TW508774B - Lead frame, semiconductor package having the same, method of manufacturing semiconductor package, molding plates and molding machine for manufacturing semiconductor package - Google Patents
Lead frame, semiconductor package having the same, method of manufacturing semiconductor package, molding plates and molding machine for manufacturing semiconductor package Download PDFInfo
- Publication number
- TW508774B TW508774B TW090122472A TW90122472A TW508774B TW 508774 B TW508774 B TW 508774B TW 090122472 A TW090122472 A TW 090122472A TW 90122472 A TW90122472 A TW 90122472A TW 508774 B TW508774 B TW 508774B
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- Taiwan
- Prior art keywords
- pad
- lead frame
- wire
- semiconductor package
- package
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 117
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 238000000465 moulding Methods 0.000 title claims abstract description 23
- 229910000679 solder Inorganic materials 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 37
- 239000011159 matrix material Substances 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 12
- 238000007789 sealing Methods 0.000 claims description 12
- 238000003466 welding Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 claims description 2
- 241000283690 Bos taurus Species 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 239000002689 soil Substances 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 41
- 229920003002 synthetic resin Polymers 0.000 description 14
- 239000000057 synthetic resin Substances 0.000 description 14
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 8
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 7
- 238000007747 plating Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- 241001622925 Acacia coriacea Species 0.000 description 1
- 241001494479 Pecora Species 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
