JPH0544026B2 - - Google Patents
Info
- Publication number
- JPH0544026B2 JPH0544026B2 JP61110618A JP11061886A JPH0544026B2 JP H0544026 B2 JPH0544026 B2 JP H0544026B2 JP 61110618 A JP61110618 A JP 61110618A JP 11061886 A JP11061886 A JP 11061886A JP H0544026 B2 JPH0544026 B2 JP H0544026B2
- Authority
- JP
- Japan
- Prior art keywords
- formula
- group
- compound
- general formula
- represented
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 150000001875 compounds Chemical class 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 16
- 108091008695 photoreceptors Proteins 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 5
- 125000005843 halogen group Chemical group 0.000 claims description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 5
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims 2
- 125000002490 anilino group Chemical class [H]N(*)C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 claims 2
- 125000004429 atom Chemical group 0.000 claims 2
- 125000004432 carbon atom Chemical group C* 0.000 claims 2
- SXOQOOQUBDERIZ-UHFFFAOYSA-N 3,4-dichlorocyclobut-3-ene-1,2-dione Chemical compound ClC1=C(Cl)C(=O)C1=O SXOQOOQUBDERIZ-UHFFFAOYSA-N 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 5
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- JLTDJTHDQAWBAV-UHFFFAOYSA-N N,N-dimethylaniline Chemical compound CN(C)C1=CC=CC=C1 JLTDJTHDQAWBAV-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000049 pigment Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 229910001370 Se alloy Inorganic materials 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- 239000004419 Panlite Substances 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 229960000583 acetic acid Drugs 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 150000001716 carbazoles Chemical class 0.000 description 1
- 238000004440 column chromatography Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 125000000664 diazo group Chemical group [N-]=[N+]=[*] 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000012362 glacial acetic acid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012456 homogeneous solution Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/06—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being organic
- G03G5/0601—Acyclic or carbocyclic compounds
- G03G5/0609—Acyclic or carbocyclic compounds containing oxygen
- G03G5/0611—Squaric acid
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/06—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being organic
- G03G5/0601—Acyclic or carbocyclic compounds
- G03G5/0618—Acyclic or carbocyclic compounds containing oxygen and nitrogen
Landscapes
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Description
〔産業上の利用分野〕
本発明は電子写真プロセスにおいて使用される
電子写真用感光材料の製造方法に関する。更に詳
しくいえば、本発明は光導電材料として用いられ
るスクエアリリウム化合物の製造方法に関する。
〔従来の技術〕
従来、電子写真用感光材料として、無定形セレ
ン、セレン合金、硫化カドミウム、酸化亜鉛等の
無機系感光材料やポリビニルカルバゾール及びポ
リビニルカルバゾール誘導体に代表される有機系
感光材料が広く知られている。
無定形セレン或いはセレン合金は電子写真用感
光材料として極めて優れた特性を有し、実用に供
されていることは周知の通りである。しかし、そ
の製造においては蒸着という煩雑な工程を経ねば
ならず、又製造された蒸着膜は可撓性がないとい
う欠点がある。酸化亜鉛を用いる場合には、酸化
亜鉛を樹脂中に分散させた分散系感光材料として
用いるが、このような感光材料は機械的強度に難
点があり、そのままでは反復使用に耐え得ない。
有機光導電材料として広く知られているポリビ
ニルカルバゾールは透明性、皮膜形成性、可撓性
などの点で優れている利点があるものの、ポリビ
ニルカルバゾール自身は可視光域に感度を持たな
いためにそのままでは実用に供することができ
ず、従つて種々の増感方法が考案されてはいる。
ところが色素増感剤を用いてポリビニルカルバゾ
ールを分光増感した場合には分光感度域は可視光
域にまで拡張されるものの、なお電子写真用感光
体として十分な感度は得られず光疲労が甚しいと
いう欠点を持つ。又、電子受容性化合物を用いて
化学増感した場合には電子写真用感光体として感
度的には十分な感光体が得られ、一部のものは実
用化されているが、なお機械的強度、寿命等に問
題点を残している。
近年、多種類の有機系の感光体が研究され、特
に電荷発生層と電荷輸送層を有する積層型の感光
体が従来のものに比べ優れた電気特性を有するこ
とが報告されている。これらの感光体に用いられ
る電荷発生材料としてはビスアゾ類、トリスアゾ
類、フタロシアニン類、ピリリウム類、スクエア
リリウム類などが知られており、可視領域から近
