JPH0544026B2 - - Google Patents

Info

Publication number
JPH0544026B2
JPH0544026B2 JP61110618A JP11061886A JPH0544026B2 JP H0544026 B2 JPH0544026 B2 JP H0544026B2 JP 61110618 A JP61110618 A JP 61110618A JP 11061886 A JP11061886 A JP 11061886A JP H0544026 B2 JPH0544026 B2 JP H0544026B2
Authority
JP
Japan
Prior art keywords
formula
group
compound
general formula
represented
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61110618A
Other languages
Japanese (ja)
Other versions
JPS62267754A (en
Inventor
Yutaka Akasaki
Akihiko Tokida
Ishi Kin
Satoru Saeki
Kaoru Torigoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP11061886A priority Critical patent/JPS62267754A/en
Publication of JPS62267754A publication Critical patent/JPS62267754A/en
Publication of JPH0544026B2 publication Critical patent/JPH0544026B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/06Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being organic
    • G03G5/0601Acyclic or carbocyclic compounds
    • G03G5/0609Acyclic or carbocyclic compounds containing oxygen
    • G03G5/0611Squaric acid
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/06Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being organic
    • G03G5/0601Acyclic or carbocyclic compounds
    • G03G5/0618Acyclic or carbocyclic compounds containing oxygen and nitrogen

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  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