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- H01L23/495—Lead-frames or other flat leads
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
皇號 9012247? 五、發明說明(1) <發明之背景> 本發明係有關一種導, β 封裝之合成樹脂塑模時;^特別疋有關—種當半導體 有該導線架之半導體封# 、生閃弧現象之導線架,具 模塑機與方法者。、、以及製造半導體封裝之模板、 <先前技藝之描述> 一般來說,半導+ f 1 之封裝之構造’係於導線牟夕媒執 塑模而形成封體。’再將銲^㈣導線架以合成樹脂 f來’半導體封裝之容量變得越來越大,目時 ,,. , 個例子,就是研發出晶片規模封裝 面有導線伸出,而在晶片規封裝,其侧 接 線突出於半導體封裝之下表*,半 縮小。為了使半導體封“因ΐ封裝所佔用之空間亦 ^^ 亍守瓶釕裝下表面之導線外露出來,導線必 ^向下放置(d〇wn-set)或呈半蝕刻(half etched)之狀 悲。外露出來之導線會與印刷電路板(printed circuit board)上之接線端子接觸。在某些特別情況下,會安排將 半導體晶片之銲塾外露於封裝之下表面上。 第1圖係習見之半導體封裝之剖面示意圖,係發表於 曰本專利公報(Japanese Patent PubHcati〇n)第 59-21047號。如圖中所示,一個半導體晶片14被固定於銲
第5頁 年月日 修正 -iS^9〇i22472 五、發明說明(2) 塾1 1之卜矣; 底 衣由’導線1 2則以向下之方式放置著。導線1 2之 拉L表面1 2a外露於封體1 5之下表面上,因此導線1 2能夠 钱觸到印屈,I f Μ π w 电路板上之一個連結端子(圖未示)。導線1 2之 了貝以及丰導^ ^ - 守耀晶片1 4之電極(圖未示)之間以接線1 3連 接。銲藝Π # sa 示 、/ u藏置之位置,係低於導線1 2之頂端。第1圖所 半導體封數,其中之導線12乃向下放置,係為半導體 封裝之典型例子。 、第2圖所示乃習見之半導體封裝之另一實施例,其發 表於日本專利公報(Japanese Patent Pub 1 i cat ion)第 59-227143说。如圖中所示,半導體晶片24裝嵌於銲墊21 上導線Μ係經過半餘刻法(haif-etching method)處理 過’致使其下表面22a外露於封體25之下表面上。導線22 之其中一端以及半導體晶片22a之電極之間以接線23連 接。第2圖所示之半導體封裝,其中之導線22係呈半蝕刻 狀態。其亦為半導體封裝之典型例子。 第3圖亦是習見之半導體封裝之另一實施例,其發表 於美國專利(U.S· Pa tent)第6,143,981號。如圖中所 示,半導體晶片34係裝嵌於銲墊31之上表面。從封體35之 下表面可外露出銲墊31之下表面以及導線32之下表面 32a,亦即,銲墊31及導線32係形成於同一高度上。導線 3 2及晶片3 4之電極之間以接線3 3連接。外露出來之導線3 2 與印刷電路板上之接線端子接觸。籍著外露之銲墊Μ之下 表面將半導體晶片34所產生之熱能散發到外面。而銲墊3 i 係與印刷電路板上之熱墊(thermal pad,圖未示)連接。
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案號 90122472 五、發明說明(3) 第3圖所示之半導體封裴,其中之銲墊31為外露,亦為半 導體封裝之典型例子。 應用於生產如第3圖所示之半導體封裝之組裝過程, 習見之方法有兩種。第一種方法,如第4圖所示,其中之 導線架單元包括一個獨立的導線架41,以及包圍於導線羊 外面之圍欄42。導線架單元會經過晶元鑛切二圍fe;導線木 sawing)、裝上晶粒(die attach)、接線(wire bonding)、塑模/消減閃孤(molding / deflashing)、打 記號(marking)、修整/成型(trimming / forming)。把導 線架個別地修整可相對地減少塑模時產生之閃弧。然而, 徹底地防止閃弧之產生是不可能的,因此切實地需要另一 個附加步驟以消除閃弧。 在第二種方法中,每個導線架並不是個別地修整,但 是每個包含以矩陣方式排列形成之多數個導線架單元,乃 同時一起進行塑模。第5圖所示為呈矩陣式之導線架單 元,圖中顯示出多數個各自分開之導線架5 1,以及圍繞導 線架5 1外圍之圍欄5 2。產生具有矩陣式之導線架單元須經 過以下過程:晶片鋸切(wafer sawing)、裝上晶粒(die attach)、接線(wire bonding)、塑模 / 消減閃弧(m〇iding / deflashing)、打記號(marking),然後鋸開成一個一個 的導線架。 上述兩種半導體封裝之組裝過程,其中經過個別修整 之導線架,其在單位面積内之單位密度較小,這是由於個 別整修之導線架之單位面積大於矩陣式導線架之單位面
