JPS644059A - Manufacture of semiconductor integrated circuit device - Google Patents

Manufacture of semiconductor integrated circuit device

Info

Publication number
JPS644059A
JPS644059A JP62157655A JP15765587A JPS644059A JP S644059 A JPS644059 A JP S644059A JP 62157655 A JP62157655 A JP 62157655A JP 15765587 A JP15765587 A JP 15765587A JP S644059 A JPS644059 A JP S644059A
Authority
JP
Japan
Prior art keywords
type semiconductor
insulating film
electrodes
manufacture
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62157655A
Other languages
Japanese (ja)
Inventor
Masanori Hiroki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62157655A priority Critical patent/JPS644059A/en
Publication of JPS644059A publication Critical patent/JPS644059A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To simplify a manufacturing process, by forming first and second MISFET sidewalls at the same time. CONSTITUTION:Ions of n-type impurities are implanted into a P type semiconductor substrate 1 so as to form an (n) well NW. After a field insulating film 2 is formed to perform element isolation, a gate insulation film 3 is formed. Next, gate electrodes G1 to A3 and insulating films 4 are formed in prescribed shapes. Electrodes G1 and G2 are used as masks to form n<-> type semiconductor region 5 in the substrate 1. An electrode G3 is used as a mask to form a p<-> type semiconductor region 6 in the well NW. Next an insulating film 7 is formed. The insulating film 7 is provided with anisotropic etching, so that a sidewall 8 for a MISFETQ1, a MISFETQ2, and a sidewall 8 for the Q3 are formed on side planes of the electrodes G1 to G3 at the same time.
JP62157655A 1987-06-26 1987-06-26 Manufacture of semiconductor integrated circuit device Pending JPS644059A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62157655A JPS644059A (en) 1987-06-26 1987-06-26 Manufacture of semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62157655A JPS644059A (en) 1987-06-26 1987-06-26 Manufacture of semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS644059A true JPS644059A (en) 1989-01-09

Family

ID=15654474

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62157655A Pending JPS644059A (en) 1987-06-26 1987-06-26 Manufacture of semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS644059A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08250601A (en) * 1996-03-21 1996-09-27 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
US5917211A (en) * 1988-09-19 1999-06-29 Hitachi, Ltd. Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5917211A (en) * 1988-09-19 1999-06-29 Hitachi, Ltd. Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same
JPH08250601A (en) * 1996-03-21 1996-09-27 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof

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