JP3279478B2 - Electrode substrate and liquid crystal element provided with the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrode substrate and a liquid crystal device having the same. The present invention particularly relates to an electrode substrate applied to a liquid crystal display element used as a flat panel display.

[0002]

2. Description of the Related Art In recent years, liquid crystal elements have been receiving attention as display elements replacing CRTs. This liquid crystal element generally has liquid crystal sandwiched between a pair of substrates having electrodes. Liquid crystal elements can be roughly classified into simple matrix liquid crystal elements and active matrix liquid crystal elements depending on the driving method.

Further, a chiral smectic liquid crystal element using a chiral smectic liquid crystal exhibiting ferroelectricity and antiferroelectricity has various advantages as compared with a liquid crystal element using a conventional twisted nematic liquid crystal (TN liquid crystal). Attracts attention from.

A general configuration of a simple matrix type liquid crystal element will be described below with reference to FIG. FIG. 5 (a)
FIG. 5 is a schematic cross-sectional view illustrating an example of a simple matrix liquid crystal element, and FIG. 5B is a schematic plan view illustrating an example of an electrode substrate used in the simple matrix liquid crystal element. As shown in FIG. 5A, the liquid crystal element has a configuration in which a liquid crystal 6 is sandwiched between a pair of electrode substrates 81 and 82. Here, a chiral smectic liquid crystal (ferroelectric liquid crystal) showing ferroelectricity is used as the liquid crystal 6.

The electrode substrates 81 and 82 are made of a glass substrate 61,
A transparent electrode 62 made of ITO (indium tin oxide) or the like formed in stripes thereon, and an insulating film (dielectric film: upper and lower electrodes) made of Ta ₂ O ₅ or the like formed so as to cover the transparent electrode 62 Short-circuit preventing film) 63 and an alignment film 6 made of polyimide or the like formed on the insulating film 63
4, respectively.

The upper and lower electrode substrates 81 and 82 are opposed to each other so that the transparent electrodes 62 are orthogonal to each other.
It is adhered by a sealing material 65.

As the chiral smectic liquid crystal 6, a liquid crystal exhibiting a chiral smectic phase such as an SmC * phase and an SmH * phase is generally used. Specifically, a ferroelectric liquid crystal composition comprising one or more liquid crystal compounds having a phenylpyrimidine core and an optically active chiral dopant is preferably used.

The chiral smectic liquid crystal has a large distance between the upper and lower substrates (liquid crystal layer thickness: cell thickness) (for example, 100 μm).
In this case, the major axis of the liquid crystal molecules takes a twisted arrangement (spiral structure having a helical axis in the direction of the substrate surface), and the distance between the upper and lower substrates is set to, for example, about 1 to 3 μm. The helical structure of the liquid crystal molecules is released, and the long axis of the liquid crystal molecules is substantially parallel to the substrate (NA Clark et al.).
al, MCLC, vol. 94 (1993) p21
3-234).

On the other hand, the transparent electrode 62 made of ITO generally has a thickness of 50 nm to 150 nm. The insulating film 63 may be formed of silicon oxide, titanium oxide, or the like, and generally has a thickness of 50 to 300 nm.

The performance of the transparent electrode 62 is required to have high light transmittance and low resistivity. The liquid crystal element is used as a display, an optical shutter, or the like by controlling the light transmittance. If the light transmittance of a member such as a transparent electrode is low, the contrast may decrease, which is not preferable. In addition, the liquid crystal element is used by sandwiching liquid crystal between two electrode substrates and applying an electric field to the liquid crystal, and is a capacitive load in terms of an electric circuit. Therefore, the propagation delay of the voltage waveform due to the resistance of the transparent electrode cannot be ignored.

[0011] However, the resistivity of the transparent electrode 62 made of ITO is, 20～400Omu in sheet resistance is ^{200 × 10 -8 Ωm~4000 × 10 -8} Ωm in volume resistivity considerably higher than the metal material ( For example, there is a problem that the volume resistance of aluminum is about 3 × 10 ⁻⁸ Ωm). A method of increasing the thickness of the transparent electrode to reduce the resistivity is considered, but this is not practical because it causes a decrease in light transmittance. Therefore, the propagation delay of the voltage waveform due to the high resistivity of the transparent electrode has been a problem with the enlargement of the effective optical modulation area (display area in the case of a display element) and the definition of the liquid crystal element. In particular, a chiral smectic liquid crystal element having a small cell thickness, especially having a cell thickness of 1 to 3 μm
And a thin, surface-stabilized ferroelectric liquid crystal device (surface stage) which is 1/3 to 1/5 that of a normal TN liquid crystal device.
built ferroelectric liq
In the case of a uid crystal device, the propagation delay of the voltage waveform is increased even when the same electrode substrate is used, as compared with a TN liquid crystal element having a relatively large cell thickness.

