JPH103618A - Yoke type magnetic head - Google Patents

Yoke type magnetic head

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Publication number
JPH103618A
JPH103618A JP15370896A JP15370896A JPH103618A JP H103618 A JPH103618 A JP H103618A JP 15370896 A JP15370896 A JP 15370896A JP 15370896 A JP15370896 A JP 15370896A JP H103618 A JPH103618 A JP H103618A
Authority
JP
Japan
Prior art keywords
film
yoke
giant magnetoresistive
thickness
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15370896A
Other languages
Japanese (ja)
Inventor
Matahiro Komuro
又洋 小室
Yoshio Suzuki
良夫 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15370896A priority Critical patent/JPH103618A/en
Publication of JPH103618A publication Critical patent/JPH103618A/en
Pending legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide a magnetic disk device having surface recording density of 5Gb/in<2> or above. SOLUTION: This head is constituted so that yoke films 2, 5 are shared for electrodes, and is provided with no big magneto-resistive effect film on a slide surface side, and is arranged on a position far from the slide surface by 0.5μm or above through the yoke films 2, 5. At this time, the element height of the big magneto-resistive effect film 1 is made 5μm or below, and the film thickness of the free layer of the big magneto-resistive effect film 1 is made 10nm or below, and spacing between the upper/lower yoke films 5, 2 is made 1μm or above and 10μm or below.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、いわゆる巨大磁気
抵抗効果膜を用いたヨーク型磁気ヘッドに係り、ヨーク
膜が電極を兼ね、記録密度5Gb/in2 以上用の再生
ヘッドに使用する高出力を有する磁気ヘッドに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a yoke type magnetic head using a so-called giant magnetoresistive effect film, wherein the yoke film also serves as an electrode, and has a high output used for a reproducing head for recording density of 5 Gb / in 2 or more. And a magnetic head having:

【0002】[0002]

【従来の技術】摺動面に対して垂直方向に電流を流す磁
気抵抗効果型磁気ヘッドに関する発明(特開平6−25133
6 号公報)が報告されている。特開平6−251336 号公報
ではMR膜が摺動面側に露出しており、ヨークを兼ねて
いる。本発明のように電流は摺動面に対して垂直に流す
が、本発明では摺動面に出力源に等しい構成の膜を使用
しておらず、出力源には巨大磁気抵抗効果膜を、ヨーク
膜にはNiFe系の巨大磁気抵抗効果を示さない多層膜
を用いる。また、特開平6−251336 号公報にはバイアス
導体を設けているが、本発明ではバイアス導体を用いて
いない。これらの従来発明には感磁部両端に接触したヨ
ーク膜のギャップすなわちヨーク膜に挟まれた巨大磁気
抵抗効果膜の素子高さやヨーク膜の厚さ,巨大磁気抵抗
効果膜の自由層の膜厚,上下ヨーク膜の間の間隔や摺動
面側のギャップの最適な長さに関する制限がない。
2. Description of the Related Art An invention relating to a magnetoresistive magnetic head in which a current flows in a direction perpendicular to a sliding surface (JP-A-6-25133)
No. 6) has been reported. In JP-A-6-251336, the MR film is exposed on the sliding surface side and also serves as a yoke. Although the current flows perpendicular to the sliding surface as in the present invention, the present invention does not use a film having the same structure as the output source on the sliding surface, and a giant magnetoresistive film is used as the output source. As the yoke film, an NiFe-based multilayer film that does not exhibit a giant magnetoresistance effect is used. Further, although a bias conductor is provided in JP-A-6-251336, the bias conductor is not used in the present invention. In these conventional inventions, the gap of the yoke film in contact with both ends of the magnetic sensing portion, that is, the element height of the giant magnetoresistive film sandwiched between the yoke films, the thickness of the yoke film, and the thickness of the free layer of the giant magnetoresistive effect film There is no restriction on the distance between the upper and lower yoke films and the optimum length of the gap on the sliding surface side.

