JPS5720476A - Diode - Google Patents

Diode

Info

Publication number
JPS5720476A
JPS5720476A JP9534280A JP9534280A JPS5720476A JP S5720476 A JPS5720476 A JP S5720476A JP 9534280 A JP9534280 A JP 9534280A JP 9534280 A JP9534280 A JP 9534280A JP S5720476 A JPS5720476 A JP S5720476A
Authority
JP
Japan
Prior art keywords
layer
resistance
depletion
breakdown
internal resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9534280A
Other languages
Japanese (ja)
Inventor
Kunihiro Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9534280A priority Critical patent/JPS5720476A/en
Publication of JPS5720476A publication Critical patent/JPS5720476A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obtain a diode highly resistant to the surge voltage with a low internal resistance by causing breakdown of voltage before a depletion layer from one electrode reaches an ohmic connection layer of the other electrode. CONSTITUTION:An n<-> layer 3 is epitaxially formed on an n<-> type Si substrate 1 on which an buried layer is with an n<+> layer 9 in a p layer 2 and separated by a p layer 4 reaching the p layer 2. An n<+> layer 5 is formed facing an n<+> layer 9. Electrodes are each attached to the p layer 4 and the n<+> layer 5. With such an arrangement, breakdown occures before p-n junctions J1 and J2 in layer 9 and 4 reach the n<+> connection layer. At this point, current is inhibited by a resistance of an n<-> epitaxial layer between the spreading end of a depletion layer and the n<+> layer 5. Especially, a greater surge resistance can be obtained without larger thickness of the n<-> epitaxial layer 3 thereby reducing internal resistance between the positive and negative electrodes.
JP9534280A 1980-07-10 1980-07-10 Diode Pending JPS5720476A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9534280A JPS5720476A (en) 1980-07-10 1980-07-10 Diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9534280A JPS5720476A (en) 1980-07-10 1980-07-10 Diode

Publications (1)

Publication Number Publication Date
JPS5720476A true JPS5720476A (en) 1982-02-02

Family

ID=14135011

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9534280A Pending JPS5720476A (en) 1980-07-10 1980-07-10 Diode

Country Status (1)

Country Link
JP (1) JPS5720476A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6064481A (en) * 1983-09-19 1985-04-13 Hitachi Ltd Semiconductor device
US5055888A (en) * 1989-06-21 1991-10-08 Texas Instrumenets Incorporated Zener diodes in a linear semiconductor device
US5374843A (en) * 1991-05-06 1994-12-20 Silinconix, Inc. Lightly-doped drain MOSFET with improved breakdown characteristics

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6064481A (en) * 1983-09-19 1985-04-13 Hitachi Ltd Semiconductor device
JPH0516196B2 (en) * 1983-09-19 1993-03-03 Hitachi Ltd
US5055888A (en) * 1989-06-21 1991-10-08 Texas Instrumenets Incorporated Zener diodes in a linear semiconductor device
US5374843A (en) * 1991-05-06 1994-12-20 Silinconix, Inc. Lightly-doped drain MOSFET with improved breakdown characteristics

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