TWM657713U - Euv microscope - Google Patents
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- 238000001900 extreme ultraviolet lithography Methods 0.000 description 3
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Abstract
Description
本申請涉及一種與用於生產電子晶片的極紫外光(EUV)光刻掩模一起使用的極紫外光顯微鏡。 This application relates to an extreme ultraviolet (EUV) microscope for use with an extreme ultraviolet (EUV) lithography mask used in the production of electronic chips.
已有人提出了現有的EUV掩模成像裝置來評估EUV掩模的品質。例如,美國專利6,738,135描述了一種用於檢查光刻掩模的新穎系統,其有時被稱為波帶板(zone-plate)顯微鏡。 Existing EUV mask imaging devices have been proposed to evaluate the quality of EUV masks. For example, U.S. Patent 6,738,135 describes a novel system for inspecting photolithography masks, which is sometimes referred to as a zone-plate microscope.
可以認識到,波帶板顯微鏡是高彩色的,具有依賴於波長的焦距。如果不控制,該特性導致解析度差。由於彩色效應依賴於焦距,這些裝置的焦距越短,彩色效應變得越不重要。 It is recognized that zone plate microscopes are highly chromatic and have a wavelength-dependent focal length. This characteristic results in poor resolution if not controlled. Since color effects are dependent on focal length, the shorter the focal length of these devices, the less important color effects become.
在美國專利6,738,135中,為了處理Mo/Si多層光學器件所支援的全部典型頻寬,獲得了足夠短的焦距。儘管成功了,但存在某些缺點。即,該現有技術裝置的系統工作距離受到嚴重限制。此外,可以不使用用於濾除波帶板零階耀光(zero order flare)的波帶板中心光闌的校正實現,因為在短工作距離處,這種波帶板的中心光闌將佔據整個光孔徑的太大的一部分而不可行。 In US Patent 6,738,135, a sufficiently short focal length was achieved in order to handle the full typical bandwidth supported by Mo/Si multilayer optics. Although successful, certain drawbacks exist. Namely, the system operating distance of this prior art device is severely limited. Furthermore, the correction of the zone plate center aperture for filtering the zero order flare of the zone plate can be achieved without using it, because at short working distances, the center aperture of such a zone plate would occupy too large a portion of the total optical aperture to be feasible.
用於以有效方式分析EUV掩模的EUV顯微鏡設備將構成電子領域中的顯著進步。 EUV microscope equipment for analyzing EUV masks in an efficient manner would constitute a significant advance in the field of electronics.
根據本申請,通過使用單色儀模組解決了上述問題,該單色儀模組進一步使所產生的極紫外光波束的頻寬變窄,從而允許更長的工作距離。 According to the present application, the above-mentioned problem is solved by using a monochromator module, which further narrows the bandwidth of the generated extreme ultraviolet light beam, thereby allowing a longer working distance.
極紫外光(EUV)掩模成像工具設備包括作為其元件之一的極紫外光波束源或極紫外光(EUV)發射源。這種發散可以由鐳射產生的等離子體、放電產生的等離子體等產生。極紫外光波束被傳送到產生第一聚焦的極紫外光波束的可選收集器。可選的收集器由具有串聯光焦度的兩個反射鏡形成。例如,收集器可包括與橢圓或非球面反射鏡結合的平面反射鏡。此外,收集器可以採用單個反射鏡的形式,例如球面、橢圓或非球面反射鏡。離開收集器的波束用作本申請設備的後續元件的中間焦點。 The EUV mask imaging tool apparatus includes an EUV beam source or EUV emitting source as one of its elements. Such divergence may be produced by laser-generated plasma, discharge-generated plasma, etc. The EUV beam is transmitted to an optional collector that produces a first focused EUV beam. The optional collector is formed by two mirrors with tandem optical power. For example, the collector may include a planar mirror combined with an elliptical or aspherical mirror. In addition, the collector may take the form of a single mirror, such as a spherical, elliptical or aspherical mirror. The beam leaving the collector is used as an intermediate focus of subsequent elements of the apparatus of the present application.