【0003】[0003]

【発明が解決しようとする課題】本発明は記録密度5G
b/in2 以上用の再生ヘッドに使用する高出力を有す
る磁気ヘッドを提供するために、感磁部となる巨大磁気
抵抗効果膜の自由層の膜厚,巨大磁気抵抗効果膜の素子
高さ,ヨーク膜の膜厚,摺動面側の上下ヨーク膜間のギ
ャップ,上下ヨーク膜の間のスペーシング,バックコン
タクトにおける高比抵抗高透磁率材料の膜厚,巨大磁気
抵抗効果膜の位置を規定したものである。
SUMMARY OF THE INVENTION The present invention has a recording density of 5G.
In order to provide a magnetic head having a high output used for a read head for b / in 2 or more, the thickness of the free layer of the giant magnetoresistive film serving as the magnetic sensing portion and the element height of the giant magnetoresistive film , The thickness of the yoke film, the gap between the upper and lower yoke films on the sliding surface side, the spacing between the upper and lower yoke films, the thickness of the high resistivity and high permeability material at the back contact, and the position of the giant magnetoresistive film. It is specified.

【0004】[0004]

【課題を解決するための手段】本発明は記録密度5Gb
/in2 以上用の再生ヘッドに使用する高出力を有する
磁気ヘッドを提供するために、ヨーク型磁気ヘッドの形
状を規定したものである。図1に本発明で検討したヨー
ク型磁気ヘッドを摺動面と垂直な面から見た感磁部付近
の構成を示す。感磁部となる巨大磁気抵抗効果膜1,巨
大磁気抵抗効果膜1と電気的に接触した下部ヨーク膜2
から巨大磁気抵抗効果膜1に電流が供給され、電流は電
極膜3から巨大磁気抵抗効果膜1,摺動面側のギャップ
膜4を通り、上部ヨーク膜5へと流れる。摺動面と反対
側のバックコンタクトの上下ヨーク膜の間には強磁性ギ
ャップ膜6が用いられる。上下ヨーク膜の間の巨大磁気
抵抗効果膜の上は絶縁膜7である。このような構成の再
生ヘッドを5Gb/in2の面記録密度に使用するため
には、ヘッドを構成する膜の膜厚や配置を規定する必要
がある。
The present invention provides a recording density of 5 Gb.
In order to provide a magnetic head having a high output used for a read head for / in 2 or more, the shape of a yoke type magnetic head is specified. FIG. 1 shows the configuration near the magnetic sensing portion of the yoke type magnetic head studied in the present invention as viewed from a plane perpendicular to the sliding surface. Giant magnetoresistive film 1 serving as a magnetic sensing part, lower yoke film 2 electrically contacting giant magnetoresistive effect film 1
Supplies a current to the giant magnetoresistive film 1, and the current flows from the electrode film 3 to the upper yoke film 5 through the giant magnetoresistive film 1 and the gap film 4 on the sliding surface side. A ferromagnetic gap film 6 is used between the upper and lower yoke films of the back contact opposite to the sliding surface. On the giant magnetoresistive film between the upper and lower yoke films is an insulating film 7. In order to use the reproducing head having such a configuration at a surface recording density of 5 Gb / in 2 , it is necessary to regulate the thickness and arrangement of the films constituting the head.

【0005】5Gb/in2 の面記録密度ではトラック
幅が2μm以下,上下ヨーク膜のギャップが0.2μm
以下となる。この条件で高感度化するための必要条件に
関して検討した結果次のような条件を満たす必要がある
ことが判明した。すなわち、ヨーク膜が電極を兼ね、摺
動面側には巨大磁気抵抗効果膜がなく、ヨーク膜を介し
て摺動面から0.5μm 以上離れた位置に配置され、巨
大磁気抵抗効果膜の素子高さが5μm以下であり、巨大
磁気抵抗効果膜の自由層の膜厚が10nm以上であり、
巨大磁気抵抗効果膜端部の上下ヨーク膜のスペーシング
を1μm以上,10μm以下としバックコンタクトの磁
性膜が比抵抗1000μΩcm以上の絶縁性強磁性膜から
なり、ヨーク膜の膜厚が0.1μm 以上であることが必
要である。
At a surface recording density of 5 Gb / in 2 , the track width is 2 μm or less, and the gap between the upper and lower yoke films is 0.2 μm.
It is as follows. As a result of examining the necessary conditions for increasing the sensitivity under these conditions, it was found that the following conditions had to be satisfied. That is, the yoke film also serves as an electrode, and there is no giant magnetoresistive effect film on the sliding surface side. The yoke film is disposed at a distance of 0.5 μm or more from the sliding surface via the yoke film. The height is 5 μm or less, the thickness of the free layer of the giant magnetoresistive film is 10 nm or more,
The spacing between the upper and lower yoke films at the ends of the giant magnetoresistive film is 1 μm or more and 10 μm or less, and the magnetic film of the back contact is made of an insulating ferromagnetic film having a specific resistance of 1000 μΩcm or more, and the thickness of the yoke film is 0.1 μm or more. It is necessary to be.

