JP3994573B2 - Material for organic electroluminescence device and organic electroluminescence device using the same - Google Patents
Material for organic electroluminescence device and organic electroluminescence device using the same Download PDFInfo
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- JP3994573B2 JP3994573B2 JP10348899A JP10348899A JP3994573B2 JP 3994573 B2 JP3994573 B2 JP 3994573B2 JP 10348899 A JP10348899 A JP 10348899A JP 10348899 A JP10348899 A JP 10348899A JP 3994573 B2 JP3994573 B2 JP 3994573B2
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- light emitting
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- 239000000463 material Substances 0.000 title claims description 86
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- 125000005581 pyrene group Chemical group 0.000 description 1
- 125000002098 pyridazinyl group Chemical group 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 125000000714 pyrimidinyl group Chemical group 0.000 description 1
- 125000001422 pyrrolinyl group Chemical group 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 125000002294 quinazolinyl group Chemical group N1=C(N=CC2=CC=CC=C12)* 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 125000005493 quinolyl group Chemical group 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003388 sodium compounds Chemical class 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000003512 tertiary amines Chemical group 0.000 description 1
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 1
- 125000001113 thiadiazolyl group Chemical group 0.000 description 1
- 125000000335 thiazolyl group Chemical group 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- NZFNXWQNBYZDAQ-UHFFFAOYSA-N thioridazine hydrochloride Chemical compound Cl.C12=CC(SC)=CC=C2SC2=CC=CC=C2N1CCC1CCCCN1C NZFNXWQNBYZDAQ-UHFFFAOYSA-N 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- KWQNQSDKCINQQP-UHFFFAOYSA-K tri(quinolin-8-yloxy)gallane Chemical compound C1=CN=C2C(O[Ga](OC=3C4=NC=CC=C4C=CC=3)OC=3C4=NC=CC=C4C=CC=3)=CC=CC2=C1 KWQNQSDKCINQQP-UHFFFAOYSA-K 0.000 description 1
- 125000004306 triazinyl group Chemical group 0.000 description 1
- 125000001425 triazolyl group Chemical group 0.000 description 1
- CATVHUNBFWPEKR-UHFFFAOYSA-N triphenylen-1-ol Chemical group C1=CC=CC2=C3C(O)=CC=CC3=C(C=CC=C3)C3=C21 CATVHUNBFWPEKR-UHFFFAOYSA-N 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- VHBFFQKBGNRLFZ-UHFFFAOYSA-N vitamin p Natural products O1C2=CC=CC=C2C(=O)C=C1C1=CC=CC=C1 VHBFFQKBGNRLFZ-UHFFFAOYSA-N 0.000 description 1
- 125000001834 xanthenyl group Chemical group C1=CC=CC=2OC3=CC=CC=C3C(C12)* 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- CJGUQZGGEUNPFQ-UHFFFAOYSA-L zinc;2-(1,3-benzothiazol-2-yl)phenolate Chemical compound [Zn+2].[O-]C1=CC=CC=C1C1=NC2=CC=CC=C2S1.[O-]C1=CC=CC=C1C1=NC2=CC=CC=C2S1 CJGUQZGGEUNPFQ-UHFFFAOYSA-L 0.000 description 1
- BRODZLXTYKNNPW-UHFFFAOYSA-L zinc;2-(benzotriazol-2-yl)phenolate Chemical compound [Zn+2].[O-]C1=CC=CC=C1N1N=C2C=CC=CC2=N1.[O-]C1=CC=CC=C1N1N=C2C=CC=CC2=N1 BRODZLXTYKNNPW-UHFFFAOYSA-L 0.000 description 1
- NVCBVYYESHBQKS-UHFFFAOYSA-L zinc;2-carboxyquinolin-8-olate Chemical compound [Zn+2].C1=C(C([O-])=O)N=C2C(O)=CC=CC2=C1.C1=C(C([O-])=O)N=C2C(O)=CC=CC2=C1 NVCBVYYESHBQKS-UHFFFAOYSA-L 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/361—Polynuclear complexes, i.e. complexes comprising two or more metal centers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/658—Organoboranes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/326—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising gallium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
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- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Optics & Photonics (AREA)
- High Energy & Nuclear Physics (AREA)
- Inorganic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
Description
【0001】
【産業上の利用分野】
本発明は平面光源や表示に使用される有機エレクトロルミネッセンス(EL)素子用発光材料および高輝度の発光素子に関するものである。
【0002】
【従来の技術】
有機物質を使用したEL素子は、固体発光型の安価な大面積フルカラー表示素子としての用途が有望視され、多くの開発が行われている。一般にEL素子は、発光層および該層をはさんだ一対の対向電極から構成されている。発光は、両電極間に電界が印加されると、陰極側から電子が注入され、陽極側から正孔が注入され、電子が発光層において正孔と再結合し、エネルギー準位が伝導帯から価電子帯に戻る際にエネルギーを光として放出する現象である。
【0003】
従来の有機EL素子は、無機EL素子に比べて駆動電圧が高く、発光輝度や発光効率も低かった。また、特性劣化も著しく実用化には至っていなかった。
近年、10V以下の低電圧で発光する高い蛍光量子効率を持った有機化合物を含有した薄膜を積層した有機EL素子が報告され、関心を集めている(アプライド・フィジクス・レターズ、51巻、913ページ、1987年参照)。この方法は、金属キレート錯体を発光層、アミン系化合物を正孔注入層に使用して、高輝度の緑色発光を得ており、6〜7Vの直流電圧で輝度は数1000cd/m2、 最大発光効率は1.5lm/Wを達成して、実用領域に近い性能を持っている 。
【0004】
しかしながら、現在までの有機EL素子は、構成の改善により発光強度は改良されているが、未だ充分な発光輝度は有していない。また、繰り返し使用時の安定性に劣るという大きな問題を持っている。これは、例えば、トリス(8−ヒドロキシキノリナート)アルミニウム錯体等の金属キレート錯体が、電界発光時に化学的に不安定であり、陰極との密着性も悪く、短時間の発光で大きく劣化していた。以上の理由により、高い発光輝度、発光効率を持ち、繰り返し使用時での安定性の優れた有機EL素子の開発のために、優れた発光能力を有し、耐久性のある発光材料の開発が望まれている。
【0005】
【発明が解決しようとする課題】
本発明は、発光輝度が高く、繰り返し使用時での安定性の優れた有機EL素子の提供にある。本発明者らが鋭意検討した結果、一般式[1]で示される有機EL素子用材料を使用した有機EL素子の発光輝度および発光効率が高く、繰り返し使用時での安定性も優れていることを見いだし本発明を成すに至った。
【0006】
【課題を解決するための手段】
本発明は、下記一般式[1]で示される有機エレクトロルミネッセンス素子用材料に関する。
一般式[1]
【化2】
[式中、Bはホウ素原子を表し、Aは3〜15価の基を表す。Ar1およびAr2は、それぞれ独立に、置換もしくは未置換のアルキル基、置換もしくは未置換の単環基、置換もしくは未置換の縮合多環基を表し、Ar1とAr2とは、互いに結合して一体となっても良い 。ただし、A、Ar1またはAr2の少なくとも1つは、芳香環または複素芳香環を含む。]
【0007】
また本発明は、Aが、3〜15価の単環基、3〜15価の縮合多環基、または、単環もしくは縮合多環を含む芳香環構造単位2〜15個が直接連結した、もしくは炭素、水素、酸素、窒素、硫黄原子からなる非芳香環構造単位を介して連結した3〜15価の基である上記有機エレクトロルミネッセンス素子用材料に関する。
【0008】
また本発明は、Aが、3価の基であることを特徴とする上記有機エレクトロルミネッセンス素子用材料に関する。
