Open No. 01-071
The technique described in JP-A-141 is known. FIG. 15 is an explanatory view of the above-mentioned known technique, and FIG.

A spring probe 15 comprising a tube and two movable pins slidably and loosely fitted in the tube and having a distal end always projecting outward from both ends of the tube by the elastic force of a spring. The tube of the probe 15 is fixed in a through hole formed at a position corresponding to the electrode 49 to be inspected, and the tip of the one movable pin is connected to the insulating substrate 16 for probe contact with the electrode 49.
And a core wire 51 for holding a core wire 51 of a coaxial cable 50 connected to an inspection circuit in a through hole formed at a position corresponding to the through hole of the insulating substrate 16 so as to be in contact with the tip of the other movable pin. Of the insulating substrate 52 is provided.

The core holding insulating substrate 52 is fixed to the tip of the core 51 by soldering, caulking or laser welding in a through hole formed at a position corresponding to the through hole of the probe holding insulating substrate 16. The fixed flanged electrode 53 is supported. The conductive substrate 54 superposed on the core holding insulating substrate 52 has a core 51 in a through hole formed at a position corresponding to the through hole of the core holding insulating substrate 52.
And the distal end of the shield 55 of the coaxial cable 50 covering the core wire 51 is connected by solder 56.

In this known technique, the semiconductor element 2 is inspected by pressing the spring probe 15 having movable pins at both ends against the electrode 49 to transmit and receive signals. This technique uses an insulating substrate 5 opposed to an insulating substrate 16 for holding a probe which is the same as an electrode pattern for inspecting a semiconductor element.
The pattern of the second electrode portion is enlarged by the coaxial cable 50.

[0012]

With the increase in the density of semiconductor devices, the number of pins for inspection probes has been increased.
It is desired to develop a simple wiring pattern enlargement technology for connecting a probe terminal to an inspection circuit.

In the conventional method for inspecting a probe card shown in FIGS. 9 and 10, due to the shape of the probe 5, the concentrated inductance there is large and there is a limit to the inspection with a high-speed signal. That is, if the characteristic impedance of the signal line on the probe card is R and the concentrated inductance of the probe is L, the time constant is L / R, R = 50 ohm, L = 5
In the case of 0 nH, it is 1 ns, and when such a high-speed signal is handled, the waveform becomes dull and accurate inspection cannot be performed. Therefore, it is usually limited to DC characteristic inspection. Further, in the above-described probing method, there is a limit in the spatial arrangement of the probes, and it is impossible to cope with an increase in the density of the electrodes of the semiconductor element and an increase in the total number.

On the other hand, as shown in FIGS. 13 and 14, in the method of inspecting with a probe card composed of a multilayer wiring board in which signal lines are formed into lines having a constant characteristic impedance, high-speed electrical characteristics can be inspected. However, it takes a long time to design and manufacture, it is expensive, it is difficult to correct the power supply oscillation countermeasures, and the response to the pattern change is poor.

Further, as shown in FIGS. 15 and 16, in the method of inspecting a coaxial cable having a constant characteristic impedance by using a substrate fixed to a through hole of an insulating substrate for holding a core wire, high-speed electrical characteristics are inspected. Although it is possible to do this, it is necessary to insert a coaxial cable sequentially into the through holes of the insulating substrate for holding the core wire and perform a delicate assembling operation to fix the electrode with the flange to the core wire, and it takes time and skill to assemble. Is necessary and work efficiency is poor.

The present invention has been made in view of the above circumstances, and has a simple structure, is easy to assemble, and is suitable for changing patterns.
An object of the present invention is to provide a substrate configuration for enlarging a wiring pattern which realizes a method of enlarging and extracting a wiring pattern from a probe which can be easily dealt with only by drilling with C, and a semiconductor element inspection apparatus using the same.

