JPH095793A - Liquid crystal display device - Google Patents
Liquid crystal display deviceInfo
- Publication number
- JPH095793A JPH095793A JP8201516A JP20151696A JPH095793A JP H095793 A JPH095793 A JP H095793A JP 8201516 A JP8201516 A JP 8201516A JP 20151696 A JP20151696 A JP 20151696A JP H095793 A JPH095793 A JP H095793A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- electrodes
- electrode
- display device
- crystal display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明はOA機器等の画像,
文字情報の表示装置として用いられる、アクティブマト
リックス方式の液晶表示装置の構造に関する。TECHNICAL FIELD The present invention relates to an image of an OA device,
The present invention relates to the structure of an active matrix type liquid crystal display device used as a display device for character information.
【0002】[0002]
【従来の技術】ガラス等の絶縁基板上に薄膜トランジス
タ(以下TFTと記す)をマトリックス状に形成し、こ
れをスイッチング素子として用いるアクティブマトリッ
クス型の液晶表示装置(TFT−LCD)は高画質のフ
ラットパネルディスプレイとして期待が大きい。従来の
アクティブマトリックス型液晶表示装置では、液晶層を
駆動する電極として2枚の基板上に形成し対向させた透
明電極を用いていた。これは液晶に印加する電界の方向
を基板面にほぼ垂直な方向とすることで動作するツイス
テッドネマチック表示方式に代表される表示方式を採用
していることによる。2. Description of the Related Art An active matrix type liquid crystal display device (TFT-LCD) in which thin film transistors (hereinafter referred to as TFTs) are formed in a matrix on an insulating substrate such as glass and used as switching elements is a flat panel of high image quality. Expectations are high as a display. In the conventional active matrix type liquid crystal display device, transparent electrodes formed on two substrates and facing each other are used as electrodes for driving the liquid crystal layer. This is because a display system typified by a twisted nematic display system that operates by making the direction of the electric field applied to the liquid crystal substantially perpendicular to the substrate surface is adopted.
【0003】一方、液晶に印加する電界の方向を基板面
にほぼ平行な方向とする方式として、櫛歯電極を用いた
方式が特公昭63−21907 号に開示されている。On the other hand, as a method for making the direction of the electric field applied to the liquid crystal substantially parallel to the substrate surface, a method using comb-teeth electrodes is disclosed in Japanese Patent Publication No. 63-21907.
【0004】[0004]
【発明が解決しようとする課題】上記の従来技術は液晶
層を相互に咬合する櫛歯状の電極により駆動するもので
あるが、駆動電極として櫛歯状の電極を用いたので光が
透過できる有効面積(以下開口率という)を大きくする
ことが困難である。原理的には櫛歯電極の電極幅を1〜
2μm程度まで縮小すれば開口率を実用レベルまで拡大
できるが、実際には大型基板全面にわたってそのような
細線を均一にかつ断線がないように形成することは極め
て困難である。即ち、上記の従来技術では、相互に咬合
する櫛歯状の電極を用いたために画素開口率と製造歩留
まりがトレードオフの関係となり、明るい画像を有する
液晶表示装置を低コストで提供することは困難であっ
た。In the above-mentioned prior art, the liquid crystal layer is driven by the comb-teeth-shaped electrodes that interlock with each other. However, since the comb-teeth-shaped electrodes are used as the drive electrodes, light can be transmitted. It is difficult to increase the effective area (hereinafter referred to as the aperture ratio). In principle, the electrode width of the comb-teeth electrode should be 1 to
Although the aperture ratio can be increased to a practical level by reducing it to about 2 μm, it is actually extremely difficult to form such fine lines uniformly over the entire surface of a large-sized substrate without any breakage. That is, in the above-described conventional technique, since the comb-teeth-shaped electrodes that interlock with each other are used, there is a trade-off relationship between the pixel aperture ratio and the manufacturing yield, and it is difficult to provide a liquid crystal display device having a bright image at low cost. Met.
【0005】本発明は上記の問題を解決するものであっ
て、その目的は、より製造歩留まりが高くかつ開口率が
高い、明るい液晶表示装置を提供することにある。The present invention solves the above problems, and an object thereof is to provide a bright liquid crystal display device having a higher manufacturing yield and a higher aperture ratio.
【0006】[0006]
【課題を解決するための手段】本発明によれば、液晶表
示装置の一対の基板の一方の基板には、複数の走査信号
電極と、それらにマトリクス状に交差する複数の映像信
号電極と、これらの電極のそれぞれの交点に対応して形
成された複数の薄膜トランジスタとを有している。According to the present invention, a plurality of scanning signal electrodes and a plurality of video signal electrodes intersecting them in a matrix are provided on one substrate of a pair of substrates of a liquid crystal display device. It has a plurality of thin film transistors formed corresponding to respective intersections of these electrodes.
【0007】複数の走査信号電極及び映像信号電極で囲
まれるそれぞれの領域で少なくとも一つの画素が構成さ
れ、それぞれの画素には、複数の画素に渡って接続部に
よって接続された複数の共通電極と、これらの共通電極
間に配置され対応する薄膜トランジスタに接続される少
なくとも一本の画素電極とを有している。At least one pixel is formed in each region surrounded by the plurality of scanning signal electrodes and the video signal electrodes, and each pixel includes a plurality of common electrodes connected by a connecting portion over the plurality of pixels. , And at least one pixel electrode arranged between these common electrodes and connected to the corresponding thin film transistor.
【0008】複数の共通電極は、隣接する画素間で対応
する映像信号電極を挟むように隣接配置され、共通電極
と画素電極とに印加される電圧により、液晶層には基板
に平行な電界が発生する。The plurality of common electrodes are arranged adjacent to each other so as to sandwich the corresponding video signal electrode between adjacent pixels, and an electric field parallel to the substrate is generated in the liquid crystal layer by the voltage applied to the common electrode and the pixel electrode. appear.
【0009】好ましくは、共通電極上には絶縁層が形成
され、この絶縁層に複数の映像信号電極が形成される。
また、共通電極と走査信号電極とは同一の層に形成され
る。画素電極の一部を共通電極の接続部上に絶縁層を介
して重ね合わせ、この重ね合わさった部分により付加容
量をが形成してもよい。Preferably, an insulating layer is formed on the common electrode, and a plurality of video signal electrodes are formed on this insulating layer.
Further, the common electrode and the scanning signal electrode are formed in the same layer. A part of the pixel electrode may be overlapped on the connection part of the common electrode via an insulating layer, and the overlapped part may form an additional capacitance.
【0010】共通電極に実施態様によれば、その表面は
自己酸化膜または自己窒化膜で被覆されている。According to an embodiment, the common electrode has its surface coated with a self-oxidizing film or a self-nitriding film.
【0011】更に、画素電極または共通電極の形状は、
環状型,十字型,T字型,Π字型,工字型,梯子型のい
ずれかの形状であってもよい。Further, the shape of the pixel electrode or the common electrode is
The shape may be any one of a ring shape, a cross shape, a T shape, a Π shape, a work shape, and a ladder shape.
