JP5291105B2 - Method for manufacturing field effect transistor - Google Patents

Abstract

A process for producing a field effect transistor is provided which can attain an improvement in transistor characteristics without the need of high-temperature annealing. An In-Ga-Zn-O thin film constituting an active layer is formed by sputtering at a film deposition temperature of 100°C or higher.  Thereafter, the thin film is annealed in the air at 300°C.  The annealing is conducted in order to improve the transistor characteristics of the active layer which has just been deposited.  The In-Ga-Zn-O thin film deposited by sputtering while heating the substrate is reduced in internal strain and defects as compared with an In-Ga-Zn-O thin film deposited without heating.  Consequently, the In-Ga-Zn-O thin film formed as an active layer with heating is capable of being more effectively annealed than an active layer of the same material deposited without heating.  Thus, an active layer having excellent transistor characteristics can be formed through low-temperature annealing.

Description

  The present invention relates to a method for manufacturing a field effect transistor having an active layer formed of an InGaZnO-based semiconductor oxide.

  In recent years, active matrix liquid crystal displays have been widely used. An active matrix liquid crystal display has a field effect thin film transistor (TFT) as a switching element for each pixel.

  As the thin film transistor, a polysilicon thin film transistor whose active layer is made of polysilicon and an amorphous silicon thin film transistor whose active layer is made of amorphous silicon are known.

  An amorphous silicon thin film transistor has an advantage that it can be uniformly formed on a substrate having a relatively large area because an active layer can be easily produced compared to a polysilicon thin film transistor.

On the other hand, a transparent amorphous oxide thin film is being developed as an active layer material capable of realizing higher carrier (electron, hole) mobility than amorphous silicon. For example, Patent Document 1 describes a field effect transistor using a homologous compound InMO ₃ (ZnO) _m (M = In, Fe, Ga or Al, m = 1 or more and an integer less than 50) as an active layer. . Patent Document 2 discloses the manufacture of a field effect transistor in which an In—Ga—Zn—O-based active layer is formed by sputtering a target material made of a polycrystalline sintered body having an InGaO ₃ (ZnO) ₄ composition. A method is described.

JP 2004-103957 A (paragraph [0010]) JP 2006-165527 A (paragraphs [0103] to [0119])

  An active layer having an In—Ga—Zn—O-based composition does not have practical transistor characteristics (on-current characteristics, off-current characteristics, on / off-current ratio, etc.) immediately after film formation, and thus is not formed. After the film is annealed at an appropriate temperature. The higher the annealing temperature, the better the transistor characteristics.

  However, the upper limit of the annealing temperature is limited to the heat resistant temperature of the functional film (electrode film, insulating film) other than the base material and the active layer to be used. Therefore, depending on the heat resistance of these structural layers, desired transistor characteristics may not be obtained due to insufficient annealing.

  In view of the circumstances as described above, an object of the present invention is to provide a method for manufacturing a field effect transistor capable of improving transistor characteristics without requiring high-temperature annealing.

  In the method for manufacturing a field effect transistor according to one embodiment of the present invention, a process of forming an active layer having an In—Ga—Zn—O-based composition on a base material by sputtering while heating the base material. including. The formed active layer is annealed.

It is principal part sectional drawing of each process explaining the manufacturing method of the field effect transistor which concerns on embodiment of this invention. It is principal part sectional drawing of each process explaining the manufacturing method of the field effect transistor which concerns on embodiment of this invention. It is principal part sectional drawing of each process explaining the manufacturing method of the field effect transistor which concerns on embodiment of this invention. It is principal part sectional drawing of each process explaining the manufacturing method of the field effect transistor which concerns on embodiment of this invention. It is principal part sectional drawing of each process explaining the manufacturing method of the field effect transistor which concerns on embodiment of this invention. It is one experimental result which shows the on-current characteristic and off-current characteristic of the sample for evaluation demonstrated in embodiment of this invention. It is typical sectional drawing of the sample for evaluation demonstrated in embodiment of this invention. It is one experimental result which shows the relationship between the annealing conditions of an evaluation sample, and on-off current ratio demonstrated in embodiment of this invention.

  In the method of manufacturing a field effect transistor according to one embodiment of the present invention, an active layer having an In—Ga—Zn—O-based composition is formed on a base material by sputtering while heating the base material. The process of carrying out is included. The formed active layer is annealed.

