SU855782A1 - Electron emitter - Google Patents
Electron emitter Download PDFInfo
- Publication number
- SU855782A1 SU855782A1 SU772501095A SU2501095A SU855782A1 SU 855782 A1 SU855782 A1 SU 855782A1 SU 772501095 A SU772501095 A SU 772501095A SU 2501095 A SU2501095 A SU 2501095A SU 855782 A1 SU855782 A1 SU 855782A1
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- SU
- USSR - Soviet Union
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- electrodes
- emitter
- base
- film
- activator
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- Cold Cathode And The Manufacture (AREA)
Description
1one
Изобретение относитс к электро вакуумным приборам и может быть использовано , в частности, при конструировании вакуумных миниатюрных электронных устройств.The invention relates to electro-vacuum devices and can be used, in particular, in the design of vacuum miniature electronic devices.
Известен ненакаливаемый эмиттер электронов, содержащий пластинчатое диэлектрическое основание, два расположенных на основании контактных электрода и расположенную между последними островковую металлическую пленку fl Недостатками этого эмиттера вл ютс низка эмиссионна способностьThe non-heated emitter of electrons is known, which contains a plate-like dielectric base, two located on the base of the contact electrodes and an island metal film located between the latter fl. The disadvantages of this emitter are low emissivity
JP JpH низка эффективность -р- , гдеJP JpH low efficiency -r- where
J - проток проводимости между электродами .J - conduction flow between the electrodes.
Известен также эмиттер электронов, содержащий пластинчатое диэлектрическое основание, контактные пленочные электроды, островковую металлическую пленку и активатор 2.Also known is an electron emitter containing a plate-shaped dielectric base, contact film electrodes, an island metal film and an activator 2.
Однако этот эмиттер имеет значительный паразитный ток эмиттированных электронов на контактные электроды и, как следствие, низкую (5-7%) эффективность, что обусловлено его конструкцией.However, this emitter has a significant parasitic current of the emitted electrons to the contact electrodes and, as a result, low (5-7%) efficiency due to its design.
Цель изобретени - повышение эффективности эмиттера.The purpose of the invention is to increase the efficiency of the emitter.
Поставленна цель достигаетс тем, что в эмиттере электронов, содержащем пластинчатое диэлектрическое основание , контактные пленочные электроды , островковую метгшлическую пленку и активатор, основание имеет щель, контактные электроды располо10 жены на противоположных сторонгис основани , а островкова пленка и активатор размещены на стенкгис щели.The goal is achieved by the fact that in the emitter of electrons containing a plate-shaped dielectric base, contact film electrodes, an islet mechshilic film and an activator, the base has a slit, the contact electrodes are located on opposite sides of the base, and the islet film and activator are placed on the wall of the slit.
При этом один из электродов может заходить в щель.In this case, one of the electrodes can go into the slot.
1515
Конструкци эмиттера допускает ослабление или устранение электрического пол , преп тствующего движению первичных электронов на коллекторы (аноды) приборов (например, диодов, 20 триодов и т.д.), в которых используетс эмиттер. Кроме того, конструкци допускает уменьшение поверхности токоприемной части контактных электродов и, как следствие, улучшение The design of the emitter allows for the weakening or elimination of the electric field, which prevents the movement of primary electrons to the collectors (anodes) of devices (for example, diodes, 20 triodes, etc.) in which the emitter is used. In addition, the design allows the surface of the current-collecting part of the contact electrodes to be reduced and, as a result, the
25 токораспределени между контактными электродами с одной стороны и коллекторами (анодами) приборов - с другой.25 current distribution between the contact electrodes on one side and the collectors (anodes) of the devices on the other.
На чертеже показан эмиттер элек30 тронов .The drawing shows the emitter of the electrons.
Эмиттер содержит части 1 пластин-чатого диэлектрического основани , контактные электроды 2 и 3, активированные островковые металлические пленки 4. Основание может быть выполнено из оконного стекла, электроды.. и островкова пленка из золота, акти ,ватором может служить окись бари . ,The emitter contains parts 1 of a plate-dielectric base, contact electrodes 2 and 3, activated island metal films 4. The base can be made of window glass, electrodes .. and an island film of gold, barium oxide can serve as an activator. ,
Эмиттер работает следук цим образом .The emitter works in the following way.
