KR100497154B1 - Organic light emitting display encapsulated with silicon-cavity and fabrication method thereof - Google Patents
Organic light emitting display encapsulated with silicon-cavity and fabrication method thereof Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 10
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- AHLBNYSZXLDEJQ-FWEHEUNISA-N orlistat Chemical compound CCCCCCCCCCC[C@H](OC(=O)[C@H](CC(C)C)NC=O)C[C@@H]1OC(=O)[C@H]1CCCCCC AHLBNYSZXLDEJQ-FWEHEUNISA-N 0.000 claims description 2
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- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 claims 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
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Abstract
본 발명은 실리콘 캐비티를 이용하여 봉지화한 유기발광소자에 관한 것이다. 기존의 메탈 캔(metal-can)을 이용한 봉지화(encapsulation)에서 실리콘 캐비티(silicon-cavity)를 이용한 봉지화(encapsulation)를 실시했을 경우, OLED 측면에서 손실되는 광을 실리콘 캐비티(silicon-cavity)의 (111)면이 반사경(mirror)의 역할을 하여 줌으로써 관측 각(observation angle)만큼 전면부로 반사 시켜 손실을 보상함으로써 휘도가 개선됨으로 개구율을 향상 시킬수 있으며, 실리콘 캐비티(Silicon-cavity)와 유기물이 증착된 기판에 접착을 향상시키는 UV-sealant를 질소분위기에서 사용함으로써 산호와 수분을 밀폐하여 OLED 열화를 줄일 수 있다. 또한 실리콘 캐비티(silicon-cavity)의 일괄제조 공정을 통하여 값싸게 대량생산 하는데 적합하다.The present invention relates to an organic light emitting device encapsulated using a silicon cavity. In the case of encapsulation using silicon-cavity in encapsulation using metal-can, the light lost from the OLED side is reduced to silicon-cavity. As the (111) plane of the mirror serves as a mirror, the reflection is compensated for the loss by the observation angle, so that the luminance can be improved, and the aperture ratio can be improved, and silicon-cavity and organic matter By using UV-sealant in a nitrogen atmosphere that improves adhesion to the deposited substrate, it seals corals and moisture, reducing OLED degradation. It is also suitable for inexpensive mass production through the batch manufacturing process of silicon-cavity.
Description
본 발명은 실리콘 캐비티를 이용하여 봉지화된 유기발광소자에 관한 것으로, 더욱 상세하게는 일반적으로 제작되고 있는 메탈 캔(metal-can)방식의 봉지화(encapsulation)가 아닌 실리콘(silicon)을 미세가공 하여 만든 실리콘 캐비티(silicon-cavity)를 이용하여 봉지화(encapsulation)함으로써 발광효율을 증가 시키고 빛의 균일도, 개구율 향상 및 열화(degradation)를 개선시킨 OLED에 관한 것이다.The present invention relates to an organic light emitting device that is encapsulated using a silicon cavity, and more particularly, to microfabrication of silicon (silicon) rather than encapsulation of metal-can encapsulation, which is generally manufactured. By encapsulation using a silicon cavity (silicon-cavity) made by the present invention relates to an OLED to increase the luminous efficiency, light uniformity, aperture ratio improvement and degradation (degradation).
OLED 소자는 액정표시소자(LCD)와 같은 수광 형태의 소자와 달리 응답속도가 빠른 자체발광형 소자로서, 휘도가 우수하며, 구조가 간단하여 생산 시 제조가 간편하며, 경량 박형의 장점을 가지고 있어 차세대평판다스플레이소자로 주목 받고 있다. OLED devices are self-luminous devices with fast response speed, unlike light-receiving devices such as liquid crystal display devices (LCDs). They are excellent in brightness, simple in structure, simple to manufacture in production, and light in weight. It is attracting attention as the next generation flat panel display device.
평판 디스플레이(Flat Panel Display)시장에서 OLED는 가장 각광받는 상품성을 지닌 소자로서 가치를 인정받고 있는데, 이는 OLED의 무게의 경량성과 휴대의 용이성, 고휘도, 저전력, flexibility 구현 가능 이라는 장점이 존재하기 때문이다. In flat panel display market, OLED is recognized as the most prominent device because of its advantages such as light weight, ease of portability, high brightness, low power and flexibility. .
