JP4401281B2 - Lead-free solder alloy and method for producing the powder - Google Patents
Lead-free solder alloy and method for producing the powder Download PDFInfo
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- JP4401281B2 JP4401281B2 JP2004358521A JP2004358521A JP4401281B2 JP 4401281 B2 JP4401281 B2 JP 4401281B2 JP 2004358521 A JP2004358521 A JP 2004358521A JP 2004358521 A JP2004358521 A JP 2004358521A JP 4401281 B2 JP4401281 B2 JP 4401281B2
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- 229910045601 alloy Inorganic materials 0.000 title claims description 36
- 239000000956 alloy Substances 0.000 title claims description 36
- 229910000679 solder Inorganic materials 0.000 title claims description 31
- 239000000843 powder Substances 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 239000007789 gas Substances 0.000 claims description 14
- 239000011521 glass Substances 0.000 claims description 12
- 239000002245 particle Substances 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- 239000002923 metal particle Substances 0.000 claims description 6
- 239000002114 nanocomposite Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 2
- 238000010791 quenching Methods 0.000 claims 1
- 230000000171 quenching effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 7
- 239000010419 fine particle Substances 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 229910020816 Sn Pb Inorganic materials 0.000 description 4
- 229910020922 Sn-Pb Inorganic materials 0.000 description 4
- 229910008783 Sn—Pb Inorganic materials 0.000 description 4
- 238000005219 brazing Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005469 granulation Methods 0.000 description 4
- 230000003179 granulation Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000000265 homogenisation Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002159 nanocrystal Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 229910020994 Sn-Zn Inorganic materials 0.000 description 1
- 229910009069 Sn—Zn Inorganic materials 0.000 description 1
- 229910009083 Sn—Zn—Sb Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000003673 groundwater Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Description
本発明は、人体に有害な鉛を含有しない無鉛錫（Ｓｎ）−亜鉛（Ｚｎ）系ハンダ合金に関し、特に、電子部品関係のガラス、セラミックス接続への適用において有用な無鉛ハンダ合金に関するものである。 The present invention relates to a lead-free tin (Sn) -zinc (Zn) -based solder alloy that does not contain lead harmful to the human body, and more particularly to a lead-free solder alloy that is useful in application to glass and ceramics-related electronic components. .
従来より、セラミックスの接合に対してロウ材を用いる活性金属法によるロウ付けがあるが、８００℃以上の作業温度を有する硬ロウ材だけであって、軟ロウ材（ハンダ合金）には、錫（Ｓｎ）と鉛（Ｐｂ）の共晶組成付近の合金が一般に使用されてきている。特公昭４３−２００９３号、特公昭４５−１７３９号などに示されるＰｂ−Ｓｎ−Ｚｎ系ハンダ、Ｐｂ−Ｓｎ−Ｚｎ−Ｓｂ系ハンダ、特公昭５１−４０４６号に示されるＰｂ（４０〜８５重量％）−Ｓｎ（５〜５０重量％）−Ｂｉ（３〜１２重量％）−Ｓｂ（０．５〜１０重量％）−Ｚｎ（０．５〜１０重量％）系ハンダ、特開昭６２−２５２６９３号に示されるハンダなど各種のハンダについて提案されている。また特開平１１−７７３７０号など低融点化が完成しているが合金製造過程において高温溶融などコスト高の要素を含んでいる。
しかし、上記特許文献に開示されたハンダ合金では比較的柔軟に接続部分を形成でき、接続部の信頼性を確保もできる等の利点を有したが、しかし、このＳｎ−Ｐｂ合金に含まれるＰｂは人体に有害であり、この合金を含有する電子機器が地中に廃棄された場合、環境条件によっては人体に有害なＰｂが溶出して地下水を汚染することになりかねない。このような観点から、人体に有害なＰｂを含有せず、従来のＳｎ−Ｐｂ合金と同等の性能を有する合金が要望されている。このような観点から、ガラス、セラミックスとの接合強度が高く鉛を含まないばかりか、大気雰囲気下でハンダ付けが出来る、低融点１００〜２１０℃のハンダ合金とその粉末の製造方法が要望されている。したがって、本発明の目的は、人体に有害なＰｂを含有せず、かつ従来のＳｎ−Ｐｂ合金と同等の性能を有し、しかも 使用時は大気中でもリフロー出来、鉛フリー化に伴う設備費用の削減につながるガラス低温接合用無鉛ハンダ合金を提供することにある。 