【0012】本発明によれば、共通電極を映像信号電極
を挟むように隣接配置することにより、開口率(光が透
過する開口部の面積割合)を高くすることができる。ま
た、画素電極と共通電極の少なくとも一部を絶縁膜を介
して互いに重畳させ付加容量を形成することにより画素
開口率を更に高くでき、かつ電圧保持特性を改善でき
る。According to the present invention, by arranging the common electrodes so as to be adjacent to each other so as to sandwich the video signal electrode, it is possible to increase the aperture ratio (the area ratio of the openings through which light is transmitted). Further, the pixel aperture ratio can be further increased and the voltage holding characteristic can be improved by forming at least a part of the pixel electrode and the common electrode on each other through the insulating film to form the additional capacitance.
【0013】更に、共通電極と映像信号電極または、共
通電極と画素電極を互いに絶縁膜より異層化することに
より、これらの電極相互間の短絡不良は発生する確率が
小さくできるので画素欠陥を低減できる。Further, by making the common electrode and the video signal electrode different from each other or the common electrode and the pixel electrode different from each other by an insulating film, it is possible to reduce the probability of occurrence of a short circuit defect between these electrodes, thereby reducing pixel defects. it can.
【0014】共通電極または画素電極の形状としては、
なるべく開口率が大きくなるようなパターンを採用する
ことが望ましい。そこで、画素電極または共通電極を、
環状型,十字型,T字型,Π字型,工字型,梯子型のい
ずれかの平面形状とし、開口率が最大となるような電極
形状の設計が容易となる。The shape of the common electrode or the pixel electrode is as follows.
It is desirable to adopt a pattern that maximizes the aperture ratio. Therefore, the pixel electrode or the common electrode is
It is easy to design an electrode shape that maximizes the aperture ratio by using any one of a ring shape, a cross shape, a T shape, a Π shape, a work shape shape, and a ladder shape.
【0015】また、共通電極をその表面が自己酸化膜ま
たは自己窒化膜で被覆された金属電極によって構成する
ことにより、共通電極と画素電極を互いに重ねあわせた
時にこれらの間の短絡不良の発生を防止できるので画素
欠陥を低減できる。Further, by forming the common electrode by a metal electrode whose surface is covered with a self-oxidizing film or a self-nitriding film, when the common electrode and the pixel electrode are overlapped with each other, a short circuit between them may not occur. Since it can be prevented, pixel defects can be reduced.
【0016】[0016]
〔実施例1〕図1〜図4は本発明の第1の実施例の動作
原理を示す単位画素の断面図及び平面図である。ガラス
基板1上にCrよりなるゲート電極10およびコモン電
極(共通電極)16を形成し、これらの電極を覆うよう
に窒化シリコン(SiN)膜からなるゲート絶縁膜20
を形成した。ゲート電極(走査信号電極)10上にゲー
ト絶縁膜20上を介して非晶質シリコン(a−Si)膜
30を形成しトランジスタの能動層とする。前記a−S
i膜30のパターンの一部に重畳するようにMoよりな
るドレイン電極(映像信号電極)14,ソース電極(画
素電極)15を形成し、これらすべてを被覆するように
SiN膜よりなる保護絶縁膜23を形成した。以上より
なる単位画素をマトリックス状に配置したアクティブマ
トリックス基板の表面にポリイミドよりなる配向膜OR
I1,ORI2を形成し、表面にラビング処理を施し
た。同じくラビング処理を施した配向膜ORI1,OR
I2を表面に形成した対向基板508と、前記アクティ
ブマトリックス基板の間に棒状の液晶分子513を含む
液晶組成物を封入し、二枚の基板の外表面に偏光板50
5を配置した。液晶分子513は無電界時(図1および
図2)にはストライプ状のソース電極15およびコモン
電極16の長手方向に対して若干の角度、即ち液晶分子
の長軸(光学軸)と電界の方向(ソース電極とコモン電
極の長手方向に垂直)のなす角度にして45°以上90
°未満を持つように配向されている。尚、上下基板との
界面での液晶分子の配向は互いに平行とした。また、液
晶分子の誘電異方性は正である。ここで、TFTのゲー
ト電極10に電圧を印加してTFTをオンとするとソー
ス電極15に電圧が印加し、ソース電極15−コモン電
極16間に電界E1を誘起させると、図3および図4に
示すように電界方向に液晶分子が向きを変える。上下基
板の表面に配置した2枚の偏光板505の偏光透過軸を
所定角度AGL1に配置することで電界印加によって光
の透過率を変化させることが可能になる。このように、
本発明の表示方式では従来必要であった透明電極がなく
てもコントラストを与える表示が可能となる。このた
め、透明電極の形成に関わる工程を全て省略できるので
製造コスト削減が可能となる。さらに、従来の透明電極
を用いる表示方式では、電圧印加により液晶分子の長軸
を基板界面から立ち上がらせ複屈折位相差を0とするこ
とで暗状態を得ているが、複屈折位相差が0となる視角
方向は正面、即ち基板界面に垂直な方向のみであり、僅
かでも傾くと副屈折位相差が現れ、ノーマリーオープン
型の表示では光が漏れコントラストの低下や階調レベル
の反転を引き起こす。ところが、本実施例の表示方式で
は液晶分子の長軸は基板とほぼ平行であり電圧を印加し
ても立ち上がることがない、従って視角方向を変えたと
きの明るさの変化が小さく視角特性が大幅に改善される
効果がある。[Embodiment 1] FIGS. 1 to 4 are a sectional view and a plan view of a unit pixel showing the operating principle of the first embodiment of the present invention. A gate electrode 10 and a common electrode (common electrode) 16 made of Cr are formed on a glass substrate 1, and a gate insulating film 20 made of a silicon nitride (SiN) film is formed so as to cover these electrodes.
Was formed. An amorphous silicon (a-Si) film 30 is formed on the gate electrode (scanning signal electrode) 10 via the gate insulating film 20 to serve as an active layer of the transistor. The a-S
A drain electrode (video signal electrode) 14 and a source electrode (pixel electrode) 15 made of Mo are formed so as to overlap a part of the pattern of the i film 30, and a protective insulating film made of a SiN film so as to cover all of them. 23 was formed. An alignment film OR made of polyimide is formed on the surface of an active matrix substrate having unit pixels arranged in a matrix.
I1 and ORI2 were formed, and the surface was rubbed. Alignment films ORI1 and OR which have been similarly rubbed
A liquid crystal composition containing rod-shaped liquid crystal molecules 513 is enclosed between the counter substrate 508 having I2 formed on the surface and the active matrix substrate, and the polarizing plate 50 is provided on the outer surfaces of the two substrates.