來自可選的收集器的第一中間聚焦的極紫外光(EUV)傳到具有入口和出口狹縫的單色儀模組。這種極紫外光波束被直接或通過由可選的收集器產生的中間焦點轉發到單色儀模組。如果中間焦點尺寸或實際源尺寸本身小於所需的入口狹縫尺寸,則可以排除單色儀模組的入口狹縫。在某些情況下,單色儀模組本身可以包括掠射和/或近似垂直的光學器件,並且理想地應該包括散射元件。實質上,當在沒有單獨的收集器的情況下使用時,單色儀模組作為聚光器操作,並且不形成來自極紫外光(EUV)光源的極紫外光波束的中間焦點。然後使用單色儀模組將光純化至λ/△λ為350或更好的水準。因此,第二聚焦的極紫外光波束從單色儀模組通過。 A first intermediate focused extreme ultraviolet (EUV) light from an optional collector is passed to a monochromator module having an entrance and exit slit. This EUV light beam is forwarded to the monochromator module directly or through an intermediate focus produced by the optional collector. The entrance slit of the monochromator module can be eliminated if the intermediate focus size or the actual source size itself is smaller than the required entrance slit size. In some cases, the monochromator module itself may include grazing and/or near-vertical optics and ideally should include scattering elements. In essence, when used without a separate collector, the monochromator module operates as a concentrator and does not form an intermediate focus of the EUV light beam from the EUV light source. The light is then purified using a monochromator module to a λ/Δλ level of 350 or better. Thus, a second focused EUV light beam passes through the monochromator module.
來自單色儀模組的第二聚焦的純化極紫外光波束被發送到照明模組或照明器。照明模組集中離開單色儀模組的極紫外光波束,並將該極紫外 光波束引導到待分析的掩模的表面。實質上,照明模組控制照明掩模的光的平均和角度範圍。在某些情況下,單色儀模組還用作照明器,從而消除了對單獨照明模組的需要。 The second focused, purified EUV light beam from the monochromator module is sent to an illumination module, or illuminator. The illumination module focuses the EUV light beam leaving the monochromator module and directs it toward the surface of the mask to be analyzed. Essentially, the illumination module controls the average and angular range of light that illuminates the mask. In some cases, the monochromator module also serves as an illuminator, eliminating the need for a separate illumination module.
從掩模反射的極紫外光(EUV)穿過波帶板。波帶板可以可選地包括中心遮攔,以便使用一階光而沒有零階光的重疊。穿過波帶板的光作為圖像被發送到諸如電荷耦合裝置(CCD)的檢測器,該檢測器通常包括螢幕,在該螢幕上使用者可以觀察到掩模的極紫外光(EUV)反射特性。圖像可被記錄以供使用者或自動化電腦軟體隨後查看和/或分析。 The EUV light reflected from the mask passes through a zone plate. The zone plate may optionally include a center shield so that first order light is used without overlap of zero order light. The light passing through the zone plate is sent as an image to a detector such as a charge coupled device (CCD), which typically includes a screen on which the user can observe the EUV reflective properties of the mask. The image can be recorded for subsequent viewing and/or analysis by the user or automated computer software.
因此,提供了一種新穎的極紫外光(EUV)掩模成像工具,其特徵在於使用非同步極紫外光光源,非同步極紫外光光源將部分相干或非相干極紫外光(EUV)傳送到集成單色儀模組和具有中心光闌的波帶板,以減輕零階耀光。 Therefore, a novel extreme ultraviolet (EUV) mask imaging tool is provided, which is characterized by using an asynchronous extreme ultraviolet light source that delivers partially coherent or incoherent extreme ultraviolet (EUV) light to an integrated monochromator module and a zone plate with a central aperture to mitigate zero-order flare.
因此,本申請的目的是提供一種新型極紫外光(EUV)掩模成像工具,其有效且經濟地能夠顯現和評估極紫外光(EUV)光刻掩模。 Therefore, the object of this application is to provide a novel extreme ultraviolet (EUV) mask imaging tool that is capable of visualizing and evaluating extreme ultraviolet (EUV) lithography masks efficiently and economically.
本申請的另一個目的是提供一種新型極紫外光(EUV)掩模成像工具,其允許以比現有技術的極紫外光(EUV)成像/檢查工具更低的成本對極紫外光(EUV)掩模進行視覺化和評估。 Another object of the present application is to provide a novel EUV mask imaging tool that allows visualization and evaluation of EUV masks at a lower cost than prior art EUV imaging/inspection tools.
本申請的另一個目的是提供一種新型極紫外光(EUV)掩模成像工具,其包括新穎的光學設計,該光學設計具有較短的軌道長度和較小的、更容易保持現有技術的可比工具中缺少的成像光學器件。 Another object of the present application is to provide a new extreme ultraviolet (EUV) mask imaging tool that includes a novel optical design with a shorter track length and smaller, more easily maintained imaging optics that are lacking in comparable prior art tools.