However, the solder alloy disclosed in the above-mentioned patent document has advantages such that the connection portion can be formed relatively flexibly and the reliability of the connection portion can be ensured. However, the Pb contained in this Sn—Pb alloy is included. Is harmful to the human body, and when an electronic device containing this alloy is disposed of in the ground, Pb that is harmful to the human body may be eluted depending on the environmental conditions to contaminate the groundwater. From such a point of view, there is a demand for an alloy that does not contain Pb harmful to the human body and has a performance equivalent to that of a conventional Sn-Pb alloy. From such a point of view, there is a demand for a solder alloy having a low melting point of 100 to 210 ° C. and a powder manufacturing method thereof that has high bonding strength with glass and ceramics and does not contain lead, and can be soldered in an air atmosphere. Yes. Therefore, the object of the present invention is to contain Pb that is harmful to the human body, and has the same performance as a conventional Sn-Pb alloy, and can be reflowed even in the atmosphere when used, and the equipment cost associated with lead-free operation is reduced. It is to provide a lead-free solder alloy for glass low-temperature bonding that leads to reduction.
本発明に関わるガラス又はセラミックス接合用の無鉛ハンダ合金は、ビスマス（Ｂｉ）４５〜１５質量％、亜鉛（Ｚｎ）５〜１０質量％、アンチモン（Ｓｂ）０．０１〜１質量％、アルミニウム（Ａｌ）０．０１〜２質量％、インジウム（Ｉｎ）０．５〜３０質量％を含み、残部が錫（Ｓｎ）および不可避的に混入する不純物からなり鉛を含有しない組成の無鉛ハンダ合金において、さらにガリウム（Ｇａ）０．００１〜１０質量％を含有することを特徴とする。 The lead-free solder alloy for bonding glass or ceramics according to the present invention is bismuth (Bi) 45-15 mass %, zinc (Zn) 5-10 mass %, antimony (Sb) 0.01-1 mass %, aluminum (Al ) 0.01-2 wt%, wherein the indium (an in) 0.5 to 30 wt%, the lead-free solder alloy having a composition the balance not containing lead composed of tin (Sn) and inevitably mixed impurities, further It contains 0.001 to 10% by mass of gallium (Ga).
また前記組成の溶融金属を、ガス雰囲気中で高速回転する皿型ディスク上に供給し、遠心場内にて溶融金属を小滴として飛散させ、強制的にガス雰囲気中で急冷して自己組織化させることによりナノコンポジット構造の金属粒子状である無鉛ハンダ合金粉末を製造することができる。ここで自己組織化とは、均一・均質相である溶融金属が、その制御された環境状況化での急速冷却固化過程で、粒径５００ｎｍ以下の球状粒子内にて均一、均質相を造り、自動的にナノコンポジット構造を形成することをいう。更に具体的には、例えば、球状粉体が微小粒子の集合体であって、個々の微小粒子内が均一・均質で粒径５００ｎｍ以下のクリスタル単一金属及びクリスタル合金化層または点在物、あるいは空隙により相互に隔離されているナノコンポジット構造を形成することをいう。
ガス雰囲気は、アルゴン、酸素、窒素、水素、ヘリウム又は金属蒸気を含むことができる。具体的には、後で説明するように、主にアルゴンガス（又はヘリウムガス）が用いられる。
In addition, the molten metal having the above composition is supplied onto a plate-type disk that rotates at high speed in a gas atmosphere, and the molten metal is scattered as small droplets in a centrifugal field, and is forcibly quenched in a gas atmosphere to be self-organized. As a result, a lead-free solder alloy powder in the form of metal particles having a nanocomposite structure can be produced. Here, self-organization means that a molten metal that is a homogeneous and homogeneous phase is a rapid cooling and solidification process under controlled environmental conditions, and a uniform and homogeneous phase is created in spherical particles having a particle size of 500 nm or less. This refers to automatically forming a nanocomposite structure. More specifically, for example, a spherical powder is an aggregate of fine particles, and each single fine particle is uniform / homogeneous and has a crystal single metal and crystal alloyed layer or dot having a particle size of 500 nm or less, Alternatively, it refers to forming nanocomposite structures that are separated from each other by voids.