【0009】
また本発明は、Ar1〜Ar2が置換もしくは未置換の単環アリール基であることを特徴とする上記有機エレクトロルミネッセンス素子用材料に関する。
【0010】
また本発明は、一対の電極間に発光層または発光層を含む複数層の有機化合物薄膜を形成してなる有機エレクトロルミネッセンス素子において、前記いずれかの層が、上記有機エレクトロルミネッセンス素子用材料を単独もしくは混合物として含有することを特徴とする有機エレクトロルミネッセンス素子に関する。
【0011】
また本発明は、一対の電極間に発光層または発光層を含む複数層の有機化合物薄膜を形成してなる有機エレクトロルミネッセンス素子において、前記発光層が上記有機エレクトロルミネッセンス素子用材料を単独もしくは混合物として含有することを特徴とする有機エレクトロルミネッセンス素子に関するに関する。
【0012】
また本発明は、一対の電極間に発光層または発光層を含む複数層の有機化合物薄膜を形成してなる有機エレクトロルミネッセンス素子において、前記電子注入層が上記有機エレクトロルミネッセンス素子用材料を単独もしくは混合物として含有することを特徴とする有機エレクトロルミネッセンス素子に関する。
【0013】
さらに本発明は、、陽極と発光層との間に正孔注入層を形成することを特徴とする上記の有機エレクトロルミネッセンス素子。
【0014】
また本発明は、正孔注入層が、アリールアミン誘導体、フタロシアニン化合物、およびトリフェニレン誘導体からなる群から選ばれる少なくとも1種を含有する層であることを特徴とする上記の有機エレクトロルミネッセンス素子に関する。
【0015】
【発明の実施の形態】
本発明における一般式[1]で示される化合物のAは、3〜15価の基である。好ましくは、3〜15価の単環基、3〜15価の縮合多環基、または、単環もしくは縮合多環を含む芳香環構造単位2〜15個が直接連結した、もしくは炭素、水素、酸素、窒素、硫黄原子からなる非芳香環構造単位を介して連結した3〜15価の基である。
【0016】
本発明の置換もしくは未置換の単環基としては、単環シクロアルキル基、単環アリール基、単環複素環基等がある。
単環シクロアルキル基としては、シクロブチル基、シクロペンチル基、シクロヘキシル基、シクロヘプチル基、シクロオクチル基等の炭素数4〜8のシクロアルキル基がある。
単環アリール基としては、フェニル基がある。
単環複素環基としては、チエニル基、チオフェニル基、フリル基、ピロリル基、イミダゾリル基、ピラゾリル基、ピリジニル基、ピラジニル基、ピリミジニル基、ピリダジニル基、トリアジニル基、トリアゾリル基、オキサゾリル基、チアゾリル基、オキサジアゾリル基、チアジアゾリル基、イミダジアゾリル基等がある。
【0017】
置換もしくは未置換の縮合多環基としては、縮合多環アリール基、縮合多環複素環基、縮合多環シクロアルキル基等がある。
縮合多環アリール基としては、ナフチル基、アントラニル基、フェナントレニル基、フルオレニル基、アセナフチル基、アズレニル基、ヘプタレニル基、アセナフチレニル基、ピレニル基、ペリレニル基、トリフェニレル基等がある。
【0018】
縮合多環複素環基としては、インドリル基、キノリル基、イソキノリル基、フタラジニル基、キノキサリニル基、キナゾリニル基、カルバゾリル基、アクリジニル基、フェナジニル基、フルフリル基、イソチアゾリル基、イソキサゾリル基、フラザニル基、フェノキサジニル基、ベンゾチアゾリル基、ベンゾオキサゾリル基、ベンズイミダゾリル、ベンゾトリアゾリル基、プラニル基等がある。その他の縮合多環基として、1−テトラリル基、2−テトラリル基、テトラヒドロキノリル基等がある。
【0019】
また、本発明のAとして、上記単環基または縮合多環基が直接連結した3〜15価の基が挙げられる。
さらに、本発明のAとして、上記単環基または縮合多環基が、炭素原子、水素原子、酸素原子、窒素原子、硫黄原子からなる非芳香環構造単位を介して連結した3〜15価の基がある。
炭素原子、水素原子、酸素原子、窒素原子、硫黄原子からなる非芳香環構造単位は、2価以上であり、直線状、分岐状または環状であり、芳香環を含まないものである。好ましくは、原子数1〜40個である。非芳香環構造単位を例示するならば、酸素原子、硫黄原子の他、アルキル基、アルキレン基、アルキルオキシ基、アルキルチオ基、シクロアルキル基、アミノ基、アルキルアミノ基などの2価以上の残基が例示できる。
芳香環構造単位が直接または非芳香環構造単位を介して結合する場合には、芳香環構造単位の数は2〜10個であり、2カ所以上でそれぞれ結合する場合もあり得る。さらに、芳香環構造単位は、少なくとも1つが縮合芳香環または縮合複素芳香環であればよく、単環と縮合環との間の結合もあり得る。
芳香環構造単位は、アルキル基などで置換されていても良い。また、ホウ素原子は、芳香環構造単位と結合していることが好ましい。
【0020】
Aの具体例は、ベンゼン、トルエン、キシレン、エチルベンゼン、ナフタレン、アントラセン、フェナントレン、フルオレン、ピレン、クリセン、ナフタセン、ペリレン、トリフェニレン、アズレン、フルオレノン、アントラキノン、ジベンゾスベレノン、テトラシアノキノジメタン等の置換もしくは未置換の芳香族環もしくは縮合芳香環の残基、
フラン、チオフェン、ピロール、ピリジン、ピロン、オキサゾール、ピラジン、ピリミジン、メラミン、オキサジアゾール、トリアゾール、チアジアゾール、インドール、キノリン、イソキノリン、カルバゾール、アクリジン、チオキサントン、クマリン、アクリドン、ジフェニレンスルホン、キノキサリン、ベンゾチアゾール、フェナジン、フェナントロリン、フェノチアジン、キナクリドン、フラバンスロン、インダンスロン等の複素芳香環もしくは縮合複素芳香環の残基、
【0021】
さらには、ビフェニル、ターフェニル、ビナフチル、トリフェニルベンゼン、ジフェニルアントラセン、ルブレン、ビフルオレニリデン、ビピリジン、ビキノリン、フラボン、フェニルトリアジン、ビスベンゾチアゾール、ビチオフェン、フェニルベンゾトリアゾール、フェニルベンズイミダゾール、フェニルアクリジン、ビス(ベンゾオキサゾリル)チオフェン、ビス(フェニルオキサゾリル)ベンゼン、ビフェニリルフェニルオキサジアゾール、ジフェニルベンゾキノン、ジフェニルイソベンゾフラン、ジフェニルピリジンなどの芳香環構造単位同士が直接連結した残基、
【0022】
スチルベン、ジベンジル、ジフェニルメタン、ビス(フェニルイソプロピル)ベンゼン、ジフェニルフルオレン、ジフェニルヘキサフルオロプロパン、ジベンジルナフチルケトン、ジベンジリデンシクロヘキサノン、ジスチリルナフタレン、(フェニルエチル)ベンジルナフタレン、ジフェニルエーテル、メチルジフェニルアミン、ベンゾフェノン、安息香酸フェニル、ジフェニル尿素、ジフェニルスルフィド、ジフェニルスルホン、ジフェノキシビフェニル、ビス(フェノキシフェニル)スルホン、ビス(フェノキシフェニル)プロパン、ジフェノキシベンゼン、エチレングリコールジフェニルエーテル、ネオペンチルグリコールジフェニルエーテル、ジピコリルアミン、ジピリジルアミン、ヘキサヒドロトリフェニルトリアジン、トリピリジルトリアジン、トリフェニルアミン、トリス(ジフェニルアミノ)ベンゼン等の芳香環構造単位同士が、非芳香環構造単位を介して連結した骨格を有する化合物の残基である。
【0023】
合成の面から、Aが3価の基が好ましく、その具体例は、ベンゼン、1,3,5−トリフェニルベンゼン、1,3,5−トリフェニルトリアジン、1,3,5−トリス(ビフェニル)ベンゼン、トリフェニルアミン、トリス(ビフェニル)アミン等の3価の残基がある。
【0024】
以下に、本発明の一般式[1]の化合物のAの構造の代表例を、表1に具体的に例示するが、本発明は、この代表例に限定されるものではない。
【0025】
【表1】
【0026】
【0027】
【0028】
【0029】
【0030】
【0031】
【0032】
本発明における一般式[1]で示される化合物のAr1およびAr2は、それぞれ独立に、置換もしくは未置換のアルキル基、置換もしくは未置換の単環基、置換もしくは未置換の縮合多環基を表す。単環基、縮合多環基については、Aの説明で列記したものを再び例示できる。
置換もしくは未置換のアルキル基としては、置換もしくは未置換のアルキル基としては、メチル基、エチル基、プロピル基、ブチル基、sec−ブチル基、tert−ブチル基、ペンチル基、ヘキシル基、ヘプチル基、オクチル基、ステアリル基、2−フェニルイソプロピル基、トリクロロメチル基、トリフルオロメチル基、ベンジル基、α−フェノキシベンジル基、α,α−ジメチルベンジル基、α,α−メチルフェニルベンジル基、α,α−ジトリフルオロメチルベンジル基、トリフェニルメチル基、α−ベンジルオキシベンジル基等の炭素数1〜30のアルキル基の置換基がある。
【0033】
Ar1とAr2とは、互いに結合して一体となっても良く、ピロリジン環、ジオキソラン環、ピラゾリジン環、ピペリジン環、ジオキサン環、モルフォリン環、ピペラジン環、トリチアン環等および上記芳香族複素環が結合されて形成される。
【0034】
Ar1およびAr2は、単環アリール基であることが好ましく、また、Aが芳香環構造を有しないときは、少なくともAr1およびAr2のいずれかは芳香環構造であることが好ましい。一般式[1]にはn個のホウ素原子が存在するが、製造の過程などで、それぞれのホウ素原子のAr1およびAr2は、必ずしも同一ではない。また、一般式[1]の材料は、2種以上混合物であってもよい。
【0035】
A、Ar1、Ar2の有する置換基の具体例は、ハロゲン原子としては弗素、塩素、臭素、ヨウ素、置換もしくは未置換のアルキル基としては、メチル基、エチル基、プロピル基、ブチル基、sec−ブチル基、tert−ブチル基、ペンチル基、ヘキシル基、ヘプチル基、オクチル基、ステアリル基、2−フェニルイソプロピル基、トリクロロメチル基、トリフルオロメチル基、ベンジル基、α−フェノキシベンジル基、α,α−ジメチルベンジル基、α,α−メチルフェニルベンジル基、α,α−ジトリフルオロメチルベンジル基、トリフェニルメチル基、α−ベンジルオキシベンジル基等がある。置換もしくは未置換のアルコキシル基としては、メトキシ基、エトキシ基、プロポキシ基、n−ブトキシ基、t−ブトキシ基、n−オクチルオキシ基、t−オクチルオキシ基、1,1,1−テトラフルオロエトキシ基、フェノキシ基、ベンジルオキシ基、オクチルフェノキシ基等がある。置換もしくは未置換のアリール基としては、フェニル基、2−メチルフェニル基、3−メチルフェニル基、4−メチルフェニル基、4−エチルフェニル基、ビフェニル基、4−メチルビフェニル基、4−エチルビフェニル基、4−シクロヘキシルビフェニル基ターフェニル基、3,5−ジクロロフェニル基、ナフチル基、5−メチルナフチル基、アントリル基、ピレニル基等がある。置換もしくは未置換のアミノ基としては、アミノ基、ジメチルアミノ基、ジエチルアミノ基、フェニルメチルアミノ基、ジフェニルアミノ基、ジトリルアミノ基、ジベンジルアミノ基等がある。また、隣接する置換基同士で、それぞれ互いに結合して、置換もしくは未置換の、シクロペンテン環、シクロヘキセン環、フェニル環、ナフタレン環、アントラセン環、ピレン環、フルオレン環、フラン環、チオフェン環、ピロール環、オキサゾール環、チアゾール環、イミダゾール環、ピリジン環、ピラジン環、ピロリン環、ピラゾリン環、インドール環、キノリン環、キノキサリン環、キサンテン環、カルバゾール環、アクリジン環、フェナントロリン環等を新たに形成しても良い。
【0036】
以下に、本発明の一般式[1]のAr1およびAr2の代表例を、表2に具体的に例示するが、本発明は、この代表例に限定されるものではない。
【0037】
【表2】
【0038】
【0039】
【0040】
本発明における化合物はホウ素原子を導入することにより、また、3価以上のAを導入することにより、ガラス転移点や融点が高くなる。このため、電界発光時における有機層中、有機層間もしくは、有機層と金属電極間で発生するジュール熱に対する耐性(耐熱性)が向上するので、有機EL素子材料として使用した場合、高い発光輝度を示し、長時間発光させる際にも有利である。
【0041】
