JP5268247B2 - 4-aminofluorene compound and organic light-emitting device - Google Patents
4-aminofluorene compound and organic light-emitting device Download PDFInfo
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- JP5268247B2 JP5268247B2 JP2006315716A JP2006315716A JP5268247B2 JP 5268247 B2 JP5268247 B2 JP 5268247B2 JP 2006315716 A JP2006315716 A JP 2006315716A JP 2006315716 A JP2006315716 A JP 2006315716A JP 5268247 B2 JP5268247 B2 JP 5268247B2
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- -1 4-aminofluorene compound Chemical class 0.000 title claims abstract description 27
- 230000005525 hole transport Effects 0.000 claims description 60
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 claims description 19
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 14
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 14
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 14
- 125000001424 substituent group Chemical group 0.000 claims description 14
- 125000003118 aryl group Chemical group 0.000 claims description 13
- 125000006267 biphenyl group Chemical group 0.000 claims description 10
- 150000002894 organic compounds Chemical class 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 9
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 5
- ZHQNDEHZACHHTA-UHFFFAOYSA-N 9,9-dimethylfluorene Chemical group C1=CC=C2C(C)(C)C3=CC=CC=C3C2=C1 ZHQNDEHZACHHTA-UHFFFAOYSA-N 0.000 claims description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 4
- ZSPTYPRVZWOWHN-UHFFFAOYSA-N 2,7-ditert-butyl-9,9-dimethylfluorene Chemical group C1=C(C(C)(C)C)C=C2C(C)(C)C3=CC(C(C)(C)C)=CC=C3C2=C1 ZSPTYPRVZWOWHN-UHFFFAOYSA-N 0.000 claims description 2
- IHAIDMCQLSLIKW-UHFFFAOYSA-N 9-methylfluorene Chemical group C1=CC=C2[C](C)C3=CC=CC=C3C2=C1 IHAIDMCQLSLIKW-UHFFFAOYSA-N 0.000 claims description 2
- 150000002220 fluorenes Chemical group 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 abstract description 57
- 239000010410 layer Substances 0.000 description 108
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 45
- 239000000758 substrate Substances 0.000 description 34
- 239000010408 film Substances 0.000 description 26
- 239000000463 material Substances 0.000 description 22
- 230000032258 transport Effects 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 150000003512 tertiary amines Chemical group 0.000 description 10
- 229940126214 compound 3 Drugs 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 238000007740 vapor deposition Methods 0.000 description 9
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 125000003277 amino group Chemical group 0.000 description 6
- 239000012299 nitrogen atmosphere Substances 0.000 description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 238000006731 degradation reaction Methods 0.000 description 5
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 5
- 239000012044 organic layer Substances 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- 230000009477 glass transition Effects 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- ABRVLXLNVJHDRQ-UHFFFAOYSA-N [2-pyridin-3-yl-6-(trifluoromethyl)pyridin-4-yl]methanamine Chemical compound FC(C1=CC(=CC(=N1)C=1C=NC=CC=1)CN)(F)F ABRVLXLNVJHDRQ-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 2
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- ZEEBGORNQSEQBE-UHFFFAOYSA-N [2-(3-phenylphenoxy)-6-(trifluoromethyl)pyridin-4-yl]methanamine Chemical compound C1(=CC(=CC=C1)OC1=NC(=CC(=C1)CN)C(F)(F)F)C1=CC=CC=C1 ZEEBGORNQSEQBE-UHFFFAOYSA-N 0.000 description 2
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000021615 conjugation Effects 0.000 description 2
- 238000000113 differential scanning calorimetry Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000001989 lithium alloy Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000004949 mass spectrometry Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- WTAPZWXVSZMMDG-UHFFFAOYSA-N 1,5-diphenylpenta-1,4-dien-3-one;palladium Chemical compound [Pd].C=1C=CC=CC=1C=CC(=O)C=CC1=CC=CC=C1 WTAPZWXVSZMMDG-UHFFFAOYSA-N 0.000 description 1
- MKZHJJQCUIZEDE-UHFFFAOYSA-N 1-[(2-hydroxy-3-naphthalen-1-yloxypropyl)-propan-2-ylamino]-3-naphthalen-1-yloxypropan-2-ol Chemical compound C1=CC=C2C(OCC(O)CN(CC(O)COC=3C4=CC=CC=C4C=CC=3)C(C)C)=CC=CC2=C1 MKZHJJQCUIZEDE-UHFFFAOYSA-N 0.000 description 1
- DFZYPLLGAQIQTD-UHFFFAOYSA-N 2,7-ditert-butyl-9h-fluorene Chemical compound CC(C)(C)C1=CC=C2C3=CC=C(C(C)(C)C)C=C3CC2=C1 DFZYPLLGAQIQTD-UHFFFAOYSA-N 0.000 description 1
- XFWGSCNZZYLJJG-UHFFFAOYSA-N 4-bromo-9h-fluorene Chemical class C1C2=CC=CC=C2C2=C1C=CC=C2Br XFWGSCNZZYLJJG-UHFFFAOYSA-N 0.000 description 1
- NNHRVRJFHLVIIV-UHFFFAOYSA-N 9h-fluoren-4-amine Chemical class C1C2=CC=CC=C2C2=C1C=CC=C2N NNHRVRJFHLVIIV-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 238000004770 highest occupied molecular orbital Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001420 photoelectron spectroscopy Methods 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- STCOOQWBFONSKY-UHFFFAOYSA-N tributyl phosphate Chemical group CCCCOP(=O)(OCCCC)OCCCC STCOOQWBFONSKY-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C211/00—Compounds containing amino groups bound to a carbon skeleton
- C07C211/43—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton
- C07C211/57—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings being part of condensed ring systems of the carbon skeleton
- C07C211/61—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings being part of condensed ring systems of the carbon skeleton with at least one of the condensed ring systems formed by three or more rings
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/626—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing more than one polycyclic condensed aromatic rings, e.g. bis-anthracene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2603/00—Systems containing at least three condensed rings
- C07C2603/02—Ortho- or ortho- and peri-condensed systems
- C07C2603/04—Ortho- or ortho- and peri-condensed systems containing three rings
- C07C2603/06—Ortho- or ortho- and peri-condensed systems containing three rings containing at least one ring with less than six ring members
- C07C2603/10—Ortho- or ortho- and peri-condensed systems containing three rings containing at least one ring with less than six ring members containing five-membered rings
- C07C2603/12—Ortho- or ortho- and peri-condensed systems containing three rings containing at least one ring with less than six ring members containing five-membered rings only one five-membered ring
- C07C2603/18—Fluorenes; Hydrogenated fluorenes
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- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/10—Non-macromolecular compounds
- C09K2211/1003—Carbocyclic compounds
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- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/10—Non-macromolecular compounds
- C09K2211/1003—Carbocyclic compounds
- C09K2211/1014—Carbocyclic compounds bridged by heteroatoms, e.g. N, P, Si or B
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- Physics & Mathematics (AREA)
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- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Abstract
Description
本発明は、新規な４−アミノフルオレン化合物および有機発光素子に関する。 The present invention relates to a novel 4-aminofluorene compound and an organic light-emitting device.
有機発光素子は、陽極と陰極間に蛍光性有機化合物または燐光性有機化合物を含む薄膜を挟持させて、各電極からホール（正孔）及び電子を注入する。 In an organic light emitting device, a thin film containing a fluorescent organic compound or a phosphorescent organic compound is sandwiched between an anode and a cathode, and holes and electrons are injected from each electrode.
そして、蛍光性化合物または燐光性化合物の励起子を生成させ、この励起子が基底状態にもどる際に放射される光を利用する素子である。 Then, an element that generates excitons of a fluorescent compound or a phosphorescent compound and uses light emitted when the excitons return to the ground state.
有機発光素子における最近の進歩は著しく、その特徴は低印加電圧で高輝度、発光波長の多様性、高速応答性、薄型、軽量の発光デバイス化が可能であることから、広汎な用途への可能性を示唆している。 Recent advances in organic light-emitting devices are remarkable, and their features are high brightness, variety of emission wavelengths, high-speed response, low-profile, and lightweight light-emitting devices with low applied voltage, enabling wide-ranging applications Suggests sex.
しかしながら、現状では更なる高輝度の光出力あるいは高変換効率が必要である。また、長時間の使用による経時変化や酸素を含む雰囲気気体や湿気などによる劣化等の耐久性の面で未だ多くの問題がある。 However, under the present circumstances, light output with higher brightness or higher conversion efficiency is required. In addition, there are still many problems in terms of durability, such as changes over time due to long-term use and deterioration due to atmospheric gas containing oxygen or moisture.