【0006】5Gb/in2 の面記録密度ではトラック
幅が2μm以下,上下ヨーク膜のギャップが0.2μm
以下となる。この条件で高感度化するための必要条件に
関して検討した結果上述したような形状に関する制限が
導き出された。その理由について以下に述べる。最初に
巨大磁気抵抗効果膜の位置と素子高さの制限では、巨大
磁気抵抗効果膜が摺動面から離れれば感度が低下するが
摺動面側で上下ヨーク膜は非磁性導電膜を介して電気的
に接触しており、この非磁性導電膜の膜厚がギャップを
決めており、上下ヨーク膜が電気的に接触する非磁性導
電膜からバックコンタクト側に配置させる必要がある。
この時、巨大磁気抵抗効果膜の端部で上下ヨーク膜のス
ペーシングが長い方が下部ヨーク膜から上部ヨーク膜側
に漏洩する磁束が少ないため0.5μm 以上摺動面から
離れて巨大磁気抵抗効果膜の端部を配置させる。また、
巨大磁気抵抗効果膜の位置が摺動面から離れ過ぎると出
力が低下するので、摺動面から0.5μm 以上,上下ヨ
ーク膜のスペーシング以下にすることが望ましい。巨大
磁気抵抗効果膜に付加される磁界は巨大磁気抵抗効果膜
の両端で電気的に接触したヨーク膜を通して付加され
る。上下ヨーク膜と巨大磁気抵抗効果膜のの磁気回路を
考えると、最も抵抗が高い部分は巨大磁気抵抗効果膜が
ある部分である。すなわち、巨大磁気抵抗効果膜の素子
高さを長くすると、この部分での磁束が減少し、出力が
低下する。また、巨大磁気抵抗効果膜の中の自由層の膜
厚が厚くなると下部ヨーク膜の巨大磁気抵抗効果膜の感
度が低下するので同様に出力が低下する。このため巨大
磁気抵抗効果膜の自由層の膜厚は5nm以上,巨大磁気
抵抗効果膜の素子高さを5μm以下にする必要がある。
また上下ヨーク膜間で磁束が漏洩するため、巨大磁気抵
抗効果膜端部の上下ヨーク膜のスペーシングを1μm以
上とし、ライトヘッドが作製しやすいように、10μm
以下とする。なお、バックコンタクトの磁性膜が比抵抗
1000μΩcm以上の絶縁性強磁性膜を用いることによ
り、電流が巨大磁気抵抗効果膜に流れるようにする。ま
た、ヨーク膜の膜厚が0.1μm 以上である。
At a surface recording density of 5 Gb / in 2 , the track width is 2 μm or less, and the gap between the upper and lower yoke films is 0.2 μm.
It is as follows. As a result of studying the necessary conditions for increasing the sensitivity under these conditions, the limitation on the shape as described above was derived. The reason is described below. First, in the limitation of the position of the giant magnetoresistive film and the height of the element, the sensitivity decreases if the giant magnetoresistive film moves away from the sliding surface, but the upper and lower yoke films on the sliding surface side are interposed through the non-magnetic conductive film. The non-magnetic conductive film is in electrical contact, and the thickness of the non-magnetic conductive film determines the gap. The upper and lower yoke films need to be arranged on the back contact side from the non-magnetic conductive film in electrical contact.
At this time, the longer the spacing of the upper and lower yoke films at the end of the giant magnetoresistive film, the smaller the magnetic flux leaking from the lower yoke film to the upper yoke film side. The end of the effect film is arranged. Also,
If the position of the giant magnetoresistive film is too far from the sliding surface, the output will decrease. Therefore, it is desirable that the distance is 0.5 μm or more from the sliding surface and less than or equal to the spacing of the upper and lower yoke films. The magnetic field applied to the giant magnetoresistive film is applied through the yoke films which are in electrical contact at both ends of the giant magnetoresistive film. Considering the magnetic circuit of the upper and lower yoke films and the giant magnetoresistive film, the portion having the highest resistance is the portion where the giant magnetoresistive film is located. That is, when the element height of the giant magnetoresistive film is increased, the magnetic flux in this portion decreases, and the output decreases. Also, when the thickness of the free layer in the giant magnetoresistive film is increased, the output of the giant magnetoresistive film in the lower yoke film is similarly reduced because the sensitivity of the giant magnetoresistive film is reduced. Therefore, the free layer of the giant magnetoresistive film needs to have a thickness of 5 nm or more, and the element height of the giant magnetoresistive film needs to be 5 μm or less.
Also, since magnetic flux leaks between the upper and lower yoke films, the spacing of the upper and lower yoke films at the ends of the giant magnetoresistive film is set to 1 μm or more, so that the write head can be easily manufactured.
The following is assumed. The current flows through the giant magnetoresistive film by using an insulating ferromagnetic film having a specific resistance of 1000 μΩcm or more as the magnetic film of the back contact. The yoke film has a thickness of 0.1 μm or more.