  The annealing process is performed for the purpose of improving the transistor characteristics of the active layer immediately after film formation. An In—Ga—Zn—O thin film formed by a sputtering method while heating a substrate has fewer internal strains and defects than an In—Ga—Zn—O thin film formed without heating. Therefore, by forming an In—Ga—Zn—O thin film formed by heating as an active layer, the annealing effect can be enhanced as compared with an active layer of the same material formed without heating. Thereby, an active layer having excellent transistor characteristics can be formed by low-temperature annealing.

  The substrate is typically a glass substrate. The size of the substrate is not particularly limited.

The film forming temperature of the active layer can be 100 ° C. or higher.
This makes it possible to lower the annealing temperature necessary for providing predetermined transistor characteristics as compared with an active layer formed without heating. Note that the deposition temperature is not limited to 100 ° C., and can be appropriately changed according to the deposition conditions. As a heating mechanism for heating the substrate, a sheath heater, a lamp heater, or the like can be employed.

The annealing temperature of the active layer can be 300 ° C. or higher. An annealing pressure of the active layer may be an atmospheric pressure or a reduced pressure atmosphere. The treatment atmosphere may be air or an oxygen gas atmosphere.
According to the experiments of the present inventors, the active layer formed by heating is annealed in the atmosphere at 300 ° C., so that the on / off current ratio is the same as that in the case where the active layer formed without heating is annealed at 400 ° C. in the atmosphere. (ON current / OFF current) could be obtained. From this, it can be seen that the active layer formed by heating can form an active layer having excellent transistor characteristics by annealing at a low temperature as compared with the active layer of the same material formed without heating.

The step of forming the active layer may include forming the active layer by a reactive sputtering method with an oxidizing gas (for example, O ₂ , O ₃ , H _2, etc.).
As the sputtering target for forming the In—Ga—Zn—O thin film, a single target of In—Ga—Zn—O may be used, or an In ₂ O ₃ target, a Ga ₂ O ₃ target, and a ZnO target. A plurality of targets such as may be used. In sputtering film formation in an oxygen atmosphere, the oxygen concentration in the film can be easily controlled by controlling the partial pressure (flow rate) of the introduced oxygen.

The base material may include a gate electrode, and a gate insulating film covering the gate electrode may be further formed before forming the active layer.
Thus, a bottom-gate field effect transistor can be manufactured. The gate electrode may be an electrode film formed on a base material, or the base material itself may be composed of a gate electrode.

  A protective film covering the active layer may be formed, and a source electrode and a drain electrode contacting the active layer may be formed. The protective film can be formed by a sputtering method.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  1 to 5 are cross-sectional views of a main part of each step for explaining a method of manufacturing a field effect transistor according to an embodiment of the present invention. In this embodiment mode, a method for manufacturing a field-effect transistor having a so-called bottom-gate transistor structure is described.

  First, as shown in FIG. 1A, a gate electrode film 11F is formed on one surface of a base material 10.

  The base material 10 is typically a glass substrate. The gate electrode film 11F is typically composed of a metal single layer film or a metal multilayer film such as molybdenum, chromium, or aluminum, and is formed by, for example, a sputtering method. The thickness of the gate electrode film 11F is not particularly limited and is, for example, 300 nm.

  Next, as shown in FIGS. 1B to 1D, a resist mask 12 for patterning the gate electrode film 11F into a predetermined shape is formed. This step includes a step of forming a photoresist film 12F (FIG. 1B), an exposure step (FIG. 1C), and a development step (FIG. 1D).

  The photoresist film 12F is formed by applying a liquid photosensitive material on the gate electrode film 11F and then drying it. A dry film resist may be used as the photoresist film 12F. The formed photoresist film 12F is exposed through the mask 13 and then developed. Thereby, a resist mask 12 is formed on the gate electrode film 11F.

  Subsequently, as shown in FIG. 1E, the gate electrode film 11F is etched using the resist mask 12 as a mask. Thereby, the gate electrode 11 is formed on the surface of the substrate 10.

  The etching method of the gate electrode film 11F is not particularly limited, and may be a wet etching method or a dry etching method. After the etching, the resist mask 12 is removed. The method for removing the resist mask 12 is an ashing process using oxygen gas plasma, but is not limited to this, and may be dissolved and removed using a chemical solution.