本申請的另一個目的是提供一種新型極紫外光(EUV)掩模成像工具,其消除了在現有波帶板顯微鏡中發現的彩色效應。 Another object of this application is to provide a new extreme ultraviolet (EUV) mask imaging tool that eliminates the color effects found in existing zone plate microscopes.
本申請的另一個目的是提供一種新型極紫外光(EUV)掩模成像工具,其採用具有中心光闌或遮攔的波帶板以濾除波帶板零階耀光。 Another object of this application is to provide a novel extreme ultraviolet (EUV) mask imaging tool that uses a zone plate with a central aperture or shield to filter the zone plate zero-order flare.
本申請的另一個目的是提供一種用於視覺化和評估極紫外光(EUV)光刻掩模的新型極紫外光(EUV)掩模成像工具,其能夠以高精度和可重複性測量這種掩模。 Another object of this application is to provide a novel extreme ultraviolet (EUV) mask imaging tool for visualizing and evaluating extreme ultraviolet (EUV) lithography masks that is capable of measuring such masks with high accuracy and repeatability.
本申請的另一目的是提供一種新型極紫外光(EUV)掩模成像工具,其與傳統的掩模坯件轉移系統相容,並可在通常用於製造半導體晶片的標準潔淨室中操作。 Another object of this application is to provide a novel extreme ultraviolet (EUV) mask imaging tool that is compatible with conventional mask blank transfer systems and can be operated in standard clean rooms typically used to manufacture semiconductor wafers.
隨著說明書的繼續,本申請具有其它目的和優點,尤其是關於其特定特性和特徵,將變得顯而易見。 As the description proceeds, the present application has other objects and advantages, especially as to its specific properties and features, which will become apparent.
參考以下附圖,其進一步描述要求專利保護的申請。 See the following accompanying drawings, which further describe the application for which patent protection is claimed.
10:工具設備 10: Tools and equipment
10A,10B,10C,10D:裝置 10A, 10B, 10C, 10D: Device
12:極紫外光光源 12: Extreme ultraviolet light source
14,22,32:極紫外光波束 14,22,32: Extreme ultraviolet light beam
16:收集器 16: Collector
18,36:平面反射鏡 18,36: Plane reflector
20,38:反射鏡 20,38: Reflector
23:聚光器 23: Concentrator
24:圓柱形光柵 24: Cylindrical grating
26:入口狹縫 26: Entrance slit
28:出口狹縫 28: Export gap
30:單色儀模組 30: Monochrome module
34:照明模組 34: Lighting module
40:照明波束 40: Lighting beam
42:波帶板 42: Zone plate
43:中心遮攔 43: Center shield
44:表面 44: Surface
45:零階光 45: Zero-order light
46:掩模 46:Mask
47:一階光 47: First-level light
48:波束 48: Beam
49:陰影 49: Shadow
50:檢測器 50: Detector
圖1是描繪本申請的設備的實施方案的元件的示意圖。 FIG1 is a schematic diagram depicting elements of an embodiment of the apparatus of the present application.
圖2是示出本申請的設備的照明模組的實施方案的等距視圖。 FIG2 is an isometric view showing an embodiment of a lighting module of the device of the present application.
圖3是示出在本申請的設備中波帶板相對於掩模的位置的示意圖。 FIG3 is a schematic diagram showing the position of the zone plate relative to the mask in the apparatus of the present application.
圖4是示出本申請的設備的波帶板的操作的示意圖。 FIG4 is a schematic diagram showing the operation of the zone plate of the device of the present application.
圖5是描繪本申請的設備的框圖。 FIG5 is a block diagram depicting the device of the present application.
圖6是示出本申請的裝置的另一實施方案的框圖。 Figure 6 is a block diagram showing another embodiment of the device of the present application.
圖7示出了本申請的設備的另一實施方案。 Figure 7 shows another embodiment of the device of the present application.
圖8示出了本申請的設備的另一實施方案。 Figure 8 shows another embodiment of the device of the present application.
圖9示出了本申請的設備的另一實施方案。 Figure 9 shows another embodiment of the device of the present application.
為了更好地理解本申請,參考以下優選實施方案的詳細描述,其應當參考上述附圖。 For a better understanding of the present application, reference is made to the following detailed description of the preferred embodiment, which should be referenced to the above-mentioned accompanying drawings.
本申請的各個方面將從下面的詳細說明中演變而來,該詳細說明應該參考前面描述的附圖。 Various aspects of the present application will derive from the following detailed description, which should be read in conjunction with the accompanying drawings described above.