【0007】[0007]

【発明の実施の形態】本発明は記録密度5Gb/in2
以上用の再生ヘッドに使用する高出力を有する磁気ヘッ
ドを提供するために、ヨーク型磁気ヘッドの形状を規定
したものであり、図1に本発明で検討したヨーク型磁気
ヘッドを摺動面と垂直な面から見た感磁部付近の構成を
示す。感磁部となる巨大磁気抵抗効果膜1は反強磁性
膜,強磁性膜,非磁性導電膜および強磁性膜からなる。
前者の強磁性膜は反強磁性膜と接しており、反強磁性膜
との界面の交換結合により、強磁性膜の磁化は一方向に
固定されている。この強磁性膜を固定層と呼ぶ。また反
強磁性膜とは界面をもたない強磁性膜は外部磁界(媒体
磁界)によりその磁化が回転する。この強磁性膜を自由
層と呼ぶ。反強磁性膜はCrMn系,CoMn系,Fe
Mn系あるいはNiMn系合金膜かこれらの合金に貴金
属元素を添加した3元系合金である。非磁性導電膜はC
u,Au,Ag等からなる膜である。また固定層や自由
層の強磁性膜はNiFe合金あるいはCoNiFe合
金,Co、あるいはFe等である。あるいはこの巨大磁
気抵抗効果膜1は導電性膜のない反強磁性膜と強磁性膜
の2層からなり、反強磁性膜の磁化と強磁性膜の磁化の
方向に依存した磁気抵抗を発生させることも可能であ
る。巨大磁気抵抗効果膜1に電流を流すためには巨大磁
気抵抗効果膜1と電気的に接触した下部ヨーク膜2があ
り、媒体からの磁界はヨーク膜を磁路として巨大磁気抵
抗効果膜1に達する。ヨーク膜の材料はNiFe合金,
CoNiFe合金,NiFeやCoNiFeと非磁性導
電膜との多層膜,NiFeやCoNiFeと絶縁膜との
多層膜がある。巨大磁気抵抗効果膜1に電流が供給さ
れ、電流は電極膜3から巨大磁気抵抗効果膜1,摺動面
側のギャップ膜4を通り、上部ヨーク膜5へと流れる。
摺動面と反対側のバックコンタクトの上下ヨーク膜の間
には強磁性ギャップ膜6が用いられる。ギャップ膜4は
導電性膜であり、摺動面側であるため耐摩耗性のある析
出硬化型合金や酸化物との複合材料を用いる。上部ヨー
ク膜5には下部ヨーク膜2と同種の材料を用いる。な
お、ヨーク膜を磁区制御するためにヨーク膜に反強磁性
膜を接触させるかあるいは電流バイアスを加える方法も
ある。上下ヨーク膜の間の巨大磁気抵抗効果膜の上には
絶縁膜7があり、巨大磁気抵抗効果膜1はレジストや酸
化物等の絶縁保護膜で保護されている。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention has a recording density of 5 Gb / in 2.
In order to provide a magnetic head having a high output used for the reproducing head for the above, the shape of the yoke type magnetic head is specified. FIG. 1 shows the yoke type magnetic head studied in the present invention as a sliding surface. The configuration near the magnetic sensing part viewed from a vertical plane is shown. The giant magnetoresistive film 1 serving as a magnetic sensing portion is composed of an antiferromagnetic film, a ferromagnetic film, a nonmagnetic conductive film, and a ferromagnetic film.
The former ferromagnetic film is in contact with the antiferromagnetic film, and the magnetization of the ferromagnetic film is fixed in one direction by exchange coupling at the interface with the antiferromagnetic film. This ferromagnetic film is called a fixed layer. Further, the magnetization of a ferromagnetic film having no interface with the antiferromagnetic film is rotated by an external magnetic field (medium magnetic field). This ferromagnetic film is called a free layer. The antiferromagnetic film is made of CrMn, CoMn, Fe
It is a Mn-based or NiMn-based alloy film or a ternary alloy obtained by adding a noble metal element to these alloys. Nonmagnetic conductive film is C
It is a film made of u, Au, Ag, or the like. The ferromagnetic films of the fixed layer and the free layer are made of NiFe alloy, CoNiFe alloy, Co, Fe, or the like. Alternatively, the giant magnetoresistive film 1 is composed of two layers of an antiferromagnetic film and a ferromagnetic film without a conductive film, and generates a magnetoresistance depending on the magnetization of the antiferromagnetic film and the direction of the magnetization of the ferromagnetic film. It is also possible. In order to allow a current to flow through the giant magnetoresistive film 1, there is a lower yoke film 2 that is in electrical contact with the giant magnetoresistive film 1, and a magnetic field from the medium is applied to the giant magnetoresistive film 1 using the yoke film as a magnetic path. Reach. The material of the yoke film is NiFe alloy,
There are a CoNiFe alloy, a multilayer film of NiFe or CoNiFe and a nonmagnetic conductive film, and a multilayer film of NiFe or CoNiFe and an insulating film. A current is supplied to the giant magnetoresistive film 1, and the current flows from the electrode film 3 to the upper yoke film 5 through the giant magnetoresistive film 1 and the gap film 4 on the sliding surface side.
A ferromagnetic gap film 6 is used between the upper and lower yoke films of the back contact opposite to the sliding surface. Since the gap film 4 is a conductive film and is on the sliding surface side, a composite material with a wear-resistant precipitation hardening alloy or oxide is used. The same material as the lower yoke film 2 is used for the upper yoke film 5. In order to control the magnetic domain of the yoke film, there is a method of bringing an antiferromagnetic film into contact with the yoke film or applying a current bias. An insulating film 7 is provided on the giant magnetoresistive film between the upper and lower yoke films, and the giant magnetoresistive film 1 is protected by an insulating protective film such as a resist or an oxide.

