NL190209C - DEVICE FOR NEUTRALIZING A POSITIVE ION BUNDLE. - Google Patents

DEVICE FOR NEUTRALIZING A POSITIVE ION BUNDLE.

Info

Publication number
NL190209C
NL190209C NL8104377A NL8104377A NL190209C NL 190209 C NL190209 C NL 190209C NL 8104377 A NL8104377 A NL 8104377A NL 8104377 A NL8104377 A NL 8104377A NL 190209 C NL190209 C NL 190209C
Authority
NL
Netherlands
Prior art keywords
neutralizing
positive ion
ion bundle
bundle
positive
Prior art date
Application number
NL8104377A
Other languages
Dutch (nl)
Other versions
NL8104377A (en
NL190209B (en
Original Assignee
Varian Associates
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates filed Critical Varian Associates
Publication of NL8104377A publication Critical patent/NL8104377A/en
Publication of NL190209B publication Critical patent/NL190209B/en
Application granted granted Critical
Publication of NL190209C publication Critical patent/NL190209C/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
NL8104377A 1980-09-24 1981-09-23 DEVICE FOR NEUTRALIZING A POSITIVE ION BUNDLE. NL190209C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US19029780A 1980-09-24 1980-09-24
US19029780 1980-09-24

Publications (3)

Publication Number Publication Date
NL8104377A NL8104377A (en) 1982-04-16
NL190209B NL190209B (en) 1993-07-01
NL190209C true NL190209C (en) 1993-12-01

Family

ID=22700763

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8104377A NL190209C (en) 1980-09-24 1981-09-23 DEVICE FOR NEUTRALIZING A POSITIVE ION BUNDLE.

Country Status (6)

Country Link
JP (1) JPS5787056A (en)
CH (1) CH653806A5 (en)
DE (1) DE3136787A1 (en)
FR (1) FR2490873A1 (en)
GB (1) GB2084792B (en)
NL (1) NL190209C (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5882519A (en) * 1981-11-12 1983-05-18 Toshiba Corp Ion implantation for semiconductor
JPS59196600A (en) * 1983-04-21 1984-11-07 工業技術院長 Neutral particle implanting method and its device
JPS6072228A (en) * 1983-09-28 1985-04-24 Toshiba Corp Method for inpurity doping into semiconductor substrate
JPS61230252A (en) * 1985-04-05 1986-10-14 Hitachi Ltd Ion implantation device
US4675530A (en) * 1985-07-11 1987-06-23 Eaton Corporation Charge density detector for beam implantation
JPS62103952A (en) * 1985-10-29 1987-05-14 Toshiba Corp Ion implanting apparatus
JPS62154447A (en) * 1985-12-25 1987-07-09 Sumitomo Eaton Noba Kk Charge restraint device for wafer
JPS63126220A (en) * 1986-11-14 1988-05-30 Mitsubishi Electric Corp Impurity doping method
JPS63184256A (en) * 1987-01-27 1988-07-29 Tokyo Electron Ltd Ion implatation device
US4916311A (en) * 1987-03-12 1990-04-10 Mitsubishi Denki Kabushiki Kaisha Ion beaming irradiating apparatus including ion neutralizer
EP3389078A1 (en) 2017-04-13 2018-10-17 The Swatch Group Research and Development Ltd Method for implanting multi-charged ions on a surface of an object to be treated and installation for implementing said method

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3676672A (en) * 1969-02-03 1972-07-11 Benjamin B Meckel Large diameter ion beam apparatus with an apertured plate electrode to maintain uniform flux density across the beam
US3847115A (en) * 1973-05-02 1974-11-12 Nasa System for depositing thin films
US4135097A (en) * 1977-05-05 1979-01-16 International Business Machines Corporation Ion implantation apparatus for controlling the surface potential of a target surface
FR2389998B1 (en) * 1977-05-05 1981-11-20 Ibm
US4118630A (en) * 1977-05-05 1978-10-03 International Business Machines Corporation Ion implantation apparatus with a cooled structure controlling the surface potential of a target surface
JPS54124879A (en) * 1978-03-22 1979-09-28 Nippon Telegr & Teleph Corp <Ntt> Ion beam deposition
JPS56165192A (en) * 1980-05-26 1981-12-18 Fuji Electric Co Ltd Circle and arcuate generating system

Also Published As

Publication number Publication date
JPS5787056A (en) 1982-05-31
FR2490873B1 (en) 1985-05-17
NL8104377A (en) 1982-04-16
GB2084792A (en) 1982-04-15
CH653806A5 (en) 1986-01-15
DE3136787C2 (en) 1992-01-23
GB2084792B (en) 1984-08-30
JPS6212625B2 (en) 1987-03-19
DE3136787A1 (en) 1982-08-26
FR2490873A1 (en) 1982-03-26
NL190209B (en) 1993-07-01

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Legal Events

Date Code Title Description
A85 Still pending on 85-01-01
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
V1 Lapsed because of non-payment of the annual fee

Effective date: 20010401