本発明の一般式[1]で示される化合物の一般的な合成方法を以下に示す。一般式[1]のAに当たる3〜15価の残基のリチウム化合物と、Ar1およびA r2、フッ素とを有するホウ素誘導体を、テトラヒドルフラン溶媒中で反応させ て、一般式[1]の化合物を合成することができる。一般式[1]のAに当たる3〜15価の残基のリチウム化合物に代えて当該残基のナトリウム化合物から合成できるものもある。溶媒は、ジエチルエーテル、石油エーテル、またはヘキサンがある。以上の合成法は一例であり、特に限定されるものではない。
【0042】
以下に、本発明の一般式[1]の化合物の代表例を、表3に具体的に例示するが、本発明は、この代表例に限定されるものではない。
【0043】
【表3】
【0044】
【0045】
【0046】
【0047】
【0048】
【0049】
【0050】
【0051】
本発明の一般式[1]で示される化合物は、固体状態において強い蛍光を持つ化合物であり電場発光性にも優れている。また、金属電極からの優れた電子注入性および電子輸送性を併せて持ち合わせているので、発光材料として有効に使用することができ、更には、他の正孔輸送性材料、電子輸送性材料もしくはドーピング材料を使用してもさしつかえない。
【0052】
有機EL素子は、陽極と陰極間に一層もしくは多層の有機薄膜を形成した素子である。一層型の場合、陽極と陰極との間に発光層を設けている。発光層は、発光材料を含有し、それに加えて陽極から注入した正孔、もしくは陰極から注入した電子を発光材料まで輸送させるために、正孔注入材料もしくは電子注入材料を含有しても良い。しかしながら、本発明の発光材料は、極めて高い発光量子効率、高い正孔輸送能力および電子輸送能力を併せ持ち、均一な薄膜を形成することができるので、本発明の発光材料のみで発光層を形成することも可能である。多層型は、(陽極/正孔注入帯域/発光層/陰極)、(陽極/発光層/電子注入帯域/陰極)、(陽極/正孔注入帯域/発光層/電子注入帯域/陰極)の多層構成で積層した有機EL素子がある。一般式[1]の化合物は、高い発光特性を持ち、正孔注入性、正孔輸送特性および電子注入性、電子輸送特性をもっているので、発光材料として発光層に使用できる。
【0053】
発光層には、必要があれば、本発明の一般式[1]の化合物に加えて、さらなる公知の発光材料、ドーピング材料、正孔注入材料や電子注入材料を使用することもできる。有機EL素子は、多層構造にすることにより、クエンチングによる輝度や寿命の低下を防ぐことができる。必要があれば、発光材料、ドーピング材料、正孔注入材料や電子注入材料を組み合わせて使用することが出来る。また、ドーピング材料により、発光輝度や発光効率の向上、赤色や青色の発光を得ることもできる。また、正孔注入帯域、発光層、電子注入帯域は、それぞれ二層以上の層構成により形成されても良い。その際には、正孔注入帯域の場合、電極から正孔を注入する層を正孔注入層、正孔注入層から正孔を受け取り発光層まで正孔を輸送する層を正孔輸送層と呼ぶ。同様に、電子注入帯域の場合、電極から電子を注入する層を電子注入層、電子注入層から電子を受け取り発光層まで電子を輸送する層を電子輸送層と呼ぶ。これらの各層は、材料のエネルギー準位、耐熱性、有機層もしくは金属電極との密着性等の各要因により選択されて使用される。
【0054】
一般式[1]の化合物と共に発光層に使用できる発光材料またはドーピング材料としては、アントラセン、ナフタレン、フェナントレン、ピレン、テトラセン、コロネン、クリセン、フルオレセイン、ペリレン、フタロペリレン、ナフタロペリレン、ペリノン、フタロペリノン、ナフタロペリノン、ジフェニルブタジエン、テトラフェニルブタジエン、クマリン、オキサジアゾール、アルダジン、ビスベンゾキサゾリン、ビススチリル、ピラジン、シクロペンタジエン、キノリン金属錯体、アミノキノリン金属錯体、ベンゾキノリン金属錯体、イミン、ジフェニルエチレン、ビニルアントラセン、ジアミノカルバゾール、ピラン、チオピラン、ポリメチン、メロシアニン、イミダゾールキレート化オキシノイド化合物、キナクリドン、ルブレンおよび色素レーザー用や増白用の蛍光色素等があるが、これらに限定されるものではない。
【0055】
一般式[1]の化合物および共に発光層に使用できる上記の化合物の発光層中での存在比率はどれが主成分であってもよい。つまり、上記の化合物および本発明における化合物のそれぞれの組み合わせにより、本発明における化合物は発光層を形成する主材料にも他の主材料中へのドーピンク材料にも成り得る。
【0056】
正孔注入材料としては、正孔を輸送する能力を持ち、陽極からの正孔注入効果、発光層または発光材料に対して優れた正孔注入効果を有し、発光層で生成した励起子の電子注入帯域または電子注入材料への移動を防止し、かつ薄膜形成能力の優れた化合物が挙げられる。具体的には、フタロシアニン誘導体、ナフタロシアニン誘導体、ポルフィリン誘導体、オキサゾール、オキサジアゾール、トリアゾール、イミダゾール、イミダゾロン、イミダゾールチオン、ピラゾリン、ピラゾロン、テトラヒドロイミダゾール、オキサゾール、オキサジアゾール、ヒドラゾン、アシルヒドラゾン、ポリアリールアルカン、スチルベン、ブタジエン、ベンジジン型トリフェニルアミン、スチリルアミン型トリフェニルアミン、ジアミン型トリフェニルアミン等と、それらの誘導体、およびポリビニルカルバゾール、ポリシラン、導電性高分子等の高分子材料等があるが、これらに限定されるものではない。
【0057】
本発明の有機EL素子において使用できる正孔注入材料の中で、さらに効果的な正孔注入材料は、アリールアミン誘導体、フタロシアニン化合物ないしはトリフェニレン誘導体である。アリールアミン誘導体の具体例としては、トリフェニルアミン、トリトリルアミン、トリルジフェニルアミン、N,N’−ジフェニル−N,N’−ジ−m−トリル−4,4’−ビフェニルジアミン、N,N,N’,N’−テトラ(p−トリル)−p−フェニレンジアミン、N,N,N’,N’−テトラ−p−トリル−4,4’−ビフェニルジアミン、N,N’−ジフェニル−N,N’−ジ(1−ナフチル)−4,4’−ビフェニルジアミン、N,N’−ジ(4−n−ブチルフェニル)−N,N’−ジ−p−トリル−9,10−フェナントレンジアミン、4,4’,4”−トリス(N−フェニル−N−m−トリルアミノ)トリフェニルアミン、1,1−ビス[4−(ジ−p−トリルアミノ)フェニル]シクロヘキサン等、もしくはこれらの芳香族三級アミン骨格を有したオリゴマーもしくはポリマー等があるが、これらに限定されるものではない。
【0058】
フタロシアニン(Pc)化合物の具体例としては、H2Pc、CuPc、C oPc、NiPc、ZnPc、PdPc、FePc、MnPc、ClAlPc、ClGaPc、ClInPc、ClSnPc、Cl2SiPc、(HO)A lPc、(HO)GaPc、VOPc、TiOPc、MoOPc、GaPc−O−GaPc等のフタロシアニン誘導体およびナフタロシアニン誘導体等があるが、これらに限定されるものではない。
【0059】
トリフェニレン誘導体の具体例としては、ヘキサメトキシトリフェニレン、ヘキサエトキシトリフェニレン、ヘキサヘキシルオキシトリフェニレン、ヘキサベンジルオキシトリフェニレン、トリメチレンジオキシトリフェニレン、トリエチレンジオキシトリフェニレンなどのヘキサアルコキシトリフェニレン類、ヘキサフェノキシトリフェニレン、ヘキサナフチルオキシトリフェニレン、ヘキサビフェニリルオキシトリフェニレン、トリフェニレンジオキシトリフェニレンなどのヘキサアリールオキシトリフェニレン類、ヘキサアセトキシトリフェニレン、ヘキサベンゾイルオキシトリフェニレンなどのヘキサアシロキシトリフェニレン類等があるが、これらに限定されるものではない。
【0060】
電子注入材料としては、電子を輸送する能力を持ち、陰極からの正孔注入効果、発光層または発光材料に対して優れた電子注入効果を有し、発光層で生成した励起子の正孔注入帯域への移動を防止し、かつ薄膜形成能力の優れた化合物が挙げられる。例えば、フルオレノン、アントラキノジメタン、ジフェノキノン、チオピランジオキシド、オキサゾール、オキサジアゾール、トリアゾール、イミダゾール、ペリレンテトラカルボン酸、フレオレニリデンメタン、アントラキノジメタン、アントロン等とそれらの誘導体があるが、これらに限定されるものではない。また、正孔注入材料に電子受容物質を、電子注入材料に電子供与性物質を添加することにより増感させることもできる。
【0061】
本発明の有機EL素子において、さらに効果的な電子注入材料は、金属錯体化合物もしくは含窒素五員環誘導体である。具体的には、金属錯体化合物としては、8−ヒドロキシキノリナートリチウム、ビス(8−ヒドロキシキノリナート)亜鉛、ビス(8−ヒドロキシキノリナート)銅、ビス(8−ヒドロキシキノリナート)マンガン、トリス(8−ヒドロキシキノリナート)アルミニウム、トリス(2−メチル−8−ヒドロキシキノリナート)アルミニウム、トリス(8−ヒドロキシキノリナート)ガリウム、ビス(10−ヒドロキシベンゾ[h]キノリナート)ベリリウム、ビス(10−ヒドロキシベンゾ[h]キノリナート)亜鉛、ビス(2−メチル−8−ヒドロキシキノリナート)クロロガリウム、ビス(2−メチル−8−ヒドロキシキノリナート)(o−クレゾラート)ガリウム、ビス(2−メチル−8−ヒドロキシキノリナート)(1−ナフトラート)アルミニウム、ビス(2−メチル−8−ヒドロキシキノリナート)(2−ナフトラート)ガリウム、ビス(2−メチル−8−ヒドロキシキノリナート)フェノラートガリウム、ビス(o−(2−ベンゾオキサゾリル)フェノラート)亜鉛、ビス(o−(2−ベンゾチアゾリル)フェノラート)亜鉛、ビス(o−(2−ベンゾトリアゾリル)フェノラート)亜鉛等があるが、これらに限定されるものではない。
【0062】
また、含窒素五員誘導体としては、オキサゾール、チアゾール、オキサジアゾール、チアジアゾールもしくはトリアゾール誘導体が好ましい。具体的には、2,5−ビス(1−フェニル)−1,3,4−オキサゾール、ジメチルPOPOP、2,5−ビス(1−フェニル)−1,3,4−チアゾール、2,5−ビス(1−フェニル)−1,3,4−オキサジアゾール、2−(4’−tert−ブチルフェニル)−5−(4”−ビフェニル)−1,3,4−オキサジアゾール、2,5−ビス(1−ナフチル)−1,3,4−オキサジアゾール、1,4−ビス[2−( 5−フェニルオキサジアゾリル)]ベンゼン、1,4−ビス[2−(5−フェニルオキサジアゾリル)−4−tert−ブチルベンゼン]、2−(4’−tert −ブチルフェニル)−5−(4”−ビフェニル)−1,3,4−チアジアゾール、2,5−ビス(1−ナフチル)−1,3,4−チアジアゾール、1,4−ビス[2−(5−フェニルチアジアゾリル)]ベンゼン、2−(4’−tert−ブチルフェニル)−5−(4”−ビフェニル)−1,3,4−トリアゾール、2,5−ビス(1−ナフチル)−1,3,4−トリアゾール、1,4−ビス[2−(5−フ ェニルトリアゾリル)]ベンゼン等があるが、これらに限定されるものではない 。
【0063】
本有機EL素子においては、発光層中に、一般式[1]化合物の他に、発光材料、ドーピング材料、正孔注入材料および電子注入材料の少なくとも1種が同一層に含有されてもよい。また、本発明により得られた有機EL素子の、温度、湿度、雰囲気等に対する安定性の向上のために、素子の表面に保護層を設けたり、シリコンオイル、樹脂等により素子全体を保護することも可能である。
【0064】
有機EL素子の陽極に使用される導電性材料としては、4eVより大きな仕事関数を持つものが適しており、炭素、アルミニウム、バナジウム、鉄、コバルト、ニッケル、タングステン、銀、金、白金、パラジウム等およびそれらの合金、ITO基板、NESA基板に使用される酸化スズ、酸化インジウム等の酸化金属、さらにはポリチオフェンやポリピロール等の有機導電性樹脂が用いられる。
【0065】
陰極に使用される導電性物質としては、4eVより小さな仕事関数を持つものが適しており、マグネシウム、カルシウム、錫、鉛、チタニウム、イットリウム、リチウム、ルテニウム、マンガン、アルミニウム等およびそれらの合金が用いられるが、これらに限定されるものではない。合金としては、マグネシウム/銀、マグネシウム/インジウム、リチウム/アルミニウム等が代表例として挙げられるが、これらに限定されるものではない。合金の比率は、蒸着源の温度、雰囲気、真空度等により制御され、適切な比率に選択される。陽極および陰極は、必要があれば二層以上の層構成により形成されていても良い。