OLED 소자는 이러한 장점을 살려서 휴대용 단말기, 카네비게이터, 노트북 컴퓨터와 같은 소형 디스플레이 소자로서 그 용도가 다양하다. 하지만 이러한 장점이 존재하는 것과는 반대로 발광효율이 낮고 수명이 짧다는 문제점을 가지고 있는데 이는 유기물 자체 개발과 아울러 OLED의 봉지화를 통해 소자를 밀봉함으로써 문제를 해결할 수 있다. 이 중 수분이나 산소의 침입으로 인한 소자의 열화(degradation)는 OLED자체의 효율을 떨어뜨리게 되는데, 이는 산소나 수분의 침투로 인하여 유기물 계면의 단일, 이중결합을 깨뜨려서 댕글링 본드를 생성하여 발광의 메커니즘이 되는 정공과 전자의 결합(excition)을 방해하게 되고 이는 발광효율을 저하시키는 요인이 된다. 또한 화소에 darkspot을 생성하거나 장수명화의 측정치인 half-lifetime을 감소시키기도 한다. excition은 정공(hole)과 전자(electron)의 결합으로 생기는 일종의 전자쌍으로, 이 전공과 전자가 쌍을 이루고 되면 에너지를 소모하면서 빛이 발광되어진다. 유기EL에서는 이 excition이 발광하는 원천이 되어지는 에너지원이다.OLED devices take advantage of these advantages and have a variety of uses as small display devices such as portable terminals, navigators, and notebook computers. However, in contrast to these advantages, there is a problem in that the luminous efficiency is low and the life is short. This problem can be solved by sealing the device through OLED development and encapsulation of OLED. Among these, degradation of the device due to invasion of water or oxygen decreases the efficiency of the OLED itself, which creates dangling bonds by breaking single and double bonds at an organic interface due to infiltration of oxygen or water. Interfering with the hole (excition) which becomes the mechanism of this is a factor that lowers the luminous efficiency. It also creates darkspots in pixels or reduces half-lifetime, a measure of longevity. Excitation is a kind of electron pair formed by the combination of holes and electrons. When these holes and electrons are paired, light is emitted while consuming energy. In organic EL, this excition is a source of energy that emits light.
일반적으로, 국내외의 관련 회사들이나 연구소에서는 이런 OLED 의 문제점을 개선하기 위하여 OLED에 기존의 LCD 패널에서 쓰이고 있는 메탈캔(metal-can)을 이용하여 불활성기체의 분위기에서 경화제로 흡착시키는 봉지화(encapsulation)방식을 채택하고 있다. 즉 OLED 소자를 제작한 후 글로브박스 안에서 다량의 불활성 기체를 주입한 상태를 유지시킨 후 경화제를 이용하여 봉지화(encapsulation)를 실시하고 있다. In general, related companies and research institutes at home and abroad are encapsulation of adsorption with a curing agent in an inert gas atmosphere using a metal-can used in an existing LCD panel to improve the OLED problem. Method is adopted. In other words, after fabricating an OLED device, a large amount of inert gas is maintained in a glove box, and then encapsulation is performed using a curing agent.
그러나, 메탈캔의 구조를 볼 때 빛을 효율적으로 모아줄 수 없으며 이는 발광효율에 있어서 개선되어야 하는 문제점으로 볼 수 있고, 또한 개구율 또한 감소시키는 원인으로 작용할 수 있다. 뿐만 아니라 메탈 캔과 유기물사이의 접착(adhesion)이 나쁨으로 말미암아 발생되는 산소와 수분의 침투와 그것으로 인해 발생되는 darkspot의 생성 및 half-lifetime의 감소, 발광효율의 감소와 같은 OLED 열화도 개선되어져야 한다.However, when looking at the structure of the metal can, the light cannot be efficiently collected, which can be viewed as a problem to be improved in luminous efficiency, and can also act as a cause of decreasing the aperture ratio. In addition, the degradation of OLEDs such as the penetration of oxygen and moisture caused by the poor adhesion between the metal can and the organic material, the generation of dark spots, the reduction of half-lifetime, and the reduction of luminous efficiency caused by the oxygen can be improved. You must lose.
따라서, 본 발명의 목적은 상기한 바의 문제점들을 개선하기 위한 것으로, OLED의 봉지화에 있어서 빛을 효율적으로 모아줄 수 있는 구조를 제공하여 발광효율을 개선시키는데 있으며, 또한 봉지화구조와 유기물사이의 접착(adhesion)을 향상시켜 산소와 수분의 침투를 차단하는데 있다.Accordingly, an object of the present invention is to improve the above problems, and to improve the luminous efficiency by providing a structure that can efficiently collect light in the encapsulation of the OLED, and also between the encapsulation structure and the organic material It is to prevent the penetration of oxygen and moisture by improving the adhesion (adhesion) of the.
