JPH0974148A - Multi-chip module and manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a multi-chip module that copes with the global environmental problem as the pollution by lead or the pollution of the air, and the method of manufacturing. SOLUTION: A multi-chip module is provided with an inorganic multi-layer wiring board 6, a semiconductor element 7 that is mounted on the surface of the multi-layer wiring board 6 in face down type and a metal cap 9 that seals the semiconductor element inside and the edge end of the opening of it is hermetically sealed to the surface of the multi-layer wiring board 6, and the semiconductor element 7 is provided with bump 7b on the surface of an electrode 7a. The bump 7b is press-fit and fixed to a conductive paste layer 10 that is prepared on the surface of a conductive pad 6a on the multi-layer wiring board 6, electrically connected and mounted, and the metal cap 9 is hermetically sealed with the irradiation of a laser beam.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multi-chip module and a method for manufacturing the same, and more particularly to a multi-chip module and a method for manufacturing the same that can eliminate or reduce environmental problems such as lead pollution or air pollution.

[0002]

2. Description of the Related Art A multi-chip module used in electronic equipment such as a large-sized computer and an image processing apparatus generally has a structure shown in FIG. That is, an inorganic-based multilayer wiring board 1, for example, a ceramic multilayer wiring board having a wiring pattern including a conductor pad 1a to be connected in a predetermined area of one main surface, and a conductor pad 1a of the multilayer wiring board 1 are provided. The semiconductor element 2 to which the corresponding Al electrodes 2a are electrically connected and mounted (face-down type mounting) and the mounting area of the semiconductor element 2 are integrally provided on the surface of the multilayer wiring board 1 so as to surround the mounting area. Opening edge on 3 faces of weld ring (or sealing pattern)
4a is soldered and hermetically sealed, and a metal cap 4 for sealing the semiconductor element 2 is provided.

Here, the multilayer wiring board 1 uses, for example, alumina as an interlayer insulating layer, and has a required signal wiring pattern layer or the like.
1b is provided as an inner layer, pattern layers are appropriately connected, and input / output pads 1c and 1c 'and an input / output lead 1c attached with Ag solder 1d are provided. Further, the electrical connection / mounting of the Al electrode 2a of the semiconductor element 2 to the conductor pad 1a of the multilayer wiring board 1 is performed by solder bumps (Sn / Pb: 10:
/ 90) 2b is soldered (Sn / Pb: 63/37) 5a to the surface of the conductor pad 1a. Further, the opening edge 4a of the metal cap 4 is also hermetically sealed by soldering (Sn / Pb: 63/37) 5b on the seal ring pattern 3 surface made of, for example, Kovar or Fe / Ni42 alloy. . And
In the above configuration, eutectic solder with a high Pb component ratio is used in consideration of solder wettability, and in order to ensure the reliability of the multichip module, the mounting of the solder 5a of the semiconductor element 2 and the metal cap 4 are performed. After sealing with the solder 5b, it is cleaned with an organic solvent so that no residue of the flux component remains.

[0004]

However, the multi-chip module having the above-described structure and the method for manufacturing the same have the following inconvenient problems in practical use. That is, mounting and mounting of the semiconductor element 2 and hermetic sealing with the metal cap 4 are performed by soldering using Pb-based solder. Therefore, in the manufacturing process of the multi-chip module, the work environment is polluted or deteriorated due to Pb vapor generated during soldering, so improvement and improvement of equipment is required, which inevitably leads to cost increase. Raise a problem.

Further, as described above, Pb is harmful to the human body due to neuropathy and carcinogenicity, so its management system is important, and it cannot be easily disposed of. That is,
Not only the problem of working environment in the manufacturing process, but also handling as electronic parts or electronic equipment system,
Disposal of damaged electronic components will also be restricted. For example, if the discarded electronic components are exposed to rain (acid rain), Pb will dissolve and penetrate into the ground, and as a result groundwater will contain Pb. Therefore, when drinking groundwater containing Pb, the drinker may cause nerve confusion, impair reproductive function, cause anemia or hypertension, and may act as a carcinogen. . Considering these circumstances, it is already under consideration in the US and other countries to add a tax to electronic devices and electronic components containing Pb, which apparently increases product costs and reduces market cost competitiveness. There is an unavoidable situation.