【0008】次に磁気ヘッドの作製過程について説明す
る。基板はAl23やSiO2 ,Si(多結晶及び単結
晶)、及び複合酸化物等の材料で構成されている。これ
らの基板表面は凹凸が5nm以下にしてある。この凹凸
が大きくなると巨大磁気抵抗効果膜の特性が劣化する恐
れがあるため、研磨,逆スパッタ,イオンビームスパッ
タ,エッチングにより表面凹凸を5nm以下にし、凹凸
の周期も5nm以下にして巨大磁気抵抗効果膜1の特性
が劣化しないようにした。このような表面の基板上に巨
大磁気抵抗効果膜を作製するが、下地としては10nm
以下の膜厚のTa,W,Ti,Zrの中のすくなくとも
一種類の元素を含む膜が用いられる。この下地膜の上に
巨大磁気抵抗効果膜1をスパッタリング法,真空蒸着
法,イオンビームスパッタ法により作製する。本実施例
では巨大磁気抵抗効果膜の中の自由層の膜厚を3nmか
ら20nmまで変えて作製した。上下ヨーク膜のスペー
シング、すなわち、絶縁膜7の平坦部における厚さを3
μmとして巨大磁気抵抗効果膜1の高さ(下部ヨーク膜
の巨大磁気抵抗効果膜1付近のギャップ長をさしてい
る)を1μmとするとこの再生ヘッドの相対出力(Outp
ut)は図3に示すように0.95となる。5Gb/in2
を達成するための必要感度は出力は約0.7 である。従
って自由層の膜厚は10nm以下にする必要がある。固
定層の膜厚は1nmから10nmであり、非磁性導電膜
の膜厚は1〜3nm,反強磁性膜の膜厚は10〜30n
mである。この巨大磁気抵抗効果膜1の形成後、ミリン
グにより加工し、その上にヨーク膜2を蒸着やスパッタ
法で作製する。ヨーク膜の膜厚は0.1〜1μm であ
る。ヨーク膜2はリフトオフ法によって作製できる。次
にCu等の導電成膜を形成して電極膜3とする。また摺
動面側に、ギャップ膜を形成する。ギャップ膜4もスパ
ッタリング法や真空蒸着法によって形成できる。ギャッ
プ膜の膜厚は0.2μm 以下である。出力の巨大磁気抵
抗効果膜1の高さ(素子高さ)依存性を図2に示す。ヘ
ッド出力は素子高さ5μm以下であれば0.7以上とな
り、5Gb/in2の出力を達成できる。次にレジスト
を用いて絶縁膜7を形成する。絶縁膜7の膜厚を変える
と出力も図4に示すように、絶縁膜の膜厚(スペーシン
グ)の増加とともに、出力も増加する。ライトヘッドと
の位置あわせを考慮するとスペーシングは小さく(10
μm以下に)する必要がある。また、スペーシングを増
加させた方図4のように出力が増加するため、1μm以
上にする。従って、スペーシングは1〜10μmとな
る。下部ヨーク膜2と上部ヨーク膜5のバックコンタク
ト部分にはその間に1000μΩcm以上の比抵抗を有す
る絶縁膜や強磁性絶縁膜7を用いる。
Next, a process of manufacturing the magnetic head will be described. The substrate is made of a material such as Al 2 O 3 , SiO 2 , Si (polycrystal and single crystal), and a composite oxide. The surface of these substrates has irregularities of 5 nm or less. If the irregularities increase, the properties of the giant magnetoresistive film may deteriorate. Therefore, the surface irregularities are reduced to 5 nm or less by polishing, reverse sputtering, ion beam sputtering, and etching, and the period of the irregularities is reduced to 5 nm or less. The characteristics of the film 1 were not deteriorated. A giant magnetoresistive film is formed on a substrate having such a surface, and a 10 nm
A film containing at least one element of Ta, W, Ti, and Zr having the following film thickness is used. A giant magnetoresistive film 1 is formed on the underlayer by sputtering, vacuum evaporation, or ion beam sputtering. In this embodiment, the free layer in the giant magnetoresistive film was formed by changing the thickness from 3 nm to 20 nm. The spacing of the upper and lower yoke films, that is, the thickness of the insulating film 7 at the flat portion is set to 3