In order to solve the above problem, chromium (volume resistance = 15 × 1) is provided in parallel with a transparent electrode made of ITO.
^0-8 Ωm) or molybdenum (volume resistance = 6 × 10 ^-8 Ω)
m) is formed on the surface of the transparent electrode (the surface on the liquid crystal side).
No. -19497).

However, even if the metal wiring is provided, the thickness of the metal wiring cannot be increased due to the limited cell thickness, that is, the gap between the transparent electrodes, and the alignment defect occurs due to the presence of the metal wiring. The problem was left. In particular, a chiral smectic liquid crystal device having a clear smectic layer structure is a problem because the occurrence of alignment defects becomes remarkable.

The reason that the thickness of the metal wiring cannot be increased due to the limited gap between the transparent electrodes is that, for example, when the gap between the transparent electrodes is 1.1 μm, when the metal wiring is formed on ITO, The thickness cannot be more than 550 nm. When the thickness of the metal wiring is 550 nm, the upper and lower metal wirings come into contact with each other, resulting in a short circuit.

In order to prevent the occurrence of alignment defects due to the presence of the metal wiring, the metal wiring usually has a thickness of 25 mm.
Those having a thickness of 0 nm or less are used. The liquid crystal molecules are arranged (aligned) in a certain order by the alignment films formed on the upper and lower transparent electrodes. Then, the alignment state of the liquid crystal molecules is greatly affected by the surface state of the electrode substrate.

The effects of the metal wiring on the alignment state of the liquid crystal molecules include irregularities of the metal wiring itself and the fact that the presence of the metal wiring makes it impossible to perform a uniform rubbing treatment on the alignment film. The difference between the alignment state of the liquid crystal molecules around the wiring and the alignment state of the liquid crystal molecules away from the metal wiring may cause a difference in optical characteristics depending on the location, or a change in the electric field response characteristic depending on the location, resulting in cross-over. Talks are more likely to occur.

Further, as the resolution of the liquid crystal element becomes higher and the pixel size becomes smaller, such an effect tends to increase.

Therefore, in order to reduce the influence of the metal wiring on the alignment state of the liquid crystal molecules, a metal wiring pattern is formed on a glass substrate, an organic resin is buried in the metal wiring gap, and an ITO or the like is placed thereon. A method of forming an electrode substrate by forming a transparent electrode pattern (see Japanese Patent Laid-Open No.
No. 347810).

This method will be described with reference to FIG. FIG. 4 shows a case where a metal wiring pattern 90 is formed on a glass substrate 61.
Is formed, a gap between the metal wirings 90 is formed by a dielectric 91.
It is a schematic illustration of a method of forming a smooth substrate 92 by filling it with (specifically, an ultraviolet curable resin) and forming a transparent electrode pattern 62 made of ITO thereon.

First, as shown in FIG. 4A, a thick metal layer 93 having a thickness of 1 to 2 μm is formed on a glass substrate 61. Next, as shown in FIG. 4B, a metal wiring pattern 90 is formed by patterning the thick metal layer 93. Here, a silane coupling treatment or the like is performed on the glass substrate 61 so that the adhesiveness to an ultraviolet curing resin provided later is enhanced. Subsequently, as shown in FIG. 4C, an ultraviolet curable resin 91 is dropped on a smooth mold substrate 95, and a substrate (metal wiring substrate) 96 on which a metal wiring pattern is formed is joined. Here, the ultraviolet curing resin 91 is
Instead of being dropped on the mold substrate, it may be dropped on the metal wiring board. Then, as shown in FIG.
6 is pressed and adhered, and then irradiated with ultraviolet rays to cure (press-mold) the ultraviolet-curable resin. Next, as shown in FIG. 4E, the smooth substrate 92 is separated from the mold substrate 95.
Subsequently, as shown in FIG. 4F, a transparent electrode pattern 90 made of ITO is formed on the metal wiring board.

