JPS5390773A - Silcon semiconductor device on sapphire - Google Patents
Silcon semiconductor device on sapphireInfo
- Publication number
- JPS5390773A JPS5390773A JP487277A JP487277A JPS5390773A JP S5390773 A JPS5390773 A JP S5390773A JP 487277 A JP487277 A JP 487277A JP 487277 A JP487277 A JP 487277A JP S5390773 A JPS5390773 A JP S5390773A
- Authority
- JP
- Japan
- Prior art keywords
- sapphire
- silcon
- semiconductor device
- sosmos
- isolating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To improve mobility by designing the channel direction on a(111) Si layer in the [1-100] direction of sapphire faces and isolating between elements with a thermal oxide film in a SOSMOS element.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP487277A JPS5837993B2 (en) | 1977-01-21 | 1977-01-21 | Silicon-on-sapphire semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP487277A JPS5837993B2 (en) | 1977-01-21 | 1977-01-21 | Silicon-on-sapphire semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5390773A true JPS5390773A (en) | 1978-08-09 |
JPS5837993B2 JPS5837993B2 (en) | 1983-08-19 |
Family
ID=11595752
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP487277A Expired JPS5837993B2 (en) | 1977-01-21 | 1977-01-21 | Silicon-on-sapphire semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5837993B2 (en) |
-
1977
- 1977-01-21 JP JP487277A patent/JPS5837993B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5837993B2 (en) | 1983-08-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5338278A (en) | Semiconductor device | |
JPS5365066A (en) | Semiconductor device | |
JPS53135263A (en) | Production of semiconductor device | |
JPS5390773A (en) | Silcon semiconductor device on sapphire | |
JPS533075A (en) | Production of mos structure field effect semiconductor device | |
JPS5327371A (en) | Sos semiconductor device | |
JPS536579A (en) | Semiconductor device | |
JPS5376769A (en) | Simiconductor device | |
JPS5220769A (en) | Longitudinal semi-conductor unit | |
JPS5346288A (en) | Mis type semiconductor device | |
JPS5364480A (en) | Field effect semiconductor device | |
JPS53135581A (en) | Manufacture for mos semiconductor device | |
JPS52144980A (en) | Sos semiconductor device | |
JPS5368180A (en) | Semiconductor device | |
JPS53149770A (en) | Semiconductor device | |
JPS52123879A (en) | Mos type semiconductor device and its production | |
JPS5384575A (en) | Semicocductor device | |
JPS5389375A (en) | Production of semiconductor device | |
JPS5429587A (en) | Semiconductor device | |
JPS53108385A (en) | Manufacture for semiconductor device | |
JPS5421283A (en) | Manufacture for semiconductor device | |
JPS5410688A (en) | Production of semiconductor device | |
JPS5421182A (en) | Manufacture for semiconductor device | |
JPS52115667A (en) | Semiconductor device | |
JPS52109882A (en) | Manufacture for semiconductor device |