Further, for cleaning without leaving a residue of the above-mentioned flux component, for example, CFC or 1-1-1 trichloroethane is effective, but in consideration of so-called ozone layer destruction problem, other organic solvent is used. When it is used, it is difficult to wash without leaving a residue of the flux component, and there is a problem in terms of ensuring productivity and long-term reliability.

In any case, when the global environmental problems such as air pollution caused by lead pollution or ozone layer depletion are taken into consideration, the conventional multichip module structure and its manufacturing method are in the direction of being reviewed, and , Although efforts have been made for that purpose, relatively low cost and practical means have not been known yet.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a multi-chip module and a method for manufacturing the same that effectively cope with global environmental problems such as lead pollution or air pollution.

[0009]

According to a first aspect of the present invention, an inorganic multi-layer wiring board, a semiconductor element mounted face down on the surface of the multi-layer wiring board, and the semiconductor element are enclosed. A multi-chip module comprising a metal cap whose opening edge is hermetically sealed on the surface of a multilayer wiring board, wherein the semiconductor element has bumps on the electrode surface, and the bumps are conductors of the multilayer wiring board. Multi-chip module characterized in that it is electrically connected and mounted by press-fitting and fixing to the conductive paste layer installed on the pad surface, and the metal cap is hermetically sealed by laser beam irradiation. Is.

According to a second aspect of the present invention, an inorganic multi-layer wiring board, a semiconductor element mounted face down on the surface of the multi-layer wiring board, and the semiconductor element are enclosed to form a multi-layered opening edge portion. A multichip module comprising a metal cap hermetically sealed on a wiring board surface, wherein the semiconductor element has bumps on an electrode surface, and the bumps are placed on a conductor pad surface of a multilayer wiring board. The multi-chip module is characterized in that it is electrically connected and mounted by press-fitting / fixing to the conductive paste layer, and the metal cap is hermetically sealed by the seam weld method.

According to a third aspect of the present invention, a step of providing a conductive paste layer on a conductor pad surface of a surface of an inorganic type multilayer wiring board having a required weld ring layer, and an electrode surface on the conductor pad surface of the multilayer wiring board. Positioning the semiconductor element face down by positioning and matching the bumps provided above,
A step of pressing the semiconductor element against the surface of the multilayer wiring board to press-in / embed the bumps provided on the electrode surface in the conductive paste layer, and curing the conductive paste layer with the bumps pressed / embedded to electrically And a mechanically connecting step, and a step of aligning an opening edge portion of a metal cap with a weld ring layer on the surface of the multilayer wiring board and hermetically sealing with a laser beam irradiation. Is a manufacturing method.

According to a fourth aspect of the present invention, a step of providing a conductive paste layer on a conductor pad surface of an inorganic type multilayer wiring board surface having a required weld ring layer, and an electrode surface on the conductor pad surface of the multilayer wiring board. Positioning the semiconductor element face down by positioning and matching the bumps provided above,
A step of pressing the semiconductor element against the surface of the multilayer wiring board to press-in and embed the bumps provided on the electrode surface in the conductive paste layer; and curing the conductive paste layer with the bumps pressed-in and electrically. And a step of mechanically connecting, and a step of aligning the opening edge of the metal cap with the weld ring layer of the multilayer wiring board and hermetically sealing with a seam weld method. It is a manufacturing method.

According to a fifth aspect of the present invention, there is provided a step of producing an inorganic multi-layer wiring board having a conductor pad to be connected and a weld ring layer in a predetermined region of the uppermost layer surface by a co-firing or green sheet process; A step of providing a conductive paste layer on the conductor pad surface of the wiring board, and a step of positioning the semiconductor elements face down on the conductor pad surface of the multilayer wiring board by positioning and matching bumps provided on the electrode surface, A step of pressing the semiconductor element against the surface of the multilayer wiring board to press-in and embed the bumps provided on the electrode surface in the conductive paste layer; and curing the conductive paste layer with the bumps pressed-in and electrically. And the step of mechanically connecting, and aligning the opening edge of the metal cap with the weld ring layer of the multilayer wiring board, and irradiating with a laser beam. A method for producing a multi-chip module and a step of sealing the. According to the invention of claim 6, a step of manufacturing an inorganic multilayer wiring board having a conductor pad for connection and a weld ring layer in a predetermined region of the uppermost layer surface by co-firing or a green sheet process; A step of providing a conductive paste layer on the conductor pad surface, a step of positioning the semiconductor element face down on the conductor pad surface of the multilayer wiring board by positioning bumps provided on the electrode surface and corresponding to each other; Pressing on the surface of the multilayer wiring board to press-in and embed the bumps provided on the electrode surface in the conductive paste layer, and curing the conductive paste layer in the state where the bumps are pressed in and embedded to electrically and mechanically And a step of aligning the opening edge of the metal cap with the weld ring layer of the multilayer wiring board and hermetically sealing by the seam weld method. It is a method of manufacturing a multi-chip module was painting.

