NL7812026A - Veldeffektinrichting. - Google Patents

Veldeffektinrichting.

Info

Publication number: NL7812026A
Authority: NL; Netherlands
Prior art keywords: field; field device; device device
Prior art date: 1977-12-15

Application number

NL7812026A

Other languages

English (en)

Original Assignee

Philips Nv

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1977-12-15

Filing date

1978-12-11

Publication date

1979-06-19

1978-12-11 Application filed by Philips Nv filed Critical Philips Nv

1979-06-19 Publication of NL7812026A publication Critical patent/NL7812026A/nl

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/65—Lateral DMOS [LDMOS] FETs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs
- H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/115—Resistive field plates, e.g. semi-insulating field plates
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/605—Source, drain, or gate electrodes for FETs comprising highly resistive materials

NL7812026A 1977-12-15 1978-12-11 Veldeffektinrichting. NL7812026A (nl)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
GB5220977		1977-12-15
GB7836153A GB2011178B (en)	1977-12-15	1978-09-08	Fieldeffect devices

Publications (1)

Publication Number	Publication Date
NL7812026A true NL7812026A (nl)	1979-06-19

Family

ID=26267012

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL7812026A NL7812026A (nl)	1977-12-15	1978-12-11	Veldeffektinrichting.

Country Status (7)