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積,因此每一單位 矩陣式之導線架組 體’其銲墊外露於 產生較多之閃弧, 用0 面積之成本亦較高。 裝方法比較常用。然 封裝下表面之矩陣式 所以此矩陣式導線架 為了改進此缺點, 而,當一個半導 導線架,塑模時會 組裝法亦不可能適 fe圖所示為半導體封裝之塑模 :之塑模過程-樣。請參考該圖,半導體封裝/形成導上 1一二:層板61以及一個下層板62之模== 中以拯綠2上層板61及下層板62之間存在有一空間,當 滿此ίΐ it之導線架。從閘門63注入合成樹脂“填 =嵌於鲜塾65上。半導體晶片66上之電極 間以接線68連接。第5圖所示為矩陣式導線架未被切開 個別導線架之情形。 如第6圖所示,當要利用模板進行塑模壓縮時,銲墊 65之下表面、導線67以及下層板62之内表面會產生塑模閃 弧。這是由於導線架單元於模板裡之溫度升高而使導線架 受熱膨脹’而致使扭曲,再加上由於上層板只夾緊導^ 架單元之邊緣,而其除了邊緣之中央部位由於並沒有被爽 緊而向上突起,塑模之合成樹脂會於導線與銲墊之下侵入 此處,閃弧因此產生。 為了避免塑模時之閃弧現象,引進了一種利用背面膠 帶(rear side tape)之方式,那就是利用一種熱阻帶,例 如聚醯亞胺(Polyimide)或鐵氟龍(Teflon)所製成之薄片
观774 案號 90122472 五、發明說明(5)
層壓在導線架之背面。由於聚 (adhesive layer),聚醯亞胺 貼,因此避免了閃弧之產生。 必須使用特殊之膠帶用料,涉 成本必然提高,且附加之操作 本金額推高。再者,當移除該 導線架之表面上,造成其接合 除’必須再進行一種化學程序 <發明之總論> 醯亞胺帶上具有一層膠黏劑 帶會與下層板之内表面緊 然而,利用背面膠帶之方法 及到特殊之商品公司等,其 步驟亦隨之而來,把投資成 類膠帶時,膠黏劑會殘留於 度降低。而為了把膠黏劑移 為了解決上述問題,本發明之目的係在提供一種經 改良之導線架,使之避免產生閃弧現象(flash 、 phenomenon)之情开> ° 本發明之另一目的係在提供一種半導體封裝, 閃弧現象及邊界表面分離現象(b〇undary surface separation phenomenon )之發生 〇 本發明之再一目的係在提供一種製造半導體封 板、模塑機與方法,其可防止閃弧現象及邊界、 象之發生。 囬刀離現 本發明之又一目的係在提供一種半導體封裝,其中之 步驟係集合了以往習見之半導體封裝之組裝步驟、所需 之導線架、以及一種經過改良之製造方法。 為了達到以上各目的,本發明提供了一種配合 封裝之導線架,其中之導線架包括一個銲墊、一個由 個導線組成之支撐部件(support portion)、一個支撐銲
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-案说 五、發明說明(6) 塾之帶條(tie 端與銲墊連接 processed) a夺 成型後兩者之 本發明中 上。 本發明中 為半敍刻,而 本發明中較佳 銲墊係配置於 為了達到 包括銲墊、多 從銲墊廷伸出 配置於不同之 以及導線之接 外露於封體其 夕卜一面0 本發明中 銲墊之高度, 本發明中較佳 面上,所述之 本發明中 附之一面為銲 銲墊上表面; bar) ! :其中 ,支撐 間的局 較佳的 較佳的 半蝕刻 的是, 與導線 以上之 數個導 來的、 平面上 線 以及一 中一個 較佳的 係小於 的是, 銲墊為 較佳的 墊下表 而本發 帶條之一端與支撐部件連接,另一 立^ f條向下放置(down - set #件至銲墊之間之高度,係大於封體 度。 疋,銲墊係配置於與導線不同之平面 是,每一個導線上,至少有一個部位 之部位係電性連接到半導體晶片上。 銲墊係容納於模板内部空間,所述之 不同之平面上。 目的,本發明提供一個半導體封裝, 線、連接到鲜塾表.面之半導體晶片、 向下放置的帶條,致使銲墊及導線係 條連接線將半導體晶片上之電極 封體,其中之銲墊之另外一面係 表面上,如此使導線外露於封體之另 是,當封體成型以後,其中之導線至 帶條向下放置時導線至銲墊之高度。 其中之麵·塾係配置於與導線之^同平 容納於模板内部空間中。 是,其中之銲墊上,半導體晶片所依 面,另一面外露於封體表面之一面為 明中之半導體封體上,外露出銲墊之