【0066】
有機EL素子では、効率良く発光させるために、少なくとも一方は素子の発光波長領域において充分透明にすることが望ましい。また、基板も透明であることが望ましい。透明電極は、上記の導電性材料を使用して、蒸着やスパッタリング等の方法で所定の透光性が確保するように設定する。発光面の電極は、光透過率を10%以上にすることが望ましい。基板は、機械的、熱的強度を有し、透明性を有するものであれば限定されるものではないが、例示すると、ガラス基板、ポリエチレン板、ポリエチレンテレフテレート板、ポリエーテルサルフォン板、ポリプロピレン板等の透明樹脂があげられる。
【0067】
本発明に係わる有機EL素子の各層の形成は、真空蒸着、スパッタリング、プラズマ、イオンプレーティング等の乾式成膜法やスピンコーティング、ディッピング、フローコーティング等の湿式成膜法のいずれの方法を適用することができる。膜厚は特に限定されるものではないが、適切な膜厚に設定する必要がある。膜厚が厚すぎると、一定の光出力を得るために大きな印加電圧が必要になり効率が悪くなる。膜厚が薄すぎるとピンホール等が発生して、電界を印加しても充分な発光輝度が得られない。通常の膜厚は5nmから10μmの範囲が適しているが、10nmから0.2μmの範囲がさらに好ましい。
【0068】
湿式成膜法の場合、各層を形成する材料を、エタノール、クロロホルム、テトラヒドロフラン、ジオキサン等の適切な溶媒に溶解または分散させて薄膜を形成するが、その溶媒はいずれであっても良い。また、いずれの有機薄膜層においても、成膜性向上、膜のピンホール防止等のため適切な樹脂や添加剤を使用しても良い。使用の可能な樹脂としては、ポリスチレン、ポリカーボネート、ポリアリレート、ポリエステル、ポリアミド、ポリウレタン、ポリスルフォン、ポリメチルメタクリレート、ポリメチルアクリレート、セルロース等の絶縁性樹脂およびそれらの共重合体、ポリ−N−ビニルカルバゾール、ポリシラン等の光導電性樹脂、ポリチオフェン、ポリピロール等の導電性樹脂を挙げることができる。また、添加剤としては、酸化防止剤、紫外線吸収剤、可塑剤等を挙げることができる。
【0069】
以上のように、有機EL素子の発光層に本発明の化合物を用いることにより、発光効率、最大発光輝度等の有機EL素子特性を改良することができた。また、この素子は熱や電流に対して非常に安定であり、さらには低い駆動電圧で実用的に使用可能の発光輝度が得られるため、従来まで大きな問題であった劣化も大幅に低下させることができた。
【0070】
本発明の有機EL素子は、壁掛けテレビ等のフラットパネルディスプレイや、平面発光体として、複写機やプリンター等の光源、液晶ディスプレイや計器類等の光源、表示板、標識灯等へ応用が考えられ、その工業的価値は非常に大きい。
【0071】
本発明の材料は、有機EL素子、電子写真感光体、光電変換素子、太陽電池、イメージセンサー等の分野においても使用できる。
【0072】
【実施例】
以下、本発明を実施例に基づきさらに詳細に説明する。
化合物(3)の合成方法
アルゴン気流下、テトラヒドロフラン50部、1,3,5−トリス(4−リチウムフェニル)ベンゼン10部を加え、−50℃に冷却下、ジメシチルフルオロボロンのジエチルエーテル溶液60部を入れ、24時間攪拌した。その後、溶媒を除き、得られた個体を希塩酸で処理し、目的物をエーテルで抽出した。これを濃縮し、シリカゲルを用いたカラムクロマトグラフィーにより精製して粉末3部を得た。分子量分析、赤外線吸収スペクトルの結果、化合物(3)であることを確認した。
実施例1
洗浄したITO電極付きガラス板上に、発光材料として表3の化合物(1)、表4の化合物(H−4)、ポリカーボネート樹脂(帝人化成:パンライトK−1300)を5:3:2の重量比でテトラヒドロフランに溶解させ、スピンコーティング法により膜厚100nmの発光層を得た。その上に、マグネシウムとインジウムを10:1で混合した合金で膜厚150nmの電極を形成して有機EL素子を得た。この素子の発光特性は、直流電圧5Vで20(cd/m2)、最高輝 度1500(cd/m2)、発光効率0.50(lm/W)の発光 が得られた。
【0073】
実施例2
洗浄したITO電極付きガラス板上に、表3の化合物(2)を真空蒸着して膜厚100nmの発光層を作成し、その上に、マグネシウムと銀を10:1で混合した合金で膜厚100nmの電極を形成して有機EL素子を得た。発光層は10-6Torrの真空中で、基板温度室温の条件下で蒸着した。この素子は、直流電圧5Vで160(cd/m2)、最高輝度700(cd/m2)、発光効率0.60(lm/W)の発光が得られた。
【0074】
実施例3
洗浄したITO電極付きガラス板上に、表3の化合物(3)を塩化メチレンに溶解させ、スピンコーティング法により膜厚50nmの発光層を得た。次いで、ビス(2−メチル−8−ヒドロキシキノリナート)(2−ナフトラート)ガリウムを真空蒸着して膜厚10nmの電子注入層を作成し、その上に、マグネシウムとアルミニウムを10:1で混合した合金で膜厚100nmの電極を形成して有機EL素子を得た。発光層および電子注入層は10-6Torrの真空中で、基板温度室温の条件下で蒸着した。この素子は、直流電圧5Vで100(cd/m2 )、最高輝度6000(cd/m2)、発光効率0.5(lm/W)の発光が得 られた。
【0075】
実施例4
洗浄したITO電極付きガラス板上に、銅フタロシアニンを真空蒸着して、膜厚30nmの正孔注入層を得た。ついで、次いで、トリス(8−ヒドロキシキノリナート)アルミニウムを真空蒸着して膜厚10nmの電子注入層を作成し、表3の化合物(2)を真空蒸着して、膜厚50nmに形成した。その上に、アルミニウムとリチウムを50:1で混合した合金で膜厚100nmの電極を形成して有機EL素子を得た。正孔注入層および発光層は10-6Torrの真空中で、基板温度室温の条件下で蒸着した。この素子は、直流電圧5Vで約150(cd/m2)、最高輝度8000(cd/m2)、発光効率0.9(lm/W)の発光が得られた。
【0076】
実施例5〜20
洗浄したITO電極付きガラス板上に表4の正孔注入材料のうちの1種を真空蒸着して、膜厚30nmの正孔注入層を得た。次いで、表3の発光材料のうちの1種を真空蒸着して膜厚30nmの発光層を作成し、その上に、マグネシウムと銀を10:1で混合した合金で膜厚150nmの膜厚の電極を形成して有機EL素子を得た。各層は10-6Torrの真空中で、基板温度室温の条件下で蒸着した。各素子に使用した材料とこの素子の発光特性を表5に示す。本実施例の有機EL素子は、全て最高輝度4000(cd/m2)以上の輝度特 性を有していた。
【0077】
【表4】
【0078】
【0079】
【0080】
【0081】
【0082】
【表5】
【0083】
実施例21
洗浄したITO電極付きガラス板上に、4,4’,4”−トリス(N−(3−メチルフェニル)−N−フェニルアミノ)トリフェニルアミンを真空蒸着して、膜厚25nmの第一正孔注入層を得た。さらに、正孔注入材料(H−1)を真空蒸着して、膜厚5nmの第二正孔注入層を得た。次いで、発光材料として化合物(2)を真空蒸着して膜厚20nmの発光層を得た。さらに、電子注入材料(E−2)を真空蒸着して、膜厚30nmの電子注入層を得た。その上に、マグネシウムと銀を10:1で混合した合金で膜厚150nmの電極を形成して有機EL素子を得た。この素子は、直流電圧5Vで250(cd/m2 )、最高輝度12000(cd/m2)、発光効率1.2(lm/W)の発光 が得られた。
【0084】
実施例22
洗浄したITO電極付きガラス板上に、銅フタロシアニンを真空蒸着して、膜厚25nmの第一正孔注入層を得た。さらに、正孔注入材料(H−2)を真空蒸着して、膜厚5nmの第二正孔注入層を得た。次いで、発光材料として化合物(3)を真空蒸着して膜厚20nmの発光層を得た。その上に、マグネシウムと銀を10:1で混合した合金で膜厚150nmの電極を形成して有機EL素子を得た。この素子は、直流電圧5Vで710(cd/m2)、最高輝度 9000(cd/m2)、発光効率1.0(lm/W)の発光が得られた。
【0085】
実施例23
洗浄したITO電極付きガラス板上に、表4の化合物(H−8)真空蒸着して、膜厚25nmの第一正孔注入層を得た。さらに、正孔注入材料(H−5)を真空蒸着して、膜厚5nmの第二正孔注入層を得た。次いで、発光材料として化合物(3)を真空蒸着して膜厚20nmの発光層を得た。その上に、マグネシウムと銀を10:1で混合した合金で膜厚150nmの電極を形成して有機EL素子を得た。この素子は、直流電圧5Vで650(cd/m2)、最高 輝度8000(cd/m2)、発光効率0.9(lm/W)の発光が得られた 。
【0086】
実施例24
洗浄したITO電極付きガラス板上に、正孔注入材料(H−5)を真空蒸着して、膜厚20nmの正孔注入層を得た。次いで、電子注入材料(E−4)を真空蒸着して、膜厚20nmの第一電子注入層を得た。さらに、化合物(2)を真空蒸着して、膜厚10nmの第二電子注入層を得た。その上に、マグネシウムと銀を10:1で混合した合金で膜厚150nmの電極を形成して有機EL素子を得た。この素子は、直流電圧5Vで120(cd/m2)、最高輝度 10000(cd/m2)、発光効率1.2(lm/W)の発光が得られた。
【0087】
実施例25
発光層として、表3の化合物(2)と表4の化合物(E−1)を1:100の重量比で蒸着した膜厚30nmの発光層を使用する以外は、実施例21と同様の方法で有機EL素子を作製した。この素子は、直流電圧5Vで230(cd/m2)、最高輝度15000(cd/m2)、発光効率1.8(lm/W)の発光が得られた。
【0088】
実施例26
発光層として、表3の化合物(3)とN,N’−ジメチルキナクリドンを100:1の重量比で蒸着した膜厚30nmの発光層を使用する以外は、実施例5と同様の方法で有機EL素子を作製した。この素子は、直流電圧5Vで600(cd/m2)、最高輝度50000(cd/m2)、発光効率5.2(lm/W)の発光が得られた。
【0089】
本実施例で示された有機EL素子は、発光輝度として5000(cd/m2 )以上であり、全て高い発光効率を得ることができた。本実施例で示された有機EL素子について、3(mA/cm2)で連続発光させたところ、1000 時間以上安定な発光を観測することができ、ダークスポットもほとんど観察されなかった。本発明の有機EL素子材料を発光材料として使用した有機EL素子は、発光材料の蛍光量子効率が極めて高いので、この発光材料を使用した素子においては、低電流印可領域での高輝度発光が可能になり、また、発光層中で一般式[1]の化合物に加えてドーピング材料を使用することにより、最大発光輝度、最大発光効率を向上させることができた。さらには、一般式[1]の化合物に、蛍光色の異なるドーピング材料を添加することによって、異なる発光色の発光素子を得ることができた。
【0090】
本発明の有機EL素子は発光効率、発光輝度の向上と長寿命化を達成するものであり、併せて使用される発光材料、ドーピング材料、正孔注入材料、電子注入材料、増感剤、樹脂、電極材料等および素子作製方法を限定するものではない。
【0091】
【発明の効果】
本発明の有機EL素子材料を発光材料として使用した有機EL素子は、従来に比べて高い発光効率で高輝度の発光を示し、長寿命の有機EL素子を得ることができた。以上により本発明で示した化合物を、有機EL素子の少なくとも一層に使用すること、および、本発明の素子構成により形成された有機EL素子は、高輝度、高発光効率、長寿命の有機EL素子を容易に作製することが可能となった。[0001]
[Industrial application fields]
The present invention relates to a light-emitting material for organic electroluminescence (EL) elements and a high-luminance light-emitting element used for flat light sources and displays.
