TWI856355B - Light emitting diode package structure, manufacturing method of light emitting diode package structure and light emitting panel - Google Patents

Abstract

A light emitting diode package structure includes a first insulating layer, a first conductive pattern, a second insulating layer, a second conductive pattern, a light-emitting diode element and a solder. The first conductive pattern has a first portion and a second portion, the first portion fills in a through hole of the first insulating layer, and the second portion is disposed on the first insulating layer and connected to the first portion. The second insulating layer is disposed on the first insulating layer and covers the first conductive pattern. The second portion of the first conductive pattern is sandwiched between the first insulating layer and the second insulating layer. The second conductive pattern is disposed on the second insulating layer and is electrically connected to the first conductive pattern. The light emitting diode element is bonded to the second conductive pattern. The Solder is disposed on the first portion of the first conductive pattern. In addition, a method for manufacturing the light emitting diode package structure and a light emitting panel including the light emitting diode package structure are also provided.

Description

Light-emitting diode packaging structure, manufacturing method of light-emitting diode packaging structure and light-emitting panel

The present invention relates to a light-emitting diode packaging structure, a manufacturing method of the light-emitting diode packaging structure and a light-emitting panel.

The LED display panel includes a driving backplane and multiple LED elements transferred to the driving backplane. Inheriting the characteristics of LEDs, LED display panels have advantages such as power saving, high efficiency, high brightness and fast response time. In addition, compared with organic LED display panels, LED display panels also have advantages such as easy color adjustment, long luminous life and no image burn-in. Therefore, LED display panels are regarded as the next generation of display technology.

In the process of manufacturing LED display panels, multiple LED components need to be transferred to the driver backplane. In order to improve the transfer yield, multiple LED components can be packaged into an LED package structure first, and then the LED package structure is transferred to the driver backplane. In the process of manufacturing the LED package structure, solder needs to be formed on the conductive pattern inside the LED package structure to facilitate the bonding of the LED package structure with the driver backplane. However, generally speaking, solder is formed by a chemical plating process, and in the chemical plating process, internal stress of the film acts on the conductive pattern of the LED package structure, making it easy for the conductive pattern to peel off from the inside of the LED package structure, thereby affecting the manufacturing yield of the LED package structure.

The present invention provides a method for manufacturing a light-emitting diode package structure, which can improve the manufacturing yield of the light-emitting diode package structure.

The present invention provides a light emitting diode packaging structure with high manufacturing yield.

The present invention provides a light-emitting panel with high manufacturing yield.

The manufacturing method of the light-emitting diode package structure of the present invention comprises the following steps: forming a release layer on a substrate; forming a first insulating layer on the release layer, wherein the first insulating layer has a through hole; forming a first conductive pattern on the first insulating layer, wherein a first portion of the first conductive pattern is filled into the through hole of the first insulating layer, and a second portion of the first conductive pattern is disposed on the first insulating layer and connected to the first portion; forming a second insulating layer on the first insulating layer to cover the first conductive pattern; A conductive pattern, wherein the second portion of the first conductive pattern is sandwiched between the first insulating layer and the second insulating layer; forming a second conductive pattern on the second insulating layer, wherein the second conductive pattern is electrically connected to the first conductive pattern; bonding a light-emitting diode element to the second conductive pattern; separating the release layer from the first insulating layer and exposing the first portion of the first conductive pattern filled in the through hole of the first insulating layer; and forming solder on the first portion of the first conductive pattern.

The light-emitting diode package structure of the present invention includes a first insulating layer, a first conductive pattern, a second insulating layer, a second conductive pattern, a light-emitting diode element and solder. The first insulating layer has a through hole. The first conductive pattern has a first part and a second part, the first part fills the through hole of the first insulating layer, and the second part is arranged on the first insulating layer and connected to the first part. The second insulating layer is arranged on the first insulating layer and covers the first conductive pattern. The second part of the first conductive pattern is sandwiched between the first insulating layer and the second insulating layer. The second conductive pattern is arranged on the second insulating layer and electrically connected to the first conductive pattern. The light-emitting diode element is connected to the second conductive pattern. The solder is arranged on the first part of the first conductive pattern. The solder and the second conductive pattern are respectively located on two opposite sides of the first conductive pattern.