5 was arranged. When there is no electric field (FIGS. 1 and 2), the liquid crystal molecules 513 have a slight angle with respect to the longitudinal direction of the stripe-shaped source electrode 15 and the common electrode 16, that is, the major axis (optical axis) of the liquid crystal molecules and the direction of the electric field. The angle formed by (perpendicular to the longitudinal direction of the source electrode and the common electrode) is 45 ° or more 90
Oriented to have less than °. The alignment of the liquid crystal molecules at the interface with the upper and lower substrates was parallel to each other. Moreover, the dielectric anisotropy of the liquid crystal molecules is positive. Here, when a voltage is applied to the gate electrode 10 of the TFT to turn on the TFT, a voltage is applied to the source electrode 15 and an electric field E1 is induced between the source electrode 15 and the common electrode 16. As shown, the liquid crystal molecules turn in the direction of the electric field. By arranging the polarization transmission axes of the two polarizing plates 505 arranged on the surfaces of the upper and lower substrates at a predetermined angle AGL1, it becomes possible to change the light transmittance by applying an electric field. in this way,
With the display system of the present invention, it is possible to provide a display that gives contrast without the need for a transparent electrode, which has been conventionally required. For this reason, it is possible to omit all the steps related to the formation of the transparent electrode, so that the manufacturing cost can be reduced. Further, in the conventional display method using a transparent electrode, the dark state is obtained by raising the major axis of liquid crystal molecules from the substrate interface by applying a voltage and setting the birefringence phase difference to 0, but the birefringence phase difference is 0. The viewing angle direction is only the front direction, that is, the direction perpendicular to the substrate interface, and if it is tilted even slightly, a sub-refraction phase difference appears, and light leaks in a normally open type display, which lowers the contrast and inverts the gradation level. . However, in the display system of the present embodiment, the long axis of the liquid crystal molecules is almost parallel to the substrate and does not rise even when a voltage is applied. Therefore, the change in brightness when the viewing angle direction is changed is small and the viewing angle characteristics are large. Has the effect of being improved.
【0017】さらに、本実施例ではコモン電極16をゲ
ート電極10と同一のレイヤーに形成し、ドレイン電極
14および液晶駆動電極であるソース電極15とコモン
電極16をゲート絶縁膜20によって絶縁分離した。ま
た、従来使用されていた櫛歯状電極を廃し、ソース電極
15とコモン電極16をゲート絶縁膜20を介して重畳
させた。このようにドレイン電極14およびソース電極
15とコモン電極16を絶縁分離することによりソース
電極15およびコモン電極16の平面パターンの設計自
由度が大きくなり画素開口率を向上させることが可能と
なる。また、ソース電極15とコモン電極16の重畳部
は液晶容量と並列に接続される付加容量として作用する
ので液晶印加電圧の保持能を向上させることができる。
このような効果は従来の櫛歯状電極では得られないもの
であり、ドレイン電極14およびソース電極15とコモ
ン電極16を絶縁分離することにより初めて達成され
る。以上のように、ドレイン電極14およびソース電極
15とコモン電極16を異層化することにより平面パタ
ーンの設計自由度が大きくなったので、電極形状として
は本実施例に限らず多種多彩な構造が採用できる。Further, in this embodiment, the common electrode 16 is formed in the same layer as the gate electrode 10, and the drain electrode 14, the source electrode 15 which is a liquid crystal driving electrode, and the common electrode 16 are insulated and separated by the gate insulating film 20. Further, the comb-teeth-shaped electrode which has been conventionally used is abolished, and the source electrode 15 and the common electrode 16 are superposed with the gate insulating film 20 interposed therebetween. By insulating the drain electrode 14 and the source electrode 15 from the common electrode 16 in this manner, the degree of freedom in designing the plane pattern of the source electrode 15 and the common electrode 16 is increased, and the pixel aperture ratio can be improved. Further, since the overlapping portion of the source electrode 15 and the common electrode 16 acts as an additional capacitance connected in parallel with the liquid crystal capacitance, the ability to hold the liquid crystal applied voltage can be improved.
Such an effect cannot be obtained by the conventional comb-teeth-shaped electrode, and is achieved only by insulating the drain electrode 14 and the source electrode 15 from the common electrode 16. As described above, since the drain electrode 14 and the source electrode 15 and the common electrode 16 are formed in different layers, the degree of freedom in designing the plane pattern is increased. Therefore, the electrode shape is not limited to this embodiment, and various structures are possible. Can be adopted.
【0018】〔実施例2〕図5は本発明の第2の実施例
の単位画素の平面図を示す。本実施例の断面構造は前記
第1の実施例(図1)と同様である。本実施例ではコモ
ン電極16を十字型とし、一方ソース電極15はリング
型とした点に特徴がある。コモン電極16とソース電極
15はC1,C2,C3,C4と記した箇所で互いに重
なり付加容量を形成している。本実施例によれば、コモ
ン電極16とゲート電極10の間の距離を大きくとれる
のでコモン電極16とゲート電極10間の短絡不良を防
止できる。また、ソース電極15をリング型にすること
により、ソース電極の任意の箇所で断線が発生しても2
箇所以上の断線がないかぎりソース電極全体に給電さ
れ、正常な動作が可能である。即ち、本構造は断線に対
し冗長性をもち歩留まりを向上させることができる。[Embodiment 2] FIG. 5 is a plan view of a unit pixel according to a second embodiment of the present invention. The sectional structure of this embodiment is the same as that of the first embodiment (FIG. 1). The present embodiment is characterized in that the common electrode 16 has a cross shape, while the source electrode 15 has a ring shape. The common electrode 16 and the source electrode 15 are overlapped with each other at the portions marked C1, C2, C3 and C4 to form an additional capacitance. According to this embodiment, the distance between the common electrode 16 and the gate electrode 10 can be made large, so that a short circuit failure between the common electrode 16 and the gate electrode 10 can be prevented. Further, by making the source electrode 15 a ring type, even if a disconnection occurs at any place of the source electrode,
Unless there is a break in more than one place, power is supplied to the entire source electrode and normal operation is possible. That is, this structure has redundancy against disconnection and can improve the yield.
【0019】〔実施例3〕図6は本発明の第3の実施例
の単位画素の平面図を示す。本実施例の断面構造は前記
第1の実施例(図1)と同様である。本実施例では、ソ
ース電極15は第2の実施例と同様にリング型とし、コ
モン電極16をT字型とした点に特徴がある。本実施例
では、リング状のソース電極の短辺の一方とコモン電極
が重なるようにすることにより、開口率を低下させるこ
と無く大きな付加容量を形成でき、電圧保持特性を改善
できる。また、水平方向のコモン電極を光透過領域内か
ら排除したので画素開口率向上に有利である。[Embodiment 3] FIG. 6 is a plan view of a unit pixel according to a third embodiment of the present invention. The sectional structure of this embodiment is the same as that of the first embodiment (FIG. 1). The present embodiment is characterized in that the source electrode 15 is ring-shaped and the common electrode 16 is T-shaped as in the second embodiment. In this embodiment, one of the short sides of the ring-shaped source electrode is overlapped with the common electrode, so that a large additional capacitance can be formed without lowering the aperture ratio and the voltage holding characteristic can be improved. Further, the common electrode in the horizontal direction is excluded from the light transmitting region, which is advantageous for improving the pixel aperture ratio.