さらにはフルカラーディスプレイ等への応用を考えた場合の色純度の良い青、緑、赤の発光が必要となるが、これらの問題に関してもまだ十分でない。
また、フルオレン化合物を用いた、材料および有機発光素子の例として、特許文献１乃至４が挙げられている。しかし、素子の外部量子効率は低く、耐久寿命は十分でない。
また、芳香族第三級アミン誘導体を用いた、材料および有機発光素子の例として、特許文献５乃至８が挙げられている。
Patent Documents 1 to 4 are given as examples of materials and organic light-emitting elements using a fluorene compound. However, the external quantum efficiency of the device is low and the durability life is not sufficient.
Further, Patent Documents 5 to 8 are given as examples of materials and organic light-emitting elements using an aromatic tertiary amine derivative.
本発明の目的は、新規な４−アミノフルオレン化合物を提供することにある。
また本発明の目的は、４−アミノフルオレン化合物を用い、極めて高効率で高輝度な光出力を有する有機発光素子を提供することにある。また、極めて耐久性のある有機発光素子を提供することにある。
さらには製造が容易でかつ比較的安価に作成可能な有機発光素子を提供する事にある。
An object of the present invention is to provide a novel 4-aminofluorene compound.
Another object of the present invention is to provide an organic light-emitting device using a 4-aminofluorene compound and having an extremely high efficiency and high luminance light output. Another object of the present invention is to provide an extremely durable organic light emitting device.
It is another object of the present invention to provide an organic light emitting device that is easy to manufacture and can be produced at a relatively low cost.
即ち、本発明によりは、
（１）下記一般式［Ｉ］で示されることを特徴とする４−アミノフルオレン化合物が提供される。
That is, according to the present invention,
(1) A 4-aminofluorene compound represented by the following general formula [I] is provided.
（式中、Ａｒ１は、２位または４位で結合する置換あるいは無置換のフルオレン基を表わす。Ａｒ２はアリール基を表わす。Ｒ１乃至Ｒ９はそれぞれ独立に水素原子、アルキル基、アリール基の中から選ばれる。
前記Ａｒ１で示される前記フルオレン基は、ハロゲン原子、メチル基、エチル基、プロピル基、ブチル基、ターシャリ―ブチル基を有してよいフェニル基、ビフェニル基、９，９−ジメチルフルオレン基、９，９−ジメチル−２，７−ジターシャリ―ブチルフルオレン基を置換基として有してよい。
前記Ｒ１乃至前記Ｒ９で示されるアルキル基は、メチル基、ターシャリブチル基のいずれかである。
前記Ａｒ２で示されるアリール基は、フェニル基、ビフェニル基、ターフェニル基、フルオレン基のいずれかである。
前記Ａｒ２で示されるフェニル基は、メチル基、ブチル基、９，９−メチルフルオレン基、メチル基またはターシャリ―ブチル基を有してよいフェニル基を置換基として有してよい。
前記Ａｒ２で示されるフルオレン基は、メチル基、エチル基、ターシャリ―ブチル基、９，９−ジメチルフルオレン基、９，９−ジメチル−２，７−ジターシャリ―ブチルフルオレン基を置換基として有してよい。
前記Ｒ１乃至前記Ｒ９で示されるアリール基は、フェニル基、ビフェニル基、ターフェニル基、フルオレン基のいずれかである。
前記アリール基は、メチル基、ターシャリブチル基、フェニル基、ビフェニル基を置換基として有してよい。）
(In the formula, Ar 1 represents a substituted or unsubstituted fluorene group bonded at the 2-position or 4-position. Ar 2 represents an aryl group. R 1 to R 9 each independently represents a hydrogen atom, an alkyl group, or an aryl group. Selected from the group.
The fluorene group represented by Ar1 includes a halogen atom, a methyl group, an ethyl group, a propyl group, a butyl group, a phenyl group that may have a tertiary butyl group , a biphenyl group, a 9,9-dimethylfluorene group, a 9, It may have a 9-dimethyl-2,7-ditertiary-butylfluorene group as a substituent .
The alkyl group represented by R1 to R9 is either a methyl group or a tertiary butyl group.
The aryl group represented by Ar2 is any one of a phenyl group, a biphenyl group, a terphenyl group, and a fluorene group.
The phenyl group represented by Ar2 may have a phenyl group which may have a methyl group, a butyl group, a 9,9-methylfluorene group, a methyl group or a tertiary butyl group as a substituent.
The fluorene group represented by Ar2 has a methyl group, ethyl group, tertiary-butyl group, 9,9-dimethylfluorene group, 9,9-dimethyl-2,7-ditertiary-butylfluorene group as a substituent. Good.
The aryl group represented by R1 to R9 is any one of a phenyl group, a biphenyl group, a terphenyl group, and a fluorene group.
The aryl group may have a methyl group, a tertiary butyl group, a phenyl group, or a biphenyl group as a substituent. )
本発明の一般式［Ｉ］で示される４−アミノフルオレン化合物は優れた発光特性を有する。またこの４−アミノフルオレン化合物を用いた有機発光素子は、低い印加電圧で高効率に発光する。また、優れた耐久性も得られる。 The 4-aminofluorene compound represented by the general formula [I] of the present invention has excellent light emission characteristics. Moreover, the organic light emitting device using this 4-aminofluorene compound emits light with high efficiency at a low applied voltage. Excellent durability is also obtained.
上記一般式［Ｉ］における化合物の置換基の具体例を以下に示す。
アルキル基としては、メチル基、ターシャリブチル基のいずれかである。
Specific examples of the substituent of the compound in the general formula [I] are shown below.
The alkyl group is either a methyl group or a tertiary butyl group.
アリール基としては、フェニル基、ビフェニル基、ターフェニル基、フルオレン基のいずれかである。 The aryl group is any one of a phenyl group , a biphenyl group, a terphenyl group, and a fluorene group.
前記アリール基が有してもよい置換基としては、メチル基、ターシャリブチル基、フェニル基、ビフェニル基、フルオレン基である。 Examples of the substituent that the aryl group may have include a methyl group , a tertiary butyl group, a phenyl group, a biphenyl group, and a fluorene group.
本発明のフルオレン化合物は、４−アミノフルオレン誘導体もしくは４−ブロモフルオレン誘導体を原料として合成できる。また、それらの原料は非特許文献１により合成できる。 The fluorene compound of the present invention can be synthesized using a 4-aminofluorene derivative or a 4-bromofluorene derivative as a raw material. Moreover, those raw materials can be synthesized by Non-Patent Document 1.
一般式［Ｉ］で示される４−アミノフルオレン化合物は有機発光素子用材料として使用できる。
その中で、一般式［Ｉ］で示される４−アミノフルオレン化合物はホール輸送層および発光層として用いることができる。そして高発光効率、高寿命素子を得ることができる。
The 4-aminofluorene compound represented by the general formula [I] can be used as a material for an organic light emitting device.
Among them, the 4-aminofluorene compound represented by the general formula [I] can be used as a hole transport layer and a light emitting layer. And a high luminous efficiency and long life element can be obtained.
また、一般式［Ｉ］で示されるフルオレン化合物は発光層として使用する場合、発光層において単独で用いること、及びドーパント（ゲスト）材料、蛍光材料及び燐光材料のホスト材料として用いることができ、高色純度、高発光効率、高寿命素子を得ることができる。 In addition, when the fluorene compound represented by the general formula [I] is used as a light emitting layer, it can be used alone in the light emitting layer and can be used as a host material for a dopant (guest) material, a fluorescent material and a phosphorescent material. A color purity, high luminous efficiency, and a long life element can be obtained.
一般式［１］で示される４−アミノフルオレン化合物は、フルオレン基の４位にアミノ基が置換することで、分子全体を非平面的に分子設計を可能にする。その為、４−アミノフルオレン化合物は実施例１２−３０、比較例に示すように、２−アミノフルオレン化合物に比べ、アモルファス性の高い分子を提供し、熱安定性が高く、高寿命素子を得ることができる。また、より好ましくは、フルオレン基の４位に置換した、アミノ基上の置換基（一般式［１］におけるＡｒ１及びＡｒ２）がフルオレン基である場合、さらに熱安定性が高くなる。さらに好ましくは、上記、アミノ基上の置換基Ａｒ１がフルオレン基でかつ、フルオレン基の４位でアミノ基上の窒素原子と結合する場合、分子全体の非平面性が増し、さらに熱安定性が高くなり、高寿命素子を得ることができる。 In the 4-aminofluorene compound represented by the general formula [1], the amino group is substituted at the 4-position of the fluorene group, whereby the entire molecule can be designed in a non-planar manner. Therefore, as shown in Examples 12-30 and Comparative Examples, the 4-aminofluorene compound provides molecules with higher amorphousness than the 2-aminofluorene compound, has high thermal stability, and obtains a long-life device. be able to. More preferably, when the substituent on the amino group (Ar 1 and Ar 2 in the general formula [1]) substituted at the 4-position of the fluorene group is a fluorene group, the thermal stability is further increased. More preferably, when the substituent Ar 1 on the amino group is a fluorene group and is bonded to the nitrogen atom on the amino group at the 4-position of the fluorene group, the non-planarity of the whole molecule is increased and the thermal stability is further increased. And a long-life element can be obtained.
