JPS5375862A - Surface stabilization method of semiconductor - Google Patents

Surface stabilization method of semiconductor

Info

Publication number
JPS5375862A
JPS5375862A JP15168776A JP15168776A JPS5375862A JP S5375862 A JPS5375862 A JP S5375862A JP 15168776 A JP15168776 A JP 15168776A JP 15168776 A JP15168776 A JP 15168776A JP S5375862 A JPS5375862 A JP S5375862A
Authority
JP
Japan
Prior art keywords
semiconductor
stabilization method
surface stabilization
sio
wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15168776A
Other languages
Japanese (ja)
Inventor
Takeshige Ichimura
Akihiko Kitamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP15168776A priority Critical patent/JPS5375862A/en
Publication of JPS5375862A publication Critical patent/JPS5375862A/en
Pending legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To reduce the fast surface level of Si-SiO2 interface and stabilize surface characteristics by subjecting the wafers of Si-SiO2 structure having completed high temperature treatment such as diffusion to heat treatment at a temperature of 500 to 1000°C within a carrier gas such as N2, O2, Ar having a moisture concentration of 50 to 200 ppm.
COPYRIGHT: (C)1978,JPO&Japio
JP15168776A 1976-12-17 1976-12-17 Surface stabilization method of semiconductor Pending JPS5375862A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15168776A JPS5375862A (en) 1976-12-17 1976-12-17 Surface stabilization method of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15168776A JPS5375862A (en) 1976-12-17 1976-12-17 Surface stabilization method of semiconductor

Publications (1)

Publication Number Publication Date
JPS5375862A true JPS5375862A (en) 1978-07-05

Family

ID=15524054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15168776A Pending JPS5375862A (en) 1976-12-17 1976-12-17 Surface stabilization method of semiconductor

Country Status (1)

Country Link
JP (1) JPS5375862A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4946543A (en) * 1986-06-02 1990-08-07 Kalisher Murray H Method and apparatus for growing films on a substrate
US4952523A (en) * 1985-06-21 1990-08-28 Texas Instruments Incorporated Process for fabricating charge-coupled device with reduced surface state at semiconductor-insulator interface

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4952523A (en) * 1985-06-21 1990-08-28 Texas Instruments Incorporated Process for fabricating charge-coupled device with reduced surface state at semiconductor-insulator interface
US4946543A (en) * 1986-06-02 1990-08-07 Kalisher Murray H Method and apparatus for growing films on a substrate

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