【0020】〔実施例4〕図7は本発明の第4の実施例
の単位画素の平面図を示す。本実施例の断面構造は前記
第1の実施例(図1)と同様である。本実施例では、ソ
ース電極15は第2の実施例と同様にリング型とし、コ
モン電極16を工字型とした点に特徴がある。本実施例
では、リング状のソース電極の2つの短辺とコモン電極
が重なるようにすることにより、開口率を低下させるこ
と無くより大きな付加容量を形成でき、電圧保持特性を
改善できる。[Embodiment 4] FIG. 7 is a plan view of a unit pixel according to a fourth embodiment of the present invention. The sectional structure of this embodiment is the same as that of the first embodiment (FIG. 1). The present embodiment is characterized in that the source electrode 15 is of a ring type and the common electrode 16 is of a letter-shaped type as in the second embodiment. In this embodiment, by making the two short sides of the ring-shaped source electrode and the common electrode overlap, a larger additional capacitance can be formed without lowering the aperture ratio, and the voltage holding characteristic can be improved.
【0021】〔実施例5〕図8は本発明の第5の実施例
の単位画素の平面図を示す。本実施例の断面構造は前記
第1の実施例(図1)と同様である。本実施例では、コ
モン電極16はΠ字型とし、ソース電極15をT字型と
した。本実施例は前記第2〜第4の実施例とはことな
り、画素の中央にソース電極15を、その左右両側にコ
モン電極16を配置した点に特徴がある。このような配
置の利点は、コモン電極16とドレイン電極14がゲー
ト絶縁膜により分離されているためにこれらの電極の間
の距離を小さくできる点にある。これにより、コモン電
極16をドレイン電極14にできる限り近付けることに
より光透過領域を拡大でき開口率を向上させることがで
きる。ただし、この時コモン電極16とドレイン電極1
4が重なると、これらの電極間の寄生容量が急激に増大
する。コモン電極とドレイン電極の間の過大な寄生容量
はコモン電極信号の波形歪をもたらし、スミアと呼ばれ
る画質低下が発生するので望ましくない。したがって、
コモン電極とドレイン電極は可能な限り近付けても良い
が決して重ならないようにすることが必要である。[Embodiment 5] FIG. 8 is a plan view of a unit pixel according to a fifth embodiment of the present invention. The sectional structure of this embodiment is the same as that of the first embodiment (FIG. 1). In this embodiment, the common electrode 16 has a Π shape and the source electrode 15 has a T shape. The present embodiment is different from the second to fourth embodiments in that the source electrode 15 is arranged at the center of the pixel and the common electrodes 16 are arranged on the left and right sides thereof. The advantage of such an arrangement is that the common electrode 16 and the drain electrode 14 are separated by the gate insulating film, so that the distance between these electrodes can be reduced. As a result, the light transmitting region can be expanded and the aperture ratio can be improved by bringing the common electrode 16 close to the drain electrode 14. However, at this time, the common electrode 16 and the drain electrode 1
When 4 overlap, the parasitic capacitance between these electrodes increases rapidly. An excessive parasitic capacitance between the common electrode and the drain electrode causes waveform distortion of the common electrode signal, which causes deterioration of image quality called smear, which is not desirable. Therefore,
The common electrode and the drain electrode may be brought as close as possible, but it is necessary that they never overlap.
【0022】〔実施例6〕図9は本発明の第6の実施例
の単位画素の平面図を示す。本実施例の断面構造は前記
第1の実施例(図1)と同様である。本実施例では、ソ
ース電極15を工字型とし、コモン電極16はリング型
とした点に特徴がある。本実施例では前記第5の実施例
と同様に開口率を向上させることができることに加え、
ソース電極15とコモン電極16の重なりを大きくでき
るので付加容量を大きくできる。[Embodiment 6] FIG. 9 is a plan view of a unit pixel according to a sixth embodiment of the present invention. The sectional structure of this embodiment is the same as that of the first embodiment (FIG. 1). The present embodiment is characterized in that the source electrode 15 has a letter-letter shape and the common electrode 16 has a ring shape. In this embodiment, in addition to being able to improve the aperture ratio as in the fifth embodiment,
Since the overlap between the source electrode 15 and the common electrode 16 can be increased, the additional capacitance can be increased.
【0023】〔実施例7〕図10は本発明の第7の実施
例の単位画素の平面図を示す。本実施例の断面構造は前
記第1の実施例(図1)と同様である。本実施例では、
ソース電極15をはしご型とし、コモン電極16はリン
グ型として互いに重ね合わせた構造を有し、前記第1〜
第6の実施例と異なり液晶を駆動する電界は画素の長手
方向と平行な方向とした点に特徴がある。本実施例で
は、はしご型電極の段数を変えることによりコモン電極
16とソース電極15間のギャップを任意に変えること
ができる。電極間ギャップは液晶の応答速度を決めるの
で、ギャップを任意に調節することにより所望の応答速
度を得ることが可能となる。[Embodiment 7] FIG. 10 is a plan view of a unit pixel according to a seventh embodiment of the present invention. The sectional structure of this embodiment is the same as that of the first embodiment (FIG. 1). In this embodiment,
The source electrode 15 is a ladder type, and the common electrode 16 is a ring type and has a structure in which they are stacked on each other.
Unlike the sixth embodiment, it is characterized in that the electric field for driving the liquid crystal is in the direction parallel to the longitudinal direction of the pixel. In the present embodiment, the gap between the common electrode 16 and the source electrode 15 can be arbitrarily changed by changing the number of ladder electrodes. Since the gap between the electrodes determines the response speed of the liquid crystal, it is possible to obtain a desired response speed by adjusting the gap arbitrarily.
【0024】以上のように、コモン電極とソース電極,
ドレイン電極を異層化することにより多種多様な電極形
状の設計が可能となり、用途に応じた表示性能を実現す
ることができる。As described above, the common electrode and the source electrode,
By forming the drain electrode in different layers, it is possible to design a wide variety of electrode shapes, and display performance according to the application can be realized.
【0025】以上の実施例ではコモン電極をゲート電極
と同一の電極材料で構成する場合を示してきたが、コモ
ン電極またはソース電極を複数の電極を組み合わせて構
成しても良い。以下、そのような実施例を示す。In the above embodiments, the common electrode is made of the same electrode material as the gate electrode, but the common electrode or the source electrode may be made of a combination of a plurality of electrodes. Hereinafter, such an example is shown.