[0017]

In order to achieve the above-mentioned object, as a substrate configuration for enlarging a wiring pattern, an electrode is provided at one end, and a tube provided with a coaxial cable or a wire connected from the other end to an inspection circuit is individually provided. Place the wiring for pattern enlargement manufactured in advance at a position facing the electrode of the probe at a diameter slightly larger than the outer diameter of the coaxial cable or wire and the outer diameter of the tube, and the coaxial cable or wire. A method was devised in which a through hole having a diameter slightly smaller than the outer diameter of the electrode provided at the tip of the tube was inserted into and fixed to the tube fixing substrate. More specifically, a probe is brought into contact with an electrode pad of a semiconductor element, and a configuration of a wiring portion for pattern enlargement for transmitting an electric signal from the other end of the probe to an inspection apparatus main body is provided. A metal electrode having a diameter slightly larger than the diameter of the through hole is provided at one end of a conductive tube having a diameter slightly smaller than the diameter of the through hole in the through hole of the insulating substrate having a through hole facing the pattern. The tube having a configuration in which one end of a wire for transmitting an electric signal of the semiconductor element to an inspection device is provided at the other end of the tube, and the wire and the insulating substrate are fixed by an adhesive. The other end of the wire is connected to an electrode on a wiring board connected to the main body of the inspection apparatus, so that an electric signal of the probe is conducted to the main body of the inspection apparatus. Further, a probe is brought into contact with an electrode pad of a semiconductor element, and a configuration of a wiring portion for pattern enlargement for transmitting an electric signal from the other end of the probe to an inspection apparatus main body is provided. One end of a wire for transmitting an electric signal of the semiconductor element to an inspection device is formed into the through-hole of the insulating substrate having a through-hole formed therein by pressure to a diameter slightly larger than the diameter of the through-hole of the insulating substrate. The wire is inserted and the insulating substrate is fixed by an adhesive, and the other end of the wire is connected to an electrode on a wiring board connected to the inspection device main body. Is conducted. Further, a probe is brought into contact with an electrode pad of a semiconductor element, and a configuration of a wiring portion for pattern enlargement for transmitting an electric signal from the other end of the probe to an inspection apparatus main body is provided. The diameter of the through-hole should be
Conductive chip with one end formed to a slightly larger diameter
The conductive tube is inserted into the other end of the conductive tube.
Wire for transmitting the electric signal of the semiconductor element to
An end is provided, and the wire and the insulating substrate are fixed with an adhesive.
The other end of the wire is connected to a wiring base connected to the inspection apparatus body.
The electrical signal of the probe is conducted to the main body of the inspection apparatus by the configuration connected to the electrode on the plate . Further, the wiring pattern enlarged substrate having the through hole is made of a free-cutting ceramic, acrylic, polyimide, engineering plastic or photosensitive glass. Further, the wire for electric signal transmission is made of any one of copper, tungsten, stainless steel, copper-tin alloy, and beryllium-copper alloy, and the wire is inserted into a tube of polyimide or polytetrafluoroethylene to form a wiring material. It constitutes. Further, the wiring material for the electric signal transmission is copper, tungsten, stainless steel, copper-tin alloy, beryllium-copper alloy, and any one of beryllium-copper alloy coated with polytetrafluoroethylene, polyimide, polyparaxylene, or enamel. Make up.
Further, the whole or a part of the wiring material for electric signal transmission is constituted by a coaxial cable having tungsten or copper-tin alloy as a core wire. Further, the metal electrode fixed to the above-described conductive tube is subjected to metal plating with high conductivity in advance or after the tube is fixedly formed. Further, the wire for enlarging the wiring pattern described above is fixed to a wiring pattern enlarging substrate using a conductive adhesive. Also, by using these wiring pattern enlarged substrates, a probe tube and two slidable members inside the probe tube, the tip portions of which always project outward from the probe tube by the elastic force of the spring. A probe holding substrate fixed to a through hole formed at a position corresponding to an electrode of a semiconductor element to be inspected, the probe comprising a movable pin, and a probe holding substrate in contact with the electrode of the semiconductor element; A metal electrode having a through-hole formed at a position corresponding to the through-hole and a wire connected to the inspection circuit fixed to the end of the tube, and having a diameter slightly larger than the diameter of the through-hole at the other end of the tube at the end. And a wiring pattern enlarging substrate fixed so as to be in contact with the tip of one of the movable pins of the probe. In addition, using these wiring pattern enlarged substrates, a probe in which a probe of beryllium-copper alloy or tungsten is used as a probe and the probe is fixed in a through hole formed at a position corresponding to an electrode of a semiconductor element to be inspected. A through hole for wiring insertion is formed at a position corresponding to the probe on the holding substrate and the probe holding substrate, and a wire to be connected to an inspection circuit is fixed to the tip of the tube, and the wiring is inserted at the other end of the tube. A metal electrode formed at the tip with a diameter slightly larger than the diameter of the through hole for use is provided with a wiring pattern enlargement substrate that is fixed so as to be in contact with the probe, and the two substrates are connected. .