Assuming that the height of the giant magnetoresistive film 1 (the gap length near the giant magnetoresistive film 1 in the lower yoke film) is 1 μm, the relative output (Outp
ut) is 0.95 as shown in FIG. 5Gb / in 2
The required sensitivity to achieve is an output of about 0.7. Therefore, the thickness of the free layer needs to be 10 nm or less. The thickness of the fixed layer is 1 nm to 10 nm, the thickness of the nonmagnetic conductive film is 1 to 3 nm, and the thickness of the antiferromagnetic film is 10 to 30 n.
m. After the formation of the giant magnetoresistive film 1, it is processed by milling, and a yoke film 2 is formed thereon by vapor deposition or sputtering. The thickness of the yoke film is 0.1 to 1 μm. The yoke film 2 can be manufactured by a lift-off method. Next, an electrode film 3 is formed by forming a conductive film of Cu or the like. A gap film is formed on the sliding surface side. The gap film 4 can also be formed by a sputtering method or a vacuum evaporation method. The thickness of the gap film is 0.2 μm or less. FIG. 2 shows the dependence of the output on the height (element height) of the giant magnetoresistive film 1. The head output becomes 0.7 or more if the element height is 5 μm or less, and an output of 5 Gb / in 2 can be achieved. Next, an insulating film 7 is formed using a resist. When the film thickness of the insulating film 7 is changed, the output also increases as the film thickness (spacing) of the insulating film increases, as shown in FIG. Considering the alignment with the write head, the spacing is small (10
μm or less). Also, the output is increased as shown in FIG. 4 where the spacing is increased. Therefore, the spacing is 1 to 10 μm. For the back contact portion between the lower yoke film 2 and the upper yoke film 5, an insulating film or a ferromagnetic insulating film 7 having a specific resistance of 1000 μΩcm or more is used between them.