기타 본 발명의 목적 및 특징은 후술하는 상세한 설명에서 보다 구체적으로 나타날 것이다.Other objects and features of the present invention will appear in more detail in the following detailed description.
상기 목적을 달성하기 위하여 본 발명에서는 기존의 메탈캔(metal-can)을 대체하여 실리콘(silicon)을 미세가공 한 실리콘 캐비티(silicon-cavity)를 이용하여 봉지화(silicon-cavity)를 실시하였다. In order to achieve the above object, in the present invention, encapsulation is performed using a silicon cavity, in which silicon is finely processed by replacing a conventional metal can.
구체적으로 본 발명은 기판, 양극, 정공주입층, 정공수송층, 발광층 역할을 하는 전자수송층 및 음극이 순차로 적층된 구조의 유기발광소자와, 상기 적층구조를 밀봉시키는 인캡슐레이션 구조물로서, 내부에 경사진 반사면이 형성된 실리콘 캐비티를 포함하여 구성되는 실리콘 캐비티를 이용하여 봉지화한 유기발광소자를 제공한다.Specifically, the present invention provides an organic light emitting device having a structure in which a substrate, an anode, a hole injection layer, a hole transport layer, an electron transport layer serving as a light emitting layer, and a cathode are sequentially stacked, and an encapsulation structure for sealing the stack structure. Provided is an organic light emitting device encapsulated using a silicon cavity including a silicon cavity having an inclined reflective surface formed thereon.
또한, 본 발명은 기판, 양극, 정공주입층, 정공수송층, 발광층 역할을 하는 전자수송층 및 음극이 순차로 적층 형성하고, 내부에 경사진 반사면이 형성된 실리콘 캐비티를 준비하고, 실리콘 캐비티를 상기 적층구조에 봉지화시켜 밀봉하는 것을 포함하여 이루어지는 실리콘 캐비티를 이용하여 봉지화한 유기발광소자 제조방법을 제공한다.In addition, the present invention, the substrate, the anode, the hole injection layer, the hole transport layer, the electron transport layer serving as a light emitting layer and the cathode are sequentially formed, the silicon cavity with a reflective surface inclined therein is prepared, the silicon cavity is laminated The present invention provides a method of manufacturing an organic light emitting device, which is encapsulated using a silicon cavity comprising encapsulating and sealing a structure.
실리콘 캐비티(silicon-cavity)를 이용하여 봉지화(silicon-cavity)된 OLED 소자는 실리콘 캐비티(silicon-cavity)의 (111) 배향면(orientation)이 거울면(groove mirror)으로 작용되게 되어 발광 시 측면쪽으로 손실되어 지는 빛을 보상함으로써 광의 균일도를 향상시킬 수 있을 뿐더러, 이는 휘도의 증가를 유발하게 되고, 개구율 또한 향상 시킬 수 있게 되었다. OLED devices encapsulated using silicon cavities have a (111) orientation of the silicon cavities acting as a mirror mirror to emit light. By compensating for the light lost to the side, not only can the light uniformity be improved, but this also leads to an increase in the brightness and the aperture ratio.
또한, 실리콘과 유기물 사이의 접착이 금속과 유기물 사이의 접착 보다 더 우수하기 때문에 외부환경(특히, 산소와 수분)의 차단의 용이하며, 이로 인하여 OLED 열화를 방지함으로써 half-lifetime의 증가와 darkspot의 생성 감소 및 발광효율의 향상을 얻을 수 있다. In addition, since adhesion between silicon and organic material is better than adhesion between metal and organic material, it is easy to block external environment (especially oxygen and moisture), thereby preventing OLED degradation and increasing half-lifetime and dark spot It is possible to obtain reduced production and improved luminous efficiency.
뿐만 아니라, 실리콘 캐비티(silicon-cavity)를 일괄제조 공정에 의해 대량생산이 가능함으로써 OLED의 단가를 낮출 수 있게 된다.In addition, the silicon cavity (silicon-cavity) can be mass-produced by the batch manufacturing process, thereby lowering the unit cost of the OLED.