【0026】〔実施例8〕図11は本発明の第8の実施
例の単位画素の平面図を示す。図12は図11中B−
B′における断面図を示す。本実施例ではコモン電極は
引出配線160とコモン側駆動電極161の2つの部材
によって構成され、これらはゲート絶縁膜20に設けた
スルーホールTHを介して接続されている。ここで引出
配線160にはゲート電極10と同一の電極材料を、コ
モン側駆動電極161にはソース電極15と同一の電極
材料を用いた。本実施例においてもコモン電極の引出配
線160とソース電極15はゲート絶縁膜20によって
異層化されているため、互いに交差させることができ交
差部Cstにおいて付加容量を構成し、保持特性を改善
できる。また、コモン側駆動電極161をソース電極1
5と同一層内に形成することにより、ソース電極15と
隣接するドレイン電極14との間で形成される不必要な
電界をシールドすることが可能となる。液晶の駆動に直
接関与しない電極によって形成される寄生電界は液晶の
配向を乱し、表示画像のコントラスト低下を招くので、
通常電極の周囲を遮光層によって隠すことによって対策
している。しかしこのような遮光層は開口率を低下させ
るという欠点を持つ。これにたいして本実施例のよう
に、液晶の配向を乱す寄生電界をシールドすることによ
り遮光層の面積を縮小できるので開口率を向上させるこ
とが可能となる。[Embodiment 8] FIG. 11 is a plan view of a unit pixel according to an eighth embodiment of the present invention. FIG. 12 shows B- in FIG.
The sectional view in B'is shown. In this embodiment, the common electrode is composed of two members, that is, the lead-out wiring 160 and the common-side drive electrode 161, which are connected via the through hole TH provided in the gate insulating film 20. Here, the same electrode material as that of the gate electrode 10 was used for the lead-out wiring 160, and the same electrode material as that of the source electrode 15 was used for the common side drive electrode 161. Also in the present embodiment, since the common electrode lead-out wiring 160 and the source electrode 15 are made different layers by the gate insulating film 20, they can be crossed with each other and an additional capacitance can be formed at the crossing portion Cst to improve the retention characteristic. . In addition, the common side drive electrode 161 is connected to the source electrode 1
By forming it in the same layer as 5, the unnecessary electric field formed between the source electrode 15 and the adjacent drain electrode 14 can be shielded. Since the parasitic electric field formed by the electrodes that are not directly involved in driving the liquid crystal disturbs the alignment of the liquid crystal and causes a reduction in the contrast of the displayed image,
A measure is usually taken by hiding the periphery of the electrode with a light shielding layer. However, such a light-shielding layer has a drawback of reducing the aperture ratio. On the other hand, as in the present embodiment, the area of the light shielding layer can be reduced by shielding the parasitic electric field that disturbs the alignment of the liquid crystal, so that the aperture ratio can be improved.
【0027】〔実施例9〕図13は本発明の第9の実施
例の単位画素の平面図を示す。図14は図13中C−
C′における断面図を示す。本実施例ではコモン電極の
引出配線160は、前記第7の実施例と同様にゲート電
極10と同一の電極材料で構成し、コモン側駆動電極1
61は保護絶縁膜23上に設けた新たな電極によって構
成し、これらをスルーホールによって接続した。本実施
例ではコモン電極は引出配線160,コモン側駆動電極
161ともにソース電極15と絶縁分離されているので
前記の実施例と同様な効果がある。[Embodiment 9] FIG. 13 is a plan view of a unit pixel according to a ninth embodiment of the present invention. FIG. 14 shows C- in FIG.
The sectional view in C'is shown. In this embodiment, the common electrode lead wiring 160 is made of the same electrode material as the gate electrode 10 as in the seventh embodiment, and the common side drive electrode 1
Reference numeral 61 is composed of a new electrode provided on the protective insulating film 23, and these are connected by a through hole. In this embodiment, since the common electrode is insulated from the source electrode 15 in both the extraction wiring 160 and the common side drive electrode 161, the same effect as the above embodiment can be obtained.
【0028】〔実施例10〕前記実施例ではコモン電極
のコモン側駆動電極161は保護絶縁膜23上に設けた
電極によって構成したが、コモン側駆動電極はゲート電
極10の下層に設けても良い。図15は本発明の第10
の実施例の単位画素の平面図を示す。図16は図15中
D−D′における断面図を示す。本実施例ではコモン電
極の引出配線160は、前記第7の実施例と同様にゲー
ト電極10と同一の電極材料で構成し、コモン側駆動電
極161はゲート電極10の下層に絶縁膜24を介して
設けた新たな電極によって構成し、これらをスルーホー
ルによって接続した。本実施例ではコモン電極は引出配
線160,コモン側駆動電極161ともにソース電極1
5と絶縁分離されているので前記の実施例と同様な効果
がある。[Embodiment 10] In the above embodiment, the common side drive electrode 161 of the common electrode is constituted by the electrode provided on the protective insulating film 23, but the common side drive electrode may be provided in the lower layer of the gate electrode 10. . FIG. 15 shows the tenth aspect of the present invention.
3 is a plan view of a unit pixel of the example of FIG. FIG. 16 is a sectional view taken along the line DD ′ in FIG. In this embodiment, the common electrode lead-out wiring 160 is made of the same electrode material as the gate electrode 10 as in the seventh embodiment, and the common side drive electrode 161 is provided below the gate electrode 10 with the insulating film 24 interposed therebetween. It was constructed by new electrodes provided by the above, and these were connected by through holes. In this embodiment, the common electrode is the lead wire 160 and the common side drive electrode 161 is the source electrode 1
Since it is electrically isolated from No. 5, it has the same effect as the above-mentioned embodiment.
【0029】〔実施例11〕図17は本発明の第11の
実施例の単位画素の平面図を示す。図18は図17中E
−E′における断面図を示す。本実施例ではコモン電極
16はゲート電極10の下層に下地絶縁膜24を介して
設けた新たな電極によって構成した。従って、コモン電
極はゲート電極10およびソース電極15,ドレイン電
極14の全てと異層化される。そこで、本実施例はコモ
ン電極16をゲート電極と平行な方向だけでなくゲート
電極と垂直な方向にも引出して網目状とすることが可能
となる。このことにより、コモン電極の抵抗値を下げら
れるのでコモン電圧の波形歪を低減しスミアの発生を防
止できる効果がある。[Embodiment 11] FIG. 17 is a plan view of a unit pixel according to an eleventh embodiment of the present invention. FIG. 18 shows E in FIG.
-E 'shows a cross-sectional view. In this embodiment, the common electrode 16 is composed of a new electrode provided below the gate electrode 10 with the underlying insulating film 24 interposed therebetween. Therefore, the common electrode is formed in a different layer from all of the gate electrode 10, the source electrode 15, and the drain electrode 14. Therefore, in this embodiment, the common electrode 16 can be drawn not only in the direction parallel to the gate electrode but also in the direction perpendicular to the gate electrode to form a mesh shape. As a result, the resistance value of the common electrode can be lowered, so that the waveform distortion of the common voltage can be reduced and the smear can be prevented.
【0030】〔実施例12〕図19は本発明の第12の
実施例の単位画素の平面図を示す。図20は図19中F
−F′における断面図を示す。本実施例ではコモン電極
16は保護絶縁膜23上に設けた新たな電極によって構
成した。本実施例においても、前記実施例11と同様に
コモン電極はゲート電極10およびソース電極15,ド
レイン電極14の全てと異層化されるので、コモン電極
16をゲート電極と平行な方向だけでなくゲート電極と
垂直な方向にも引出して網目状とすることが可能となり
コモン電圧の波形歪を低減しスミアの発生を防止でき
る。[Embodiment 12] FIG. 19 is a plan view of a unit pixel according to a twelfth embodiment of the present invention. FIG. 20 shows F in FIG.