第10頁 508774 _案號90122472_年月日 修正_ 五、發明說明(7) 一面為封體上表面,另一側有導線外露之一面為封體下表 面。 本發明中較佳的是,,其中之銲墊上,與半導體晶片 接觸之一面為銲墊上表面,另一面外露於封體表面之一面 為銲墊下表面;而本發明中之半導體封體上,其中外露出 銲墊之一面為封體下表面,另一側有導線外露之一面為封 體上表面。 本發明中較佳的是,每一個導線上至少有一個部位為 以半蝕刻形成,而半蝕刻之部位係電性連接至半導體晶片 上。 為了達到以上之目的,本發明提供一種半導體封裝之 製造方法,主要包括:導線架之準備步驟,該導線架包括 一個銲墊、多數個之導線、從銲墊伸出並支撐銲墊之帶 條,以及向下放置(down-set processed)之帶條使銲墊及 導線各配置於不同的平面上之步驟;其中,將帶條向下放 置後,支撐部件至銲墊之間之高度,係大於塑模封裝時模 板内空間之厚度。 本發明之方法中較佳的是,導線架準備步驟中,每個 導線上至少有一個部位為半蝕刻,而半蝕刻之部位係電性 連接至半導體晶片上。 本發明中之半導體封裝之製造方法中較佳的是,帶條 向下放置過程之後,接著進行之步驟包括:將半導體晶片 依附在銲墊之表面上,以接線連結半導體晶片上之電極及 導線,將塑模合成樹脂注入壓著銲墊之模板中,調整導線
508774 t號 90122479 五、發明說明(8) 架、使半導體晶片依附於模板上,因 除與導線連接q n 彳#體再切 之下m之方法中較佳的是,+導體晶片係依附於銲墊 之下表面或上表面。 同之中較佳的銲墊與導線所各配置於不 同之+面上’並且放置於模板内之空間中。 ^發明之方法中較佳的是,導線架之準備步驟中, 數個導線架以矩陣之形式連結組成導線架單元。 ,發明之方法中較佳的是,導線架之準備步驟中, 線架係經過個別地塑模及修整。 為了達到以上之目的,本發明乃提供了一種用以Μ 包封料導,封裝之模板,此模板包括: 一用以容納一導線架的内空間,該導線架包括一銲 墊、一多數個導線以及一彈性帶條而向下放置著,如 導線乃設置於不同平面而以一預定距離分開,而一半 上;其中模板…間可使得在導 P1 : w雜;内t間 ,在銲墊之表面與導線底部表面之 支樓部件與導線底部表面之間的距二子知塾的表面與 ^了達到以上之目#’本發明乃提供了一 板,此模板包括: ^包封的半導體封裝之模 一用以容納一導線架的内办 墊、一多數個導線以及一彈性=3 ,該導線架包括一銲
墊與導線乃設置於不同平面:條而向下放置著,如此銲 一 —____ 乂一預定距離分開,而一 ^ 508774 --- 案號90122472_年月 日 修& 五、發明說明(9) 導體晶片則附貼在銲墊上;其中模板之内空間可使得在導 線架放置於内空間之前,在銲墊之表面與導線底部表面之 間的距離大於藉由模板形成包封的封裝時,銲墊的表面與 支撐部件與導線底部表面之間的距離者。 至於本發明之詳細構造、應用原理、作用與功效,則 參照下列依附圖所作之說明即可得到完全的了解。 <較佳具體實施例之詳細描述> 第7圖所示為本發明之半導體封裝之較佳實施例示 圖’ 一半導體晶片74乃依附在銲塾71之下表面。一導線72 與銲墊71所處之高度不同。先將銲墊71及導線72進行半蝕 刻及鍍上貴金屬如銀或纪。以接線7 5將導線7 2及半導體晶 片74連結起來。銲墊71、導線72及半導體晶片?4之周圍以 封體76包裹。一帶條(圖未示)以其一端連接銲墊71之邊 緣,另一端伸出至與導線72相同之高度。該帶條係向下放 置,並將於稍後作詳細描述。 在第7圖所示之半導體封裝中,銲墊?!之上表面係外 露於封體76之上表面,導線72之下表面係外露於封體76之 下表面。導線72之下表面與印刷電路板上之連結端子連 接,形成電路連通。外露之銲墊71之上表面有助於半導體 晶片7 4散熱到外界。 第8圖所示為用於第7圖所示之半導體封裝中之導線 架。第9圖係第8圖所示之導線架之平面圖。如圖所示,一 帶條81從銲墊71之邊緣延伸出來,多數個之導螅7 蟢荽 銲塾71。如上所述,銲塾71及導線72各配置者 度。這是由於帶條81支撐著銲墊71,使其組裝在高於導線