赤外領域までに感度を有するものとしてはフタロ
シアニン類、トリスアゾ類、スクエアリリウム類
が報告されている。
しかしながらフタロシアニン類は分光感度が長
波長に片寄り赤色再現性に劣るという欠点を有
し、トリスアゾ類は優れた電気特性と充分な感度
を有するにいたつていない。
また特開昭49−105536号等に示されるスクエア
リリウム化合物は比較的高い感度を有するものの
帯電性、暗減衰等の欠点を有し高い感度と低い暗
減衰を両立するに至つていない。
〔発明が解決しようとする問題点〕
本発明の目的は前述の欠点を解消し、可視域か
ら近赤外領域にわたつて分光感度を有し、高感度
で優れた電気特性を有する電子写真用感光材料の
製造方法を提供することにある。
〔問題点を解決するための手段及び作用〕
本発明の目的は下記一般式()で示される非
対称スクエアリリウム化合物からなる電子写真用
感光材料の製造方法により達成することができ
る。
一般式()中、R1及びR2は互に独立したも
のであつて、水素原子、水酸基、メチル基、ハロ
ゲン原子、トリフルオロメチル基またはカルボキ
シル基を表わし、
Xは式
[Industrial Field of Application] The present invention relates to a method for producing an electrophotographic light-sensitive material used in an electrophotographic process. More specifically, the present invention relates to a method for producing a squareryllium compound used as a photoconductive material. [Prior Art] Conventionally, inorganic photosensitive materials such as amorphous selenium, selenium alloys, cadmium sulfide, and zinc oxide, and organic photosensitive materials such as polyvinyl carbazole and polyvinyl carbazole derivatives have been widely known as photosensitive materials for electrophotography. It is being It is well known that amorphous selenium or selenium alloys have extremely excellent properties as electrophotographic light-sensitive materials and are used in practical applications. However, its production requires a complicated step of vapor deposition, and the produced vapor-deposited film has the drawback of not being flexible. When zinc oxide is used, it is used as a dispersed photosensitive material in which zinc oxide is dispersed in a resin, but such a photosensitive material has a drawback in mechanical strength and cannot withstand repeated use as it is. Polyvinylcarbazole, which is widely known as an organic photoconductive material, has excellent advantages in terms of transparency, film-forming properties, and flexibility, but polyvinylcarbazole itself has no sensitivity in the visible light range, so it cannot be used as is. Therefore, various sensitization methods have been devised.
However, when polyvinylcarbazole is spectrally sensitized using a dye sensitizer, the spectral sensitivity range is extended to the visible light range, but it still cannot achieve sufficient sensitivity as a photoreceptor for electrophotography and suffers from severe photofatigue. It has the disadvantage of being In addition, when chemically sensitized using an electron-accepting compound, a photoreceptor with sufficient sensitivity as an electrophotographic photoreceptor can be obtained, and some of them have been put into practical use, but mechanical strength still remains. However, there are still problems in terms of lifespan, etc. In recent years, many types of organic photoreceptors have been studied, and in particular, it has been reported that a laminated type photoreceptor having a charge generation layer and a charge transport layer has superior electrical properties compared to conventional photoreceptors. Known charge-generating materials used in these photoreceptors include bisazos, trisazos, phthalocyanines, pyryliums, and squareryliums, and phthalocyanines are sensitive from the visible region to the near-infrared region. Tris-azo-classes, trisazo-classes, and squarerillium-classes have been reported. However, phthalocyanines have the disadvantage that their spectral sensitivity is biased toward long wavelengths and red color reproducibility is poor, and trisazo compounds have not yet achieved excellent electrical properties and sufficient sensitivity. Furthermore, although the squarylium compounds disclosed in JP-A-49-105536 and the like have relatively high