  Next, as illustrated in FIG. 2A, a gate insulating film 14 is formed on the surface of the base material 10 so as to cover the gate electrode 11.

The gate insulating film 14 is typically composed of an oxide film or a nitride film such as a silicon oxide film (SiO ₂ ) or a silicon nitride film (SiNx), and is formed by, for example, a CVD method or a sputtering method. The thickness of the gate electrode film 11F is not particularly limited, and is, for example, 200 nm to 500 nm.

  2B, on the gate insulating film 14, a thin film (hereinafter simply referred to as “IGZO film”) 15F having an In—Ga—Zn—O-based composition and a stopper layer forming film 16F are formed. Are formed in order.

  The IGZO film 15F and the stopper layer forming film 16F are formed by a sputtering method. The IGZO film 15F and the stopper layer forming film 16F can be continuously formed. In this case, the sputtering target for forming the IGZO film 15F and the sputtering target for forming the stopper layer forming film 16F may be disposed in the same sputtering chamber. By switching the target to be used, the IGZO film 15F and the stopper layer forming film 16F can be formed independently.

  The IGZO film 15F is formed in a state where the substrate 10 is heated to a predetermined temperature. The heating temperature of the base material 10 is, for example, 100 ° C. or higher. In the present embodiment, the active layer 15 (IGZO film 15F) is formed by a reactive sputtering method in which a reaction product with oxygen is deposited on the substrate 10 by sputtering a target in an oxygen gas atmosphere. The discharge type may be any of DC discharge, AC discharge, and RF discharge. Moreover, you may employ | adopt the magnetron discharge method which arrange | positions a permanent magnet in the back side of a target.

  The thickness of each of the IGZO film 15F and the stopper layer forming film 16F is not particularly limited. For example, the thickness of the IGZO film 15F is 50 nm to 200 nm, and the thickness of the stopper layer forming film 16F is 30 nm to 300 nm.

The IGZO film 15F constitutes an active layer (carrier layer) 15 of the transistor. The stopper layer forming film 16F is an etching protection that protects the channel region of the IGZO film from the etchant in the patterning process of the metal film constituting the source electrode and the drain electrode, which will be described later, and the process of etching away the unnecessary area of the IGZO film 15F. Acts as a layer. The stopper layer forming film 16F is made of, for example, SiO ₂ .

  Next, as shown in FIGS. 2C and 2D, after forming a resist mask 27 for patterning the stopper layer forming film 16F into a predetermined shape, the stopper layer forming film 16F is passed through the resist mask 27. Etch. Thereby, the stopper layer 16 facing the gate electrode 11 is formed with the gate insulating film 14 and the IGZO film 15F interposed therebetween.

  After removing the resist mask 27, a metal film 17F is formed so as to cover the IGZO film 15F and the stopper layer 16, as shown in FIG.

  The metal film 17F is typically composed of a metal single layer film or a metal multilayer film such as molybdenum, chromium, or aluminum, and is formed by, for example, a sputtering method. The thickness of the metal film 17F is not particularly limited, and is, for example, 100 nm to 500 nm.

  Subsequently, as shown in FIGS. 3A and 3B, the metal film 17F is patterned.

  The patterning process for the metal film 17F includes a process for forming the resist mask 18 (FIG. 3A) and an etching process for the metal film 17F (FIG. 3B). The resist mask 18 has a mask pattern that opens the region immediately above the stopper layer 16 and the peripheral region of each transistor. After the formation of the resist mask 18, the metal film 17F is etched by wet etching. Thereby, the metal film 17F is separated into the source electrode 17S and the drain electrode 17D. In the following description, the source electrode 17S and the drain electrode 17D are also collectively referred to as the source / drain electrode 17.

  In the step of forming the source / drain electrode 17, the stopper layer 16 functions as an etching stopper layer for the metal film 17F. The stopper layer 16 is formed so as to cover a region (hereinafter referred to as “channel region”) located between the source electrode 17S and the drain electrode 17D of the IGZO film 15F. Therefore, the channel region of the IGZO film 15F is not affected by the etching process of the metal film 17F.

  Next, as shown in FIGS. 3C and 3D, the IGZO film 15F is etched using the resist mask 18 as a mask.

  The etching method is not particularly limited, and may be a wet etching method or a dry etching method. By this etching process of the IGZO film 15F, the IGZO film 15F is isolated in element units and an active layer 15 made of the IGZO film 15F is formed.