According to a seventh aspect of the present invention, there is provided a process of manufacturing an inorganic multilayer wiring board having a weld ring layer for forming an uppermost layer pattern including a conductor pad to be connected by a thin film wiring process, and a conductor of the multilayer wiring board. A step of providing a conductive paste layer on the pad surface, on the conductor pad surface of the multilayer wiring board surface,
Positioning and matching the bumps provided on the electrode surface to place the semiconductor element face down, and pressing the semiconductor element against the surface of the multilayer wiring board to press the bumps provided on the electrode surface into the conductive paste layer. The step of embedding, the step of curing the conductive paste layer with the bumps being press-fitted / embedded to electrically and mechanically connect, and the opening end of the metal cap on the weld ring layer on the surface of the multilayer wiring board. And a step of aligning the edges and hermetically sealing by laser beam irradiation.

According to an eighth aspect of the present invention, there is provided a step of manufacturing an inorganic multilayer wiring board having a weld ring layer for forming an uppermost layer pattern including a conductor pad for connection by a thin film wiring process, and a conductor of the multilayer wiring board. A step of providing a conductive paste layer on the pad surface, on the conductor pad surface of the multilayer wiring board surface,
Positioning and matching the bumps provided on the electrode surface to place the semiconductor element face down, and pressing the semiconductor element against the surface of the multilayer wiring board to press the bumps provided on the electrode surface into the conductive paste layer. The step of embedding, the step of curing the conductive paste layer with the bumps being press-fitted / embedded to electrically and mechanically connect, and the opening end of the metal cap on the weld ring layer on the surface of the multilayer wiring board. And a step of aligning the edges and hermetically sealing by the seam weld method.

In the above multi-chip module and the method for manufacturing the same, the bumps on the semiconductor element electrode surface are made of, for example, Au, Cu or Ni, or a conductive sphere layer of Au, Cu or Ni is provided on the elastic spherical surface. It can be also formed by a wire bonding method, a transfer method, or the like.

Further, in the above-mentioned multi-chip module and the manufacturing method thereof, the conductive paste which is arranged on the conductor pad surface of the multilayer wiring board and press-fits the bumps on the semiconductor element electrode surface to form the connection portion is made of Ag or the like. It is a mixture of conductive powder and a heat-resistant resin binder or glass frit, and finally exhibits a cured state at about 200 to 250 ° C or lower. The selective placement on the conductor pad surface can be performed by, for example, a screen printing method, a dispensing method, a transfer method, a direct drawing method, or the like.

According to the first and second aspects of the present invention, the semiconductor elements are mounted and connected by the conductive paste, and the metal caps are sealed by welding, so that high density and high reliability are achieved. Maintains high connection and sealing, and exhibits stable required performance. Further, since the mounting / connecting and sealing are not made of solders, the safety in handling and operation is not easily ensured, and the pollution problem harmful to the human body is avoided.

According to the third and fourth aspects of the invention, the mounting / connection of the semiconductor element and the sealing of the metal cap are not performed by soldering, so that the working environment is greatly improved and the productivity is improved. In addition, since the cleaning step with an organic solvent is omitted, it is possible to provide a highly reliable multi-chip module with a high yield while solving a general pollution problem. Although common to the following manufacturing methods, the fact that the cleaning step with an organic solvent can be omitted here also eliminates the problem of flux residue when cleaning using solder, and contributes greatly to improving the reliability of the multichip module. At the same time, there will be no global environmental problems that would lead to ozone depletion.