이하, 첨부된 도면을 참조하며 실시예를 통하여 본 발명을 보다 상세하게 설명하기로 한다. Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.
도 1은 봉지화 되지않은 OLED가 유리기판(1) 위에 증착되었을때의 개략도 이다. 유리 기판 위에 양극(Anode)(2)으로 ITO를 새도우마스크(shadow mask)를 이용한 RF-스퍼터 방법을 이용하여 2000Å 두께로 증착하였다. 그리고 연속적으로 정공의 주입을 쉽게 하기 위하여 정공주입층(HIL: Hole-Injection-Layer)(3)으로 m-MTDATA(4,4',4"-Tris(3-methylphenyl-phenylamino)triphenylamine)를 200Å 두께로 형성하였고, 정공주입층 위에 정공의 이동을 원활히 하며 정공-전자쌍의 생성확률을 높임으로 양자효율 증대 시키기 위한 정공수송층(HTL: Hole-Transport-Layer)(4)으로 α-NPD(Bis[N-(1-naphthyl)-N-phenyl]benzidine)를 300Å 두께로 형성하였고, 정공수송층 위에 발광층(EML: Emission-Layer) 및 전자수송층(ETL: Electron-Transport-Layer)으로서 Alq3 (aluminum tris(8-hydroxyquinoline))를 열진공증착법에 의해서 증착하였다. 마지막으로 음극(Cathode)(6)으로서 발광효율을 높이고 전자의 주입을 쉽게 하기 위하여 일함수가 낮은 AlLi alloy(6)를 증착하였다. 이러한 과정은 5×10-5 torr의 압력에서 실시되었다.1 is a schematic view when an unsealed OLED is deposited on the glass substrate 1. ITO was deposited on the glass substrate as an anode (2) to a thickness of 2000 microseconds using an RF-sputter method using a shadow mask. In order to facilitate continuous hole injection, m-MTDATA (4,4 ', 4 "-Tris (3-methylphenyl-phenylamino) triphenylamine) was added to the hole injection layer (HIL: Hole-Injection-Layer) (3). It was formed to a thickness, and the hole transport layer (HTL: Hole-Transport-Layer) (4) to enhance the quantum efficiency by increasing the probability of hole-electron pair formation and smooth hole movement on the hole injection layer. N- (1-naphthyl) -N-phenyl] benzidine (300 nm thick) was formed, and Alq 3 (aluminum tris) as an emission layer (EML) and an electron transport layer (ETL) was formed on the hole transport layer. (8-hydroxyquinoline)) was deposited by thermal vacuum deposition Finally, as a cathode (6), AlLi alloy (6) having a low work function was deposited to increase luminous efficiency and facilitate electron injection. The procedure was carried out at a pressure of 5 × 10 −5 torr.
도 2는 금속캔으로서 SUS-can(8a)을 이용한 봉지화된 OLED의 개략도를 나타내고 있다. 도 1 에서 볼수 있는 OLED 소자 위에, 불활성 가스를 이용해서 산소와 수분의 침투를 막고 탈습제의 첨가 후, 금속캔을 봉지화(encapsulation)를 실시한 예이다.2 shows a schematic view of an encapsulated OLED using SUS-can 8a as a metal can. On the OLED device shown in FIG. 1, an inert gas is used to prevent the penetration of oxygen and water, and an encapsulation of the metal can is performed after addition of a dehumidifying agent.
도 3은 실리콘캐비티(Silicon-cavity)(8b)를 이용하여 봉지화된 OLED의 개략도이다. 실리콘 캐비티는 일례로서 다음과 같은 공정에 의해 제조할 수 있다.3 is a schematic diagram of an OLED encapsulated using a silicon-cavity 8b. The silicon cavity can be manufactured by the following process as an example.
먼저, 실리콘 웨이터(silicon wafer)위에 식각마스크(etch mask)로서 열산화막(thermal-oxide: SiO2)을 2㎛ 성장 시킨 뒤, 사진식각공정(photolithography)을 이용하여 4㎜×4㎜ 면적의 사각형 윈도우를 정의하고, 포토리지스트(photo-resist)를 통하여 스핀코팅(spin-cating)을 실시한다. 현상(develoip) 과정과 배이킹(baking) 과정을 끝낸 후, 산화막 식각액(etchant)인 BOE(Buffer Oxide Etching)를 이용하여 식각을 실시한다. 그 다음, 남아있는 포토리지스트를 제거한다.First, a thermal oxide (SiO 2 ) was grown on a silicon wafer as a etch mask (2 nm) by 2 μm, and then, using photolithography, a square of 4 mm × 4 mm area. A window is defined, and spin-cating is performed through photo-resist. After the develoip process and the baking process are finished, etching is performed using BOE (Buffer Oxide Etching), which is an oxide etchant. Then, remove the remaining photoresist.