  At this time, the stopper layer 16 functions as an etching protective film for the IGZO film 15F located in the channel region. Thereby, the channel region of the active layer 15 is not affected by the etching process of the IGZO film 15F.

  After patterning the IGZO film 15F, the resist mask 18 is removed from the source / drain electrode 17 by ashing or the like (FIG. 3D).

  Next, as shown in FIG. 4A, a protective film 19 is formed on the surface of the base material 10 so as to cover the source / drain electrodes 17, the stopper layer 16, the active layer 15, and the gate insulating film 14. .

The protective film 19 is for securing predetermined electrical and material characteristics by blocking the transistor element including the active layer 15 from the outside air. The protective film 19 is typically composed of an oxide film or nitride film such as a silicon oxide film (SiO ₂ ) or a silicon nitride film (SiNx), and is formed by, for example, a CVD method or a sputtering method. The thickness of the protective film 19 is not specifically limited, For example, it is 200 nm-500 nm.

  Subsequently, as shown in FIGS. 4B to 4D, contact holes 19 a communicating with the source / drain electrodes 17 are formed in the protective film 19. This step includes a step of forming a resist mask 20 on the protective film 19 (FIG. 4B) and a step of etching the protective film 19 exposed from the opening 20a of the resist mask 20 (FIG. 4C). And a step of removing the resist mask 20 (FIG. 4D).

  The contact hole 19a is formed by a dry etching method, but may be a wet etching method. Although not shown, a contact hole that communicates with the source electrode 17S is also formed at an arbitrary position.

  Next, as shown in FIGS. 5A to 5D, a transparent conductive film 21 is formed in contact with the source / drain electrode 17 via the contact hole 19a. This step is covered with the step of forming the transparent conductive film 21F (FIG. 5A), the step of forming the resist mask 22 on the transparent conductive film 21F (FIG. 5B), and the resist mask 22. A step of etching the transparent conductive film 21F not yet formed (FIG. 5C) and a step of removing the resist mask 20 (FIG. 5D).

  The transparent conductive film 21F is typically composed of an ITO film or an IZO film, and is formed by, for example, a sputtering method or a CVD method. The etching of the transparent conductive film 21F employs a wet etching method, but is not limited thereto, and a dry etching method may be employed.

  The transistor element 100 with the transparent conductive film 21 shown in FIG. 5D is then subjected to an annealing process for the purpose of relaxing the structure of the active layer 15. As a result, desired transistor characteristics are imparted to the active layer 15.

  As described above, a field effect transistor is manufactured.

  In the present embodiment, the IGZO film 15F constituting the active layer 15 is formed in a state where the substrate 10 is heated to a predetermined temperature. The IGZO film 15F formed by heating in this way has fewer internal strains and defects in the film than the IGZO film formed without heating. By configuring the heated IGZO film 15F as the active layer 15, excellent transistor characteristics (on-current characteristics, off-current characteristics, on-off current ratio, etc.) are obtained as compared with the active layer formed without heating. be able to.

  The inventors of the present invention have prepared an active layer (sample 1) formed by sputtering at a heating temperature of 100 ° C., an active layer (sample 2) formed by sputtering at a heating temperature of 200 ° C., and an active layer formed by sputtering without heating (sample 2). The current characteristics (on current value, off current value) of sample 3) were measured. FIG. 6 shows the experimental results. In the figure, the horizontal axis represents the oxygen partial pressure during film formation, and the vertical axis represents the current value. In the figure, “●” indicates the on-current value of sample 1, “◯” indicates the off-current value of sample 1, “♦” indicates the on-current value of sample 2, “◇” indicates the off-current value of sample 2, and “▲” "Is the on-current value of sample 3, and" [Delta] "is the off-current value of sample 3.

  The film formation conditions of Sample 1, Sample 2 and Sample 3 differed only in the substrate temperature at the time of film formation of the active layer. Sample 1 was 100 ° C., Sample 2 was 200 ° C., and Sample 3 was room temperature. The power of the sputtering cathode was 0.6 kW (DC), the atmosphere for forming the active layer was a mixed gas of Ar and oxygen, and the argon partial pressure was constant and 0.74 Pa (flow rate: 230 sccm). The substrate temperature was measured based on the output of a thermocouple attached to the substrate.

