TW246745B - - Google Patents

Info

Publication number: TW246745B
Authority: TW; Taiwan

Application number

TW083103336A

Original Assignee

Hughes Aircraft Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1993-04-16

Filing date

1994-04-14

Publication date

1995-05-01

1994-04-14 Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co

1995-05-01 Application granted granted Critical

1995-05-01 Publication of TW246745B publication Critical patent/TW246745B/zh

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
- H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs

TW083103336A 1993-04-16 1994-04-14 TW246745B (zh)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US08/047,134 US5343424A (en)	1993-04-16	1993-04-16	Split-gate flash EEPROM cell and array with low voltage erasure

Publications (1)

Publication Number	Publication Date
TW246745B true TW246745B (zh)	1995-05-01

Family

ID=21947246

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW083103336A TW246745B (zh)	1993-04-16	1994-04-14

Country Status (4)

Country	Link
US (1)	US5343424A (zh)
EP (1)	EP0620600A3 (zh)
JP (1)	JPH0750350A (zh)
TW (1)	TW246745B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5397726A (en) *	1992-02-04	1995-03-14	National Semiconductor Corporation	Segment-erasable flash EPROM
US5528651A (en) *	1994-06-09	1996-06-18	Elekta Instrument Ab	Positioning device and method for radiation treatment
US5511036A (en) *	1994-12-19	1996-04-23	Hughes Aircraft Company	Flash EEPROM cell and array with bifurcated floating gates
US5844271A (en) *	1995-08-21	1998-12-01	Cypress Semiconductor Corp.	Single layer polycrystalline silicon split-gate EEPROM cell having a buried control gate
US6125060A (en) *	1998-05-05	2000-09-26	Chang; Ming-Bing	Flash EEPROM device employing polysilicon sidewall spacer as an erase gate

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4317272A (en) *	1979-10-26	1982-03-02	Texas Instruments Incorporated	High density, electrically erasable, floating gate memory cell
US4783766A (en) *	1986-05-30	1988-11-08	Seeq Technology, Inc.	Block electrically erasable EEPROM
US4998220A (en) *	1988-05-03	1991-03-05	Waferscale Integration, Inc.	EEPROM with improved erase structure
US5168465A (en) *	1988-06-08	1992-12-01	Eliyahou Harari	Highly compact EPROM and flash EEPROM devices
US4958321A (en) *	1988-09-22	1990-09-18	Advanced Micro Devices, Inc.	One transistor flash EPROM cell
US5057886A (en) *	1988-12-21	1991-10-15	Texas Instruments Incorporated	Non-volatile memory with improved coupling between gates
JPH03245575A (ja) *	1990-02-22	1991-11-01	Mitsubishi Electric Corp	半導体記憶装置及びその製造方法
US5130769A (en) *	1991-05-16	1992-07-14	Motorola, Inc.	Nonvolatile memory cell

1993
- 1993-04-16 US US08/047,134 patent/US5343424A/en not_active Expired - Fee Related
1994
- 1994-04-14 EP EP94302670A patent/EP0620600A3/en not_active Withdrawn
- 1994-04-14 TW TW083103336A patent/TW246745B/zh active
- 1994-04-15 JP JP6077635A patent/JPH0750350A/ja active Pending

Also Published As

Publication number	Publication date
EP0620600A3 (en)	1995-01-18
EP0620600A2 (en)	1994-10-19
JPH0750350A (ja)	1995-02-21
US5343424A (en)	1994-08-30

Publication	Publication Date	Title
FR09C0038I2 (zh)	2010-06-11
FR2703947B1 (zh)	1997-02-21
FR2706813B1 (zh)	1995-09-08
FR2704266B1 (zh)	1997-02-28
FR2707051B1 (zh)	1996-03-08
FR2707024B1 (zh)	1995-09-01
FR09C0007I1 (zh)	2009-04-17
EP0757573A4 (zh)	1997-03-26
FR2702922B1 (zh)	1997-02-28
EP0721427A4 (zh)	1996-08-28
FR2705586B1 (zh)	1997-02-28
FR2709800B1 (zh)	1997-02-14
EP0725461A3 (zh)	1996-09-18
EP0702629A4 (zh)	1996-05-08
FR2703789B1 (zh)	1997-02-21
FR2706165B1 (zh)	1997-03-07
EP0731958A4 (zh)	1996-10-30
IN182011B (zh)	1998-12-05
FR2701428B1 (zh)	1997-02-21
TW246745B (zh)	1995-05-01
FR2706827B1 (zh)	1995-09-01
FR2706748B1 (zh)	1995-09-01
FR2706807B1 (zh)	1995-10-06
FR2713409B1 (zh)	1997-02-07
FR2706797B1 (zh)	1995-09-15