【0009】以上の結果から、5Gb/in2 の面記録
密度ではトラック幅が2μm以下,上下ヨーク膜のギャ
ップが0.2μm 以下となる。この条件で高感度化する
ための必要条件に関して検討した結果次のような条件を
満たす必要があることが判明した。すなわち、ヨーク膜
が電極を兼ね、摺動面側には巨大磁気抵抗効果膜がな
く、ヨーク膜を介して摺動面から0.5μm 以上離れた
位置に配置され、巨大磁気抵抗効果膜の素子高さが5μ
m以下であり、巨大磁気抵抗効果膜の自由層の膜厚が1
0nm以上であり、巨大磁気抵抗効果膜端部の上下ヨー
ク膜のスペーシングを1μm以上,10μm以下としバ
ックコンタクトの磁性膜が比抵抗1000μΩcm以上の
絶縁性強磁性膜からなり、ヨーク膜の膜厚が0.1μm
以上であることが必要である。
From the above results, at a surface recording density of 5 Gb / in 2 , the track width is 2 μm or less and the gap between the upper and lower yoke films is 0.2 μm or less. As a result of examining the necessary conditions for increasing the sensitivity under these conditions, it was found that the following conditions had to be satisfied. That is, the yoke film also serves as an electrode, and there is no giant magnetoresistive effect film on the sliding surface side. The yoke film is disposed at a distance of 0.5 μm or more from the sliding surface via the yoke film. Height 5μ
m and the thickness of the free layer of the giant magnetoresistance effect film is 1
0 nm or more, the spacing of the upper and lower yoke films at the ends of the giant magnetoresistive film is 1 μm or more and 10 μm or less, and the magnetic film of the back contact is made of an insulating ferromagnetic film having a specific resistance of 1000 μΩcm or more. Is 0.1 μm
It is necessary to be above.

【0010】[0010]

【発明の効果】本発明はヨーク膜が電極を兼ね、摺動面
側には巨大磁気抵抗効果膜がなく、ヨーク膜を介して摺
動面から0.5μm 以上離れた位置に配置され、巨大磁
気抵抗効果膜の素子高さが5μm以下であり、巨大磁気
抵抗効果膜の自由層の膜厚が10nm以下であり、上下
ヨーク膜のスペーシングを1μm以上,10μm以下の
ヨーク型磁気ヘッドは5Gb/in2 以上の面記録密度
を有する磁気ディスク装置に使用できる。
According to the present invention, the yoke film also serves as an electrode, there is no giant magnetoresistive film on the sliding surface side, and the yoke film is disposed at a distance of 0.5 μm or more from the sliding surface via the yoke film. A yoke type magnetic head in which the element height of the magnetoresistive film is 5 μm or less, the thickness of the free layer of the giant magnetoresistive film is 10 nm or less, and the spacing of the upper and lower yoke films is 1 μm or more and 10 μm or less is 5 Gb. It can be used for a magnetic disk drive having a surface recording density of / in 2 or more.