508774 案號 90122479 五、發明說明(10) 7署平Γ i二ΐ就是說只要帶條81以-特定距離向下放 者Ρσ鋅墊71及導線72保持於不同之平面上。連接 部件81a將帶條81與導線72連結,並支撐銲墊71於不同之 平面上。連接部件81b與導線72則處於同一平面上。帶條 8 1及導線7 2之間籍著支撐部件μ連結。 如第8圖及第9圖中,上述多數個之導線架連接起來並 排列成矩陣之形式,如此形成了 一個如第5圖所示之導線 架單元。而實際上,在進行向下放置的程序之前,籍著推 擠、蝕刻或衝壓,使銲墊71、導線72及帶條81被形成。向 下放置之程序乃籍一模具進行,如此帶條81就如第8圖所 示的支撐著銲墊71。連接著導線72的支撐部件83,當塑模 完成以後可以被去除掉。 以下將會詳述本發明之半導體封裝之製造方法。 本發明中’用於半導體封裝之導線架可以用典型的方 法製造出來。亦即,銲墊、導線及帶條皆由蝕刻或衝壓所 形成,且導線或銲墊中至少有一個向外接續之部位鍍上銀 (silver)或鍍上iG(palladium)。鍍銀或鍍鈀之厚度需視 乎產品之用途而有所不同。近來,進行ppF電鍍時常使用 鎳/ l£(nickel / palladium)作為材料。當導線架生產出 來以後,利用機械之方法進行向下放置之程序。此即是, 如第8圖所示,帶條8 1係呈塑性變形,能夠支撐導線,與 銲墊71於不同之平面上。 弟10A圖至苐10E圖顯示出本發明之晶片規模封裝之製 造方法。在第10A圖中’首先將導線架之材料半餘刻,導 線7 2上被半餘刻之部位形成底部7 3,外露於封裝之封體7 6
508774 ---案號 90122472 _生月 日 修正 五、發明說明(11) '~^— 之下表面。而且,銲墊7 1亦被沿著端面π a半蝕刻,以碟 保封體上之合成樹脂與銲墊於稍後之塑模過程令會黏合在 一起。 σ 如第9圖所描述,銲墊7 1與導線72之間以帶條8丨與支 撐部件8 3連接,完成了半蝕刻之過程。 、 如第1 0Β圖所示,電鍍層1 〇1及1 〇4分別在銲墊71與導 線7 2上形成。電鍍之材料為鎳、鈀或銀。 如第10C圖所示,導線72係向下放置,若銲墊71向上 放置亦可達到相同效果。帶條8丨上之向下放置之部位8 1 a 係使用塑模使之彎曲,就如第9圖所示。因此銲墊7丨及導 線72籍著此種向下放置或向上放置之方式,達到配置於不 同之平面上。 如第10D圖所示,半導體晶片74係依附於銲墊71之下 表面,然後進行接續步驟,以接線將半導體晶片74上之電 極與導線7 2連接起來。接地線1 〇 5直接與銲墊7 1電性連 接,並透過上述之帶條可使連接部件8丨為接地端子。 如第10E圖所示,籍著將半導體晶片74、銲墊71及接 線7 5塑模而形成封體7 6。如上所述,導線7 2上之底部7 3亦 被塑模成外露於封體76之下表面。銲墊71之上表面可形成 於接近或外露於封體76外。當一吸熱部件(Heat sink,圖 未示)依附於銲墊71上,半導體晶片74所產生的熱能可以 籍此散發到外界。 μ 第11圖中所示為如上所述之半導體封裝之下表面,其 製造方法就如上所述。圖中可見封裝之下表面周圍,有多 數個之導線7 2排列成矩形。帶條上之連接部件$ 1 b分佈於
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案號 90122472 五、發明說明(12) 四個角落,其作用就如接地端。如上所述, 與銲墊71之間籍著帶條81連結,其中 遷接邛件8115 整,因此可達到所預期之接地功ί!之帶條81並未經過修 —本發明中之帶條81,其向下放置之方式 有著重要的意義。:fen第6圖所述,在模板内,導線架订’ 空間,裝嵌有半導體晶片。模板内空間 .f 導線架單元於向下放置後之高度為t2,於向UU; f 11係小於t2〇也就是說,向下放置後整個 ==模=間之厚度…,當進行= 、 上層板、下層板互相夾緊,如第8圖中之銲塾71之 ’而帶條81上連結部件 γ ^表面係被下層板之内表面擠壓。同樣地,籍著支 撐部件83與帶條81上之連結部件81b 面,被下層板之内表面所擠壓。 的導線72之下表 中所^圖92121圖令顯示出模板擠壓導線架之情形。圖 中=ilV 架沿Α_Α線之剖視圖。如第…圖 緊,Ιφ敕/ U1及下層板U2並未被夾子(圖未示)夾 、其中整個向下放置之導線架高度為t2。 -夾:ί!:皮放置於上層板111及下層板112之間,並受到 开力Ρ’如第12Β圖所示。由於導線架係會塑性變 "t層板U1及下層板112之間的空間,如第12Β圖所 部件其,度會變為+tl。銲塾71之上表面及帶條“上之連接 面,而^分別籍者擠壓上層板U1及下層板112之内表 之導繞I到支撐。同樣地,籍著支撐部件83與帶條81連接 為72之下表面,受到下層板112之擠壓而得到支撐。 508774