參照圖1,附圖標記用於將工具設備10描繪為一個整體。工具設備10包括作為其元件之一的極紫外光光源12,極紫外光光源12可以是鐳射產生的等離子體源。然而,極紫外光光源12也可以來自放電產生的等離子體源等。下表表示工具設備10的光學規格:
參見圖1,來自極紫外光光源12的極紫外光波束14被發送到收集器16,收集器16可以採取具有串聯光焦度的一個或兩個或更多個反射鏡的形式。收集器16產生第一聚焦的極紫外光波束22。例如,圖5的裝置10A的收集器16可以包括與圖5的非球面或橢圓反射鏡20串聯的平面反射鏡18。然而,在圖 6的實施方案裝置10B中,收集器16也可以僅包括單個非球面或橢圓反射鏡20。 Referring to FIG. 1 , an EUV light beam 14 from an EUV light source 12 is sent to a collector 16, which may be in the form of one or two or more mirrors with tandem optical power. The collector 16 generates a first focused EUV light beam 22. For example, the collector 16 of the device 10A of FIG. 5 may include a plane mirror 18 in series with the aspherical or elliptical mirror 20 of FIG. 5 . However, in the embodiment device 10B of FIG. 6 , the collector 16 may also include only a single aspherical or elliptical mirror 20.
再次觀察圖1,從收集器16得到的第一聚焦的極紫外光波束22被傳送到單色儀模組30。單色儀模組30包括在任一側上的入口狹縫26和出口狹縫28。同樣,單色儀模組30因此執行聚焦功能,該功能用於將極紫外光(EUV)從入口狹縫26重新成像到出口狹縫28。實質上,單色儀模組30用於將所接收的光淨化到350或更好的λ/△λ的水準。單色儀模組30可以採用本領域中已知的任何合適的裝置的形式,並且當與收集器16一起使用時,可以從加利福尼亞馬丁內斯的極紫外光(EUV)科技公司以零件號B151667獲得。例如,單色儀模組30可以使具有聚光器23和使UV光離開出口狹縫28的圓柱形光柵24的單色儀模組30外部化。第二聚焦的極紫外光波束32從出口狹縫28通過。 1 , the first focused EUV light beam 22 from the collector 16 is transmitted to a monochromator module 30. The monochromator module 30 includes an entrance slit 26 and an exit slit 28 on either side. As such, the monochromator module 30 thus performs a focusing function for re-imaging the EUV light from the entrance slit 26 to the exit slit 28. In essence, the monochromator module 30 is used to clean up the received light to a level of λ/Δλ of 350 or better. The monochromator module 30 may take the form of any suitable device known in the art and, when used with the collector 16, may be obtained from Extreme Ultraviolet (EUV) Technologies, Inc. of Martinez, California as part number B151667. For example, the monochromator module 30 may externalize the monochromator module 30 having the concentrator 23 and the cylindrical grating 24 that causes the UV light to exit the exit slit 28. The second focused EUV light beam 32 passes through the exit slit 28.
離開出口狹縫28的第二極紫外光波束32行進到圖1的照明模組34(照明器)。在實施方案裝置10A的一種形式中,照明模組34可以包括圖7中的平面反射鏡36和橢圓或非球面反射鏡38的組合。在圖2和圖8的實施方案裝置10C中,照明模組34也可以由單個橢圓或非球面反射鏡38形成。照明模組34既用於聚集離開單色儀模組30的光,又用於限定照明的角度範圍。照明模組34在掩模46上產生具有約10μm寬度的照明波束40。 The second extreme ultraviolet light beam 32 leaving the exit slit 28 travels to the illumination module 34 (illuminator) of FIG. 1 . In one form of the embodiment device 10A, the illumination module 34 may include a combination of the plane reflector 36 and the elliptical or aspherical reflector 38 in FIG. 7 . In the embodiment device 10C of FIGS. 2 and 8 , the illumination module 34 may also be formed by a single elliptical or aspherical reflector 38. The illumination module 34 is used both to focus the light leaving the monochromator module 30 and to limit the angular range of illumination. The illumination module 34 produces an illumination beam 40 having a width of about 10 μm on the mask 46 .
