TW222715B - - Google Patents

Info

Publication number: TW222715B
Authority: TW; Taiwan

Application number

TW081104711A

Original Assignee

Sharp Kk

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1991-06-17

Filing date

1992-06-16

Publication date

1994-04-21

1992-06-16 Application filed by Sharp Kk filed Critical Sharp Kk

1994-04-21 Application granted granted Critical

1994-04-21 Publication of TW222715B publication Critical patent/TW222715B/zh

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6731—Top-gate only TFTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6732—Bottom-gate only TFTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
- H10D30/6745—Polycrystalline or microcrystalline silicon
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
- H10D30/6746—Amorphous silicon

TW081104711A 1991-06-17 1992-06-16 TW222715B (zh)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP3144914A JP2634505B2 (ja)	1991-06-17	1991-06-17	薄膜トランジスタ及びその製造方法

Publications (1)

Publication Number	Publication Date
TW222715B true TW222715B (zh)	1994-04-21

Family

ID=15373196

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW081104711A TW222715B (zh)	1991-06-17	1992-06-16

Country Status (4)

Country	Link
EP (1)	EP0519692A3 (zh)
JP (1)	JP2634505B2 (zh)
KR (1)	KR100288368B1 (zh)
TW (1)	TW222715B (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH10135475A (ja)	1996-10-31	1998-05-22	Semiconductor Energy Lab Co Ltd	半導体装置およびその作製方法
US6646287B1 (en)	1999-11-19	2003-11-11	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device with tapered gate and insulating film
US6825488B2 (en)	2000-01-26	2004-11-30	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
TWI605590B (zh)	2011-09-29	2017-11-11	半導體能源研究所股份有限公司	半導體裝置及其製造方法
JP6076626B2 (ja) *	2012-06-14	2017-02-08	株式会社ジャパンディスプレイ	表示装置及びその製造方法
JP2014038911A (ja) *	2012-08-13	2014-02-27	Sony Corp	薄膜トランジスタおよびその製造方法、並びに表示装置および電子機器

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4394182A (en) *	1981-10-14	1983-07-19	Rockwell International Corporation	Microelectronic shadow masking process for reducing punchthrough

1991
- 1991-06-17 JP JP3144914A patent/JP2634505B2/ja not_active Expired - Fee Related
1992
- 1992-06-16 TW TW081104711A patent/TW222715B/zh active
- 1992-06-17 EP EP19920305529 patent/EP0519692A3/en not_active Ceased
- 1992-06-17 KR KR1019920010701A patent/KR100288368B1/ko not_active IP Right Cessation

Also Published As

Publication number	Publication date
KR100288368B1 (ko)	2001-10-24
EP0519692A2 (en)	1992-12-23
KR930001502A (ko)	1993-01-16
EP0519692A3 (en)	1993-07-21
JP2634505B2 (ja)	1997-07-30
JPH04369229A (ja)	1992-12-22

Publication	Publication Date	Title
FR2680589B1 (zh)	1995-01-27
EP0520299A3 (zh)	1995-03-22
FR2671671B1 (zh)	1994-11-25
EP0521165A4 (zh)	1995-05-24
FR2677203B1 (zh)	1995-02-10
FR2679248B1 (zh)	1994-07-13
TW222715B (zh)	1994-04-21
DK0525857T3 (zh)	1997-02-10
FR2672228B1 (zh)	1995-02-03
FR2679046B1 (zh)	1994-12-23
EP0538805A3 (zh)	1995-05-10
JPH0499127U (zh)	1992-08-27
JPH0493951U (zh)	1992-08-14
ECSM91572U (zh)	1992-05-25
EP0510867A3 (zh)	1994-03-02
AU7128691A (zh)	1991-12-12
EP0788179A3 (zh)	1997-08-27
EP0551522A4 (zh)	1994-01-12
EP0545667A3 (zh)	1994-02-02
EP0543523A3 (zh)	1994-01-26
EP0530420A3 (zh)	1994-03-30
EP0528037A4 (zh)	1994-01-19
CN3009376S (zh)	1991-05-08
EP0511603A3 (zh)	1994-02-23
EP0497627A3 (zh)	1994-03-09