The light-emitting panel of the present invention comprises the above-mentioned light-emitting diode packaging structure and a driving back plate, wherein the light-emitting diode packaging structure is connected to the driving back plate.

In one embodiment of the present invention, the manufacturing method of the light-emitting diode package structure further includes: forming a laser blocking layer on the release layer after forming the release layer and before forming the first insulating layer; and, after separating the release layer and the first insulating layer, removing the laser blocking layer to expose the first portion of the first conductive pattern filled in the through hole of the first insulating layer.

In one embodiment of the present invention, the projection area of the first conductive pattern is larger than the projection area of the through hole of the first insulating layer, and the projection area of the through hole of the first insulating layer falls within the projection area of the first conductive pattern.

In one embodiment of the present invention, the first portion and the second portion of the first conductive pattern define a depression of the first conductive pattern, the second insulating layer has a through hole overlapping the depression, and the second conductive pattern is electrically connected to the first conductive pattern through the through hole of the second insulating layer.

Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and description to represent the same or similar parts.

It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it may be directly on or connected to another element, or an intermediate element may also exist. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intermediate elements. As used herein, "connected" may refer to physical and/or electrical connections. Furthermore, "electrically connected" or "coupled" may mean that there are other elements between two elements.

As used herein, "about," "approximately," or "substantially" includes the stated value and the average value within an acceptable deviation range of a particular value determined by a person of ordinary skill in the art, taking into account the measurement in question and the particular amount of error associated with the measurement (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, as used herein, "about," "approximately," or "substantially" can select a more acceptable deviation range or standard deviation depending on the optical property, etching property, or other property, and can apply to all properties without using one standard deviation.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by ordinary technicians in the field to which the present invention belongs. It will be further understood that those terms as defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology and the present invention, and will not be interpreted as an idealized or overly formal meaning unless expressly defined as such in this document.

1A to 1M are cross-sectional schematic diagrams of a manufacturing process of a light-emitting panel according to an embodiment of the present invention.

Referring to FIG. 1A , first, a release layer 120 is formed on a substrate 110. In this embodiment, the substrate 110 is light-transmissive and can be penetrated by laser; the release layer 120 can be released by laser. For example, in this embodiment, the material of the substrate 110 can be glass, quartz, organic polymer, or other applicable materials, but the present invention is not limited thereto.

1B , in this embodiment, a laser blocking layer 130 may be selectively formed on the release layer 120. The laser blocking layer 130 may block the laser to prevent the laser from damaging components formed on the laser blocking layer 130 in subsequent processes. For example, in this embodiment, the material of the laser blocking layer 130 may be metal, but the present invention is not limited thereto.

Referring to FIG. 1C , a first insulating layer 140 is then formed on the release layer 120, wherein the first insulating layer 140 has a through hole 142. Specifically, in this embodiment, the first insulating layer 140 may be directly formed on the laser blocking layer 130. However, the present invention is not limited thereto, and in another embodiment, the laser blocking layer 130 may be omitted, and the first insulating layer 140 may be directly formed on the release layer 120. The material of the first insulating layer 140 may be an organic material, an inorganic material, or a combination thereof. For example, in this embodiment, the material of the first insulating layer 140 may be polyimide (PI), but the present invention is not limited thereto.

1D , then, a first conductive pattern 150 is formed on the first insulating layer 140, wherein a first portion 151 of the first conductive pattern 150 fills the through hole 142 of the first insulating layer 140, and a second portion 152 of the first conductive pattern 150 is disposed on the first insulating layer 140 and connected to the first portion 151. In this embodiment, the projection area of the first conductive pattern 150 is larger than the projection area of the through hole 142 of the first insulating layer 140, and the projection area of the through hole 142 of the first insulating layer 140 falls within the projection area of the first conductive pattern 150. For example, in this embodiment, the material of the first conductive pattern 150 may be metal, but the present invention is not limited thereto.