單色儀模組30、照明模組34和收集器16的功能可以組合成單個實體,例如圖9的實施方案裝置10D中的單色儀模組30。在該實施例中,來自單色儀模組30的極紫外光波束32被直接傳送到掩模46,使單色儀模組30可在不使用收集器16或照明模組34的情況下產生圖像。 The functions of the monochromator module 30, the illumination module 34, and the collector 16 can be combined into a single entity, such as the monochromator module 30 in the embodiment 10D of FIG. 9. In this embodiment, the extreme ultraviolet light beam 32 from the monochromator module 30 is directly transmitted to the mask 46, so that the monochromator module 30 can produce an image without using the collector 16 or the illumination module 34.
再次參見圖1、圖3和圖4,離開照明模組34的再照明波束40穿過波帶板42,其中具有前述10μm寬度照明波束40承載在掩模46的表面44上,也 參見圖7至圖9。圖3描述了波帶板42相對於掩模46和掩模46表面44的位置。波帶板42在圖4中以其功能透鏡形狀示出。從掩模46反射並穿過波帶板42的波束48被發送到檢測器50,檢測器50可為成像感測器,成像感測器可以是在真空中冷卻的電荷耦合裝置(CCD)照相機,這將在下文中更詳細地討論。再次參考圖4,波帶板42優選地包括中心遮攔43以防止波帶板42的零階光45和衍射的一階光47的重疊。中心遮攔43在波帶板42和電荷耦合裝置(CCD)之間產生陰影49。應當注意,波帶板42的衍射一階光47是從掩模46反射的波束48的有用目標成像區域。 Referring again to FIGS. 1 , 3 and 4 , the re-illumination beam 40 leaving the illumination module 34 passes through a zone plate 42, wherein the illumination beam 40 having the aforementioned 10 μm width is carried on the surface 44 of the mask 46, see also FIGS. 7 to 9 . FIG. 3 depicts the position of the zone plate 42 relative to the mask 46 and the mask 46 surface 44. The zone plate 42 is shown in its functional lens shape in FIG. 4 . The beam 48 reflected from the mask 46 and passing through the zone plate 42 is sent to the detector 50, which may be an imaging sensor, which may be a charge coupled device (CCD) camera cooled in a vacuum, as will be discussed in more detail below. Referring again to FIG. 4 , the zone plate 42 preferably includes a center shutter 43 to prevent overlap of the zero-order light 45 and the diffracted first-order light 47 of the zone plate 42. The center shutter 43 creates a shadow 49 between the zone plate 42 and the charge coupled device (CCD). It should be noted that the diffracted first-order light 47 of the zone plate 42 is a useful target imaging area of the beam 48 reflected from the mask 46.
因此,當檢測器50為電荷耦合裝置(CCD)時,電荷耦合裝置(CCD)用作揭示掩模46的表面44上的任何缺陷的檢測器。這種缺陷可以表現為與電荷耦合裝置(CCD)相關的螢幕上的任何異常。電荷耦合裝置(CCD)可以採用由德國柏林的Great Eyes公司製造的真空內冷卻CCD的形式。這種電荷耦合裝置(CCD)具有13μm×13μm的圖元間距範圍。 Thus, when the detector 50 is a charge coupled device (CCD), the charge coupled device (CCD) is used as a detector to reveal any defects on the surface 44 of the mask 46. Such defects may appear as any anomalies on the screen associated with the charge coupled device (CCD). The charge coupled device (CCD) may take the form of a vacuum internally cooled CCD manufactured by Great Eyes of Berlin, Germany. Such a charge coupled device (CCD) has a pixel pitch range of 13μm×13μm.
儘管在前述的本申請的實施方案中,為了進行本申請的完整公開,已經相當詳細地闡述了本申請,但是對於本領域的技術人員顯而易見的是,在不脫離本申請的精神和原理的情況下,可以對這些細節進行許多改變。 Although the present application has been described in considerable detail in the aforementioned implementation scheme of the present application for the purpose of complete disclosure of the present application, it is obvious to those skilled in the art that many changes may be made to these details without departing from the spirit and principles of the present application.
10:工具設備 10: Tools and equipment
12:極紫外光光源 12: Extreme ultraviolet light source
14,22,32:極紫外光波束 14,22,32: Extreme ultraviolet light beam
16:收集器 16: Collector
23:聚光器 23: Concentrator
24:圓柱形光柵 24: Cylindrical grating
26:入口狹縫 26: Entrance slit
28:出口狹縫 28: Export gap
30:單色儀模組 30: Monochrome module
34:照明模組 34: Lighting module
40:照明波束 40: Lighting beam
42:波帶板 42: Zone plate
44:表面 44: Surface
46:掩模 46:Mask
48:波束 48: Beam
50:檢測器 50: Detector
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