A sectional view at -F 'is shown. In this embodiment, the common electrode 16 is composed of a new electrode provided on the protective insulating film 23. Also in this embodiment, the common electrode is formed in a different layer from all of the gate electrode 10, the source electrode 15, and the drain electrode 14 in the same manner as in the eleventh embodiment, so that the common electrode 16 is not limited to the direction parallel to the gate electrode. It is also possible to draw out in a direction perpendicular to the gate electrode to form a mesh shape, reduce the waveform distortion of the common voltage, and prevent the occurrence of smear.
【0031】〔実施例13〕図21は本発明の第13の
実施例の単位画素の断面図を示す。本実施例の平面図は
前記実施例1と同様である。本実施例ではゲート電極1
0およびコモン電極16はアルミニウム(Al)で構成
され、その表面はAlの自己酸化膜であるアルミナ(A
l2O3)21によって被覆されている点に特徴がある。
このような2層絶縁膜構造を採用することによりコモン
電極16とドレイン,ソース電極との絶縁不良が低減で
きるので画素欠陥を低減できる。[Embodiment 13] FIG. 21 is a sectional view of a unit pixel according to a thirteenth embodiment of the present invention. The plan view of this embodiment is similar to that of the first embodiment. In this embodiment, the gate electrode 1
0 and the common electrode 16 are made of aluminum (Al), and the surface thereof is made of alumina (A
It is characterized in that it is covered with 1 2 O 3 ) 21.
By adopting such a two-layer insulating film structure, it is possible to reduce defective insulation between the common electrode 16 and the drain and source electrodes, and thus it is possible to reduce pixel defects.
【0032】〔実施例14〕図22は本発明の第14の
実施例の単位画素の平面図を示す。図23は図22のG
−G′断面図である。本実施例ではコモン電極16はタ
ンタル(Ta)で構成し、その表面はTaの自己酸化膜
である五酸化タンタル(Ta2O5)22によって被覆し
た。また、コモン電極16上のソース電極15と対向す
る側のゲート絶縁膜20および保護絶縁膜23をエッチ
ング除去した点に特徴がある。比誘電率が23と大きい
Ta2O5を露出させることによりソース電極側に電束を
集中できるのでより低い印加電圧で液晶を駆動させるこ
とができる。[Embodiment 14] FIG. 22 is a plan view of a unit pixel according to a fourteenth embodiment of the present invention. FIG. 23 shows G of FIG.
It is a -G 'sectional view. In this embodiment, the common electrode 16 is made of tantalum (Ta), and the surface of the common electrode 16 is covered with tantalum pentoxide (Ta 2 O 5 ) 22 which is a self-oxidation film of Ta. Another feature is that the gate insulating film 20 and the protective insulating film 23 on the side facing the source electrode 15 on the common electrode 16 are removed by etching. By exposing Ta 2 O 5 having a large relative permittivity of 23, the electric flux can be concentrated on the source electrode side, so that the liquid crystal can be driven with a lower applied voltage.
【0033】図24は本発明のアクティブマトリックス
基板鏡の等価回路を含む平面模式図である。ガラス基板
1上にゲート電極10とドレイン電極14とこれらに接
続されたTFTとゲート電極10に平行に引き出された
コモン電極16とゲート電極ドレイン電極およびコモン
電極の引出端子101,151,163が形成されたも
のである。引出端子はゲート電極10,ドレイン電極1
4およびコモン電極16に外部回路から信号を供給する
ための端子である。FIG. 24 is a schematic plan view including an equivalent circuit of the active matrix substrate mirror of the present invention. On the glass substrate 1, a gate electrode 10 and a drain electrode 14, a TFT connected to them, a common electrode 16 extended in parallel to the gate electrode 10, a gate electrode drain electrode, and extraction terminals 101, 151, 163 of the common electrode are formed. It was done. Lead-out terminals are gate electrode 10 and drain electrode 1
4 and the common electrode 16 are terminals for supplying a signal from an external circuit.
【0034】図25はアクティブマトリックス部の画素
配列の平面図である。図25では単位画素として図9に
示したものを使用した。各画素はゲート電極10が延在
する方向と同一方向に複数配置され、画素列X1,X
2,X3…のそれぞれを構成している。各画素列X1,
X2,X3…のそれぞれの画素は薄膜トランジスタTFT
1,コモン電極16およびソース電極15の配置位置を
同一に構成している。ドレイン電極14はゲート電極1
0と交差するように配置され各画素列の内の1個の画素
に接続されている。FIG. 25 is a plan view of the pixel array of the active matrix portion. In FIG. 25, the unit pixel shown in FIG. 9 was used. A plurality of pixels are arranged in the same direction as the direction in which the gate electrode 10 extends, and the pixel columns X1 and X1 are arranged.
2, X3 ... Each pixel row X1,
Each pixel of X2, X3 ... Is a thin film transistor TFT
1, the common electrode 16 and the source electrode 15 are arranged at the same position. The drain electrode 14 is the gate electrode 1
It is arranged so as to intersect with 0 and is connected to one pixel in each pixel column.
【0035】図26は本発明の液晶表示装置のセル断面
図である。下側のガラス基板1上にゲート電極10とド
レイン電極14がマトリックス状に形成され、その交点
付近に形成されたTFTを介してソース電極15を駆動
する。棒状の液晶分子513を含む液晶層を挾んで対向
する対向基板508上にはカラーフィルタ507,カラ
ーフィルタ保護膜511,遮光用ブラックマトリックス
512が形成されている。図26の中央部は単位画素の
断面図を、左側は外部接続端子の存在する部分の断面図
を、右側は外部接続端子の存在しない部分の断面図を示
している。図26の右側,左側に示すシール材SLは液
晶層を封止するように構成されており、液晶封入口(図
示せず)を除くガラス基板1,508の縁全体に沿って
形成されている。シール材は例えばエポキシ樹脂で形成
されている。配向制御膜ORI1,ORI2,保護絶縁
膜23,カラーフィルタ保護膜511の各層はシール材
SLの内側に形成される。偏光板505は一対のガラス
基板1,508の外側表面に形成されている。液晶層内
の液晶分子513は配向制御膜ORI1,ORI2によって
所定の方向に配向されており、バックライトBLからの
光をソース電極15とコモン電極16の間の部分の液晶
層で調節することによりカラー画像の表示が可能とな
る。FIG. 26 is a cell sectional view of the liquid crystal display device of the present invention. The gate electrode 10 and the drain electrode 14 are formed in a matrix on the lower glass substrate 1, and the source electrode 15 is driven through the TFT formed near the intersection. A color filter 507, a color filter protective film 511, and a light-shielding black matrix 512 are formed on a counter substrate 508 which faces the liquid crystal layer including rod-shaped liquid crystal molecules 513. The central part of FIG. 26 is a sectional view of a unit pixel, the left side is a sectional view of a portion where external connection terminals are present, and the right side is a sectional view of a portion where external connection terminals are not present. The sealing material SL shown on the right side and the left side of FIG. 26 is configured to seal the liquid crystal layer, and is formed along the entire edges of the glass substrates 1 and 508 excluding the liquid crystal sealing port (not shown). . The sealing material is made of, for example, an epoxy resin. The orientation control films ORI1, ORI2, the protective insulating film 23, and the color filter protective film 511 are formed inside the sealing material SL. The polarizing plate 505 is formed on the outer surface of the pair of glass substrates 1 and 508. The liquid crystal molecules 513 in the liquid crystal layer are aligned in a predetermined direction by the alignment control films ORI1 and ORI2, and the light from the backlight BL is adjusted by the liquid crystal layer between the source electrode 15 and the common electrode 16. A color image can be displayed.