また、非平面的な分子設計は、バンドギャップの広いホール輸送材料を提供し、発光層からホール輸送層への電子注入を阻止すること、発光層で生成する励起子のホール輸送層へのエネルギー移動を阻止することができる。そのため、高効率素子を得ることができる。 In addition, the non-planar molecular design provides a hole transport material with a wide band gap, prevents electron injection from the light emitting layer to the hole transport layer, and excitons generated in the light emitting layer energize the hole transport layer. The movement can be prevented. Therefore, a highly efficient element can be obtained.
フルオレン基やアミノ基に置換基を導入することで、ＨＯＭＯ／ＬＵＭＯレベルを容易に調節することが可能である。そのため、陽極から発光層へのホール注入及び輸送のバランスを考慮した、ホール輸送材料の分子設計が容易である。さらに、発光材料として青、緑、さらにより長波長側の発光色への変換が可能である。 By introducing a substituent into the fluorene group or amino group, the HOMO / LUMO level can be easily adjusted. Therefore, the molecular design of the hole transport material considering the balance of hole injection and transport from the anode to the light emitting layer is easy. Furthermore, it is possible to convert the light emitting material into blue, green, and even longer emission colors.
また、陽極及び陰極からなる一対の電極と、該一対の電極間に挟持された有機化合物を含有する一層または複数の層により構成される有機発光素子において、陽極からホール注入の向上が期待できる銅フタロシアニン（ＣｕＰｃ）やフッ化炭素（ＣＦｘ）等を含む層を含んでいてもよい。
本発明は、以上のような考察のもとに分子設計し、発明がなされたものである。
Further, in an organic light-emitting device composed of a pair of electrodes composed of an anode and a cathode, and one or more layers containing an organic compound sandwiched between the pair of electrodes, copper that can be expected to improve hole injection from the anode A layer containing phthalocyanine (CuPc), fluorocarbon (CFx), or the like may be included.
The present invention has been invented by molecular design based on the above considerations.
以下、本発明を詳細に説明する。
上記一般式［Ｉ］における化合物の具体例と参考例とを以下に示す。本発明に係る具体例は例示化合物１乃至４、８、１６、１７、１８、２７、２９、４６、５１、６１、６２、６８である。しかし、本発明はこれらに限定されるものではない。また、Ａｒ１およびＡｒ２にあげられる組み合わせは例示化合物１から６９の組み合わせのうち、どれを組み合わせてもよい。
Hereinafter, the present invention will be described in detail.
Specific examples and reference examples of the compound in the general formula [I] are shown below. Specific examples according to the present invention are exemplified compounds 1 to 4, 8, 16, 17, 18, 27, 29, 46, 51, 61, 62, and 68. However, the present invention is not limited to these. In addition, the combinations listed for Ar 1 and Ar 2 may be any combination of the combinations of exemplary compounds 1 to 69.
次に、本発明の有機発光素子について詳細に説明する。
本発明の有機発光素子は、陽極及び陰極からなる一対の電極と、該一対の電極間に挟持された有機化合物を含有する一層または複数の層により構成される有機発光素子において、前記有機化合物を含む層の少なくとも一層が一般式［Ｉ］で示される化合物の少なくとも一種を含有する。
Next, the organic light emitting device of the present invention will be described in detail.
The organic light-emitting device of the present invention is an organic light-emitting device comprising a pair of electrodes composed of an anode and a cathode, and one or more layers containing an organic compound sandwiched between the pair of electrodes. At least one of the layers to be contained contains at least one compound represented by the general formula [I].
また、本発明では、陽極及び陰極からなる一対の電極と、該一対の電極間に挟持された有機化合物を含有する複数の層により構成される有機発光素子において、有機発光層の陽極側に、前記発光層に隣接して前記第２ホール輸送層が積層され、さらに、前記第２ホール輸送層に隣接して前記第１ホール輸送層が更にもう一層積層している。ここで、第１及び第２ホール輸送層は、陽極から発光層へホールを輸送する能力に優れた層である。 Further, in the present invention, in an organic light emitting device composed of a pair of electrodes composed of an anode and a cathode and a plurality of layers containing an organic compound sandwiched between the pair of electrodes, on the anode side of the organic light emitting layer, The second hole transport layer is stacked adjacent to the light emitting layer, and the first hole transport layer is stacked further adjacent to the second hole transport layer. Here, the first and second hole transport layers are layers having excellent ability to transport holes from the anode to the light emitting layer.
一般的に、ホール輸送層を２層積層し、ｉ陽極界面に隣接する第１ホール輸送層では、陽極とイオン化ポテンシャルの近い材料を、ｉｉ発光層に隣接する第２ホール輸送層ではバンドギャップが広い材料をおのおの用いる。上記ｉ乃至ｉｉの層は、それぞれ下記ｉ’ｉｉ’に効果を発し、更に下記ｉ’’ｉｉ’’のデバイス特性をそれぞれ引き出すことができる。
ｉ’ 陽極から有機層へのホール注入性向上
ｉｉ’ 発光層内のキャリヤ及び励起子の閉じ込め
ｉ’’ 駆動電圧の低下
ｉｉ’’外部量子効率の向上
In general, two hole transport layers are stacked, and the first hole transport layer adjacent to the i anode interface has a material close to the ionization potential of the anode, and the second hole transport layer adjacent to the ii light emitting layer has a band gap. Each uses a wide range of materials. The layers i to ii have an effect on the following i′ii ′, respectively, and can further extract the device characteristics of the following i ″ ii ″.
i 'Improvement of hole injection from anode to organic layer ii' Confinement of carriers and excitons in the light-emitting layer i '' Decrease of driving voltage ii '' Improvement of external quantum efficiency
本発明では、第２ホール輸送層は、第三級アミンの骨格が１つ含まれる化合物を少なくとも１種類含有する。まず、第三級アミンの骨格を持つことでホール移動度を高めることができる。さらに、第三級アミン骨格数を１にすることで、共役長を短くし、バンドギャップを広げる分子設計に有用である。ここで、更に本発明の上記一般式［１］で表される４−アミノフルオレン化合物は、非平面的な分子形状を成しており、よりワイドバンドギャップな材料を得やすい。この為、発光層のキャリヤ及び励起子を発光層内に効果的に閉じ込めることができ、有機発光素子の外部量子効率向上および低電圧駆動に有効である。ここで、第２ホール輸送層はアミンの骨格が１つ含まれる化合物のみから構成されていてもよく、他の化合物を含んでいてもよい。 In the present invention, the second hole transport layer contains at least one compound containing one tertiary amine skeleton. First, hole mobility can be increased by having a tertiary amine skeleton. Furthermore, by setting the number of tertiary amine skeletons to 1, it is useful for molecular design that shortens the conjugation length and widens the band gap. Here, the 4-aminofluorene compound represented by the above general formula [1] of the present invention has a non-planar molecular shape, and it is easy to obtain a material having a wider band gap. For this reason, carriers and excitons of the light emitting layer can be effectively confined in the light emitting layer, which is effective for improving the external quantum efficiency of the organic light emitting device and driving at a low voltage. Here, the second hole transport layer may be composed of only a compound containing one amine skeleton, or may contain other compounds.
また、第１ホール輸送層は、第三級アミンの骨格が１つ含まれる化合物を少なくとも１種類含有する。第三級アミンの骨格数を１にすることで、２以上の化合物と比べ、分子量を低く設計し易く、蒸着性の良好な材料やワイドバンドギャップな材料の提供に有用である。ワイドバンドギャップな化合物を適用することは、発光層内に含まれる短波発光のドーパント（ゲスト）においても、その発光を阻害（再吸収）をすることなく、効率低下をもたらすことがない。また、第１ホール輸送層は非環状第三級アミンの骨格が１つ含まれる化合物のみから構成されていてもよく、他の化合物を含んでいてもよい。 The first hole transport layer contains at least one compound containing one tertiary amine skeleton. By setting the number of skeletons of the tertiary amine to 1, it is easy to design a molecular weight lower than that of two or more compounds, and is useful for providing a material having a good vapor deposition property and a wide band gap. Applying a compound having a wide band gap does not cause a decrease in efficiency without inhibiting (re-absorbing) the light emission even in the short wave light emitting dopant (guest) contained in the light emitting layer. The first hole transport layer may be composed of only a compound containing one acyclic tertiary amine skeleton, or may contain other compounds.