〔産業上の利用分野〕 本発明は電子写真プロセスにおいて使用される
電子写真用感光材料の製造方法に関する。更に詳
しくいえば、本発明は光導電材料として用いられ
るスクエアリリウム化合物の製造方法に関する。 〔従来の技術〕 従来、電子写真用感光材料として、無定形セレ
ン、セレン合金、硫化カドミウム、酸化亜鉛等の
無機系感光材料やポリビニルカルバゾール及びポ
リビニルカルバゾール誘導体に代表される有機系
感光材料が広く知られている。 無定形セレン或いはセレン合金は電子写真用感
光材料として極めて優れた特性を有し、実用に供
されていることは周知の通りである。しかし、そ
の製造においては蒸着という煩雑な工程を経ねば
ならず、又製造された蒸着膜は可撓性がないとい
う欠点がある。酸化亜鉛を用いる場合には、酸化
亜鉛を樹脂中に分散させた分散系感光材料として
用いるが、このような感光材料は機械的強度に難
点があり、そのままでは反復使用に耐え得ない。 有機光導電材料として広く知られているポリビ
ニルカルバゾールは透明性、皮膜形成性、可撓性
などの点で優れている利点があるものの、ポリビ
ニルカルバゾール自身は可視光域に感度を持たな
いためにそのままでは実用に供することができ
ず、従つて種々の増感方法が考案されてはいる。
ところが色素増感剤を用いてポリビニルカルバゾ
ールを分光増感した場合には分光感度域は可視光
域にまで拡張されるものの、なお電子写真用感光
体として十分な感度は得られず光疲労が甚しいと
いう欠点を持つ。又、電子受容性化合物を用いて
化学増感した場合には電子写真用感光体として感
度的には十分な感光体が得られ、一部のものは実
用化されているが、なお機械的強度、寿命等に問
題点を残している。 近年、多種類の有機系の感光体が研究され、特
に電荷発生層と電荷輸送層を有する積層型の感光
体が従来のものに比べ優れた電気特性を有するこ
とが報告されている。これらの感光体に用いられ
る電荷発生材料としてはビスアゾ類、トリスアゾ
類、フタロシアニン類、ピリリウム類、スクエア
リリウム類などが知られており、可視領域から近
赤外領域までに感度を有するものとしてはフタロ
シアニン類、トリスアゾ類、スクエアリリウム類
が報告されている。 しかしながらフタロシアニン類は分光感度が長
波長に片寄り赤色再現性に劣るという欠点を有
し、トリスアゾ類は優れた電気特性と充分な感度
を有するにいたつていない。 また特開昭49−105536号等に示されるスクエア
リリウム化合物は比較的高い感度を有するものの
帯電性、暗減衰等の欠点を有し高い感度と低い暗
減衰を両立するに至つていない。 〔発明が解決しようとする問題点〕 本発明の目的は前述の欠点を解消し、可視域か
ら近赤外領域にわたつて分光感度を有し、高感度
で優れた電気特性を有する電子写真用感光材料の
製造方法を提供することにある。 〔問題点を解決するための手段及び作用〕 本発明の目的は下記一般式()で示される非
対称スクエアリリウム化合物からなる電子写真用
感光材料の製造方法により達成することができ
る。 一般式()中、R1及びR2は互に独立したも
のであつて、水素原子、水酸基、メチル基、ハロ
ゲン原子、トリフルオロメチル基またはカルボキ
シル基を表わし、 Xは式
[Industrial Field of Application] The present invention relates to a method for producing an electrophotographic light-sensitive material used in an electrophotographic process. More specifically, the present invention relates to a method for producing a squareryllium compound used as a photoconductive material. [Prior Art] Conventionally, inorganic photosensitive materials such as amorphous selenium, selenium alloys, cadmium sulfide, and zinc oxide, and organic photosensitive materials such as polyvinyl carbazole and polyvinyl carbazole derivatives have been widely known as photosensitive materials for electrophotography. It is being It is well known that amorphous selenium or selenium alloys have extremely excellent properties as electrophotographic light-sensitive materials and are used in practical applications. However, its production requires a complicated step of vapor deposition, and the produced vapor-deposited film has the drawback of not being flexible. When zinc oxide is used, it is used as a dispersed photosensitive material in which zinc oxide is dispersed in a resin, but such a photosensitive material has a drawback in mechanical strength and cannot withstand repeated use as it is. Polyvinylcarbazole, which is widely known as an organic photoconductive material, has excellent advantages in terms of transparency, film-forming properties, and flexibility, but polyvinylcarbazole itself has no sensitivity in the visible light range, so it cannot be used as is. Therefore, various sensitization methods have been devised.
However, when polyvinylcarbazole is spectrally sensitized using a dye sensitizer, the spectral sensitivity range is extended to the visible light range, but it still cannot achieve sufficient sensitivity as a photoreceptor for electrophotography and suffers from severe photofatigue. It has the disadvantage of being In addition, when chemically sensitized using an electron-accepting compound, a photoreceptor with sufficient sensitivity as an electrophotographic photoreceptor can be obtained, and some of them have been put into practical use, but mechanical strength still remains. However, there are still problems in terms of lifespan, etc. In recent years, many types of organic photoreceptors have been studied, and in particular, it has been reported that a laminated type photoreceptor having a charge generation layer and a charge transport layer has superior electrical properties compared to conventional photoreceptors. Known charge-generating materials used in these photoreceptors include bisazos, trisazos, phthalocyanines, pyryliums, and squareryliums, and phthalocyanines are sensitive from the visible region to the near-infrared region. Tris-azo-classes, trisazo-classes, and squarerillium-classes have been reported. However, phthalocyanines have the disadvantage that their spectral sensitivity is biased toward long wavelengths and red color reproducibility is poor, and trisazo compounds have not yet achieved excellent electrical properties and sufficient sensitivity. Furthermore, although the squarylium compounds disclosed in JP-A-49-105536 and the like have relatively high sensitivity, they have drawbacks such as chargeability and dark decay, and have not been able to achieve both high sensitivity and low dark decay. [Problems to be Solved by the Invention] The purpose of the present invention is to solve the above-mentioned drawbacks, and to provide an electrophotographic device that has spectral sensitivity from the visible region to the near-infrared region, and has high sensitivity and excellent electrical properties. An object of the present invention is to provide a method for producing a photosensitive material. [Means and effects for solving the problems] The objects of the present invention can be achieved by a method for producing an electrophotographic light-sensitive material comprising an asymmetric squarerylium compound represented by the following general formula (). In the general formula (), R 1 and R 2 are independent of each other and represent a hydrogen atom, a hydroxyl group, a methyl group, a halogen atom, a trifluoromethyl group, or a carboxyl group, and X is a formula