[0002]
[Prior art]
An EL element using an organic substance is considered to be promising for use as an inexpensive large-area full-color display element of a solid light emitting type, and many developments have been made. In general, an EL element is composed of a light emitting layer and a pair of counter electrodes sandwiching the layer. In light emission, when an electric field is applied between both electrodes, electrons are injected from the cathode side, holes are injected from the anode side, the electrons recombine with holes in the light emitting layer, and the energy level starts from the conduction band. It is a phenomenon in which energy is released as light when returning to the valence band.
[0003]
Conventional organic EL elements have a higher driving voltage and lower light emission luminance and light emission efficiency than inorganic EL elements. Further, the characteristic deterioration has been remarkably not put into practical use.
In recent years, organic EL devices in which thin films containing organic compounds with high fluorescence quantum efficiency that emit light at a low voltage of 10 V or less have been reported and attracted attention (Applied Physics Letters, Vol. 51, page 913). 1987). This method uses a metal chelate complex as a light emitting layer and an amine compound as a hole injection layer to obtain high luminance green light emission. The luminance is several thousand cd / m at a DC voltage of 6 to 7V. 2 The maximum luminous efficiency is 1.5 lm / W, and the performance is close to the practical range.
[0004]
However, the organic EL devices up to now have improved light emission intensity due to the improvement of the structure, but do not yet have sufficient light emission luminance. Moreover, it has a big problem that it is inferior in stability during repeated use. This is because, for example, metal chelate complexes such as tris (8-hydroxyquinolinate) aluminum complex are chemically unstable during electroluminescence, poor adhesion to the cathode, and greatly deteriorated in a short time of light emission. It was. For the above reasons, in order to develop an organic EL device having high luminous brightness and luminous efficiency and excellent stability during repeated use, the development of a light-emitting material with excellent luminous ability and durability has been developed. It is desired.
[0005]
[Problems to be solved by the invention]
An object of the present invention is to provide an organic EL device having high emission luminance and excellent stability in repeated use. As a result of intensive studies by the present inventors, the organic EL device using the organic EL device material represented by the general formula [1] has high emission luminance and light emission efficiency, and excellent stability during repeated use. As a result, the present invention has been accomplished.
[0006]
[Means for Solving the Problems]
The present invention relates to a material for an organic electroluminescence element represented by the following general formula [1].
General formula [1]
[Chemical 2]
[Wherein, B represents a boron atom, and A represents a 3-15 valent group. Ar 1 And Ar 2 Each independently represents a substituted or unsubstituted alkyl group, a substituted or unsubstituted monocyclic group, a substituted or unsubstituted condensed polycyclic group, and Ar 1 And Ar 2 May be combined with each other. However, A, Ar 1 Or Ar 2 At least one of comprises an aromatic ring or a heteroaromatic ring. ]
[0007]
Further, in the present invention, A is a 3-15 valent monocyclic group, a 3-15 valent condensed polycyclic group, or 2-15 aromatic ring structural units containing a monocyclic ring or a condensed polycyclic ring. Or it is related with the said material for organic electroluminescent elements which is a 3-15 valent group connected through the non-aromatic ring structural unit which consists of carbon, hydrogen, oxygen, nitrogen, and a sulfur atom.
[0008]
The present invention also relates to the material for an organic electroluminescent element, wherein A is a trivalent group.
[0009]
The present invention also provides Ar 1 ~ Ar 2 Is a substituted or unsubstituted monocyclic aryl group. The present invention relates to the material for an organic electroluminescence device.
[0010]
Further, the present invention provides an organic electroluminescence device comprising a light emitting layer or a plurality of organic compound thin films including a light emitting layer between a pair of electrodes, wherein any one of the above layers is the above organic electroluminescent device material alone. Or it relates to the organic electroluminescent element characterized by containing as a mixture.
[0011]
Further, the present invention provides an organic electroluminescent device comprising a light emitting layer or a plurality of organic compound thin film containing a light emitting layer between a pair of electrodes, wherein the light emitting layer is a single or mixture of the above organic electroluminescent device materials. It is related with the organic electroluminescent element characterized by containing.
[0012]
Further, the present invention provides an organic electroluminescent device comprising a light emitting layer or a plurality of organic compound thin films including a light emitting layer formed between a pair of electrodes, wherein the electron injection layer is a single or mixture of the organic electroluminescent device material. It is related with the organic electroluminescent element characterized by containing as.
[0013]
Furthermore, the present invention provides the organic electroluminescence device as described above, wherein a hole injection layer is formed between the anode and the light emitting layer.
[0014]
The present invention also relates to the above organic electroluminescence device, wherein the hole injection layer is a layer containing at least one selected from the group consisting of an arylamine derivative, a phthalocyanine compound, and a triphenylene derivative.
[0015]
DETAILED DESCRIPTION OF THE INVENTION
A in the compound represented by the general formula [1] in the present invention is a 3 to 15 valent group. Preferably, 3 to 15-valent monocyclic group, 3 to 15-valent condensed polycyclic group, or 2 to 15 aromatic ring structural units containing a monocyclic ring or condensed polycyclic ring are directly connected, or carbon, hydrogen, It is a 3-15 valent group connected through a non-aromatic ring structural unit consisting of oxygen, nitrogen and sulfur atoms.
[0016]
Examples of the substituted or unsubstituted monocyclic group of the present invention include a monocyclic cycloalkyl group, a monocyclic aryl group, and a monocyclic heterocyclic group.
Examples of the monocyclic cycloalkyl group include cycloalkyl groups having 4 to 8 carbon atoms such as a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, and a cyclooctyl group.
A monocyclic aryl group includes a phenyl group.
Monocyclic heterocyclic groups include thienyl, thiophenyl, furyl, pyrrolyl, imidazolyl, pyrazolyl, pyridinyl, pyrazinyl, pyrimidinyl, pyridazinyl, triazinyl, triazolyl, oxazolyl, thiazolyl, There are oxadiazolyl group, thiadiazolyl group, imidadiazolyl group and the like.
[0017]
Examples of the substituted or unsubstituted condensed polycyclic group include a condensed polycyclic aryl group, a condensed polycyclic heterocyclic group, and a condensed polycyclic cycloalkyl group.
Examples of the condensed polycyclic aryl group include a naphthyl group, anthranyl group, phenanthrenyl group, fluorenyl group, acenaphthyl group, azulenyl group, heptalenyl group, acenaphthylenyl group, pyrenyl group, perylenyl group, and triphenylyl group.
[0018]
The condensed polycyclic heterocyclic group includes indolyl group, quinolyl group, isoquinolyl group, phthalazinyl group, quinoxalinyl group, quinazolinyl group, carbazolyl group, acridinyl group, phenazinyl group, furfuryl group, isothiazolyl group, isoxazolyl group, furazanyl group, phenoxazinyl group Benzothiazolyl group, benzoxazolyl group, benzimidazolyl, benzotriazolyl group, pranyl group and the like. Examples of other condensed polycyclic groups include 1-tetralyl group, 2-tetralyl group, tetrahydroquinolyl group and the like.
[0019]
Moreover, as A of this invention, the 3-15 valent group which the said monocyclic group or condensed polycyclic group directly connected is mentioned.
Further, as A of the present invention, the monocyclic group or condensed polycyclic group is a 3 to 15 valent group in which the monocyclic group or condensed polycyclic group is linked via a non-aromatic ring structural unit composed of a carbon atom, a hydrogen atom, an oxygen atom, a nitrogen atom, or a sulfur atom. There is a group.
A non-aromatic ring structural unit composed of a carbon atom, a hydrogen atom, an oxygen atom, a nitrogen atom and a sulfur atom is bivalent or more, linear, branched or cyclic, and does not contain an aromatic ring. Preferably, it has 1 to 40 atoms. If non-aromatic ring structural unit is illustrated, in addition to an oxygen atom and a sulfur atom, a divalent or higher-valent residue such as an alkyl group, an alkylene group, an alkyloxy group, an alkylthio group, a cycloalkyl group, an amino group, and an alkylamino group Can be illustrated.
When the aromatic ring structural unit is bonded directly or via a non-aromatic ring structural unit, the number of aromatic ring structural units is 2 to 10, and may be bonded at two or more locations. Furthermore, at least one of the aromatic ring structural units may be a condensed aromatic ring or a condensed heteroaromatic ring, and there may be a bond between a single ring and a condensed ring.
The aromatic ring structural unit may be substituted with an alkyl group or the like. Moreover, it is preferable that the boron atom is couple | bonded with the aromatic ring structural unit.
[0020]
Specific examples of A include benzene, toluene, xylene, ethylbenzene, naphthalene, anthracene, phenanthrene, fluorene, pyrene, chrysene, naphthacene, perylene, triphenylene, azulene, fluorenone, anthraquinone, dibenzosuberenone, tetracyanoquinodimethane, etc. Or a residue of an unsubstituted aromatic ring or fused aromatic ring,
Furan, thiophene, pyrrole, pyridine, pyrone, oxazole, pyrazine, pyrimidine, melamine, oxadiazole, triazole, thiadiazole, indole, quinoline, isoquinoline, carbazole, acridine, thioxanthone, coumarin, acridone, diphenylene sulfone, quinoxaline, benzothiazole , Residues of heteroaromatic rings or condensed heteroaromatic rings such as phenazine, phenanthroline, phenothiazine, quinacridone, flavanthrone, indanthrone,
[0021]
Furthermore, biphenyl, terphenyl, binaphthyl, triphenylbenzene, diphenylanthracene, rubrene, bifluorenylidene, bipyridine, biquinoline, flavone, phenyltriazine, bisbenzothiazole, bithiophene, phenylbenzotriazole, phenylbenzimidazole, phenylacridine, Residues in which aromatic ring structural units such as bis (benzoxazolyl) thiophene, bis (phenyloxazolyl) benzene, biphenylylphenyloxadiazole, diphenylbenzoquinone, diphenylisobenzofuran, diphenylpyridine are directly linked,
[0022]
Stilbene, dibenzyl, diphenylmethane, bis (phenylisopropyl) benzene, diphenylfluorene, diphenylhexafluoropropane, dibenzylnaphthyl ketone, dibenzylidenecyclohexanone, distyrylnaphthalene, (phenylethyl) benzylnaphthalene, diphenyl ether, methyldiphenylamine, benzophenone, benzoic acid Phenyl, diphenylurea, diphenylsulfide, diphenylsulfone, diphenoxybiphenyl, bis (phenoxyphenyl) sulfone, bis (phenoxyphenyl) propane, diphenoxybenzene, ethylene glycol diphenyl ether, neopentyl glycol diphenyl ether, dipicolylamine, dipyridylamine, hexa Hydrotriphenyltriazine, tripi Jill triazine, triphenylamine, tris aromatic ring structure units with each other, such as (diphenylamino) benzene, the residue of a compound having a linked via a non-aromatic ring structural unit backbone.