_ 案號 90122472 五、發明說明(13) m:兄下,t合成樹脂塑模時’合成樹脂會流過導線72 及下層板112之間,亦會流過銲墊71及上層板1U之間,因 此可避免閃弧現象。 ,13圖所示為塑模之過程,其中,具有一半導體晶片 ;其上之矩陣式導線架皁疋乃被裝嵌於模板中。圖中可見 曰曰片74上之導線架’係形成於包括上層板ln及下 ,板112之模皮内的空間中。導線架上之銲墊71由於受到 j力而與下層板112之内表面接觸。通過模板上之閘門 :於:模之合成樹脂注入’此為塑模過程。塑模過程完 ,後,再經過消減閃弧、打記號,並把帶條移走。最後, 刀斷塑模合成樹脂,—個單獨的半導體封裝就此成型。 第14A圖及第14B圖所示為本發明之半導 =:另-較佳實施例。於此半導體封裝t 路於半導體封裝之下表面。所以此半導體封裝與 圖所示之半導體封裝具有相同之剖面。 第14A圖中,模板12U&121b並未被加壓,在此情況 $署裝嵌有半導體晶片127上之銲墊122係向下放置,其所 置,位置比導線123低。也就是’當導線架向下放置 線1’25鲜。墊122配置之高度係低於導線123。圖中亦可見到接 第14B圖所示,當模板1213及1211)被夾緊時,塑模合 =樹脂126被注入之情形。導線架置於模板12ia&i2ib之 i至丨ί!!一 t持壓力p作用。當模板被夾緊時,銲墊122因 =到壓力而與下層板121a接觸,因此可避免閃弧現象之產 508774 一年 1 曰 修正 案號 90122472 五、發明說明(14) *---- 、實際上,第14A圖及第14β圖所示之半導體封裝之製造 方法,最好應用於個別塑模出導線架之情況下。因此, 14A圖及第14B圖所示之方法,最好應用於生產如第4圖中 所示之導線架單元,而不是如第5圖中所示之向下放置的 矩陣式導線架單元。然而,第5圖中之導線架其生產成本 比第4圖之導線架低,而第5圖中之導線架之生產程序比 第4圖之導線架優良。 第15圖所示為第14A圖及第^圖之半導體封裝之製造 方法。圖中所示之帶條137從裝嵌著半導體晶片127上之銲 墊138中延伸出來。帶條137及導線123之間以支撐部件139 連接。連結部139及導線123係外露於同一平面上,而銲墊 1 3 8係向下放置,且其配置高度與連結部件丨3 g及導線1 2 3 不同。為了描述之便,在此處之接線並未顯示出來。當模 板之上層板121b覆蓋於下層板121a上時,用以組成一内部 空間之上層板1 2 1 b之外部1 3 2夾著導線1 2 3及支撐部件 139。在此處,由於銲墊138係向下放置,其配置位置低於 導線123及支撐部件139所在之平面,當導線123及支撑部 件139被夾緊時,銲墊138之下表面因為受到壓力而與下層 板1 2 1 a之上表面接觸。因此,當把塑模合成樹脂注入模板 間之空間時,可避免在銲墊138之下表面及下層板12la之 上表面中間產生閃弧現象。 如上所述,本發明之導線架中,由於銲墊及從銲墊延 伸出來之帶條係呈向下放置或向上放置之形態,且分別放 置於不同之平面上,因此可避免在封體成型過程時於模板 中產生之閃弧現象。所以,利用矩陣式之導線架單元於半
第18頁 508774 _案號90122472_年月日 修正_ 五、發明說明(15) 導體封裝之製造方法中,並不會受到閃弧現象所影響。再 者,所生產之半導體封裝之可靠度亦有所提升。此外,更 達到了高產量、低成本之效果。而該等功效確實可以改進 習見者之弊,而具並未見諸公開使用,合於專利法之規 定,懇請賜予專利,實為德便。 需陳明者,以上所述者乃是本發明較佳具體的實施 例,若依本發明之構想所作之改變,其產生之功能作用, 仍未超出說明書與圖示所涵蓋之精神時,均應在本創作之 範圖内,合予陳明。
第19頁 508774 _案號90122472_年月曰 修正_ 圖式簡單說明 第1圖為習見半導體封裝之剖面圖; 第2圖為另一習見半導體封裝之剖面圖; 第3圖為另一習見半導體封裝之剖面圖; 第4圖為一條形導線架單元之平面圖,其所顯示為於 合成樹脂塑模後,再經過個別修整之後之情形; 第5圖為一條形矩陣式導線架單元之平面圖; 第6圖為習見之半導體封裝塑模方法之剖面圖,其中 所應用為矩陣式導線架單元; 第7圖為本發明之半導體封裝之較佳實施例之剖面 圖; 第8圖為本發明之導線架示意圖,用於組成第7圖中所 示之半導體封裝; 第9圖為第8圖中所示之導線架之平面圖; 第10A圖、第10B圖、第10C圖、第10D圖及第10E圖為 本發明之半導體封裝之製造方法之示意圖; 第11圖為本發明之完整半導體封裝之底視圖; 第12A圖及12B圖為本發明之剖視圖,闡明導線架在模 板中被加壓之情形; 第1 3圖為本發明之剖視圖,闡明矩陣式導線架單元之 塑模過程,其中之半導體晶片係裝嵌於模板上; 第14A及14B圖為本發明之另一較佳實施例之剖視圖, 所顯示為半導體封裝之製造方法; 第1 5圖為本發明之構造分解示意圖,所顯示為第1 4 A 圖及14B圖中之半導體封裝之製造方法。