Электрод 3 подключаетс к источнику отрицательного (или нулевого;, а электроды 2 к источнику положительного потенциала. При этом островковые пленки 4 эмиттируют электроны в вакуум . Под действием сил электрического пол в щели электроны движутс в направлении зазора между электродами 2, частично оседают на торцах последних , а частично выход т из щели и могут быть использованы в электронных приборах (.диодах, триодах и т.д.) Толщина электродов 2 или их заход в щель могут быть сделаны малыми, соответственно вл етс малой и паразитна дол эмиссионного тока, оседающего на электродах 2. Моделирование устройства по чертежу на ЭВМ показывает, что эмиттированные электроды движутс в основном вдоль плоскости симметрии щели. I Предлагаемое устройство по сравнению с известным имеет малый паразитный ток электродов и, как следствие , более высокую эффективность, что облегчает создание миниатюрных экономических электронных устройств с ненакаливаемыми эмиттерами.Electrode 3 is connected to a negative (or zero;) source, and electrodes 2 to a source of positive potential. At the same time, island films 4 emit electrons into a vacuum. Under the action of an electric field in the slot, electrons move in the direction of the gap between electrodes 2, partially deposited on the ends of , and partly out of the slot and can be used in electronic devices (diodes, triodes, etc.). The thickness of the electrodes 2 or their entry into the slot can be made small, respectively, is a small and parasitic fraction of Emission current deposited on the electrodes 2. Simulation of the device according to the drawing on a computer shows that the emitted electrodes move mainly along the plane of symmetry of the slit. I The proposed device has a small parasitic current of electrodes compared to the known one and, as a result, higher efficiency, which makes it easier creation of miniature economic electronic devices with non-hot emitters.
Формуле изобретени Invention Formula
1.Эмиттер электронов, содержащий пластинчатое диэлектрическое основание , контактные пленочные электроды , островковую металлическую пленку и активатор, отличающийс тем, что, с целью повышени эффективности эмиттерг:, основание имеет щель, контактные электроды расположены на противоположных сторонах основани , а островкова пленка и активатор размещены на стенках щели.1. An electron emitter containing a plate-shaped dielectric base, contact film electrodes, an island metal film and an activator, characterized in that, in order to increase efficiency, the emitter: the base has a slit, the contact electrodes are located on opposite sides of the base, and the island film and the activator are placed on the walls of the gap.
2.Эмиттер non.i, отличающ и и с тем, что по крайней мере один из электродов заходит в щель.2. The emitter is non.i, which is also distinguished by the fact that at least one of the electrodes enters the slot.
Источники информации, прин тые во внимание при экспертизеSources of information taken into account in the examination
1.Borzjak P.Y. Mewe Erschelnungen . Phys. Stat. Sol, 1965,v.8,1.Borzjak P.Y. Mewe Erschelnungen. Phys. Stat. Sol, 1965, v.8,
№ 1, p.55-60.№ 1, p.55-60.
2.Авторское свидетельство СССР 482827, кл. Н 01 J 1/30, 1973 (прототип).2. Authors certificate of the USSR 482827, cl. H 01 J 1/30, 1973 (prototype).