According to the fifth and sixth aspects of the present invention, since the multilayer wiring board is formed by the simultaneous firing or the green sheet process, the mounting and connection of the semiconductor element and the sealing of the metal cap are not performed by soldering. The productivity will be improved and the work environment will be greatly improved. Further, since the washing step with the organic solvent is omitted, it is possible to provide a highly reliable multi-chip module with a high yield while solving a general pollution problem.

According to the seventh and eighth aspects of the present invention, by forming the conductor pads and the like on the surface of the multilayer wiring board by the thin film method, high density wiring is possible, and it is possible to easily cope with the increase in the number of pins of semiconductor elements. As a result, it is possible to realize compactness by high-density mounting. On the other hand, because the mounting and connection of semiconductor elements and the sealing of metal caps are not performed by soldering,
The productivity will be improved and the work environment will be greatly improved. Also, since the washing step with an organic solvent is omitted,
It is possible to provide a highly reliable multi-chip module with a high yield while solving general pollution problems.

[0022]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below.

Embodiment 1 FIG. 1 is a cross-sectional view showing an example of the main part configuration of a multichip module according to this embodiment. In FIG. 1, reference numeral 6 denotes a co-fired thick film multilayer wiring board using ceramics such as alumina as an insulator, and a conductor to be a connected portion is provided in a predetermined area on one main surface of the thick film multilayer wiring board 6. A wiring pattern including the pad 6a is provided. Reference numeral 7 is a semiconductor element in which Al electrodes 7a corresponding to the conductor pads 6a of the thick film multilayer wiring board 6 are electrically connected and mounted (face-down type mounting), and 8 is a shape surrounding the mounting area of the semiconductor element 7. A weld ring made of, for example, Kovar or Fe / Ni42 alloy, which is integrally brazed with Ag solder 6d on the sealing pattern 6f surface of the thick film multilayer wiring board 6, 9 is the weld ring surface, and the opening edge 9a is It is a metal cap that is welded and hermetically sealed by laser beam irradiation to seal the semiconductor element 7.

The thick-film multilayer wiring board 6 has a signal wiring pattern layer 6b of, for example, tungsten (W), which is required as an interlayer insulating layer made of alumina, for example, and is built in the inner layer, and the pattern layers are appropriately connected. In addition, it has input / output pads 6c, 6c 'and input / output leads 6e attached to Ag solders 6d, 6d' or input / output pins (not shown). In addition, the Al electrode 7a of the semiconductor element 7 is electrically connected to and mounted on the conductor pad 6a of the thick film multilayer wiring board 6 by the Al electrode.
The Au bumps 7b provided on the surface 7a are made of an Ag-based conductive paste 10 using an epoxy resin as a binder component, which is previously arranged on the surface of the conductor pads 6a by a printing method or the like. That is, with respect to the Ag-based conductive paste 10 arranged on the surface of the conductor pad 6a, the Au formed on the surface of the Al electrode 7a of the semiconductor element 7 is provided.
The bumps 7b are arranged (positioned) in correspondence with each other, and in this state, the thick film multilayer wiring board 6 and the semiconductor element 7 are pressed and the Au
The bumps 7b are embedded in the conductive paste 10 and the conductive paste 10 is hardened to be connected and mounted. Further, the opening edge 9a of the metal cap 9 is welded and hermetically sealed by irradiating the surface of the weld ring 8 with a laser beam. Instead of the welding and hermetic sealing by laser beam irradiation, a seam weld method may be used. However, in this case, it is necessary to design the metal cap 9 in such a shape that the edge portion of the metal cap 9 substantially matches the outer peripheral portion of the weld ring 8.

With respect to the multi-chip module having the above-mentioned structure, a usual electrical test and reliability evaluation were conducted, and good results were obtained in all cases. Further, in the manufacturing process, since solder containing Pb or the like is not used, workability or working environment was good. further,
Even if the discarded electronic components are exposed to rain (acid rain), the risk that Pb will dissolve and enter the ground will be completely eliminated, so even if you drank groundwater, human nerve confusion and impaired reproductive function. , No cause of anemia or hypertension, no concern about carcinogenicity. Furthermore, since the cleaning process with an organic solvent can be omitted, the problem of flux residue when cleaning with solder is eliminated, which greatly contributes to the improvement of the reliability of the multi-chip module and also contributes to the global environmental problems that lead to the destruction of the ozone layer. It also suppresses the occurrence of.