[0023]
From the viewpoint of synthesis, A is preferably a trivalent group, and specific examples thereof include benzene, 1,3,5-triphenylbenzene, 1,3,5-triphenyltriazine, 1,3,5-tris (biphenyl). ) There are trivalent residues such as benzene, triphenylamine, and tris (biphenyl) amine.
[0024]
Hereinafter, typical examples of the structure of A of the compound of the general formula [1] of the present invention are specifically illustrated in Table 1, but the present invention is not limited to these representative examples.
[0025]
[Table 1]
[0026]
[0027]
[0028]
[0029]
[0030]
[0031]
[0032]
Ar of the compound represented by the general formula [1] in the present invention 1 And Ar 2 Each independently represents a substituted or unsubstituted alkyl group, a substituted or unsubstituted monocyclic group, or a substituted or unsubstituted condensed polycyclic group. As for the monocyclic group and the condensed polycyclic group, those listed in the description of A can be exemplified again.
As the substituted or unsubstituted alkyl group, the substituted or unsubstituted alkyl group includes methyl group, ethyl group, propyl group, butyl group, sec-butyl group, tert-butyl group, pentyl group, hexyl group, heptyl group. Octyl group, stearyl group, 2-phenylisopropyl group, trichloromethyl group, trifluoromethyl group, benzyl group, α-phenoxybenzyl group, α, α-dimethylbenzyl group, α, α-methylphenylbenzyl group, α, There are substituents of alkyl groups having 1 to 30 carbon atoms such as α-ditrifluoromethylbenzyl group, triphenylmethyl group, α-benzyloxybenzyl group and the like.
[0033]
Ar 1 And Ar 2 May be combined together to form a pyrrolidine ring, a dioxolane ring, a pyrazolidine ring, a piperidine ring, a dioxane ring, a morpholine ring, a piperazine ring, a trithiane ring, etc. and the above aromatic heterocyclic ring. Is done.
[0034]
Ar 1 And Ar 2 Is preferably a monocyclic aryl group, and when A does not have an aromatic ring structure, at least Ar 1 And Ar 2 Is preferably an aromatic ring structure. In general formula [1], there are n boron atoms. In the process of production, Ar of each boron atom is present. 1 And Ar 2 Are not necessarily the same. Further, the material of the general formula [1] may be a mixture of two or more.
[0035]
A, Ar 1 , Ar 2 Specific examples of the substituents in the above include fluorine, chlorine, bromine, iodine as halogen atoms, methyl, ethyl, propyl, butyl, sec-butyl, tert- as substituted or unsubstituted alkyl groups. Butyl, pentyl, hexyl, heptyl, octyl, stearyl, 2-phenylisopropyl, trichloromethyl, trifluoromethyl, benzyl, α-phenoxybenzyl, α, α-dimethylbenzyl, There are α, α-methylphenylbenzyl group, α, α-ditrifluoromethylbenzyl group, triphenylmethyl group, α-benzyloxybenzyl group and the like. Examples of the substituted or unsubstituted alkoxyl group include methoxy group, ethoxy group, propoxy group, n-butoxy group, t-butoxy group, n-octyloxy group, t-octyloxy group, 1,1,1-tetrafluoroethoxy Group, phenoxy group, benzyloxy group, octylphenoxy group and the like. Examples of substituted or unsubstituted aryl groups include phenyl, 2-methylphenyl, 3-methylphenyl, 4-methylphenyl, 4-ethylphenyl, biphenyl, 4-methylbiphenyl, 4-ethylbiphenyl. Group, 4-cyclohexylbiphenyl group terphenyl group, 3,5-dichlorophenyl group, naphthyl group, 5-methylnaphthyl group, anthryl group, pyrenyl group and the like. Examples of the substituted or unsubstituted amino group include an amino group, a dimethylamino group, a diethylamino group, a phenylmethylamino group, a diphenylamino group, a ditolylamino group, and a dibenzylamino group. Further, adjacent substituents are bonded to each other, and are substituted or unsubstituted, cyclopentene ring, cyclohexene ring, phenyl ring, naphthalene ring, anthracene ring, pyrene ring, fluorene ring, furan ring, thiophene ring, pyrrole ring. , Oxazole ring, thiazole ring, imidazole ring, pyridine ring, pyrazine ring, pyrroline ring, pyrazoline ring, indole ring, quinoline ring, quinoxaline ring, xanthene ring, carbazole ring, acridine ring, phenanthroline ring, etc. good.
[0036]
In the following, Ar of the general formula [1] of the present invention 1 And Ar 2 These representative examples are specifically illustrated in Table 2, but the present invention is not limited to these representative examples.
[0037]
[Table 2]
[0038]
[0039]
[0040]
The compound in the present invention has a high glass transition point and melting point by introducing a boron atom and by introducing trivalent or higher A. For this reason, resistance to Joule heat (heat resistance) generated in the organic layer during organic electroluminescence, between the organic layers or between the organic layer and the metal electrode is improved. This is also advantageous when emitting light for a long time.
[0041]
A general synthesis method of the compound represented by the general formula [1] of the present invention is shown below. A lithium compound having a trivalent to 15-valent residue corresponding to A in the general formula [1], and Ar 1 And Ar 2 Then, a boron derivative having fluorine can be reacted in a tetrahydrofuran solvent to synthesize a compound of the general formula [1]. Some compounds can be synthesized from a sodium compound of the residue instead of the lithium compound of a trivalent to 15-valent residue corresponding to A in the general formula [1]. The solvent is diethyl ether, petroleum ether, or hexane. The above synthesis method is an example and is not particularly limited.
[0042]
Hereinafter, representative examples of the compound of the general formula [1] of the present invention are specifically illustrated in Table 3, but the present invention is not limited to these representative examples.
[0043]
[Table 3]
[0044]
[0045]
[0046]
[0047]
[0048]
[0049]
[0050]
[0051]
The compound represented by the general formula [1] of the present invention is a compound having strong fluorescence in the solid state and excellent in electroluminescence. In addition, since it has excellent electron injecting property and electron transporting property from the metal electrode, it can be used effectively as a light emitting material, and further, other hole transporting material, electron transporting material or Doping materials can be used.
[0052]
An organic EL element is an element in which a single-layer or multilayer organic thin film is formed between an anode and a cathode. In the case of the single layer type, a light emitting layer is provided between the anode and the cathode. The light-emitting layer contains a light-emitting material, and may further contain a hole-injecting material or an electron-injecting material in order to transport holes injected from the anode or electrons injected from the cathode to the light-emitting material. However, since the light emitting material of the present invention has extremely high emission quantum efficiency, high hole transport ability and electron transport ability and can form a uniform thin film, the light emitting layer is formed only by the light emitting material of the present invention. It is also possible. The multi-layer type includes (anode / hole injection band / light emitting layer / cathode), (anode / light emitting layer / electron injection band / cathode), and (anode / hole injection band / light emitting layer / electron injection band / cathode). There are organic EL elements stacked in a configuration. The compound of the general formula [1] has high light emission properties and has hole injection properties, hole transport properties, electron injection properties, and electron transport properties, and therefore can be used as a light emitting material in a light emitting layer.
[0053]
If necessary, in addition to the compound of the general formula [1] of the present invention, further known light emitting materials, doping materials, hole injection materials, and electron injection materials can be used for the light emitting layer. By making the organic EL element have a multi-layer structure, it is possible to prevent a decrease in luminance and lifetime due to quenching. If necessary, a light emitting material, a doping material, a hole injection material, and an electron injection material can be used in combination. Further, by using a doping material, it is possible to improve light emission luminance and light emission efficiency and to obtain red and blue light emission. Moreover, the hole injection zone, the light emitting layer, and the electron injection zone may each be formed with a layer configuration of two or more layers. In that case, in the case of the hole injection zone, the layer that injects holes from the electrode is a hole injection layer, and the layer that receives holes from the hole injection layer and transports holes to the light emitting layer is a hole transport layer. Call. Similarly, in the case of an electron injection zone, a layer for injecting electrons from an electrode is referred to as an electron injection layer, and a layer for receiving electrons from the electron injection layer and transporting electrons to a light emitting layer is referred to as an electron transport layer. Each of these layers is selected and used depending on factors such as the energy level of the material, heat resistance, and adhesion to the organic layer or metal electrode.
[0054]
Examples of the light-emitting material or doping material that can be used in the light-emitting layer together with the compound of the general formula [1] include anthracene, naphthalene, phenanthrene, pyrene, tetracene, coronene, chrysene, fluorescein, perylene, phthaloperylene, naphthaloperylene, perinone, phthaloperinone, naphthaloperinone, diphenyl Butadiene, tetraphenylbutadiene, coumarin, oxadiazole, aldazine, bisbenzoxazoline, bisstyryl, pyrazine, cyclopentadiene, quinoline metal complex, aminoquinoline metal complex, benzoquinoline metal complex, imine, diphenylethylene, vinylanthracene, diaminocarbazole , Pyran, thiopyran, polymethine, merocyanine, imidazole chelating oxinoid compound, quinacridone, rubre And there is a fluorescent dye for a dye laser for and brightening the like, but is not limited thereto.
[0055]
Any of the abundance ratios of the compound of the general formula [1] and the above-mentioned compound that can be used in the light emitting layer in the light emitting layer may be the main component. That is, by the combination of the above-described compound and the compound in the present invention, the compound in the present invention can be a main material for forming a light emitting layer or a dopink material in another main material.
[0056]
As a hole injection material, it has the ability to transport holes, has a hole injection effect from the anode, an excellent hole injection effect for the light emitting layer or the light emitting material, and excitons generated in the light emitting layer. Examples thereof include compounds that prevent movement to an electron injection zone or an electron injection material and have an excellent thin film forming ability. Specifically, phthalocyanine derivatives, naphthalocyanine derivatives, porphyrin derivatives, oxazole, oxadiazole, triazole, imidazole, imidazolone, imidazolethione, pyrazoline, pyrazolone, tetrahydroimidazole, oxazole, oxadiazole, hydrazone, acyl hydrazone, polyaryl Alkane, stilbene, butadiene, benzidine type triphenylamine, styrylamine type triphenylamine, diamine type triphenylamine, etc., and their derivatives, and polymer materials such as polyvinyl carbazole, polysilane, conductive polymer, etc. However, it is not limited to these.