In the present embodiment, the film thickness T150 of the first conductive pattern 150 may be selectively thinner, and the first portion 151 and the second portion 152 of the first conductive pattern 150 may selectively define a recess 150a of the first conductive pattern 150, wherein the recess 150a of the first conductive pattern 150 may overlap the through hole 142 of the first insulating layer 140. However, the present invention is not limited thereto, and in other embodiments, the film thickness T150 of the first conductive pattern 150 may be thicker, and the first conductive pattern 150 may not have the recess 150a.

Referring to FIG. 1E , a second insulating layer 160 is then formed on the first insulating layer 140 to cover the first conductive pattern 150. The second insulating layer 160 is disposed on the first insulating layer 140 and covers the first conductive pattern 150. In particular, the second portion 152 of the first conductive pattern 150 is sandwiched between the first insulating layer 140 and the second insulating layer 160. The film thickness T160 of the second insulating layer 160 is greater than the film thickness T150 of the first conductive pattern 150, and the second insulating layer 160 and the first insulating layer 140 can sandwich the first conductive pattern 150 together and well. The material of the second insulating layer 160 may be an organic material, an inorganic material or a combination thereof. For example, in this embodiment, the material of the second insulating layer 160 may be polyimide (PI), but the present invention is not limited thereto.

Referring to FIG. 1F , a second conductive pattern 170 is then formed on the second insulating layer 160. The second conductive pattern 170 is disposed on the second insulating layer 160, and the second conductive pattern 170 is electrically connected to the first conductive pattern 150. Specifically, in this embodiment, the second insulating layer 160 has a through hole 162, and the second conductive pattern 170 is electrically connected to the first conductive pattern 150 through the through hole 162 of the second insulating layer 160. In this embodiment, the through hole 162 of the second insulating layer 160 may overlap the recess 150a of the first conductive pattern 150, but the present invention is not limited thereto. In this embodiment, the material of the second conductive pattern 170 is metal, for example, but the present invention is not limited thereto.

Please refer to FIG. 1G , then, in this embodiment, a light absorbing layer 180 may be selectively formed on the second insulating layer 160 to cover at least a portion of the second conductive pattern 170. Specifically, in this embodiment. The second conductive pattern 170 may include a pad portion 171 and a conductive portion 172 outside the pad portion 171, wherein the light absorbing layer 180 covers the conductive portion 172 of the second conductive pattern 170 and exposes the pad portion 171 of the second conductive pattern 170. For example, in this embodiment, the material of the light absorbing layer 180 may be black resin, but the present invention is not limited thereto.

Referring to FIG. 1H , the light emitting diode element 190 is then bonded to the second conductive pattern 170. Specifically, in this embodiment, the light emitting diode element 190 is bonded to the pad portion 171 of the second conductive pattern 170 exposed by the light absorbing layer 180. For example, in this embodiment, the light emitting diode element 190 is, for example, a micro light emitting diode (μLED), but the present invention is not limited thereto.

1I , then, in this embodiment, a transparent encapsulation layer 192 is formed on the second insulating layer 160 to cover and protect the light-emitting diode element 190 and the second conductive pattern 170 .

1I, 1J and 1K, the release layer 120 and the first insulating layer 140 are then separated to expose the first portion 151 of the first conductive pattern 150 that fills the through hole 142 of the first insulating layer 140. Specifically, in this embodiment, a laser de-bonding process may be used to separate the release layer 120 from the substrate 110; thereafter, the release layer 120 and the laser blocking layer 130 are removed to expose the first portion 151 of the first conductive pattern 150 that fills the through hole 142 of the first insulating layer 140. For example, in this embodiment, the release layer 120 and the laser stop layer 130 may be removed by an etching process, but the present invention is not limited thereto.