sensitivity, they have drawbacks such as chargeability and dark decay, and have not been able to achieve both high sensitivity and low dark decay. [Problems to be Solved by the Invention] The purpose of the present invention is to solve the above-mentioned drawbacks, and to provide an electrophotographic device that has spectral sensitivity from the visible region to the near-infrared region, and has high sensitivity and excellent electrical properties. An object of the present invention is to provide a method for producing a photosensitive material. [Means and effects for solving the problems] The objects of the present invention can be achieved by a method for producing an electrophotographic light-sensitive material comprising an asymmetric squarerylium compound represented by the following general formula (). In the general formula (), R 1 and R 2 are independent of each other and represent a hydrogen atom, a hydroxyl group, a methyl group, a halogen atom, a trifluoromethyl group, or a carboxyl group, and X is a formula
【式】または[expression] or
合成例
3,4−ジクロロ−3−シクロブテン−1,2
−ジオン3.00gと塩化アルミニウム2.65gとを塩
化メチレン30ml中で5℃以下に保ち、塩化アルミ
ニウムが溶解するまで攪拌した。
これに、N,N−ジメチルアニリン2.43gを30
分間で滴下し、その後2.5時間液温を5℃以下に
保つたまま反応させた。反応終了後IM−HCl、
水で洗浄し、次にカラムクロマトグラフイで分離
し、下記式()で示される生成物1.64g(収率
35%)を得た。
次に()の化合物1.56gを氷酢酸30mlと水6
mlの混合溶媒に溶かし2時間加熱還流し、室温ま
で冷却した後析出した結晶を別し、生成物
()1.376g(収率95.7%)を得た。
次に生成物(X)1.00gと3−フルオロ−N,
N−ジメチルアニリン1.92gをブタノール90ml中
で20時間加熱還流した後、反応溶液を室温まで冷
却し析出した結晶を別し、メタノール、エーテ
ルで洗浄した後乾燥して生成物(;具体例No.
1)1.01g(収率64.8%)を得た。
分解点:276℃
元素分析:
計算値 C70.99%、H5.66%、N8.28%
実測値 C71.05%、H5.74%、N8.29%。
実施例 1
前記具体例No.1の構造式で示される化合物1重
量部にポリエステル樹脂(デユポン製、アドヘツ
シブ49000)1重量部、テトラヒドロフラン10重
量部を加え、ボールミルで4時間粉砕、混合した
分散液をバーコーダーを用いてアルミニウムを蒸
着したポリエステルフイルム〔東レ製、メタルミ
ー(登録商標)〕上に塗布し、70℃で5時間乾燥
させ、膜厚1μの電荷発生層を作成した。
この電荷発生層上に、N,N′−ジフエニル−
N,N′−ビス−(3−メチルフエニル)−(1,
1′−ビフエニル)−4,4′−ジアミン1重量部、
ポリカーボネート樹脂(帝人製、パンライト(登
録商標)〕1重量部、テトラヒドロフラン10重量
部からなる均一溶液をアプリケーターを用いて塗
布し、70℃で16時間乾燥させて厚さ22μの電荷輸
送層を形成し、感光体を作成した。
次に静電複写紙試験装置(川口電機製、エレク
トロスタテイツク・ペーパー・アナライザーSP
−428)を用いて、−6KVのコロナ放電を施して
負帯電させた後、2秒間暗所放置し、続いてタン
グステンランプを用い、表面の照度が10ルツクス
になるように感光層に光照射を施し、その表面電
位が暗所放置後の表面電位VDの1/2になる露光量
E1/2を求めた。その結果は、初期帯電電位V0=
−870V、2秒間暗所放置後の電位VDDP=−
750V、E1/2=2.0ルツクス・秒、残留電位Rp=
−5Vであつた。
また、長波長の光に対して極めてすぐれた感度
を有することを明らかにするため以下の測定を行
なつた。上記の感光体を暗所でコロナ放電を行い
帯電させた後、モノクロメーターを用いて800nm
に分光した1μW/cm2の単色光を感光体に照射し
た。そしてその表面電位が1/2になるまで時間を
測り、露光量を求めた。その結果10.9ergcm-2で
あつた。
実施例 2〜10
実施例1において具体例No.1のスクエアリリウ
ム顔料のかわりに表1のNo.4,5,6,10,12,
13,15,23,27〔それぞれ実施例2〜10〕のスク
エアリリウム顔料を用いたこと以外は実施例1と
同様にして感光体を作成し評価した結果を表1に
示す。
Synthesis example 3,4-dichloro-3-cyclobutene-1,2
- 3.00 g of dione and 2.65 g of aluminum chloride were stirred in 30 ml of methylene chloride while keeping the temperature below 5°C until the aluminum chloride was dissolved. To this, add 2.43 g of N,N-dimethylaniline to 30
The solution was added dropwise for 2.5 hours, and the reaction was continued for 2.5 hours while maintaining the solution temperature at 5° C. or lower. After the reaction, IM-HCl,
Washed with water and then separated by column chromatography to produce 1.64 g of product (yield:
35%). Next, add 1.56 g of the compound () to 30 ml of glacial acetic acid and 6 ml of water.
ml of mixed solvent, heated under reflux for 2 hours, cooled to room temperature, and separated the precipitated crystals to obtain 1.376 g (yield: 95.7%) of product (2). Next, 1.00 g of product (X) and 3-fluoro-N,
After heating and refluxing 1.92 g of N-dimethylaniline in 90 ml of butanol for 20 hours, the reaction solution was cooled to room temperature, the precipitated crystals were separated, washed with methanol and ether, and dried to obtain the product (Example No.