Country	Link
US (1)	US4270137A (nl)
JP (1)	JPS5489588A (nl)
AU (1)	AU4240378A (nl)
DE (1)	DE2853736C2 (nl)
FR (1)	FR2412170A1 (nl)
GB (1)	GB2011178B (nl)
NL (1)	NL7812026A (nl)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4475964A (en) *	1979-02-20	1984-10-09	Tokyo Shibaura Denki Kabushiki Kaisha	Method of manufacturing a semiconductor device
EP0020164B1 (en) *	1979-05-30	1983-05-11	Xerox Corporation	Monolithic hvmosfet array
GB2070329B (en) *	1980-01-25	1983-10-26	Tokyo Shibaura Electric Co	Semiconductor memory device
US4489340A (en) *	1980-02-04	1984-12-18	Nippon Telegraph & Telephone Public Corporation	PNPN Light sensitive semiconductor switch with phototransistor connected across inner base regions
US4947232A (en) *	1980-03-22	1990-08-07	Sharp Kabushiki Kaisha	High voltage MOS transistor
JPS56169369A (en) *	1980-05-30	1981-12-26	Sharp Corp	High withstand voltage mos field effect semiconductor device
JPS56169368A (en) *	1980-05-30	1981-12-26	Sharp Corp	High withstand voltage mos field effect semiconductor device
US4467312A (en) *	1980-12-23	1984-08-21	Tokyo Shibaura Denki Kabushiki Kaisha	Semiconductor resistor device
US4430663A (en) *	1981-03-25	1984-02-07	Bell Telephone Laboratories, Incorporated	Prevention of surface channels in silicon semiconductor devices
JPS583285A (ja) *	1981-06-30	1983-01-10	Fujitsu Ltd	半導体集積回路の保護装置
US4810663A (en) *	1981-12-07	1989-03-07	Massachusetts Institute Of Technology	Method of forming conductive path by low power laser pulse
US4585490A (en) *	1981-12-07	1986-04-29	Massachusetts Institute Of Technology	Method of making a conductive path in multi-layer metal structures by low power laser beam
US4636404A (en) *	1982-06-17	1987-01-13	Mass. Institute Of Technology	Method and apparatus for forming low resistance lateral links in a semiconductor device
NL8203323A (nl) *	1982-08-25	1984-03-16	Philips Nv	Geintegreerde weerstand.
NL8203870A (nl) *	1982-10-06	1984-05-01	Philips Nv	Halfgeleiderinrichting.
JPS5994873A (ja) *	1982-11-22	1984-05-31	Nissan Motor Co Ltd	Ｍｏｓトランジスタ
DE3370245D1 (de) *	1982-11-27	1987-04-16	Nissan Motor	A mos transistor
JPS5998557A (ja) *	1982-11-27	1984-06-06	Nissan Motor Co Ltd	Ｍｏｓトランジスタ
JPS61114574A (ja) *	1984-11-09	1986-06-02	Hitachi Ltd	半導体装置
JPH0620110B2 (ja) *	1985-10-07	1994-03-16	日本電気株式会社	半導体装置
US4989058A (en) *	1985-11-27	1991-01-29	North American Philips Corp.	Fast switching lateral insulated gate transistors
US4823173A (en) *	1986-01-07	1989-04-18	Harris Corporation	High voltage lateral MOS structure with depleted top gate region
FR2596922B1 (fr) *	1986-04-04	1988-05-20	Thomson Csf	Resistance integree sur un substrat semi-conducteur
JPS63136668A (ja) *	1986-11-28	1988-06-08	Fuji Electric Co Ltd	半導体装置の製造方法
JP2585331B2 (ja) *	1986-12-26	1997-02-26	株式会社東芝	高耐圧プレーナ素子
US4900693A (en) *	1987-12-21	1990-02-13	United Technologies	Process for making polysilicon field plate with improved suppression of parasitic transistors
JP2667857B2 (ja) *	1988-02-12	1997-10-27	株式会社日立製作所	半導体装置およびその製造方法
US5003372A (en) *	1988-06-16	1991-03-26	Hyundai Electronics Industries Co., Ltd.	High breakdown voltage semiconductor device
JP2530033B2 (ja) *	1990-02-08	1996-09-04	株式会社東芝	絶縁ゲ―ト型集積回路
US5234853A (en) *	1990-03-05	1993-08-10	Fujitsu Limited	Method of producing a high voltage MOS transistor
DE69111096T2 (de) *	1990-03-05	1996-04-11	Fujitsu Ltd	MOS-Transistor für hohe Spannungen und dessen Herstellungsverfahren und Halbleiterbauelement mit MOS-Transistor für hohe Spannungen und dessen Herstellungsverfahren.
DE69125794T2 (de) *	1990-11-23	1997-11-27	Texas Instruments Inc	Verfahren zum gleichzeitigen Herstellen eines Feldeffekttransistors mit isoliertem Gate und eines Bipolartransistors
DE69232679T2 (de) *	1991-01-31	2003-03-20	Toshiba Kawasaki Kk	Halbleiterbauelement für hohe Durchbruchsspannungen
US5231301A (en) *	1991-10-02	1993-07-27	Lucas Novasensor	Semiconductor sensor with piezoresistors and improved electrostatic structures
JP3456242B2 (ja) *	1993-01-07	2003-10-14	セイコーエプソン株式会社	半導体装置及びその製造方法
US5486718A (en) *	1994-07-05	1996-01-23	Motorola, Inc.	High voltage planar edge termination structure and method of making same
KR100244282B1 (ko) *	1997-08-25	2000-02-01	김영환	고전압 트랜지스터의 구조 및 제조 방법
GB0003185D0 (en) *	2000-02-12	2000-04-05	Koninkl Philips Electronics Nv	An insulated gate field effect device
US6794719B2 (en) *	2001-06-28	2004-09-21	Koninklijke Philips Electronics N.V.	HV-SOI LDMOS device with integrated diode to improve reliability and avalanche ruggedness
US8110465B2 (en)	2007-07-30	2012-02-07	International Business Machines Corporation	Field effect transistor having an asymmetric gate electrode
US8735981B2 (en) *	2009-06-17	2014-05-27	Infineon Technologies Austria Ag	Transistor component having an amorphous semi-isolating channel control layer
US8809949B2 (en) *	2009-06-17	2014-08-19	Infineon Technologies Austria Ag	Transistor component having an amorphous channel control layer
JP5703829B2 (ja) *	2011-02-24	2015-04-22	サンケン電気株式会社	半導体装置
WO2014155565A1 (ja) *	2013-03-27	2014-10-02	トヨタ自動車株式会社	縦型半導体装置
JP6222002B2 (ja) *	2014-08-22	2017-11-01	トヨタ自動車株式会社	電流遮断装置
CN113270477A (zh) *	2021-04-08	2021-08-17	西安电子科技大学	一种降低主结体电场的积累场效应晶体管及其制作方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3714522A (en) *	1968-11-14	1973-01-30	Kogyo Gijutsuin Agency Of Ind	Semiconductor device having surface electric-field effect
GB1260618A (en) *	1969-08-09	1972-01-19	Soc Gen Semiconduttori Spa	Planar junctions with integrated resistor, for high voltages
BE785747A (fr) *	1971-07-02	1973-01-02	Philips Nv	Dispositif semiconducteur
US3845495A (en) *	1971-09-23	1974-10-29	Signetics Corp	High voltage, high frequency double diffused metal oxide semiconductor device
US3946418A (en) *	1972-11-01	1976-03-23	General Electric Company	Resistive gate field effect transistor
US4009483A (en) *	1974-04-04	1977-02-22	Motorola, Inc.	Implementation of surface sensitive semiconductor devices
US4035829A (en) *	1975-01-13	1977-07-12	Rca Corporation	Semiconductor device and method of electrically isolating circuit components thereon
JPS5193878A (nl) *	1975-02-17	1976-08-17
JPS51128273A (en) *	1975-04-30	1976-11-09	Sony Corp	Insulating gate type field effect transistor
US4058822A (en) *	1975-05-30	1977-11-15	Sharp Kabushiki Kaisha	High voltage, low on-resistance diffusion-self-alignment metal oxide semiconductor device and manufacture thereof
JPS5368581A (en) *	1976-12-01	1978-06-19	Hitachi Ltd	Semiconductor device