The gas atmosphere can include argon, oxygen, nitrogen, hydrogen, helium or metal vapor. Specifically, as will be described later, argon gas (or helium gas) is mainly used.
人体に有害なＰｂを含有せず、かつ従来のＳｎ−Ｐｂ合金と同等の性能を有し、しかも 使用時は大気中でもリフロー出来、鉛フリー化に伴う設備費用の削減につながるガラス低温接合用無鉛ハンダ合金が得られる。 Lead-free glass for low temperature bonding that does not contain Pb harmful to the human body, has the same performance as conventional Sn-Pb alloys, and can be reflowed in the air when used, leading to reduction in equipment costs associated with lead-free operation A solder alloy is obtained.
本発明に関わる無鉛ハンダ合金の標準的な組成はアルミニウム（Ａｌ）０．１質量％、亜鉛（Ｚｎ）７．０質量％、アンチモン（Ｓｂ）０．３質量％、インジウム（Ｉｎ）３．０質量％、ビスマス（Ｂｉ）２５質量％をベースとし、ガリウム（Ｇａ）は０．０１〜１０質量％、錫（Ｓｎ）残りの質量％である。 The standard composition of the lead-free solder alloy according to the present invention is 0.1% by mass of aluminum (Al), 7.0% by mass of zinc (Zn), 0.3% by mass of antimony (Sb), and 3.0% of indium (In). Based on mass %, bismuth (Bi) 25 mass %, gallium (Ga) is 0.01 to 10 mass %, and tin (Sn) is the remaining mass %.
本発明に関わるガラス低温接合用無鉛ハンダ合金は、平均粒径が１００μｍ以下の粉末状であることが好ましい。 The lead-free solder alloy for low-temperature glass bonding according to the present invention is preferably in the form of a powder having an average particle size of 100 μm or less.
本発明のガラス低温接合用無鉛ハンダ合金の粉末を製造するのに好適な製造装置の一例を図１を参照して説明する。粒状化室１は上部が円筒状、下部がコーン状になっており、上部に蓋２を有する。蓋２の中心部には垂直にノズル３が挿入され、ノズル３の直下には皿形回転ディスク４が設けられている。符号５は皿形回転ディスク４を上下に移動可能に支持する機構である。また粒状化室１のコーン部分の下端には生成した粒子の排出管６が接続されている。ノズル３の上部は粒状化する金属を溶融する電気炉（高周波炉）７に接続されている。混合ガスタンク８で所定の成分に調整された雰囲気ガスは配管９及び配管１０により粒状化室１内部及び電気炉７上部にそれぞれ供給される。粒状化室１内の圧力は弁１１及び排気装置１２、電気炉７内の圧力は弁１３及び排気装置１４によりそれぞれ制御される。電気炉７の内圧を大気圧より若干高めに、粒状化室１の内圧を大気圧より若干低めに維持すれば、電気炉７で溶融した金属は差圧によりノズル３から皿形回転ディスク４上に供給される。供給された金属は皿形回転ディスク４による遠心力と回転軸沿いからの吹き上げ気流が作り出す平行気流環境遠心場内での作用で微細な液滴状になって飛散し、冷却されて固体粒子になる。生成した固体粒子は排出管６から自動フィルター１５に供給され分別される。符号１６は微粒子回収装置である。
An example of a production apparatus suitable for producing the powder of the lead-free solder alloy for low-temperature glass bonding of the present invention will be described with reference to FIG. The granulation chamber 1 has a cylindrical shape at the top and a cone shape at the bottom, and has a
高速回転体が円盤状又は円錐状の場合尚遠心場が無い場合は、溶融金属が回転体のどの位置に供給されるのかによって溶融金属にかかる遠心力が大きく異なるので、粒の揃った球状粉体を得にくい。だが回転シャフト下部から不活性ガスを吹き上げデスク下部に充て遠心力にて均一な気流を造り回転中心から２ｍ範囲内に遠心場を作り出す事にて高速回転する皿形ディスク上に供給した場合は、その皿形の周縁位置における均一な遠心力を受け粒の揃った小滴に分散して飛散する。飛散した小滴は遠心場雰囲気ガス中で急速に冷却し、固化した小粒となって落下し、回収される。 