[0021]

However, even if this method is used, the following problems remain. That is, (a) it is difficult to form the resin 91 between the metal wirings after forming the metal wiring pattern 90 on the glass substrate 61, and (b) the electrical connection between the metal wiring 90 and the transparent electrode 62. (Reducing the contact resistance) is difficult, and (c) since the metal wiring 90 is formed directly on the glass substrate, the outside (the glass substrate 61) is formed at the interface between the glass substrate 61 and the metal wiring 90. Side) is reflected, and there is room for improvement in the visibility when used as a display.

Hereinafter, these problems will be described in more detail.

First, the point (a) will be described. When a metal wiring is formed on a glass substrate, the metal wiring cannot be made too thick, so that the pressure molding step shown in FIG. 4D takes time.

One of the reasons why the thickness of the metal wiring cannot be increased is that it is difficult to form a thick metal film uniformly on the entire surface of the glass substrate. In a vacuum film forming method such as sputtering, the film thickness is 2-3 μm.
This is because the surface roughness (irregularity) of the metal film becomes larger from about m. When the roughness of the metal film surface increases,
It is difficult to control the cell thickness of the liquid crystal element, which is not preferable. Further, even when plating is used, it is difficult to make the thickness uniform if the metal thickness is large.

Further, the higher the definition of the pixel structure of the liquid crystal element, the smaller the pitch of the metal wiring, and the thicker the metal wiring, the more difficult it is to maintain the viewing angle of the liquid crystal element. There is a limit to increasing the thickness.

In the pressure molding step shown in FIG. 4D, an ultraviolet curable resin is dropped on a mold substrate (or a metal wiring substrate), and a metal wiring substrate (or a mold substrate) is placed thereon.
Then, the ultraviolet-curable resin must be cured by removing the ultraviolet-curable resin by applying pressure until the thickness of the ultraviolet-curable resin layer becomes equal to the thickness of the metal wiring. The time t required for removing the ultraviolet curable resin is a product (η × w) of the viscosity of the ultraviolet curable resin and the square of the substrate size (resin flow width) as shown in the following equation [1].
² ) proportional to pressure and final UV curable resin layer thickness 2
It is inversely proportional to the product of the power (f × h ² ).

T∝ (η × w ² ) / (f × h ² ) [1] η: viscosity of ultraviolet curable resin, w: substrate size (resin flow width), f: pressure, h: final ultraviolet curable Resin layer thickness Accordingly, the longer the viscosity (η) of the resin and the size of the substrate (w), the longer the time (t) of the pressure molding process. The thicker the metal wiring, the higher the pressure (f) The higher (), the shorter the time (t) of the pressure molding process.

Here, the viscosity of the resin is about 20 cps, and the thickness of the metal wiring is 2-3 μm due to restrictions on film formation.
m. When used as a display,
When the substrate size is 500 to 600 mm or more (for example, 850
X650, 550x450, 650x550, etc.). When the calculation is made in consideration of such a point, a time of 40 to 60 minutes per substrate is required only by filling the space between the metal wirings with the resin. It is not practical to use such a process that requires a long time.

Next, the point (b) will be described. FIG.
When the gap between the metal wirings is filled with the ultraviolet curing resin 91 by the method shown in (1), it is not always easy to completely remove the resin 91 from the metal wirings (the surface on the side where the transparent electrode is formed). Therefore, the contact resistance between the metal wiring 90 and the transparent electrode 62 tends to increase, and the contact resistance tends to vary depending on the location.

Finally, the point (c) will be described. When a liquid crystal element is used as a display or the like, it is important to suppress surface reflection in order to improve display quality. The surface reflectance depends on the area occupied by the metal wiring 90 on the liquid crystal element surface, in other words, the aperture ratio of the liquid crystal element.
For example, if the aperture ratio is 40%, the reflectance on the surface of the front protective acrylic plate provided on the display surface side of the liquid crystal element is 7%.
The reflectance on the polarizing plate surface can be estimated to be 3 to 4%, and the reflectance on the metal wiring surface can be estimated to be 10 to 12%.
If the reflection by the front protective acrylic plate is suppressed by non-glare treatment, or if the front protective acrylic plate is not used, the reflectance is reduced accordingly. However, even in this case, reflection by the metal wiring 90 cannot be avoided.
As a result, visibility deteriorates.

A first object of the present invention is to provide an electrode substrate which is excellent in electrical connection between a metal wiring and a transparent electrode and is easy to manufacture, and a liquid crystal element having the same.