1) 1.01g (yield 64.8%) was obtained. Decomposition point: 276℃ Elemental analysis: Calculated values C70.99%, H5.66%, N8.28% Actual values C71.05%, H5.74%, N8.29%. Example 1 To 1 part by weight of the compound represented by the structural formula of Specific Example No. 1, 1 part by weight of polyester resin (manufactured by Dupont, Adhesive 49000) and 10 parts by weight of tetrahydrofuran were added, and the mixture was ground and mixed in a ball mill for 4 hours to obtain a dispersion. was applied onto a polyester film (Metal Me (registered trademark) manufactured by Toray Industries, Ltd.) on which aluminum had been vapor-deposited using a barcoder, and dried at 70° C. for 5 hours to form a charge generation layer with a thickness of 1 μm. On this charge generation layer, N,N'-diphenyl-
N,N'-bis-(3-methylphenyl)-(1,
1 part by weight of 1'-biphenyl)-4,4'-diamine,
A homogeneous solution consisting of 1 part by weight of polycarbonate resin (manufactured by Teijin, Panlite (registered trademark)) and 10 parts by weight of tetrahydrofuran was applied using an applicator and dried at 70°C for 16 hours to form a charge transport layer with a thickness of 22μ. Next, an electrostatic copying paper testing device (manufactured by Kawaguchi Electric, Electrostatic Paper Analyzer SP) was used.
-428) to negatively charge the photosensitive layer with -6KV corona discharge, leave it in the dark for 2 seconds, and then use a tungsten lamp to irradiate the photosensitive layer with light so that the surface illuminance is 10 lux. The exposure amount E1/2 was determined so that the surface potential was 1/2 of the surface potential V D after being left in the dark. The result is that the initial charging potential V 0 =
-870V, potential after being left in the dark for 2 seconds V DDP = -
750V, E1/2 = 2.0 Lux・sec, residual potential R p =
It was -5V. In addition, the following measurements were performed to demonstrate that the material has extremely high sensitivity to long wavelength light. After charging the above photoreceptor by corona discharge in a dark place, use a monochromator to charge it at 800nm.
The photoreceptor was irradiated with monochromatic light of 1 μW/cm 2 which was divided into 1 μW/cm 2 . The amount of exposure was determined by measuring the time until the surface potential decreased to 1/2. The result was 10.9ergcm -2 . Examples 2 to 10 In Example 1, instead of the squarerium pigment of Specific Example No. 1, No. 4, 5, 6, 10, 12, and
Photoreceptors were prepared and evaluated in the same manner as in Example 1, except that the squarerium pigments Nos. 13, 15, 23, and 27 (Examples 2 to 10, respectively) were used. Table 1 shows the results of evaluation.
本発明は可視域から近赤外領域にわたつて分光
感度を有し、高感度で優れた電気特性を有する非
対称スクエアリリウム化合物からなる電子写真用
感光材料の製造方法を提供したものであり、電荷
発生層2及び電荷輸送層3から成る二層構造の感
光層を含む電子写真用感光体において、本発明に
よるスクエアリリウム化合物を含有した電荷発生
層ならびに公知の電荷輸送層3をもうけることに
よつて、高感度でしかも帯電性、暗減衰等の電気
特性の改善された感光体を製作することができ
る。
これらの非対称スクエアリリウム顔料を利用し
た電子写真感光体は複写機のみならず半導体レー
ザープリンターなどに広く用いることができる。
The present invention provides a method for producing an electrophotographic photosensitive material made of an asymmetric squareryllium compound that has spectral sensitivity from the visible region to the near-infrared region, and has high sensitivity and excellent electrical properties. In an electrophotographic photoreceptor including a photosensitive layer with a two-layer structure consisting of a generation layer 2 and a charge transport layer 3, by providing a charge generation layer containing the squareylium compound according to the present invention and a known charge transport layer 3. , it is possible to produce a photoreceptor with high sensitivity and improved electrical properties such as chargeability and dark decay. Electrophotographic photoreceptors using these asymmetric squarerium pigments can be widely used not only in copying machines but also in semiconductor laser printers and the like.