When the high-speed rotating body is disk-shaped or conical, if there is no centrifugal field, the centrifugal force applied to the molten metal varies greatly depending on the position of the molten metal supplied to the rotating body. Hard to get a body. However, when an inert gas is blown up from the lower part of the rotating shaft and filled into the lower part of the desk, a uniform air flow is created by centrifugal force, and a centrifugal field is created within the range of 2 m from the center of rotation to supply it on a dish-shaped disk that rotates at high speed. It receives a uniform centrifugal force at the peripheral edge of the dish and is dispersed and scattered into small droplets with uniform grains. The scattered droplets are rapidly cooled in a centrifugal field gas, fall as solidified particles, and are collected.
本発明者らは、上記のような装置を用いて溶融金属を粉末化する研究を行った結果、溶融金属は急速冷却固化中に自己組織化され、個々の微小粒子が金属酸化物、金属窒化物又は金属珪化物の層、点在物、或いはナノクリスタルにより相互に隔離されているナノコンポジット構造を有する金属粒子になること、及び原料金属の組成及び雰囲気ガスの種類によって、個々の微小粒子は、金属酸化物、金属窒化物又は金属珪化物の層、点在物、或いはナノクリスタルのいずれかにより相互に隔離されたものとなることを見いだした。 As a result of researches for powdering molten metal using the apparatus as described above, the molten metal is self-assembled during rapid cooling and solidification, and individual fine particles are converted into metal oxide and metal nitride. Depending on the material or metal silicide layer, the interstitial material, or the metal particles having a nanocomposite structure separated from each other by nanocrystals, and the composition of the source metal and the type of atmospheric gas, We have found that they are isolated from each other by either metal oxide, metal nitride or metal silicide layers, interspersed materials, or nanocrystals.
皿形ディスクの回転数が高くなるほど、得られた金属粒子の径は小さくなる。内径３５ｍｍ、深さ５ｍｍの皿形ディスクを用いた場合、平均粒径１００μｍ以下の粒子を得るためには毎分３０，０００回転以上とすることが望ましい。 The higher the number of revolutions of the dish-shaped disk, the smaller the diameter of the obtained metal particles. In the case of using a dish-shaped disk having an inner diameter of 35 mm and a depth of 5 mm, it is desirable that the rotation is 30,000 revolutions per minute or more to obtain particles having an average particle diameter of 100 μm or less.
粒状化室に供給する雰囲気ガスの温度は室温でよいが、長時間連続操業する場合には、溶融金属小滴の急冷効果を維持するため、粒状化室内温度が１００℃以下になるように通気量を制御することが望ましい。 The temperature of the atmospheric gas supplied to the granulation chamber may be room temperature, but in the case of continuous operation for a long time, in order to maintain the rapid cooling effect of the molten metal droplets, ventilate so that the granulation chamber temperature is 100 ° C. or less. It is desirable to control the amount.