A second object of the present invention is to provide an electrode substrate in which deterioration in visibility due to reflection at an interface between a glass substrate and a metal is reduced, and a liquid crystal device having the same.

[0033]

In order to achieve the above object, the present invention provides a light-transmitting substrate, a first dielectric layer formed on the substrate so as to have an uneven shape, and A metal wiring formed to have an uneven shape on the surface of the first dielectric layer, a second dielectric layer arranged to fill a portion where the metal wiring is not formed, and And a transparent electrode formed on the surface of the second dielectric layer so as to be electrically connected.

Further, the present invention provides a light-transmitting substrate, a dielectric layer formed on the substrate so as to have an uneven shape, a metal wiring formed in a concave portion of the dielectric layer, A transparent electrode formed on the convex portion of the dielectric layer so as to be electrically connected to the wiring , and
Fine irregularities are formed in the concave portions, and the fine irregularities are
An object of the present invention is to provide an electrode substrate having the metal wiring formed thereon .

Further, the present invention provides a light-transmitting substrate,
A first invitation formed on the substrate to have an uneven shape;
An electric conductor layer and a surface of the first dielectric layer having an uneven shape
Metal wiring formed as described above and the metal wiring formed
Second dielectric layer arranged to fill the non-existing portion
And the second so as to be electrically connected to the metal wiring.
A transparent electrode formed on the surface of the dielectric layer, and a liquid crystal, and the liquid crystal is driven based on application of a voltage via the metal wiring and the transparent electrode. Is provided.

Further, the present invention provides a light-transmitting substrate, a dielectric layer formed on the substrate so as to have an uneven shape, a metal wiring formed in a concave portion of the dielectric layer, A transparent electrode formed on the projection of the dielectric layer so as to be electrically connected to a wiring, and a liquid crystal, and a voltage is applied through the metal wiring and the transparent electrode. the liquid crystal based is driven, and the concave portion of the dielectric layer
Fine irregularities are formed on the fine irregularities.
An object of the present invention is to provide a liquid crystal element in which metal wiring is formed .

[0037]

[0038]

[0039]

[0040]

[0041]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a schematic cross-sectional view showing an example of an electrode substrate according to a first embodiment of the present invention and a manufacturing process thereof.

FIG. 1F is a schematic sectional view showing an example of the electrode substrate according to the first embodiment of the present invention, in which an ultraviolet curable resin layer (hereinafter, referred to as a UV resin layer) is formed on a glass substrate 13. 12), a metal wiring layer 11, and a transparent electrode 14.

As an ultraviolet curable resin (hereinafter abbreviated as “UV resin”) constituting the UV resin layer 12, U resin having a high light transmittance is used.
V resin can be appropriately selected and used. In particular, in the present embodiment, from the viewpoint of reducing reflection and refraction at the interface between the glass substrate 13 and the UV resin layer 12, the UV resin preferably has a refractive index substantially equal to that of glass used for the glass substrate. Used for Specifically, the difference in the refractive index between the UV resin and the glass is preferably within ± 0.1, more preferably within ± 0.05. For example, as a UV resin, the refractive index is 1.
Acrylic resins of 52 to 1.53 can be suitably used.

The metal constituting the metal wiring layer 11 is as follows.
A low-resistance metal such as chromium, molybdenum, aluminum, copper, a molybdenum-tantalum alloy, or an aluminum-silicon-copper alloy can be used. In addition, the metal wiring layer 1
1 may have a laminated structure of a plurality of metal layers.

The metal wiring layer 11 can be replaced with a low resistance non-metal wiring layer. The resistivity of the metal wiring layer or the non-metal wiring layer is preferably smaller than the resistivity of the transparent electrode 14.

As the transparent electrode 14, indium oxide, tin oxide, indium tin oxide (ITO), or the like is used, and ITO, particularly indium: tin = 85: 15, is used in view of improving light transmittance and increasing resistivity. ~ 97: 3 ITO is preferably used.

The interface between the metal wiring layer 11 and the UV resin layer 12 (ie, the UV on the glass substrate 13 side of the metal wiring layer 11)
The interface with the resin layer 12 has an uneven shape as shown in FIG. Therefore, the light incident on the UV resin layer 12 from the glass substrate side is reflected and scattered in a plurality of directions at the uneven interface between the metal wiring layer 11 and the UV resin layer 12. Therefore, when the electrode substrate according to this embodiment is used for a liquid crystal element, reflection of an external scene due to uniform reflection of external light can be prevented.