Example 2 First, alumina is used as an insulating material and W-based paste is used as a conductor. Simultaneous firing is performed according to a conventional method, or a green sheet process is performed, and a conductor pad for connection and Ag are connected to a predetermined area on the uppermost layer surface. A multilayer wiring board having a welded layer by brazing was manufactured. Then, as in the case of Example 1, a conductive paste layer was provided on the conductor pad surface of the multilayer wiring board. Then, the semiconductor element is placed face down on the conductor pad surface of the multilayer wiring board by positioning and corresponding the bumps provided on the electrode surface, and the semiconductor element is pressed against the multilayer wiring board surface to make the bump conductive. The conductive paste layer was press-fitted / embedded, and in this state, the conductive paste layer was cured to make electrical and mechanical connection. Next, the opening edge portion of the metal cap was aligned with the weld ring layer of the multilayer wiring board and hermetically sealed by laser beam irradiation to prepare a multi-chip module.

When the thus-prepared multi-chip module was subjected to a usual electrical test and reliability evaluation, good results were obtained. Further, in the manufacturing process, since solder containing Pb or the like is not used, workability or working environment was good. further,
Even if the discarded electronic components are exposed to rain (acid rain), the risk that Pb will dissolve and enter the ground will be completely eliminated, so even if you drank groundwater, human nerve confusion and impaired reproductive function. , No cause of anemia or hypertension, no concern about carcinogenicity. Furthermore, since the cleaning process with an organic solvent can be omitted, the problem of flux residue when cleaning with solder is eliminated, which greatly contributes to the improvement of the reliability of the multi-chip module and also contributes to the global environmental problems that lead to the destruction of the ozone layer. It also suppresses the occurrence of.

Similar results were obtained when the seam-welding method was used instead of the laser beam irradiation for air-sealing the metal cap.

Example 3 First, an inner layer wiring type multilayer wiring board was manufactured using alumina as an insulating material and W-based paste as a conductor in accordance with a conventional method, by simultaneous firing or by a green sheet process.
A Cu or Au-based thin film with a thickness of 1 to 5 μm is formed on one main surface of this inner wiring type multilayer wiring board by vapor deposition or sputtering, and this Cu or Au-based thin film is to be connected by photoetching. A top layer pattern including a conductor pad and a sealing pattern was formed. After that, a weld ring layer was formed by Au brazing in a reducing atmosphere furnace. Then, under the same condition setting as in the case of Example 1, an Ag-based conductive paste layer is provided on the conductor pad surface of the multilayer wiring board, and bumps provided on the electrode surface of the semiconductor element are provided on the conductor pad surface. The semiconductor elements were arranged face down by matching and positioning. After that, the semiconductor element is pressed against the surface of the multilayer wiring board to press-in and embed the bumps into the conductive paste layer, and the conductive paste layer is cured while the bumps are pressed-in and embedded to electrically and mechanically connect. Implemented. Next, the opening edge of the metal cap was aligned with the weld ring layer on the surface of the multilayer wiring board, and the multi-chip module was produced by hermetically welding and sealing by laser beam irradiation.

When the above-prepared multi-chip module was subjected to the usual electrical tests and reliability evaluations, good results were obtained. Further, in the manufacturing process, since solder containing Pb or the like is not used, workability or working environment was good. further,
Even if the discarded electronic components are exposed to rain (acid rain), the risk that Pb will dissolve and enter the ground will be completely eliminated, so even if you drank groundwater, human nerve confusion and impaired reproductive function. , No cause of anemia or hypertension, no concern about carcinogenicity. Furthermore, since the cleaning process with an organic solvent can be omitted, the problem of flux residue when cleaning with solder is eliminated, which greatly contributes to the improvement of the reliability of the multi-chip module and also contributes to the global environmental problems that lead to the destruction of the ozone layer. It also suppresses the occurrence of.

Similar results were obtained when the airtight sealing of the metal cap was performed by the seam weld method instead of the laser beam irradiation.