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU772501095A SU855782A1 (en) | 1977-06-28 | 1977-06-28 | Electron emitter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU772501095A SU855782A1 (en) | 1977-06-28 | 1977-06-28 | Electron emitter |
Publications (1)
Publication Number | Publication Date |
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SU855782A1 true SU855782A1 (en) | 1981-08-15 |
Family
ID=20715318
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SU772501095A SU855782A1 (en) | 1977-06-28 | 1977-06-28 | Electron emitter |
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SU (1) | SU855782A1 (en) |
Cited By (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0299461A2 (en) * | 1987-07-15 | 1989-01-18 | Canon Kabushiki Kaisha | Electron-emitting device |
US4956574A (en) * | 1989-08-08 | 1990-09-11 | Motorola, Inc. | Switched anode field emission device |
US5007873A (en) * | 1990-02-09 | 1991-04-16 | Motorola, Inc. | Non-planar field emission device having an emitter formed with a substantially normal vapor deposition process |
US5019003A (en) * | 1989-09-29 | 1991-05-28 | Motorola, Inc. | Field emission device having preformed emitters |
US5030921A (en) * | 1990-02-09 | 1991-07-09 | Motorola, Inc. | Cascaded cold cathode field emission devices |
US5055077A (en) * | 1989-11-22 | 1991-10-08 | Motorola, Inc. | Cold cathode field emission device having an electrode in an encapsulating layer |
US5075595A (en) * | 1991-01-24 | 1991-12-24 | Motorola, Inc. | Field emission device with vertically integrated active control |
US5079476A (en) * | 1990-02-09 | 1992-01-07 | Motorola, Inc. | Encapsulated field emission device |
US5136764A (en) * | 1990-09-27 | 1992-08-11 | Motorola, Inc. | Method for forming a field emission device |
US5140219A (en) * | 1991-02-28 | 1992-08-18 | Motorola, Inc. | Field emission display device employing an integral planar field emission control device |
US5142184A (en) * | 1990-02-09 | 1992-08-25 | Kane Robert C | Cold cathode field emission device with integral emitter ballasting |
US5142256A (en) * | 1991-04-04 | 1992-08-25 | Motorola, Inc. | Pin diode with field emission device switch |
US5157309A (en) * | 1990-09-13 | 1992-10-20 | Motorola Inc. | Cold-cathode field emission device employing a current source means |
US5173635A (en) * | 1990-11-30 | 1992-12-22 | Motorola, Inc. | Bi-directional field emission device |
US5173634A (en) * | 1990-11-30 | 1992-12-22 | Motorola, Inc. | Current regulated field-emission device |
US5212426A (en) * | 1991-01-24 | 1993-05-18 | Motorola, Inc. | Integrally controlled field emission flat display device |
US5214347A (en) * | 1990-06-08 | 1993-05-25 | The United States Of America As Represented By The Secretary Of The Navy | Layered thin-edged field-emitter device |
US5218273A (en) * | 1991-01-25 | 1993-06-08 | Motorola, Inc. | Multi-function field emission device |
US5266155A (en) * | 1990-06-08 | 1993-11-30 | The United States Of America As Represented By The Secretary Of The Navy | Method for making a symmetrical layered thin film edge field-emitter-array |
US5281890A (en) * | 1990-10-30 | 1994-01-25 | Motorola, Inc. | Field emission device having a central anode |
US5432407A (en) * | 1990-12-26 | 1995-07-11 | Motorola, Inc. | Field emission device as charge transport switch for energy storage network |
US5465024A (en) * | 1989-09-29 | 1995-11-07 | Motorola, Inc. | Flat panel display using field emission devices |
US5661362A (en) * | 1987-07-15 | 1997-08-26 | Canon Kabushiki Kaisha | Flat panel display including electron emitting device |
USRE39633E1 (en) | 1987-07-15 | 2007-05-15 | Canon Kabushiki Kaisha | Display device with electron-emitting device with electron-emitting region insulated from electrodes |
USRE40062E1 (en) | 1987-07-15 | 2008-02-12 | Canon Kabushiki Kaisha | Display device with electron-emitting device with electron-emitting region insulated from electrodes |
USRE40566E1 (en) | 1987-07-15 | 2008-11-11 | Canon Kabushiki Kaisha | Flat panel display including electron emitting device |
-
1977
- 1977-06-28 SU SU772501095A patent/SU855782A1/en active
Cited By (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5532544A (en) * | 1987-07-15 | 1996-07-02 | Ganon Kabushiki Kaisha | Electron-emitting device with electron-emitting region insulated from electrodes |