실리콘 웨이퍼(silicon wafer)의 식각마스크(etch mask)로 사용되는 열산화막(thermal oxide: SiO2)이 패터닝(patterning)된 웨이퍼에 TMAH(20wt.%)용액을 이용하여 90℃에 3분동안 이방성 식각(isotropic etching)을 실시하게 되면, 4개의 경사진 반사면(9)으로 둘러 쌓인 캐비티(cavity)구조가 만들어지게 된다. 상기 반사면은 (111) 배향면에 해당한다. 실리콘 캐비티의 반사면의 각도는 반사효율을 높이기 위하여 45 ~ 60。의 범위가 바람직하다.Anisotropy at 90 ° C for 3 minutes using TMAH (20wt.%) Solution on a wafer patterned with thermal oxide (SiO 2 ), which is used as an etch mask of a silicon wafer. When isotropic etching is performed, a cavity structure surrounded by four inclined reflective surfaces 9 is created. The reflective surface corresponds to the (111) alignment surface. The angle of the reflective surface of the silicon cavity is preferably in the range of 45 to 60 ° in order to increase the reflection efficiency.
이와 같은 반사면의 경사구조를 위해서는 이방성식각을 3분 ~ 5분의 식각시간에 85℃ ~ 90℃의 온도에서 실시하는 것이 바람직하다.For such an inclined structure of the reflective surface, it is preferable to perform anisotropic etching at a temperature of 85 ° C. to 90 ° C. at an etching time of 3 minutes to 5 minutes.
본 발명의 일실시예에서 캐비티의 깊이는 1.5㎛ 이고, 반사면의 경사각은 54.74。를 나타내었다. 이때 각각의 (111) 배향면은 관측각(observation angle)만큼 벗어난 측면쪽의 광원을 전면으로 반사 시키는 반사경(groove mirror)으로 작동하게 된다. 즉, 발광 시 ITO 전면부로 나오는 광 이외에 측면에서 유기 층으로 흡수되어 손실되어지는 광을 다시 실리콘 캐비티(silicon-cavity)의 거울면(111)을 이용하여 관측 각(observation angle)만큼 전면부로 다시 보상해준다. 이러한 반사경으로 인하여 측면에서 소비되어지는 광의 효율을 증가시키게 되고 더불어 휘도 및 발광효율이 증가하게 된다. In one embodiment of the present invention the depth of the cavity is 1.5㎛, the inclination angle of the reflective surface was 54.74. In this case, each of the (111) alignment planes operates as a mirror mirror for reflecting the light source on the side that is off by the observation angle to the front. That is, in addition to the light emitted from the front side of the ITO during light emission, the light that is absorbed and lost by the organic layer from the side is again compensated to the front side by the observation angle using the mirror surface 111 of the silicon cavity. Do it. This reflector increases the efficiency of light consumed from the side, and also increases the luminance and luminous efficiency.
이때, 실리콘 캐비티(silicon-cavity)의 두께는 2㎛였으며, 실리콘 캐비티와 OLED까지의 거리는 0.3㎛ 이상으로 유지하는 것이 바람직하다. 실리콘 캐비티와 OLED 소자사이의 거리는 0.3㎛이상 유지하는 것이 바람직한 이유는 소자와 캐비티 사이의 거리가 가까워지게 되면 소자에 전압을 걸어주었을 때 쇼트가 날 경우가 발생하게 된다. 이는 OLED의 발광을 나타나지 않게 되는 영향을 초래하기 때문이다. At this time, the thickness of the silicon cavity (silicon-cavity) was 2㎛, the distance between the silicon cavity and the OLED is preferably maintained at 0.3㎛ or more. The reason why the distance between the silicon cavity and the OLED device is preferably 0.3 μm or more is that when the distance between the device and the cavity becomes closer, a short circuit occurs when a voltage is applied to the device. This is because it causes the effect that the light emission of the OLED does not appear.