【0036】[0036]
【発明の効果】以上のように本発明によれば、複数の共
通電極を、隣接する画素間で対応する映像信号電極を挟
むように隣接配置することにより、開口率が高い液晶表
示装置が実現できる。As described above, according to the present invention, a liquid crystal display device having a high aperture ratio is realized by arranging a plurality of common electrodes so as to sandwich a corresponding video signal electrode between adjacent pixels. it can.
【図1】本発明に係る液晶表示装置の第1の実施例の電
界無印加時の画素平面模式図。FIG. 1 is a schematic plan view of a pixel of a liquid crystal display device according to a first embodiment of the present invention when no electric field is applied.
【図2】本発明に係る液晶表示装置の第1の実施例の電
界無印加時の画素断面模式図。FIG. 2 is a schematic sectional view of a pixel of the liquid crystal display device according to the first embodiment of the present invention when no electric field is applied.
【図3】本発明に係る液晶表示装置の第1の実施例の電
界印加時の画素平面模式図。FIG. 3 is a schematic plan view of a pixel when an electric field is applied to the liquid crystal display device according to the first embodiment of the present invention.
【図4】本発明に係る液晶表示装置の第1の実施例の電
界印加時の画素断面模式図。FIG. 4 is a schematic sectional view of a pixel when an electric field is applied in the first embodiment of the liquid crystal display device according to the present invention.
【図5】本発明に係る液晶表示装置の第2の実施例の電
界無印加時の画素平面図。FIG. 5 is a pixel plan view of the second embodiment of the liquid crystal display device according to the present invention when no electric field is applied.
【図6】本発明に係る液晶表示装置の第3の実施例の電
界無印加時の画素平面図。FIG. 6 is a plan view of a pixel of a liquid crystal display device according to a third embodiment of the present invention when no electric field is applied.
【図7】本発明に係る液晶表示装置の第4の実施例の電
界無印加時の画素平面図。FIG. 7 is a plan view of a pixel of the fourth embodiment of the liquid crystal display device according to the present invention when no electric field is applied.
【図8】本発明に係る液晶表示装置の第5の実施例の電
界無印加時の画素平面図。FIG. 8 is a plan view of a pixel of a liquid crystal display device according to a fifth embodiment of the present invention when no electric field is applied.
【図9】本発明に係る液晶表示装置の第6の実施例の電
界無印加時の画素平面図。FIG. 9 is a plan view of a pixel of a liquid crystal display device according to a sixth embodiment of the present invention when no electric field is applied.
【図10】本発明に係る液晶表示装置の第7の実施例の
電界無印加時の画素平面図。FIG. 10 is a pixel plan view of a liquid crystal display device according to a seventh embodiment of the present invention when no electric field is applied.
【図11】本発明に係る液晶表示装置の第8の実施例の
電界無印加時の画素平面図。FIG. 11 is a plan view of a pixel of the eighth embodiment of the liquid crystal display device according to the present invention when no electric field is applied.
【図12】本発明に係る液晶表示装置の第8の実施例の
電界無印加時の画素断面図。FIG. 12 is a cross-sectional view of pixels of an eighth embodiment of the liquid crystal display device according to the present invention when no electric field is applied.
【図13】本発明に係る液晶表示装置の第9の実施例の
電界無印加時の画素平面図。FIG. 13 is a plan view of a pixel of a liquid crystal display device according to a ninth embodiment of the present invention when no electric field is applied.
【図14】本発明に係る液晶表示装置の第9の実施例の
電界無印加時の画素断面図。FIG. 14 is a cross-sectional view of pixels of a liquid crystal display device according to a ninth embodiment of the present invention when no electric field is applied.
【図15】本発明に係る液晶表示装置の第10の実施例
の電界無印加時の画素平面図。FIG. 15 is a pixel plan view of the tenth embodiment of the liquid crystal display device according to the present invention when no electric field is applied.
【図16】本発明に係る液晶表示装置の第10の実施例
の電界無印加時の画素断面図。FIG. 16 is a pixel cross-sectional view of a liquid crystal display device according to a tenth embodiment of the present invention when no electric field is applied.
【図17】本発明に係る液晶表示装置の第11の実施例
の電界無印加時の画素平面図。FIG. 17 is a pixel plan view of the eleventh embodiment of the liquid crystal display device according to the present invention when no electric field is applied.
【図18】本発明に係る液晶表示装置の第11の実施例
の電界無印加時の画素断面図。FIG. 18 is a pixel cross-sectional view of an eleventh embodiment of a liquid crystal display device according to the present invention when no electric field is applied.
【図19】本発明に係る液晶表示装置の第12の実施例
の電界無印加時の画素平面図。FIG. 19 is a plan view of a pixel of the liquid crystal display device according to the twelfth embodiment of the present invention when no electric field is applied.
【図20】本発明に係る液晶表示装置の第12の実施例
の電界無印加時の画素断面図。FIG. 20 is a pixel cross-sectional view of a twelfth embodiment of a liquid crystal display device according to the present invention when no electric field is applied.
【図21】本発明に係る液晶表示装置の第13の実施例
の電界無印加時の画素断面図。FIG. 21 is a pixel cross-sectional view of a liquid crystal display device according to a thirteenth embodiment of the present invention when no electric field is applied.
【図22】本発明に係る液晶表示装置の第14の実施例
の電界無印加時の画素平面図。FIG. 22 is a pixel plan view of the fourteenth embodiment of the liquid crystal display device according to the present invention when no electric field is applied.
【図23】本発明に係る液晶表示装置の第14の実施例
の電界無印加時の画素断面図。FIG. 23 is a pixel cross-sectional view of a fourteenth embodiment of a liquid crystal display device according to the present invention when no electric field is applied.
【図24】本発明に係る液晶表示装置の等価回路を示す
平面図。FIG. 24 is a plan view showing an equivalent circuit of the liquid crystal display device according to the present invention.
【図25】本発明に係る液晶表示装置の表示部TFTマ
トリックス部の平面図。FIG. 25 is a plan view of a display TFT matrix portion of the liquid crystal display device according to the present invention.
【図26】本発明に係る液晶表示装置のセル断面図。FIG. 26 is a cell cross-sectional view of a liquid crystal display device according to the present invention.