[0018]

According to the above construction, a tube provided with a coaxial cable or a wire to be connected to an inspection circuit manufactured separately in advance is simply inserted into the tube fixing substrate and fixed, and the wiring pattern enlarged substrate is provided. A circuit pattern enlargement board that realizes a method of enlarging and extracting a wiring pattern from a probe that can be manufactured, has a simple structure, is easy to assemble, and can easily respond to pattern changes only by drilling with NC. A configuration and a semiconductor device inspection apparatus using the same can be provided.

Further, when a coaxial cable is used for wiring from the wiring pattern enlarging substrate, the impedance can be matched, and an inspection with less disturbance of a high-speed signal can be performed. Further, when the wiring whose surface is insulated is fixed to the substrate with a conductive adhesive, it is possible to expect an inspection in which signal disturbance due to crosstalk is reduced by a shielding effect. In this case, since a wire having an outer diameter of a limit defined by the pattern pitch can be used, the wiring resistance can be reduced, and a power supply line with good characteristics can be expected.

[0020]

1 and 2 show an embodiment of a semiconductor device inspection apparatus according to the present invention, and are partial cross-sectional views showing main parts.
Since the details of the configuration of the wiring pattern enlargement substrate will be described later with reference to FIGS. 3 to 7, the configuration of the entire semiconductor inspection apparatus will be described first with reference to FIGS.

Reference numeral 2 in FIG. 1 denotes a semiconductor element to be inspected, on which a number of electrodes 14 are arranged. A plurality of spring probes 15 facing the electrode 14
Are arranged. The spring probe 15 is composed of a probe tube and two movable pins which are slidable in the probe tube and whose distal end always projects outward from the probe tube by the elastic force of the spring. ing. The spring probe 15 penetrates a pair of upper and lower insulating substrates 16 and has a tip portion 17 of a probe having a diameter slightly smaller than the tube outer shape of the spring probe 15.
Penetrates the insulating substrate 18 for positioning the probe tip in a slidable manner. A spacer 1 suitable for the length of the spring probe 15 is provided between the pair of upper and lower insulating substrates 16.
9 are provided. The insulating substrates 16 and 18 are
It is composed of free-cutting ceramics, acrylic, polyimide, engineering plastic, or photosensitive glass with through holes formed by etching.

The configuration of a wiring portion for enlarging a pattern for transmitting an electric signal from the other end of the spring probe 15 to the main body of the inspection apparatus is connected to an inspection circuit (not shown). Wiring board 21 to which coaxial connector 39 is fixed
A tube 25 is fixed to one end of a wire 24 connected by solder 23 to an electrode 22 formed on the surface of the substrate, and a through hole of an insulating substrate 16 for holding the spring probe 15 at the other end of the tube 25. A metal electrode 26 having an outer diameter slightly larger than the diameter of the through-hole of the insulating substrate 20 for holding the tube 25 having a through-hole formed at the corresponding position at the distal end is connected to the tip of one movable pin of the spring probe 15. The wire 24 connected to the tube 25 fixed so as to be in contact with the portion 27 is fixed to the insulating substrate 20 for enlarging the wiring pattern with an adhesive 28.

An insulating substrate 20 for enlarging the wiring pattern;
An insulating substrate 1 for holding the spring probe 15
6, the metal electrode 26 and the tip 27 of one of the movable pins of the spring probe 15 are brought into contact with each other with a spacer 29 interposed therebetween so as to allow conduction.

FIG. 2 shows another embodiment of the semiconductor device inspection apparatus according to the present invention. Reference numeral 2 in FIG. 2 denotes a semiconductor element to be inspected, on which a number of solder balls 30 are arranged. These solder balls 30 are formed on the electrodes 14 of the semiconductor element 2. Many solder balls 3
A plurality of beryllium-copper alloy or tungsten probes 31 are arranged to face each other. The tip of the probe 31 is sharpened by electrolytic polishing or lathe processing to form a needle-like probe.