The present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the invention. For example, the multilayer wiring board may be of aluminum nitride type, glass ceramic type, or the like in addition to alumina type, and may have a configuration in which the input / output pins are led out to the one main surface side instead of the input / output leads. Further, in forming Au, Cu, or the like to be formed on the electrode of the semiconductor element, a wire bonding method, a transfer method, a plating method, etc. may be mentioned, and any method may be used.

[0033]

According to the first and second aspects of the present invention, since the mounting, connection and sealing are not performed with solders, it is easy to ensure the safety in handling and operation. , High density and reliable connection, sealing is maintained,
It exhibits stable performance. In addition, when the solder is not used, problems such as obstacles to the human body through groundwater and the like and environmental pollution caused by not using the cleaning solvent can be solved.

According to the inventions of claims 3 and 4,
Not only is the work environment greatly improved and productivity improved, but the cleaning process with an organic solvent is omitted, so a general multi-chip module can be solved while eliminating general pollution problems. It can be provided with high yield. In addition, when the solder is not used, problems such as obstacles to the human body through groundwater and the like and environmental pollution caused by not using the cleaning solvent can be solved.

According to the inventions of claims 5 and 6,
While improving productivity and drastically improving the working environment, the cleaning process with an organic solvent is also omitted, so general pollution problems can be solved and highly reliable multi-chip modules can be manufactured with high yield. Can be provided. In addition, when the solder is not used, problems such as obstacles to the human body through groundwater and the like and environmental pollution caused by not using the cleaning solvent can be solved.

According to the inventions of claims 7 and 8,
The productivity is improved and the working environment is greatly improved. In addition, since the cleaning process with an organic solvent is omitted, the general pollution problem can be solved and a reliable multi-chip module can be installed. It can be provided with high yield. In addition, when the solder is not used, problems such as obstacles to the human body through groundwater and the like and environmental pollution caused by not using the cleaning solvent can be solved. In addition, by forming the conductor pads on the surface of the multi-layer wiring board by the thin film method, high density wiring is possible, so it is possible to easily cope with the increase in the number of pins of semiconductor elements, and it is possible to make compact by high density mounting. Contribute to realization.

[Brief description of drawings]

FIG. 1 is a sectional view showing a configuration example of a main part of a multi-chip module according to the present invention.

FIG. 2 is a cross-sectional view showing a configuration of a main part of a conventional multi-chip module.

[Explanation of symbols]

 1, 6 …… Ceramic-based green sheet multilayer wiring board 1a, 6a …… Conductor pad 1b, 6b …… Signal wiring pattern layer etc. 1c, 1c ′, 6c, 6c ′ …… Input / output pad 1d, 6d, 6d ′… … Ag solder 1e, 6e …… Input / output lead 2, 7 …… Semiconductor element 2a, 7a …… Semiconductor element electrode 2b, 7b …… Bump 3, 6f …… Seal ring pattern 4, 9 …… Metal cap 4a , 9a …… Opening edge of metal cap 5a, 5b …… Solder 8 …… Weld ring 10 …… Conductive paste layer

Claims (8)