Referring to FIG. 1L , solder 194 is then formed on the first portion 151 of the first conductive pattern 150. The solder 194 is disposed on the first portion 151 of the first conductive pattern 150, and the solder 194 and the second conductive pattern 170 are located on opposite sides of the first conductive pattern 150. Thus, the LED package structure 100 of this embodiment is completed. For example, in this embodiment, the solder 194 may be formed on the first portion 151 of the first conductive pattern 150 by chemical plating; the material of the solder 194 may include nickel and gold, for example; but the present invention is not limited thereto.

It is worth mentioning that, since the second portion 152 of the first conductive pattern 150 is sandwiched between the first insulating layer 140 and the second insulating layer 160, even if the thickness difference between the solder 194 and the first conductive pattern 150 is large and the internal stress of the film of the first conductive pattern 150 is large, the first conductive pattern 150 is still not easy to peel off from the first insulating layer 140 and the second insulating layer 160. Thereby, the manufacturing yield of the LED package structure 100 can be improved.

Fig. 2 is a top view of a LED package structure according to an embodiment of the present invention. Fig. 2 omits the solder 194 of the LED package structure 100.

1L and 2 , in this embodiment, the same LED package structure 100 may include a plurality of LED elements 190, and the plurality of LED elements 190 may be covered by the same transparent packaging layer 192. For example, in this embodiment, the plurality of LED elements 190 of the same LED package structure 100 may be a plurality of LED elements 190 for emitting red light, green light, and blue light, respectively, but the present invention is not limited thereto.

1L and 1M , the LED package structure 100 is then transferred to the driving back plate 200 and the LED package structure 100 is bonded to the driving back plate 200 . Here, the light emitting panel 10 of this embodiment is completed.

In this embodiment, the driving backplane 200 may include a plurality of sub-pixel driving circuits (not shown), and each of the light-emitting diode elements 190 is electrically connected to a corresponding sub-pixel driving circuit (not shown). For example, in the present embodiment, each sub-pixel driving circuit may include a data line (not shown), a scan line (not shown), a power line (not shown), a common line (not shown), a first transistor (not shown), a second transistor (not shown) and a capacitor (not shown), wherein a first end of the first transistor is electrically connected to the data line, a control end of the first transistor is electrically connected to the scan line, a second end of the first transistor is electrically connected to a control end of the second transistor, a first end of the second transistor is electrically connected to the power line, the capacitor is electrically connected to the second end of the first transistor and the first end of the second transistor, and a first electrode (not shown) and a second electrode (not shown) of the light-emitting diode element 190 may be electrically connected to the second end of the second transistor and the common line, respectively, but the present invention is not limited thereto.

10: Light-emitting panel 100: LED package structure 110: Substrate 120: Release layer 130: Laser blocking layer 140: First insulating layer 142, 162: Via 150: First conductive pattern 150a: Depression 151: First part 152: Second part 160: Second insulating layer 170: Second conductive pattern 171: Pad part 172: Conductive part 180: Light-absorbing layer 190: LED element 192: Transparent package layer 194: Solder 200: Driver backplane T150, T160: Film thickness

Figures 1A to 1M are cross-sectional schematic diagrams of the manufacturing process of the light-emitting panel of an embodiment of the present invention. Figure 2 is a top view schematic diagram of the light-emitting diode packaging structure of an embodiment of the present invention.

100: LED packaging structure

140: First insulation layer

142, 162: Through hole

150: First conductive pattern

150a: Depression

151: Part 1

152: Part 2

160: Second insulation layer

170: Second conductive pattern

171:Pad part

172: Conductive part

180: light-absorbing layer

190: LED element

192: Transparent packaging layer

194: Solder

T150, T160: film thickness

Claims (8)