The probe 31 penetrates the insulating substrate 32,
One end of the probe 31 is buried with an adhesive 34 in a stainless steel outer frame 33 and a flat surface 35 is formed by polishing, and then the exposed surface of the probe 31 is nickel-plated, followed by solder plating, tin plating or gold plating. A plated surface 36 made of a metal having good solderability is formed. Outer frame 33 of a substrate having solder balls 37 formed on plating surface 36
The metal electrode 26 and the solder ball 37 on the plating surface 36 formed at one end of the probe 31 are brought into contact with each other with a spacer 38 interposed between the metal electrode 26 and the insulating substrate 20 for enlarging the wiring pattern described in FIG. Then, it is configured to be able to conduct by solder connection.

FIGS. 3 to 7 are cross-sectional views showing an enlarged main part of the embodiment of the wiring pattern enlarged substrate portion.

Reference numeral 25 in FIG. 3 denotes a conductive tube,
Reference numeral 24 denotes a wire, and reference numeral 26 denotes a metal electrode formed at the tip with an outer diameter slightly larger than the diameter of the through hole 40 formed in the insulating substrate 20. The above 24 and the metal electrode 26 are connected to the conductive tube 25 by crimping. This connection may be by laser welding, spot welding or solder connection. Wiring board 21 for connection to inspection circuit
The lead wiring for connecting to the electrode 22 is made of copper,
Tungsten, stainless steel, copper-tin alloy, beryllium-
A core wire 24 made of a conductive metal such as a copper alloy is coated with an insulating resin such as polyimide, polytetrafluoroethylene, polyparaxylene, or enamel, or is made of copper, tungsten, stainless steel, or a copper-tin alloy A core wire 24 made of a conductive metal such as beryllium-copper alloy is inserted into an insulating tube 41 such as polyimide or polytetrafluoroethylene.

In practicing the present invention, the tube 25 having the core wire 24 and the metal electrode 26 connected to both ends is connected to the lead-out wiring on the side opposite to the side to which the tube 25 is connected from the through-hole of the wiring pattern enlarged substrate. 40, an adhesive 28 is applied or injected to the other opposite surface of the insulating substrate 20 in a state where the metal electrode 26 is in contact with the surface of the insulating substrate 20, and a wiring for drawing out to an inspection circuit is provided. Is fixed to the insulating substrate 20 to facilitate assembly. As the adhesive 28, in addition to the conductive resin, an insulating resin such as cyanoacrylate, ultraviolet curable resin, and thermosetting resin may be used.

FIG. 4 shows another embodiment in which a coaxial cable is used as a lead wiring for connection to an electrode 22 of a wiring board 21 for connection to an inspection circuit. The above-mentioned lead-out wiring is formed by covering the insulating material 42 such as polytetrafluoroethylene, polyparaxylene or polyimide with the core wire 24 made of tungsten or copper-tin alloy, and covering the insulating material 42 with the conductive shielding material 43. It consists of a coaxial cable. In order to fix the conductive shield material 43 to the insulating substrate 20, a conductive resin is suitably used as the adhesive 28 in terms of electrical characteristics.

FIG. 5 shows an embodiment in which the metal electrode 44 is formed by using the core wire 24 of the lead-out wiring for connecting to the electrode 22 of the wiring board 21 for connecting to the inspection circuit. An outer diameter slightly larger than the diameter of the through hole 40 formed in the insulating substrate 20 is formed at the front end by pressure molding. The diameter of the through hole 40 formed in the insulating substrate 20 is slightly larger than the outer diameter of the insulating coating film or the insulating tube 41.

FIG. 6 shows the metal electrode 44 of FIG. 5 formed by pressing the tip of the conductive tube 45 to an outer diameter slightly larger than the diameter of the through hole 40 formed in the insulating substrate 20. This is an example in which 46 is formed. Note that the diameter of the through hole 40 formed in the insulating substrate 20 is slightly larger than the outer diameter of the shield material 43 covering the insulating material 42.