【式】または[expression] or

〔実施例〕〔Example〕

合成例 3,4−ジクロロ−3−シクロブテン−1,2
−ジオン3.00gと塩化アルミニウム2.65gとを塩
化メチレン30ml中で5℃以下に保ち、塩化アルミ
ニウムが溶解するまで攪拌した。 これに、N,N−ジメチルアニリン2.43gを30
分間で滴下し、その後2.5時間液温を5℃以下に
保つたまま反応させた。反応終了後IM−HCl、
水で洗浄し、次にカラムクロマトグラフイで分離
し、下記式()で示される生成物1.64g(収率
35%)を得た。 次に()の化合物1.56gを氷酢酸30mlと水6
mlの混合溶媒に溶かし2時間加熱還流し、室温ま
で冷却した後析出した結晶を別し、生成物
()1.376g(収率95.7%)を得た。 次に生成物(X)1.00gと3−フルオロ−N,
N−ジメチルアニリン1.92gをブタノール90ml中
で20時間加熱還流した後、反応溶液を室温まで冷
却し析出した結晶を別し、メタノール、エーテ
ルで洗浄した後乾燥して生成物(;具体例No.
1)1.01g(収率64.8%)を得た。 分解点:276℃ 元素分析: 計算値 C70.99%、H5.66%、N8.28% 実測値 C71.05%、H5.74%、N8.29%。 実施例 1 前記具体例No.1の構造式で示される化合物1重
量部にポリエステル樹脂(デユポン製、アドヘツ
シブ49000)1重量部、テトラヒドロフラン10重
量部を加え、ボールミルで4時間粉砕、混合した
分散液をバーコーダーを用いてアルミニウムを蒸
着したポリエステルフイルム〔東レ製、メタルミ
ー(登録商標)〕上に塗布し、70℃で5時間乾燥
させ、膜厚1μの電荷発生層を作成した。 この電荷発生層上に、N,N′−ジフエニル−
N,N′−ビス−(3−メチルフエニル)−(1,
1′−ビフエニル)−4,4′−ジアミン1重量部、
ポリカーボネート樹脂(帝人製、パンライト(登
録商標)〕1重量部、テトラヒドロフラン10重量
部からなる均一溶液をアプリケーターを用いて塗
布し、70℃で16時間乾燥させて厚さ22μの電荷輸
送層を形成し、感光体を作成した。 次に静電複写紙試験装置(川口電機製、エレク
トロスタテイツク・ペーパー・アナライザーSP
−428)を用いて、−6KVのコロナ放電を施して
負帯電させた後、2秒間暗所放置し、続いてタン
グステンランプを用い、表面の照度が10ルツクス
になるように感光層に光照射を施し、その表面電
位が暗所放置後の表面電位VDの1/2になる露光量
E1/2を求めた。その結果は、初期帯電電位V0
−870V、2秒間暗所放置後の電位VDDP=−
750V、E1/2=2.0ルツクス・秒、残留電位Rp
−5Vであつた。 また、長波長の光に対して極めてすぐれた感度
を有することを明らかにするため以下の測定を行
なつた。上記の感光体を暗所でコロナ放電を行い
帯電させた後、モノクロメーターを用いて800nm
に分光した1μW/cm2の単色光を感光体に照射し
た。そしてその表面電位が1/2になるまで時間を
測り、露光量を求めた。その結果10.9ergcm-2
あつた。 実施例 2〜10 実施例1において具体例No.1のスクエアリリウ
ム顔料のかわりに表1のNo.4,5,6,10,12,
13,15,23,27〔それぞれ実施例2〜10〕のスク
エアリリウム顔料を用いたこと以外は実施例1と
同様にして感光体を作成し評価した結果を表1に
示す。
Synthesis example 3,4-dichloro-3-cyclobutene-1,2
- 3.00 g of dione and 2.65 g of aluminum chloride were stirred in 30 ml of methylene chloride while keeping the temperature below 5°C until the aluminum chloride was dissolved. To this, add 2.43 g of N,N-dimethylaniline to 30
The solution was added dropwise for 2.5 hours, and the reaction was continued for 2.5 hours while maintaining the solution temperature at 5° C. or lower. After the reaction, IM-HCl,
Washed with water and then separated by column chromatography to produce 1.64 g of product (yield:
35%). Next, add 1.56 g of the compound () to 30 ml of glacial acetic acid and 6 ml of water.
ml of mixed solvent, heated under reflux for 2 hours, cooled to room temperature, and separated the precipitated crystals to obtain 1.376 g (yield: 95.7%) of product (2). Next, 1.00 g of product (X) and 3-fluoro-N,
After heating and refluxing 1.92 g of N-dimethylaniline in 90 ml of butanol for 20 hours, the reaction solution was cooled to room temperature, the precipitated crystals were separated, washed with methanol and ether, and dried to obtain the product (Example No.
1) 1.01g (yield 64.8%) was obtained. Decomposition point: 276℃ Elemental analysis: Calculated values C70.99%, H5.66%, N8.28% Actual values C71.05%, H5.74%, N8.29%. Example 1 To 1 part by weight of the compound represented by the structural formula of Specific Example No. 1, 1 part by weight of polyester resin (manufactured by Dupont, Adhesive 49000) and 10 parts by weight of tetrahydrofuran were added, and the mixture was ground and mixed in a ball mill for 4 hours to obtain a dispersion. was applied onto a polyester film (Metal Me (registered trademark) manufactured by Toray Industries, Ltd.) on which aluminum had been vapor-deposited using a barcoder, and dried at 70° C. for 5 hours to form a charge generation layer with a thickness of 1 μm. On this charge generation layer, N,N'-diphenyl-
N,N'-bis-(3-methylphenyl)-(1,
1 part by weight of 1'-biphenyl)-4,4'-diamine,
A homogeneous solution consisting of 1 part by weight of polycarbonate resin (manufactured by Teijin, Panlite (registered trademark)) and 10 parts by weight of tetrahydrofuran was applied using an applicator and dried at 70°C for 16 hours to form a charge transport layer with a thickness of 22μ. Next, an electrostatic copying paper testing device (manufactured by Kawaguchi Electric, Electrostatic Paper Analyzer SP) was used.
-428) to negatively charge the photosensitive layer with -6KV corona discharge, leave it in the dark for 2 seconds, and then use a tungsten lamp to irradiate the photosensitive layer with light so that the surface illuminance is 10 lux. The exposure amount E1/2 was determined so that the surface potential was 1/2 of the surface potential V D after being left in the dark. The result is that the initial charging potential V 0 =
-870V, potential after being left in the dark for 2 seconds V DDP = -
750V, E1/2 = 2.0 Lux・sec, residual potential R p =
It was -5V. In addition, the following measurements were performed to demonstrate that the material has extremely high sensitivity to long wavelength light. After charging the above photoreceptor by corona discharge in a dark place, use a monochromator to charge it at 800nm.
The photoreceptor was irradiated with monochromatic light of 1 μW/cm 2 which was divided into 1 μW/cm 2 . The amount of exposure was determined by measuring the time until the surface potential decreased to 1/2. The result was 10.9ergcm -2 . Examples 2 to 10 In Example 1, instead of the squarerium pigment of Specific Example No. 1, No. 4, 5, 6, 10, 12, and
Photoreceptors were prepared and evaluated in the same manner as in Example 1, except that the squarerium pigments Nos. 13, 15, 23, and 27 (Examples 2 to 10, respectively) were used. Table 1 shows the results of evaluation.