1978
- 1978-09-08 GB GB7836153A patent/GB2011178B/en not_active Expired
- 1978-12-11 NL NL7812026A patent/NL7812026A/nl unknown
- 1978-12-11 AU AU42403/78A patent/AU4240378A/en active Pending
- 1978-12-13 DE DE2853736A patent/DE2853736C2/de not_active Expired
- 1978-12-15 US US05/970,033 patent/US4270137A/en not_active Expired - Lifetime
- 1978-12-15 FR FR7835355A patent/FR2412170A1/fr active Granted
- 1978-12-15 JP JP15428478A patent/JPS5489588A/ja active Pending

Also Published As

Publication number	Publication date
AU4240378A (en)	1979-06-21
DE2853736A1 (de)	1979-06-21
FR2412170A1 (fr)	1979-07-13
GB2011178A (en)	1979-07-04
US4270137A (en)	1981-05-26
GB2011178B (en)	1982-03-17
DE2853736C2 (de)	1986-12-11
JPS5489588A (en)	1979-07-16
FR2412170B1 (nl)	1984-02-24

Publication	Publication Date	Title
NL7812026A (nl)	1979-06-19	Veldeffektinrichting.
NL7806723A (nl)	1978-12-27	Hemodialysatorinrichting.
NL7802260A (nl)	1979-05-30	Halfgeleiderinrichting.
NO144435C (no)	1981-08-26	Forbindelsesanordning.
NL7801017A (nl)	1978-07-31	Aansluitinrichting.
NL7808105A (nl)	1979-02-06	Ladingsgekoppelde inrichting.
NO153149C (no)	1986-01-22	Frigjoerbar forbindelsesanordning.
IT7825882A0 (it)	1978-07-19	Dispositivo di posizionamento.
NL7807236A (nl)	1979-01-09	Halfgeleiderinrichting.
NL7700879A (nl)	1978-08-01	Halfgeleiderinrichting.
NL7805992A (nl)	1978-12-05	Halfgeleiderinrichting.
NL7802222A (nl)	1978-09-05	Halfgeleiderinrichting.
NL7806730A (nl)	1978-12-28	Draaiinrichting.
NL7713758A (nl)	1979-06-15	Halfgeleiderinrichting.
NL7807893A (nl)	1979-01-30	Magnetiseringsinrichting.
NO782252L (no)	1979-01-03	Tuftenaalanordning.
NL189173C (nl)	1993-02-01	Instelinrichting.
NL185750C (nl)	1990-07-16	Computertomografische inrichting.
NL7801082A (nl)	1978-08-04	Halfgeleiderinrichting.
NL7812462A (nl)	1979-07-03	Halfgeleiderinrichting.
NL7712482A (nl)	1979-05-16	Peilinrichting.
NO781237L (no)	1978-12-12	Lokaliseringsanordning.
NL7705729A (nl)	1978-11-28	Halfgeleiderinrichting.
NL7806714A (nl)	1979-01-29	Hef-kantelinrichting.
IT7825723A0 (it)	1978-07-14	Dispositivo antiriverberazione.