  FIG. 7 is a cross-sectional view schematically showing the configuration of Samples 1 to 3. The transistor elements according to Samples 1 to 3 include a p-type silicon substrate as a gate electrode 31, a silicon nitride film as a gate insulating film 32, an IGZO film as an active layer 33, and source / drain electrodes 34S and 34D. It consists of a laminated structure of aluminum films. The gate insulating film 32 was formed by a CVD method, and the film thickness was 350 nm. The active layer 33 was formed by a sputtering method, and the film thickness was 50 nm.

  This type of transistor element functions as a switching element that controls the magnitude of the current (source-drain current Ids) flowing between the source electrode 34S and the drain electrode 34D by controlling the voltage applied to the gate electrode 31. . In particular, this type of transistor element is called a field effect transistor because of the principle of controlling the current between the source and the drain by changing the carrier distribution in the active layer according to the magnitude of the electric field acting between the gate and the source. being called.

  The experimental results shown in FIG. 6 are current characteristics immediately after the formation of the active layer 33, and no annealing treatment is performed. In addition, the element dimensions of Sample 1, Sample 2, and Sample 3 and the configuration of the circuit for evaluating electrical characteristics were all the same. The on-current value means the magnitude of the source-drain current (Ids) when the gate voltage (Vgs) is equal to or higher than the threshold voltage (Vth). The off-current value means the magnitude of the source-drain current (Ids) when the gate voltage (Vgs) is equal to or lower than the threshold voltage. In general, transistor characteristics are required to have a high on-current value and a low off-current value, or a high on-current value / off-current value.

  As shown in the results of FIG. 6, it was confirmed that the on-current value and the off-current value depend on the oxygen partial pressure in the film formation atmosphere for Sample 1, Sample 2, and Sample 3. In particular, for any of Samples 1 to 3, it was confirmed that the lower the oxygen partial pressure, the higher the on-current value and the off-current value.

  Comparing sample 1 and sample 2 with sample 3, sample 1 and sample 2 having an active layer formed by heating have a higher on-current value than sample 3 having an active layer formed without heating. It has improved. This is considered to be because the active layer was heated to reduce strain and defects in the active layer, and as a result, the mobility of carriers (electrons and holes) could be improved. It is done.

In Sample 1, the off-current value tends to decrease as the oxygen partial pressure increases. In particular, the off-current value is 1.0 × 10 ⁻¹⁴ (A) when the oxygen partial pressure is 0.28 Pa. It was confirmed that it dropped to. This is presumably because, as the oxygen partial pressure increases, the insulation of the active layer increases, resulting in a decrease in the off-current value.

  Further, when comparing sample 1 and sample 2, when the oxygen partial pressure is 0.02 Pa, sample 1 is higher than sample 2 when the oxygen partial pressure is 0.02 Pa, but the oxygen partial pressure is 0.03 Pa. It was confirmed that Sample 2 was higher than Sample 1 at ˜0.28 Pa. The difference in the magnitude of the on / off current between sample 1 and sample 2 is due to the difference in heating temperature during film formation. At least under the oxygen partial pressure conditions (0.02 Pa or more and 0.28 Pa or less) that were tested, Sample 1 and Sample 2 have current characteristics and on / off current compared to Sample 3 in which the active layer was formed without heating. It was confirmed that the ratio could be improved.

  As described above, when an active layer having an In—Ga—Zn—O composition is formed by heating, the on-state current value can be improved as compared with the case where the film is formed without heating. Here, the case where the film formation temperature during sputtering is 100 ° C. and 200 ° C. has been described as an example. However, the heating temperature is not limited to the above example, and may be, for example, less than 100 degrees, or more than 100 ° C to less than 200 ° C, or more than 200 ° C. That is, the heating temperature can be appropriately set according to the required transistor characteristics.

  On the other hand, by forming the active layer 15 by sputtering in a heated atmosphere, a high annealing effect can be obtained in the subsequent annealing step. The annealing process is performed for the purpose of improving the transistor characteristics of the active layer immediately after film formation. The heated active layer 15 is less sensitive to external heat application because it has less internal strain and defects than the active layer formed without heating, which lowers the annealing temperature. Promote.