[0057]
Among the hole injection materials that can be used in the organic EL device of the present invention, more effective hole injection materials are arylamine derivatives, phthalocyanine compounds, or triphenylene derivatives. Specific examples of the arylamine derivative include triphenylamine, tolylamine, tolyldiphenylamine, N, N′-diphenyl-N, N′-di-m-tolyl-4,4′-biphenyldiamine, N, N, N ', N'-tetra (p-tolyl) -p-phenylenediamine, N, N, N', N'-tetra-p-tolyl-4,4'-biphenyldiamine, N, N'-diphenyl-N, N′-di (1-naphthyl) -4,4′-biphenyldiamine, N, N′-di (4-n-butylphenyl) -N, N′-di-p-tolyl-9,10-phenanthrenediamine 4,4 ′, 4 ″ -tris (N-phenyl-Nm-tolylamino) triphenylamine, 1,1-bis [4- (di-p-tolylamino) phenyl] cyclohexane, etc., or aromatics thereof Tertiary amine skeleton There are oligomers or polymers, etc., but is not limited thereto.
[0058]
Specific examples of the phthalocyanine (Pc) compound include H 2 Pc, CuPc, CoPc, NiPc, ZnPc, PdPc, FePc, MnPc, ClAlPc, ClGaPc, ClInPc, ClSnPc, Cl 2 Examples include, but are not limited to, phthalocyanine derivatives such as SiPc, (HO) AlPc, (HO) GaPc, VOPc, TiOPc, MoOPc, and GaPc-O-GaPc, and naphthalocyanine derivatives.
[0059]
Specific examples of triphenylene derivatives include hexaalkoxytriphenylenes such as hexamethoxytriphenylene, hexaethoxytriphenylene, hexahexyloxytriphenylene, hexabenzyloxytriphenylene, trimethylenedioxytriphenylene, triethylenedioxytriphenylene, hexaphenoxytriphenylene, hexanaphthyl. Examples include, but are not limited to, hexaaryloxytriphenylenes such as oxytriphenylene, hexabiphenylyloxytriphenylene, and triphenylenedioxytriphenylene, and hexaacyloxytriphenylenes such as hexaacetoxytriphenylene and hexabenzoyloxytriphenylene.
[0060]
As an electron injection material, it has the ability to transport electrons, has a hole injection effect from the cathode, and an excellent electron injection effect for the light-emitting layer or light-emitting material, and hole injection of excitons generated in the light-emitting layer Examples thereof include compounds that prevent migration to the zone and have an excellent thin film forming ability. For example, there are fluorenone, anthraquinodimethane, diphenoquinone, thiopyran dioxide, oxazole, oxadiazole, triazole, imidazole, perylenetetracarboxylic acid, fluorenylidenemethane, anthraquinodimethane, anthrone, and their derivatives. However, it is not limited to these. Further, it can be sensitized by adding an electron accepting substance to the hole injecting material and an electron donating substance to the electron injecting material.
[0061]
In the organic EL device of the present invention, a more effective electron injection material is a metal complex compound or a nitrogen-containing five-membered ring derivative. Specifically, as the metal complex compound, 8-hydroxyquinolinate lithium, bis (8-hydroxyquinolinate) zinc, bis (8-hydroxyquinolinate) copper, bis (8-hydroxyquinolinate) manganese , Tris (8-hydroxyquinolinato) aluminum, tris (2-methyl-8-hydroxyquinolinato) aluminum, tris (8-hydroxyquinolinato) gallium, bis (10-hydroxybenzo [h] quinolinato) beryllium Bis (10-hydroxybenzo [h] quinolinato) zinc, bis (2-methyl-8-hydroxyquinolinato) chlorogallium, bis (2-methyl-8-hydroxyquinolinato) (o-cresolate) gallium, Bis (2-methyl-8-hydroxyquinolinate) (1-naphthlar ) Aluminum, bis (2-methyl-8-hydroxyquinolinato) (2-naphtholato) gallium, bis (2-methyl-8-hydroxyquinolinato) phenolate gallium, bis (o- (2-benzoxazolyl) (L) phenolate) zinc, bis (o- (2-benzothiazolyl) phenolate) zinc, bis (o- (2-benzotriazolyl) phenolate) zinc, and the like, but are not limited thereto.
[0062]
Further, as the nitrogen-containing five-membered derivative, an oxazole, thiazole, oxadiazole, thiadiazole or triazole derivative is preferable. Specifically, 2,5-bis (1-phenyl) -1,3,4-oxazole, dimethyl POPOP, 2,5-bis (1-phenyl) -1,3,4-thiazole, 2,5- Bis (1-phenyl) -1,3,4-oxadiazole, 2- (4′-tert-butylphenyl) -5- (4 ″ -biphenyl) -1,3,4-oxadiazole, 2, 5-bis (1-naphthyl) -1,3,4-oxadiazole, 1,4-bis [2- (5-phenyloxadiazolyl)] benzene, 1,4-bis [2- (5-phenyl) Oxadiazolyl) -4-tert-butylbenzene], 2- (4′-tert-butylphenyl) -5- (4 ″ -biphenyl) -1,3,4-thiadiazole, 2,5-bis (1- Naphthyl) -1,3,4-thiadiazole, 1,4-bis [2- (5- Phenylthiadiazolyl)] benzene, 2- (4′-tert-butylphenyl) -5- (4 ″ -biphenyl) -1,3,4-triazole, 2,5-bis (1-naphthyl) -1, Examples include, but are not limited to, 3,4-triazole, 1,4-bis [2- (5-phenyltriazolyl)] benzene.
[0063]
In the organic EL device, in the light emitting layer, in addition to the compound of the general formula [1], at least one of a light emitting material, a doping material, a hole injection material, and an electron injection material may be contained in the same layer. In order to improve the stability of the organic EL device obtained by the present invention with respect to temperature, humidity, atmosphere, etc., a protective layer is provided on the surface of the device, or the entire device is protected by silicon oil, resin, etc. Is also possible.
[0064]
As a conductive material used for an anode of an organic EL element, a material having a work function larger than 4 eV is suitable, and carbon, aluminum, vanadium, iron, cobalt, nickel, tungsten, silver, gold, platinum, palladium, etc. Further, metal oxides such as tin oxide and indium oxide used for alloys thereof, ITO substrates and NESA substrates, and organic conductive resins such as polythiophene and polypyrrole are used.
[0065]
As the conductive material used for the cathode, those having a work function smaller than 4 eV are suitable, and magnesium, calcium, tin, lead, titanium, yttrium, lithium, ruthenium, manganese, aluminum, and alloys thereof are used. However, it is not limited to these. Examples of alloys include magnesium / silver, magnesium / indium, lithium / aluminum, and the like, but are not limited thereto. The ratio of the alloy is controlled by the temperature of the vapor deposition source, the atmosphere, the degree of vacuum, etc., and is selected to an appropriate ratio. If necessary, the anode and the cathode may be formed of two or more layers.
[0066]
In the organic EL element, in order to efficiently emit light, it is desirable that at least one of the elements be sufficiently transparent in the light emission wavelength region of the element. The substrate is also preferably transparent. The transparent electrode is set using the above-described conductive material so as to ensure a predetermined translucency by a method such as vapor deposition or sputtering. The electrode on the light emitting surface preferably has a light transmittance of 10% or more. The substrate is not limited as long as it has mechanical and thermal strength and has transparency. For example, a glass substrate, a polyethylene plate, a polyethylene terephthalate plate, a polyethersulfone plate, Examples thereof include a transparent resin such as a polypropylene plate.
[0067]
For the formation of each layer of the organic EL device according to the present invention, any of dry film forming methods such as vacuum deposition, sputtering, plasma, ion plating, etc. and wet film forming methods such as spin coating, dipping, and flow coating is applied. be able to. The film thickness is not particularly limited, but must be set to an appropriate film thickness. If the film thickness is too thick, a large applied voltage is required to obtain a constant light output, resulting in poor efficiency. If the film thickness is too thin, pinholes and the like are generated, and sufficient light emission luminance cannot be obtained even when an electric field is applied. The normal film thickness is suitably in the range of 5 nm to 10 μm, but more preferably in the range of 10 nm to 0.2 μm.
[0068]
In the case of the wet film forming method, the material for forming each layer is dissolved or dispersed in an appropriate solvent such as ethanol, chloroform, tetrahydrofuran, dioxane or the like to form a thin film, and any solvent may be used. In any organic thin film layer, an appropriate resin or additive may be used for improving film formability and preventing pinholes in the film. Usable resins include insulating resins such as polystyrene, polycarbonate, polyarylate, polyester, polyamide, polyurethane, polysulfone, polymethyl methacrylate, polymethyl acrylate, and cellulose, and copolymers thereof, poly-N-vinyl. Examples thereof include photoconductive resins such as carbazole and polysilane, and conductive resins such as polythiophene and polypyrrole. Examples of the additive include an antioxidant, an ultraviolet absorber, and a plasticizer.
[0069]
As described above, by using the compound of the present invention in the light emitting layer of the organic EL device, the organic EL device characteristics such as the light emission efficiency and the maximum light emission luminance can be improved. In addition, this element is extremely stable against heat and current, and can be used for light emission brightness that can be used practically at a low driving voltage, so that the degradation that has been a major problem until now is greatly reduced. I was able to.
[0070]
The organic EL device of the present invention can be applied to flat panel displays such as wall-mounted TVs, flat light emitters, light sources such as copiers and printers, light sources such as liquid crystal displays and instruments, display boards, and indicator lights. The industrial value is very large.
[0071]
The material of the present invention can also be used in the fields of organic EL devices, electrophotographic photoreceptors, photoelectric conversion devices, solar cells, image sensors and the like.
[0072]
【Example】
Hereinafter, the present invention will be described in more detail based on examples.
Method for synthesizing compound (3)
Under an argon stream, 50 parts of tetrahydrofuran and 10 parts of 1,3,5-tris (4-lithiumphenyl) benzene were added. Under cooling to −50 ° C., 60 parts of a diethyl ether solution of dimesitylfluoroboron was added, and 24 hours. Stir. Thereafter, the solvent was removed, the obtained solid was treated with dilute hydrochloric acid, and the target product was extracted with ether. This was concentrated and purified by column chromatography using silica gel to obtain 3 parts of powder. As a result of molecular weight analysis and infrared absorption spectrum, it was confirmed to be compound (3).
Example 1
On the washed glass plate with an ITO electrode, the compound (1) in Table 3 and the compound (H-4) in Table 4 and a polycarbonate resin (Teijin Chemicals: Panlite K-1300) as a luminescent material were in a ratio of 5: 3: 2. A light emitting layer having a thickness of 100 nm was obtained by dissolving in tetrahydrofuran by weight and spin coating. On top of this, an electrode having a thickness of 150 nm was formed from an alloy in which magnesium and indium were mixed at a ratio of 10: 1 to obtain an organic EL element. The light emission characteristic of this element is 20 (cd / m at a DC voltage of 5 V). 2 ), Maximum brightness 1500 (cd / m) 2 ), A light emission efficiency of 0.50 (lm / W) was obtained.