〔発明の効果〕〔Effect of the invention〕

本発明は可視域から近赤外領域にわたつて分光
感度を有し、高感度で優れた電気特性を有する非
対称スクエアリリウム化合物からなる電子写真用
感光材料の製造方法を提供したものであり、電荷
発生層2及び電荷輸送層3から成る二層構造の感
光層を含む電子写真用感光体において、本発明に
よるスクエアリリウム化合物を含有した電荷発生
層ならびに公知の電荷輸送層3をもうけることに
よつて、高感度でしかも帯電性、暗減衰等の電気
特性の改善された感光体を製作することができ
る。 これらの非対称スクエアリリウム顔料を利用し
た電子写真感光体は複写機のみならず半導体レー
ザープリンターなどに広く用いることができる。
The present invention provides a method for producing an electrophotographic photosensitive material made of an asymmetric squareryllium compound that has spectral sensitivity from the visible region to the near-infrared region, and has high sensitivity and excellent electrical properties. In an electrophotographic photoreceptor including a photosensitive layer with a two-layer structure consisting of a generation layer 2 and a charge transport layer 3, by providing a charge generation layer containing the squareylium compound according to the present invention and a known charge transport layer 3. , it is possible to produce a photoreceptor with high sensitivity and improved electrical properties such as chargeability and dark decay. Electrophotographic photoreceptors using these asymmetric squarerium pigments can be widely used not only in copying machines but also in semiconductor laser printers and the like.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図及び第2図は、本発明の電子写真感光体
例の断面図である。 図中符号:1……導電性支持体、2……電荷発
生層、3……電荷輸送層、4……感光層。
1 and 2 are cross-sectional views of examples of the electrophotographic photoreceptor of the present invention. Symbols in the figure: 1... conductive support, 2... charge generation layer, 3... charge transport layer, 4... photosensitive layer.