また、第１ホール輸送層と第２ホール輸送層は、少なくとも、非環状第三級アミンの骨格が１つ含まれる化合物、を含有することが好ましい。ここで、非環状第三級アミンとは、第三級アミンの置換基が互いに結合せず環を形成しない第三級アミンを表す。第三級アミンの置換基が互いに結合しないことで、分子構造の回転の自由度が増え、共役長が短い分子設計に有用である。第１ホール輸送層のバンドギャップを広げることで、上記と同様に再吸収を防ぐことができ、また、第２ホール輸送層のバンドギャップを広げることで、キャリヤ及び励起子を発光層内に効果的に閉じ込めることができる。 The first hole transport layer and the second hole transport layer preferably contain at least a compound containing one acyclic tertiary amine skeleton. Here, the acyclic tertiary amine represents a tertiary amine in which substituents of the tertiary amine are not bonded to each other to form a ring. Since the tertiary amine substituents are not bonded to each other, the degree of freedom of rotation of the molecular structure is increased, which is useful for molecular design with a short conjugate length. By widening the band gap of the first hole transport layer, re-absorption can be prevented in the same manner as described above, and by increasing the band gap of the second hole transport layer, carriers and excitons are effective in the light emitting layer. Can be confined.
また、前記第１ホール輸送層と２ホール輸送層を形成する化合物として、本発明の上記一般式［１］の４−アミノフルオレン化合物を含むことが好ましい。４−アミノフルオレン化合物は、第三級アミンに対しフルオレン基が４位に置換することで、他の化合物に比べ、立体障害性が高く共役長が短い。このため、よりバンドギャップが広く、なおかつガラス転移温度も高いホール輸送材料を得ることが出来る。さらに、第１ホール輸送層と第２ホール輸送層にガラス転移温度の高い材料を適用することで、素子の耐久性を向上させることができる。また、前記第２ホール輸送層に含まれる第三級アミンの窒素原子数が１の化合物のバンドギャップが、前記発光層に含まれる最も含有率の高い化合物のバンドギャップより広いことが好ましい。ここで、最も含有率の高い化合物の含有率とはｗｔ％で表す。具体的には、発光層がホストとゲストの場合には、ホストとなる場合が多い。前記バンドギャップの序列を満たすことで、前記発光層へのホール注入を増大し、前記第２ホール輸送層への電子漏れを効果的に低減させることが可能となる。バンドギャップの測定は、紫外−可視光吸収スペクトルから求めることができる。本発明においては、ガラス基板上に成膜した薄膜の吸収端から求めた。装置は日立製分光光度計Ｕ−３０１０を用いた。 Moreover, it is preferable that the 4-aminofluorene compound of the said General formula [1] of this invention is included as a compound which forms a said 1st hole transport layer and a 2 hole transport layer. The 4-aminofluorene compound has a high steric hindrance and a short conjugation length compared to other compounds by substituting the fluorene group at the 4-position with respect to the tertiary amine. For this reason, it is possible to obtain a hole transport material having a wider band gap and a higher glass transition temperature. Furthermore, the durability of the device can be improved by applying a material having a high glass transition temperature to the first hole transport layer and the second hole transport layer. Moreover, it is preferable that the band gap of the compound having 1 nitrogen atom in the tertiary amine contained in the second hole transport layer is wider than the band gap of the compound having the highest content contained in the light emitting layer. Here, the content rate of the compound with the highest content rate is expressed in wt%. Specifically, when the light emitting layer is a host and a guest, it is often the host. By satisfying the order of the band gap, it is possible to increase hole injection into the light emitting layer and effectively reduce electron leakage into the second hole transport layer. The measurement of the band gap can be obtained from the ultraviolet-visible light absorption spectrum. In this invention, it calculated | required from the absorption edge of the thin film formed into a film on the glass substrate. The apparatus used was a Hitachi spectrophotometer U-3010.
また、
前記第１ホール輸送層の含有率が最も高い化合物のイオン化ポテンシャルＩｐ１と
前記第２ホール輸送層の含有率が最も高い化合物のイオン化ポテンシャルＩｐ２と
前記発光層の含有率が最も高い化合物のイオン化ポテンシャルＩｐ３とが、
Ｉｐ１＜Ｉｐ２＜Ｉｐ３
を満たす素子構成が好ましい。
Also,
The ionization potential Ip1 of the compound having the highest content of the first hole transport layer, the ionization potential Ip2 of the compound having the highest content of the second hole transport layer, and the ionization potential Ip3 of the compound having the highest content of the light emitting layer And
Ip1 <Ip2 <Ip3
An element configuration that satisfies the above is preferable.
Ｉｐ２がＩｐ１とＩｐ３の中間値をとることで、一部の界面で極端に大きな注入障壁を生じることなく、陽極から発光層への正孔注入を増加させることが可能となる。そこで、イオン化ポテンシャルが上記関係式の素子構成を形成することにより、低電圧化を効果的に行うことができる。ここでイオン化ポテンシャルは、大気下光電子分光手法（測定器名ＡＣ−１ 理研機器製）を用いて測定した。 When Ip2 takes an intermediate value between Ip1 and Ip3, hole injection from the anode to the light-emitting layer can be increased without causing an extremely large injection barrier at some interfaces. Therefore, by forming an element configuration in which the ionization potential has the above relational expression, it is possible to effectively reduce the voltage. Here, the ionization potential was measured using a photoelectron spectroscopy method (measuring instrument name AC-1 manufactured by Riken Kikai Co., Ltd.) under the atmosphere.
図１〜４に本発明の有機発光素子の好ましい例を示す。
図１は、本発明の有機発光素子の一例を示す断面図である。図１は、基板１上に、陽極２、発光層３及び陰極４を順次設けた構成のものである。ここで使用する発光素子は、それ自体でホール輸送能、電子輸送能及び発光性の性能を単一で有している場合や、それぞれの特性を有する化合物を混ぜて使う場合に有用である。
1-4 show preferred examples of the organic light-emitting device of the present invention.
FIG. 1 is a cross-sectional view showing an example of the organic light emitting device of the present invention. FIG. 1 shows a structure in which an anode 2, a light emitting layer 3 and a cathode 4 are sequentially provided on a substrate 1. The light-emitting element used here is useful when it has a single hole-transporting ability, electron-transporting ability, and light-emitting performance by itself, or when a compound having each characteristic is used in combination.
図２は、本発明の有機発光素子における他の例を示す断面図である。図２は、基板１上に、陽極２、ホール輸送層５、電子輸送層６及び陰極４を順次設けた構成のものである。この場合は、発光物質はホール輸送性かあるいは電子輸送性のいずれか、あるいは両方の機能を有している材料をそれぞれの層に用い、発光性の無い単なるホール輸送物質あるいは電子輸送物質と組み合わせて用いる場合に有用である。また、この場合、発光層３は、ホール輸送層５あるいは電子輸送層６のいずれかから成る。 FIG. 2 is a cross-sectional view showing another example of the organic light emitting device of the present invention. FIG. 2 shows a configuration in which an anode 2, a hole transport layer 5, an electron transport layer 6 and a cathode 4 are sequentially provided on a substrate 1. In this case, the light emitting material is either a hole transporting property or an electron transporting property, or a material having both functions is used for each layer, and it is combined with a simple hole transporting material or an electron transporting material having no light emitting property. This is useful when used. In this case, the light emitting layer 3 is composed of either the hole transport layer 5 or the electron transport layer 6.
図３は、本発明の有機発光素子における他の例を示す断面図である。図３は、基板１上に、陽極２、ホール輸送層５、発光層３，電子輸送層６及び陰極４を順次設けた構成のものである。これは、キャリヤ輸送と発光の機能を分離したものである。そしてホール輸送性、電子輸送性、発光性の各特性を有した化合物と適時組み合わせて用いることができる。そして極めて材料選択の自由度が増すとともに、発光波長を異にする種々の化合物が使用できるため、発光色相の多様化が可能になる。さらに、中央の発光層３に各キャリヤあるいは励起子を有効に閉じこめて、発光効率の向上を図ることも可能になる。 FIG. 3 is a cross-sectional view showing another example of the organic light emitting device of the present invention. FIG. 3 shows a structure in which an anode 2, a hole transport layer 5, a light emitting layer 3, an electron transport layer 6 and a cathode 4 are sequentially provided on a substrate 1. This separates the functions of carrier transport and light emission. And it can use in combination with the compound which has each characteristic of hole transport property, electron transport property, and luminescent property timely. In addition, the degree of freedom of material selection is greatly increased, and various compounds having different emission wavelengths can be used, so that the emission hue can be diversified. Further, it is possible to effectively confine each carrier or exciton in the central light emitting layer 3 to improve the light emission efficiency.