1…ガラス基板、10…ゲート電極、14…ドレイン電
極、15…ソース電極、16…コモン電極、20…ゲー
ト絶縁膜、21…アルミナ膜、22…五酸化タンタル
膜、23…保護絶縁膜、24…下地絶縁膜、30…非晶
質シリコン膜、101…ゲート電極の引出し端子、14
1…ドレイン電極の引出し端子、160…コモン電極の
引出配線、161…コモン側駆動電極、505…偏光
板、507…カラーフィルタ、508…対向基板、51
1…カラーフィルタ保護膜、512…遮光用ブラックマ
トリックス、513…液晶分子、ORI1,ORI2…
配向膜、SL…シール材、C1,C2,C3,C4,C
st…付加容量、TH…スルーホール、E1…液晶駆動
電界。DESCRIPTION OF SYMBOLS 1 ... Glass substrate, 10 ... Gate electrode, 14 ... Drain electrode, 15 ... Source electrode, 16 ... Common electrode, 20 ... Gate insulating film, 21 ... Alumina film, 22 ... Tantalum pentoxide film, 23 ... Protective insulating film, 24 ... Base insulating film, 30 ... Amorphous silicon film, 101 ... Gate electrode lead terminal, 14
DESCRIPTION OF SYMBOLS 1 ... Lead-out terminal of drain electrode, 160 ... Lead-out wiring of common electrode, 161 ... Common side drive electrode, 505 ... Polarizing plate, 507 ... Color filter, 508 ... Counter substrate, 51
1 ... Color filter protective film, 512 ... Black matrix for shading, 513 ... Liquid crystal molecules, ORI1, ORI2 ...
Alignment film, SL ... Sealing material, C1, C2, C3, C4, C
st ... additional capacitance, TH ... through hole, E1 ... liquid crystal driving electric field.
Claims (12)
た液晶層とを有する液晶表示装置において、 前記一対の基板の一方の基板には、複数の走査信号電極
と、それらにマトリクス状に交差する複数の映像信号電
極と、これらの電極のそれぞれの交点に対応して形成さ
れた複数の薄膜トランジスタとを有し、 前記複数の走査信号電極及び映像信号電極で囲まれるそ
れぞれの領域で少なくとも一つの画素が構成され、それ
ぞれの画素には、複数の画素に渡って接続部によって接
続された複数の共通電極と、これらの共通電極間に配置
され対応する薄膜トランジスタに接続される少なくとも
一本の画素電極とを有し、前記複数の共通電極は、隣接
する画素間で対応する映像信号電極を挟むように隣接配
置され、 前記共通電極と前記画素電極とに印加される電圧によ
り、前記液晶層には前記基板に平行な電界が発生するこ
とを特徴とする液晶表示装置。1. A liquid crystal display device comprising a pair of substrates and a liquid crystal layer sandwiched between the pair of substrates, wherein one of the pair of substrates has a plurality of scanning signal electrodes and a matrix of scanning signal electrodes formed thereon. A plurality of video signal electrodes intersecting with each other, and a plurality of thin film transistors formed corresponding to the respective intersections of these electrodes, at least in each region surrounded by the plurality of scanning signal electrodes and video signal electrodes One pixel is configured, and each pixel includes a plurality of common electrodes connected by a connecting portion across the plurality of pixels and at least one common electrode arranged between these common electrodes and connected to a corresponding thin film transistor. A pixel electrode, the plurality of common electrodes are arranged adjacent to each other so as to sandwich a corresponding video signal electrode between adjacent pixels, and the common electrode and the pixel electrode are connected to each other. The voltage to be pressurized, wherein the liquid crystal layer liquid crystal display device characterized by parallel electric field is generated in the substrate.
極と、これらの映像信号電極に隣接配置された前記複数
の共通電極とは絶縁層を介して形成されていることを特
徴とする液晶表示装置。2. The liquid crystal according to claim 1, wherein the plurality of video signal electrodes and the plurality of common electrodes adjacent to the video signal electrodes are formed through an insulating layer. Display device.
に前記絶縁層が形成されていることを特徴とする液晶表
示装置。3. The liquid crystal display device according to claim 2, wherein the insulating layer is formed on the plurality of common electrodes.
数の映像信号電極が形成されていることを特徴とする液
晶表示装置。4. The liquid crystal display device according to claim 3, wherein the plurality of video signal electrodes are formed on the insulating layer.
記複数の共通電極と前記複数の走査信号電極とは同一の
層に形成されていることを特徴とする液晶表示装置。5. A liquid crystal display device according to claim 1, wherein the plurality of common electrodes and the plurality of scanning signal electrodes are formed in the same layer.
極上には前記絶縁層が形成されていることを特徴とする
液晶表示装置。6. The liquid crystal display device according to claim 5, wherein the insulating layer is formed on the plurality of scanning signal electrodes.
画素電極の一部は、前記複数の共通電極の前記接続上に
絶縁層を介して重ね合わさり、この重ね合わさった部分
により付加容量が形成されることを特徴とする液晶表示
装置。7. The at least one pixel electrode according to claim 1, wherein a part of the at least one pixel electrode is superposed on the connection of the plurality of common electrodes via an insulating layer, and the superposed part forms an additional capacitance. And a liquid crystal display device.
には前記絶縁層が形成されていることを特徴とする液晶
表示装置。8. The liquid crystal display device according to claim 7, wherein the insulating layer is formed on the plurality of common electrodes.
通電極と前記複数の走査信号電極とは同一の層に形成さ
れ、前記走査信号電極上に前記絶縁層が形成されている
ことを特徴とする液晶表示装置。9. The method according to claim 7, wherein the plurality of common electrodes and the plurality of scanning signal electrodes are formed in the same layer, and the insulating layer is formed on the scanning signal electrodes. Liquid crystal display device.
上に前記少なくとも一本の画素電極が形成されているこ
とを特徴とする液晶表示装置。10. The liquid crystal display device according to claim 8 or 9, wherein the at least one pixel electrode is formed on the insulating layer.
記複数の映像信号電極が形成されていることを特徴とす
る液晶表示装置。11. The liquid crystal display device according to claim 10, wherein the plurality of video signal electrodes are formed on the insulating layer.
て、前記複数の共通電極はその表面が自己酸化膜または
自己窒化膜で被覆されていることを特徴とする液晶表示
装置。12. The liquid crystal display device according to claim 1, wherein a surface of each of the plurality of common electrodes is covered with a self-oxidation film or a self-nitridation film.
Priority Applications (1)
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JP20151696A JP2701832B2 (en) | 1996-07-31 | 1996-07-31 | Liquid crystal display |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20151696A JP2701832B2 (en) | 1996-07-31 | 1996-07-31 | Liquid crystal display |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17882593A Division JP2701698B2 (en) | 1993-07-20 | 1993-07-20 | Liquid crystal display |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH095793A true JPH095793A (en) | 1997-01-10 |
JP2701832B2 JP2701832B2 (en) | 1998-01-21 |
Family
ID=16442348
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP20151696A Expired - Lifetime JP2701832B2 (en) | 1996-07-31 | 1996-07-31 | Liquid crystal display |
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JP (1) | JP2701832B2 (en) |
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