Claims (1)

【特許請求の範囲】 1 式() で示される3,4−ジクロロ−3−シクロブテン
−1,2−ジオンと一般式() (式中、R1は水素原子、水酸基、メチル基、
ハロゲン原子、トリフルオロメチル基またはカル
ボキシル基を表わす。) で示されるアニリン誘導体とを反応させて一般式
() (式中、R1は前記と同じ意味を表わす。) で示される化合物を得、ついで式()の化合物
を加水分解して一般式() (式中、R1は前記と同じ意味を表わす。) で示される化合物を得、この一般式()の化合
物を一般式() [式中、R2は水素原子、水酸基、メチル基、
ハロゲン原子、トリフルオロメチル基またはカル
ボキシル基を表わし、Xは式 【式】または【式】 (式中、R3及びR4は互に独立したものであつ
て、炭素数1〜20のアルキル基を表わし、Zは環
を形成するのに必要な原子群を表わす。)で示さ
れる基を表わす。] で示される化合物と反応させることを特徴とする
一般式() (式中、R1,R2及びXは前記と同じ意味を表
わす。) で示される化合物とすることを特徴とする非対称
スクエアリリウム化合物からなる電子写真用感光
材料の製造方法。 2 式() で示される3,4,−ジクロロ−3−シクロブテ
ン−1,2−ジオンと一般式() [式中、R2は水素原子、水酸基、メチル基、
ハロゲン原子、トリフルオロメチル基またはカル
ボキシル基を表わし、Xは式 【式】または【式】 (式中、R3及びR4は互いに独立したものであ
つて、炭素数1〜20のアルキル基を表わし、Zは
環を形成するのに必要な原子群を表わす。)で示
される基を表わす。] で示される化合物と反応させ、一般式() (式中、R2及びXは前記と同じ意味を表わ
す。) で示される化合物を得、ついで式()の化合物
を加水分解して一般式() (式中、R2及びXは前記と同じ意味を表わ
す。) で示される化合物を得、この一般式()の化合
物を一般式() (式中、R1は水素原子、水酸基、メチル基、
ハロゲン原子、トリフルオロメチル基またはカル
ボキシル基を表わす。) で示されるアニリン誘導体と反応させることを特
徴とする一般式() (式中、R1,R2及びXは前記と同じ意味を表
わす。) で示される化合物とすることを特徴とする非対称
スクエアリリウム化合物からなる電子写真用感光
体材料の製造方法。
[Claims] 1 Formula () 3,4-dichloro-3-cyclobutene-1,2-dione represented by the general formula () (In the formula, R 1 is a hydrogen atom, a hydroxyl group, a methyl group,
Represents a halogen atom, trifluoromethyl group or carboxyl group. ) is reacted with the aniline derivative represented by the general formula (). (In the formula, R 1 represents the same meaning as above.) A compound represented by the formula () is obtained, and then the compound of the formula () is hydrolyzed to obtain the compound of the general formula () (In the formula, R 1 represents the same meaning as above.) A compound represented by the general formula () is obtained, and a compound of the general formula () is [In the formula, R 2 is a hydrogen atom, a hydroxyl group, a methyl group,
Represents a halogen atom, trifluoromethyl group, or carboxyl group, and X represents the formula [Formula] or [Formula] (wherein R 3 and R 4 are mutually independent, and are an alkyl group having 1 to 20 carbon atoms. and Z represents a group of atoms necessary to form a ring. ] General formula () characterized by reacting with a compound represented by (In the formula, R 1 , R 2 and X have the same meanings as above.) A method for producing an electrophotographic light-sensitive material comprising an asymmetric squarerylium compound. 2 formula () 3,4,-dichloro-3-cyclobutene-1,2-dione represented by the general formula () [In the formula, R 2 is a hydrogen atom, a hydroxyl group, a methyl group,
Represents a halogen atom, trifluoromethyl group, or carboxyl group, and X represents the formula [Formula] or [Formula] (wherein R 3 and R 4 are mutually independent, and represent an alkyl group having 1 to 20 carbon atoms. and Z represents a group of atoms necessary to form a ring. ] By reacting with a compound represented by the general formula () (In the formula, R 2 and (In the formula, R 2 and X have the same meanings as above.) (In the formula, R 1 is a hydrogen atom, a hydroxyl group, a methyl group,
Represents a halogen atom, trifluoromethyl group or carboxyl group. ) General formula () characterized by reacting with an aniline derivative represented by (In the formula, R 1 , R 2 and X have the same meanings as above.) A method for producing an electrophotographic photoreceptor material comprising an asymmetric squarerylium compound.
JP11061886A 1986-05-16 1986-05-16 Electrophotographic sensitive material and its production Granted JPS62267754A (en)