第1図及び第2図は、本発明の電子写真感光体
例の断面図である。
図中符号:1……導電性支持体、2……電荷発
生層、3……電荷輸送層、4……感光層。
1 and 2 are cross-sectional views of examples of the electrophotographic photoreceptor of the present invention. Symbols in the figure: 1... conductive support, 2... charge generation layer, 3... charge transport layer, 4... photosensitive layer.
Claims (1)
−1,2−ジオンと一般式() (式中、R1は水素原子、水酸基、メチル基、
ハロゲン原子、トリフルオロメチル基またはカル
ボキシル基を表わす。) で示されるアニリン誘導体とを反応させて一般式
() (式中、R1は前記と同じ意味を表わす。) で示される化合物を得、ついで式()の化合物
を加水分解して一般式() (式中、R1は前記と同じ意味を表わす。) で示される化合物を得、この一般式()の化合
物を一般式() [式中、R2は水素原子、水酸基、メチル基、
ハロゲン原子、トリフルオロメチル基またはカル
ボキシル基を表わし、Xは式 【式】または【式】 (式中、R3及びR4は互に独立したものであつ
て、炭素数1〜20のアルキル基を表わし、Zは環
を形成するのに必要な原子群を表わす。)で示さ
れる基を表わす。] で示される化合物と反応させることを特徴とする
一般式() (式中、R1,R2及びXは前記と同じ意味を表
わす。) で示される化合物とすることを特徴とする非対称
スクエアリリウム化合物からなる電子写真用感光
材料の製造方法。 2 式() で示される3,4,−ジクロロ−3−シクロブテ
ン−1,2−ジオンと一般式() [式中、R2は水素原子、水酸基、メチル基、
ハロゲン原子、トリフルオロメチル基またはカル
ボキシル基を表わし、Xは式 【式】または【式】 (式中、R3及びR4は互いに独立したものであ
つて、炭素数1〜20のアルキル基を表わし、Zは
環を形成するのに必要な原子群を表わす。)で示
される基を表わす。] で示される化合物と反応させ、一般式() (式中、R2及びXは前記と同じ意味を表わ
す。) で示される化合物を得、ついで式()の化合物
を加水分解して一般式() (式中、R2及びXは前記と同じ意味を表わ
す。) で示される化合物を得、この一般式()の化合
物を一般式() (式中、R1は水素原子、水酸基、メチル基、
ハロゲン原子、トリフルオロメチル基またはカル
ボキシル基を表わす。) で示されるアニリン誘導体と反応させることを特
徴とする一般式() (式中、R1,R2及びXは前記と同じ意味を表
わす。) で示される化合物とすることを特徴とする非対称
スクエアリリウム化合物からなる電子写真用感光
体材料の製造方法。[Claims] 1 Formula () 3,4-dichloro-3-cyclobutene-1,2-dione represented by the general formula () (In the formula, R 1 is a hydrogen atom, a hydroxyl group, a methyl group,
Represents a halogen atom, trifluoromethyl group or carboxyl group. ) is reacted with the aniline derivative represented by the general formula (). (In the formula, R 1 represents the same meaning as above.) A compound represented by the formula () is obtained, and then the compound of the formula () is hydrolyzed to obtain the compound of the general formula () (In the formula, R 1 represents the same meaning as above.) A compound represented by the general formula () is obtained, and a compound of the general formula () is [In the formula, R 2 is a hydrogen atom, a hydroxyl group, a methyl group,
Represents a halogen atom, trifluoromethyl group, or carboxyl group, and X represents the formula [Formula] or [Formula] (wherein R 3 and R 4 are mutually independent, and are an alkyl group having 1 to 20 carbon atoms. and Z represents a group of atoms necessary to form a ring. ] General formula () characterized by reacting with a compound represented by (In the formula, R 1 , R 2 and X have the same meanings as above.) A method for producing an electrophotographic light-sensitive material comprising an asymmetric squarerylium compound. 2 formula () 3,4,-dichloro-3-cyclobutene-1,2-dione represented by the general formula () [In the formula, R 2 is a hydrogen atom, a hydroxyl group, a methyl group,
Represents a halogen atom, trifluoromethyl group, or carboxyl group, and X represents the formula [Formula] or [Formula] (wherein R 3 and R 4 are mutually independent, and represent an alkyl group having 1 to 20 carbon atoms. and Z represents a group of atoms necessary to form a ring. ] By reacting with a compound represented by the general formula () (In the formula, R 2 and (In the formula, R 2 and X have the same meanings as above.) (In the formula, R 1 is a hydrogen atom, a hydroxyl group, a methyl group,