図４は本発明の有機発光素子における他の例を示す断面図である。ホール輸送層が単層の図３に対して第１ホール輸送層５−１と第２ホール輸送層５−２を２層積層した構造であり、ホール注入と発光層への輸送に優れキャリヤ及び励起子漏れを効果的に閉じこめて、発光効率の向上と低電圧駆動を図ることが可能になる。 FIG. 4 is a cross-sectional view showing another example of the organic light emitting device of the present invention. The hole transport layer has a structure in which two layers of the first hole transport layer 5-1 and the second hole transport layer 5-2 are laminated with respect to FIG. It is possible to effectively confine exciton leakage to improve luminous efficiency and drive at a low voltage.
本発明における一般式［Ｉ］で表わされる化合物を含むホール（正孔）輸送領域とは、上記のホール輸送層５等、おもにホールを注入・輸送する領域を言う。 The hole (hole) transport region containing the compound represented by the general formula [I] in the present invention refers to a region that mainly injects and transports holes, such as the hole transport layer 5 described above.
ただし、図１〜図４はあくまでごく基本的な素子構成であり、本発明の化合物を用いた有機発光素子の構成はこれらに限定されるものではない。例えば、電極と有機層界面に絶縁性層を設ける、接着層あるいは干渉層を設ける、など多様な層構成をとることができる。 However, FIGS. 1 to 4 are very basic device configurations, and the configuration of the organic light-emitting device using the compound of the present invention is not limited thereto. For example, various layer configurations such as providing an insulating layer at the interface between the electrode and the organic layer, or providing an adhesive layer or an interference layer can be employed.
本発明に用いられる一般式［Ｉ］で示される化合物は、図１〜図４のいずれの形態でも使用することができる。 The compound represented by the general formula [I] used in the present invention can be used in any form of FIGS.
特に、本発明の化合物を用いた有機層は、発光層、あるいはホール注入輸送層として有用であり、また真空蒸着法や溶液塗布法などによって形成した層は結晶化などが起こりにくく経時安定性に優れている。 In particular, an organic layer using the compound of the present invention is useful as a light-emitting layer or a hole injecting and transporting layer, and a layer formed by a vacuum deposition method or a solution coating method is less likely to be crystallized and is stable over time. Are better.
本発明は、特に発光層の構成成分として、一般式［Ｉ］で示される化合物を用いるが、必要に応じてこれまで知られている低分子系およびポリマー系のホール輸送化合物、発光化合物あるいは電子輸送化合物などを一緒に使用することもできる。 In the present invention, the compound represented by the general formula [I] is used as a constituent component of the light emitting layer, and the low molecular weight and polymer type hole transport compounds, light emitting compounds or electrons known so far are used as necessary. A transport compound or the like can also be used together.
本発明で用いる基板としては、特に限定するものではないが、金属製基板、セラミックス製基板等の不透明性基板、ガラス、石英、プラスチックシート等の透明性基板が用いられる。 Although it does not specifically limit as a board | substrate used by this invention, Transparent substrates, such as opaque board | substrates, such as a metal board | substrate and a ceramic board | substrate, glass, quartz, a plastic sheet, are used.
また、基板にカラーフィルター膜、蛍光色変換フィルター膜、誘電体反射膜などを用いて発色光をコントロールする事も可能である。また、基板上に薄膜トランジスタ（ＴＦＴ）を作成し、それに接続して素子を作成することも可能である。 It is also possible to control the color light by using a color filter film, a fluorescent color conversion filter film, a dielectric reflection film, or the like on the substrate. It is also possible to create a thin film transistor (TFT) on a substrate and connect it to create an element.
また、素子の光取り出し方向に関しては、ボトムエミッション構成（基板側から光を取り出す構成）および、トップエミッション（基板の反対側から光を取り出す構成）のいずれも可能である。 Further, regarding the light extraction direction of the element, either a bottom emission configuration (configuration in which light is extracted from the substrate side) or a top emission (configuration in which light is extracted from the opposite side of the substrate) is possible.
以下、実施例により本発明をさらに具体的に説明していくが、本発明はこれらに限定されるものではない。 EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples, but the present invention is not limited to these examples.
＜実施例１＞
例示化合物３の合成
ａ）中間体化合物１−１の合成
中間体は２，７−ジターシャリブチルフルオレン（シグマアルドリッチ社）を原料にして製造できる。［非特許文献１］さらに、ジメチル化することで中間体１−１が得られる。
<Example 1>
Synthesis of Exemplary Compound 3 a) Synthesis of Intermediate Compound 1-1 The intermediate can be produced using 2,7-ditertiarybutylfluorene (Sigma Aldrich) as a raw material. [Non-Patent Document 1] Further, intermediate 1-1 is obtained by dimethylation.
ｂ）例示化合物３の合成 b) Synthesis of Exemplary Compound 3
２００ｍｌ三ツ口フラスコを用意した。そこに化合物１−１、４．５６ｇ（１２．０ｍｍｏｌ）を入れた。また化合物１−２、０．８２８ｇ（４．００ｍｍｏｌ）、ナトリウムターシャリブトキシド０．９６ｇ（１０．０ｍｍｏｌを入れた。さらにキシレン１００ｍｌを入れ、窒素雰囲気中、室温で攪拌下、トリターシャリブチルフォスフィン３４．４ｍｇ（０．１７ｍｍｏｌ）を添加した。次いでパラジウムジベンジリデンアセトン４８．９ｍｇ（０．０８５ｍｍｏｌ）を添加した。１２５度に昇温し３時間攪拌した。反応後有機層をトルエンで抽出し無水硫酸ナトリウムで乾燥後、シリカゲルカラム（ヘプタン＋トルエン混合展開溶媒）で精製し、例示化合物３（白色結晶）２．５３ｇ（収率７８．０％）を得た。 A 200 ml three-necked flask was prepared. The compound 1-1 and 4.56g (12.0 mmol) were put there. Further, Compound 1-2, 0.828 g (4.00 mmol), and sodium tertiary riboxide 0.96 g (10.0 mmol) were added. Further, 100 ml of xylene was added, and tritertiary butyl phosphate was stirred at room temperature in a nitrogen atmosphere. 34.4 mg (0.17 mmol) of fins were added, followed by 48.9 mg (0.085 mmol) of palladium dibenzylideneacetone, and the mixture was heated to 125 ° C. and stirred for 3 hours, after which the organic layer was extracted with toluene. After drying over anhydrous sodium sulfate, the residue was purified by a silica gel column (heptane + toluene mixed developing solvent) to obtain 2.53 g (yield 78.0%) of Exemplary Compound 3 (white crystals).
質量分析法により、この化合物のＭ＋である８１７．５を確認した。また、ＤＳＣ示差走査熱量分析法により、融点２６７℃及びガラス転移点１４３℃を確認した。 By mass spectrometry, 817.5 which was M + of this compound was confirmed. Further, a melting point of 267 ° C. and a glass transition point of 143 ° C. were confirmed by DSC differential scanning calorimetry.
＜実施例２〜１１＞
［例示化合物１、２、４、８、１６、１７、１８、２７、２９、４６の合成］
実施例１と同様にして、化合物１−１、及び１−２に変えて以下の表１に示す、臭素体、及びアミノ体を用いることで合成できる。
<Examples 2 to 11>
[Synthesis of Exemplified Compounds 1, 2, 4, 8, 16, 17, 18, 27, 29, 46]
It can synthesize | combine similarly to Example 1 by using the bromine body and amino body which are changed into the compound 1-1 and 1-2 and shown in the following Table 1.
＜実施例１２〜１５＞
［例示化合物５１、６１、６２、６８の合成］
実施例１と同様にして、化合物１−１、及び１−２に変えて以下の表２に示す、臭素体、及びアミノ体を用いることで合成した。
<Examples 12 to 15>
[Synthesis of Exemplified Compounds 51, 61, 62, and 68]
In the same manner as in Example 1, it was synthesized by using bromine and amino compounds shown in Table 2 below instead of compounds 1-1 and 1-2.
質量分析法により、それぞれの化合物の構造を確認した。また、ＤＳＣ示差走査熱量分析法により測定した、ガラス転移温度を表２に示す。 The structure of each compound was confirmed by mass spectrometry. Table 2 shows the glass transition temperatures measured by DSC differential scanning calorimetry.