EP0299461A3 (en) * | 1987-07-15 | 1990-01-10 | Canon Kabushiki Kaisha | Electron-emitting device |
US5872541A (en) * | 1987-07-15 | 1999-02-16 | Canon Kabushiki Kaisha | Method for displaying images with electron emitting device |
EP0299461A2 (en) * | 1987-07-15 | 1989-01-18 | Canon Kabushiki Kaisha | Electron-emitting device |
US5661362A (en) * | 1987-07-15 | 1997-08-26 | Canon Kabushiki Kaisha | Flat panel display including electron emitting device |
USRE39633E1 (en) | 1987-07-15 | 2007-05-15 | Canon Kabushiki Kaisha | Display device with electron-emitting device with electron-emitting region insulated from electrodes |
US5066883A (en) * | 1987-07-15 | 1991-11-19 | Canon Kabushiki Kaisha | Electron-emitting device with electron-emitting region insulated from electrodes |
USRE40566E1 (en) | 1987-07-15 | 2008-11-11 | Canon Kabushiki Kaisha | Flat panel display including electron emitting device |
US5749763A (en) * | 1987-07-15 | 1998-05-12 | Canon Kabushiki Kaisha | Display device with electron-emitting device with electron-emitting region insulted from electrodes |
US5759080A (en) * | 1987-07-15 | 1998-06-02 | Canon Kabushiki Kaisha | Display device with electron-emitting device with electron-emitting region insulated form electrodes |
USRE40062E1 (en) | 1987-07-15 | 2008-02-12 | Canon Kabushiki Kaisha | Display device with electron-emitting device with electron-emitting region insulated from electrodes |
US4956574A (en) * | 1989-08-08 | 1990-09-11 | Motorola, Inc. | Switched anode field emission device |
US5465024A (en) * | 1989-09-29 | 1995-11-07 | Motorola, Inc. | Flat panel display using field emission devices |
US5019003A (en) * | 1989-09-29 | 1991-05-28 | Motorola, Inc. | Field emission device having preformed emitters |
US5055077A (en) * | 1989-11-22 | 1991-10-08 | Motorola, Inc. | Cold cathode field emission device having an electrode in an encapsulating layer |
US5142184A (en) * | 1990-02-09 | 1992-08-25 | Kane Robert C | Cold cathode field emission device with integral emitter ballasting |
US5079476A (en) * | 1990-02-09 | 1992-01-07 | Motorola, Inc. | Encapsulated field emission device |
US5030921A (en) * | 1990-02-09 | 1991-07-09 | Motorola, Inc. | Cascaded cold cathode field emission devices |
US5007873A (en) * | 1990-02-09 | 1991-04-16 | Motorola, Inc. | Non-planar field emission device having an emitter formed with a substantially normal vapor deposition process |
US5214347A (en) * | 1990-06-08 | 1993-05-25 | The United States Of America As Represented By The Secretary Of The Navy | Layered thin-edged field-emitter device |
US5266155A (en) * | 1990-06-08 | 1993-11-30 | The United States Of America As Represented By The Secretary Of The Navy | Method for making a symmetrical layered thin film edge field-emitter-array |
US5157309A (en) * | 1990-09-13 | 1992-10-20 | Motorola Inc. | Cold-cathode field emission device employing a current source means |
US5136764A (en) * | 1990-09-27 | 1992-08-11 | Motorola, Inc. | Method for forming a field emission device |
US5281890A (en) * | 1990-10-30 | 1994-01-25 | Motorola, Inc. | Field emission device having a central anode |
US5173634A (en) * | 1990-11-30 | 1992-12-22 | Motorola, Inc. | Current regulated field-emission device |
US5173635A (en) * | 1990-11-30 | 1992-12-22 | Motorola, Inc. | Bi-directional field emission device |
US5432407A (en) * | 1990-12-26 | 1995-07-11 | Motorola, Inc. | Field emission device as charge transport switch for energy storage network |
US5212426A (en) * | 1991-01-24 | 1993-05-18 | Motorola, Inc. | Integrally controlled field emission flat display device |
US5075595A (en) * | 1991-01-24 | 1991-12-24 | Motorola, Inc. | Field emission device with vertically integrated active control |
US5218273A (en) * | 1991-01-25 | 1993-06-08 | Motorola, Inc. | Multi-function field emission device |
US5140219A (en) * | 1991-02-28 | 1992-08-18 | Motorola, Inc. | Field emission display device employing an integral planar field emission control device |
US5142256A (en) * | 1991-04-04 | 1992-08-25 | Motorola, Inc. | Pin diode with field emission device switch |
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