[0073]
Example 2
A compound (2) in Table 3 is vacuum-deposited on a cleaned glass plate with an ITO electrode to form a light emitting layer having a thickness of 100 nm, and an alloy in which magnesium and silver are mixed at a ratio of 10: 1 is formed thereon. A 100 nm electrode was formed to obtain an organic EL device. The light emitting layer is 10 -6 Deposition was performed in a vacuum of Torr at a substrate temperature of room temperature. This element is 160 (cd / m) at a DC voltage of 5V. 2 ), Maximum brightness 700 (cd / m) 2 ), A light emission efficiency of 0.60 (lm / W) was obtained.
[0074]
Example 3
On the washed glass plate with an ITO electrode, the compound (3) in Table 3 was dissolved in methylene chloride, and a light emitting layer having a thickness of 50 nm was obtained by a spin coating method. Next, bis (2-methyl-8-hydroxyquinolinate) (2-naphtholate) gallium is vacuum-deposited to form an electron injection layer having a thickness of 10 nm, on which magnesium and aluminum are mixed at a ratio of 10: 1. An electrode having a thickness of 100 nm was formed from the alloy thus obtained to obtain an organic EL element. The light emitting layer and the electron injection layer are 10 -6 Deposition was performed in a vacuum of Torr at a substrate temperature of room temperature. This element is 100 (cd / m) at a DC voltage of 5V. 2 ), Maximum brightness of 6000 (cd / m) 2 ), Emission with a luminous efficiency of 0.5 (lm / W) was obtained.
[0075]
Example 4
Copper phthalocyanine was vacuum-deposited on the washed glass plate with an ITO electrode to obtain a hole injection layer having a thickness of 30 nm. Next, tris (8-hydroxyquinolinato) aluminum was vacuum-deposited to form a 10 nm-thick electron injection layer, and compound (2) in Table 3 was vacuum-deposited to form a 50 nm-thickness. On top of that, an electrode having a thickness of 100 nm was formed of an alloy in which aluminum and lithium were mixed at a ratio of 50: 1 to obtain an organic EL element. The hole injection layer and the light emitting layer are 10 -6 Deposition was performed in a vacuum of Torr at a substrate temperature of room temperature. This element is about 150 (cd / m) at a DC voltage of 5V. 2 ), Maximum brightness 8000 (cd / m) 2 ), Light emission with an emission efficiency of 0.9 (lm / W) was obtained.
[0076]
Examples 5-20
One of the hole injection materials shown in Table 4 was vacuum-deposited on the cleaned glass plate with an ITO electrode to obtain a hole injection layer having a thickness of 30 nm. Next, one of the light emitting materials shown in Table 3 is vacuum-deposited to form a light emitting layer having a thickness of 30 nm, and an alloy in which magnesium and silver are mixed at a ratio of 10: 1 is formed on the light emitting layer. An electrode was formed to obtain an organic EL element. Each layer is 10 -6 Deposition was performed in a vacuum of Torr at a substrate temperature of room temperature. Table 5 shows the materials used for each element and the light emission characteristics of the element. The organic EL elements of this example all have a maximum luminance of 4000 (cd / m 2 ) The above brightness characteristics.
[0077]
[Table 4]
[0078]
[0079]
[0080]
[0081]
[0082]
[Table 5]
[0083]
Example 21
4,4 ′, 4 ″ -tris (N- (3-methylphenyl) -N-phenylamino) triphenylamine was vacuum-deposited on the cleaned glass plate with the ITO electrode to form a first positive electrode having a film thickness of 25 nm. Then, a hole injection layer (H-1) was vacuum deposited to obtain a second hole injection layer having a thickness of 5 nm, and then a compound (2) was vacuum deposited as a light emitting material. Thus, a light emitting layer with a thickness of 20 nm was obtained, and an electron injection material (E-2) was vacuum-deposited to obtain an electron injection layer with a thickness of 30 nm. An electrode having a film thickness of 150 nm was formed from the alloy mixed in the above process to obtain an organic EL element, which was 250 (cd / m) at a DC voltage of 5 V. 2 ), Maximum brightness 12000 (cd / m) 2 ), A light emission efficiency of 1.2 (lm / W) was obtained.
[0084]
Example 22
Copper phthalocyanine was vacuum-deposited on the washed glass plate with an ITO electrode to obtain a first hole injection layer having a thickness of 25 nm. Further, a hole injection material (H-2) was vacuum-deposited to obtain a second hole injection layer having a thickness of 5 nm. Subsequently, the compound (3) was vacuum-deposited as a light emitting material to obtain a light emitting layer having a thickness of 20 nm. On top of that, an electrode having a thickness of 150 nm was formed from an alloy in which magnesium and silver were mixed at a ratio of 10: 1 to obtain an organic EL element. This element is 710 (cd / m) at a DC voltage of 5V. 2 ), Maximum brightness 9000 (cd / m) 2 ), Emission with a luminous efficiency of 1.0 (lm / W) was obtained.
[0085]
Example 23
On the washed glass plate with an ITO electrode, the compound (H-8) in Table 4 was vacuum-deposited to obtain a first hole injection layer having a film thickness of 25 nm. Further, a hole injection material (H-5) was vacuum deposited to obtain a second hole injection layer having a thickness of 5 nm. Subsequently, the compound (3) was vacuum-deposited as a light emitting material to obtain a light emitting layer having a thickness of 20 nm. On top of that, an electrode having a thickness of 150 nm was formed from an alloy in which magnesium and silver were mixed at a ratio of 10: 1 to obtain an organic EL element. This element is 650 (cd / m) at a DC voltage of 5V. 2 ), Maximum brightness 8000 (cd / m) 2 ), Emission with a luminous efficiency of 0.9 (lm / W) was obtained.
[0086]
Example 24
A hole injection material (H-5) was vacuum-deposited on the washed glass plate with an ITO electrode to obtain a hole injection layer having a thickness of 20 nm. Subsequently, the electron injection material (E-4) was vacuum-deposited to obtain a first electron injection layer having a thickness of 20 nm. Further, the compound (2) was vacuum-deposited to obtain a second electron injection layer having a thickness of 10 nm. On top of that, an electrode having a thickness of 150 nm was formed from an alloy in which magnesium and silver were mixed at a ratio of 10: 1 to obtain an organic EL element. This element is 120 (cd / m) at a DC voltage of 5V. 2 ), Maximum luminance 10,000 (cd / m) 2 ), Emission with a luminous efficiency of 1.2 (lm / W) was obtained.
[0087]
Example 25
The same method as in Example 21 except that a light emitting layer having a film thickness of 30 nm obtained by depositing the compound (2) in Table 3 and the compound (E-1) in Table 4 at a weight ratio of 1: 100 is used as the light emitting layer. Thus, an organic EL element was produced. This element is 230 cd / m at a DC voltage of 5V. 2 ), Maximum brightness 15000 (cd / m) 2 ), Emission with a luminous efficiency of 1.8 (lm / W) was obtained.
[0088]
Example 26
The organic layer was prepared in the same manner as in Example 5 except that the light emitting layer was a 30 nm thick light emitting layer in which the compound (3) in Table 3 and N, N′-dimethylquinacridone were deposited at a weight ratio of 100: 1. An EL element was produced. This element is 600 (cd / m) at a DC voltage of 5V. 2 ), Maximum brightness 50000 (cd / m) 2 ), A light emission efficiency of 5.2 (lm / W) was obtained.
[0089]
The organic EL element shown in this example has a light emission luminance of 5000 (cd / m). 2 That is all, and high luminous efficiency could be obtained. For the organic EL element shown in this example, 3 (mA / cm 2 ), It was possible to observe stable light emission for 1000 hours or more, and almost no dark spots were observed. The organic EL element using the organic EL element material of the present invention as a light emitting material has a very high fluorescence quantum efficiency of the light emitting material. Therefore, an element using this light emitting material can emit light with high brightness in a low current application region. In addition, by using a doping material in addition to the compound of the general formula [1] in the light emitting layer, it was possible to improve the maximum light emission luminance and the maximum light emission efficiency. Furthermore, by adding doping materials having different fluorescent colors to the compound of the general formula [1], light emitting elements having different emission colors could be obtained.
[0090]
The organic EL device of the present invention achieves improvement in light emission efficiency, light emission luminance and long life, and is used together with light emitting materials, doping materials, hole injection materials, electron injection materials, sensitizers, resins. The electrode material and the element manufacturing method are not limited.
[0091]
【The invention's effect】
The organic EL device using the organic EL device material of the present invention as a light emitting material showed high luminance and higher luminance than conventional ones, and a long-life organic EL device could be obtained. As described above, the use of the compound shown in the present invention in at least one layer of the organic EL element, and the organic EL element formed by the element configuration of the present invention is an organic EL element having high luminance, high luminous efficiency, and long life. Can be easily produced.
Claims (9)
一般式[1]
General formula [1]
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EP1217668A1 (en) | 2000-12-22 | 2002-06-26 | Covion Organic Semiconductors GmbH | Use of boron and aluminium compounds in electronic devices |
JP4374842B2 (en) * | 2001-11-09 | 2009-12-02 | コニカミノルタホールディングス株式会社 | Organic electroluminescence element and display device |
US6835473B2 (en) * | 2001-12-06 | 2004-12-28 | Konica Corporation | Organic electroluminescence element and display |
JP4300788B2 (en) * | 2001-12-06 | 2009-07-22 | コニカミノルタホールディングス株式会社 | Organic electroluminescence element and display device |
JP4078961B2 (en) * | 2002-11-21 | 2008-04-23 | 三菱化学株式会社 | Bisaminophenylmethane compounds and charge transport materials, organic electroluminescent device materials and organic electroluminescent devices using the same |
JP5040080B2 (en) * | 2005-07-20 | 2012-10-03 | Jnc株式会社 | Organic electroluminescence device |
JP5326280B2 (en) | 2006-06-15 | 2013-10-30 | 東レ株式会社 | Light emitting device material and light emitting device |
KR100892986B1 (en) | 2007-09-20 | 2009-04-10 | 제일모직주식회사 | Organic compound, and organic photoelectric device comprising the same |
JP2008063340A (en) * | 2007-11-06 | 2008-03-21 | Mitsubishi Chemicals Corp | Asymmetrical 1,4-phenylenediamine derivative and organoelectroluminescent element comprising the same |
CN101633668B (en) * | 2008-07-24 | 2015-06-03 | 通用电气公司 | Compound comprising phenylpyridine unit |
JP5129359B2 (en) * | 2011-03-17 | 2013-01-30 | コニカミノルタホールディングス株式会社 | Organic electroluminescence element and display device |
JP5379179B2 (en) * | 2011-03-17 | 2013-12-25 | コニカミノルタ株式会社 | Organic electroluminescence element and display device |
JP6307494B2 (en) | 2013-04-11 | 2018-04-04 | 新日鉄住金化学株式会社 | Adamantane compound for organic electroluminescence device and organic electroluminescence device |
JP6319979B2 (en) * | 2013-09-27 | 2018-05-09 | 株式会社日本触媒 | Boron-containing compound and boron-containing polymer |
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