＜実施例１６＞
図３に示す構造の有機発光素子を以下に示す方法で作成した。
<Example 16>
An organic light emitting device having the structure shown in FIG. 3 was prepared by the following method.
基板１としてのガラス基板上に、陽極２としての酸化錫インジウム（ＩＴＯ）をスパッタ法にて１２０ｎｍの膜厚で成膜したものを透明導電性支持基板として用いた。これをアセトン、イソプロピルアルコール（ＩＰＡ）で順次超音波洗浄し、次いでＩＰＡで煮沸洗浄後乾燥した。さらに、ＵＶ／オゾン洗浄したものを透明導電性支持基板として使用した。 What formed indium tin oxide (ITO) as an anode 2 with a film thickness of 120 nm on a glass substrate as a substrate 1 by a sputtering method was used as a transparent conductive support substrate. This was ultrasonically washed successively with acetone and isopropyl alcohol (IPA), then boiled and washed with IPA and then dried. Furthermore, what was UV / ozone cleaned was used as a transparent conductive support substrate.
ホール輸送層５として例示化合物３を用いて、真空蒸着法にて２０ｎｍの膜厚に形成した。蒸着時の真空度は１．０×１０−４Ｐａ、成膜速度は０．１ｎｍ／ｓｅｃの条件であった。 The exemplified compound 3 was used as the hole transport layer 5 and formed to a thickness of 20 nm by a vacuum deposition method. The degree of vacuum during vapor deposition was 1.0 × 10 −4 Pa, and the film formation rate was 0.1 nm / sec.
次に、ホール輸送層５の上に発光層として下記に示す化合物２−１を蒸着して２０ｎｍの発光層３を設けた。蒸着時の真空度は１．０×１０−４Ｐａ、成膜速度は０．１ｎｍ／ｓｅｃの条件で成膜した。 Next, the compound 2-1 shown below was vapor-deposited as a light emitting layer on the hole transport layer 5, and the 20 nm light emitting layer 3 was provided. The degree of vacuum during vapor deposition was 1.0 × 10 −4 Pa, and the film formation rate was 0.1 nm / sec.
更に電子輸送層６としてバソフェナントロリン（ＢＰｈｅｎ）を真空蒸着法にて４０ｎｍの膜厚に形成した。蒸着時の真空度は１．０×１０−４Ｐａ、成膜速度は０．２〜０．３ｎｍ／ｓｅｃの条件であった。 Further, bathophenanthroline (BPhen) was formed as an electron transport layer 6 to a thickness of 40 nm by a vacuum deposition method. The degree of vacuum during vapor deposition was 1.0 × 10 −4 Pa, and the film formation rate was 0.2 to 0.3 nm / sec.
次に、アルミニウム−リチウム合金（リチウム濃度１原子％）からなる蒸着材料を用いて、先ほどの有機層の上に、真空蒸着法により厚さ０．５ｎｍの金属層膜を形成した。更に真空蒸着法により厚さ１５０ｎｍのアルミニウム膜を設けた。そのようにしてアルミニウム−リチウム合金膜を電子注入電極（陰極４）とする有機発光素子を作成した。蒸着時の真空度は１．０×１０−４Ｐａ、成膜速度は１．０〜１．２ｎｍ／ｓｅｃの条件で成膜した。 Next, a metal layer film having a thickness of 0.5 nm was formed on the organic layer using a vapor deposition material made of an aluminum-lithium alloy (lithium concentration: 1 atomic%) by a vacuum vapor deposition method. Further, an aluminum film having a thickness of 150 nm was provided by vacuum deposition. In this way, an organic light emitting device using an aluminum-lithium alloy film as an electron injection electrode (cathode 4) was prepared. The degree of vacuum at the time of vapor deposition was 1.0 × 10 −4 Pa, and the film formation rate was 1.0 to 1.2 nm / sec.
得られた有機ＥＬ素子は、水分の吸着によって素子劣化が起こらないように、乾燥空気雰囲気中で保護用ガラス板をかぶせ、アクリル樹脂系接着材で封止した。 The obtained organic EL device was covered with a protective glass plate in a dry air atmosphere and sealed with an acrylic resin adhesive so that the device did not deteriorate due to moisture adsorption.
この様にして得られた素子に、ＩＴＯ電極（陽極２）を正極、Ａｌ電極（陰極４）を負極にして、４．０Ｖの印加電圧で、発光輝度３０４５ｃｄ／ｍ２、中心波長４６２ｎｍの青色発光が観測された。 The element obtained in this way was blue with an emission voltage of 3045 cd / m 2 and a center wavelength of 462 nm at an applied voltage of 4.0 V, with the ITO electrode (anode 2) as the positive electrode and the Al electrode (cathode 4) as the negative electrode. Luminescence was observed.
さらに、窒素雰囲気下で電流密度を３０ｍＡ／ｃｍ２に保ち、電圧を印加したところ、初期輝度に対する１００時間後の輝度劣化は小さかった。 Furthermore, when a current density was maintained at 30 mA / cm 2 under a nitrogen atmosphere and a voltage was applied, the luminance degradation after 100 hours with respect to the initial luminance was small.
＜実施例１７−２６＞
実施例１６のホール輸送層３である例示化合物３に代えて、表１、２に示す化合物を用いた他は実施例１６と同様に素子を作成し、同様な評価を行ったところ、いずれの素子においても発光を確認した。
<Example 17-26>
A device was prepared in the same manner as in Example 16 except that the compounds shown in Tables 1 and 2 were used in place of the exemplified compound 3 which is the hole transport layer 3 of Example 16, and the same evaluation was performed. Light emission was also confirmed in the device.
＜比較例１−２＞
例示化合物３に代えて、下記に示す比較化合物４−１、４−２を用いた他は実施例１６と同様に素子を作成し、同様な評価を行ったところ、発光を確認できなかった。
<Comparative Example 1-2>
A device was prepared in the same manner as in Example 16 except that Comparative compounds 4-1 and 4-2 shown below were used in place of the exemplified compound 3, and the same evaluation was performed. As a result, no light emission could be confirmed.
＜実施例２７＞
図４に示す構造の有機発光素子を以下に示す方法で作成した。
<Example 27>
An organic light emitting device having the structure shown in FIG. 4 was prepared by the following method.
基板１としてのガラス基板上に、陽極２としての酸化錫インジウム（ＩＴＯ）をスパッタ法にて１２０ｎｍの膜厚で成膜したものを透明導電性支持基板として用いた。これをアセトン、イソプロピルアルコール（ＩＰＡ）で順次超音波洗浄し、次いでＩＰＡで煮沸洗浄後乾燥した。さらに、ＵＶ／オゾン洗浄したものを透明導電性支持基板として使用した。 What formed indium tin oxide (ITO) as an anode 2 with a film thickness of 120 nm on a glass substrate as a substrate 1 by a sputtering method was used as a transparent conductive support substrate. This was ultrasonically washed successively with acetone and isopropyl alcohol (IPA), then boiled and washed with IPA and then dried. Furthermore, what was UV / ozone cleaned was used as a transparent conductive support substrate.
第１ホール輸送層５−１として例示化合物１を用いて、濃度が０．１ｗｔ％となるようにクロロホルム溶液を調整した。 Using Example Compound 1 as the first hole transport layer 5-1, a chloroform solution was prepared so that the concentration was 0.1 wt%.
この溶液を上記のＩＴＯ電極上に滴下し、最初に５００ＲＰＭの回転で１０秒、次に１０００ＲＰＭの回転で１分間スピンコートを行い膜形成した。この後１０分間、８０℃の真空オーブンで乾燥し、薄膜中の溶剤を完全に除去した。形成された第１ホール輸送層５−１の厚みは１１ｎｍであった。 This solution was dropped on the ITO electrode, and a film was formed by spin coating first at a rotation of 500 RPM for 10 seconds and then at a rotation of 1000 RPM for 1 minute. Thereafter, the film was dried in a vacuum oven at 80 ° C. for 10 minutes to completely remove the solvent in the thin film. The thickness of the formed first hole transport layer 5-1 was 11 nm.
次に、第１ホール輸送層５−１の上に例示化合物３を蒸着して２０ｎｍの正孔輸送層５−２を設けた。蒸着時の真空度は１．０×１０−４Ｐａ、成膜速度は０．１ｎｍ／ｓｅｃの条件で成膜した。 Next, the exemplary compound 3 was vapor-deposited on the 1st hole transport layer 5-1, and the 20 nm hole transport layer 5-2 was provided. The degree of vacuum during vapor deposition was 1.0 × 10 −4 Pa, and the film formation rate was 0.1 nm / sec.