FIG. 7 shows a drawing wiring and an insulation for connecting to the electrode 22 of the wiring board 21 for connecting to the inspection circuit of the main part of the embodiment of the enlarged wiring pattern board part of FIGS. 3 to 6 above. This is an embodiment in which a conductive adhesive 48 is applied or injected over an insulating adhesive 47 as an adhesive for fixing the substrate 20. Thus, insulation between the wirings can be reliably ensured, and the conductive adhesive 48 can reduce crosstalk between the wirings for drawing.

It should be noted that the metal electrode 26 fixed to the conductive tube or the electrodes 44, 46 formed by pressing are
By applying a metal plating such as gold or rhodium having high conductivity before or after the tube is fixed, better contact characteristics can be obtained.

FIG. 17 is an explanatory view showing a main part of an inspection apparatus which is an embodiment using the wiring pattern enlarged substrate of the present invention.

In this embodiment, the inspection device is configured as a wafer prober in the manufacture of a semiconductor device. That is, the semiconductor wafer 1 to be inspected is removably mounted on the sample table 60 provided substantially horizontally. A plurality of electrodes 14 as external connection electrodes are formed on the surface of the semiconductor wafer 1. Sample table 6
Numeral 0 is supported by a vertical drive unit 62 composed of, for example, a stepping motor via a vertical vertical shaft 61, and this vertical drive unit 62 is further supported by an XY supported by a housing 63.
It is fixed on the stage 64. The horizontal and vertical positioning operations of the sample stage 60 are performed by combining the movement operation of the XY stage 64 in the horizontal plane with the vertical movement of the elevation drive unit 62. The sample stage 60 is provided with a rotating mechanism (not shown), and the sample stage 6 in a horizontal plane is provided.
A rotation displacement of 0 is enabled.

The wiring board 21 is provided above the sample table 60 in a posture facing the sample table 60 in parallel, and a wiring pattern enlarged substrate 65 is horizontally provided on a surface of the wiring board 21 facing the sample table 60. It is fixed to. The plurality of electrodes 1 formed on the semiconductor wafer 1 are provided on the insulating substrate 16 for holding the probe in contact with the wiring pattern enlarged substrate 65.
The spring probes 15 arranged at a predetermined pitch so as to match each of the four are fixed vertically downward,
Each probe 15 is connected to the tester 67 from the electrode 22 of the wiring board 21 via the wire 24 fixed to the wiring pattern expansion board 65 via the cable 66 connected to the coaxial connector 39 of the wiring board 21. ing.

The elevation drive control unit 68 for controlling the operation of the elevation drive unit 62 is connected to the microprocessor 70 via the control bus 69, and the vertical movement of the sample table 60 by the elevation drive unit 62 in the vertical direction. Is performed in conjunction with the tester 67.

The operation of this embodiment will be described below.
The semiconductor wafer 1 is fixed on the sample stage 60, and the XY stage 64 and the rotating mechanism are used to fix the semiconductor wafer 1.
The electrode 14 formed on the insulating substrate 1 for holding the probe.
The position is adjusted just below the spring probe 15 fixed to 6. After that, the elevation drive unit 62 is operated via the elevation drive control unit 68 to raise the sample table 60 to a predetermined height, whereby each of the plurality of probes 15 connected and fixed to the wiring pattern expansion board 65 is fixed. Is brought into contact with each of the plurality of electrodes 14 of the target semiconductor element at a predetermined pressure. In this state, operation power, an operation test signal, and the like are transmitted and received between the semiconductor element formed on the semiconductor wafer 1 and the tester 67 via the cable 66, the wiring board 21, the wire 24, and the probe 15, and the semiconductor It is determined whether or not the operation characteristics of the element are acceptable. The above-described series of operations is performed for each of the plurality of semiconductor elements formed on the semiconductor wafer 1 to determine whether or not the operation characteristics are appropriate.

[0039]

According to the present invention, as the density of semiconductor elements increases, the number of pins for inspection probes increases, and
As a wiring pattern enlargement substrate for connecting the probe terminal to the inspection circuit, the extraction wiring in which electrodes are individually formed in advance at one end of the extraction wiring for connecting the wiring pattern expansion substrate to the inspection circuit is used. After being inserted into the through hole of the wiring pattern enlarging substrate having a diameter slightly larger than the outer diameter of the wiring, the wiring pattern can be easily enlarged by fixing with an adhesive, and the structure is simple, and the assembly is simple. For expanding a wiring pattern from a probe and realizing a method of enlarging and extracting a wiring pattern from a probe, which can easily cope with pattern change only by drilling with NC, and a semiconductor element inspection apparatus using the same The effect is that design and manufacturing can be performed in a short period of time.

