JPS538072A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS538072A
JPS538072A JP8148776A JP8148776A JPS538072A JP S538072 A JPS538072 A JP S538072A JP 8148776 A JP8148776 A JP 8148776A JP 8148776 A JP8148776 A JP 8148776A JP S538072 A JPS538072 A JP S538072A
Authority
JP
Japan
Prior art keywords
semiconductor device
mosfets
stabilizer
limiting
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8148776A
Other languages
Japanese (ja)
Inventor
Kenji Natori
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8148776A priority Critical patent/JPS538072A/en
Publication of JPS538072A publication Critical patent/JPS538072A/en
Priority to US05/955,879 priority patent/US4243997A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/025—Manufacture or treatment forming recessed gates, e.g. by using local oxidation

Landscapes

  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE: To reduce the Size of MOSFETs and stabilizer their characteristics by forming channel portions by limiting only on the bottom part of the grooves provided to a semiconductor substrate.
COPYRIGHT: (C)1978,JPO&Japio
JP8148776A 1976-03-25 1976-07-10 Semiconductor device Pending JPS538072A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8148776A JPS538072A (en) 1976-07-10 1976-07-10 Semiconductor device
US05/955,879 US4243997A (en) 1976-03-25 1978-10-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8148776A JPS538072A (en) 1976-07-10 1976-07-10 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS538072A true JPS538072A (en) 1978-01-25

Family

ID=13747751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8148776A Pending JPS538072A (en) 1976-03-25 1976-07-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS538072A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56144581A (en) * 1980-04-11 1981-11-10 Sanyo Electric Co Ltd Production of metal oxide semiconductor type transistor
US5049512A (en) * 1987-09-28 1991-09-17 Nissan Motor Co., Ltd. Method of forming a MOS field-effect transistor
JPH06246526A (en) * 1993-02-18 1994-09-06 Oobari Tekunika:Kk Shearing device
US6528847B2 (en) * 1998-06-29 2003-03-04 Advanced Micro Devices, Inc. Metal oxide semiconductor device having contoured channel region and elevated source and drain regions

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56144581A (en) * 1980-04-11 1981-11-10 Sanyo Electric Co Ltd Production of metal oxide semiconductor type transistor
US5049512A (en) * 1987-09-28 1991-09-17 Nissan Motor Co., Ltd. Method of forming a MOS field-effect transistor
JPH06246526A (en) * 1993-02-18 1994-09-06 Oobari Tekunika:Kk Shearing device
US6528847B2 (en) * 1998-06-29 2003-03-04 Advanced Micro Devices, Inc. Metal oxide semiconductor device having contoured channel region and elevated source and drain regions

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