SE322579B - - Google Patents

Info

Publication number
SE322579B
SE322579B SE17363/67A SE1736367A SE322579B SE 322579 B SE322579 B SE 322579B SE 17363/67 A SE17363/67 A SE 17363/67A SE 1736367 A SE1736367 A SE 1736367A SE 322579 B SE322579 B SE 322579B
Authority
SE
Sweden
Prior art keywords
region
contact
gate
main region
anode
Prior art date
Application number
SE17363/67A
Other languages
English (en)
Inventor
I Somos
Intyre J Mc
D Piccone
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of SE322579B publication Critical patent/SE322579B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13034—Silicon Controlled Rectifier [SCR]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
SE17363/67A 1966-12-19 1967-12-18 SE322579B (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US60283766A 1966-12-19 1966-12-19

Publications (1)

Publication Number Publication Date
SE322579B true SE322579B (xx) 1970-04-13

Family

ID=24412992

Family Applications (1)

Application Number Title Priority Date Filing Date
SE17363/67A SE322579B (xx) 1966-12-19 1967-12-18

Country Status (6)

Country Link
US (1) US3489962A (xx)
BE (1) BE708190A (xx)
CH (1) CH478460A (xx)
ES (1) ES348224A1 (xx)
GB (1) GB1211745A (xx)
SE (1) SE322579B (xx)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3577042A (en) * 1967-06-19 1971-05-04 Int Rectifier Corp Gate connection for controlled rectifiers
CH460957A (de) * 1967-08-03 1968-08-15 Bbc Brown Boveri & Cie Schaltungsanordnung mit mehreren Halbleiterelementen
SE320729B (xx) * 1968-06-05 1970-02-16 Asea Ab
JPS508315B1 (xx) * 1970-02-20 1975-04-03
US3740584A (en) * 1971-06-08 1973-06-19 Gen Electric High arrangement frequency scr gating
US3967308A (en) * 1971-10-01 1976-06-29 Hitachi, Ltd. Semiconductor controlled rectifier
US3914783A (en) * 1971-10-01 1975-10-21 Hitachi Ltd Multi-layer semiconductor device
DE2237086C3 (de) * 1972-07-28 1979-01-18 Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg Steuerbares Halbleitergleichrichterbauelement
US4028721A (en) * 1973-08-01 1977-06-07 Hitachi, Ltd. Semiconductor controlled rectifier device
US4063278A (en) * 1975-01-06 1977-12-13 Hutson Jearld L Semiconductor switch having sensitive gate characteristics at high temperatures
DE2538549C2 (de) * 1975-08-29 1985-06-13 Siemens AG, 1000 Berlin und 8000 München Mit Licht steuerbarer Thyristor
US4047219A (en) * 1975-11-03 1977-09-06 General Electric Company Radiation sensitive thyristor structure with isolated detector
US4092703A (en) * 1977-03-15 1978-05-30 Kabushiki Kaisha Meidensha Gate controlled semiconductor device
US4219833A (en) * 1978-05-22 1980-08-26 Electric Power Research Institute, Inc. Multigate light fired thyristor and method
US4207583A (en) * 1978-07-27 1980-06-10 Electric Power Research Institute, Inc. Multiple gated light fired thyristor with non-critical light pipe coupling
US4305084A (en) * 1979-11-16 1981-12-08 General Electric Company Semiconductor switching device capable of turn-on only at low applied voltages using self pinch-off means
JPS6188563A (ja) * 1984-10-08 1986-05-06 Toshiba Corp 半導体スイツチ

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3044147A (en) * 1959-04-21 1962-07-17 Pacific Semiconductors Inc Semiconductor technology method of contacting a body
US3176147A (en) * 1959-11-17 1965-03-30 Ibm Parallel connected two-terminal semiconductor devices of different negative resistance characteristics
NL265766A (xx) * 1960-06-10
FR1324783A (fr) * 1961-06-05 1963-04-19 Gen Electric Perfectionnements aux dispositifs à semi-conducteurs et procédés de leur fabrication
US3296502A (en) * 1962-11-28 1967-01-03 Gen Instrument Corp Variable photosensitive semiconductor device having a graduatingly different operable surface area
US3391310A (en) * 1964-01-13 1968-07-02 Gen Electric Semiconductor switch
US3328584A (en) * 1964-01-17 1967-06-27 Int Rectifier Corp Five-layer light switch
GB1095469A (xx) * 1964-03-21
US3401320A (en) * 1966-05-12 1968-09-10 Int Rectifier Corp Positive pulse turn-off controlled rectifier

Also Published As

Publication number Publication date
ES348224A1 (es) 1969-03-01
US3489962A (en) 1970-01-13
GB1211745A (en) 1970-11-11
BE708190A (xx) 1968-06-19
CH478460A (de) 1969-09-15

Similar Documents

Publication Publication Date Title
US3360696A (en) Five-layer symmetrical semiconductor switch
SE322579B (xx)
US3727116A (en) Integral thyristor-rectifier device
US4016593A (en) Bidirectional photothyristor device
US4454527A (en) Thyristor having controllable emitter short circuits and a method for its operation
US3476992A (en) Geometry of shorted-cathode-emitter for low and high power thyristor
GB1156997A (en) Improvements in and relating to Controllable Semi-Conductor Devices
US3337783A (en) Shorted emitter controlled rectifier with improved turn-off gain
GB1312146A (en) Thyristor with added gate and fast turn-off circuit
GB1016095A (en) Semiconductor switching device
US3896476A (en) Semiconductor switching device
US3443171A (en) Symmetrical switching controlled rectifier with non-overlapped emitters
GB1579938A (en) Semiconductor devices
US3622845A (en) Scr with amplified emitter gate
US3300694A (en) Semiconductor controlled rectifier with firing pin portion on emitter
US3078196A (en) Semiconductive switch
US3696273A (en) Bilateral, gate-controlled semiconductor devices
US3332143A (en) Semiconductor devices with epitaxial contour
US3504242A (en) Switching power transistor with thyristor overload capacity
US4137545A (en) Gate turn-off thyristor with anode rectifying contact to non-regenerative section
US3586932A (en) Five layer gate controlled thyristor with novel turn on characteristics
US4062032A (en) Gate turn off semiconductor rectifiers
US5093705A (en) Thyristor with reduced central zone thickness
US3331000A (en) Gate turn off semiconductor switch having a composite gate region with different impurity concentrations
US4910573A (en) Gate turn-off thyristor and method of producing same