更に発光層、電子輸送層及びＡｌ電極は実施例１６と同様に作成した。 Further, the light emitting layer, the electron transport layer and the Al electrode were prepared in the same manner as in Example 16.
この様にして得られた素子に、ＩＴＯ電極（陽極２）を正極、Ａｌ電極（陰極４）を負極にして、４．０Ｖの印加電圧で、発光輝度２９０８ｃｄ／ｍ２、中心波長４６４ｎｍの青色発光が観測された。 The element thus obtained was blue with an emission voltage of 2908 cd / m 2 and a center wavelength of 464 nm at an applied voltage of 4.0 V using the ITO electrode (anode 2) as the positive electrode and the Al electrode (cathode 4) as the negative electrode. Luminescence was observed.
さらに、窒素雰囲気下で電流密度を３０ｍＡ／ｃｍ２に保ち、電圧を印加したところ、初期輝度に対する１００時間後の輝度劣化は小さかった。 Furthermore, when a current density was maintained at 30 mA / cm 2 under a nitrogen atmosphere and a voltage was applied, the luminance degradation after 100 hours with respect to the initial luminance was small.
＜実施例２８＞
図３に示す構造の有機発光素子を以下に示す方法で作成した。
基板１としてのガラス基板上に、陽極２としての酸化錫インジウム（ＩＴＯ）をスパッタ法にて１２０ｎｍの膜厚で成膜したものを透明導電性支持基板として用いた。これをアセトン、イソプロピルアルコール（ＩＰＡ）で順次超音波洗浄し、次いでＩＰＡで煮沸洗浄後乾燥した。さらに、ＵＶ／オゾン洗浄したものを透明導電性支持基板として使用した。
<Example 28>
An organic light emitting device having the structure shown in FIG. 3 was prepared by the following method.
What formed indium tin oxide (ITO) as an anode 2 with a film thickness of 120 nm on a glass substrate as a substrate 1 by a sputtering method was used as a transparent conductive support substrate. This was ultrasonically washed successively with acetone and isopropyl alcohol (IPA), then boiled and washed with IPA and then dried. Furthermore, what was UV / ozone cleaned was used as a transparent conductive support substrate.
ホール輸送層５として例示化合物８を用いて、濃度が０．１ｗｔ％となるようにクロロホルム溶液を調整した。 Using Example Compound 8 as the hole transport layer 5, a chloroform solution was prepared so that the concentration was 0.1 wt%.
この溶液を上記のＩＴＯ電極上に滴下し、最初に５００ＲＰＭの回転で１０秒、次に１０００ＲＰＭの回転で１分間スピンコートを行い膜形成した。この後１０分間、８０℃の真空オーブンで乾燥し、薄膜中の溶剤を完全に除去した。形成されたホール輸送層５の厚みは１２ｎｍであった。 This solution was dropped on the ITO electrode, and a film was formed by spin coating first at a rotation of 500 RPM for 10 seconds and then at a rotation of 1000 RPM for 1 minute. Thereafter, the film was dried in a vacuum oven at 80 ° C. for 10 minutes to completely remove the solvent in the thin film. The formed hole transport layer 5 had a thickness of 12 nm.
次に化合物５−２に対し化合物５−１を５ｗｔ％の割合で共蒸着して２５ｎｍの発光層４を設けた。
更に、電子輸送層及びＡｌ電極は実施例１６と同様に作成した。
Next, Compound 5-1 was co-evaporated at a ratio of 5 wt% with respect to Compound 5-2 to provide a 25 nm light-emitting layer 4.
Further, the electron transport layer and the Al electrode were prepared in the same manner as in Example 16.
この様にして得られた素子に、ＩＴＯ電極（陽極２）を正極、Ａｌ電極（陰極４）を負極にして、４．０Ｖの印加電圧で、電流密度３．９ｍＡ／ｃｍ２，発光輝度４０８ｃｄ／ｍ２の青色発光が観測された。 In the device thus obtained, with an ITO electrode (anode 2) as a positive electrode and an Al electrode (cathode 4) as a negative electrode, with an applied voltage of 4.0 V, a current density of 3.9 mA / cm 2 and a light emission luminance of 408 cd / Blue emission of m 2 was observed.
さらに、窒素雰囲気下で電流密度を３０ｍＡ／ｃｍ２に保ち、電圧を印加したところ、初期輝度に対する１００時間後の輝度劣化は小さかった。 Furthermore, when a current density was maintained at 30 mA / cm 2 under a nitrogen atmosphere and a voltage was applied, the luminance degradation after 100 hours with respect to the initial luminance was small.
＜実施例２９＞
図３に示す構造の有機発光素子を以下に示す方法で作成した。
基板１としてのガラス基板上に、陽極２としての酸化錫インジウム（ＩＴＯ）をスパッタ法にて１２０ｎｍの膜厚で成膜したものを透明導電性支持基板として用いた。これをアセトン、イソプロピルアルコール（ＩＰＡ）で順次超音波洗浄し、次いでＩＰＡで煮沸洗浄後乾燥した。さらに、ＵＶ／オゾン洗浄したものを透明導電性支持基板として使用した。
<Example 29>
An organic light emitting device having the structure shown in FIG. 3 was prepared by the following method.
What formed indium tin oxide (ITO) as an anode 2 with a film thickness of 120 nm on a glass substrate as a substrate 1 by a sputtering method was used as a transparent conductive support substrate. This was ultrasonically washed successively with acetone and isopropyl alcohol (IPA), then boiled and washed with IPA and then dried. Furthermore, what was UV / ozone cleaned was used as a transparent conductive support substrate.
ホール輸送層５として例示化合物３を用いて、濃度が０．１ｗｔ％となるようにクロロホルム溶液を調整した。 Using Example Compound 3 as the hole transport layer 5, a chloroform solution was prepared so that the concentration was 0.1 wt%.
この溶液を上記のＩＴＯ電極上に滴下し、最初に５００ＲＰＭの回転で１０秒、次に１０００ＲＰＭの回転で１分間スピンコートを行い膜形成した。この後１０分間、８０℃の真空オーブンで乾燥し、薄膜中の溶剤を完全に除去した。形成されたホール輸送層５の厚みは１１ｎｍであった。 This solution was dropped on the ITO electrode, and a film was formed by spin coating first at a rotation of 500 RPM for 10 seconds and then at a rotation of 1000 RPM for 1 minute. Thereafter, the film was dried in a vacuum oven at 80 ° C. for 10 minutes to completely remove the solvent in the thin film. The formed hole transport layer 5 had a thickness of 11 nm.
次に化合物５−２に対し化合物５−１を５ｗｔ％の割合で共蒸着して２５ｎｍの発光層４を設けた。 Next, Compound 5-1 was co-evaporated at a ratio of 5 wt% with respect to Compound 5-2 to provide a 25 nm light-emitting layer 4.
更に、電子輸送層及びＡｌ電極は実施例１６と同様に作成した。
この様にして得られた素子に、ＩＴＯ電極（陽極２）を正極、Ａｌ電極（陰極４）を負極にして、４．０Ｖの印加電圧で、電流密度３．６ｍＡ／ｃｍ２，発光輝度４２５ｃｄ／ｍ２の青色発光が観測された。
Further, the electron transport layer and the Al electrode were prepared in the same manner as in Example 16.
The device obtained in this way has an ITO electrode (anode 2) as a positive electrode and an Al electrode (cathode 4) as a negative electrode, with an applied voltage of 4.0 V, a current density of 3.6 mA / cm2, and a light emission luminance of 425 cd / Blue emission of m 2 was observed.
さらに、窒素雰囲気下で電流密度を３０ｍＡ／ｃｍ２に保ち、電圧を印加したところ、初期輝度に対する１００時間後の輝度劣化は小さかった。 Furthermore, when a current density was maintained at 30 mA / cm 2 under a nitrogen atmosphere and a voltage was applied, the luminance degradation after 100 hours with respect to the initial luminance was small.
＜実施例３０＞
図４に示す構造の有機発光素子を以下に示す方法で作成した。
<Example 30>
An organic light emitting device having the structure shown in FIG. 4 was prepared by the following method.
基板１としてのガラス基板上に、陽極２としての酸化錫インジウム（ＩＴＯ）をスパッタ法にて１２０ｎｍの膜厚で成膜したものを透明導電性支持基板として用いた。これをアセトン、イソプロピルアルコール（ＩＰＡ）で順次超音波洗浄し、次いでＩＰＡで煮沸洗浄後乾燥した。さらに、ＵＶ／オゾン洗浄したものを透明導電性支持基板として使用した。 What formed indium tin oxide (ITO) as an anode 2 with a film thickness of 120 nm on a glass substrate as a substrate 1 by a sputtering method was used as a transparent conductive support substrate. This was ultrasonically washed successively with acetone and isopropyl alcohol (IPA), then boiled and washed with IPA and then dried. Furthermore, what was UV / ozone cleaned was used as a transparent conductive support substrate.