亜鉛（Ｚｎ）７．０質量％、アンチモン（Ｓｂ）０．３質量％、インジウム（Ｉｎ）３．０質量％、ビスマス（Ｂｉ）２５質量％、アルミニウム（Ａｌ）０．１質量％を含有し、ガリウム（Ｇａ）含有量を０．０１〜１質量％の範囲で変化させ、錫（Ｓｎ）が残りの質量％である組成の無鉛ハンダ合金についてガラス接合力強度、固相、液相温度の測定を行った結果を表１に示す。ガリウムの添加により接着強度の向上が認められる。 Zinc (Zn) 7.0 wt%, antimony (Sb) 0.3 wt%, indium (an In) 3.0 wt%, bismuth (Bi) 25 wt%, aluminum (Al) containing 0.1 wt% In the lead-free solder alloy having a composition in which the content of gallium (Ga) is changed in the range of 0.01 to 1% by mass and tin (Sn) is the remaining mass %, the glass bonding strength, the solid phase, and the liquidus temperature The measurement results are shown in Table 1. Adhesion strength is improved by the addition of gallium.
図１に示した装置を使用し、アルゴンガス雰囲気中で、高速回転する内径３５ｍｍ、深さ５ｍｍの皿形ディスク上に、亜鉛（Ｚｎ）７．０質量％、アンチモン（Ｓｂ）０．３質量％、インジウム（Ｉｎ）３．０質量％、ビスマス（Ｂｉ）２５質量％、ガリウム（Ｇａ）０．０１〜１質量％、アルミニウム（Ａｌ）０．１質量％、および錫（Ｓｎ）残りの質量％なる組成の溶融金属を供給して強制的に作られた遠心場内に遠心力等により小滴として飛散させた溶融金属がその制御された環境状況化で急速冷却固化過程で強制的に自己組織化させられたナノコンポジット構造の金属粒子からなる球状金属粉末を得た。 球状粉末及び粉末内部の均質化・均一化をＳＥＭ像により確認した。 Using the apparatus shown in FIG. 1, in an argon gas atmosphere, high-speed rotating inner diameter 35 mm, a depth of 5mm on dished disk, zinc (Zn) 7.0 wt%, antimony (Sb) 0.3 Weight %, Indium (In) 3.0 mass %, bismuth (Bi) 25 mass %, gallium (Ga) 0.01-1 mass %, aluminum (Al) 0.1 mass%, and tin (Sn) remaining mass % Of the molten metal dispersed as droplets by centrifugal force etc. in the centrifuge created by supplying the molten metal with the composition of%. A spherical metal powder composed of metal particles having a nanocomposite structure was obtained. Homogenization and homogenization of the spherical powder and the inside of the powder were confirmed by SEM images.
比較例１：特開２０００−２４６４８３号公報に従ってＳｎ９０．３質量％、Ｚｎ８質量％、Ｂｉ１．５質量％の合金を得、さらにアトマイズして金属粉末を得た。ガラスに対しての接合強度測定を行った結果を表２に示す。 Comparative Example 1: JP Sn90.3 wt% according to JP 2000-246483, Zn8 mass%, to obtain a Bi1.5 weight% of the alloy, to obtain a further atomized to metal powder. Table 2 shows the results of the measurement of bonding strength to glass.
比較例２：特開平１１−７７３７０号に従ってＳｎ７０質量％、Ｂｉ２５質量％、Ｔｉ５質量％合金を作成しガラス接合力強度測定を行った結果を表２に示す。 Comparative Example 2: Sn70 wt% according to JP-A-11-77370, Bi25 mass%, the create a Ti5 wt% alloy results of glass bonding force strength measurements are shown in Table 2.