Next, an example of a method for manufacturing an electrode substrate according to the present embodiment will be described with reference to FIG.

First, after an uncured UV resin is dropped on the glass substrate 13, ultraviolet rays are irradiated while applying pressure on a mold substrate (not shown) having an uneven surface, as shown in FIG. 1 (a). Next, a first UV resin layer 12 a having an uneven shape on the surface is formed on the glass substrate 13.

Here, before the UV resin is dropped, it is preferable to improve the adhesion between the glass substrate 13 and the first UV resin layer 12a by performing a silane coupling treatment or the like on the glass substrate 13.

By the way, this uneven shape is caused by the metal wiring layer 11.
It is composed of a plurality of planes or curved surfaces having different angles with respect to the glass substrate surface so that light incident from the glass substrate 13 side to the interface between the glass substrate 13 and the UV resin layer 12 is not reflected in one direction. The concavo-convex shape does not necessarily have to be a continuation of the same shape, but is desirably set so as to have a depth step equal to or greater than the wavelength of the incident light.

In FIG. 1A, the valley portion of the uneven shape is in contact with the glass substrate 13 (ie, the thickness of the UV resin layer at the valley portion is set to be substantially zero). ), The valley portion is not necessarily the glass substrate 13
It does not need to be in contact with, or almost in contact with. There is no restriction on the distance between the valley portion of the uneven shape and the surface of the glass substrate 13 (the thickness of the UV resin layer at the valley portion), and it can be set to an arbitrary distance in the production process.

Subsequently, as shown in FIG. 1B, after forming a metal wiring layer 11 on the first UV resin layer 12a, patterning is performed as shown in FIG. 1C.

As a film forming method, a known film forming method such as vacuum evaporation, electron beam evaporation, ion plating, CVD, and sputtering can be used, and it can be appropriately selected according to a metal material to be used.

The patterning method includes etching,
A known patterning method such as photolithography can be used, and it can be appropriately selected according to a metal material to be used, a production process, and the like.

Next, as shown in FIG. 1D, a second UV resin layer 12b is formed so as to fill the portion where the metal wiring layer 11 has been removed. As a method for forming the second UV resin layer, the method shown in FIG. 4 can be used.

Here, the first UV resin layer 12a and the second UV resin layer 12b may be made of the same UV resin.
It is preferable in terms of suppressing refraction and reflection. When the respective UV resin layers 12a and 12b are formed from the same UV resin, there is no distinction between the first UV resin layer 12a and the second UV resin layer 12b, as shown in FIG. ,
The UV resin layer 12 and the metal wiring layer 11 are formed on the glass substrate 13.

Finally, as shown in FIG. 1F, a transparent electrode 14 is formed on the metal wiring layer 11 and the UV resin layer 12. At that time, the transparent electrode 14 must be electrically connected to the metal wiring layer 11.

Similar to the method of forming the metal wiring layer 11, as the method of forming the transparent electrode 14, a known method can be appropriately selected and used.

Thus, an electrode substrate as shown in FIG. 1F can be manufactured.

Next, an example of an electrode substrate according to a second embodiment of the present invention and a manufacturing process thereof will be described with reference to FIG.

FIG. 2F is a schematic sectional view showing an example of the electrode substrate according to the second embodiment of the present invention, in which a UV resin layer 22, a metal wiring layer 25, And a transparent electrode 26 are formed.

For the glass substrate 23, the UV resin layer 22, the metal wiring layer 25, and the transparent electrode 26, the same materials as those used for the electrode substrate shown in FIG. 1F can be used.

The interface between the metal wiring layer 25 and the UV resin layer 22 (ie, the interface between the metal wiring layer 25 and the UV resin layer 22 on the glass substrate 23 side) is not a perfect plane but has minute irregularities. Is preferable from the viewpoint of suppressing reflection of external light.

Next, an example of the method for manufacturing the electrode substrate according to the present embodiment will be described with reference to FIG.