508774 _案號90122472_年月日 修正 圖式簡單說明 <圖式中元件名稱與符號對照> 11 : 録 墊 12 導 線 12a :導線下表面 13 接 線 14 半 導體晶片 15 封 體 21 底 墊 22 導 線 22a :導線下表面 23 接 線 24 半 導體晶片 25 封 體 31 底 墊 32 導 線 32a :導線下表面 33 •接 線 34 :半 導體晶片 35 :封 體 41 :導 線架 42 ••圍 攔 51 :底 墊 52 :導 線架圍棚
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508774 _案號90122472_年月日 修正 圖式簡單說明 61 ·· 上層板 6 2 ·· 下層板 63 : 閘門 64 : 合成樹脂 65 : 底墊 66 : 半導體晶片 67 : 導線 68 : 接線 71銲墊 71a :端面 72 導線 73 底部 74 半導體晶片 75 接線 76 封體 81 帶條 81a :連接部件 81b :連接部件 83 :支撐部件 101 :電鍍層 104 ::電鍍層 105 I :接地線 111 :上層板 112 ::下層板
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508774 _案號90122472_年月日 修正 圖式簡單說明 115 :閘門 1 2 1 a :模板(下) 1 2 1 b :模板(上)
1 2 2 :銲墊 1 2 3 :導線 1 2 5 :接線 1 2 6 :塑模合成樹脂 1 2 7 :半導體晶片 1 3 2 :極板外部 1 3 7 :帶條 1 3 8 :銲墊 I 3 9 :支撐部件 II :模板内之空間之厚度 t2:導線架單元於向下放置後之高度 P ·爽持壓力
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Claims (1)
- 508774 _案號90122472_年月日 修正_ 六、申請專利範圍 1. 一種用於半導體封裝之導線架,包括: 一銲墊; 一多數個為支撐部件所連接之導線;以及 一帶條,用以支撐銲墊,帶條之一端係與支撐部件連 接,另一端係與銲墊連接; 其待徵在於: 當帶條為向下放置時從導線至銲墊之間的高度, 大於當封體成型後從支撐部件至銲墊之間的高度。 2. 如申請專利範圍第1項所述之導線架,其中之銲墊 所配置之平面,係不同於導線所配置之平面者。 3. 如申請專利範圍第1項所述之導線架,其中每個導 線上至少有一個部位係以半蝕刻之方式形成,此導線上半 蝕刻之部位係電性連接到半導體晶片上者。 4. 如申請專利範圍第2項所述之導線架,其中之銲墊 所配置之平面,係不同於放置在模板内空間中之導線所配 置之平面者。 5. —種半導體封裝,包括: 一銲墊; 多數個導線;一半導體晶片,其與銲墊之一個表面接觸; 一帶條,從銲墊延伸出來,呈向下放置,因此造成銲 墊與導線配置於不同之平面上; 一接線,連接半導體晶片上之電極與導線;以及 一封體,其中銲墊之一面外露於此封裝上之其中一個第24頁 A_Ά 修正 曰 ^ om 99^70^ 六、申請專利範圍 表面’導線則外露於此封體之另外一面。 封士如申請專利範圍第5項所述之半導體封裝# 下=成型以後,從導線至銲塾之間的高裝’其中當 下放置後從導線至銲墊之間的高度者。 於μ帶條向 銲塾7所範Γ5項所述之半導體封裝,其中之 所配置之=:係、不同於放置在模板内空間中:導之線 8·如申請專利範圍第5項所述之半導體 二上有半導體晶片依附之録墊表面為銲塾之下裝,其中, 面:卜露於封體表面之—面為銲墊之上表面;另外 卜路之封體表面為封體之上表面,另外一 其上有銲 的一面為封體之下表面者。 有導線外露 9. 如申明專利範圍第5項所述之半導體 上有半導體晶片依附之銲墊表面為銲墊 ,其中, I面外露於封體表面之—面為銲墊之下表上表面,另外 ^外露之封體表面為封體之下表面,另外一面上有銲 的一面為封體之上表面者。 