제조된 실리콘 캐비티에 반사율을 높이기 위해서 반사계수가 높은 메탈(metal: 알루미늄, 구리, 골드, 몰리, 니켈, 백금, 은, 텅스텐)을 증착하거나 코팅할 수도 있다.In order to increase the reflectance, the metal cavity may be deposited or coated with a high reflection coefficient metal (aluminum, copper, gold, molle, nickel, platinum, silver, tungsten).
실리콘 캐비티가 준비되면, 도 1에서 볼 수 있는 OLED 소자에 봉지화(encapsulation)를 실시한다. 글로브박스 안에서 충분한 질소를 공급하여 줌으로써 산소와 수분의 침투를 방지하고 OLED 열화로 인한 darkspot의 생성을 방지할 뿐더러 소자의 장수명화 요소인 half-lifetime의 감소를 막아주는 역할을 한다. 이와 같이 충분한 질소분위기를 생성한 상태에서 UV-sealant(7)를 접촉면에 코팅하여 주고 지그를 사용하여 봉지화(encapsulation)한다. 지그는 실리콘 캐비티와 OLED를 접합시키기 위한 수단으로서, SUS로 형성된 구조체이며, 여기에 OLED소자를 넣어주고 그위에 SEALANT를 바르고 다시 실리콘 캐비티를 얻어서 일정의 POWER를 가하여 둘 사이를 봉합시키게 된다.When the silicon cavity is prepared, encapsulation is performed on the OLED device shown in FIG. 1. By supplying enough nitrogen in the glove box, it prevents the penetration of oxygen and moisture, prevents dark spots due to OLED deterioration, and prevents the reduction of half-lifetime, which is the long life factor of the device. UV-sealant (7) is coated on the contact surface in a state of generating a sufficient nitrogen atmosphere and encapsulation using a jig. Jig is a structure formed by SUS as a means for bonding silicon cavity and OLED. The jig is put in an OLED element, a SEALANT is applied on it, and a silicon cavity is obtained again to apply a certain power to seal the two.
상기한 바의 구성을 갖는 본 발명의 OLED 봉지화(encapsulation)에 따르면, 고휘도의 특성과 발광효율의 증대를 얻을 수 있어 다른 평판 디스플레이(Flat-Panel-Display)의 봉지화(encapsulation)에서도 응용이 가능하다. 또한 기존의 메탈 캔을 이용한 봉지화(encapsulation)에 비하여 OLED 열화 방지 및 발광효율 증대 및 빛의 균일도 증대의 효과가 있다. 더불어 실리콘 캐비티(silicon-cavity)의 일괄제조 공정을 통하여 대량생산을 할 수 있으므로 원가절감의 효과 또한 존재한다.According to the OLED encapsulation of the present invention having the above-described configuration, it is possible to obtain high brightness characteristics and increase in luminous efficiency, so that the application is also possible in the encapsulation of other flat-panel-displays. It is possible. In addition, there is an effect of preventing OLED degradation, increasing luminous efficiency, and increasing light uniformity, compared to encapsulation using a conventional metal can. In addition, there is a cost reduction effect because mass production can be performed through a batch manufacturing process of silicon-cavity.
도 1은 봉지화 되지않은 OLED가 유리기판 위에 증착되었을때의 개략도이다.1 is a schematic diagram when an unsealed OLED is deposited on a glass substrate.
도 2은 일반적인 SUS-can을 이용하여 봉지화한 OLED의 개략도이다.2 is a schematic view of an OLED encapsulated using a general SUS-can.
도 3은 본 발명에 의한 OLED의 개략도이다.3 is a schematic view of an OLED according to the present invention.
도 4는 본 발명에 의한 OLED의 실시 예를 보여 주는 사진들이다.Figure 4 is a picture showing an embodiment of the OLED according to the present invention.
*** 도면의 주요 부분에 대한 부호의 설명 ****** Explanation of symbols for the main parts of the drawing ***
1:유리기판 2:양극1: glass substrate 2: anode
3:정공주입층 4:정공수송층3: hole injection layer 4: hole transport layer
5:발광층 및 전자수송층 6:음극 5: light emitting layer and electron transport layer 6: cathode
7:UV 실런트 8a:메탈캔7: UV sealant 8a: metal cans
8b:실리콘 캐비티 9:반사면8b: Silicon cavity 9: Reflecting surface
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| JPH0290493A (en) * | 1988-09-27 | 1990-03-29 | Clarion Co Ltd | Alternating current drive type thin film el element |
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