First, as shown in FIG. 2A, after an uncured UV resin is dropped on a glass substrate 23, pressure is applied to a mold substrate 21 having a metal pattern 28 having an uneven shape on the surface of a glass substrate 27. Irradiate with ultraviolet light while adding. afterwards,
As shown in FIG. 2B, the mold substrate 21 is peeled off, and a UV resin layer 22 having a concave portion having the same shape as the metal pattern 28 on the surface is formed on the glass substrate 23. Here, it is preferable to provide fine irregularities on the surface of each metal pattern 28 (the lower surface of the metal pattern 28 in FIG. 2A). The fine unevenness can be provided by a physical or chemical method. Further, the glass substrate 27 and the metal pattern 28 can be replaced with another material.

Here, it is preferable to improve the adhesion between the glass substrate 23 and the UV resin layer 22 by subjecting the glass substrate 23 to a silane coupling treatment or the like before dropping the UV resin. In addition, in order to improve the releasability between the glass substrate 23 and the mold substrate 21, it is preferable that the cross-sectional width of the metal pattern 28 is increased as the distance from the glass substrate 27 increases (as the distance from the glass substrate 27 decreases).

Next, as shown in FIG. 2C, a metal film 24 is formed on the surface of the UV resin layer 22. As the film formation method, a known film formation method can be appropriately used.

Next, the metal film 24 is patterned by using a method such as etching to form a metal wiring layer 25 as shown in FIG. 2D. At this time, the metal wiring layer 25 is formed only in the concave portion of the UV resin layer 22. Further, the surface of the substrate on the UV resin layer side (upper side in the figure) was polished to remove metal burrs, and FIG.
(E). The burrs are formed on the metal film 24.
Is almost eliminated by over-etching, the polishing process can be omitted by performing the etching process for a longer time.

Finally, as shown in FIG.
The transparent electrode 26 is formed. As the formation method, a known film formation method can be appropriately used, as in the first embodiment.

FIG. 3 shows a modification of the second embodiment. In this example, by forming the metal pattern 28 into a pointed shape as shown in FIG. 3B, the bottom surface of the concave portion of the UV resin layer 22 is inclined, and the interface between the metal wiring layer 25 and the UV resin layer 22 is uneven. (Ie, the interface formed by the metal wiring layer 25 and the UV resin layer 22 and closer to the glass substrate 23 is inclined with respect to the surface of the glass substrate 23). I have to).
The other points are the same as in the second embodiment.

On the electrode substrate shown in each of the above embodiments,
After providing an insulating film made of Ta ₂ O ₅ or the like or an alignment film made of polyimide or the like, a plurality of spacer beads or the like are sprayed to adhere the two electrode substrates at a predetermined interval with a sealing material, and a liquid crystal is formed. , A liquid crystal element can be manufactured.

At this time, the electrodes provided on the respective electrode substrates are arranged to face each other in a matrix. As the insulating film, for example, SiO having a thickness of 20 to 300 nm is used.
₂ , a TiO ₂ film, a Ta ₂ O ₅ film, or the like.

As the alignment film, polyimide, polypyrrole, polyvinyl alcohol, polyamide imide, polyester imide, polyparaxylene, polyester, polycarbonate, polyvinyl acetal, polyvinyl chloride, polyamide, polystyrene, polyaniline, cellulose resin, acrylic resin, melamine resin Or an inorganic film such as an obliquely deposited SiO film. Preferably, the alignment film provided on at least one of the electrode substrates has been subjected to a uniaxial alignment treatment such as a rubbing treatment.

As the liquid crystal, a nematic liquid crystal, a chiral smectic liquid crystal or the like is used.

In particular, liquid crystals having two or more stable states or metastable states, specifically, bistable twisted nematic (BTN) liquid crystal, ferroelectric liquid crystal (FLC), antiferroelectric liquid crystal (AFLC), etc. Are preferably used.

The spacer beads have a particle size of 1 to 5 μm.
Silica beads and the like are appropriately used depending on the required electrode substrate spacing. Further, a plurality of bead-shaped adhesives may be sprayed together with the spacer beads.

[0079]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the electrode substrate according to the present invention will be described with reference to specific examples. <Example 1> On a 300 mm x 300 mm glass substrate, a 5% isopropyl alcohol solution of A-174 manufactured by Nippon Unicar Co., Ltd. was spin-coated at 2000 rpm. After that, it is baked at 100 ° C. for 1 hour, UV
It was used as a resin adhesion reinforcing material.