By using a conductive adhesive as a coaxial cable or a shield material, an inspection apparatus with less rounding of inspection signals can be realized.

[Brief description of the drawings]

FIG. 1 is an overall sectional view of an embodiment of a semiconductor device inspection apparatus according to the present invention.

FIG. 2 is an overall sectional view of another embodiment of the semiconductor device inspection apparatus according to the present invention.

FIG. 3 is a cross-sectional view of a wiring pattern enlarged substrate portion of the present invention.

FIG. 4 is a sectional view of a wiring pattern enlarged substrate portion of the present invention.

FIG. 5 is a cross-sectional view of a wiring pattern enlarged substrate portion of the present invention.

FIG. 6 is a sectional view of a wiring pattern enlarged substrate portion of the present invention.

FIG. 7 is a cross-sectional view of a wiring pattern enlarged substrate portion of the present invention.

FIG. 8 is a perspective view of a wafer and a perspective view of a semiconductor element.

FIG. 9 is a sectional side view of a conventional inspection probe.

FIG. 10 is a plan view of FIG. 9;

FIG. 11 is a perspective view showing a semiconductor element having a solder ball on an electrode.

FIG. 12 is a perspective view showing a mounted state of a semiconductor element which has undergone solder fusion connection.

FIG. 13 is a diagram showing a probe card including a multilayer wiring board having a protruding electrode and a heat source.

14 is a cross-sectional view of the multilayer wiring board of FIG.

FIG. 15 is a partial cross-sectional view showing a main part of a conventional semiconductor device inspection apparatus.

16 is a cross-sectional view showing a fixed portion of the probe and the coaxial cable shown in FIG.

FIG. 17 is a configuration diagram of a driving unit of the semiconductor element inspection device.

[Explanation of symbols]

2 ... semiconductor element, 14 ... electrode, 15 ... spring probe, 21 ... wiring board, 22 ... electrode, 24 ... wire, 25 ...
Tube, 26: metal electrode, 28: adhesive, 30: solder ball, 31: probe, 41: insulating tube, 4
5 ... conductive tube, 47 ... insulating adhesive, 48 ... conductive adhesive

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-64-71141 (JP, A) JP-A-3-185847 (JP, A) JP-A-63-117268 (JP, A) 177038 (JP, A) JP-A-3-200344 (JP, A) JP-A-63-317784 (JP, A) JP-A-3-106049 (JP, A) JP-A-1-161173 (JP, A) (58) Fields investigated (Int. Cl. ⁶ , DB name) H01L 21/66 G01R 31/26

Claims (11)