実施例２、比較例１、２より得られた金属粒子を用いて 、ソルダーペースト化しリフロー試験をし再凝固の結晶化比較にて接合強度特性を測定したところ、微細結晶化で接合融点温度の低融点化で溶け、尚再凝固にて微細結晶化で接合強度が増している比較結果が得られた。 Using the metal particles obtained from Example 2 and Comparative Examples 1 and 2, a solder paste was converted into a reflow test and the bonding strength characteristics were measured by re-solidification crystallization comparison. A comparative result was obtained in which the melting point was lowered and the bonding strength was increased by recrystallization and fine crystallization.
以上説明してきたように、本発明によれば、鉛フリー化に伴い低品質・高コスト化が避けられない状況を合金及び粉末の内部を結晶粒子均一・均質をナノ構造化した合金球状粉末ハンダ材として製造提供する事で高品質を保ち各部品の不良化を防ぎ尚低コストが達成出来た。 As described above, according to the present invention, the alloy spherical powder solder in which the inside of the alloy and the powder is made into a uniform and uniform nanostructured crystal structure in a situation where low quality and high cost are unavoidable with lead-free. By providing and manufacturing as a material, it was possible to maintain high quality, prevent defective parts, and achieve low costs.
１ 粒状化室
２ 蓋
３ ノズル
４ 回転ディスク
５ 回転ディスク支持機構
６ 粒子排出管
７ 電気炉
８ 混合ガスタンク
９ 配管
１０ 配管
１１ 弁
１２ 排気装置
１３ 弁
１４ 排気装置
１５ 自動フィルター
１６ 微粒子回収装置
DESCRIPTION OF SYMBOLS 1
Claims (4)
アルゴン及びヘリウムの内の少なくとも１種類よりなるガス雰囲気中で、前記無鉛ハンダ合金の組成でなる溶融金属を、高速回転する皿型ディスク上に供給し、遠心場内にて溶融金属を小滴として飛散させ、
ガス雰囲気中で強制的に急冷して自己組織化させ、ナノコンポジット構造の金属粒子を得ること、
を特徴とする、無鉛ハンダ合金粉末の製造方法。 A method for producing a lead-free solder alloy powder according to any one of claims 1 to 3,
In a gas atmosphere consisting of at least one of argon and helium, the molten metal composed of the lead-free solder alloy is supplied onto a high-speed rotating dish disk, and the molten metal is scattered as small droplets in the centrifugal field. Let
Forcibly quenching in a gas atmosphere and self-organizing to obtain metal particles with a nanocomposite structure,
A method for producing a lead-free solder alloy powder.
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Cited By (4)
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| CN102296208A (en) * | 2011-08-17 | 2011-12-28 | 天津百瑞杰焊接材料有限公司 | Lead-free low-temperature alloy for preparing fuse core of temperature fuse and preparation method thereof |
| JP6029222B1 (en) * | 2015-07-08 | 2016-11-24 | 有限会社 ナプラ | Metal particles, paste, molded body, and laminate |
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| KR101438897B1 (en) | 2012-08-13 | 2014-09-17 | 현대자동차주식회사 | Lead free solder composition for glass |
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| CN102296208A (en) * | 2011-08-17 | 2011-12-28 | 天津百瑞杰焊接材料有限公司 | Lead-free low-temperature alloy for preparing fuse core of temperature fuse and preparation method thereof |
| JP6029222B1 (en) * | 2015-07-08 | 2016-11-24 | 有限会社 ナプラ | Metal particles, paste, molded body, and laminate |
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| US10016848B2 (en) | 2015-07-08 | 2018-07-10 | Napra Co., Ltd. | Metal particles having intermetallic compound nano-composite structure crystal |
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| JP6038270B1 (en) * | 2015-12-22 | 2016-12-07 | 有限会社 ナプラ | Electronic equipment |
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| US9950496B2 (en) | 2016-07-05 | 2018-04-24 | Napra Co., Ltd. | Multi-layer preform sheet |
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| JP2006159278A (en) | 2006-06-22 |
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