JPS5468126A - Memory element - Google Patents

Memory element

Info

Publication number
JPS5468126A
JPS5468126A JP13526477A JP13526477A JPS5468126A JP S5468126 A JPS5468126 A JP S5468126A JP 13526477 A JP13526477 A JP 13526477A JP 13526477 A JP13526477 A JP 13526477A JP S5468126 A JPS5468126 A JP S5468126A
Authority
JP
Japan
Prior art keywords
film
power supply
type layer
cell
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13526477A
Other languages
Japanese (ja)
Inventor
Tsuneo Handa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP13526477A priority Critical patent/JPS5468126A/en
Publication of JPS5468126A publication Critical patent/JPS5468126A/en
Pending legal-status Critical Current

Links

Landscapes

  • Power Sources (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE: To keep the memory condition for volatile memories enabling to be written in even with the main power supply removed, by forming the power supply for memory storage in the process of IC manufacture in IC package or chip.
CONSTITUTION: PN junction is caused on the Si substrate 4 of IC chip by forming the N type layer 5 and the P type layer 6 in it, and the 63 Ni film 8 having pure base radiation performance is coated on it via the SiO2 film 7. Next, the P type layer of PN junction semiconductor separately formed is pushed on the Ni film 8 and the incorporated cell is constituted by attaching wiring to this, and package is formed by using ceramic. At this time, the part being the cell can be around 0.05mm2 per IC, the space is less, the size of IC is not great, and the damage due to radiant rays can be avoided through the use of 63Ni. With this constitutuion, this cell can keep the memory to non-volatility with the main power supply removed.
COPYRIGHT: (C)1979,JPO&Japio
JP13526477A 1977-11-11 1977-11-11 Memory element Pending JPS5468126A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13526477A JPS5468126A (en) 1977-11-11 1977-11-11 Memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13526477A JPS5468126A (en) 1977-11-11 1977-11-11 Memory element

Publications (1)

Publication Number Publication Date
JPS5468126A true JPS5468126A (en) 1979-06-01

Family

ID=15147628

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13526477A Pending JPS5468126A (en) 1977-11-11 1977-11-11 Memory element

Country Status (1)

Country Link
JP (1) JPS5468126A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5528535A (en) * 1978-08-17 1980-02-29 Nec Corp Memory device
JPS57109183A (en) * 1980-12-26 1982-07-07 Hitachi Ltd Non-volatile memory

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5528535A (en) * 1978-08-17 1980-02-29 Nec Corp Memory device
JPS57109183A (en) * 1980-12-26 1982-07-07 Hitachi Ltd Non-volatile memory
JPS5931570A (en) * 1980-12-26 1984-02-20 Hitachi Ltd Whole solid thin film lithium secondary battery
JPH0334662B2 (en) * 1980-12-26 1991-05-23 Hitachi Seisakusho Kk

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