Represents a halogen atom, trifluoromethyl group or carboxyl group. ) General formula () characterized by reacting with an aniline derivative represented by (In the formula, R 1 , R 2 and X have the same meanings as above.) A method for producing an electrophotographic photoreceptor material comprising an asymmetric squarerylium compound.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11061886A JPS62267754A (en) | 1986-05-16 | 1986-05-16 | Electrophotographic sensitive material and its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11061886A JPS62267754A (en) | 1986-05-16 | 1986-05-16 | Electrophotographic sensitive material and its production |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62267754A JPS62267754A (en) | 1987-11-20 |
JPH0544026B2 true JPH0544026B2 (en) | 1993-07-05 |
Family
ID=14540371
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11061886A Granted JPS62267754A (en) | 1986-05-16 | 1986-05-16 | Electrophotographic sensitive material and its production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62267754A (en) |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5992768A (en) * | 1982-11-18 | 1984-05-29 | Nippon Telegr & Teleph Corp <Ntt> | Drive circuit for switching power source |
JPS59225571A (en) * | 1983-06-03 | 1984-12-18 | Sumitomo Electric Ind Ltd | field effect transistor |
JPS59225577A (en) * | 1983-06-06 | 1984-12-18 | Semiconductor Energy Lab Co Ltd | Semiconductor device manufacturing method |
JPS59225579A (en) * | 1983-06-06 | 1984-12-18 | Sharp Corp | Photoelectric channel switch |
JPS60130557A (en) * | 1983-12-16 | 1985-07-12 | Fuji Xerox Co Ltd | Novel squarium compound and its preparation |
JPS60142946A (en) * | 1983-12-05 | 1985-07-29 | ゼロツクス コーポレーシヨン | Asymmetric squaline compound |
JPS60174750A (en) * | 1984-01-11 | 1985-09-09 | ゼロツクス コ−ポレ−シヨン | Manufacture of squaline compound |
JPS6110540A (en) * | 1983-12-05 | 1986-01-18 | ゼロツクス コ−ポレ−シヨン | Light responsive device containing novel squaline compound |
JPS6187647A (en) * | 1984-09-13 | 1986-05-06 | ゼロツクス コ−ポレ−シヨン | Preparation of mixed squaline compound |
-
1986
- 1986-05-16 JP JP11061886A patent/JPS62267754A/en active Granted
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5992768A (en) * | 1982-11-18 | 1984-05-29 | Nippon Telegr & Teleph Corp <Ntt> | Drive circuit for switching power source |
JPS59225571A (en) * | 1983-06-03 | 1984-12-18 | Sumitomo Electric Ind Ltd | field effect transistor |
JPS59225577A (en) * | 1983-06-06 | 1984-12-18 | Semiconductor Energy Lab Co Ltd | Semiconductor device manufacturing method |
JPS59225579A (en) * | 1983-06-06 | 1984-12-18 | Sharp Corp | Photoelectric channel switch |
JPS60142946A (en) * | 1983-12-05 | 1985-07-29 | ゼロツクス コーポレーシヨン | Asymmetric squaline compound |
JPS6110540A (en) * | 1983-12-05 | 1986-01-18 | ゼロツクス コ−ポレ−シヨン | Light responsive device containing novel squaline compound |
JPS60130557A (en) * | 1983-12-16 | 1985-07-12 | Fuji Xerox Co Ltd | Novel squarium compound and its preparation |
JPS60174750A (en) * | 1984-01-11 | 1985-09-09 | ゼロツクス コ−ポレ−シヨン | Manufacture of squaline compound |
JPS6187647A (en) * | 1984-09-13 | 1986-05-06 | ゼロツクス コ−ポレ−シヨン | Preparation of mixed squaline compound |
Also Published As
Publication number | Publication date |
---|---|
JPS62267754A (en) | 1987-11-20 |
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