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Application Number Priority Date Filing Date Title
JP11061886A JPS62267754A (en) 1986-05-16 1986-05-16 Electrophotographic sensitive material and its production

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JP11061886A JPS62267754A (en) 1986-05-16 1986-05-16 Electrophotographic sensitive material and its production

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JPS62267754A JPS62267754A (en) 1987-11-20
JPH0544026B2 true JPH0544026B2 (en) 1993-07-05

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JP11061886A Granted JPS62267754A (en) 1986-05-16 1986-05-16 Electrophotographic sensitive material and its production

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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5992768A (en) * 1982-11-18 1984-05-29 Nippon Telegr & Teleph Corp <Ntt> Drive circuit for switching power source
JPS59225571A (en) * 1983-06-03 1984-12-18 Sumitomo Electric Ind Ltd field effect transistor
JPS59225577A (en) * 1983-06-06 1984-12-18 Semiconductor Energy Lab Co Ltd Semiconductor device manufacturing method
JPS59225579A (en) * 1983-06-06 1984-12-18 Sharp Corp Photoelectric channel switch
JPS60130557A (en) * 1983-12-16 1985-07-12 Fuji Xerox Co Ltd Novel squarium compound and its preparation
JPS60142946A (en) * 1983-12-05 1985-07-29 ゼロツクス コーポレーシヨン Asymmetric squaline compound
JPS60174750A (en) * 1984-01-11 1985-09-09 ゼロツクス コ−ポレ−シヨン Manufacture of squaline compound
JPS6110540A (en) * 1983-12-05 1986-01-18 ゼロツクス コ−ポレ−シヨン Light responsive device containing novel squaline compound
JPS6187647A (en) * 1984-09-13 1986-05-06 ゼロツクス コ−ポレ−シヨン Preparation of mixed squaline compound

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5992768A (en) * 1982-11-18 1984-05-29 Nippon Telegr & Teleph Corp <Ntt> Drive circuit for switching power source
JPS59225571A (en) * 1983-06-03 1984-12-18 Sumitomo Electric Ind Ltd field effect transistor
JPS59225577A (en) * 1983-06-06 1984-12-18 Semiconductor Energy Lab Co Ltd Semiconductor device manufacturing method
JPS59225579A (en) * 1983-06-06 1984-12-18 Sharp Corp Photoelectric channel switch
JPS60142946A (en) * 1983-12-05 1985-07-29 ゼロツクス コーポレーシヨン Asymmetric squaline compound
JPS6110540A (en) * 1983-12-05 1986-01-18 ゼロツクス コ−ポレ−シヨン Light responsive device containing novel squaline compound
JPS60130557A (en) * 1983-12-16 1985-07-12 Fuji Xerox Co Ltd Novel squarium compound and its preparation
JPS60174750A (en) * 1984-01-11 1985-09-09 ゼロツクス コ−ポレ−シヨン Manufacture of squaline compound
JPS6187647A (en) * 1984-09-13 1986-05-06 ゼロツクス コ−ポレ−シヨン Preparation of mixed squaline compound

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