Subsequently, at an environmental temperature of 60 ° C., an acrylic monomer UV resin manufactured by Nippon Kayaku Co., Ltd. was formed on the glass substrate (on the side provided with the adhesion reinforcing material) by spin coating. Thereafter, the mold substrate having a periodic uneven shape under reduced pressure is UV-cured.
While keeping close to the resin layer and keeping the environmental temperature at 60 ° C,
Pressure was applied by applying a load of 8.7 kgf / cm ² for 3 minutes. As the mold substrate, a steel material subjected to chemical nickel plating and its surface polished, and then ridge-shaped unevenness formed by bead grinding was used.

Eighteen seconds after the pressurization was released, exposure was performed by irradiating UV light, energy of 200 J / cm ² was applied, and the UV resin was cured, and the first resin as shown in FIG. A UV resin layer was formed.

Then, on the substrate on which the first UV resin layer was formed, Mo was 100 nm, A1 was 1700 nm, and
O was sequentially formed into a film having a thickness of 200 nm by sputtering and laminated, and a pattern was formed using a mixed acid to form a metal wiring layer.

Subsequently, after forming a second UV resin layer by the method shown in FIG. 4, an ITO film is formed to a thickness of about 150 nm by a sputtering method, and is patterned by a photolithographic method to form an electrode substrate. did.

In the electrode substrate and the liquid crystal element using the same, the incident light from the glass substrate is reflected and scattered in a plurality of different directions at the interface between the metal wiring layer and the UV resin layer. , It was possible to prevent reflection of external scenes. <Example 2> Mo-Ti alloy (Ti content 12.5%)
Was formed on a glass substrate to a thickness of 100 nm, and A1 was formed thereon to a thickness of 1900 nm to form a laminated film. At that time, a fine uneven shape was formed on the surface of A1 by using a bite grinding. Subsequently, the Mo—Ti alloy and A1 were patterned using a mixed acid to form a mold substrate as shown in FIG. Here, the Mo—Ti alloy has high adhesion to a glass substrate, and A1 has a high etching rate.

Next, as in the first embodiment, 300 mm × 30
A-174 manufactured by Nippon Unicar Co., Ltd. on a 0 mm glass substrate
5% isopropyl alcohol solution at 2000 rpm
Spin coating was performed at a rotation / min. Then, it baked at 100 degreeC for 1 hour, and was set as the adhesion reinforcement of UV resin.

Subsequently, an acrylic monomer UV resin manufactured by Nippon Kayaku Co., Ltd. was formed on the glass substrate (on the side provided with the adhesion reinforcing material) by spin coating at an environmental temperature of 60 ° C.

Then, as shown in FIG. 2A, the mold substrate is brought into close contact with the UV resin, pressed for about 10 minutes, exposed by irradiating UV light, and given an energy of 200 J / cm ² , After curing the UV resin, the mold substrate was peeled off.
At that time, the thickness of the UV resin layer was about 0.1 mm.

Next, Mo was coated on the UV resin to a thickness of 100 nm.
A1 was formed to a thickness of 1500 nm and Mo was formed to a thickness of 200 nm sequentially by a sputtering method to form a metal film as shown in FIG. 2C.

Subsequently, a metal wiring pattern was formed using a mixed acid such that the metal film remained in the concave portion formed in the resin layer. Then, the metal (burrs) protruding from the concave portions was removed by a polishing treatment.

Finally, an electrode substrate as shown in FIG. 2F was formed by patterning ITO in the same manner as in Example 1.

As described above, since the UV resin layer is not formed on the metal wiring layer by forming the metal wiring layer after the UV resin layer, the thickness of the UV resin layer can be set arbitrarily. The time for the pressurization step could be greatly reduced, and the manufacture of the electrode substrate could be facilitated. Specifically, the time of the pressing step, which required 40 minutes in the conventional example, is now 10 minutes. Further, by providing minute irregularities at the interface between the metal wiring layer and the UV resin layer, reflection of an external scene could be prevented. Example 3 An electrode substrate was prepared in the same manner as in Example 2. However, periodic unevenness was formed on the surface of the metal film by subjecting the metal film of the mold substrate to bite processing. The cutting depth of the metal film was about 1 μm. The cutting tool was a diamond cutting tool and the tip angle was set to 45 °. The period of the unevenness is about 2 μm. In this manner, a mold substrate as shown in FIG. 3 was prepared, and an electrode substrate as shown in FIG.

In this embodiment, as in the second embodiment, the effects of shortening the pressurizing time and preventing reflection of an external scene were obtained.