面有導線外露 10. 如申請專利範圍第5項所述之半 =線上至少有-個部位係以半㈣之方式开2 ’其中每 上半#刻之部位係電性連接到半導體晶片’此導線 11. 一種半導體封裝之製造 驟: 王要包括以下步 y準備一導線架,包括··一銲墊、多數個 從銲墊延伸出來作支撐銲墊用之帶條;以及線、以及-第25頁 508774 — 案说 90122472 _年 月_日修正 六、申請專利範圍 將帶條向下放置,從而使銲墊及導線位於不同之平面 上; 其中 ▲帶條向下放置後,代不導土矸3ET〜同反,你 大於封體成型時模板内空間之厚度。 方、、12 ·如申請專利範圍第1 1項所述之半導體封裝之製造 有^ 中’在準備導線架之步驟中,每一個導線上至少 位仫^ ^卩位係以半Μ刻之方式形成’此導線上半触刻之部 係&性連接到半導體晶片上者。 方法3 ·居如申請專利範圍第1 1項所述之半導體封裝之製造 4敕^將帶條向下放置以後,接著包括以下過程: 2 =導體晶片依附在銲墊之一個表面上; 將错線將半導體晶片上之電極與導線連接起來; 納貼附著ϊ ΐ i ΐ脂注人模中形成封體,此模包含藉由收 之模板,i體晶片於模板中之導線架而使銲墊受到壓力 奴如此形成封體;以及 切斷與導線連接之部份。 方、、/5·如申請專利:圍/;3依項 万去,其中之半導體曰項所迷之牛導體封裝之製造 如申請專利二片:依附於銲塾之上表面中者。 方法,其中之r執佐第11項所述之半導體封裝之製、生 導線所配置之^面者配置於不同於放置在模板内空間中^ 申π月專利㈣16項所述之半導體封I之製生 508774 — _案说 90122479 年 貝 曰 _修正 __ 六、 申請專利範圍 方法,其中在準備導線架步驟中,多數個之導線架以矩陣 式棑列,並連接成為導線架單元者。 1 8·如申請專利範圍第1 6項所述之半導體封裝之製造 方法’其中在準備導線架步驟中,導線架係個別地塑模而 成,並經過個別地修整者。 1 9 · 一種用以製造包封的半導體封裝之模板,此模板 包括= 用μ答納 塾、一 墊與導 導體晶 線架放 間的距 支撐部 20 封的半 墊、_ 墊與導 導體晶 線架放 間的距 支撐部 等綠架的内空同 ^ 多數個導線以及一彈性帶條而向 線乃設置於不同平面而以一預定 片則附貼在銲墊上;其中模板之 置於内空間之前,在銲墊之表面 離大於藉由模板形成包封的封裝 件與導線底部表面之間的距離者 •、一種製造半導體封裝之模塑機 導體封裝之模板,此模板包括: ,以容納_導線架的内空間,該 f數個導線以及一彈性帶條而向 、'泉乃設置於不同平面而以_預定 ^則附貼在銲墊上;其中模板之 於内空間之前,在銲墊之 t大於藉由模板形成包封^ 件與導線底部…間的距离匕 導線架包括一録 下放置著,如此銲 距離分開,而一半 内空間可使得在導 與導線底部表面之 時,銲墊的表面與 〇 具有用以製造包 導線架包括一銲 下放置者’如此銲 距離分開,而—半 内空間可使得在導 與導線底部表面之 時’銲墊的表面鱼第27頁
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KR1020000054200A KR20020021476A (ko) | 2000-09-15 | 2000-09-15 | 칩 스케일 반도체 팩키지 및, 그것의 제조 방법 |
KR1020010042344A KR20030006532A (ko) | 2001-07-13 | 2001-07-13 | 리이드 프레임, 그것을 구비한 반도체 팩키지, 반도체 팩키지 제조 방법, 반도체 팩키지 제조용 몰딩 플레이트 및, 몰딩 장치 |
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JP (1) | JP2002134676A (zh) |
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SG102638A1 (en) | 2004-03-26 |
US20020037604A1 (en) | 2002-03-28 |
JP2002134676A (ja) | 2002-05-10 |
CN1344024A (zh) | 2002-04-10 |
CN1210793C (zh) | 2005-07-13 |
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