第１ホール輸送層５−１として例示化合物３を用いて、濃度が０．１ｗｔ％となるようにクロロホルム溶液を調整した。 Using Example Compound 3 as the first hole transport layer 5-1, a chloroform solution was prepared so that the concentration was 0.1 wt%.
この溶液を上記のＩＴＯ電極上に滴下し、最初に５００ＲＰＭの回転で１０秒、次に１０００ＲＰＭの回転で１分間スピンコートを行い膜形成した。この後１０分間、８０℃の真空オーブンで乾燥し、薄膜中の溶剤を完全に除去した。形成された第１ホール輸送層５−１の厚みは１２ｎｍであった。 This solution was dropped on the ITO electrode, and a film was formed by spin coating first at a rotation of 500 RPM for 10 seconds and then at a rotation of 1000 RPM for 1 minute. Thereafter, the film was dried in a vacuum oven at 80 ° C. for 10 minutes to completely remove the solvent in the thin film. The thickness of the formed first hole transport layer 5-1 was 12 nm.
次に、第１ホール輸送層５−１の上に例示化合物８を蒸着して２０ｎｍの第２ホール輸送層５−２を設けた。蒸着時の真空度は１．０×１０−４Ｐａ、成膜速度は０．１ｎｍ／ｓｅｃの条件で成膜した。 Next, the exemplary compound 8 was vapor-deposited on the first hole transport layer 5-1, thereby providing a 20 nm second hole transport layer 5-2. The degree of vacuum during vapor deposition was 1.0 × 10 −4 Pa, and the film formation rate was 0.1 nm / sec.
次に化合物５−２に対し化合物５−１を５ｗｔ％の割合で共蒸着して２５ｎｍの発光層４を設けた。
更に、電子輸送層及びＡｌ電極は実施例１６と同様に作成した。
Next, Compound 5-1 was co-evaporated at a ratio of 5 wt% with respect to Compound 5-2 to provide a 25 nm light-emitting layer 4.
Further, the electron transport layer and the Al electrode were prepared in the same manner as in Example 16.
この様にして得られた素子に、ＩＴＯ電極（陽極２）を正極、Ａｌ電極（陰極４）を負極にして、４．０Ｖの印加電圧で、電流密度４．３ｍＡ／ｃｍ２、発光輝度５２３ｃｄ／ｍ２の青色発光が観測された。ここで例示化合物８のバンドギャップは、化合物５−２のそれより大きい。また、イオン化ポテンシャルに関しては、例示化合物３、８、化合物５−２の序列で深い。 The device thus obtained was used with an ITO electrode (anode 2) as a positive electrode and an Al electrode (cathode 4) as a negative electrode, with an applied voltage of 4.0 V, a current density of 4.3 mA / cm 2, and an emission luminance of 523 cd / Blue emission of m 2 was observed. Here, the band gap of Exemplified Compound 8 is larger than that of Compound 5-2. Further, the ionization potential is deep in the order of exemplary compounds 3 and 8 and compound 5-2.
さらに、窒素雰囲気下で電流密度を３０ｍＡ／ｃｍ２に保ち、電圧を印加したところ、初期輝度に対する１００時間後の輝度劣化は小さかった。 Furthermore, when a current density was maintained at 30 mA / cm 2 under a nitrogen atmosphere and a voltage was applied, the luminance degradation after 100 hours with respect to the initial luminance was small.
１ 基板
２ 陽極
３ 発光層
４ 陰極
５ ホール輸送層
５−１ 第１ホール輸送層
５−２ 第２ホール輸送層
６ 電子輸送層
DESCRIPTION OF SYMBOLS 1 Substrate 2 Anode 3 Light emitting layer 4 Cathode 5 Hole transport layer 5-1 First hole transport layer 5-2 Second hole transport layer 6 Electron transport layer
Claims (7)
（式中、Ａｒ１は、２位または４位で結合する置換あるいは無置換のフルオレン基を表わす。Ａｒ２はアリール基を表わす。Ｒ１乃至Ｒ９はそれぞれ独立に水素原子、アルキル基、アリール基の中から選ばれる。
前記Ａｒ１で示される前記フルオレン基は、ハロゲン原子、メチル基、エチル基、プロピル基、ブチル基、ターシャリ―ブチル基を有してよいフェニル基、ビフェニル基、９，９−ジメチルフルオレン基、９，９−ジメチル−２，７−ジターシャリ―ブチルフルオレン基を置換基として有してよい。
前記Ａｒ２で示されるアリール基は、フェニル基、ビフェニル基、ターフェニル基、フルオレン基のいずれかである。
前記Ａｒ２で示されるフェニル基は、メチル基、ブチル基、９，９−メチルフルオレン基、メチル基またはターシャリ―ブチル基を有してよいフェニル基を置換基として有してよい。
前記Ａｒ２で示されるフルオレン基は、メチル基、エチル基、ターシャリ―ブチル基、９，９−ジメチルフルオレン基、９，９−ジメチル−２，７−ジターシャリ―ブチルフルオレン基を置換基として有してよい。
前記Ｒ１乃至前記Ｒ９で示されるアルキル基は、メチル基、ターシャリブチル基のいずれかである。
前記Ｒ１乃至前記Ｒ９で示されるアリール基は、フェニル基、ビフェニル基、ターフェニル基、フルオレン基のいずれかである。
前記アリール基は、メチル基、ターシャリブチル基、フェニル基、ビフェニル基を置換基として有してよい。） A 4-aminofluorene compound represented by the following general formula [1].
(In the formula, Ar 1 represents a substituted or unsubstituted fluorene group bonded at the 2-position or 4-position. Ar 2 represents an aryl group. R 1 to R 9 each independently represents a hydrogen atom, an alkyl group, or an aryl group. Selected from the group.
The fluorene group represented by Ar1 includes a halogen atom, a methyl group, an ethyl group, a propyl group, a butyl group, a phenyl group that may have a tertiary butyl group , a biphenyl group, a 9,9-dimethylfluorene group, a 9, It may have a 9-dimethyl-2,7-ditertiary-butylfluorene group as a substituent .
The aryl group represented by Ar2 is any one of a phenyl group, a biphenyl group, a terphenyl group, and a fluorene group.
The phenyl group represented by Ar2 may have a phenyl group which may have a methyl group, a butyl group, a 9,9-methylfluorene group, a methyl group or a tertiary butyl group as a substituent.
The fluorene group represented by Ar2 has a methyl group, ethyl group, tertiary-butyl group, 9,9-dimethylfluorene group, 9,9-dimethyl-2,7-ditertiary-butylfluorene group as a substituent. Good.
The alkyl group represented by R1 to R9 is either a methyl group or a tertiary butyl group.
The aryl group represented by R1 to R9 is any one of a phenyl group, a biphenyl group, a terphenyl group, and a fluorene group.
The aryl group may have a methyl group, a tertiary butyl group, a phenyl group, or a biphenyl group as a substituent. )
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| CN2006800481077A CN101341115B (en) | 2005-12-20 | 2006-12-15 | 4-aminofluorene compound and organic light emitting device |
| EP06835131A EP1966124B1 (en) | 2005-12-20 | 2006-12-15 | 4-aminofluorene compounds and organic light emitting devices |
| KR1020087017421A KR101049328B1 (en) | 2005-12-20 | 2006-12-15 | 4-aminofluorene compound and organic light emitting device |
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- 2006-11-22 JP JP2006315716A patent/JP5268247B2/en active Active
- 2006-12-15 US US12/158,117 patent/US8691398B2/en active Active
- 2006-12-15 EP EP06835131A patent/EP1966124B1/en active Active
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7609606B2 (en) | 2019-11-08 | 2025-01-07 | 株式会社半導体エネルギー研究所 | Light-emitting device, electronic device and lighting device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101341115A (en) | 2009-01-07 |
| WO2007072952A1 (en) | 2007-06-28 |
| US20100033081A1 (en) | 2010-02-11 |
| EP1966124B1 (en) | 2012-11-07 |
| EP1966124A4 (en) | 2009-11-11 |
| EP1966124A1 (en) | 2008-09-10 |
| KR101049328B1 (en) | 2011-07-13 |
| KR20080077288A (en) | 2008-08-21 |
| US8691398B2 (en) | 2014-04-08 |
| CN101341115B (en) | 2013-03-06 |
| JP2008019238A (en) | 2008-01-31 |
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