[0093]

As described above, according to the electrode substrate of the present invention and the liquid crystal element using the electrode substrate, a light-transmitting property is obtained.
Providing a first dielectric layer between the substrate to be formed and the metal wiring;
By making the dielectric layer and the metal wiring uneven , it is possible to prevent reflection of ambient light due to reflection of the metal wiring on the surface on the substrate side. Further, by providing a selectively perforated dielectric layer on the translucent substrate and forming a metal wiring thereon, it is possible to easily manufacture the electrode substrate.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view illustrating an example of an electrode substrate according to the present invention and an example of a manufacturing process thereof.

FIG. 2 is a schematic cross-sectional view showing another example of the electrode substrate according to the present invention and an example of a manufacturing process thereof.

FIG. 3 is a schematic cross-sectional view illustrating another example of the electrode substrate according to the present invention and an example of a manufacturing process thereof.

FIG. 4 is a schematic cross-sectional view showing a method for manufacturing an electrode substrate.

5A is a schematic sectional view showing a general simple matrix type liquid crystal element, and FIG. 5B is a schematic plan view showing an electrode substrate used for a general simple matrix type liquid crystal element. It is.

[Explanation of symbols]

 Reference Signs List 6 liquid crystal 11 metal wiring layer 12 UV resin layer 12a first UV resin layer 12b second UV resin layer 13 glass substrate 14 transparent electrode 21 type substrate 22 UV resin layer 23 glass substrate 24 metal film 25 metal wiring layer 26 transparent electrode Reference Signs List 27 glass substrate 28 metal pattern of uneven shape 61 glass substrate 62 transparent electrode 63 insulating film 64 alignment film 65 sealing material 81, 82 electrode substrate

Continuation of the front page (56) References JP-A-7-218906 (JP, A) JP-A-5-72536 (JP, A) JP-A-6-75238 (JP, A) JP-A-6-260645 (JP) , A) JP-A-7-106586 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) G02F 1/1343 G02F 1/1333 G02F 1/1362 G02F 1/133 H01L 29/78

Claims (8)

(57) [Claims] 1. A substrate having a light-transmitting property, a first dielectric layer formed on the substrate to have an uneven shape, and an uneven surface formed on the surface of the first dielectric layer. The formed metal wiring, a second dielectric layer arranged to fill a portion where the metal wiring is not formed, and the second dielectric layer so as to be electrically connected to the metal wiring. A transparent electrode formed on the surface of the electrode substrate. 2. The electrode substrate according to claim 1 , wherein said dielectric layer is made of an organic resin. 3. The electrode substrate according to claim 2 , wherein said organic resin is a photocurable resin. 4. A substrate having a light-transmitting property, a dielectric layer formed on the substrate to have an uneven shape, a metal wiring formed in a concave portion of the dielectric layer, and an electric A transparent electrode formed on the convex portion of the dielectric layer so as to be electrically connected , and fine concaves and convexes are formed in the concave portion of the dielectric layer.
Characterized in that the metal wiring is formed in the uneven portion,
Electrode substrate. 5. A substrate having a light-transmitting property and irregularities formed on the substrate.
A first dielectric layer formed to have a shape;
The surface of the first dielectric layer is formed to have an uneven shape.
Buried metal wiring and the part where the metal wiring is not formed.
A second dielectric layer disposed to
Surface of the second dielectric layer so as to be electrically connected to
A liquid crystal device comprising: a transparent electrode formed on a substrate; and a liquid crystal, wherein the liquid crystal is driven based on application of a voltage through the metal wiring and the transparent electrode. 6. A substrate having a light-transmitting property, and irregularities formed on the substrate.
A dielectric layer formed to have a shape, and the dielectric layer
Metal wiring formed in the recessed portion, and electrically connected to the metal wiring
Transparent formed on the protrusion of the dielectric layer so as to be connected
An electrode, a liquid crystal, and the metal wiring and the
When a voltage is applied through a transparent electrode, the liquid crystal
Is driven,And, Fine irregularities are formed in the concave portions of the dielectric layer, and the minute irregularities are formed.
The metal on the uneven part Wiring is formed, Characterized by
Liquid crystal element. 7. The liquid crystal device according to claim 6 , wherein the liquid crystal is a chiral smectic liquid crystal. 8. The liquid crystal device according to claim 7 , wherein the liquid crystal is a ferroelectric liquid crystal.