  FIG. 8 shows the experimental results obtained by measuring the on / off current ratio before and after each annealing process for Sample 1, Sample 2 and Sample 3 described with reference to FIGS. The sample used for the evaluation was a sample in which the active layer was formed by sputtering at an oxygen partial pressure of 0.28 Pa. The annealing temperatures were 200 ° C., 300 ° C., and 400 ° C., and the atmosphere for the annealing treatment was 15 minutes in the air. In the figure, “●” represents the on / off current ratio of sample 1, “♦” represents the on / off current ratio of sample 2, and “▲” represents the on / off current ratio of sample 3.

  For sample 3 in which the active layer was sputtered without heating, an on / off current ratio exceeding 7 digits was obtained under the annealing condition of 400 ° C. On the other hand, for sample 1 and sample 2 in which the active layer was formed by sputtering at 100 ° C. and 200 ° C., an on / off current ratio reaching 8 digits was obtained under the annealing condition of 300 ° C.

  From the experimental results of FIG. 8, in the case of Sample 1 and Sample 2, the annealing temperature required to obtain an on / off current ratio equal to or higher than that of Sample 3 can be lowered to 100 ° C. or lower than that of Sample 3. . Therefore, in the active layer formed by heating, atoms are diffused with high followability to an external heat load because there are few distortions and defects in the film immediately after the film formation. Therefore, good transistor characteristics can be obtained even with a relatively low temperature heat load.

  In particular, according to sample 1 and sample 2, good transistor characteristics can be obtained under conditions lower than that of sample 3, so that the heat resistance of other functional films (electrode film, insulating film) other than the base material and the active layer. Even if the annealing temperature is limited by this, there is an advantage that the desired transistor characteristics can be easily obtained.

  In Sample 1 and Sample 2, it is possible to further improve the on / off current ratio by annealing at a high temperature exceeding 300 ° C. Therefore, in view of the heat resistance of the element and the like, the characteristics can be further improved by performing the annealing process under the same conditions as those for the non-heated film formation. For example, the annealing temperature can be 300 ° C. or higher and lower than 400 ° C. In addition, by setting the upper limit of the annealing temperature to 350 ° C., the occurrence of defects such as hillocks (fine projections formed on the surface) that are problematic when the gate electrode is formed of aluminum is effectively suppressed. be able to.

  The embodiment of the present invention has been described above. Of course, the present invention is not limited to this, and various modifications can be made based on the technical idea of the present invention.

  For example, in the above embodiment, the method for manufacturing the bottom gate type field effect transistor in which the gate electrode is formed on the lower layer side of the active layer has been described as an example. The present invention can also be applied to a method of manufacturing a top gate type field effect transistor formed on the upper layer side.

  In the above embodiment, the film formation temperature of the active layer 15 (IGZO film 15F) is set to 100 ° C. or higher and the annealing temperature after film formation is set to 300 ° C. The film formation temperature and the annealing temperature can be appropriately changed according to the transistor characteristics.

DESCRIPTION OF SYMBOLS 10 ... Base material 11 ... Gate electrode 14 ... Gate insulating film 15 ... Active layer 16 ... Stopper layer 17 (17S, 17D) ... Source / drain electrode 19 ... Protective film

Claims (4)

A reactive sputtering method in which an active layer having an In—Ga—Zn—O-based composition is heated to a temperature of 100 ° C. or more and less than 200 ° C., and an oxygen partial pressure is set to 0.02 Pa or more and 0.28 Pa or less. Formed on the substrate by
A method for manufacturing a field-effect transistor, wherein the formed active layer is annealed by heating the substrate to a temperature of 300 ° C. or higher and lower than 400 ° C. It is a manufacturing method of the field effect type transistor according to claim 1,
The substrate includes a gate electrode;
A method of manufacturing a field effect transistor, further comprising forming a gate insulating film covering the gate electrode before forming the active layer. A method of manufacturing a field effect transistor according to claim 1 or 2, further comprising:
Forming a protective film covering the active layer;
Forming a source electrode and a drain electrode in contact with the active layer;
A method for manufacturing a field effect transistor, comprising: annealing the active layer after forming the protective film, the source electrode, and the drain electrode. It is a manufacturing method of the field effect type transistor according to claim 3,
The step of forming the source electrode and the drain electrode includes a step of patterning a metal film by etching,
The method of manufacturing the field effect transistor further includes an etchant for etching the metal film after the step of forming the active layer and before the step of forming the source electrode and the drain electrode. A method for producing a field-effect transistor, comprising forming a stopper layer for protecting from a field effect.