A method for manufacturing a light-emitting diode package structure includes: forming a release layer on a substrate; forming a first insulating layer on the release layer, wherein the first insulating layer has a through hole; forming a first conductive pattern on the first insulating layer, wherein a first portion of the first conductive pattern fills the through hole of the first insulating layer, and a second portion of the first conductive pattern is disposed on the first insulating layer and connected to the first portion; forming a second insulating layer on the first insulating layer to cover the first conductive pattern; The invention relates to a method for forming a conductive layer of a semiconductor device and a conductive layer, wherein the second portion of the first conductive pattern is sandwiched between the first insulating layer and the second insulating layer; forming a second conductive pattern on the second insulating layer, wherein the second conductive pattern is electrically connected to the first conductive pattern; bonding a light-emitting diode element to the second conductive pattern; separating the release layer from the first insulating layer and exposing the first portion of the first conductive pattern filled in the through hole of the first insulating layer; and forming a solder on the first portion of the first conductive pattern. The manufacturing method of the LED package structure as described in claim 1 further includes: forming a laser blocking layer on the release layer after forming the release layer and before forming the first insulating layer; and after separating the release layer and the first insulating layer, removing the laser blocking layer to expose the first portion of the first conductive pattern filled in the through hole of the first insulating layer. A method for manufacturing a light-emitting diode package structure as described in claim 1, wherein the projection area of the first conductive pattern is larger than the projection area of the through hole of the first insulating layer, and the projection area of the through hole of the first insulating layer falls within the projection area of the first conductive pattern. The manufacturing method of the light-emitting diode package structure as described in claim 1, wherein the first part and the second part of the first conductive pattern define a recess of the first conductive pattern, the second insulating layer has a through hole overlapping the recess, and the second conductive pattern is electrically connected to the first conductive pattern through the through hole of the second insulating layer. A light-emitting diode package structure includes: a first insulating layer having a through hole; a first conductive pattern, wherein the first conductive pattern has a first part and a second part, the first part fills the through hole of the first insulating layer, and the second part is arranged on the first insulating layer and connected to the first part; a second insulating layer is arranged on the first insulating layer and covers the first conductive pattern, wherein the second part of the first conductive pattern is sandwiched between the first insulating layer and the second insulating layer; a second conductive pattern is arranged on the second insulating layer. An insulating layer is provided and electrically connected to the first conductive pattern; a light-emitting diode element is bonded to the second conductive pattern; and a solder is provided on the first portion of the first conductive pattern, wherein the solder and the second conductive pattern are respectively located on opposite sides of the first conductive pattern, the first portion and the second portion of the first conductive pattern define a depression of the first conductive pattern, the second insulating layer has a through hole overlapping the depression, and the second conductive pattern is electrically connected to the first conductive pattern through the through hole of the second insulating layer. The light-emitting diode package structure as described in claim 5, wherein the projection area of the first conductive pattern is larger than the projection area of the through hole of the first insulating layer, and the projection area of the through hole of the first insulating layer falls within the projection area of the first conductive pattern. A light-emitting panel comprises: a light-emitting diode packaging structure, comprising: a first insulating layer having a through hole; a first conductive pattern, wherein the first conductive pattern has a first part and a second part, the first part fills the through hole of the first insulating layer, and the second part is arranged on the first insulating layer and connected to the first part; a second insulating layer, arranged on the first insulating layer and covering the first conductive pattern, wherein the second part of the first conductive pattern is sandwiched between the first insulating layer and the second insulating layer; a second conductive pattern, arranged on the second insulating layer and electrically connected to the first conductive pattern. to the first conductive pattern; a light-emitting diode element, joined to the second conductive pattern; and a solder, disposed on the first portion of the first conductive pattern, wherein the solder and the second conductive pattern are respectively located on opposite sides of the first conductive pattern; and a driving backplane, wherein the light-emitting diode package structure is joined to the driving backplane, the first portion and the second portion of the first conductive pattern define a recess of the first conductive pattern, the second insulating layer has a through hole overlapping the recess, and the second conductive pattern is electrically connected to the first conductive pattern through the through hole of the second insulating layer. The light-emitting panel as described in claim 7, wherein the projection area of the first conductive pattern is larger than the projection area of the through hole of the first insulating layer, and the projection area of the through hole of the first insulating layer falls within the projection area of the first conductive pattern.

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