(57) [Claims] 1. A wiring structure for enlarging a pattern for contacting a probe with an electrode pad of a semiconductor element and transmitting an electric signal from the other end of the probe to a main body of an inspection apparatus, wherein the pattern of the probe is provided. A metal electrode having a diameter slightly larger than the diameter of the through hole is provided at one end of a conductive tube having a diameter slightly smaller than the diameter of the through hole in the through hole of the insulating substrate having a through hole facing the same,
The tube having a configuration in which one end of a wire for transmitting an electric signal of the semiconductor element to an inspection device is provided at the other end of the tube, and the wire and the insulating substrate are fixed by an adhesive. The other end of the wire is connected to an electrode on a wiring board connected to the inspection apparatus main body, so that an electric signal of the probe is conducted to the inspection apparatus main body. Pattern expansion board. 2. A wiring structure for enlarging a pattern for contacting a probe with an electrode pad of a semiconductor element and transmitting an electric signal from the other end of the probe to a main body of an inspection apparatus, wherein the pattern of the probe is provided. One end of a wire for transmitting an electric signal of the semiconductor element to the inspection device is pressed to a diameter slightly larger than the diameter of the through hole of the insulating substrate, on the through hole of the insulating substrate having a through hole facing the hole. The wire is molded and inserted, the wire and the insulating substrate are fixed by an adhesive, and the other end of the wire is connected to an electrode on a wiring board connected to the main body of the inspection apparatus. An enlarged wiring pattern board for a semiconductor device inspection device, wherein the substrate is electrically connected to the inspection device body. 3. A configuration of a wiring portion for enlarging a pattern for contacting a probe with an electrode pad of a semiconductor element and transmitting an electric signal from the other end of the probe to a main body of the inspection apparatus, wherein the pattern of the probe is provided. A conductive tube having one end formed to have a diameter slightly larger than the diameter of the through-hole is inserted into the through-hole of the insulating substrate having a through-hole opposed thereto, and an inspection device is provided at the other end of the conductive tube. One end of a wire for transmitting an electric signal of the semiconductor element is provided, the wire and the insulating substrate are fixed by an adhesive, and the other end of the wire is an electrode on a wiring board connected to the inspection apparatus main body. A circuit pattern enlarged substrate for a semiconductor device inspection device, wherein an electrical signal of a probe is conducted to a main body of the inspection device by a structure connected to the substrate. Wherein said through-hole wiring pattern was formed expanded substrate machinable ceramic, acrylic, polyimide, claim 1 乃 optimum 3, characterized in that it consists of engineering plastic or photosensitive glass 1
Item 13. The wiring pattern enlarged substrate of the semiconductor element inspection device according to the item [ 6]. 5. The electric signal transmission wire is made of any one of copper, tungsten, stainless steel, copper-tin alloy, and beryllium-copper alloy, and the wire is inserted into a polyimide or polytetrafluoroethylene tube. any of claims 1 to 3, characterized in that it constitutes a wiring material Te
2. The wiring pattern enlarged substrate of the semiconductor device inspection device according to claim 1 . 6. A wiring material for transmitting an electric signal, wherein one of copper, tungsten, stainless steel, copper-tin alloy, and beryllium-copper alloy is coated with polytetrafluoroethylene, polyimide, polyparaxylene, or enamel. 4. The wiring according to claim 1, wherein the wiring is formed by a wiring.
2. An enlarged wiring pattern substrate for a semiconductor device inspection apparatus according to claim 1 . 7. The electrical signal transmission of all or part of tungsten or copper wiring material - tin alloy in any one of claims 1 to 3, characterized in that it constitutes a coaxial cable with the core wire A wiring pattern enlarged substrate of the semiconductor device inspection apparatus according to the above. 8. The method according to claim 1, wherein the metal electrode fixed to the conductive tube is plated with a metal having high conductivity in advance or after the tube is fixed . A wiring pattern enlarged substrate of the semiconductor device inspection device according to any one of claims 1 to 7 . 9. The wire for enlarging the wiring pattern described above,
The wiring pattern enlarged substrate according to any one of claims 1 to 3 , wherein the wiring pattern enlarged substrate is fixed to the wiring pattern enlarged substrate using a conductive adhesive. 10. A probe comprising a probe tube and two movable pins which are slidable in the probe tube and whose distal end always projects outward from the probe tube by the elastic force of a spring. A probe holding substrate which is fixed in a through hole formed at a position corresponding to the electrode of the semiconductor element to be inspected and which is in contact with the electrode of the semiconductor element; and a through hole is provided at a position corresponding to the through hole of the probe holding substrate. A wire that forms a hole and is connected to the test circuit is fixed to the tip of the tube, and a metal electrode formed at the tip of the other end of the tube with a diameter slightly larger than the diameter of the through hole is attached to one end of the probe. wiring pattern of any one of claims 1 to 9 serial <br/> mounting is characterized by providing a fixed wiring pattern enlarged board to contact against the distal end of the movable pin The semiconductor device inspection apparatus using the down expansion board. 11. A probe holding substrate in which a probe is fixed in a through hole formed at a position corresponding to an electrode of a semiconductor element to be inspected, using a beryllium-copper alloy or tungsten needle as a probe, and the probe. A wire for connecting a wire is formed at a position corresponding to the probe on the holding substrate, and a wire to be connected to an inspection circuit is fixed to the tip of the tube. 10. A structure in which a metal electrode having a slightly larger diameter formed at the tip thereof is provided with a wiring pattern enlarging substrate fixed so as to be in contact with the probe, and the two substrates are connected to each other. A semiconductor device inspection apparatus using the wiring pattern enlarged substrate according to any one of the above .