[Claims] 1. An inorganic multi-layer wiring board, and a semiconductor element mounted face down on the surface of the multi-layer wiring board,
A multi-chip module comprising a metal cap that hermetically seals the semiconductor element and has an opening edge portion hermetically sealed to a multilayer wiring board surface, wherein the semiconductor element has bumps on an electrode surface, The bumps are electrically connected and mounted by press-fitting and fixing to the conductive paste layer installed on the conductor pad surface of the multilayer wiring board, and the metal cap is hermetically sealed by laser beam irradiation. A multi-chip module characterized in that 2. An inorganic multilayer wiring board, and a semiconductor element mounted face down on the surface of the multilayer wiring board.
A multi-chip module comprising a metal cap that hermetically seals the semiconductor element and has an opening edge portion hermetically sealed to a multilayer wiring board surface, wherein the semiconductor element has bumps on an electrode surface, The bumps are electrically connected and mounted by press-fitting and fixing to the conductive paste layer installed on the conductor pad surface of the multilayer wiring board, and the metal cap is hermetically sealed by the seam weld method. Multi-chip module characterized by 3. A step of providing a conductive paste layer on a conductor pad surface of a surface of an inorganic type multilayer wiring board having a required weld ring layer, and a bump provided on an electrode surface on the conductor pad surface of the multilayer wiring board. Positioning the semiconductor elements face down so as to correspond to each other; pressing the semiconductor elements against the surface of the multilayer wiring board to press-in and embed the bumps provided on the electrode surface in the conductive paste layer; A step of curing the conductive paste layer in a state of being press-fitted / embedded to electrically and mechanically connect, and aligning the opening edge of the metal cap with the weld ring layer on the surface of the multilayer wiring board, A method of manufacturing a multi-chip module, which comprises a step of hermetically sealing with a laser beam irradiation. 4. A step of providing a conductive paste layer on a conductor pad surface of a surface of an inorganic type multilayer wiring board having a required weld ring layer, and a bump provided on an electrode surface on the conductor pad surface of the multilayer wiring board. Positioning the semiconductor elements face down so as to correspond to each other; pressing the semiconductor elements against the surface of the multilayer wiring board to press-in and embed the bumps provided on the electrode surface in the conductive paste layer; Step of curing the conductive paste layer in a state of being press-fitted / embedded to electrically and mechanically connect, and aligning the opening edge of the metal cap with the weld ring layer of the multilayer wiring board, and forming a seam. A method of manufacturing a multi-chip module, comprising a step of hermetically sealing by a weld method. 5. A step of producing an inorganic multi-layer wiring board having a conductor pad for connection and a weld ring layer in a predetermined region of the uppermost layer by a co-firing or green sheet process, and a conductor pad of the multi-layer wiring board. A step of providing a conductive paste layer on the surface, a step of positioning the semiconductor element face down on the conductor pad surface of the multilayer wiring board by positioning and corresponding bumps provided on the electrode surface, and Step of press-fitting / embedding the bumps provided on the electrode surface on the surface of the wiring board into the conductive paste layer, and curing the conductive paste layer with the bumps being pressed-in / embedded to electrically and mechanically connect And a step of aligning the opening edge of the metal cap with the weld ring layer of the multilayer wiring board and hermetically sealing by laser beam irradiation. Method of manufacturing a multi-chip module with and. 6. A step of producing an inorganic multi-layer wiring board having a conductor pad for connection and a weld ring layer in a predetermined region of the uppermost layer by a co-firing or green sheet process, and a conductor pad of the multi-layer wiring board. A step of providing a conductive paste layer on the surface, a step of positioning the semiconductor element face down on the conductor pad surface of the multilayer wiring board by positioning and corresponding bumps provided on the electrode surface, and Step of press-fitting / embedding the bumps provided on the electrode surface on the surface of the wiring board into the conductive paste layer, and curing the conductive paste layer with the bumps being pressed-in / embedded to electrically and mechanically connect And a step of aligning the opening edge of the metal cap with the weld ring layer of the multilayer wiring board and hermetically sealing by a seam weld method. Method of manufacturing a multi-chip module. 7. A manufacturing process of an inorganic multilayer wiring board having a weld ring layer for forming a top layer pattern including a conductor pad for connection by a thin film wiring process, and a conductive pad surface of the multilayer wiring board having conductivity. A step of providing a paste layer; a step of arranging semiconductor elements face down on the conductor pad surface of the multilayer wiring board surface by positioning and corresponding bumps provided on the electrode surface; Pressing and embedding the bumps provided on the electrode surface into the conductive paste layer, and curing the conductive paste layer with the bumps being pressed and embedded to electrically and mechanically connect the bumps. , A multi-wiring layer on the surface of the multi-layer wiring board, aligning an opening edge portion of a metal cap, and hermetically sealing by laser beam irradiation. Method for producing a flop module. 8. A method of manufacturing an inorganic multilayer wiring board having a weld ring layer for forming a top layer pattern including a conductor pad to be connected by a thin film wiring process, and a conductive pad surface of the multilayer wiring board having conductivity. A step of providing a paste layer; a step of arranging semiconductor elements face down on the conductor pad surface of the multilayer wiring board surface by positioning and corresponding bumps provided on the electrode surface; Pressing and embedding the bumps provided on the electrode surface into the conductive paste layer, and curing the conductive paste layer with the bumps being pressed and embedded to electrically and mechanically connect the bumps. A multi-chip with a step of aligning the opening edge of the metal cap with the weld ring layer on the surface of the multilayer wiring board and hermetically sealing by the seam weld method. Method of manufacturing the module.