【図面の簡単な説明】[Brief description of the drawings]

【図1】ヨーク構造のヘッドの断面図。FIG. 1 is a sectional view of a head having a yoke structure.

【図2】出力(Output)の素子高さ依存性の特性図。FIG. 2 is a characteristic diagram of an element height dependency of an output.

【図3】出力の自由層膜厚依存性の特性図。FIG. 3 is a characteristic diagram of output dependence on free layer thickness.

【図4】出力のスペーシング依存性の特性図。FIG. 4 is a characteristic diagram of output dependence on spacing.

【符号の説明】[Explanation of symbols]

1…巨大磁気抵抗効果膜、2…下部ヨーク膜、3…電
極、4…ギャップ膜、5…上部ヨーク膜、6…高比抵抗
膜、7…絶縁膜。
DESCRIPTION OF SYMBOLS 1 ... Giant magnetoresistive effect film, 2 ... Lower yoke film, 3 ... Electrode, 4 ... Gap film, 5 ... Upper yoke film, 6 ... High resistivity film, 7 ... Insulating film.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】ヨーク膜が電極を兼ね、摺動面側には巨大
磁気抵抗効果膜がなく、上記ヨーク膜を介して摺動面か
ら0.5μm 以上離れた位置に配置され、巨大磁気抵抗
効果膜の素子高さが5μm以下であり、上記巨大磁気抵
抗効果膜の自由層の膜厚が10nm以下であり、上下ヨ
ーク膜のスペーシングを1μm以上,10μm以下とす
ることを特徴とするヨーク型磁気ヘッド。
A yoke film also serves as an electrode, and there is no giant magnetoresistive effect film on the sliding surface side. The yoke film is disposed at a distance of 0.5 μm or more from the sliding surface via the yoke film, The element height of the effect film is 5 μm or less, the thickness of the free layer of the giant magnetoresistive film is 10 nm or less, and the spacing of the upper and lower yoke films is 1 μm or more and 10 μm or less. Type magnetic head.
【請求項2】ヨーク膜が電極を兼ね、摺動面側には巨大
磁気抵抗効果膜がなく、上記ヨーク膜を介して摺動面か
ら0.5μm 以上離れた位置に配置され、巨大磁気抵抗
効果膜の素子高さが5μm以下であり、上記巨大磁気抵
抗効果膜の自由層の膜厚が10nm以上であり、上下ヨ
ーク膜のスペーシングが1μm以上,10μm以下であ
り、摺動面側の上記上下ヨーク膜間のギャップ膜が膜厚
0.2μm 以下の導電性膜であり、バックコンタクトの
膜が比抵抗1000μΩcm以上の絶縁性磁性膜からなる
ことを特徴とするヨーク型磁気ヘッド。
The yoke film also serves as an electrode, and there is no giant magnetoresistive film on the sliding surface side. The yoke film is disposed at a distance of 0.5 μm or more from the sliding surface via the yoke film. The element height of the effect film is 5 μm or less, the thickness of the free layer of the giant magnetoresistive film is 10 nm or more, the spacing of the upper and lower yoke films is 1 μm or more and 10 μm or less. A yoke type magnetic head, wherein the gap film between the upper and lower yoke films is a conductive film having a thickness of 0.2 μm or less, and the back contact film is formed of an insulating magnetic film having a specific resistance of 1000 μΩcm or more.
【請求項3】請求項1または2において、上記ヨーク膜
の膜厚が0.1μm 以上であるヨーク型磁気ヘッド。
3. A yoke type magnetic head according to claim 1, wherein said yoke film has a thickness of 0.1 μm or more.
JP15370896A 1996-06-14 1996-06-14 Yoke type magnetic head Pending JPH103618A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15370896A JPH103618A (en) 1996-06-14 1996-06-14 Yoke type magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15370896A JPH103618A (en) 1996-06-14 1996-06-14 Yoke type magnetic head

Publications (1)

Publication Number Publication Date
JPH103618A true JPH103618A (en) 1998-01-06

Family

ID=15568371

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15370896A Pending JPH103618A (en) 1996-06-14 1996-06-14 Yoke type magnetic head

Country Status (1)

Country Link
JP (1) JPH103618A (en)

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